Abstract: The present embodiment provides for methods and systems for use in processing objects such as wafers, including polishing and/or grinding wafers. Some embodiments provide systems that include a front-end module and a processing module. The front end module couples with a storage device that stores objects for processing. The front-end module can comprise a single robot, a transfer station, and a plurality of end effectors. The processing module is coupled with the front-end module such that the single robot delivers objects from the storage device to the processing module. The processing module comprising a rotating table, and a spindle with a carrier configured to retrieve the delivered object and process the object on the rotating table.

Abstract: Retaining rings with curved surfaces are described. The curved surfaces prevent damage to a fixed abrasive polishing pad when the retaining ring is used in a polishing process. The curved surfaces are on the bottom surface of the ring, such as along the outer diameter and/or along the sidewalls of channels formed in the bottom of the ring.

Abstract: A method and apparatus for robotic devices that can be used to load and remove workpieces and abrasive disks for an abrading system having a floating, rotatable abrading platen that is three-point supported by annular, flat abrading-surface of the floating platen. The rotary spindles are mounted on the flat horizontal surface of a machine base and the spindle-top flat surfaces are aligned to be precisely co-planar with each other where the rotational-centers of each of the spindles fixed-position rotary flat-surfaced spindles. The flexible abrasive disks are releasably attached to the are positioned at the center of the annular radial-width of the platen abrading-surface. Flat-surfaced workpieces are attached to the spindle-top flat surfaces and the abrasive surface of the abrasive disk that is attached to the rotating floating-platen abrading surface contacts the workpieces to perform single-sided abrading on the workpieces.

Abstract: A method and apparatus for releasably attaching flexible abrasive disks to a flat-surfaced platen that floats in three-point abrading contact with three flat-surfaced rotatable fixed-position workpiece spindles that are mounted on spherical-rotation two-piece spindle-mount devices that are attached to a nominally-flat abrading machine base. The spindle-top flat surfaces are precisely co-planar with each other. The three spindles are positioned to form a triangle of platen supports where the rotational-centers of each of the spindles are positioned at the center of the annular width of the platen abrading-surface. Flat surfaced workpieces are attached to the spindles and the rotating floating-platen abrasive surface contacts the workpieces to perform single-sided abrading on them. The disk abrasive surfaces can be re-flattened by attaching abrasive disk-type components to the three spindles that are rotated while in abrading contact with the rotating abrasive disk.

Abstract: A method and apparatus for releasably attaching flexible abrasive disks to a flat-surfaced platen that floats in three-point abrading contact with three rigid equal-height flat-surfaced rotatable fixed-position workpiece spindles that are mounted on a precision-flat abrading machine base where the spindle surfaces are in a common plane that is co-planar with the base surface. The three spindles are positioned to form a triangle of platen supports where the rotational-centers of each of the spindles are positioned at the center of the annular width of the platen abrading surface. Flat surfaced workpieces are attached to the spindles and the rotating floating-platen abrasive surface contacts all three rotating workpieces to perform single-sided abrading. The platen abrasive surface can be re-flattened by attaching equal-thickness abrasive disks to the three spindles that are rotated while in abrading contact with the rotating platen abrasive. There is no wear of the abrasive-disk protected platen surface.

Abstract: A method and apparatus for releasably attaching flexible abrasive disks to a flat-surfaced platen that floats in three-point abrading contact with three rigid equal-height flat-surfaced rotatable fixed-position workpiece spindles that are mounted on a precision-flat abrading machine base where the spindle surfaces are in a common plane that is co-planar with the base surface. The three spindles are positioned to form a triangle of platen supports where the rotational-centers of each of the spindles are positioned at the center of the annular width of the platen abrading surface. Flat surfaced workpieces are attached to the spindles and the rotating floating-platen abrasive surface contacts all three rotating workpieces to perform single-sided abrading. The platen abrasive surface can be re-flattened by attaching equal-thickness abrasive disks to the three spindles that are rotated while in abrading contact with the rotating platen abrasive. There is no wear of the abrasive-disk protected platen surface.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Abstract: Planarizing systems and methods of planarizing microelectronic workpieces using mechanical and/or chemical-mechanical planarization are disclosed herein. In one embodiment, a planarizing system includes a platen having a support surface carrying a planarizing pad. The planarizing pad includes an optically transmissive window extending through the planarizing pad that forms a continuous segment of the planarizing pad. The system also includes a workpiece carrier configured to move the workpiece relative to the planarizing pad and an optical monitor positioned proximate to the platen. The optical monitor emits light through the window and detects reflected light from the workpiece through the window.

