Abstract: Three-dimensional patterning methods of a three-dimensional microstructure, such as a semiconductor wire array, are described, in conjunction with etching and/or deposition steps to pattern the three-dimensional microstructure.

Abstract: A method is disclosed for making a textured surface on a solar cell. At first, there is provided a solar cell with a P-type layer and an N-type layer. Then, a silicon quantum dot-silicon nitride film is provided on the solar cell by chemical vapor deposition. Then, the silicon quantum dot-silicon nitride film is etched. In a first phase, the etching of the silicon nitride is faster than that of the silicon quantum dots so that the silicon quantum dots are exposed, thus forming a transient textured surface on the silicon quantum dot-silicon nitride film. In a second phase, the etching of the silicon nitride is slower than that of the silicon quantum dots so that some of the silicon quantum dots are removed, thus leaving cavities in the silicon quantum dot-silicon nitride film, i.e., forming a final textured surface on the silicon quantum dot-silicon nitride film.

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Abstract: A template 100 for three-dimensional thin-film solar cell substrate formation for use in three-dimensional thin-film solar cells. The template 100 comprises a substrate which comprises a plurality of posts 102 and a plurality of trenches 104 between said plurality of posts 102. The template 100 forms an environment for three-dimensional thin-film solar cell substrate formation.

Abstract: A method and apparatus for forming a roughened wavelength selective reflector layer are provided. In one embodiment, a method of forming a solar cell device includes forming a wavelength selective reflector layer between a first p-i-n junction and a second p-i-n junction formed on a substrate, and performing a post treatment process on the wavelength selective reflector layer to form the uneven surface with the roughness greater than 20 nm. In another embodiment, a photovoltaic device includes a wavelength selective reflector layer disposed between a first p-i-n junction and a second p-i-n junction formed on a substrate, wherein the wavelength selective reflector layer has an uneven surface having a surface roughness greater than 20 nm.

Abstract: Novel methods of producing photovoltaic cells are provided herein, as well as photovoltaic cells produced thereby, and uses thereof. In some embodiments, a method as described herein comprises doping a substrate so as to form a p+ layer on one side and an n+ layer on an another side, applying an antireflective coating on the p+ layer, removing at least a portion of the n+ layer, and then forming a second n+ layer, such that a concentration of the n-dopant in the second n+ layer is variable throughout a surface of the substrate.

Abstract: Novel methods of producing photovoltaic cells are provided herein, as well as photovoltaic cells produced thereby, and uses thereof. In some embodiments, a method as described herein comprises doping a substrate so as to form a p+ layer on one side and an n+ layer on an another side, removing at least a portion of the n+ layer, and then forming a second n+ layer, such that a concentration of the n-dopant in the second n+ layer is variable throughout a surface of the substrate.

Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.

Abstract: A method is provided for depositing a transparent conductive oxide (TCO) layer on a substrate, in which contaminations of the layers of the layer system is reduced through the diffusion of material from the substrate, and whose layer properties in respect to coupling and transmission of light are optimized. For that purpose, a barrier layer, a seed layer and a transparent conductive oxide layer are directly successively deposited on the substrate. Also, a thin-film solar cell is described which comprises such a transparent conductive oxide layer.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate, an emitter layer at a front surface of the substrate, a first anti-reflection layer on the emitter layer, a back surface field layer at a back surface of the substrate, and a second anti-reflection layer on the back surface field layer. The first anti-reflection layer and the second anti-reflection layer overlap may each other.

Abstract: A method for manufacturing a photovoltaic solar cell device includes the following. A p-n junction having a first doping density is formed. Formation of the p-n junction is enhanced by introducing a second doping density to form high doped areas for a dual emitter application. The high doped areas are defined by a masking process integrated with the formation of the p-n junction, resulting in a mask pattern of the high doped areas. A metallization of the high doped areas occurs in accordance with the mask pattern of the high doped areas.

Abstract: A graded order-sorting filter for hyperspectral imagers and methods of making the same are provided. The graded order-sorting filter includes a substrate wafer having a first side and a second side and is formed of a material that is substantially transparent to light photons. The graded order-sorting filter also includes an absorption filter deposited outwardly from the first side of the substrate wafer. The absorption filter is tapered along a taper direction and formed of a graded composition semiconductor material with a bandgap graded to decrease outwardly from the substrate wafer and/or graded along the taper direction. The graded composition semiconductor material is substantially transparent to the light photons for photon energies substantially less than the bandgap. The above filter can also be aligned to a two-dimensional array of pixels to form a hyperspectral imager.

Abstract: Devices, systems and methods of using same where hybrid substrate materials are provided with a substantially uniform surface to provide uniformity of properties, including interaction with their environments. Uniform surfaces are applied as coatings over, e.g., hybrid metal/silica, metal/polymer, metal/metal surfaces to mask different chemical properties of differing regions of the surface and to afford a protective surface for the hybrid structure.

Abstract: Devices, systems and methods of using same where hybrid substrate materials are provided with a substantially uniform surface to provide uniformity of properties, including interaction with their environments. Uniform surfaces are applied as coatings over, e.g., hybrid metal/silica, metal/polymer, metal/metal surfaces to mask different chemical properties of differing regions of the surface and to afford a protective surface for the hybrid structure.

Abstract: A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method includes successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by dry etching, and the rest of the plurality of the color filter pattern is formed by photolithography.

Abstract: The present invention provides a surface structure of a crystalline silicon solar cell and a manufacturing method thereof. The surface structure of the crystalline silicon solar cell comprises a main body having a front side microstructure and a back side microstructure. A surface morphology of the front side microstructure includes a plurality of cone structures, a surface morphology of the back side microstructure includes a plurality of arc structures, and a surface roughness of the front side microstructure is greater than that of the back side structure.

Abstract: Embodiments of the invention generally relate to device fabrication of thin films used as solar devices or other electronic devices, and include textured back reflectors utilized in solar applications. In one embodiment, a method for forming a textured metallic back reflector which includes depositing a metallic layer on a gallium arsenide material within a thin film stack, forming an array of metallic islands from the metallic layer during an annealing process, removing or etching material from the gallium arsenide material to form apertures between the metallic islands, and depositing a metallic reflector layer to fill the apertures and cover the metallic islands.

Abstract: Semiconductors are textured with aqueous solutions containing non-volatile alkoxylated glycols, their ethers and ether acetate derivatives having molecular weights of 170 or greater and flash points of 75° C. or greater. The textured semiconductors can be used in the manufacture of photovoltaic devices.

Abstract: A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments, the rear electrode comprises a reflective film (e.g., of Mo or the like) including one or more layers provided on an interior surface of a rear glass substrate of the photovoltaic device. In certain example embodiments, the interior surface(s) of the rear glass substrate and/or reflective film is/are textured so as to provide desirable electrical and reflective characteristics. The rear glass substrate and textured rear electrode/reflector are used in a photovoltaic device (e.g., CIS or CIGS solar cell) where an active semiconductor film is provided between the rear electrode/reflector and a front electrode(s).

Abstract: The present invention relates to a novel process for producing textured surfaces on multicrystalline, tricrystalline and monocrystalline silicon surfaces of solar cells or on silicon substrates which are used for photovoltaic purposes. It relates in particular to an etching process and an etching agent for producing a textured surface on a silicon substrate.

Abstract: A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Abstract: An optical waveguide includes a silicon wafer having two opposed sides. A first notch is defined in each of the two opposed sides such that the silicon wafer includes a head portion and a first stem portion.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a semiconductor substrate, a first doped region of a first conductive type, a second doped region of a second conductive type opposite the first conductive type, a back passivation layer having contact holes exposing a portion of each of the first and second doped regions, a first electrode formed on the first doped region exposed through the contact holes, a second electrode formed on the second doped region exposed through the contact holes, an alignment mark formed at one surface of the semiconductor substrate, and a textured surface that is formed at a light receiving surface of the semiconductor substrate opposite the one surface of the semiconductor substrate in which the first and second doped regions are formed.

Abstract: Inorganic solar cells having a nano-patterned p-n or p-i-n junction to reduce electron and hole travel distance to the separation interface to be less than the magnitude of the drift length or diffusion length, and meanwhile to maintain adequate active material to absorb photons. Formation of the inorganic solar cells may include one or more nano-lithography steps.

Abstract: Discussed herein are a solar cell and a fabricating method thereof. The solar cell includes a first conductivity-type semiconductor substrate, a second conductivity-type semiconductor layer formed on a front surface of the first conductivity-type semiconductor substrate, and having a conductivity opposite to that of the first conductivity-type semiconductor substrate, an anti-reflection film including at least one opening exposing a part of a surface of the second conductivity-type semiconductor layer, and formed on the second conductivity-type semiconductor layer, at least one front electrode contacting a part of the surface of the second conductivity-type semiconductor layer exposed through the at least one opening, and at least one rear electrode formed on a rear surface of the first conductivity-type semiconductor substrate, wherein the at least one front electrode includes a metal containing silver and lead-free glass frit.

Abstract: Semiconductor photovoltaic cells have surfaces that are textured for processing and photovoltaic reasons. The absorbing regions may have parallel grooves that reduce loss of solar energy that would otherwise be lost by reflection. One form of texturing has parallel grooves and ridges. The cell also includes regions of metallization for collecting the generated electrical carriers and conducting them away, which may be channels. The topography is considered during production, using a process that takes advantage of the topography to govern what locations upon will receive a specific processing, and which locations will not receive such a processing. Liquids are treated directly into zones of the cell. They migrate throughout a zone and act upon the locations contacted. They do not migrate to other zones, due to impediments to fluid flow that are features of the surface texture, such as edges, walls and ridges.

Abstract: The present invention relates to a novel process for making a multi-layer structure having transparent conductive oxide (TCO) layers with a textured surface comprising forming a metal-rich TCO layer. The process of the present invention is particularly useful in the manufacture of photovoltaic cells. In the device made by the process of the present invention, the textured surface of TCO layers can maintain high roughness while the interface effects caused by the overetching of the TCO layers are eliminated.

Abstract: A method for producing a solid-state imaging device, which including: a photoelectric conversion section; a charge transfer section having a charge transfer electrode; and an antireflection film covering a light-receiving region in the photoelectric conversion section, wherein forming the antireflection film includes: forming a sidewall on a lateral wall of the charge transfer electrode after forming the charge transfer electrode; forming an antireflection film on a substrate surface where the sidewall is formed; forming a resist on the antireflection film; melting and flattening the resist to expose the antireflection film on the charge transfer electrode; removing the antireflection film by using the resist as the mask; removing the sidewall; covering the charge transfer electrode with an insulating film; and forming a light-shielding film that reaches a level lower than the top surface of the antireflection film, and that surrounds the periphery of the antireflection film.

Abstract: For producing a photovoltaic module (1), the front electrode layer (3), the semi-conductor layer (4) and the back electrode layer (5) are patterned by separating lines (6, 7, 8) to form series-connected cells (C1, C2, . . . Cn, Cn+1) with a laser (14) emitting infrared radiation. During patterning of the semiconductor layer (4) and the back electrode layer (5) the power of the laser (14) is so reduced that the front electrode layer (3) is not damaged.

Abstract: A template for growth of an anticipated semiconductor film has a deformation textured substrate. The template also has an intermediate epitaxial film coupled to the deformation textured substrate, the intermediate epitaxial film being chemically compatible and substantially lattice matched with the anticipated semiconductor film. A method of manufacturing a template for the growth of an anticipated semiconductor is also disclosed. A substrate is deformed to produce a textured surface. An intermediate epitaxial film, chemically compatible and substantially lattice matched with the anticipated semiconductor film, is deposited. A further disclosed photovoltaic device has a semiconductor layer, a deformation textured substrate, and an intermediate epitaxial film coupled to the deformation textured substrate. The intermediate epitaxial film is chemically compatible and substantially lattice matched with the semiconductor layer. The semiconductor layer is epitaxially grown on the intermediate epitaxial film.

Abstract: A photovoltaic cell substrate, a method of manufacturing the photovoltaic cell substrate, and a photovoltaic cell. The photovoltaic cell substrate includes a transparent substrate having a first surface-roughening film formed on one surface thereof and a transparent conductive film formed over the first surface-roughening film of the transparent substrate. The transparent conductive film is made of a metal oxide which is doped with a dopant.

Abstract: There is provided a thin film type solar cell including: a crystalline silicon wafer subject to surface texturing and forming an n-type semiconductor layer; a pn junction formed of a non-crystalline p-type silicon layer deposited on one surface of the crystalline silicon wafer and a non-crystalline n-type silicon layer deposited on the other surface thereof; a transparent surface electrode formed outward of the pn junction; a water repellent light transmitting layer formed on the pn junction, the surface electrode, or both the pn junction and the surface electrode and allowing for an increase in light transmittance; and a pattern electrode formed on the surface electrode or the water repellent light transmitting layer.

Abstract: The invention provides a method for increasing the usable surface area of a semiconductor wafer having a substantially planar surface and a thickness dimension at right angles to said substantially planar surface, the method including the steps of selecting a strip thickness for division of the wafer into a plurality of strips, selecting a technique for cutting the wafer into the strips at an angle to the substantially planar surface, in which the combined strip thickness and width of wafer removed by the cutting is less than the thickness of the wafer, cutting the wafer into strips using the selected technique and separating the strips from each other.

Abstract: A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.

Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

Abstract: A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

Abstract: A high-efficiency solar cell device producible in a simplified manner, and a method of manufacturing the same are provided. An insulation layer is formed on the back surface side of a semiconductor substrate of a first conductivity type. Removing part of the insulation layer exposes part of the semiconductor substrate to form a plurality of first through holes. A first layer of the first conductivity type is formed on the insulation layer and on the part of the semiconductor substrate exposed in the plurality of first through holes, whereby first junction regions are formed. Removing part of the first layer and the insulation layer exposes part of the semiconductor substrate to form a plurality of second through holes. A second layer of an opposite conductivity type is formed on the first layer and on the part of the semiconductor substrate exposed in the plurality of second through holes, whereby second junction regions are formed.

