Abstract: A method for fabricating an image sensor having a pixel region and a logic region, which includes one of: (1) forming a photodiode in a substrate at the pixel region, (2) forming a first interlayer insulating layer on the substrate, (3) forming a first stop film on the first interlayer insulating layer, (4) forming an insulating film on the first stop film, (5) forming a second stop film on the insulating film, (6) forming at least one trench by selective etching of the second stop film and the insulating film positioned at the pixel region for exposing the first stop film, (7) forming conductive material on the second stop film to fill the at least one trench, and (8) forming a zero wiring layer in the at least one trench by planarizing the conductive material until the second stop film is exposed.

Abstract: A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.

Abstract: [Object] To provide an image sensor having high light collection efficiency and less crosstalk among pixels, a production method therefor, and an inspection apparatus.

Abstract: Provided is a semiconductor device having improved performance and an improved manufacturing yield. Over photodiodes formed in a semiconductor substrate, a plurality of first to third embedded insulating films are stacked to form a waveguide for light incident on each of the photodiodes. The first embedded insulating film is formed simultaneously with plugs when the plugs are formed. The second embedded insulating film is formed simultaneously with first wires when the first wires are formed. The third embedded insulating film is formed simultaneously with second wires when the second wires are formed.

Abstract: A solid-state imaging apparatus comprising a substrate having a first face and a second face opposing each other, and in which photoelectric conversion portions are formed, an optical system including microlenses provided on a side of the first face, and light absorbing portions provided on a side of the second face, wherein the apparatus has pixels of first type for detecting light of a first wavelength and second type for detecting light of a second wavelength shorter than the first wavelength, and the apparatus further comprises a first portion between the substrate and the light absorbing portion for each first type pixel, and a second portion between the substrate and the light absorbing portion for each second type pixel, and the first portion has a reflectance higher than that of the second portion for the light of the first wavelength.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell may include a substrate, an emitter layer positioned at a first surface of the substrate, a first anti-reflection layer that is positioned on a surface of the emitter layer and may include a plurality of first contact lines exposing a portion of the emitter layer, a first electrode that is electrically connected to the emitter layer exposed through the plurality of first contact lines and may include a plating layer directly contacting the emitter layer, and a second electrode positioned on a second surface of the substrate.

Abstract: A method of manufacturing a solar cell includes forming a buffer layer between an optical absorption layer and a window electrode layer. Forming the buffer layer includes depositing a metal material on the optical absorption layer, supplying a non-metal material on the optical absorption layer, supplying a gas material including oxygen atoms on the optical absorption layer, and reacting the metal material with the non-metal material. The gas material reacts with the metal material and the non-metal material to form a metal sulfur oxide on the optical absorption layer.

Abstract: An optical sensor includes an impurity region for a photodiode and an angle limiting filter limiting the incidence angle of incidence light incident to a light receiving area of the photodiode, which are formed on a semiconductor substrate. The angle limiting filter is formed by at least a first plug corresponding to a first insulating layer and a second plug corresponding to a second insulating layer located in an upper layer of the first insulating layer. Between the first plug and the second plug, there is a gap area having a gap space that is equal to or less than ?/2.

Abstract: The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.

Abstract: A solid-state imaging device includes a semiconductor substrate having a plurality of light-receiving portions (PD) formed therein, a wiring layer formed on the semiconductor substrate, color filters formed on the wiring layer in a manner individually corresponding to the light-receiving portions (PD) of the semiconductor substrate, and partition walls each formed between the individual color filters. Each of the partition walls includes a lower layer portion and an upper layer portion, an upper surface of the lower layer portion is modified into a modified layer, and an interface for facilitating reflection of penetration light from outside is structured between the modified layer and the upper layer portion.

Abstract: A back-side illumination image capturing apparatus includes a semiconductor substrate having a first surface for receiving incident light and a second surface located on the opposite side as the first surface, and including a photoelectric conversion portion, and a gate electrode disposed above the second surface. The apparatus further includes a first insulating layer disposed above the second surface of the semiconductor substrate, an interlayer insulation film disposed on the first insulating layer, a contact plug connected to the gate electrode, and a light-cutting portion for cutting light, of the incident light, that has passed through the photoelectric conversion portion. The light-cutting portion passes through at least part of the interlayer insulation film. The first insulating layer is located between the light-cutting portion and the semiconductor substrate.

Abstract: An integrated electronic device, delimited by a first surface and by a second surface and including: a body made of semiconductor material, formed inside which is at least one optoelectronic component chosen between a detector and an emitter; and an optical path which is at least in part of a guided type and extends between the first surface and the second surface, the optical path traversing the body. The optoelectronic component is optically coupled, through the optical path, to a first portion of free space and a second portion of free space, which are arranged, respectively, above and underneath the first and second surfaces.

Abstract: According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a fixed charge layer, a silicon nitride film, and a silicon oxide film. The photoelectric conversion element performs photoelectric conversion of converting incident light into the amount of charges corresponding to the amount of received light, and accumulates the charges. The fixed charge layer is formed on a light receiving surface side of the photoelectric conversion element, and holds negative fixed charges. The silicon nitride film is formed on a light receiving surface side of the fixed charge layer. The silicon oxide film is formed between the fixed charge layer and the silicon nitride film.

Abstract: A method for manufacturing a solid state image forming device in one embodiment includes forming a transparent resin layer on a semiconductor substrate having a plurality of photodiode layers formed thereon in a lattice, through R, G, and B color filters that are formed according to a Bayer arrangement; forming a plurality of first microlens mother dies on the transparent resin layer at the positions corresponding to the G color filters in such a manner that the outer peripheries thereof are separated from each other; forming a plurality of second microlens mother dies in such a manner that they are formed to fill the gap between the first microlens mother dies and the outer peripheries thereof are separated from each other; and etching the transparent resin layer with the plurality of first microlens mother dies and the plurality of second microlens mother dies being used as masks.

Abstract: A composite photovoltaic cell comprised of a substrate overlaid with metallic nanoparticles sensitized with quantum dots. Using flexible or rigid substrates in conjunction with metallic nanoparticles and quantum dots a highly efficient photovoltaic cell can be formed by using localized surface plasmon resonance. The localized surface plasmon resonance of the metallic nanoparticles enhances the absorption of photons and is further sensitized by quantum dots.

Abstract: A solid-state image pickup device includes an array of a first pixel and a second pixel. The second pixel includes a light shielding portion provided above a photoelectric conversion portion thereof and configured to block some of incident light so as to perform focus detection, and a light guiding portion provided at least above an upper face of the light shielding portion.

Abstract: According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating, in order, a first semiconductor layer of a first conductivity-type, a semiconductor light emitting layer and a second semiconductor layer of a second conductivity-type. The semiconductor laminated body includes a plurality of trenches arranged in a periodical manner to penetrate through the second semiconductor layer and the semiconductor light emitting layer and reach the first semiconductor layer. An insulating film is buried into the trenches, and has transparency to light emitted from the semiconductor light emitting layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode covers an upper surface of the second semiconductor layer.

Abstract: Embodiments of the invention provide for fabricating a filter, for electromagnetic radiation, in at least three ways, including (1) fabricating integrated thin film filters directly on a detector; (2) fabricating a free standing thin film filter that may be used with a detector; and (3) treating an existing filter to improve the filter's properties.

Abstract: In a back-illuminated solid-state image sensing element, the areas of the front surface sides of individual pixels are the same as one another, regardless of the colors of light components dispersed by filters and entering the individual pixels, and the areas of the rear surface sides of pixels which a dispersed red light component enters are larger than the areas of the rear surface sides of pixels which a green or blue light component enters.

Abstract: An image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

Abstract: An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams.

Abstract: A radiation conversion device is presented comprising at least one radiation conversion cell. The radiation conversion cell comprises a photo-absorber unit having a predetermined absorption spectrum for absorbing radiation of a certain wavelength range thereby converting the absorbed radiation into charge carriers, and at least partially reflective layer structure configured to be substantially reflective for said certain wavelength range.

Abstract: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.

Abstract: Improved building-integrated photovoltaic systems according to certain example embodiments may include concentrated photovoltaic skylights or other windows having a cylindrical lens array. The skylight may include an insulated glass unit, which may improve the Solar Heat Gain Coefficient (SHGC). The photovoltaic skylight and lens arrays may be used in combination with strip solar cells. Arrangements that involve lateral displacement tracking systems, or static systems (e.g., that are fixed at one, two, or more predefined positions) are contemplated herein. Such techniques may advantageously help to reduce cost per watt related, in part, to the potentially reduced amount of semiconductor material to be used for such example embodiments. A photovoltaic skylight may permit diffuse daylight to pass through into an interior of a building so as to provide lighting inside the building, while the strip solar cells absorb the direct sunlight and convert it to electricity, providing for SHGC tuning.

Abstract: A solid-state imaging apparatus includes a semiconductor substrate, an upper layer film, and on-chip lenses. On the semiconductor substrate, a plurality of pixels are formed. The upper layer film is laminated on the semiconductor substrate. The on-chip lenses are formed on the upper layer film so as to correspond to the respective pixels. A pupil correction amount of one of the on-chip lenses is changed depending on a distance between a center of a pixel area and the on-chip lens, and depending on a film thickness of the upper layer film at a position of the on-chip lens on the upper layer film.

Abstract: The present invention provides one or more embodiments of an optical interconnect design suitable for providing communication between computer system components in a computer system device. The optical interconnect can be integrated on a chip, and can be used to implement complex chips with a large number of cooperating components.

Abstract: A solid-state imaging device includes a photodetector which is formed on a substrate and is configured to generate signal charge by photoelectric conversion, a floating diffusion configured to receive the signal charge generated by the photodetector, a plurality of MOS transistors including a transfer transistor that transfers the signal charge to the floating diffusion and an amplification transistor that outputs an pixel signal corresponding to a potential of the floating diffusion, a multi-wiring layer which is formed in a layer higher than the substrate and is composed of a plurality of wiring layers electrically connected to the MOS transistors via contact portions, and a light-shielding film that is constituted by a bottom wiring layer disposed in a layer higher than the substrate and lower than the multi-wiring layer.

Abstract: An integrated circuit includes a substrate having a bonding pad region and a non-bonding pad region. A relatively large via, called a “big via,” is formed on the substrate in the bonding region. The big via has a first dimension in a top view toward the substrate. The integrated circuit also includes a plurality of vias formed on the substrate in the non-bonding region. The plurality of vias each have a second dimension in the top view, the second dimension being substantially less than the first dimension.

Abstract: An image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures may be formed on the substrate to prevent pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with absorptive antireflective coating material can help reduce optical pixel crosstalk and enhance global shutter efficiency.

Abstract: An optoelectonice device package, an array of optoelectronic device packages and a method of fabricating an optoelectronic device package. The array includes a plurality of optoelectronic device packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package including two geometrically parallel transparent edge portions and two geometrically parallel non-transparent edge portions, oriented substantially orthogonal to the transparent edge portions. The transparent edge portions are configured to overlap at least one adjacent package, and may be hermetically sealed. The optoelectronic device portion fabricated using R2R manufacturing techniques.

Abstract: A method for manufacturing an optical waveguide receiver includes the steps of growing first and second stacked semiconductor layer sections, the second stacked semiconductor layer section including a core layer and a cladding layer; forming a first mask including first and second portions; etching the first and second stacked semiconductor layer sections by using the first mask, the first and second stacked semiconductor layer sections covered with the first portion being etched in a mesa structure, the second stacked semiconductor layer section covered with the second portion being etched in a terrace-shaped structure; removing the second portion from the first mask with the first portion left; selectively etching the cladding layer until exposing a surface of the core layer; and sequentially forming a first metal layer, an insulating film, and a second metal layer on the core layer exposed in the step of selectively etching the cladding layer.

Abstract: To prevent deterioration in the sensitivity of a pixel part caused by variation in the distance between a waveguide and a photo diode and by decay of light due to suppression of reflection of entering light. In a pixel region, there is formed a waveguide which penetrates through a fourth interlayer insulating film or the like and reaches a sidewall insulating film. The sidewall insulating film is configured to have a stacked structure of a silicon oxide film and a silicon nitride film. The waveguide is formed so as to penetrate through even the silicon nitride film of the sidewall insulating film and to reach the silicon oxide film of the sidewall insulating film, or so as to reach the silicon nitride film of the sidewall.

Abstract: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.

Abstract: An image pickup lens is provided that includes a substrate; resin layers formed on both respective opposite surfaces of the substrate; a lens portion formed on at least any one of the surfaces of the substrate; and a spacer formed on at least any one of the surfaces of the substrate at an area surrounding the lens portion.

Abstract: Electrical contact to the front side of a photovoltaic cell is provided by an array of conductive through-substrate vias, and optionally, an array of conductive blocks located on the front side of the photovoltaic cell. A dielectric liner provides electrical isolation of each conductive through-substrate via from the semiconductor material of the photovoltaic cell. A dielectric layer on the backside of the photovoltaic cell is patterned to cover a contiguous region including all of the conductive through-substrate vias, while exposing a portion of the backside of the photovoltaic cell. A conductive material layer is deposited on the back surface of the photovoltaic cell, and is patterned to form a first conductive wiring structure that electrically connects the conductive through-substrate vias and a second conductive wiring structure that provides electrical connection to the backside of the photovoltaic cell.

Abstract: A solid-state imaging device, includes: plural unit pixels including a photoelectric conversion portion converting incident light into an electrical signal, and a waveguide having a quadratic curve surface at an inner surface and introducing the incident light to the photoelectric conversion portion.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.

Abstract: An apparatus for measuring state variables with at least one fiber-optic sensor, containing at least one optical coupler, at least one filter element and at least one photoelectric converter, where the optical coupler, the filter element and the photoelectric converter are integrated on a substrate, and the filter element contains at least one Bragg grating which is designed to supply the light portion reflected by the Bragg grating to the photoelectric converter.

Abstract: There is provided an image sensor having a plurality of pixels, each pixel including a light receiving portion configured to receive incident light, a waveguide configured to guide the incident light from a light incident surface to the light receiving portion, and a light shielding portion disposed between the light incident surface and the light receiving portion, for blocking the incident light. The light shielding portion has an opening formed near a light emitting surface of the waveguide. The light receiving portion receives the incident light passing through the waveguide and the opening. A width of a core of the waveguide and a width of the opening are set so that the widths increase as a wavelength of the light incident on a pixel becomes longer.

Abstract: A vapor deposition method of the present invention includes the steps of (i) preparing a mask unit including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other, (ii) while moving at least one of the mask unit and the film formation substrate (200) relative to the other, depositing a vapor deposition flow, emitted from the vapor deposition source (85), onto a vapor deposition region (210), and (iii) adjusting the position of a second shutter (111) so that the second shutter (111) blocks a vapor deposition flow traveling toward the vapor deposition unnecessary region (210).

Abstract: A solar concentrator is described. The solar concentrator includes a plane including a plurality of concentrating elements, wherein each concentrating element includes a hollow taper including a first opening; and at least one photoelectric conversion layer covering inner side surfaces of the concentrating elements.

Abstract: A method for providing, on a carrier (40), an insulative spacer layer (26) which is patterned such that a cavity (27) is formed which enables connection of an optical semiconductor element (41) to the intended conductor structure (22) when placed inside the cavity (27). The cavity (27) is formed such that it, through its shape, extension and/or depth, accurately defines a location of an optical element (45; 61) in relation to the optical semiconductor element (41). Through the provision of such a patterned insulative spacer layer, compact and cost-efficient optical semiconductor devices can be mass-produced based on such a carrier without the need for prolonged development or acquisition of new and expensive manufacturing equipment.

