Abstract: A solar cell, including a silicon substrate (1), a front side (2) designed for coupling light, and a rear side (3) is provided. It is essential that the front side, at least in a partial region, has a front side texture, which along a spatial direction A is periodic, the period length being greater than 1 ?m, and that the rear side, at least in a partial region, has a rear side texture, which along a spatial direction B is periodic, with the period length being smaller than 1 ?m. The spatial direction A is disposed at an 80° to 100° angle to the spatial direction B.

Abstract: Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a substrate including a pixel area and a logic circuit area; an interlayer dielectric layer on the substrate and having a trench in the pixel area; and an insulating layer microlens formed in the trench of the interlayer dielectric layer. According to the method, a substrate including a pixel area and a logic circuit area is prepared; an interlayer dielectric layer is formed on the substrate; a first microlens pattern is formed on the interlayer dielectric layer on the pixel area; and a second microlens pattern is formed by etching the interlayer dielectric layer on the pixel area using the first microlens pattern as an etch mask. During the etching, a second photoresist pattern, exposing the first microlens pattern, can be used to protect the interlayer dielectric layer on the logic circuit area.

Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

Abstract: A solar cell and a manufacturing method thereof are provided. The method includes forming a microstructure including a texturing on the surface of a semiconductor substrate of a first conductive type, forming a plurality of nanostructures on the surface of the semiconductor substrate, forming an emitter layer by implanting impurities of a second conductive type opposite to the first conductive type in a front face of the semiconductor substrate, forming an anti-reflective coating (ARC) on the emitter layer, forming a front electrode passing through a portion of the ARC and being coupled to the emitter layer, and forming a back electrode on a rear face of the semiconductor substrate of the first conductive type, the rear face being opposite to the face on which the front electrode is formed. A dominant light-collecting characteristic can be approached by forming nanostructures on a semiconductor substrate of a solar cell.

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2-20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract: The invention relates generally to preparation of a substrate for use in a photovoltaic device by application of a filling material and subsequent planarization of the top surface; optionally, a barrier layer is added.

Abstract: A method for forming a photodiode is provided. The method comprises: providing a region of semiconductor material having a first surface and a second surface; coupling a first conductive layer to the first surface of the semiconductor material; and coupling a second conductive surface to the second surface of the semiconductor material to form a photodiode, the second conductive surface comprising a metal surface having a two-dimensional periodic array of openings therethrough, wherein the photodiode is configured to be operated such that light is incident on the second conductive surface. A method for reducing the required thickness of a photodiode is also provided.

Abstract: A photodiode PD1 is provided with an n? type semiconductor substrate 1 with a pn junction formed of a first conductivity type semiconductor region and a second conductivity type semiconductor region. For the n? type semiconductor substrate 1, an accumulation layer 7 is formed on the second principal surface 1b side of the n? type semiconductor substrate 1 and an irregular asperity 10 is formed at least in regions opposed to the pn junction in a first principal surface 1a and in the second principal surface 1b. The regions opposed to the pn junction in the first principal surface 1a and in the second principal surface 1b of the n? type semiconductor substrate 1 are optically exposed.

Abstract: A coplanar type photovoltaic cell and a method for fabricating the same are provided. The coplanar type cell includes: a semiconductor substrate having a front surface and a back surface; and an anode stack and a cathode stack isolated from each other and formed on the back surface of the semiconductor substrate.

Abstract: A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.

Abstract: A method for manufacturing a solar cell includes conducting texturing by injecting plasma on an entire surface of a solar cell wafer, forming an emitter layer by diffusing a solid source on the textured solar cell wafer, forming a passivation layer on the solar cell wafer on which the emitter layer is formed, and forming electrodes. A PSG (PhosphoSilicate Glass) layer is prevented from being formed on the solar cell wafer.

Abstract: A conductive contact pattern is formed on a surface of solar cell by forming a thin conductive layer over at least one lower layer of the solar cell, and ablating a majority of the thin conductive layer using a laser beam, thereby leaving behind the conductive contact pattern. The laser has a top-hat profile, enabling precision while scanning and ablating the thin layer across the surface. Heterocontact patterns are also similarly formed.

Abstract: Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 ?m to about 10 ?m on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 ?m to about 8 ?m on the substrate.

Abstract: A gold colloidal solution is applied by dripping to a radio-transparent substrate having grooves with a high aspect ratio. The applied gold colloidal solution flows into the groove by capillarity, and is retained in the bottom of the groove. The radio-transparent substrate is heated from beneath by a laser beam at a part of the groove to which the gold colloidal solution has been applied, so the gold colloidal solution is vaporized and dried. Thus, gold colloidal particles remaining in the groove form a seed layer for electrolytic plating.

