Abstract: A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.

Abstract: A polishing apparatus that employs a polishing media retention arrangement to prevent slippage or wrinkles in the polishing media during polishing. The polishing media is drawn against a support surface by a vacuum applied between the polishing media and the support surface. Also, a porous layer may be placed between the polishing media and the support surface to form dimples in the polishing media upon the application of vacuum. An alternative arrangement draws the polishing media against a carrier and the substrate to be polished.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

Abstract: Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.

Abstract: A chemical mechanical polishing system having a wafer carrier assembly is provided. The wafer carrier assembly includes a wafer carrier support frame, a wafer carrier head housing rotable mounted on the wafer carrier support frame, with a base including a bladder bellows operating connecting the wafer carrier base to the wafer carrier head housing such that rotational torque is transferred from the wafer carrier head housing to the wafer carrier base. Further provided is a retaining ring, operatively connected to a retaining ring bearing which allows relative axial motion while constraining relative radial motion between the retaining ring and the wafer carrier head housing; and a retaining ring bellows, operatively connecting the retaining ring bearing to urge the retaining ring against a polishing member.

Abstract: A retaining ring assembly for use in chemical mechanical polishing that includes an annular plastic retaining ring portion defining an annular projection thereon, an annular metal backing defining an annular channel therein for receiving the projection and a pair of elongated spring members concentrically disposed about the annular projection on the retaining ring. The channel in the backing is sized so as to receive the annular projection on the retaining ring and spring members therein upon the retaining ring being urged against the backing whereupon the spring members bear against the projection on the retaining ring and portions of the annular backing so as to releasably secure the retaining ring to the backing such that the retaining ring can be replaced upon becoming worn during use and the metal backing can be reused.

Abstract: Apparatuses and methods for monitoring microfeature workpiece rotation during processing, such as brushing, by monitoring characteristics corresponding to a state of a magnetic field proximate to the rotating microfeature workpiece are disclosed herein. The characteristic can depend on the relative motion between the magnetic field and the conductive material of the microfeature workpiece. The characteristic can include the strength of the magnetic field, current in an electromagnet circuit used to create the magnetic field, force exerted on the magnetic field source, or movement of the magnetic field source. The apparatus can include a feedback control device to adjust the rotation speed of the microfeature workpiece based on the characteristic detected.

Abstract: A method and assembly for generating a hydrodynamic air bearing is described, wherein at least one rotor is rotated to force air through channels defined in a platen located adjacent to a linear belt and the forced air is directed to the linear belt. The method includes rotating at least one rotor with a motor such that the rotor forces air through channels defined in a platen, and the air is directed toward a linear belt. The assembly includes a housing in which a platen, rotors, and a bearing plate are located.

Abstract: A polishing apparatus has a polishing table having a polishing surface, a top ring for holding a workpiece to be polished and pressing the workpiece against the polishing surface on the polishing table, and a film thickness measuring device embedded in the polishing table. The film thickness measuring device includes a light source for applying light having a predetermined wavelength to a surface of the workpiece, a spectroscope for separating light reflected from the surface of the workpiece, and a charge coupled device array for capturing light separated by the spectroscope. The polishing apparatus also has a controller operable to analyze information captured by the charge coupled device array over the entire surface of the workpiece to obtain a film thickness at a desired point on the surface of the workpiece.

Abstract: Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: An in-line hot-wire sensor for monitoring the mixing and the flow rate of slurry is disclosed. The hot-wire sensor may include a number of resistors organized into a Wheatstone bridge, as well as a frequency-domain transform mechanism. The resistors include a hot-wire resistor that is placed in-line with the slurry after substances have been mixed to become the slurry. The Wheatstone bridge thus yields a signal that is transformed to the frequency domain by the frequency-domain transform mechanism, such as by performing a Fast Fourier Transform (FFT) of the signal. The frequency-domain transform is used to monitor the mixing of the substances into the slurry, and the flow rate of the slurry. The signal may be amplified prior to transformation to the frequency domain.

Abstract: A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.

Abstract: A wafer carrier with a back pressure applicator system adapted to provide high resolution back pressure control. A plurality of millimeter scale distensible elements are disposed between the wafer carrier pressure plate and a process wafer, and selectively distended to provide excess backpressure to select small areas of a wafer known to exhibit resistance to removal vis-á-vis the surrounding wafer surface. Distensible elements may be in the form of expandable pneumatic chambers or electro-mechanical elements such as solenoids, shape memory elements, electrostatic plates, etc.

Abstract: A method and apparatus of in situ monitoring and dispersing unwanted particles in slurry used during CMP polishing. The method includes providing a slurry path, applying to the slurry path a microcavitation field of a first level to detect particles of a predetermined size, applying to the slurry path a microcavitation field of a second level that is capable of dispersing said particles, and after the second applying step, feeding the slurry to a CMP polishing unit. Particle size may be detected and/or the microcavitation field strength may be set according to particle size. In addition, field strength may be calibrated according to levels determined by polystyrene control particles of a known size and/or concentration. A single or dual transducer may apply the microcavitation.

Abstract: The invention provides a chemical mechanical polishing and pad dressing method based on differing the rotational of a pad dresser, head, and/or polishing pad to improve center removal slow profiling.

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract: A wafer polishing solution and method for polishing a wafer comprising an amino acid and calcium ions or barium ions. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.

Abstract: Polishing heads to polish the surface of a semiconductor wafer and methods of using the same are disclosed. A disclosed polishing head includes at least one rotating head to apply a downward force; and a plurality of vacuum cells to hold the wafer via a vacuum force and to convey a least some of the downward force from the at least one rotating head to the wafer.

Abstract: The abrasive machine of the present invention is capable of changing pressure applied to a work piece and easily defining optimum abrading conditions. The abrasive machine comprises: a pressure vessel capable of increasing and reducing inner pressure; an abrasive plate provided in the pressure vessel; a pressing plate provided on the abrasive plate, the pressing plate pressing the work piece onto the abrasive plate; a driving unit relatively moving the abrasive plate with respect to the pressing plate so as to abrade the work piece; and a pressure source connected to the pressure vessel, the pressure source increasing or reducing the inner pressure of the pressure vessel.

Abstract: Described is an apparatus for the processing of substantially planar workpieces, which can be moved in a transport plane relatively to the apparatus. The apparatus contains at least one grinding head with a tool carrier rotatable around a carrier axis which is orthogonal with respect to the conveyor plane and with several grinding brushes containing a brush body and bristles attached thereto being mounted to the tool carrier so that they can be rotated individually around individual brush axes, the ends of the bristles of the very same grinding brush being arranged at various distances to the transport plane.

Abstract: Disclosed are a polishing agent containing at least globular-silica powder and alumina powder, as well as a lapping method in which a workpiece is held between an upper turn table and a lower turn table and is lapped by rotating the upper and the lower turn tables while being supplied with a polishing agent, wherein the polishing agent supplied is the polishing agent containing at least globular-silica powder and alumina powder. Thus, there can be provided a polishing agent capable of further improving the quality, especially, the flatness of workpieces such as silicon wafers and capable of polishing the workpieces at an excellent polishing rate.

Abstract: A chemical mechanical polishing system having a wafer carrier assembly is provided. The wafer carrier assembly includes a wafer carrier support frame, a wafer carrier head housing rotable mounted on the wafer carrier support frame, with a base including a bladder bellows operating connecting the wafer carrier base to the wafer carrier head housing such that rotational torque is transferred from the wafer carrier head housing to the wafer carrier base. Further provided is a retaining ring, operatively connected to a retaining ring bearing which allows relative axial motion while constraining relative radial motion between the retaining ring and the wafer carrier head housing; and a retaining ring bellows, operatively connecting the retaining ring bearing to urge the retaining ring against a polishing member.

Abstract: A novel retaining ring having a wear pad of such construction, design and material such that it provides improved resistance to wear and/or degradation as compared to currently available products for use in the chemical mechanical planarization (CMP) of semiconductor wafers and similar materials. The retaining ring with wear pad of the invention is able to withstand increased operating temperatures and pressures at the polishing surface of the wafer with less wear than would normally be encountered with currently used materials and designs. The ability to operate at increased temperature and pressure can accelerate the rate of removal of material from a semiconductor wafer in some processes.

Abstract: A liquid suspension for planarizing an outer surface of a material comprises a liquid suspension medium of a specific liquid density; and a plurality of solid, contact-sensitive abrasive particles of a constant solid density and suspended in the liquid suspension medium. The liquid and solid densities are approximately the same so that the abrasive particles freely and stably suspend in the liquid suspension medium, without gravitational separation by settling down or floating up. In this way, damaging contacts of the solid abrasive particles with one another are minimized.

Abstract: A method and control system for detecting harmonic oscillation in a chemical mechanical polishing process and reacting thereto, such as by taking steps to at least one of: 1) reduce or eliminate the harmonic oscillation; and 2) counter the noise which is associated with the harmonic oscillation. By reducing or eliminating harmonic oscillation, films with reduced structure strengths including low k dielectric films can be used. By countering the noise, the quality of the work environment is improved.

Abstract: Planarizing machines for chemical-mechanical planarization of microelectronic substrate assemblies are disclosed. The planarizing machines for processing microelectronic substrate assemblies generally include a table, a pad support assembly either positioned on or in the table, and a planarizing medium coupled to the pad support assembly. The pad support assembly includes a fluid container and an elastic membrane coupled to the fluid container. The fluid container generally is a basin that is either a separate component that is attached to the table, or a depression in the table itself. The fluid container can also be a bladder attached to the table. The fluid chamber is filled with support fluid to support the elastic membrane over the fluid chamber.

Abstract: A polishing apparatus for polishing a substrate comprises a turntable having a polishing surface, a substrate holder for holding a substrate and bringing the substrate into contact under pressure with the polishing surface, a dresser including a dresser tool adapted to be brought into contact under a pressure with the polishing surface to dress or condition the polishing surface and a pressure device connected to the dresser for moving the dresser between a raised position where the dresser is spaced away from the polishing surface and a dressing position where the dresser rests on the polishing surface such that the dresser tool is in contact with the polishing surface under a pressure exerted by the weight of the dresser itself, the dresser comprising a follow-up mechanism allowing each one of dressing element to move up and down relative to a flange portion so as to follow a contour of the polishing surface of the turntable.

Abstract: A scheme for filling plugs through chemical mechanical polishing comprises depositing a malleable conductive layer over a dielectric layer having openings formed therein. The malleable conductive layer is deposited such that a liner is formed within the openings, however the openings are not completely filled. A chemical mechanical polishing process using an alumina based slurry at a neutral or slightly basic pH and no oxidizer is used to smear the malleable conductive layer sufficiently to fill the remainder of the openings in the dielectric layer forming filled or substantially filled plugs.

Abstract: A method and apparatus for conditioning and monitoring a planarizing medium used for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a conditioning body having a conditioning surface that engages a planarizing surface of the planarizing medium and is movable relative to the planarizing medium. A force sensor is coupled to the conditioning body to detect a frictional force imparted to the conditioning body by the planarizing medium when the conditioning body and the planarizing medium are moved relative to each other. The apparatus can further include a feedback device that controls the motion, position, or force between the conditioning body and the planarizing medium to control the conditioning of the planarizing medium.

Abstract: A wafer grinder withholds a lateral force and adjusts a tilt of worktable with precision. The wafer grinder is used to grind a wafer; that is, the tilt angle of wafer can be adjusted so that wafer is ground with precision. The wafer grinder has a housing module, a rotary worktable module, air pressure spindle module and an adjustment module.

Abstract: The invention is directed to chemical-mechanical polishing pads comprising a transparent window. In one embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material comprises about 20 wt. % or more of the transparent window. In another embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material is dispersed throughout the organic material and has a dimension of about 5 to 1000 nm, and wherein the transparent window has a total light transmittance of about 30% or more at at least one wavelength in the range of about 200 to 10,000 nm. In yet another embodiment, the transparent window comprises an inorganic/organic hybrid sol-gel material. In an additional embodiment, the transparent window comprises a polymer resin and a clarifying material, wherein the transparent window has a total light transmittance that is substantially higher than a window comprising only the polymeric resin.

Abstract: An optical disc repairing device is mounted on a repairing machine base to perform cleaning, maintenance and repair of the optical disc. The repairing device includes a movement transmitting element, a connecting element mounted on the movement transmitting element, a resilient piece mounted between the movement transmitting element and the connecting element, a carrier element mounted on the connecting element, and a repair element mounted on the carrier element. When the optical disc rotates, in association with a rotation of the repairing device, the scratched surface of the optical disc is polished until a surface without defects is obtained to proper reflection of the laser beam for data access from the optical disc.

Abstract: In a system and a method according to the present invention, a sensor signal, such as a motor current signal, from a drive assembly of a pad conditioning system is used to control a CMP system to compensate for a change in the conditions of consumables, thereby enhancing process stability.

Abstract: Carrier assemblies, planarizing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces are disclosed herein. In one embodiment, the carrier assembly includes a head having a chamber, a magnetic field source carried by the head, and a fluid with magnetic elements in the chamber. The magnetic field source has a first member that induces a magnetic field in the head. The fluid and/or the magnetic elements move within the chamber under the influence of the magnetic field source to exert a force against a portion of the micro-device workpiece. In a further aspect of this embodiment, the carrier assembly includes a flexible member in the chamber. The magnetic field source can be any device that induces a magnetic field, such as a permanent magnet, an electromagnet, or an electrically conductive coil.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: An abrading plate has a self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. The abrading plate, to produce a flat and mirror polished surface on the an object, has abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers, a binder material, and a given volume of porosity. A ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10-40% by volume. A surface is polished for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions and to obtain a flat surface.

Abstract: A reliable, inexpensive “back side” thinning process and apparatus therefor, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.

Abstract: A method of predicting the lapping property of a charged lapping plate uses samples with a known lap surface. The samples are lapped on the plate and a non-invasive sensor is used to determine the lapping rate under a fixed load and rotation speed. The total frictional force of the samples is measured during the lapping to calculate the friction and Preston coefficients of the plate. The samples are held in place while the plate rotates and the sensor measures the distance to the plate. The plate rotates for a specific time so that adequate removal of the pad material has occurred. The lapping rate is determined from a change in the gap distance over a time interval. The lapping rate and friction are then assessed to determine if the plate is lapping worthy.

Abstract: The fabrication of integrated circuits entails the repeated application of many basic processing steps, for instance, planarization—the process of making a surface flat, or planar. One specific technique for making surfaces flat is chemical-mechanical planarization, which typically entails applying slurry onto a surface of an integrated circuit and polishing the surface with a rotating polishing head. The head includes several holes, known as slurry dispensers, through which slurry is applied to the surface. After completion of a polishing operation, gas is forced through the slurry dispensers to separate the surface from the rotating head. Unfortunately, the gas dries slurry remaining on the surface, causing slurry particles to stick to the polished surface, which ultimately cause defects in integrated circuits.

Abstract: Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing are provided. One method includes scanning a specimen with a measurement device during polishing to generate output signals at measurement spots on the specimen. The method may also include determining a characteristic of polishing at the measurement spots from the output signals. In addition, the method may include determining relative or absolute locations of the measurement spots on the specimen. The method may further include generating a two-dimensional map of the characteristic at the relative or absolute locations of the measurement spots on the specimen. In some embodiments, the relative locations of the measurement spots may be determined from a representative scan path of the measurement device and an average spacing between starting points on individual scans.

Abstract: In a system and method to reduce wafer breakages in a wafer handling system, the position of a wafer on a platen is monitored and closing of the platen on a vacuum chamber is prevented if a misaligned wafer is detected. In one embodiment the wafer position is monitored by monitoring the air pressure in vacuum channels of a platen faceplate.

Abstract: Polishing pads, planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies. The polishing pads, for example, can be web-format pads, and the planarizing machines can be web-format machines. In a typical application, the web-format machines have a pad advancing mechanism and stationary table with a first dimension extending along a pad travel path, a second dimension transverse to the first dimension, and an illumination site from which a laser beam can emanate from the table. The pad advancing mechanism moves the pad along the pad travel path to replace worn portions of the pad with fresh portions. In one embodiment of the invention, a web-format polishing pad includes a planarizing medium and an optical pass-through system having a plurality of view sites through which a light beam can pass through the pad.

Abstract: The present invention relates to methods and apparatus that allow for chemical mechanical polishing using a flexible pad and variable fluid flow for variable polishing.

Abstract: An apparatus and method for chemical mechanical polishing are disclosed. An example apparatus for use with a chemical mechanical polishing (CMP) process includes a polishing part configured to perform a CMP process to a polishing endpoint for a polishing target deposited on a substrate, a cleaning part configured to clean the substrate, and a resistance measurement part configured to measure a sheet resistance of the substrate. The example apparatus also includes a CMP control part configured to determine based on the sheet resistance whether a residual target exists, to estimate re-polishing time, and to control the polishing part to perform a re-polishing process if the residual target exists.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: A device for predicting the lapping property of a charged lapping plate uses samples with a known lap surface. The samples are lapped on the plate and a non-invasive sensor is used to determine the lapping rate under a fixed load and rotation speed. The total frictional force of the samples is measured during the lapping to calculate the friction and Preston coefficients of the plate. The samples are held in place while the plate rotates and the sensor measures the distance to the plate. The plate rotates for a specific time so that adequate removal of the pad material has occurred. The lapping rate is determined from a change in the gap distance over a time interval. The lapping rate and friction are then assessed to determine if the plate is lapping worthy.

Abstract: Methods and systems to detect defects in an end effector for conditioning polishing pads used in polishing micro-device workpieces are disclosed herein. In one embodiment, a method of detecting defects in an end effector includes applying energy to a contact element of the end effector and determining a natural frequency of the contact element. Applying energy can include transmitting ultrasonic energy from a transducer to the contact element. The method can further include comparing the natural frequency of the contact element to a predetermined frequency limit to detect a defect. In another embodiment, a system to detect defects includes a conditioner having an end effector with a contact element, a transducer for applying energy to the contact element, and a controller operatively coupled to the conditioner and the transducer. The controller has a computer-readable medium containing instructions to perform the above-mentioned method.

Abstract: The end portion on the side of the second end surface of the first optical fiber 62 is inserted into the inner race in the central part of the roll-bearing type bearing 36, and is fastened to this inner race. The fastening position of this end surface on the side of the second end surface is adjusted to match a specified position on the axis of rotation 11 in order to emit probe light and allow the incidence of the reflected signal light. The probe light emitted from the second end surface of the second optical fiber 61 passes through the transparent window 23 and is caused to illuminate the polished surface of the substrate 42. The reflected signal light that is reflected from this point again passes through the transparent window 23 in the opposite direction, and is incident on the second end surface of the second optical fiber 61.