Abstract: A method and apparatus for providing a substantially uniform pressure to a polishing surface from a conditioning element is provided. The method includes urging a conditioning disk against a polishing surface of a rotating polishing pad, moving the conditioning disk across the polishing surface in a sweep pattern that includes at least a portion of the conditioning disk extending over a peripheral edge of the polishing surface, and maintaining a substantially uniform pressure to the polishing surface from the conditioning disk across the sweep pattern.

Abstract: A method for (a) determining the shear force between a wafer head and a polishing pad in a polishing tool using a CMP polishing tool with a plate above the wafer head which hangs or rests on the plate. The plate is connected to the CMP polishing tool by (b) low friction motion means (c). A load cell sensor is fixed to the framework of the polishing tool or another immovable structure. (d) The load cell determines the force from the leading edge of the plate when the wafer head is in contact with the polishing pad. (e) Signals from the load cell sensor reporting the shear force. A CMP polishing tool which includes elements corresponding to each of points (a)-(e) in the above method.

Abstract: Embodiments described herein generally relate to the planarization of substrates. In one embodiment, an apparatus for polishing a substrate is provided. The apparatus comprises a rotatable platen having a textured upper surface, at least one groove formed in the upper surface, and a pad disposed on the textured upper surface and bridging the at least one groove.

Abstract: A grinding machine (10) composed of a support table (12) for supporting an object (11) to be ground, a rotating shaft (13a) vertically arranged above the support table, and a grinding tool (40) connected to a lower end of the rotating shaft in parallel with the support table, in which the grinding tool is composed of a grind stone-holding member (32) on which a circular ultrasonic vibrators (31a, 31b) electrically connectable to an electric source are fixed and a circular grind stone (33) attached to a lower end of a periphery of the grind stone-holding member, in which the grind stone-holding member of the grinding tool has a continuous or discontinuous circular air space area (36) composed of multiple circular air space regions which are composed of circularly formed or arranged discontinuous air spaces between a position of the circular ultrasonic vibrator and a position at which the grind stone-holding member is connected to the rotating shaft, whereby the multiple circular air space area keeps an ultraso

Abstract: A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

Abstract: A method and apparatus for measuring the polishability of a solid material such as a dental restorative material includes using a series of apparatus to perform the steps of forming the material into a desired specimen with a generally planar surface, conditioning the surface by abrasion, measuring the abraded surface with a profile determination device, optionally measuring the amount of material abraded from the surface and the gloss of the abraded surface, polishing a portion of the abraded surface with a polishing device at a controlled load for a pre-determined time and measuring the roughness and/or gloss of the polished surface followed by comparison thereof to the corresponding measurements of the unpolished, conditioned portion of the specimen surface. Polishing materials and devices may also be tested using the apparatus and method for polishing a standardized material.

Abstract: Methods and apparatus for providing a chemical mechanical polishing pad. The pad includes a polishing layer having a top surface and a bottom surface. The pad includes an aperture having a first opening in the top surface and a second opening in the bottom surface. The top surface is a polishing surface. The pad includes a window that includes a first portion made of soft plastic and a crystalline or glass like second portion. The window is transparent to white light. The window is situated in the aperture so that the first portion plugs the aperture and the second portion is on a bottom side of the first portion, wherein the first portion acts a slurry-tight barrier.

Abstract: A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 ?m with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.

Abstract: A CMP polishing pad with an optical sensor assembly embedded in the pad, connected to a transceiver and/or power supply mounted at the center of the pad or at the outer edge of the pad which communicates wirelessly with a control system.

Abstract: An apparatus and method for polishing objects, such as semiconductor wafers, uses at least one object cleaner, which may be a movable object cleaner. The movable object cleaner allows access to different parts of the apparatus for maintenance.

Abstract: A chemical mechanical polisher comprises a polishing platen capable of supporting a polishing pad, and first and second substrate carriers that are each capable of holding a substrate against the polishing pad. First and second slurry dispensers, each comprise (i) an arm comprising a pivoting end and a distal end, (ii) at least one slurry dispensing nozzle on the distal end, and (iii) a dispenser drive capable of rotating the arm about the pivoting end to swing the slurry dispensing nozzle at the distal end to dispense slurry across the polishing platen.

Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer using a polishing apparatus includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit. The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table in the first polishing step.