Abstract: A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.

Abstract: A glass mold polishing structure and method. The method includes providing a polishing tool comprising mounting plate, a chuck plate over and mechanically attached to the mounting plate, and a pad structure over and mechanically attached to the chuck plate. A retaining structure is attached the chuck plate. A glass mold comprising a plurality of cavities is placed on the pad structure and within a perimeter formed by the retaining structure. A vacuum device is attached to the chuck plate. The vacuum device is activated such that a vacuum is formed and mechanically attaches the glass mold to the pad structure. The polishing tool comprising the glass mold mechanically attached to the pad structure is placed over and in contact with the polishing pad. The polishing tool comprising the glass mold is rotated. The glass mold is polished as a result of the rotation.

Abstract: A system for polishing a float glass used for liquid crystal displays includes a lower unit configured to rotate a float glass to be polished, a head assembly configured to be rotatable in contact with the float glass, and a moving unit configured to move the head assembly in a horizontal direction, wherein the head assembly includes at least two heads that are rotatable, respectively.

Abstract: A chemical-mechanical polishing machine and associated methods are disclosed. One embodiment of the machine includes a polishing pad, a wafer carrier corresponding to the polishing pad and configured to carry a semiconductor wafer, and a transfer station proximate to the polishing pad for holding the wafer during loading and/or unloading. At least one of the wafer carrier and the transfer station is configured to dissipate electrostatic charge from the wafer.

Abstract: In the present invention, an insulating material is applied onto a substrate in a coating treatment unit to form a coating insulating film. The substrate is heated in the heating processing unit, whereby the coating insulating film is hardened partway. A brush is then pressed against the front surface of the coating insulating film in a planarization unit and moved along the front surface of the coating insulating film, thereby planarizing the coating insulating film. The substrate is then heated to completely harden the coating insulating film. According to the present invention, the coating film can be planarized without using the CMP technology.

Abstract: A polishing head for a chemical mechanical polishing apparatus is provided which includes at least two polishing head zones configured to provide different temperatures for transferring heat to at least two zones of a substrate corresponding to the at least two polishing head zones. The present disclosure addresses chemical mechanical polishing which allows a control of the polishing profile even if slurries are used, which show almost no dependency between polishing rate and down force.

Abstract: A workpiece double-disc grinding apparatus including a holder that supports a thin-plate-like workpiece from an outer periphery along a radial direction and is rotatable; a pair of static pressure support members that support the holder from both sides along an axial direction of the rotation thereof in a contactless manner based on a static fluid pressure; and a pair of grinding stones that simultaneously grind both surfaces of a workpiece supported by the holder, in which an interval between the holder and the static pressure support member is not greater than 50 ?m, and the static pressure of the fluid that is not lower than 0.3 MPa. As a result, the workpiece double-disc grinding apparatus and a workpiece double-disc grinding method can stabilize a position of the holder, which can be a cause that degrades a nanotopography of the workpiece in the double-disc grinding for the workpiece.

Abstract: A double side polishing apparatus comprises an upper polishing plate and a lower polishing plate for polishing both sides of a wafer; a plurality of carriers, each including a center plate and a circumferential plate, the center plate having a mounting hole where the wafer is mounted, the circumferential plate having a fitting hole where the center plate is fitted and a gear part formed along the outer periphery thereof, the center of the mounting hole being eccentric from the center of the center plate, the center of the fitting hole being eccentric from the center of the circumferential plate; and a sun gear and an internal gear engaged with the gear part to transmit a rotational force to the plurality of carriers, wherein a fitting direction of a center plate into a fitting hole is adjustable for at least two carriers among the plurality of carriers.

Abstract: A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad.

Abstract: Provided is a substrate polishing apparatus that includes a polishing unit and a pad supporting member. The polishing unit includes a polishing pad polishing a substrate seated on a substrate supporting member, and a pad driving member moving the polishing pad. The pad supporting member is disposed at a side of the substrate supporting member to support a portion of a polishing surface the polishing pad without contacting the substrate when an edge of the substrate seated on the substrate supporting member is polished. Accordingly, the substrate polishing apparatus prevents the polishing pad from being inclined to the outer side of a substrate while an edge of the substrate is polished, thereby improving polishing efficiency and preventing the breakage of a substrate during a polishing process.

Abstract: A polishing method, a polishing pad and a polishing system are provided. In the invention, the polishing pad is used to polish a polishing article. The polishing pad includes a polishing layer and a surface pattern disposed in the polishing layer. The polishing layer includes a polishing surface, a rotating central region, and a peripheral region. The surface pattern includes many grooves distributed from near the rotating central region and extending outward to near the peripheral region. The grooves include many groove cross sections along a circumferential direction of a same radius. Each of the groove cross sections has a left sidewall and a right sidewall. An included angle is formed by the polishing surface and one of a group of the left sidewalls and a group of the right sidewalls. The included angle is an obtuse angle.