Abstract: The present invention relates to solar cells. Such solar cells include a substrate containing a first impurity of a first conductive type and having a textured surface with a plurality of jagged portions. Such solar cells also have an emitter layer positioned on the textured surface and containing a second impurity of a second conductive type opposite to the first conductive type, a first electrode having a plurality of first metal particles, electrically connected to the emitter layer, and a second electrode electrically connected to the substrate. The diameter of the first metal particles is larger than the peak-to-peak distance between adjacent jagged portions.

Abstract: A dye-sensitized solar cell including ZnO nanowire arrays grown of a flat substrate for harvesting solar energy is integrated with a piezoelectric nanogenerator for harvesting ultrasonic wave energy. The two energy harvesting approaches work simultaneously or individually and can be integrated in parallel or serial for raising the output current, voltage or power, respectively. A solar cell employs an optical fiber and semiconductor nanowires grown around the fiber. A p-n junction based design, organic-inorganic heterojunction, or a dye-sensitized structure is built at the surfaces of the nanowires. Light entering the fiber from a tip propagates through the fiber until it enters a nanowire where it reaches a photovoltaic element. Light entering the fiber cannot escape until it interacts with a photovoltaic element, thereby increasing the solar conversion efficiency. The fiber can transmit light, while the nanowires around the fibers increase the surface area of light exposure.

Abstract: An inverse opal structure having dual porosity, a method of manufacturing the inverse opal structure, a dye-sensitized solar cell, and a method of manufacturing the dye-sensitized solar cell improve the light scattering effects of an included light scattering layer and improve functions of included electrodes. The inverse opal structure includes a plurality of first pores regularly arranged in a photonic crystal structure and a plurality of second pores formed on walls of the first pores in which the second pores have a nano-sized diameter.

Abstract: A front contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation processes. In yet another embodiment, a back contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, base regions, and a front surface field are formed through ion implantation processes.

Abstract: One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

Abstract: Methods for manufacturing three-dimensional thin-film solar cells using a template. The template comprises a template substrate comprising a plurality of three-dimensional surface features. The three-dimensional thin-film solar cell substrate is formed by forming a sacrificial layer on the template, subsequently depositing a semiconductor layer, selectively etching the sacrificial layer, and releasing the semiconductor layer from the template. Select portions of the three-dimensional thin-film solar cell substrate are then doped with a first dopant, while other select portions are doped with a second dopant. Next, selective emitter and base metallization regions are formed using a PECVD shadow mask process.

Abstract: One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

Abstract: A method operable to produce integrated 3-dimension and planar metallization structure for thin film solar cells is provided. This method involves depositing a thin film on a template mask, the template mask having both substantially flat and textured areas. The thin film is then released from the template mask. Emitters are formed on the thin film. Finally, metallization of the substantially flat areas takes place.

Abstract: A solar cell capable of improving efficiency, and a method for manufacturing the same is disclosed, wherein the method for manufacturing the solar cell comprises forming seeds in a predetermined surface portion of a semiconductor substrate doped with a first dopant through the use of silicon source gas; forming an irregularity structure on the semiconductor substrate by growing the seeds through a heat-treatment process; forming a first semiconductor layer doped with a second dopant in the semiconductor substrate with the irregularity structure, wherein the second dopant is different from the first dopant; and forming a front electrode at one side of the semiconductor substrate, the front electrode electrically connected to the first semiconductor layer.

Abstract: A method of manufacturing a solar cell, which can improve productivity by improving a surface texturing process for effectively capturing incident light during a process for manufacturing the solar cell, is provided. The method includes cleaning a substrate, texturing a surface of the substrate, doping and diffusing impurities into the substrate, coating an anti-reflection layer on the substrate, formed metal electrodes on the substrate, and cutting off corner electrodes among the metal electrodes. The texturing of the surface of the substrate includes printing a mask having a predetermined pattern on the substrate through an imprint process, etching the substrate, and removing the mask.

Abstract: The present invention discloses a solar cell and a manufacturing method. A top surface of a substrate is transformed into an active surface with a waved shape. Next, a conductive layer, a CIGS compound layer and a transparent conductive layer are sequentially formed on the active surface. The active surface with the waved shape is formed by a destructive forming method, so that the conductive layer, the CIGS compound layer and the transparent conductive layer formed on the active surface in the following step also have the waved shape. Accordingly, a light-absorbing area and a reacting area can be increased, and conversion efficiency of light energy being converted into the electric energy is raised.