Abstract: A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.

Abstract: A deformable focal plane array (DFPA) for imaging systems is disclosed. In one embodiment, the DFPA includes a detection circuitry on one side. For example, the thickness of the DFPA is in a range of about 5 to 40 microns. In one exemplary embodiment, the DFPA when warped to a desired shape provides a substantially wider field of view (FOV) than a flat focal plane array (FPA).

Abstract: A method and system for assembling a quasicrystalline heterostructure. A plurality of particles is provided with desirable predetermined character. The particles are suspended in a medium, and holographic optical traps are used to position the particles in a way to achieve an arrangement which provides a desired property.

Abstract: A structuring device is for structuring a plate-like element.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: A photoelectric conversion substrate includes: plural pixels, each provided with a sensor portion and a switching element that are formed on the substrate, the sensor portion including a photoelectric conversion element that generates charge according to illuminated light, and the switching element reading the charge from the sensor portion, a flattening layer that flattens the surface of the substrate having the switching elements and the sensor portions formed thereon, a conducting member formed over the whole face of the flattening layer; and a connection section that connects the conducting member to ground.

Abstract: A radiation detector is provided including plural pixels, a planarizing layer, a conductive layer and a light emitting layer. Each of the pixels is provided with a sensor portion including a switching element formed on a substrate and a photoelectric conversion element that is formed on the substrate and generates charge according to illuminated light. The planarizing layer is formed on the plural pixels. The conductive layer is formed on the planarizing layer in a mesh formation. The light emitting layer is formed with a non-columnar member of grain-shaped crystals that emit light according to irradiated radiation laminated on the planarizing layer and the conductive layer and a columnar member of columnar crystals formed on the non-columnar member.

Abstract: A solid-state imaging device includes: a semiconductor substrate; and a plurality of pixels arrayed two-dimensionally in the semiconductor substrate, each of the pixels having a photoelectric conversion element that performs photoelectric conversion, the photoelectric conversion element having a first impurity region, formed in the semiconductor substrate, containing an impurity of a first conductivity type; a second impurity region formed in the semiconductor substrate so as to be in contact with the first impurity region, containing an impurity of a second conductivity type different from the first conductivity type; and a PN junction portion in which the first impurity region and the second impurity region are in contact with each other, formed in a protruding shape projecting toward a surface side of the semiconductor substrate.

Abstract: Disclosed is a solar cell including a passivation film formed on a light-receiving surface of a silicon substrate, and an antireflection film formed on the passivation film, wherein the passivation film has a refractive index higher than that of the antireflection film. The passivation film and the antireflection film can each be made of a silicon nitride film.

Abstract: Certain embodiments provide a method for manufacturing a solid state imaging device, the method including: forming a plurality of first semispherical lens bodies; forming a second transparent resin layer; and forming a second lens body. The plurality of first semispherical lens bodies are respectively formed on a plurality of photodiode layers formed on a principal surface of a semiconductor substrate. The second transparent resin layer is a resin layer having an etching rate higher than that of the first lens body, and is formed so that the semiconductor substrate including the plurality of first lens bodies is covered with the second transparent resin layer. The second lens bodies are formed on a surface except the top part of each of the first lens bodies by etching an entire surface of the second transparent resin layer until top parts of the first lens bodies are exposed.

Abstract: A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.

Abstract: An infrared (IR) radiation sensor device (27) includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) temperature-sensitive elements connected within a dielectric stack (3) of the chip, the first temperature-sensitive element (7) being more thermally insulated from a substrate (2) than the second temperature-sensitive element (8). Bonding pads (28A) on the chip (1) are coupled to the first and second temperature-sensitive elements. Bump conductors (28) are bonded to the bonding pads (28A), respectively, for physically and electrically connecting the radiation sensor chip (1) to corresponding mounting conductors (23A). A diffractive optical element (21,22,23,31,32 or 34) is integrated with a back surface (25) of the radiation sensor chip (1) to direct IR radiation toward the first temperature-sensitive element (7).

Abstract: Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and controllable technique of forming an electrical contact between a conducting layer and underlying substrate through the passivating dielectric layer, achieving both good surface passivation and electrical contact with low recombination losses, as required for high efficiency solar cells. The passivating dielectric layer is intentionally modified to allow direct contact, or tunnel barrier contact, with the substrate. Additional P-N junctions, and dopant gradients, are disclosed to further limit losses and increase efficiency.