Abstract: A thin film solar cell includes a transparent substrate, a first transparent conductive layer, a photovoltaic layer, a second transparent conductive layer, a first adhesive layer and a reflective layer is provided. The first transparent conductive layer is disposed on a back surface of the transparent substrate. The photovoltaic layer is disposed on the first transparent conductive layer. The second transparent conductive layer is disposed on the photovoltaic layer. The first adhesive layer is disposed on the second transparent conductive layer. The reflective layer is disposed on the first adhesive layer. The surface of the first adhesive layer in contact with the reflective layer is a texture structure. The light beam passing the first adhesive layer is reflected by the texture structure or the reflective layer and transmitted back to the photovoltaic layer, and the wavelength range of the reflected light beam is substantially between 600 nm and 1,100 nm.

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract: A thin-film solar cell and a manufacture method thereof are provided. The thin-film solar cell comprises a transparent substrate, a first transparent conductive layer, a photovoltaic layer, a second transparent conductive layer and a light reflecting structure. The transparent substrate has a light incident surface and a back surface opposite to the light incident surface. The first transparent conductive layer is disposed on the back surface of the transparent substrate. The photovoltaic layer is disposed on the first transparent conductive layer. The second transparent conductive layer is disposed on the photovoltaic layer. The light reflecting structure is disposed on the second transparent conductive layer. The manufacture method forms the light reflecting structure having a texture structure on the thin film to enhance utilization of light beams in the thin-film solar cell so as to further improve photoelectric conversion efficiency of the thin-film solar cell.

Abstract: An anti-reflective surface on a photovoltaic can reduce optical reflection.

Abstract: The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.

Abstract: A lateral p-i-n photodetector is provided that includes an array of vertical semiconductor nanowires of a first conductivity type that are grown over a semiconductor substrate also of the first conductivity type. Each vertically grown semiconductor nanowires of the first conductivity type is surrounded by a thick epitaxial intrinsic semiconductor film. The gap between the now formed vertically grown semiconductor nanowires-intrinsic semiconductor film columns (comprised of the semiconductor nanowire core surrounded by intrinsic semiconductor film) is then filled by forming an epitaxial semiconductor material of a second conductivity type which is different from the first conductivity type. In a preferred embodiment, the vertically grown semiconductor nanowires of the first conductivity type are n+ silicon nanowires, the intrinsic epitaxial semiconductor layer is comprised of intrinsic epitaxial silicon, and the epitaxial semiconductor material of the second conductivity type is comprised of p+ silicon.

Abstract: A method of manufacturing a solar cell having a texture on a surface of a silicon substrate includes first forming a porous layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of oxidizing reagent containing metal ions and hydrofluoric acid. Second, a texture is formed by etching the surface of the silicon substrate after the porous layer is formed, by dipping the silicon substrate into a mixed acid mainly containing hydrofluoric acid and nitric acid.

Abstract: A method of manufacturing a crystalline silicon solar cell includes steps of preparing a crystalline silicon substrate, texturing the substrate using plasma to form uneven patterns for increasing light absorption, doping ions in the substrate using plasma to form a doping layer for a PN junction, heating the substrate to activate the doped ions, forming an antireflection film on the doping layer, and forming front and back electrodes on front and back surfaces of the substrate, respectively.

Abstract: A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.

Abstract: A photonic device (200) and method (100) of making the photonic device (200) employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (210). The method (100) includes growing (110) the polycrystalline layer (210) on a substrate (201). The polycrystalline layer includes a transition region (212) of variously oriented grains and a region (214) of columnar grain boundaries (215) adjacent to the transition region. The method further includes preferentially etching (120) the colunmar grain boundaries to provide tapered structures (220) of the semiconductor material that are continuous (217) with respective aligned grains (213) of the transition region. The tapered structures are predominantly single crystal. The method further includes forming (140) a conformal semiconductor junction (240) on the tapered structures and providing (160) first and second electrodes.

Abstract: Methods and devices for manufacturing a TCO layer of a thin film solar cell over a transparent substrate are described. Thereby, a first ZnO-containing layer is puttered with a sputtering method selected from the group consisting of: DC-sputtering, MF-sputtering, pulsed-sputtering, and combinations thereof, over the substrate with a first set of deposition parameters, a second ZnO-containing layer is puttered with a sputtering method selected from the group consisting of: DC-sputtering, MF-sputtering, pulsed-sputtering, and combinations thereof, over the first ZnO-containing layer with a second set of deposition parameters, at least one of the deposition parameters of the second set of deposition parameters is different from the corresponding parameter of the first set of deposition parameters; and the second ZnO-containing layer is textured.

Abstract: A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.

Abstract: Disclosed is a wafer type solar cell and a method for manufacturing the same, which facilitates to enhance hole-collecting efficiency, and to improve cell efficiency by preventing transmittance of solar ray from being lowered, the wafer type solar cell comprising a first semiconductor layer of a semiconductor wafer; a second semiconductor layer doped with P-type dopant, wherein the second semiconductor layer is formed on one surface of the first semiconductor layer, on which solar ray is incident; a third semiconductor layer doped with N-type dopant, wherein the third semiconductor layer is formed on the other surface of the first semiconductor layer; a first passivation layer on the second semiconductor layer; a second passivation layer on the third semiconductor layer; a first electrode connected with the second semiconductor layer; and a second electrode connected with the third semiconductor layer.

Abstract: A solar cell and a method for manufacturing the solar cell are discussed. The solar cell includes a substrate, an emitter layer formed at an incident surface of the substrate, a first electrode part connected to the emitter layer, and a textured surface positioned on the incident surface of the substrate, at which the emitter layer is formed. The textured surface includes a plurality of depressions. A surface of an area of the substrate, on which the first electrode part is formed, is a flat surface not including the plurality of depressions.

Abstract: A thin film silicon solar cell and a manufacturing method thereof. The thin film silicon solar cell comprises a glass substrate, a first electrode layer, a light absorbing layer, a second electrode layer, and a metal electrode layer sequentially stacked on top of one another. The second electrode layer has a texture surface and concavities formed on the texture surface, and each of the concavities has a width falling within a range of 100 nm-1600 nm and a depth less than 800 nm.

Abstract: A photovoltaic cell texturization method is disclosed. The method includes providing a photovoltaic cell substrate; and texturizing a surface of the photovoltaic cell substrate. The texturizing implements a nanoimprint lithography process to expose a portion of the surface of the photovoltaic cell substrate. An etching process is performed on the exposed portion of the exposed portion of the surface of the photovoltaic cell substrate.

Abstract: A pixel cell having a photosensor within a silicon substrate; and an oxide layer provided over the photosensor, the oxide layer having a grated interface with said silicon substrate, and a method of fabricating the pixel cell having a grated interface.

Abstract: A method of fabricating a solar cell is disclosed. The solar cell fabricating method includes forming a first transparent conductive layer on a transparent substrate, texturing an upper surface of the first transparent conductive layer using an etchant solution configured to contain an acid with a molecular weight of about 58˜300, forming a photoelectric conversion layer on the first transparent conductive layer, forming a second transparent conductive layer on the photoelectric conversion layer, and forming a rear electrode on the second transparent conductive layer.

Abstract: A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.

Abstract: Methods for manufacturing a layer stack for a thin-film solar cell and layer stacks are provided. The layer stack includes a transparent substrate having a first refraction index, a transparent conductive oxide layer comprising ZnO, wherein the transparent conductive oxide layer is deposited over the substrate and has a second refraction index, and a further layer, which is deposited between the transparent conductive oxide layer and the substrate, wherein the layer has a third refraction index in a range from the first refraction index to the second refraction index, the layer comprises a metal, and wherein the layer composition has a metal content of 0.5 to 10 weight-%.

Abstract: A first facet of each of a plurality of pyramids on a surface of a workpiece is doped to a first dose while a second facet and a third facet of each of the plurality of pyramids is simultaneously doped to a second dose different than the first dose. The first facets may enable low resistance contacts and the second and third facets may enable higher current generation and an improved blue response. Ion implantation may be used to perform the doping.

Abstract: The present invention relates to a solar cell and a method for manufacturing the same. More specifically, the present invention provides a silicon solar cell capable of minimizing defects and recombination of electrons-holes by removing a damaged layer formed by a laser edge isolation process to isolate a silicon substrate and covering a protective layer on a surface thereof and a method for manufacturing the same.

Abstract: A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout.

Abstract: A solar cell fabrication process includes printing of dopant sources over a polysilicon layer over backside of a solar cell substrate. The dopant sources are cured to diffuse dopants from the dopant sources into the polysilicon layer to form diffusion regions, and to crosslink the dopant sources to make them resistant to a subsequently performed texturing process. To prevent counter doping, dopants from one of the dopant sources are prevented from outgassing and diffusing into the other dopant source. For example, phosphorus from an N-type dopant source is prevented from diffusing to a P-type dopant source comprising boron.

Abstract: A manufacturing method for a solid-state imaging device according to an embodiment of the present invention includes a step of forming a transparent resin layer above a principal surface of a semiconductor substrate, a step of exposing the transparent resin layer to light by using a grating mask having a first transmission region and a second transmission region having a higher transmittance of the light than the first transmission region in mutually separate positions, a step of forming first resin patterns and second resin patterns lower than the first resin patterns in mutually separate positions, and a step of forming first microlenses and second microlenses lower than the first microlenses.

Abstract: A method for texturing a surface of a substrate comprising creating micro-fractures in the surface of the substrate to be textured, and etching the surface of the substrate to be textured to open the micro-fractures.

Abstract: Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.

Abstract: A conducting material can include a fibrous substrate and a conductive polymer coating on a surface of the fibrous substrate.

Abstract: A transparent electrically conductive substrate having a high photovoltaic conversion efficiency surface electrode, and a method for its manufacture, are disclosed. A thin-film solar cell and a method for its manufacture are also disclosed. An indium oxide based amorphous transparent electrically conductive film is formed on the substrate as an underlying film 21 and a zinc oxide based crystalline transparent electrically conductive film is formed on the so formed amorphous transparent electrically conductive film to form a surface electrode 2 of an optimum uneven surface structure. As a consequence, the surface electrode 2 having a high light confining effect may be provided and a thin-film solar cell 10 may be provided which exhibits higher photovoltaic conversion efficiency (FIG.

Abstract: There are provided a dye-sensitized solar cell easy to manufacture, high in power extraction efficiency, and suitable for upsizing, and a method for manufacturing the dye-sensitized solar cell. The dye-sensitized solar cell 10 comprises a transparent substrate 12; a porous semiconductor layer 14 having a dye adsorbed thereto; a conductive metal film 16; and a substrate 20 provided with a conductive film 18 and arranged opposite to the transparent substrate 12. A large number of deep poriform through-holes 24 are irregularly formed in the conductive metal film 16. The dye-sensitized solar cell 10 includes a large number of porous semiconductor particles 25 one end of which is exposed to an electrolyte 22 through the conductive metal film 16 and the other end of which joins the porous semiconductor layer 14.

Abstract: The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer.

Abstract: A photoelectric conversion device having a new anti-reflection structure is provided. The photoelectric conversion device includes a first-conductivity-type crystalline semiconductor region, an intrinsic crystalline semiconductor region, an intrinsic semiconductor region, and a second-conductivity-type semiconductor region that are stacked over a first electrode. An interface between the first electrode and the first-conductivity-type crystalline semiconductor region is flat. The intrinsic crystalline semiconductor region includes a crystalline semiconductor region, and a plurality of whiskers that are provided over the crystalline semiconductor region and include a crystalline semiconductor. In other words, the intrinsic crystalline semiconductor region includes the plurality of whiskers; thus, a surface of the second electrode is uneven.

Abstract: A method for manufacturing a photoelectric conversion device including a first-conductivity-type crystalline semiconductor region, an intrinsic crystalline semiconductor region, and a second-conductivity-type semiconductor region that are stacked over an electrode is provided for a new anti-reflection structure. An interface between the electrode and the first-conductivity-type crystalline semiconductor region is flat. The intrinsic crystalline semiconductor region includes a crystalline semiconductor region, and a plurality of whiskers that are provided over the crystalline semiconductor region and include a crystalline semiconductor. The first-conductivity-type crystalline semiconductor region and the intrinsic crystalline semiconductor region are formed by a low pressure chemical vapor deposition method at a temperature higher than 550° C. and lower than 650° C.

Abstract: A method for the production of a wafer-based, back-contacted heterojunction solar cell includes providing at least one absorber wafer. Metallic contacts are deposited as at least one of point contacts and strip contacts in a predetermined distribution on a back side of the at least one absorber wafer. The contacts have steep flanks that are higher than a cumulative layer thickness of an emitter layer and an emitter contact layer and are sheathed with an insulating sheath. The emitter layer is deposited over an entire surface of the back side of the at least one absorber wafer. The emitter contact layer is deposited over an entire surface of the emitter layer so as to form an emitter contact system. At least one of the emitter layer and the emitter contact layer is selectively removed so as to expose the steep flanks of the contacts that are covered with the insulating sheath.

Abstract: A photodetector and a spectrum detector, which can be miniaturized and do not require a complicated alignment of an optical axis, are disclosed. A photodetector comprises a substrate and a semiconductor that is formed on the substrate and has a plurality of convex portions. The photodetector detects light transmitted through the plurality of convex portions among light incident on the plurality of convex portions. Accordingly, it is possible to detect light with a specific peak wavelength without using an optical component such as a diffraction grating or prism, so that a small-sized photodetector that does not require a complicated alignment of the optical axis in an optical system may be implemented.

Abstract: A photoelectric conversion device having a novel anti-reflection structure is provided. An uneven structure on a surface of a semiconductor is formed by growth of the same or different kind of semiconductor instead of forming an anti-reflection structure by etching a surface of a semiconductor substrate or a semiconductor film. For example, a semiconductor layer including a plurality of projections is provided on a light incident plane side of a photoelectric conversion device, thereby considerably reducing surface reflection. Such a structure can be formed by a vapor deposition method; therefore, contamination of the semiconductor is not caused.