Abstract: In a method for polishing a semiconductor wafer by rotating a work carrier and a table while pressing the semiconductor wafer retained by the work carrier against a polishing cloth mounted on the table, at a time when the table and the work carrier both having been at rest are rotated, each at a predetermined number of revolutions, in a condition that the polishing cloth and the semiconductor wafer are pressed against each other, to thereby start polishing, a table acceleration is maintained smaller than a work carrier acceleration. By such maintaining the table acceleration smaller than the work carrier acceleration, vibrations to be generated when the polishing is started can be prevented. In the method for polishing a semiconductor wafer according to the present invention, the diameter of the semiconductor wafer is preferably defined to be 30% or more of the diameter of the table.

Abstract: A polishing system for polishing a semiconductor wafer includes a wafer support for holding the semiconductor wafer, and a first polishing pad for polishing a region of the semiconductor wafer. The semiconductor wafer has a first diameter, and the first polishing pad has a second diameter shorter than the first diameter.

Abstract: According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.

Abstract: A method and apparatus for releasbly attaching flexible abrasive disks to a flat-surfaced platen that floats in three-point abrading contact with three rigid equal-height flat-surfaced rotable fixed-position workpiece spindles that are mounted on a precision-flat abrading machine base where the spindle surfaces are in a common plane that is co-planar with the base surface. The three spindles are positioned to form a triangle of platen supports where the rotational-centers of each of the spindles are positioned at the center of the annular width of the platen abrading surface. Flat surfaced workpieces are attached to the spindles and the rotating floating-platen abrasive surface contacts all three rotating workpieces to perform single-sided abrading. The platen abrasive can be re-reflattened by attaching equal-thickness abrasive disks to the three spindles that are rotated while in abrading contact with the rotating platen abrasive. There is no wear of the abrasive-disk protected platen surface.

Abstract: A wafer carrier adapted to further reduce the edge effect and allow a wafer to be uniformly polished across its entire surface, with a retaining ring made from very hard materials such as PEEK, PET or polycarbonate with a hardness in the range of 80 to 85 Shore D, while the inner surface or insert is made of polyurethane or other material with a hardness in the range of 85 to 95 Shore A.

Abstract: The present invention comprises of a process for lapping a high-throughput of ultra-flat wafers by utilizing a lapping apparatus containing a rotary flat, grooved polishing platen, at least two rotating pressurized heads each having a polishing wafer carrier that is adapted to receive a plurality of mounted wafers, and a plurality of concentric conditioning rings surrounding each pressurized head. The rotating pressurized heads are counterbalanced throughout the inventive process, and the lapping platen is continuously conditioned by simultaneously rotating the concentric conditioning rings over the lapping platen. This process allows continuous and controllable planarization thus allowing for a high throughput of wafers, while at the same time it prevents distortions in the lapping platen which reduces maintenance by providing continuous conditioning of the lapping platen.

Abstract: A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.

Abstract: Flat-surfaced workpieces such as semiconductor wafers are attached to a rotatable floating workpiece holder carrier rotor that is supported by and rotationally driven by a bellows. The rotating wafer carrier rotor is restrained by a set of idlers that are attached to a stationary housing to provide rigid support against abrading forces. The idlers allow low-friction operation of the abrading system to be provided at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. The carrier rotor is also restrained by a rigid rotating housing to allow a limited lateral motion and also a limited angular motion. Air pressure within a sealed bellows chamber provides controlled abrading pressure for wafers or other workpieces. Vacuum can also be applied to the bellows chamber to quickly move the wafer away from the abrading surface. Wafers can be quickly attached to the workpiece carrier with vacuum.

Abstract: Flat-surfaced workpieces such as semiconductor wafers are attached to a rotatable floating workpiece holder carrier rotor that is supported by and rotationally driven by a bellows. The wafer carrier rotor is contained by a set of idlers that are attached to a stationary rotor housing to provide support against abrading forces that are imposed on the wafer by the moving abrasive coating on a rotary platen. The idlers allow low-friction operation of the abrading system to be provided at the very high abrading speeds used in high speed flat lapping with raised-island abrasive disks. The system is also well suited for lapping optical devices and rotary seals and for chemical mechanical planarization (CMP) polishing of wafers using resilient pads. Pressurized air is injected into the bellows device to provide uniform abrading pressure across the full surface of the wafer. Wafers can be attached to the workpiece carrier with vacuum.

Abstract: To provide a polishing apparatus capable of more accurately determining a polishing end point. The polishing apparatus includes a turntable 12, a first electric motor 14 configured to rotationally drive the turntable, a top ring 20 configured to hold a workpiece together with the turntable, and a second electric motor 22 configured to rotationally drive the top ring. The polishing apparatus further includes a weighting unit configured to perform weighting so as to make the current ratios of the respective phases different from each other, and a torque variation detecting unit configured to detect a change in a phase current greatly weighted by the weighting unit and thereby detects a change in torque of the electric motor, the change being generated by performing the polishing.

Abstract: An apparatus and a method for forming or polishing a concave or convex radius surface on a work-piece is described herein. The apparatus includes a carrier that is configured to support a work-piece. A substantially hollow rotatable tool, which includes a circumferential surface for either forming or polishing the radius surface, is positioned adjacent the carrier. An axis of rotation of the tool is oriented at an oblique angle with respect to a longitudinal axis of the work-piece and a longitudinal axis of the carrier. Alternatively, the longitudinal axis of the work-piece may be laterally offset from the longitudinal axis of the carrier. The apparatus further includes provisions for rotating the hollow rotatable tool for forming or polishing a radius surface on the surface of the work-piece.

Abstract: A method for manufacturing a semiconductor device includes the step of polishing a conductive film formed over a semiconductor substrate. The conductive film is formed by a barrier film that is in contact with second and third interlayer insulating films, and a copper film that is in contact with the barrier film. A polishing surface of a second polishing pad for polishing and removing the barrier film and the third interlayer insulating film has a lower pore area ratio than a polishing surface of a first polishing pad for polishing and removing the copper film.

Abstract: A seasoning plate is placed on a polishing pad and performs seasoning of the polishing pad by abrading the polishing pad through the friction caused by rotation of the polishing pad. The seasoning plate includes: conditioners that abrade the polishing pad; a round flexible substrate that has the conditioners attached to the lower face thereof; an O-ring that is placed on the upper face of the flexible substrate, the O-ring forming a circle concentric with the flexible substrate; and a weight plate serving as a weight portion that is placed on the O-ring and applies weight for deforming the flexible substrate.

Abstract: Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: Embodiments of the present invention relate to apparatus and method for improve uniformity of a polishing process. Embodiments of the present invention provide a heating mechanism configured to apply thermal energy to a perimeter of a substrate during polishing, or a cooling mechanism configured to cool a central region of the substrate during polishing, or a biased heating mechanism configured to create a temperature step differential on a given radius of a polishing pad.

Abstract: A polishing pad is described that has a polishing layer with a polishing surface, an adhesive layer on a side of the polishing layer opposite the polishing layer, and a solid light-transmitting window extending through and molded to the polishing layer. The window has a top surface coplanar with the polishing surface and a bottom surface coplanar with a lower surface of the adhesive layer. A method of making a polishing pad includes forming an aperture through a polishing layer and an adhesive layer, securing a backing piece to the adhesive layer on a side opposite a polishing surface of the polishing layer, dispensing a liquid polymer into the aperture, and curing the liquid polymer to form a window.

Abstract: An improved retaining ring used for chemical mechanical polishing of substrates, such as semiconductor wafers, to hold a substrate in place during the polishing process. The retaining rings are configured with inserts through which fasteners are positioned to securely affix the retaining ring to the polishing head. The inserts assist in dissipating the force of the fasteners, thereby allowing a more uniform polishing surface. The opening through which the fastener is positioned may be configured with concave or convex side walls to assist in dissipating the force of the fasteners during installation of the retaining ring or the polishing process.

Abstract: Processing pads for mechanical and/or chemical-mechanical planarization or polishing of substrates in the fabrication of microelectronic devices, methods for making the pads, and methods, apparatus, and systems that utilize and incorporate the processing pads are provided. The processing pads include grooves or other openings in the abrading surface containing a solid or partially solid fill material that can be selectively removed as desired to maintain the fill at an about constant or set distance from the abrading surface of the pad and an about constant depth of the pad openings for multiple processing and conditioning applications over the life of the pad.

Abstract: A wafer polishing apparatus includes a rotatable turntable for holding a polishing pad and at least one rotatable polishing head adapted for attachment of at least one wafer alignment assembly. A wafer alignment assembly includes an upper plate and a lower plate connected by three lever assemblies symmetrically positioned about a wafer alignment assembly axis of rotation. Each of the lever assemblies comprises a spherical joint, an elongated cylindrical hinge, and a kinematic axis which intersects a center of rotation for the spherical hinge, an axis of rotation for the elongated cylindrical hinge, and a gimbal point about which a wafer may tilt during polishing. The gimbal point may be positioned above, coincident with, or below a working surface of a polishing pad by adjustment of the lever assemblies. Some embodiments of the invention comprise steps in a method for polishing a wafer in a wafer polishing apparatus.

Abstract: A polishing apparatus includes a platen to hold a polishing pad having a plurality of optical apertures, a carrier head to hold a substrate against the polishing pad, a motor to generate relative motion between the carrier head and the platen, and an optical monitoring system. The optical monitoring system includes at least one light source, a common detector, and an optical assembly configured to direct light from the at least one light source to each of a plurality of separated positions in the platen, to direct light from each position of the plurality of separated positions to the substrate as the substrate passes over said each position, to receive reflected light from the substrate as the substrate passes over said each position, and to direct the reflected light from each of the plurality of separated positions to the common detector.

Abstract: An improved retaining ring used for chemical mechanical polishing of substrates, such as semiconductor wafers, to hold a substrate in place during the polishing process. The retaining rings are configured with inserts through which fasteners are positioned to securely affix the retaining ring to the polishing head. The inserts assist in dissipating the force of the fasteners, thereby allowing a more uniform polishing surface. The opening through which the fastener is positioned may be configured with concave or convex side walls to assist in dissipating the force of the fasteners during installation of the retaining ring or the polishing process.

Abstract: A polishing pad, a polishing method and a method of forming a polishing pad are provided. The polishing pad includes a polishing layer and a plurality of arc grooves. The arc grooves are disposed in the polishing layer. Each of the arc grooves has two ends, and at least one end thereof has an inclined wall. The angle between the inclined wall of each groove and the surface plane of the polishing layer is less than 90 degree.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: A method and apparatus for quickly moving workpieces from having abrading contact with abrasive-surfaced rotatable platens using a dynamic-action workholder apparatus frame moving device that is activated by a sensor. Flat-surfaced workpieces are attached to flat-surfaced workholders to abrade one surface of the workpieces by abrasive coated platens. The force moving device can be a spring, an air cylinder, a screw-jack, an electric solenoid or a piezo-electric device. The sensor can be a vibration, shock, motion, force or sound sensor that can to sense abrading process events that could make it desirable to quickly activate moving of the workpieces away from the abrasive disk. The workpiece abrading event can be quickly interrupted by use of this device to avoid damage to workpieces, the abrasive disks or the platen or to quickly change an abrading process. After the workpieces are moved they can be returned to their original abrading position.

Abstract: A template for polishing Silicon Carbide, Sapphire, Germanium, Silicon and pattern wafers having a slurry inlet, channels, outlets and pockets for holding said wafers terminating in peripheral vacuum ports in order to facilitate an efficient flow of slurry over the semiconductor wafers during a polishing process.

Abstract: The present invention generally relates to a polishing system. Particularly, the present invention relates a polishing apparatus having one or more modular polishing stations, and a plurality of polishing heads movably connected to a transferring system.

Abstract: Semiconductor wafers are polished by a material-removing polishing process A, on both sides of the wafer, using an abrasive-free polishing pad, and a polishing agent which contains abrasive; and a material-removing polishing process B, on at least one side of the wafer, using a polishing pad with a microstructured surface containing no materials which contact the wafer which are harder than the semiconductor material, and a polishing agent is added which has a pH? to 10 and contains no substances with abrasive action. Preferred is a method for producing a semiconductor wafer, comprising the following ordered steps: separating a semiconductor single crystal into wafers; simultaneously processing both sides of the wafer by chip-removing processing; polishing the wafer, comprising a polishing process A and a polishing process B; and CMP of one side of the wafer, removing <1 ?m.

Abstract: A polishing method, a polishing pad and a polishing system are provided. In the invention, the polishing pad is used to polish a polishing article. The polishing pad includes a polishing layer and a surface pattern disposed in the polishing layer. The polishing layer includes a polishing surface, a rotating central region, and a peripheral region. The surface pattern includes many grooves distributed from near the rotating central region and extending outward to near the peripheral region. The grooves include many groove cross sections along a circumferential direction of a same radius. Each of the groove cross sections has a left sidewall and a right sidewall. An included angle is formed by the polishing surface and one of a group of the left sidewalls and a group of the right sidewalls. The included angle is an obtuse angle.

Abstract: According to one embodiment, a semiconductor device manufacturing method is provided. In the semiconductor device manufacturing method, a process target film is formed on a semiconductor substrate, and the surface of the process target film is polished by a CMP method. The CMP method comprises heating a rotating polishing pad from a first temperature to a second temperature higher than the first temperature, and bringing the surface of the process target film into contact with the polishing pad heated to the second temperature.

Abstract: An optical disc polishing device includes a housing in which a disc turntable assembly is arranged for carrying an optical disc on a rotation surface thereof. The housing includes a cover that carries a polishing assembly. The cover forms a slot serving as a track extending in a radial direction of the optical disc. The polishing assembly includes a positioning member, a polishing wheel, and a locking knob. A threaded section is provided on the positioning member and the polishing wheel is coupled to the positioning member to be opposite to the threaded section. The threaded section is set through the track slot to threadingly engage the locking knob in a releasable and re-tightenable manner so as to allow for position adjustment of the polishing assembly with respect to the track slot. The polishing assembly can thus be positionable to oppose a scratch formed on the disc.

Abstract: A planarization apparatus and method that thins and planarizes a substrate by grinding and polishing the rear surface of the substrate with high throughput, and that fabricates a semiconductor substrate with reduced adhered contaminants. A planarization apparatus that houses various mechanism elements in semiconductor substrate loading/unloading stage chamber, a rear-surface polishing stage chamber, and a rear-surface grinding stage chamber. The throughput time of the rear-surface polishing stage that simultaneously polishes two substrates is typically about double the throughput time of the rear-surface grinding stage that grinds one substrate.

Abstract: A slurry supply system with multiple supply modules and a flushing module concurrently coupled to the multiple supply modules is provided. Each supply module includes a slurry reservoir and at least one delivery line connecting to the slurry reservoir, wherein each delivery line is oriented toward a chemical mechanical polishing apparatus. The flushing module includes a flushing liquid reservoir and multiple flushing lines connecting to the flushing liquid reservoir, wherein each flushing line is coupled to each delivery line thereby the flush module can selectively flush one of the delivery lines.

Abstract: A polishing apparatus can perform more precise control of a polishing profile without carrying out many polishing tests in advance. The polishing apparatus includes: a polishing table 22 having a polishing surface 52a; a top ring 24 for holding a polishing object W and pressing the polishing object W against the polishing surface 52a; a polishing liquid supply nozzle 26 for supplying a polishing liquid to the polishing surface 52a; a movement mechanism 70 for moving a polishing liquid supply position 26a of the polishing liquid supply nozzle 26 approximately along the radial direction of the polishing surface 52a; a controller 66 for controlling the movement mechanism 70; and a simulator 72 for predicting the relationship between the polishing liquid supply position 26a of the polishing liquid supply nozzle 26 and a polishing profile, performing a simulation and outputting data to the controller 66.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.

Abstract: Systems and methods for performing one or more measurements of a substrate at one or more radii along the substrate are described. Thickness measurements taken at various radii along the substrate can be averaged together to obtain an average value that reflects an overall substrate thickness. A more accurate measurement of the overall substrate thickness can be obtained by performing multiple measurements and averaging the measurements together. Using the average value, polishing can be adjusted to ensure that the substrate achieves a desired planarized thickness profile.

Abstract: A method and apparatus for using continuous-loop wires to drive circular flat-surfaced disk-type workholders which are positioned between two opposed upper and lower abrasive-surfaced rotatable platens. Flat-surfaced workpieces are mounted in receptacle openings in the workholders where both surfaces of the workpieces are simultaneously abraded by the two opposed platen that have annular bands of abrasive coatings. The drive wires allow the workholders to be driven at high speeds because of the smooth-action interface between the wires and the circular workholder disks that have circular wire grooves around the peripheries of the workholders. Each workholder assembly consists of a workholder disk, a drive wire, wire idlers, workholder idlers, a wire-tension device, a workholder disk support device and a wire drive motor. The workholder assemblies can be moved away from the platen surface to change platen abrasive disks. Three workholders provide stable three-point support of a floating upper platen.

Abstract: A chemical mechanical polishing apparatus includes a container, a platen, first and second brushes, a polishing pad, a carrier, and a slurry supplier. The container has a bottom wall and a side wall. The side wall has an inwardly-extending upper portion. The platen is supported over the bottom wall. The platen is positioned lower than the inwardly-extending upper portion. The first brush brushes the side wall. The first brush is fixed to a side surface of the platen. The second brush brushes a side surface of the platen. The second brush is fixed to the bottom wall. The polishing pad is attached to the platen. The carrier presses a workpiece to be polished against the polishing pad. The slurry supplier supplies a slurry onto the polishing pad.

Abstract: Embodiments of a system and method for polishing substrates are provided. In one embodiment, a polishing system is provided that includes a polishing module, a cleaner and a robot. The robot has a range of motion sufficient to transfer substrates between the polishing module and cleaner. The polishing module includes at least two polishing stations, at least one load cup and at least four polishing heads. The polishing heads are configured to move independently between the at least two polishing stations and the at least one load cup.

Abstract: Provided are a single type substrate treating apparatus and method. A polishing unit is disposed in a process chamber for polishing a substrate chemically and mechanically, and a cleaning unit is disposed in the same process chamber for cleaning the substrate. Therefore, according to the single substrate treating apparatus and method, a polishing process and a cleaning process can be performed on a substrate in the same process chamber by a single substrate treating method in which substrates are treated one by one.

Abstract: A chemical mechanical polishing method and apparatus provides a deformable, telescoping slurry dispenser arm coupled to a dispenser head that may be arcuate in shape and may also be a bendable telescoping member that can be adjusted to vary the number of slurry dispenser ports and the degree of curvature of the dispenser head. The dispenser arm may additionally include slurry dispenser ports therein. The dispenser arm may advantageously be formed of a plurality of nested tubes that are slidable with respect to one another. The adjustable dispenser arm may pivot about a pivot point and can be variously positioned to accommodate different sized polishing pads used to polish substrates of different dimensions and the bendable, telescoping slurry dispenser arm and dispenser head provide uniform slurry distribution to any of various wafer polishing locations, effective slurry usage and uniform polishing profiles in each case.

Abstract: A wafer polishing apparatus includes a rotatable turntable for holding a polishing pad and at least one rotatable polishing head adapted for attachment of at least one wafer alignment assembly. A wafer alignment assembly includes an upper plate and a lower plate connected by three lever assemblies symmetrically positioned about a wafer alignment assembly axis of rotation. Each of the lever assemblies comprises a spherical joint, an elongated cylindrical hinge, and a kinematic axis which intersects a center of rotation for the spherical hinge, an axis of rotation for the elongated cylindrical hinge, and a gimbal point about which a wafer may tilt during polishing. The gimbal point may be positioned above, coincident with, or below a working surface of a polishing pad by adjustment of the lever assemblies. Some embodiments of the invention comprise steps in a method for polishing a wafer in a wafer polishing apparatus.

Abstract: A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position.

Abstract: A mechanical polishing apparatus includes a polishing pad, at least one carrier head positioned over and off center relative to the polishing pad and configured for holding at least one substrate against the polishing pad within a first annular region of the polishing pad when the polishing pad is rotating. At least one conditioning head is positionable over and off center relative the polishing pad at a plurality of first positions and configured for applying a contacting surface of at least one conditioning pad against the polishing pad when the polishing pad is rotating, where the conditioning pad is applied to a second annular region of the polishing pad and moves between the plurality of first positions. In the apparatus, the diameter of the conditioning pad?a difference between a radius of the polishing pad and a width of the first annular region.

Abstract: In a polishing process, the characteristics of the removal process may be monitored at different lateral positions to identify the clearance of the various device regions with a high degree of reliability. Consequently, upon forming sophisticated metallization structures, undue over-polishing may be avoided while at the same time providing reduced leakage currents due to enhanced material removal.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a top ring configured to hold and press the substrate against the polishing surface, a top ring shaft configured to lift and lower the top ring, and an elongation detecting device configured to detect an elongation of the top ring shaft. The polishing apparatus further includes a controller configured to set a vertical position of the top ring at the time of polishing, and control a lifting and lowering mechanism to lower the top ring to a preset polishing position as the set vertical position. The controller corrects the preset polishing position based on the elongation of the top ring shaft which has been detected by the elongation detecting device.

Abstract: Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.

Abstract: Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing.

Abstract: A method and apparatus for using continuous-loop wires to drive circular flat-surfaced disk-type workholders which are positioned between two opposed upper and lower abrasive-surfaced rotatable platens. Flat-surfaced workpieces are mounted in receptacle openings in the workholders where both surfaces of the workpieces are simultaneously abraded by the two opposed platen that have annular bands of abrasive coatings. The drive wires allow the workholders to be driven at high speeds because of the smooth-action interface between the wires and the circular workholder disks that have circular wire grooves around the peripheries of the workholders. Each workholder assembly consists of a workholder disk, a drive wire, wire idlers, workholder idlers, a wire-tension device, a workholder disk support device and a wire drive motor. The workholder assemblies can be moved away from the platen surface to change platen abrasive disks. Three workholders provide stable three-point support of a floating upper platen.

Abstract: Chemical-mechanical polishing or planarization (CMP) is enhanced with multi-zone slurry delivery. A polishing pad is provided that contacts with the work piece, and a multi-zone platen is displaced proximate to the polishing pad to facilitate slurry delivery. The platen includes multiple fluid distribution layers that each include a fluid-distributing channel extending from a fluid source to a distribution point on layer. The distribution points on each of the fluid distribution layers correspond to different locations on the polishing surface to thereby create multiple fluid-delivery zones on the pad.

Abstract: A wafer transferring apparatus includes a top ring for holding a wafer on a lower end surface thereof and a pusher mechanism for transferring the wafer to and from the top ring. The pusher mechanism has a wafer rest for placing the wafer thereon and is arranged to allow the wafer released from the lower end surface of the top ring to be seated on the wafer rest. The pusher mechanism also has a sensor mechanism for detecting when the wafer is properly seated on the wafer rest. The sensor mechanism is adapted to block sensor light emitted from a light-emitting device by the wafer seated on the wafer rest.