Abstract: The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm.

Abstract: In one embodiment, a method of manufacturing a back side illuminated imaging device includes forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate, and bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device. The method further includes removing the semiconductor substrate from the holding substrate to transfer the semiconductor detection device and the peripheral circuit device onto the holding substrate. The method further includes forming an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device transferred onto the holding substrate, and annealing the amorphous semiconductor layer by using a microwave.

Abstract: The present technology relates to a solid-state imaging apparatus that can provide a compound-eye system solid-state imaging apparatus capable of capturing an image with high image quality regardless of use environments, a method of manufacturing a solid-state imaging apparatus, and an electronic apparatus. The solid-state imaging apparatus includes photoelectric conversion units (21) that are two-dimensionally arranged, on-chip lenses (27a) that are two-dimensionally arranged on an upper side of the photoelectric conversion units (21) in correspondence with the photoelectric conversion units (21), a micro-lens (10a) that is arranged so as to face each plurality of the on-chip lenses (27a), and a transparent material layer that is pinched between the on-chip lenses (27a) and the micro-lens (10a) and are configured by a first intermediate layer (29) and a second intermediate layer (31).

Abstract: The invention relates to a solar cell module which comprises a base having photovoltaically active zones and photovoltaically inactive zones, at least one diffractive element being arranged above at least one photovoltaically inactive zone of the base.

Abstract: Three dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling an waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.

Abstract: An image sensing device includes a light-shielding film having transit portions, a first film and a second film. The second film comprises a first layer having a different refractive index from the first film. The first layer lies within at least the transit portions, and forms interfaces with the first film. The distance between the interface and the corresponding photoelectric conversion portion is greater than the distance between the photoelectric conversion portion and the lower end of the corresponding transit portion.

Abstract: A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Abstract: According to one embodiment, a solid state imaging device includes a substrate, and a plurality of interference filters. The substrate includes a plurality of photoelectric conversion units. The plurality of interference filters is provided individually for the plurality of photoelectric conversion units. The plurality of interference filters includes a plurality of layers with different refractive indices stacked. The plurality of interference filters is configured to selectively transmit light in a prescribed wavelength range. A space is provided between adjacent ones of the interference filters.

Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.

Abstract: A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material.

Abstract: Image sensors with backside illumination image pixel arrays are provided. An image pixel array may have image pixels that are formed on a silicon substrate having front and back surfaces. The pixel array may have photodiodes formed in the front surface. A dielectric stack may be formed on the front surface. The dielectric stack may include interconnect structures and reflective light guides. A color filter array may be formed on the back surface of the substrate. Microlenses may be formed on the color filter array from the side facing the back surface. The pixel array may receive incoming light through the microlenses. The incoming light may enter the substrate through the back surface. The incoming light may penetrate the substrate and may be reflected by a light reflector in the reflective light guide back towards the photodiode. The image pixel array may exhibit improved quantum efficiency, sensitivity, and image contrast.

Abstract: A method of forming a focal plane array by: forming a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer, the sensing material being a thermistor material defining at least one pixel; providing supporting legs for the pixel within the sacrificial layer, covering them with a further sacrificial layer and forming first conductive portions in the surface of the sacrificial layer that are in contact with the supporting legs; forming a second wafer having read-out integrated circuit (ROIC), the second wafer being covered by another sacrificial layer, into which is formed second conductive portions in contact with the ROIC; bringing the sacrificial oxide layers of the first wafer and second wafer together such that the first and second conductive portions are aligned and bonding them together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; and removing the sacrificial l

Abstract: Pixel sensor cells with an opaque mask layer and methods of manufacturing are provided. The method includes forming a transparent layer over at least one active pixel and at least one dark pixel of a pixel sensor cell. The method further includes forming an opaque region in the transparent layer over the at least one dark pixel.

Abstract: Provided are a photovoltaic power generating apparatus and a method of manufacturing the apparatus. The photovoltaic power generating apparatus includes a substrate, a first backside electrode, a second backside electrode, and a separator. The first backside electrode is disposed on the substrate. The second backside electrode is disposed on the substrate and is spaced apart from the first backside electrode. The separator is disposed between the first backside electrode and the second backside electrode.