Abstract: According to one embodiment, a solid-state imaging device includes: a photodiode which is provided in a pixel region in which each pixel in a pixel forming region above a substrate is disposed; an interconnection layer which includes interconnections to connect the photodiode to peripheral circuits and an interlayer insulating film to insulate the interconnections from each other, and is provided above the photodiode; a color filter which is provided above the interconnection layer corresponding to the pixel region, and limits a wavelength of light incident on the photodiode. A light incident position correcting layer is provided between the color filter corresponding to the pixel disposed in at least the outer peripheral portion of the pixel forming region and the interconnection layer, and includes an anti-reflection film which is provided above the interconnection layer, and materials which have a negative refraction index and provided above the anti-reflection film.

Abstract: Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal.

Abstract: A solar energy utilization device wherein the surface of the incident light side of the transparent base material 1 is covered by water-and-oil-shedding transparent fine particles 5 being bound and fixed to the surface. A method for manufacturing a solar energy utilization device comprising process A of manufacturing reactive transparent fine particles 9 with the first functional group at one end; process B of manufacturing reactive transparent base material 4 with the second functional group at one end forming a covalent bond with the first functional group; process C of manufacturing transparent base material 10 by reacting the reactive transparent fine particles 9 with the reactive transparent base material 4 for binding and fixing the reactive transparent fine particles 9 to the surface; and process D of forming water-and-oil-shedding coating 16 on the surface of the transparent fine particles 5 being bound and fixed to the surface of the transparent base material 10.

Abstract: A tiltable micro-electro-mechanical (MEMS) system lens comprises a microscopic lens located on a front surface of a semiconductor-on-insulator (SOI) substrate and a semiconductor rim surrounding the periphery of the microscopic lens. Two horizontal semiconductor beams located at different heights are provided within a top semiconductor layer. The microscopic lens may be tilted by applying an electrical bias between the lens rim and one of the two semiconductor beams, thereby altering the path of an optical beam through the microscopic lens. An array of tiltable microscopic lenses may be employed to form a composite lens having a variable focal length may be formed. A design structure for such a tiltable MEMS lens is also provided.

Abstract: The present invention relates to an image sensor comprising a microlens array, and to a manufacturing method thereof. The method of the present invention includes gradually increasing the aluminum composition ratio of a compound semiconductor as the latter gradually gets farther from a substrate, to enable a microlens-forming layer to grow, and making the oxidation rate of the region adjacent to the substrate slower and the oxidation rate of the region farther from the substrate faster, making the interface between the oxidized region and the unoxidized region into a lens shape after the completion of oxidation. The thus-made lens is integrated into an image sensor. The present invention reduces costs for manufacturing image sensors in which a microlens is integrated, increases the signal-to-noise ratio and resolution of the image sensor, and achieves improved sensitivity.

Abstract: A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.

Abstract: Devices are described including a first component and a second component, wherein the first component comprises a Group III-N semiconductor and the second component comprises a bimetallic oxide containing tin, having an index of refraction within 15% of the index of refraction of the Group III-N semiconductor, and having negligible extinction coefficient at wavelengths of light emitted or absorbed by the Group III-N semiconductor. The first component is in optical contact with the second component. Exemplary bimetallic oxides include Sn1-xBixO2 where x?0.10, Zn2SnO2, Sn1-xAlxO2 where x?0.18, and Sn1-xMgxO2 where x?0.16. Methods of making and using the devices are also described.

Abstract: Disclosed is a method for manufacturing a photovoltaic device that includes: providing a substrate having a first electrode formed thereon; forming a first unit cell, the first unit cell including a first conductive silicon layer, an intrinsic silicon layer and a second conductive silicon layer, which are sequentially stacked from the first electrode; exposing to the air either a portion of an intermediate reflector formed on the first unit cell or the second conductive silicon layer of the first unit cell; forming the rest of the intermediate reflector or the entire intermediate reflector on the second conductive silicon layer of the first unit cell in a second manufacturing system; and forming a second unit cell on the intermediate reflector in the second manufacturing system, the second unit cell including a first conductive silicon layer, an intrinsic silicon layer and a second conductive silicon layer, sequentially stacked.