Abstract: A polishing pad, platen, method of monitoring, method of manufacturing, and method of detecting using a pseudo window area, where the pseudo window area has a thickness less than a thickness of a polishing layer and a thickness greater than zero.

Abstract: A polishing apparatus includes a polishing pad for polishing a wafer and a polishing head for holding the wafer. The polishing head includes a retainer ring, a membrane sheet, and a head body. The retainer ring retains the wafer in a horizontal direction. The membrane sheet depresses the wafer to the polishing pad. The head body supports the retainer ring and the membrane sheet. The retainer ring includes a fixed retainer ring and a released retainer ring. The released retainer ring is interposed between the inner periphery of the fixed retainer ring and the periphery of the wafer to retain the wafer in the horizontal direction.

Abstract: A double side grinder comprises a pair of grinding wheels and a pair of hydrostatic pads operable to hold a flat workpiece (e.g., semiconductor wafer) so that part of the workpiece is positioned between the grinding wheels and part of the workpiece is positioned between the hydrostatic pads. At least one sensor measures a distance between the workpiece and the respective sensor for assessing nanotopology of the workpiece. In a method of the invention, a distance to the workpiece is measured during grinding and used to assess nanotopology of the workpiece. For instance, a finite element structural analysis of the workpiece can be performed using sensor data to derive at least one boundary condition. The nanotopology assessment can begin before the workpiece is removed from the grinder, providing rapid nanotopology feedback. A spatial filter can be used to predict the likely nanotopology of the workpiece after further processing.

Abstract: An interlayer insulating film is formed on a semiconductor substrate having a semiconductor element formed thereon. At this time, there are protrusions higher than surroundings thereof and non-protruding portions lower than the protrusions on the surface of the interlayer insulating film. First, a first polishing process is carried out on the surface of the interlayer insulating film with use of a first abrasive having non-Prestonian properties produced by mixing abrasive materials including abrasive grains, a polymer additive and water at a predetermined first mixture ratio. Then, after the first abrasive process shifts to an automatically stopping state, a second polishing process is carried out on the surface of the interlayer insulating film with use of a second abrasive having the concentration of polymer additive lower than that of the first abrasive and produced by mixing the abrasive materials at a second mixture ratio different from the first mixture ratio.

Abstract: A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

Abstract: A polishing method can reduce the waiting time of a substrate after polishing, standing by for measurement of a thickness of a polishing film, thereby increasing the throughput of an entire apparatus, and which can securely perform feedback control.

Abstract: The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate.

Abstract: A polishing pad and a CMP apparatus are provided. The polishing pad includes a plurality of patterns formed of trenches having a predetermined size and may include a groove for slurry flow. The plurality of patterns can include herringbone shaped trenches in concentric rows, where the rows of herringbone shaped trenches alternate in direction.

Abstract: The present invention generally relates to a polishing system. Particularly, the present invention relates a polishing apparatus having one or more modular polishing stations, and a plurality of polishing heads movably connected to a transferring system.

Abstract: Provided are a substrate supporting unit and a single type substrate polishing apparatus using the substrate supporting unit. During a polishing process, the bottom surface of a substrate is attached to the substrate supporting unit by vacuum suction, and during a post-cleaning process, the substrate is supported by the substrate supporting unit at a position spaced apart from the substrate supporting unit for cleaning the bottom surface of the substrate. Therefore, according to the substrate supporting unit and the substrate polishing apparatus using the substrate supporting unit, in a state where the substrate is supported by the single type substrate supporting unit, a process for polishing the top surface of the substrate and a post-process for cleaning the top and bottom surfaces of the substrate can be sequentially performed.

Abstract: The present invention provides a polishing pad with a pressure sensor and the polishing apparatus thereof. The polishing pad is used in the polishing process of semiconductor and other work piece, which includes at least one substrate, at least one pressure sensor and at least one signal transmitting module. The substrate has a polishing face, a bottom face opposite to the polishing face, and at least one cavity set on the bottom face of the substrate. The pressure sensor is set in the cavity and configured for providing a pressure signal. The signal transmitting module is set on the polishing pad and configured for transmitting a pressure signal. The pressure signal is a loading pressure value and/or loading pressure distribution on the polishing pad with a preset range. Thus, with the pressure signal, the polishing apparatus prevents the concerned work piece from being over polished to further improve polishing quality and yield.

