Abstract: Methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.

Abstract: A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.

Abstract: A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

Abstract: A method is disclosed for producing signals representative of an image of a scene including the following steps: providing an image sensor with a lenticular lens pattern thereon, and projecting the image onto the image sensor via the lenticular lens pattern, the image sensor having a pixel element pattern and the lenticular lens pattern having diamond shaped lenticles and being diagonally oriented with respect to the horizontal scanning direction of the pixel element pattern; and producing image-representative signals by reading out signals from the pixel elements of the image sensor.

Abstract: A tiltable micro-electro-mechanical (MEMS) system lens comprises a microscopic lens located on a front surface of a semiconductor-on-insulator (SOI) substrate and a semiconductor rim surrounding the periphery of the microscopic lens. Two horizontal semiconductor beams located at different heights are provided within a top semiconductor layer. The microscopic lens may be tilted by applying an electrical bias between the lens rim and one of the two semiconductor beams, thereby altering the path of an optical beam through the microscopic lens. An array of tiltable microscopic lenses may be employed to form a composite lens having a variable focal length may be formed. A design structure for such a tiltable MEMS lens is also provided.

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.

Abstract: Embodiments relate to detector imaging arrays with scintillators (e.g., scintillating phosphor screens) mounted to imaging arrays or radiographic detectors using the same. For example, the detector imaging arrays can include a scintillator, an imaging array comprising imaging pixels, where each imaging pixel comprises at least one readout element and one photosensor; and a first dielectric layer formed between the scintillator and the imaging layer, wherein the dielectric constant of the insulating layer is very low. Embodiments according to the application can include a second dielectric layer formed over at least a portion of the non-photosensitive regions of the array and/or a first dielectric layer, each with a dielectric constant.

Abstract: Luminescent materials and methods of forming such materials are described herein. In one embodiment, a luminescent material has the formula: [AaSnbXxX?x?X?x?][dopant], wherein A is included in the luminescent material as a monovalent cation; X, X?, and X? are selected from fluorine, chlorine, bromine, and iodine; a is in the range of 1 to 5; b is in the range of 1 to 3; a sum of x, x?, and x? is a+2b; and at least X? is iodine, such that x?/(a+2b)??.

Abstract: A luminescent solar concentrator apparatus includes an optically transparent substrate and a photovoltaic material layer at least partially embedded within an optically transparent encapsulant material layer that contacts the optically transparent substrate. A luminescent material layer also contacts the optically transparent encapsulant material layer. Generally, the luminescent solar concentrator apparatus provides that the luminescent material layer is not located within an incoming optical pathway through at least the optically transparent substrate to the photovoltaic material layer.

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. The back surface includes a doped region, the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.

Abstract: There is provided a solid-state imaging device including a pixel array unit in which a plurality of unit pixels each having a photoelectric converting unit to generate and store photocharges according to an amount of received light and a charge storage unit to store the photocharges are arranged on a semiconductor substrate. The charge storage unit is formed on a path along which light is incident on the photoelectric converting unit.

Abstract: A method for texturing an active surface of a photovoltaic cell in single-crystal silicon or poly-crystal silicon includes depositing a resin on the active surface of the cell, texturing the resin on the active surface with geometric patterns, and texturing the active surface of the cell by eliminating the deposited resin. The depositing of the resin is preceded by pre-texturing the resin on a depositing tool. The texturing step of the resin on the active surface is simultaneous with the depositing of the resin on the active surface.

Abstract: A laser system with multiple laser pulses for removing material from a solar cell being fabricated. The laser system includes a single pulse laser source and a multi-pulse generator. The multi-pulse generator receives a single pulse laser beam from the single pulse laser source and converts the single pulse laser beam into a multi-pulse laser beam. A laser scanner scans the multi-pulse laser beam onto the solar cell to remove material from the solar cell.

Abstract: A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: In a semiconductor device, optical signal transfer capabilities are implemented on the basis of silicon-based monolithic opto-electronic components in combination with an appropriate waveguide. Thus, in complex circuitries, such as microprocessors and the like, superior performance may be obtained in terms of signal propagation delay, while at the same time thermal requirements may be less critical.

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: In a solid-state image pickup apparatus, a first insulating film continuously extends over at least part of a photoelectric conversion element and at least part of a gate electrode and further protrudes into a region above part of a floating diffusion region. A second insulating film is disposed above the first insulating film. The first insulating film has a higher dielectric constant than the second insulating film. An end of a part of the first insulating film protruding beyond an end of the gate electrode into the region above the floating diffusion region is located at a distance of 0.25 ?m or less from an end, on a side of the floating diffusion region, of the gate electrode.

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

Abstract: An electronic article includes an optoelectronic semiconductor having a refractive index of 3.7±2 and a dielectric layer disposed on the optoelectronic semiconductor. The dielectric layer has a thickness of at least 50 ?m and a refractive index of 1.4±0.1. The electronic article includes a gradient refractive index coating (GRIC) that is disposed on the optoelectronic semiconductor and that has a thickness of from 50 to 400 nm. The refractive index of the GRIC varies along the thickness from 2.7±0.7 to 1.5±0.1. The GRIC also includes a gradient of a carbide and an oxycarbide along the thickness. The carbide and the oxycarbide each independently include at least one silicon or germanium atom. The article is formed by continuously depositing the GRIC using plasma-enhanced chemical vapor deposition in a dual frequency configuration and subsequently disposing the dielectric layer on the GRIC.

Abstract: A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry.

Abstract: According to one embodiment, an image sensor, which may form part of a solid-state imaging device, such as a camera, comprises a photoelectric conversion element array, a light collection optical array, and a mirror unit that separates colors according to wavelength. Of the light that enters the image sensor, the colors are separated and at least a first colored ray is transmitted by the mirror unit to a dedicated photoelectric conversion element. The mirror unit reflects at least a second and third colored ray toward a laminate photoelectric conversion element for the second and third colored ray.

Abstract: A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the source wire and the relay electrode and not electrically connected between the source wire and the relay electrode. The conductive oxide film covers an end portion of the gate wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.

Abstract: This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 ?m.

Abstract: A transmissive image modulator for allowing image modulation over a wide bandwidth with multiple Fabry-Perot resonant modes and multiple absorption modes is provided. The transmissive image modulator includes a lower reflection layer; an active layer disposed on the lower reflection layer, including multiple quantum well layers and multiple barrier layers; an upper reflection layer disposed on the active layer; and at least one micro-cavity layer disposed in at least one of the lower and upper reflection layer. The active layer and the at least one micro-cavity layer have thicknesses of a multiple of ?/2, where ? is a resonant wavelength.

Abstract: Embodiments of radiographic imaging systems; digital radiography detectors and methods for using the same can include radiographic imaging pixel unit cells that can include a plurality of N pixel elements that each include a photoelectric thin-film conversion element connected in-series to a conversion thin-film switching element, a conductor connected to the plurality of N pixel elements and an output switching element connected between the conductor and an imaging array output. Scan lines or row lines can extend in a first direction coupled to more than one pixel unit cell and data lines or column lines can extend in a second direction coupled to more than one pixel unit cell.

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract: The disclosure discloses a method for modifying the light absorption layer, including: (a) providing a substrate; (b) forming a light absorption layer on the substrate, wherein the light absorption layer includes a Group IB element, Group IIIA element and Group VIA element; (c) forming a slurry on the light absorption layer, wherein the slurry includes a Group VIA element; and (d) conducting a thermal process for the light absorption layer with the slurry.

Abstract: The purpose of the present invention is to provide a method for disposing a photoelectric conversion element accurately on the focal point of a condenser lens. The method of the present invention comprises a step of forming a focal point on the reverse surface of the condenser lens to be a hydrophilic region, a step of removing the remained photoresist to obtain the condenser lens having the reverse surface where the hydrophilic region is surrounded by a water-repellent region formed of the fluoroalkylsilane film and a step of disposing the photoelectric conversion element on the hydrophilic region to obtain the solar cell comprising the condenser lens and the photoelectric conversion element.

Abstract: A method for manufacturing an LED package, comprising steps of: providing a substrate, the substrate forming a plurality of spaced rough areas on a surface thereof, each of the rough areas forming a rough structure thereon, a block layer being provided on a remaining part of the surface of the substrate relative to the rough areas; forming a metal layer on a top surface of each rough structure; forming a reflector on the substrate, the reflector defining a cavity and surrounding two adjacent metal layers; arranging an LED chip in the cavity, the LED chip electrically connecting to the two adjacent metal layers; forming an encapsulation layer in the cavity to seal the LED; and separating the substrate from the metal layers, the encapsulation layer and the reflector.

Abstract: Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel sensor cell includes a photosensitive region and a gate adjacent to the photosensitive region. The pixel sensor cell further includes a diffusion region adjacent to the gate. The pixel sensor cell further includes an isolation region located below a channel region of the gate and about the photosensitive region, which prevents electrons collected in the photosensitive region to drift to the diffusion region.

Abstract: A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion.

Abstract: A solid-state imaging element includes a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide layer via an adhesion layer; and an oxygen supply layer that is disposed between the oxide layer and the adhesion layer and is formed of a material which shows an oxidation enthalpy smaller than that of a material forming the oxide layer.

Abstract: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.