Abstract: The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.

Abstract: An improved chemical mechanical polishing retaining ring. A representative embodiment comprises a base portion made from a wear-resistant plastic material, and an upper portion, or backbone portion, made from a stiffer and more wear resistant material. One of the base or backbone portion is preferably overmolded onto the other. The base portion can be generally defined by a flat pad-contacting surface, an outer surface, and an inner surface. The base portion can additionally include channels extending from the outer surface to the inner surface to facilitate transfer of slurry to and from the substrate to be polished during the process. One or both of the base portion or backbone portion further includes a plurality of circular ribs that serve to create additional bonding surface with the overmolded material. The retaining ring may additionally includes a plurality of bosses with threaded insert holes by which the retaining ring is attached to a chemical mechanical polishing system.

Abstract: Systems and methods for removing microfeature workpiece surface defects are disclosed. A method for processing a microfeature workpiece in accordance with one embodiment includes removing surface defects from a surface of a microfeature workpiece by engaging the surface with a buffing medium having a first hardness, and moving at least one of the workpiece and the buffing medium relative to the other. After removing the surface defects and before adding additional material to the microfeature workpiece the method can further include engaging the microfeature workpiece with a polishing pad having a second hardness greater than the first hardness. Additional material can be removed from the microfeature workpiece by moving at least one of the microfeature workpiece and the polishing pad relative to the other.

Abstract: The present invention provides an apparatus for heating or cooling a polishing surface. This apparatus includes a heat exchanger arranged so as to face the polishing surface when the workpiece is polished. The heat exchanger includes a medium passage through which a heat-exchanging medium flows, and a bottom surface facing the polishing surface. At least a part of the bottom surface is inclined with an upward gradient above the polishing surface such that a polishing liquid on the polishing surface generates a lift exerted on the bottom surface during movement of the polishing surface.

Abstract: The spacing between an abrasive type surface polishing tool and the surface of the work piece that is being polished is controlled dynamically so that variations in the area of the abrasive pad in contact with the surface of the work piece compensated, thereby eliminating size variations in this contact area and the accompanying variations in material removal that produce surface height fluctuations.

Abstract: A chemical mechanical polishing pad (104, 400) that includes a polishing layer (108, 420, 500) having a set of primary grooves (124, 408, 516) formed in a polishing surface (110, 428, 520) of the pad. The pad also includes a set of secondary grooves (128, 404, 504) that become selectively active as a function of the wear of the polishing layer from polishing.

Abstract: A polishing apparatus includes: a wafer polishing unit including a polishing surface plate, an abrasive supply part supplying an abrasive to a polishing pad placed on the polishing surface plate, and a wafer holding part holding a semiconductor wafer; and a dressing unit including a dresser. The dresser has a pellet-shaped grindstone with abrasive particles fixed to a surface thereof. The pellet-shaped grindstone is divided into a first region along an outer peripheral portion thereof and a second region located inside the first region. A chipping preventing portion for the abrasive particles is provided in the first region.

Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

Abstract: Provided is a chemical mechanical polishing (CMP) apparatus. The CMP apparatus may include a polishing pad including a plurality of concave regions. These concave regions may be two-dimensionally arranged in the polishing pad in a first direction and a second direction that are not perpendicular to each other and not parallel to each other. The concave regions arranged in the first direction may have a first pitch, and the concave regions arranged in the second direction may have a second pitch equal to the first pitch.

Abstract: A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

Abstract: A chemical mechanical polishing method and apparatus provides a deformable, telescoping slurry dispenser arm coupled to a dispenser head that may be arcuate in shape and may also be a bendable telescoping member that can be adjusted to vary the number of slurry dispenser ports and the degree of curvature of the dispenser head. The dispenser arm may additionally include slurry dispenser ports therein. The dispenser arm may advantageously be formed of a plurality of nested tubes that are slidable with respect to one another. The adjustable dispenser arm may pivot about a pivot point and can be variously positioned to accommodate different sized polishing pads used to polish substrates of different dimensions and the bendable, telescoping slurry dispenser arm and dispenser head provide uniform slurry distribution to any of various wafer polishing locations, effective slurry usage and uniform polishing profiles in each case.

Abstract: The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnected unit cells (225). The interconnected unit cells (225) are reticulated for allowing fluid flow and removal of polishing debris. A plurality of polishing elements (208, 308 and 408) form the three-dimensional network of interconnected unit cells (225). The polishing elements (208, 308 and 408) have a first end connected to a first adjacent polishing element at a first junction (209, 309 and 409) and a second end connected to a second adjacent polishing element at a second junction (209, 309 and 409) and having a cross-sectional area (222, 322 and 422) that remains within 30% between the first and the second junctions (209, 309 and 409).

Abstract: A polishing system includes a polishing pad having a solid light-transmissive window, an optical fiber having an end, and a spacer having a vertical aperture therethrough. A bottom surface of the spacer contacts the end of the optical fiber, a top surface of the spacer contacts the underside of the window, and the vertical aperture is aligned with the optical fiber.

Abstract: The present invention discloses methods and systems for increasing polishing performance of a CMP process. In one aspect, for example, a method of increasing polishing performance of a CMP process includes vibrating a contact interface between a CMP pad and a wafer during a CMP process, such that oscillations between the CMP pad and the wafer occurs in a direction substantially parallel to a working surface of the CMP pad. In one specific aspect, vibrating the contact interface includes vibrating the contact interface in a direction substantially parallel to the contact interface. The vibrating can include vibrating the CMP pad, vibrating the wafer, or vibrating the CMP pad and the wafer. Such vibrations can allow the contact pressure at the contact interface to be decreased as compared to a contact interface that is not vibrated to minimize damage to the CMP pad or the wafer.

Abstract: A precision machining apparatus is structured such that a feed-screw mechanism and an actuator are mounted on a second mount which supports a rotating device that rotates a wheel, and grinding is performed while appropriately adjusting the amount of movement of the second mount in a rough grinding stage through an ultra-precision grinding stage. A posture control device is interposed between a first mount and a rotating device that rotates a grinding target body. The thickness and evenness of the grinding target body are measured by an optical probe and the measurement results are sent to a computer. A feedback command is then sent to the posture control device to reduce the difference between target values and the measurement values and posture control is performed accordingly.

Abstract: The present invention provides chemical-mechanical polishing (CMP) methods and apparatus suitable for polishing a substrate utilizing a low suspended solids slurry composition. The CMP methods of the invention comprise polishing a substrate with CMP slurry containing a low suspended solids level (e.g., about 0.01 percent by weight to about 1.0 percent by weight) of a particulate abrasive material in a CMP apparatus, while continuously monitoring and accurately maintaining a predetermined total suspended solids (TSS) level in the slurry. Preferably, maximum TSS variability of the slurry is less than about 20 percent (i.e., ±20% of the target TSS level), more preferably less than about 10 percent TSS variability (i.e., ±10% of the target TSS level) during the course of the polishing process.

Abstract: Provided is a polishing apparatus comprising a lower stool (12), a motor (18a) and a speed reducer (19a) for driving the lower stool, and a box (17) for covering at least the portion of the lower stool below the working action face. The polishing apparatus polishes a wafer by forcing the wafer to contact the lower stool and by rotating the lower stool. The box has its inside separated by partitions (31a and 31b) into a plurality of regions, and the motor for driving the lower stool is arranged in a region other than the region containing the lower stool. The polishing apparatus can manufacture a wafer of a stable shape, irrespective of the time elapsed from the running start and the presence/absence of the stop of the polishing apparatus.

Abstract: A double-side grinding apparatus is designed to be capable of minimizing thermal expansion of hydrostatic pad members and reducing nanotopography in performing wafer grinding. The double-side grinding apparatus is a double-side grinding apparatus for wafers that can simultaneously grind either surface of a wafer to be ground by pressing a grindstone against either surface of the wafer to be ground while hydrostatically supporting either surface of the wafer to be ground in a noncontact manner. Each hydrostatic supporting unit is formed with a hydrostatic pad member facing the wafer to be ground, and a base member placed on the back surface of the hydrostatic pad member. The hydrostatic pad member is made of a ceramic member, and the base member is made of a metal member.

Abstract: In a semiconductor wafer processing method of forming a semiconductor wafer having a desired thickness by grinding a rear surface of the semiconductor wafer having a plurality of devices formed on a front surface thereof, the rear surface of the semiconductor wafer is ground so that the semiconductor wafer has a thickness of 10 ?m to 100 ?m, and a strain layer having a thickness of 0.05 ?m to 0.1 ?m is left on the rear surface of the semiconductor wafer by the grinding. The strain layer is left to provide the gettering effect, preventing a harmful influence exerted on the quality of the semiconductor devices. Degradation in transverse rupture strength can be prevented by the grinding.

Abstract: Provided are a substrate polishing apparatus and a method of polishing a substrate using the same. The substrate polishing apparatus includes a substrate supporting member, a polishing unit, and a control unit. The substrate is seated on the rotatable substrate supporting member. The polishing unit includes a rotatable and swingable polishing pad to polish a top surface of the substrate. The control unit controls the substrate supporting member and the polishing unit during a polishing process to adjust a value of a polishing variable adjusting a polishing amount of the substrate according to a horizontal position of the polishing pad with respect to the substrate. Therefore, the substrate polishing apparatus may locally adjust the polishing amount of the substrate to improve polishing uniformity and product yield.

Abstract: Semiconductor wafer provided with a strain-relaxed layer of Si1-xGex, are polished in a first step of mechanical machining of the Si1-xGex layer of the semiconductor wafer in a polishing machine using a polishing pad containing fixedly bonded abrasive materials having a particle size of 0.55 ?m or less, and also a second step of a chemomechanical machining of the previously mechanically machined Si1-xGex layer of the semiconductor wafer using a polishing pad and with supply of a polishing agent slurry containing abrasive materials.

Abstract: A polishing apparatus includes a loading section (14) for placing therein a cassette (12) in which a plurality of polishing objects are housed; a first polishing line (20) and a second polishing line (30) for polishing a polishing object; a cleaning line (40) having cleaning machines (42a, 42b, 42c, 42d) for cleaning the polishing object after polishing and a transport unit (44) for transporting the polishing object; a transport mechanism (50) for transporting the polishing object between the loading section (14), the polishing lines (20, 30) and the cleaning line (40); and a control section for controlling the polishing lines (20, 30), the cleaning line (40) and the transport mechanism (50).

Abstract: While a substrate is polished, it is also irradiated with light from a light source. A current spectrum of the light reflected from the surface of the substrate is measured. A selected peak, having a first parameter value, is identified in the current spectrum. A value of a second parameter associated with the first parameter is determined from a lookup table using a processor. Depending on the value of the second parameter, the polishing of the substrate is changed. An initial spectrum of light reflected from the substrate before the polishing of the substrate can be measured and a wavelength corresponding to a selected peak of the initial spectrum can be determined.

Abstract: A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected time at which each substrate will reach a target thickness is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates reach the target thickness closer to the same time than without the adjustment.

Abstract: A method of forming bare silicon substrates is described. A bare silicon substrate is measured, wherein measuring is performed by a non-contact capacitance measurement device to obtain a signal at a point on the substrate. The signal or a thickness indicated by the signal is communicated to a controller. An adjusted polishing parameter according to the signal or thickness indicated by the signal is determined. After determining an adjusted polishing parameter, the bare silicon substrate is polished on a polisher using the adjusted polishing parameter.

Abstract: At least one wafer is suspended on a respective jig shaft above a polishing platen. The degree of parallelism between the wafer and the polishing platen is controlled using a three-point suspension, which allows for planar pitch adjustments using vertical actuation algorithms. As the wafer is lowered into contact against the polishing platen, a load cell senses how much of the weight of the jig shaft, wafer mount and wafer continues to be supported by the jig. The vertical displacement of the wafer is controlled using a linear actuator responsive to a signal from the load cell. Vertical actuation of the wafer serves to increase or decrease this amount of supported weight, in turn decreasing or increasing the amount of applied down-force exerted between the wafer and the platen. A compression spring is used to increase the resolution of the pressure control. Finally, system components exposed to the work environment are encapsulated by chemically resistive components to prevent corrosion of system components.

Abstract: The partial contact wafer retaining ring apparatus is disclosed. For example, one disclosed embodiment provides a wafer retaining ring comprising a ring for retaining the wafer, the ring having an inner diameter surface configured to restrict lateral wafer motion, and at least one interface surface configured to interface with a polishing surface. The interface surface comprises a recessed section adjacent to the ring inner diameter, configured to preclude contact between the recessed section and the polishing surface.

Abstract: In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed.

Abstract: A method and apparatus for polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

Abstract: A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

Abstract: A seasoning plate is placed on a polishing pad and performs seasoning of the polishing pad by abrading the polishing pad through the friction caused by rotation of the polishing pad. The seasoning plate includes: conditioners that abrade the polishing pad; a round flexible substrate that has the conditioners attached to the lower face thereof; an O-ring that is placed on the upper face of the flexible substrate, the O-ring forming a circle concentric with the flexible substrate; and a weight plate serving as a weight portion that is placed on the O-ring and applies weight for deforming the flexible substrate.