Abstract: Described herein are polishing apparatus, polishing formulations, and polymeric substrates for use in polishing surfaces, and related methods. The apparatus, formulations, substrates, and methods may each be used in applications involving the polishing of metal and/or metal-containing surfaces such as semiconductor wafers. The apparatus, formulations, polymeric substrates, and related methods described herein may be used without abrasives, and in some instances, without mechanical friction of a pad surface against the surface to be polished. Therefore, defects on a polished surface due to such mechanical polishing processes may be reduced.

Abstract: An object of the present invention is to provide a polishing method and a polishing apparatus that can secure an even polished shape and can remove slurry that has contributed to polishing and contains polishing by-product to the outside of a pad efficiently to reduce scratches due to the polishing by-product, and can suppress consumption of slurry to the minimum to realize cost reduction during running for mass production.

Abstract: Provided are a single type substrate treating apparatus and method. A polishing unit is disposed in a process chamber for polishing a substrate chemically and mechanically, and a cleaning unit is disposed in the same process chamber for cleaning the substrate. Therefore, according to the single substrate treating apparatus and method, a polishing process and a cleaning process can be performed on a substrate in the same process chamber by a single substrate treating method in which substrates are treated one by one.

Abstract: A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers by rotating the wafers between a pair of upper and lower rotating surface plates in a state where the wafers are held on a carrier so that centers of the wafers are positioned on a circumference of a single circle, wherein a ratio of an area of a circle passing through the centers of the wafers to an area of one of the wafers is greater than or equal to 1.33 but less than 2.0; surfaces of the fixed abrasive grains comprised in the surface plates are comprised of pellets disposed in a grid-like fashion, with the pellets provided in a center portion and pellets provided in a peripheral portion being larger in size than the pellets provided in an intermediate portion.

Abstract: An improvement in a polishing apparatus for planarizing substrates comprises a tenacious coating of a low-adhesion material to the platen surface. An expendable polishing pad is adhesively attached to the low-adhesion material, and may be removed for periodic replacement at much reduced expenditure of force. Polishing pads joined to low-adhesion materials such as polytetrafluoroethylene (PTFE) by conventional adhesives resist distortion during polishing but are readily removed for replacement.

Abstract: The present invention intends to provide an optical disk restoration apparatus that is simple structured and small sized to reduce the production cost, and that can evenly apply a substantially uniform pressing force. This object can be achieved by an optical disk restoration apparatus, including a turntable 41 on which an optical disk 10 is set via a non-slip sheet 45, a polishing body holder 47 for holding a polishing body 46, a pressing mechanism for pressing the polishing body 46 and the optical disk 10 onto each other with a predetermined pressure required for the polishing process, and a motor 48 for rotating at least the polishing holder 47 and the polishing body 46 to polish the surface of the optical disk 10, where the surface of the turntable 41 and/or the sheet 45 is provided with at least one of an inclined, step-like or curved profile.

Abstract: The present invention is a polishing head provided with an annular rigid ring, a rubber film bonded to the rigid ring with a uniform tension, a mid plate joined to the rigid ring and forming a space portion together with the rubber film and the rigid ring, and an annular template provided concentrically with the rigid ring in a peripheral portion on a lower face part of the rubber film and having an outer diameter larger than an inner diameter of the rigid ring, in which a pressure of the space portion can be changed by a pressure adjustment mechanism, a back face of a work is held on the lower face part of the rubber film, and a surface of the work is brought into sliding contact with the polishing pad attached onto a turn table for performing polishing, and an inner diameter of the template is smaller than an inner diameter of the rigid ring, and a ratio between an inner diameter difference between the rigid ring and the template and a difference between the inner diameter and an outer diameter of the templ

Abstract: Embodiments of a system and method for polishing substrates are provided. In one embodiment, a polishing system is provided that includes a polishing module, a cleaner and a robot. The robot has a range of motion sufficient to transfer substrates between the polishing module and cleaner. The polishing module includes at least two polishing stations, at least one load cup and at least four polishing heads. The polishing heads are configured to move independently between the at least two polishing stations and the at least one load cup.

Abstract: The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnected unit cells (225). The interconnected unit cells (225) are reticulated for allowing fluid flow and removal of polishing debris. A plurality of polishing elements (208) form the three-dimensional network of interconnected unit cells (225). The polishing elements (208) have a mean height (214) to a mean width (222) ratio of at least 3. The polishing surface (200) formed from the plurality of polishing elements (208) remains consistent for multiple polishing operations.