Abstract: A PV panel uses an array of small silicon sphere diodes (10-300 microns in diameter) connected in parallel. The spheres are embedded in an uncured aluminum-containing layer, and the aluminum-containing layer is heated to anneal the aluminum-containing layer as well as p-dope the bottom surface of the spheres. A phosphorus-containing layer is deposited over the spheres to dope the top surface n-type, forming a pn junction. The phosphorus layer is then removed. A conductor is deposited to contact the top surface. Alternatively, the spheres are deposited with a p-type core and an n-type outer shell. After deposition, the top surface is etched to expose the core. A first conductor layer contacts the bottom surface, and a second conductor layer contacts the exposed core. A liquid lens material is deposited over the rounded top surface of the spheres and cured to provide conformal lenses designed to increase the PV panel efficiency.

Abstract: Embodiments of the invention are directed to integrated resonance detectors and arrays of integrated resonance detectors and to methods for making and using the integrated resonance detectors and arrays. Integrated resonance detectors comprise a substrate, a conducting mirror layer, an active layer, and a patterned conducting layer. Electromagnetic radiation is detected by transducing a specific resonance-induced field enhancement in the active layer to a detection current that is proportional to the incident irradiance.

Abstract: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes a first film formed of an inorganic material, a second film that is formed of an organic material and formed on the first film, and includes a first surface and a second surface facing each other and lateral surfaces at boundaries of the first surface and the second surface, with the first surface contacting the first film, a third film that is formed of an inorganic material and covers the second surface and lateral surfaces of the second film, with a first sealing region contacting the first film being formed at a boundary between the second film and the third film, an organic light-emitting unit that is disposed on the third film to overlap with the second film, and a fourth film that covers the organic light-emitting unit, with a second sealing region contacting the third film being formed at a boundary of the fourth film.

Abstract: Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer 4, an MSM electrode 1 that is provided over the semiconductor layer, forms a Schottky junction with the semiconductor layer, and includes a slit-like opening, an anti-reflective film 2 formed over the semiconductor layer and the MSM electrode 1, and a Bragg reflection multilayer film 6 provided to a lower part of the semiconductor layer. The MSM electrode 1 includes a period capable of exciting surface plasmon to incident light of TM polarization, and obtains sufficient transmittance to the incident light of TE polarization.

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract: Implementations of a pixel including a substrate having a front side, a back side, and a photosensitive region formed on or near the front side, a dielectric layer formed on the front side, and a metal stack having a bottom side and a top side, the bottom side being on the dielectric layer. A light guide is formed in the dielectric layer and the metal stack and extending from the front side of the substrate to the top side of the metal stack, the light guide having a refractive index equal to or greater than the refractive index of the substrate. Other implementations are disclosed and claimed.

Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Abstract: A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.

Abstract: The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Abstract: Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on the upper mirror; and etching a grating into the grating layer.

Abstract: The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substrate particles to the at least one first conductor; converting the plurality of substrate particles into a plurality of diodes; forming at least one second conductor coupled to the plurality of spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer, with the lenses and the suspending polymer having different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Abstract: The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.

Abstract: A photodiode includes a photosensitive area and a polarizing grating located in front of the photosensitive area. The polarizing grating is formed by a plurality of galvanically conducting filaments.

Abstract: Disclosed is an integrated circuit (100) comprising a substrate (110) carrying a plurality of light-sensitive elements (112) and a blazed grating (120) comprising a plurality of diffractive elements (122) for diffracting respective spectral components (123-125) of incident light (150) to respective light-sensitive elements (112), the blazed grating (120) comprising a stack of layers, at least some of these layers comprising first portions, e.g. metal portions (202, 222, 242) arranged such that each diffractive element (122) comprises a stepped profile of stacked first portions with a first portion in a higher layer laterally extending beyond a first portion in a lower layer of said stepped profile.

Abstract: A method and apparatus used for forming a lens and spacer combination, and imager module employing the spacer and lens combination. The apparatus includes a mold having a base, spacer section, and mold feature. The method includes using the mold with a blank to create a spacer that includes an integral lens. The spacer and lens combination and imager modules can be formed on a wafer level.

Abstract: A method for increasing a translucency of a substrate is provided, whereby a scattering layer is deposited on the light exit side by means of chemical vapor deposition at atmospheric pressure using a flamer of a plasma, the scattering layer contains either zinc oxide or aluminum and/or aluminum oxide, more particularly aluminum-doped zinc oxide or silicon oxide.

Abstract: A solid-state image capture device including: at least one photoelectric converter at an image capture surface of a substrate; at least one on-chip lens at the image capture surface of the substrate and above a light-receiving surface of the photoelectric converter; and an antireflection layer on an upper surface of the on-chip lens. The antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin.