Abstract: Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.

Abstract: Disclosed are an air circulation system and a final polishing apparatus including the same. The air circulation system improves the degree of contamination in a final polishing apparatus including a housing formed to accommodate a load unit, an unload unit, and a plurality of polishing units. The air circulation system includes air purification units mounted at positions corresponding to the positions of the load unit, the unload unit, and the plurality of polishing units. The air purification units discharge contaminated air in the housing to the outside of the housing, purify the discharged air, and supply the purified air again into the housing.

Abstract: A retaining ring comprises a generally annular body. The body comprises a top surface, a bottom surface, an outer surface connected to the top surface at an outer top perimeter and the bottom surface at an outer bottom perimeter, and an inner surface connected to the top surface at an inner top perimeter and the bottom surface at an inner bottom perimeter. The inner surface comprises seven or more planar facets. Adjacent planar facets are connected at corners. The inner bottom perimeter comprises straight edges of the planar facets connected at the corners.

Abstract: A dressing apparatus includes a dresser provided in a polishing apparatus for polishing a board-like work by relative movement between the work and a polishing pad while bringing the polishing pad into contact with the work, the dresser having a dressing surface that slides relative to a polishing surface of the polishing pad to dress the polishing pad; a dresser drive member that rotates the dresser; a high-pressure water generating device that supplies high-pressure water pressurized to 1 to 15 MPa; and a high-pressure water injection nozzle that injects the high-pressure water toward the dressing surface rotating.

Abstract: A two part retaining ring is described. A rigid upper portion has an annular recess along its inner diameter. An annular wearable lower portion has an inner diameter, an annular extension defined by the inner diameter and a vertical wall that is perpendicular to a surface of the second portion and opposite to the inner diameter. The annular extension fits into the annular recess of the annular first portion. A bonding material is on the vertical wall of the annular second portion.

Abstract: A rocker polishing apparatus for full-aperture deterministic polishing of a planar part includes a control system, a substrate, a lifting plate, a polishing module and a measuring module. The polishing module and the measuring module are arranged on the substrate. The lifting plate is arranged between the polishing module and the measuring module. The polishing module includes a rocker mechanism, a polishing pad surface dressing mechanism, a polishing pad surface profile measuring apparatus and a continuous polishing pad mechanism. The apparatus allows the material removal rate distribution of the planar part and the surface profile of the planar part be in the normalized mirror symmetry relationship by controlling the material removal rate distribution on the surface of the planar part, thereby implementing the deterministic polishing of the planar part and ensuring the efficient convergence of the surface profile of the planar part in the polishing process.

Abstract: The present application relates to a pad-temperature regulating apparatus for regulating a temperature of a surface of a polishing pad. The pad-temperature regulating apparatus includes a pad-contact member, a supply system for supplying a heating liquid and a cooling liquid into the pad contact member, a pad-temperature measuring device for measuring the temperature of the surface of the polishing pad, and a controller for performing a PID control of manipulated variables of a first flow control valve and a second flow control valve. The controller includes a memory in which a learned model constructed to maintain a temperature behavior curve, created based on measured values of the pad-temperature measuring device, within a predetermined allowable range, is stored; and a processing device which inputs at least one temperature behavior parameter to the learned model, and performs a calculation to output a change value of PID parameter for the PID control.

Abstract: An apparatus for chemical mechanical polishing (CMP) of a substrate is described herein. The apparatus includes an extension disposed between a retaining ring and a chucking membrane. The extension is disposed radially outward from the edge of the substrate and is configured to contact the retaining ring during substrate processing. The extension provides a repeatable and controlled point of contact between the retaining ring and the chucking membrane. The extension may have multiple configurations, such that the contact point between the retaining ring and the chucking membrane is set at a pre-determined location or such that the contact point is moveable by an adjustable stop.

Abstract: A rotation controlling section of a control unit calculates a maximum thicknesswise difference in a wafer by using a noncontact thickness measuring instrument, and if the maximum thicknesswise difference exceeds a tolerance, relatively changes a rotational speed of a chuck table relative to a rotational speed of a spindle. This can shift a rotational speed ratio, which is a ratio between the rotational speed of the spindle and the rotational speed of the chuck table, from an integer. Therefore, the maximum thicknesswise difference can be made small through spark-out processing. As a result, cyclic variations in thickness value of the wafer are reduced, enabling planarization of a ground surface of the wafer.

Abstract: A double-sided polishing apparatus includes: a lower surface plate; an upper surface plate; and a carrier disposed between the lower surface plate and the upper surface plate and holding a disk-shaped workpiece, wherein the carrier is configured to rotate about a center of the lower surface plate and the upper surface plate and to rotate about a center of the carrier, the double-sided polishing apparatus includes a thickness measuring sensor at a fixed position above the upper surface plate or below the lower surface plate or at a movable position in an upper portion of the upper surface plate or a lower portion of the lower surface plate, the carrier includes circular perforations each holding the workpiece at a position eccentric to the center of the carrier, when a central position of any of the perforations preset by a user is defined as a first reference position, with a distance between a center of the upper surface plate or the lower surface plate and a center of any of the perforations preset by the u

Abstract: An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a carrier body, an outer membrane assembly, an annular segmented chuck, and an inner membrane assembly. The outer membrane assembly is supported from the carrier body and defines a first plurality of independently pressurizable outer chambers. The annular segmented chuck supported below the outer membrane assembly, and includes a plurality of concentric rings that are independently vertically movable by respective pressurizable chambers of the outer membrane assembly. At least two of the rings having passages therethrough to suction-chuck a substrate to the chuck. The inner membrane assembly is supported from the carrier body and is surrounded by an innermost ring of the plurality of concentric rings of the chuck. The inner membrane assembly defines a second plurality of independently pressurizable inner chambers and has a lower surface to contact the substrate.

Abstract: To improve uniformity in polishing of a polished surface of a substrate regardless of a tolerance of a diameter of the substrate. A substrate processing apparatus includes a table 100, a pad holder 226, a swing mechanism, a supporting member 300A, 300B, a measuring instrument 400, and a driving mechanism 320. The table 100 supports a substrate WF. The pad holder 226 holds a polishing pad 222. The polishing pad 222 polishes the substrate WF supported to the table 100. The swing mechanism swings the pad holder 226. The supporting member 300A, 300B supports the polishing pad 222 swung to outside the table 100 by the swing mechanism. The measuring instrument 400 is configured to measure a diameter of the substrate WF. The driving mechanism 320 adjusts a position of the supporting member 300A, 300B with respect to the substrate WF supported to the table 100 according to the diameter of the substrate WF measured by the measuring instrument 400.

Abstract: A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

Abstract: A recycled polishing pad includes an upper layer pad and a supplementary pad. The upper layer pad includes a first surface and a second surface opposite to the first surface. The first surface has a plurality of first grooves and the second surface has a plurality of second grooves. The upper layer pad further includes a connecting body connecting the first grooves and the second grooves. The supplementary pad is in contact with the second surface of the upper layer pad. A depth of each of the first grooves is less than a depth of each of the second grooves.

Abstract: A polishing apparatus according to an embodiment includes a polishing pad including a polishing surface for polishing a polishing target object and a membrane including a contact surface that is in contact with the polishing target object on the opposite side of the polishing surface. The contact surface is deformed from a flat surface into an uneven surface in response to pressure applied to the membrane.

Abstract: An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to hold a conditioning disk against the polishing surface, an in-situ polishing pad thickness monitoring system; and, a controller configured to receive a signal from the monitoring system and generate a measure of polishing pad wear rate by applying a predictive filter to the signal.

Abstract: A grinding apparatus has a hermetically sealed chamber defined by a portion of a holding surface which extends radially outwardly from a wafer, an outer wall surface of a first annular packing, a lower surface of a plate, and an inner wall surface of a second annular packing. A negative pressure is developed by suction forces applied from the holding surface, allowing the atmospheric pressure to press the plate toward the holding surface and causing the first annular packing to press an outer circumferential portion of the wafer against the holding surface. Since the outer circumferential portion of the wafer is pressed against the holding surface under the suction forces from the holding surface and the atmospheric pressure, the forces pressing the outer circumferential portion of the wafer against the holding surface are increased easily at a low cost without increasing the size and weight of the grinding apparatus.

Abstract: One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises: a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

Abstract: A system and method of forming a planarization layer on a substrate is disclosed. The method can include holding a superstrate with a superstrate chuck, the superstrate chuck positioned relative to a diffusing element, where the diffusing element includes a pattern and the superstrate chuck includes one or more geometric features, and where the pattern of the diffusing element aligns with the one or more geometric features of the superstrate chuck. The method can also include dispensing a formable material over the substrate, contacting the formable material over the substrate with a superstrate, providing a set of beams that pass through the diffusing element to cure the formable material over the substrate and form a layer over the substrate while the superstrate is contacting the formable material.

Abstract: Apparatus and methods relating to chemical mechanical polishing (CMP) are described herein. An edge load ring (ELR) is configured to fit inside a retaining ring of a CMP head. The ELR includes an annular body having an inner surface and an outer surface opposite the inner surface, the outer surface having a diameter configured to slip inside a retaining ring. The annular body includes a body portion formed from a first material and a bottom projection extending below the body portion. The bottom projection has a bottom surface facing away from the body portion, and the bottom projection is formed form a second material different from the first material. The annular body includes a venting feature formed through the annular body, the venting feature being in fluid communication between the inner and outer surfaces.

Abstract: A component in a CMP tool disclosed herein having a surface and a hydrophobic layer deposited on the surface. In one example, the component is a component for delivering a fluid in a CMP tool. The component for delivering a fluid in a CMP tool includes an elongated member having a first end and a second end, and an elongated upper surface extending between the two ends. A hydrophobic layer is deposited on the elongated upper surface. In another example, the component is a ring shaped body having an upper side and a lower side. A hydrophobic layer is deposited on the inner surfaces of both the upper and lower sides. In another example, the component is a disk shaped body having a top surface, bottom surface, and ledge defined by the top and bottom surfaces. A hydrophobic layer is deposited on the surfaces and the ledge.

Abstract: A chemical mechanical polishing system includes a metrology station having a sensor configured to measure a thickness profile of a substrate, a robotic arm configured to transfer the substrate from the metrology station to a polishing station having, a platen to support a polishing pad having a polishing surface, a carrier head on the polishing surface, the carrier head having a membrane configured to apply pressure to the substrate in the carrier head, and a controller configured to receive measurements from the sensor and configured to control the robotic arm to orient the substrate in the carrier head according to substrate profile and a removal profile for the carrier head.

Abstract: A retaining ring for a polishing process is disclosed. The retaining ring includes a body comprising an upper portion and a lower portion, and a sacrificial surface disposed on the lower portion, the sacrificial surface comprising a negative tapered surface having a taper height that is about 0.0003 inches to about 0.00015 inches.

Abstract: A multi-modal diamond abrasive package or slurry is disclosed for polishing hard substrates. The multi-modal diamond abrasive package or slurry generally includes a plurality of diamond abrasives. Each one of the diamond abrasives of the plurality of diamond abrasives has a particle size. Wherein, the multi-modal diamond abrasive package or slurry includes a first diamond abrasive and a second diamond abrasive. The first diamond abrasive has a first particle size, and the second diamond abrasive has a second particle size. Where, the first particle size of the first diamond abrasive is smaller than the second particle size of the second diamond abrasive.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: A system for monitoring contamination level of effluent of an offline brush conditioning system includes a first set of reservoirs configured to collect first effluents from corresponding portions of a first brush and a second set of reservoirs configured to collect second effluents from corresponding portions of a second brush, and the first and second effluents are from a fluid used to condition the first and second brushes that are configured to clean a surface of a semiconductor wafer. An effluent contamination monitor is configured to monitor contamination levels of the first and second effluents, wherein the monitored contamination levels may provide feedback for use in the brush conditioning.

Abstract: A substrate polishing apparatus includes a top ring for pressing a substrate against a polishing pad to perform substrate polishing; a spectrum generating unit that directs light onto a surface of the substrate of interest for polishing, receives reflected light, and calculates a reflectivity spectrum corresponding to the wavelength of the reflected light; and a storage that stores a plurality of thickness estimating algorithms for estimating the thickness of the polished surface in accordance with the reflectivity spectrum. A plurality of thickness estimating algorithms is selected among the thickness estimating algorithms stored in the storage, and a switching condition is set. The thickness of the polished surface is estimated by using the set thickness estimating algorithms, and if the switching condition is satisfied, the thickness estimating algorithm to be applied is switched.

Abstract: Provided is a method of double-side polishing a silicon wafer using a double-side polishing apparatus, the method including in succession: a first polishing step of performing double-side polishing while supplying a first polishing agent that is an alkaline aqueous solution containing abrasive grains to the polishing cloths; a polishing agent switching step of stopping the supply of the first polishing agent and starting the supply of a second polishing agent that is an alkaline aqueous solution containing a water-soluble polymer with no abrasive grains, with the polishing cloths of the upper plate and the lower plate being in contact with the front surface and the back surface of the silicon wafer, respectively and with the upper plate and the lower plate being continuously rotated; and a second polishing step of performing double-side polishing while supplying the second polishing agent to the polishing cloths.

Abstract: An elastic membrane to be used for a polishing head includes a contact portion configured to come into contact with a wafer, an annular side wall provided to stand on an outer peripheral end of the contact portion, a first partition wall linearly extending inward in a radial direction in sectional view from the side wall, and a second partition wall linearly extending inward and upward in the radial direction in sectional view from an outer peripheral end portion of the contact portion, wherein the first partition wall, the second partition wall, and the side wall constitute an edge pressure chamber for pressing an edge of the wafer.

Abstract: In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.

Abstract: A wafer inspection system is provided. The wafer inspection system comprises: a transfer region in which a transfer device is arranged; an inspection region in which test heads for inspecting a substrate are arranged; and a maintenance region in which the test heads are maintained. The inspection region is located between the transfer region and the maintenance region, a plurality of inspection rooms accommodating the test heads are adjacent to each other in the inspection region, and the test heads are configured to be unloaded from the inspection region to the maintenance region.

Abstract: A planarization apparatus is provided. The planarization apparatus includes a platen, and a grinding wheel. The platen is configured to support a wafer. The grinding wheel is over the platen and configured to grind the wafer. The grinding wheel includes a base ring, and a plurality of grinding teeth mounted on the base ring. The plurality of grinding teeth includes a plurality of grinding abrasives, and the plurality of grinding abrasives is ball type.

Abstract: A method for processing a semiconductor wafer is provided. The method includes placing a semiconductor wafer on a wafer chuck. The method further includes performing a process over the wafer. The method also includes supplying a cooling gas to the backside of the semiconductor wafer via a groove and a number of ventilation apertures located in the groove. Two of the neighboring ventilation apertures are separated in a circumferential direction relative to the center of the wafer chuck by a predetermined angle that is less than 90 degrees.

Abstract: Disclosed is a process for manufacturing individual die devices, with a desired or predicted amount of flatness, from a bonded wafer process. The flatness of a bonded wafer is measured at point in the wafer manufacturing process. This measurement is compared to a value predetermined by an empirical analysis of previous devices made by the same process. If the flatness of the bonded wafer is not at the predetermined value, then one or more compensation layers are provided to the bonded wafer to obtain the predetermined flatness value. Once obtained, subsequent processing is performed and the resulting individual dies are obtained with the desired flatness characteristic.

Abstract: A polishing apparatus capable of precisely controlling a polishing profile, particularly a polishing profile in an edge portion, of a wafer is disclosed. The polishing apparatus includes: a top ring shaft; a housing fixed to the top ring shaft; a flexible membrane configured to press a wafer against a polishing pad; a top ring body configured to hold the flexible membrane; a retaining ring coupled to the top ring body and disposed so as to surround the flexible membrane; a gimbal mechanism configured to allow the top ring body and the retaining ring to tilt with respect to the housing; and a local load exerting mechanism configured to exert a downward local load on a part of the retaining ring.

Abstract: In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

Abstract: According to an aspect of the present disclosure, a substrate polishing apparatus is provided. The substrate polishing apparatus includes a turntable for supporting a polishing pad, a dresser that dresses the polishing pad, a dresser drive module that presses the dresser against the polishing pad and rotates the dresser, a support member that supports the dresser drive module, and a plurality of force sensors which are provided between the dresser drive module and the support member and each of which outputs information related to each of forces in three axis directions.

Abstract: The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. The series of biased grooves separate a land area and have inner walls closer to the center and outer walls closer to the outer edge. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations polishes or planarizes the wafer with land areas wet by the overflowing polishing fluid.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad with a top surface, one or more apertures adapted to receive an endpoint detection window, an underside having a recessed portion and having one or more flanged endpoint detection windows (windows), each window having a flange adapted to fit snugly into the recessed portion of the underside of the polishing layer, the flange having a thickness slightly less than the depth of the recessed portion of the polishing layer (to allow for adhesive), having a detection area that fits snugly into an aperture in the polishing layer so that its top surface that lies substantially flush with the top surface of the polishing layer.

Abstract: A wafer carrier assembly includes a wafer carrier and a fluid passage. The wafer carrier comprises a retainer ring confining a wafer accommodation space. The fluid passage is inside the wafer carrier. The fluid passage includes an inlet and at least an outlet to dispense fluid into the wafer accommodation space.

Abstract: A polishing method is used for polishing a surface of a substrate such as a semiconductor wafer. The polishing method includes a polishing process for polishing a surface of the substrate in accordance with a preset polishing recipe, a pad cleaning process for removing foreign matters on the polishing pad by ejecting a cleaning fluid onto the polishing pad, and a substrate transferring process in which the polished substrate is removed from the top ring at a substrate transferring position, a subsequent substrate to be polished is loaded onto the top ring, and then the top ring holding the subsequent substrate to be polished is returned to the polishing table. The pad cleaning process is started after the completion of the polishing recipe is detected, and the pad cleaning process is terminated by detecting a position of the subsequent substrate to be polished which is undergoing the substrate transferring process.

Abstract: For use with a power trowel, an abrasive assembly attachable to a rotatable arm of the power trowel that comprises a circular, rigid plate having a central hub projecting out from a first major surface and affixed to its second major surface is a ring of a resilient material. Adjacent the resilient ring is a molded plastic ring in which a plurality of permanent magnet members are imbedded at regularly spaced intervals. The plastic ring further includes at least, one boss projecting outward from a surface thereof and designed to fit within an aperture disposed in an outermost ring, which is entirely or partially of a ferrous metal and which carries a plurality of abrasive members on its outer surface. The resilient ring is fastened to the rigid plate by internally threaded tubular pins and the plastic ring is secured by screws that pass through the plastic ring into the lumens of the internally threaded tubular pins.

Abstract: An apparatus which can polish an entirety of a surface of a substrate, such as a wafer, is disclosed. The apparatus includes a substrate holder configured to hold a substrate and rotate the substrate; and a polishing head configured to rub a polishing tool against a first surface of the substrate to polish the first surface. The substrate holder includes a plurality of rollers which can contact a periphery of the substrate. The plurality of rollers are rotatable about their respective own axes.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: A method of processing a reconstituted wafer that supports IC chips includes operably disposing the reconstituted wafer in a lithography tool that has a depth of focus and a focus plane and that defines exposure fields on the reconstituted wafer, wherein each exposure field includes at least one of the IC chips. The method also includes scanning the reconstituted wafer with a line scanner to measure a surface topography of the reconstituted wafer as defined by the IC chips. The method also includes, for each exposure field: i) adjusting a position and/or an orientation of the reconstituted wafer so that a photoresist layers of the IC chips within the given exposure field fall within the depth of focus; and ii) performing an exposure with the lithography tool to pattern the photoresist layers of the IC chips in the given exposure field.

Abstract: A chemical mechanical polishing pad includes a base portion and a polishing portion. The base portion has opposite first and second side surfaces. The polishing portion extends from the first side surface away from the second side surface, has a polishing surface facing away from the base portion, and has at least one trench formed in the polishing surface. Each of the trenches has an opening defined by the polishing surface. A horizontal width of the opening of each of the trenches is equal to or smaller than that of the remaining portion of the trench. The chemical mechanical polishing pad is made by laminating a plurality of polymer layers.

Abstract: A polishing pad is provided. The polishing pad includes a polishing layer and a detection window. The detection window is disposed in the polishing layer. The modulus of the detection window is larger than the modulus of the polishing layer at 30° C., and the modulus of the detection window is smaller than the modulus of the polishing layer at 50° C.

Abstract: Provided is a polishing pad capable of sufficiently reducing minute defects to be generated after polishing on a workpiece which are detected in measurement for a particle size of 26 nm or smaller and capable of providing the workpiece with excellent surface flatness. The polishing pad includes a polishing layer having a polishing surface to polish a workpiece, and includes, in the side opposite to the polishing surface of the polishing layer, an intermediate layer having an amount of deformation C larger than that of the polishing layer, a hard layer having an amount of deformation C smaller than that of the polishing layer, and a cushion layer having an amount of deformation C larger than that of the intermediate layer, in which each of the amounts of deformations C is defined as an amount of deformation in the case of compression in a thickness direction, and the intermediate layer, the hard layer, and the cushion layer are laminated in this order from the side of the polishing layer.