Abstract: A double side grinder comprises a pair of grinding wheels and a pair of hydrostatic pads operable to hold a flat workpiece (e.g., semiconductor wafer) so that part of the workpiece is positioned between the grinding wheels and part of the workpiece is positioned between the hydrostatic pads. At least one sensor measures a distance between the workpiece and the respective sensor for assessing nanotopology of the workpiece. In a method of the invention, a distance to the workpiece is measured during grinding and used to assess nanotopology of the workpiece. For instance, a finite element structural analysis of the workpiece can be performed using sensor data to derive at least one boundary condition. The nanotopology assessment can begin before the workpiece is removed from the grinder, providing rapid nanotopology feedback. A spatial filter can be used to predict the likely nanotopology of the workpiece after further processing.

Abstract: A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.

Abstract: A wafer processing method is provided comprising the steps of: holding a wafer (20) having devices formed on its front surface (21) so that a back surface (22) of the wafer is exposed; grinding the back surface of the wafer to form a brittle fracture layer (Z) on the back surface; and polishing the back surface of the wafer entirely so that the brittle fracture layer remains partially. It is possible to improve the strength of the wafer and reduce its surface roughness while allowing utilization of a gettering effect. It is also preferable to remove only an outermost layer of the back surface of the wafer. Further, it is preferable that the wafer is polished by at least one of wet polishing, dry polishing, wet etching and dry etching.

Abstract: The present invention provides a polishing platen which does not require a large force for removing a polishing pad from an upper surface of the polishing platen and can thus make it relatively easy to remove the polishing pad therefrom. The present invention also provides a polishing apparatus having such polishing platen. The polishing platen (12) according to the present invention includes a surface to which a polishing pad is attached. The surface of the polishing platen (12) includes a combination of a first surface (20) and a second surface (21) having a surface roughness which is different from that of the first surface (20).

Abstract: A method of planarizing a semiconductor structure comprises moving a conditioning element on a surface of a polishing member, rotating the semiconductor structure relative to the polishing member against the surface of the polishing member, and rinsing the surface of the polishing member and the semiconductor structure. While the conditioning element is moved over the surface of the polishing member and the semiconductor structure is rotated against the surface of the polishing member, slurry is directed onto the polishing member. The step of rinsing comprises contacting the conditioning element to the surface of the polishing member.

Abstract: An apparatus and method for polishing objects, such as semiconductor wafers, utilizes one or more polishing surfaces, multiple wafer carriers and at least one load-and-unload cup. The load-and-unload cup may be configured to move to and from the wafer carriers in a pivoting manner. The load-and-unload cup may be configured to move to and from the wafer carriers in a linear reciprocating manner. The wafer carriers may be configured to move to and from the load-and-unload cup in a pivoting manner. The wafer carriers may be configured to move to and from the load-and-unload cup in a linear reciprocating manner.

Abstract: A wafer grinding and tape attaching apparatus and method, the method includes providing a wafer to a chuck table, grinding a back side of the wafer, providing a wafer ring having dicing tape and attaching the dicing tape to the back side of the ground wafer.

Abstract: An apparatus for manufacturing a liquid crystal display (LCD) device includes a table receiving an LCD panel thereon, a first grinding part grinding a surface of the LCD panel to a first surface roughness, a second grinding part grinding the surface of the LCD panel grinded to the first surface roughness to a second surface roughness, wherein the second surface roughness is smoother than the first surface roughness, and a polishing part polishing the surface of the LCD panel which is grinded to the second surface roughness.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Abstract: A polishing apparatus can detect escape of a substrate from a top ring during polishing. The polishing apparatus including: a polishing table (10) having a polishing pad (11); a top ring (21); and a substrate escape detection section for detecting escape of the substrate from the top ring, including a light irradiation member (26) for irradiating an area of the upper surface of the polishing pad with light, a controller (32) for controlling the light irradiation of the light irradiation member, an image-taking member (27) for taking an image of the area irradiated with the light, and an information processing member (31) for processing information outputted from the image-taking member, wherein said controller controls the light irradiation member in such a manner that it performs light irradiation at least for a period of time during which the substrate is regarded as being in contact with the polishing pad.

