Abstract: A thin film solar cell includes: a thin film-like substrate; an electrode arranged on the substrate; a photoelectric conversion layer stacked on the electrode; a transparent conductive film arranged on the photoelectric conversion layer; diffraction recessed portions provided periodically on a photoelectric conversion layer-side surface of the electrode; and reflection preventing recessed portions provided periodically on a photoelectric conversion layer-side surface of the transparent conductive film.

Abstract: A solar cell structure having high photoelectric conversion efficiency and method of manufacturing the same, comprising: a substrate; an amorphous silicon layer; a Group III-V polycrystalline semiconductor layer; a transparent conductive layer formed sequentially on said transparent substrate; and a pattern layer formed on a surface of said transparent conductive layer. Incident light is absorbed through said transparent conductive layer, and is guided by said pattern layer horizontally into distributing evenly in said Group III-V polycrystalline semiconductor layer, thus raising photoelectric conversion efficiency of said solar cell structure.

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.

Abstract: Embodiments relate to an image sensor and a method of manufacturing the image sensor. An image sensor according to the embodiment includes: silicon patterns that are formed on a flexible substrate; a device isolation pattern that is formed between the silicon patterns; a circuit layer that is formed on the silicon patterns and has a first isolation pattern directly connected with the device isolation pattern; and a wiring layer that is formed on the circuit layer and includes a second isolation pattern corresponding to the first isolation pattern, and a wiring electrically connected with the circuit layer. The embodiments provide a flexible image sensor that can be applied to a variety of products and a method of manufacturing the flexible image sensor.

Abstract: A film is used on the surface of a color filter array to keep tiny particles that remain on the surface so that they do not interfere during subsequent processing steps. The particles may be the result of forming the color filter array or other structures. The film can prevent the formation of particle clusters in an imager.

Abstract: Disclosed is a method for cleaning the substrate of a solar cell. The method includes: providing a single or poly crystalline substrate; performing a wet etching process such that the surface of the substrate is textured; performing an atmospheric pressure plasma cleaning process on the textured substrate; and forming p-n junction.

Abstract: Disclosed is a method for heating a substrate of a solar cell. The method includes: providing a single or poly crystalline substrate; heating the substrate at atmosphere by a non-contact heater; and forming a thin film, which includes amorphous silicon or silicon alloy, on the substrate.

Abstract: To provide a conveying unit that holds a workpiece and conveys the workpiece at a constant rate in one direction, a laser oscillator that emits a pulsed laser beam, a splitter that splits a pulsed laser beam into a pattern having a predetermined geometric pitch, a first deflector that scans the split pulsed laser beam in the other direction substantially orthogonal to the one direction, a second deflector that adjusts and deflects the split pulsed laser beam deflected by the first deflector on the surface to be processed in the one direction so as to scan the resultant pulsed laser beam onto the surface to be processed at a constant rate equal to a rate at which the workpiece is conveyed, and a condenser that condenses the split pulsed laser beam deflected by the second deflector onto the surface to be processed.

Abstract: Systems and methods for fabrication of nanostructured solar cells having arrays of nanostructures are described, including nanostructured solar cells having a repeating pattern of pyramid nanostructures, providing for low cost thin-film solar cells with improved PCE.

Abstract: A thin film photoelectric conversion device for performing photoelectric conversion of a wide range of light, from the visible range to the infrared range, is provided.

Abstract: A manufacturing method of a solar cell including a transparent conductive film formed on a transparent substrate includes the steps of: preparing a target, the target including ZnO and a material including a substance including an Al or a Ga, the ZnO being a primary component of the target; in a first atmosphere including a process gas, applying a sputter electric voltage to the target and forming a first layer included in the transparent conductive film; in a second atmosphere including a greater amount of an oxygen gas compared to the first atmosphere, applying a sputter electric voltage to the target and forming a second layer on the first layer, the second layer being included in the transparent conductive film; and forming an irregular shape by performing an etching process on the transparent conductive film.