Abstract: A miniaturization active sensing module includes a substrate unit, an active sensing unit, and an optical unit. The substrate unit includes a substrate body, a plurality of first bottom conductive pads disposed on the bottom side of the substrate body, and a plurality of first conductive tracks embedded in the substrate body. The substrate body has at least one first groove formed therein. The active sensing unit includes at least one active sensing chip embedded in the first groove. The active sensing chip has at least one active sensing area and a plurality of electric conduction pads disposed on the top side thereof, and each first conductive track has two ends electrically contacted by one electric conduction pad and one first bottom conductive pad, respectively. The optical unit includes at least one optical element, disposed on the substrate body, for protecting the active sensing area.

Abstract: Provision of a solid-state imaging device of a planarized structure with reduced dark currents, allowing for high sensitivities over a wide wavelength band ranging from visible wavelengths to near-infrared wavelengths, and a fabrication method of the same.

Abstract: According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

Abstract: A solid-state imaging device includes: a substrate on which plural pixels having photoelectric converters are formed; an inorganic microlens made of an inorganic material and formed above the substrate, and an organic microlens made of an organic material and formed adjacent to the inorganic microlens so that a hem portion touches or overlaps a hem portion of the inorganic microlens.

Abstract: The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer is formed to have a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Abstract: An imaging optical module is designed to be placed in front of an optical image sensor of a semiconductor component. The module includes at least one element which has a refractive index that varies between its optical axis and its periphery, over at least an annular part and/or over its central part. The element may be a tablet in front of the semiconductor sensor or a lens in front of the semiconductor sensor. The direction of variation in refractive index may be oppositely oriented with respect to the table and lens.

Abstract: In a method for manufacturing an energy ray detection device including a first semiconductor region disposed below a first area on a surface of a semiconductor substrate, a second semiconductor region disposed below a second area on the surface and connected to a contact portion, and a third semiconductor region disposed below a third area on the surface between the first area and the second area, the first semiconductor region and the third semiconductor region are formed on the semiconductor substrate by performing ion implantation through a buffer film that covers the first area and the third area, a portion of the buffer film that covers the third area having a thickness smaller than a portion of the buffer film that covers the first area.

Abstract: Provided is a solid-state imaging device including a first photoelectric-conversion-portion selectively receiving a first wavelength light in incident light and performing photoelectric conversion; and a second photoelectric-conversion-portion selectively receiving a second wavelength light which is shorter than the first wavelength, wherein the first photoelectric-conversion-portion is laminated above the second photoelectric-conversion-portion in an imaging area of a substrate so that the second photoelectric-conversion-portion receives the light transmitting the first photoelectric-conversion-portion, wherein a transmitting portion is formed in the first photoelectric-conversion-portion so that the second wavelength light transmits the second photoelectric-conversion-portion more than other portions, and wherein the transmitting portion is formed to include a portion satisfying the following Equation within a width D defined in the direction of the imaging area, a refraction index n of a peripheral portion

Abstract: In a method for the production of a solar cell, a flat aluminium layer is applied to the back of a solar cell substrate. The aluminium is alloyed into the silicon substrate by the effect of the temperature and forms an aluminium BSF. The remaining aluminium that has not been alloyed into the silicon is subsequently removed. The aluminium BSF is transparent to light.

Abstract: A photovoltaic cell includes a photoelectric conversion element (PCE) in which an i-type silicon layer formed of a microcrystalline silicon film is provided between an n-type silicon layer and a p-type silicon layer, and the n-type silicon layer or p-type silicon layer positioned on a substrate side is configured of an amorphous silicon film. The PCE is formed wherein a mixture of a silane containing gas and hydrogen gas is introduced into a chamber and a seed layer formed of a microcrystalline silicon film is formed between the n-type silicon layer or p-type silicon layer positioned on the substrate side and the i-type silicon layer. The crystallization rate of a portion in contact with the n-type silicon layer or p-type silicon layer positioned on the substrate side is lower than that of the i-type silicon layer, and the rate increases continuously, or gradually in two or more stages, toward the i-type silicon layer side, continuing to the i-type silicon layer.

Abstract: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.

Abstract: Disclosed herein is a method for manufacturing a solid-state imaging element, the method including forming lenses that are each provided corresponding to a light receiving part of a respective one of a plurality of pixels arranged in an imaging area over a semiconductor substrate and collect light onto the light receiving parts; forming a light blocking layer by performing film deposition on the lenses by using a material having light blocking capability; and forming a light blocker composed of the material having light blocking capability at a boundary part between the lenses adjacent to each other by etching the light blocking layer in such a manner that the material having light blocking capability is left at the boundary part between the lenses.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a light shielding layer disposed on the second surface of the substrate and directly contacting with the conducting layer, wherein the light shielding layer has a light shielding rate of more than about 80% and has at least an opening exposing the conducting layer; and a conducting bump disposed in the opening of the light shielding layer to electrically contact with the conducting layer, wherein all together the light shielding layer and the conducting bump substantially and completely cover the second surface of the substrate.

Abstract: A radiation-sensitive detector includes a photosensor layer with one or more photosensor dixels and a composite scintillator layer with one or more scintillator dixels optically coupled to the photosensor layer. The composite scintillator layer is formed from a mixture including a scintillator material having a first refractive index corresponding to a first wavelength and a photo-resist used in micro-electromechanical systems production, having a second refractive index corresponding to the first wavelength. The first and second refractive indices are substantially matched, and the composite scintillator layer produces light having the first wavelength and that is indicative of x-radiation detected thereby.

Abstract: A thin film solar cell module including a plurality of cells in which a transparent electrode, a photoelectric conversion layer, and a rear surface electrode are stacked in this order includes a first photoelectric conversion layer separation trench and a rear surface electrode separation trench in which the photoelectric conversion layer is removed between a cell connection apertural area and a transparent electrode separation trench and between the cell connection apertural area and a rear surface electrode separation trench, and white reflection materials having an insulation property are formed at the inside of the trenches. The structure improves light use efficiency of thin film solar cells, and achieves thin film solar cell modules easily manufacturable.

Abstract: A micro-lens array with reduced or no empty space between individual micro-lenses and a method for forming same. The micro-lens array is formed by patterning a first set of micro-lens material in a checkerboard pattern on a substrate. The first set of micro-lens material is reflowed and cured into first micro-lenses impervious to subsequent reflows. Then, a second set of micro-lens material is patterned in spaces among the first micro-lenses, reflowed and cured into second micro-lenses. The reflows and cures can be conducted under different conditions, and the micro-lenses may be differently sized. The conditions of the reflows can be chosen to ensure that the focal lengths of micro-lenses are optimized for maximum sensor signal.

Abstract: A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.

Abstract: A method of forming a photoelectrode structure includes: disposing a light-scattering layer including a nanowire on a photoanode substrate; and coating the light-scattering layer with an inorganic binder solution to fix the light-scattering layer on the photoanode substrate. Due to the structure of the photoelectrode structure, the adhesive force between the light-scattering layer and the photoanode substrate is enhanced and the photocurrent density is increased.

Abstract: Apparatus and methods are provided for use with solar energy. An optical material defines light-directing surface features, each configured to direct incident photonic energy away from a respective dead-space. Photovoltaic cells or other entities receive photonic energy propagating through the optical material, including that portion being directed by the light-directing surface features. Various entities can be located within the dead-spaces defined between the photovoltaic cells.

Abstract: A method of forming a photoelectrode structure includes: disposing a light-scattering layer including a nanowire on a photoanode substrate; and coating the light-scattering layer with an inorganic binder solution to fix the light-scattering layer on the photoanode substrate. Due to the structure of the photoelectrode structure, the adhesive force between the light-scattering layer and the photoanode substrate is enhanced and the photocurrent density is increased.

Abstract: The present invention provides a method of annealing a semiconductor by applying a temperature-dependant phase switch layer to a semiconductor structure. The temperature-dependant phase switch layer changes phase from amorphous to crystalline at a predetermined temperature. When the semiconductor structure is annealed, electromagnetic radiation passes through the temperature-dependant phase switch layer before reaching the semiconductor structure. When a desired annealing temperature is reached the temperature-dependant phase switch layer substantially blocks the electromagnetic radiation from reaching the semiconductor structure. As a result, the semiconductor is annealed at a consistent temperature across the wafer. The temperature at which the temperature-dependant phase switch layer changes phase can be controlled by an ion implantation process.

Abstract: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.

Abstract: Disclosed are electrochromic materials containing a film-forming polymer with a Tg less than 100° C.; a plasticizer; an electrochromophore; an electron mediator; and a salt. Also disclosed are electrochromic devices using such electrochromic materials that can provide light-filtering, color-modulation, or reflectance-modulation in variable transmittance windows, variable-reflectance mirrors and other dynamic glazing applications.