Abstract: A polishing apparatus and a pad replacing method thereof are provided. The polishing apparatus includes a first clamping element, a second clamping element and a polishing head. The first clamping element includes a first upper clamper and a first lower clamper for clamping a first area of a first polishing pad. The second clamping element includes a second upper clamper and a second lower clamper for clamping a second area of the first polishing pad, the first area and the second area are opposite to each other. When the first polishing pad will be disconnected from the bottom surface of the polishing head and replaced by a second polishing pad, the first clamping element and the second clamping element are released from the first polishing pad.

Abstract: A polishing method, a polishing pad, and a polishing system are described. The polishing pad with a plurality of grooves is provided. The width of each groove is W and the pitch between two adjacent grooves is P. An oscillatory movement distance of a workpiece on the polishing pad is set. The oscillatory movement distance enables any particular point on the workpiece to cross the same number of grooves, when a direction between the particular point and the center of the workpiece is perpendicular to a tangential direction of the grooves. The workpiece is then polished with the oscillatory movement distance, so as to achieve a better polishing uniformity for the surface of the workpiece.

Abstract: A method of operating a substrate processing apparatus, upon the occurrence of a nonfatal failure in the apparatus, makes it possible to continue part of the apparatus operations for substrates to clean and recover a substrate or to easily discharge a substrate from the apparatus, without stopping an entire apparatus, thereby reducing the risk of a substrate becoming unprocessable. The method of operating a substrate processing apparatus having a polishing section, a cleaning section and a transferring mechanism, includes: classifying substrates, upon detection of a malfunction in any of the polishing section, the cleaning section and the transferring mechanism, according to the site of the malfunction and to the positions of the substrates in the substrate processing apparatus; and carrying out an operation for each of the substrates after the detection of the malfunction, the operation varying depending on the classification of the substrate.

Abstract: Semiconductor wafers have a front surface, a back surface, a notch, and an edge. A method of polishing a wafer includes polishing at least one of the surfaces and the notch of the wafer using a polishing pad and slurry. At least one surface of the wafer is cleaned of residual slurry. The cleaned surface is grasped by applying a vacuum to the cleaned surface of the wafer using a vacuum chuck. Edge of the wafer is polished using a pad and slurry while the wafer is grasped by the vacuum chuck.

Abstract: A wafer polishing method, in which the outer circumferential edge of a polishing member is first cut by a cutting tool fixed to a table base, thereby forming the polishing member into a completely round shape and also positioning the polishing member in a Y direction at a Y-directional reference position of the table base. Thereafter, a polishing unit is once lifted in the condition where the table base remains still at the reference position. Thereafter, the table base is horizontally moved toward a column in the Y direction to thereby position the polishing member in the Y direction so that only a peripheral portion of the wafer is polished by the polishing member. At this time, the horizontal travel of the table base is preliminarily obtained from the Y-directional positional relation between the cutting tool and the wafer held on a chuck table and from the width of the peripheral portion to be polished.

Abstract: Disclosed is an apparatus for polishing media discs by removing or reducing scratches or substances from the surface of damaged discs, including computer data CDs, DVDs, gaming discs and other media discs. The apparatus enables removal or reduction of scratches and materials that prevent the information or data contained on the disc from being read by a conventional disc reading device. The polishing pressure and time are uniformly controlled at predetermined and precision levels sufficient to remove or reduce scratches from the surface of the disc. Also disclosed is a method of removing or reducing scratches from the surface of media discs by using the apparatus of the present invention. The method can be repeated as many times as necessary or desired in order to obtain a finely polished disc from which data is obtainable by conventional disc reading devices.

Abstract: Systems and methods for dynamic slurry blending and control are described. A method comprises applying a slurry to a wafer during a polishing process, detecting a wafer property during the polishing process, and changing a slurry property during the polishing process based, at least in part, upon the detected wafer property. In another embodiment, a system comprises a slurry mixer, a polisher coupled to the slurry mixer via a slurry feeder, the polisher being configured to receive a slurry from the slurry mixer via the slurry feeder and to apply the slurry to a wafer during a polishing process, and a computer coupled to the slurry mixer and to the polisher, the computer being configured to receive a signal indicative of a detected wafer property and to control the slurry mixer to change a slurry property during the polishing process based, at least in part, upon the detected wafer property.