Abstract: A grid stack structure of a solar cell, which includes a silicon substrate, wherein a front side of the silicon is doped with phosphorus to form a n-emitter and a back side of the silicon is screen printed with aluminum (Al) metallization; a dielectric layer, which acts as an antireflection coating (ARC), applied on the silicon; a mask layer applied on the front side to define a grid opening of the dielectric layer, wherein an etching method is applied to open an unmasked grid area; a light-induced plated nickel or cobalt layer applied to the front side with electrical contact to the back side Al metallization; a silicide layer formed by rapid thermal annealing of the plated nickel (Ni) or cobalt (Co); an optional barrier layer electrodeposited on the silicide; a copper (Cu) layer electrodeposited on the silicide/barrier film layer; and a thin protective layer is chemically applied or electrodeposited on top of the Cu layer.

Abstract: The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.

Abstract: A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H2O2 so as to form a nano-texturized silicon substrate.

Abstract: Optoelectronic devices having enhanced conversion efficiencies and associated methods are provided. In one aspect, for example, a method of making an optoelectronic device can include applying an absorption layer onto a support substrate, the absorption layer including a material such as CIGS, CIG, CI, CZT, CdTe, and combinations thereof. Additional steps include providing a element-rich environment in proximity to the absorption layer, and irradiating at least a portion of the absorption layer with laser radiation through the element-rich environment thereby incorporating the element into the absorption layer.

Abstract: A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom is smaller than ?90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.

Abstract: A high efficiency thin-film photovoltaic module is formed on a substrate. The photovoltaic module includes a plurality of stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width. Each cell includes a barrier material overlying the surface and a first electrode overlying the barrier material. Each cell further includes an absorber formed overlying the first electrode. The absorber includes a copper gallium indium diselenide compound material characterized by an energy band-gap of about 1 eV to 1.1 eV. Each cell additionally includes a buffer material overlying the absorber and a bi-layer zinc oxide material comprising a high resistivity transparent layer overlying the buffer material and a low resistivity transparent layer overlying the high resistivity transparent layer.

Abstract: Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.

Abstract: A method for manufacturing a solar cell includes forming a textured surface having a plurality of jagged portion at a surface of a substrate of a first conductive type; forming an emitter portion by doping an impurity into the substrate, the emitter portion having a second conductive type opposite to the first conductive type; removing a portion of the emitter portion by using a dry etching method, to form an emitter region; forming an anti-reflection layer on the emitter region; and forming a first electrode connected to the emitter region and a second electrode connected to the substrate.

Abstract: A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film.

Abstract: The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing comprises a plurality of cusped features providing diffusive scattering. Constructing the solar cell with a smooth front surface results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.

Abstract: A thin-film solar cell can include a light-reflective metal electrode layer, a first transparent conductive layer, a semiconductor layer and a front transparent conductive layer. The metal electrode layer can be formed on a substrate and has an uneven structure. The first transparent conductive layer can contain an amorphous transparent conductive material. The thin-film solar cell further can have a second transparent conductive layer between the first transparent conductive layer and the semiconductor layer. The second transparent conductive layer can be made of a crystalline transparent conductive material. Due to the first transparent conductive layer made amorphous, the surface roughness of the metal electrode layer is reduced so that the semiconductor layer can be formed with a good film quality.

Abstract: A solar battery unit is proposed, including: a first electrode; a nano rough layer formed on the first electrode; a semiconductor active layer formed on the nano rough layer; and a second electrode formed on the semiconductor active layer, thereby enabling the nano rough layer formed on the first electrode to fully absorb solar energy not completely absorbed by the semiconductor active layer so as to allow solar energy to be fed back to the semiconductor active layer with a view to maximizing absorption of solar energy.

Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

Abstract: Embodiments of the current invention describe methods of forming different types of crystalline silicon based solar cells that can be combinatorially varied and evaluated. Examples of these different types of solar cells include front and back contact silicon based solar cells, all-back contact solar cells and selective emitter solar cells. These methodologies all incorporate the formation of site-isolated regions using a combinatorial processing tool and the use of these site-isolated regions to form the solar cell area. Therefore, multiple solar cells may be rapidly formed on a single crystalline silicon substrate for use in combinatorial methodologies. Any of the individual processes of the methods described may be varied combinatorially to test varied process conditions or materials.

Abstract: A multiple-junction photoelectric device includes a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of n-i-p or n-p configuration, on which a second conducting layer is deposited, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, top and bottom faces, the latter having a peak-valley roughness >150 nm, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom<?90top by at least 3; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination ?this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the surface of the bottom face of the intermediate layer have an inclination ?this angle.

Abstract: A system and method of capturing solar energy, and related method of manufacturing, are disclosed. In at least one embodiment, the system includes a first lens array having a plurality of lenses, and a first waveguide component adjacent to the lens array, where the waveguide component receives light, and where the waveguide component includes an array of prism/mirrored facets arranged along at least one surface of the waveguide component. The system further includes at least one photovoltaic cell positioned so as to receive at least a portion of the light that is directed out of the waveguide. A least some of the light passing into the waveguide component is restricted from leaving the waveguide component upon being reflected by at least one of the prism/mirrored facets, hereby the at least some light restricted from leaving the waveguide component is directed by the waveguide toward the at least one photovoltaic cell.

Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

Abstract: Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Abstract: The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

Abstract: A solar cell structure including a photovoltaic layer, an upper electrode, a lower electrode, and a passivation layer is provided. The photovoltaic layer has an upper surface, a lower surface and a plurality of side surfaces, wherein the photovoltaic layer includes a first type and a second type semiconductor layer. The upper electrode is disposed at the upper surface of the photovoltaic layer and electrically connected with the second type semiconductor layer, wherein the second type semiconductor layer is between the upper electrode and the first type semiconductor layer. The bottom electrode is disposed at the bottom surface of the photovoltaic layer and electrically connected with the first type semiconductor layer, wherein the first type semiconductor layer is between the bottom electrode and the second type semiconductor. The passivation layer covers at least one of the side surfaces so as to reduce the leakage current formed on the side surfaces.

Abstract: A light enhancement film provided in the disclosure includes a substrate and an optical microstructure having a plurality of hexagonal cylindrical lenses inseparably arranged on a surface of the substrate in accordance with a honeycombed arrangement. Each of the hexagonal cylindrical lenses has different cross-sectional areas that are gradually narrowed from the surface of the substrate in a direction away from the substrate, and every two adjacent lenses have a gap therebetween. Furthermore, a display device having the light enhancement film is provided as well.

Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

Abstract: A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. A glass/ceramic handling layer is then formed on the PV cell structures. The PV cell structures with handling layers are then exfoliated from the mother wafer. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels. The glass/ceramic handling layers provide structural integrity to the thin epitaxial solar cells during the separation process and subsequent handling.

Abstract: A method of semiconductor junction formation in RTA process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being driven form a dopant source into the surface of the wafer irradiated by a laser beam. The laser beam is emitted by CW- or pulsed operated lasers including fiber lasers operative to provide annealing and diffusion operation. Optionally, the passivation of the surface and formation of the antireflection coating are performed simultaneously with the penetration the dopant species.

Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.

Abstract: Methods for texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Texturizing of the wafer surface is carried out with a TMAH based solution. The texturizing solution may further include isopropyl alcohol and ethylene glycol at different dilutions in DI water to further improves results.

Abstract: A thin film solar cell includes a transparent substrate, a first transparent conductive layer, a photovoltaic layer, a second transparent conductive layer, a first adhesive layer and a reflective layer is provided. The first transparent conductive layer is disposed on a back surface of the transparent substrate. The photovoltaic layer is disposed on the first transparent conductive layer. The second transparent conductive layer is disposed on the photovoltaic layer. The first adhesive layer is disposed on the second transparent conductive layer. The reflective layer is disposed on the first adhesive layer. The surface of the first adhesive layer in contact with the reflective layer is a texture structure. The light beam passing the first adhesive layer is reflected by the texture structure or the reflective layer and transmitted back to the photovoltaic layer, and the wavelength range of the reflected light beam is substantially between 600 nm and 1,100 nm.

Abstract: A method for forming a photodiode is provided. The method comprises: providing a region of semiconductor material having a first surface and a second surface; coupling a first conductive layer to the first surface of the semiconductor material; and coupling a second conductive surface to the second surface of the semiconductor material to form a photodiode, the second conductive surface comprising a metal surface having a two-dimensional periodic array of openings therethrough, wherein the photodiode is configured to be operated such that light is incident on the second conductive surface. A method for reducing the required thickness of a photodiode is also provided.

Abstract: Metal-semiconductor-metal (MSM) photodetectors may see increased responsivity when a plasmonic lens is integrated with the photodetector. The increased responsivity of the photodetector may be a result of effectively ‘guiding’ photons into the active area of the device in the form of a surface plasmon polariton. In one embodiment, the plasmonic lens may not substantially decrease the speed of the MSM photodetector. In another embodiment, the Shottkey contacts of the MSM photodetector may be corrugated to provide integrated plasmonic lens. For example, one or more of the cathodes and anodes can be modified to create a plurality of corrugations. These corrugations may be configured as a plasmonic lens on the surface of a photodetector. The corrugations may be configured as parallel linear corrugations, equally spaced curved corrugations, curved parallel corrugations, approximately equally spaced concentric circular corrugations, chirped corrugations or the like.

Abstract: A solar cell includes: a photoelectric converter in which a first electrode layer, a photoelectric conversion layer, and a second electrode layer are stacked on a substrate in order; and a texture layer that is disposed between the substrate and the first electrode layer, made of a transparent material in a visible light region, and has a continuous irregular configuration on a face that is in touch with the first electrode layer.

Abstract: Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.

Abstract: The present invention provides a volumetric solar structure comprising one or more solar cells. The solar structure comprises a semiconductor substrate of a first conductivity type having a patterned surface thereof, the pattern defining an array of spaced-apart grooves of a funnel-like shape, and a second opposite conductivity type material layer positioned on at least a part of the patterned surface of the substrate. The structure thereby defines junction regions, in which charge carriers are generated by incident radiation energy to which the structure is exposed. The junction regions are located at different heights upon the patterned surface of the substrate.

Abstract: The present disclosure provides a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (?m) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6° to 9° tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias.

Abstract: A solar cell module and a method of manufacturing the solar cell module are disclosed. The method in accordance with an embodiment of the present invention includes forming a conductive bump on a conductive pad formed on one surface of a solar cell, forming a circuit pattern on one surface of a transparent substrate, in which the circuit pattern corresponds to a position of the conductive bump, adhering the solar cell to the transparent substrate in such a way that the conductive bump is in direct contact with the circuit pattern, and forming a protective resin layer on one surface of the transparent substrate in such a way that the solar cell is covered. By using the above steps, a thinner solar cell module can be implemented while improving the manufacturing efficiency.

Abstract: A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.

Abstract: A method for manufacturing a solar cell includes forming a textured surface at a surface of a substrate of a first conductivity type using a dry etching method, the textured surface having a plurality of jagged portions, forming a doping pattern by applying a doping material containing an impurity of a second conductivity type on a portion of the textured surface, forming an emitter region by doping the impurity of the second conductive type into the substrate to form a first emitter portion and a second emitter portion having a different impurity doped concentration from each other, forming an anti-reflection layer on the first emitter portion and the second emitter portion, and forming a first electrode connected to the second emitter portion and a second electrode connected to the substrate.

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract: Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process, typically etching. Portions exposed by the stamp being are removed, moved, and portions that protected by the resist, remain. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired.