Abstract: An invention is provided for a platen for use in a CMP system. The platen includes an inner set of pressure sub regions capable of providing pressure to a polishing pad disposed above the platen. Each of the inner pressure sub regions is disposed below a wafer and within a circumference of the wafer. In addition, the platen includes an outer set of pressure sub regions capable of providing pressure to a polishing pad. Each of the outer set of pressure sub regions is disposed below the wafer and outside the circumference of the wafer. In this manner, the outer set of pressure sub regions is capable of shaping the polishing pad to achieve a particular removal rate.

Abstract: A chemical mechanical polishing (CMP) device carrier head (54) utilizing a pressure pack (58) for transferring a polishing force (D) to a wafer (15) being polished. The pressure pack may include a silicon gel material (60) encapsulated within a sealed urethane casing (62). The pressure pack provides a desired fluid coupling in the polishing force load path, allowing the carrier head to function as a front side floating reference polishing apparatus. The pressure pack may include a plurality of casings (70, 72) defining a plurality of chambers (66, 68) in order to affect the distribution of pressure across an abutting pressure plate (56, 65).

Abstract: A method for polishing wafers includes providing a wafer having a grating structure including a trench and a process layer formed in the trench; illuminating at least a portion of the process layer and the grating structure with a light source; measuring light reflected from the illuminated portion of the process layer and the grating structure to generate a reflection profile; and identifying dishing in the process layer based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure including a trench and a process layer formed in the trench, includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the process layer overlying the grating structure. The detector is adapted to measure light reflected from the illuminated portion of the grating structure and the process layer to generate a reflection profile.

Abstract: A chemical mechanical polish apparatus comprises a platen having a polishing pad thereon, a wafer carrier holding a wafer on the polishing pad, and a pusher. The pusher has a base disk and at least two guiding structures at the rim of the base disk. Each guiding structure has a shell with an opening, an elastic device and a pin moving through the opening, wherein the opening is non-linear.

Abstract: A method for planarizing a material surface by providing a suspension of solid abrasive particles in liquid suspension of medium density dm which is within 2 to 15% of the substantially constant solid density ds. The solid abrasive particles are thus generally freely and stably suspended in the suspension liquid n medium. Damage to the grinding and polishing qualities of the solid particles is minimized through reduced contact and collisions of the solid particles on one another.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: A ventilated platen/polishing pad assembly for chemical mechanical polishing copper conductors on a semiconductor wafer is disclosed. The ventilated platen is constructed by a platen having a multiplicity of apertures through a thickness of the platen, and a polishing pad that has a multiplicity of apertures for fluid communication with the multiplicity of apertures in the platen such that a gas can flow through the ventilated platen and the ventilated polishing pad to mix with a polishing slurry solution dispensed on top of the polishing pad. When an oxidizing gas is mixed with the slurry solution, the mass transfer process during the chemical mechanical polishing can be improved and thus improving the polishing uniformity of the copper surface.

Abstract: A polishing apparatus for polishing a substrate comprises a polishing table having a polishing surface, and a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against the polishing surface. The substrate holding apparatus comprises a vertically movable top ring body for holding a substrate, and a fluid supply source for supplying a fluid under a positive pressure or a negative pressure to a hermetically sealed chamber which is defined in the top ring body to control the pressure under which the substrate is pressed against the polishing surface. The substrate holding apparatus further comprises a measuring device disposed in a fluid passage interconnecting the hermetically sealed chamber and the fluid supply source for measuring a flow rate of the fluid in the fluid passage.

Abstract: A system provides a polishing pad for chemical mechanical planarization of an object larger in diameter than the polishing pad. The system comprises a magazine including a bottom for exposing at least a portion of a puck which holds a polishing pad, and a transfer apparatus for transferring the puck from the magazine in the first region to a pickup stand in a second region. The transfer apparatus includes a puck support being movable to retrieve the puck from the bottom of the magazine by coupling a capture portion of the puck support with an exposed portion of the puck and moving the puck with the puck support away from the magazine.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane that applies a load to a substrate. A central portion of the flexible membrane is formed of a first material with a different rigidity than a second material that forms the annular portion of the flexible membrane.

Abstract: The present invention delineates a carrier for an apparatus (10) which polishes a surface of a semiconductor wafer (56, 124). In a preferred embodiment, the carrier includes a rigid plate (34) connected to one or more diaphragms (40, 42) of soft, flexible material that provide pressurizable cavities (50, 52) having respective surfaces for contacting the back surface of the wafer. A plurality of conduits (28a, 28c) are used to selectively pressurize the diaphragm cavities. The carrier head may also include an inter-diaphragm cavity (54) formed between a portion of one diaphragm, a portion of another diaphragm, and the semiconductor wafer. The inter-diaphragm cavity is provided with its own conduit (28b) by which a source of pressurized fluid and a source of vacuum are selectively connected to the inter-diaphragm cavity. During operation, pressure and/or vacuum may be applied through one or more cavities to chuck (90) a wafer, and to pressurize (96) the cavities during polishing.

Abstract: Planarizing machines, alignment systems for planarizing machines, and methods for planarizing microelectronic substrates using mechanical and/or chemical-mechanical planarization. In one aspect of the invention, a planarizing machine for mechanical and/or chemical-mechanical planarization of a microelectronic substrate comprises a table, a planarizing pad, and a substrate carrier. The table can have a support panel and an opening through the support panel. The planarizing pad is on the support panel, and the pad has a window aligned with the opening. The substrate carrier assembly has a carrier head configured to hold a microelectronic substrate and drive system coupled to the carrier head. The carrier head and/or the table are movable relative to each other to rub the substrate against the planarizing pad. The planarizing machine also comprises an alignment assembly having a carriage assembly alignable with the opening and an actuator assembly coupled to the carriage assembly.

Abstract: A polishing apparatus includes a rotatable head assembly including a substrate retainer that incorporates a cavity in the face surface of the substrate retainer for temporarily holding polishing slurry during operation of the polishing apparatus. The cavity resides in the face surface of the substrate retainer at a location adjacent the perimeter surface of the retainer. During operation of the polishing apparatus, slurry flowing along the surface of the polishing pad flows into the cavity where a portion of the slurry is temporarily held. As the head assembly of the polishing apparatus rotates against the polishing pad, slurry continuously flows from the cavity across the polishing pad and is uniformly distributed across the exposed surface of the substrate being polished. An offset in the cavity wall permits used slurry to flow away from the substrate retainer during rotation of the head assembly.

Abstract: In a polishing apparatus, a wafer is sustained by a wafer carrier and the wafer is ground with a polishing pad which is rotationally driven. A slurry is fed on to the polishing pad through a slurry feed nozzle. A filter is disposed upstream from the wafer in the direction of rotation of the polishing pad and traps the swarf generated on the polishing pad. A defense barrier is provided around the polishing pad to prevent the slurry on the polishing pad from spilling out therefrom during polishing and thus retains the slurry thereon, thereby recycling the slurry on the polishing pad.

Abstract: A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

Abstract: A retainer ring of a polishing head of a CMP apparatus facilitates the removal of contaminants, such as slurry debris, which have found their way into the polishing head. The retainer ring includes an annular ring body, and a plurality of contaminant outlets extending from the inner peripheral surface of the ring body to the outer peripheral surface of the ring body. Inner openings defined at the inner peripheral surface of the ring body and outer openings defined at the outer peripheral surface of the ring body by the contaminant outlets are horizontally elongated slots. Also, each of the contaminant outlets consists of a plurality of inner holes and an outer hole which is joined to the plurality of inner holes. The contaminant outlets occupy at least 30% of the radially innermost peripheral surface along a line extending circumferentially along the surface.

Abstract: A carrier head for a chemical mechanical polishing apparatus. A layer of conformable material is disposed in a recess of the carrier head to provide a mounting surface for a substrate. The conformable material may be elastic and undergo normal strain in response to an applied load. The carrier head may also include a support fixture detachably connected to a backing fixture, a retaining ring connected directly to the conformable material, and a shield ring which projects over a portion of the layer of conformable material.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: A CMP system and methods make repeatable measurements of eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. The CMP system and method provide the repeatable measurement features while supplying fluids within the carrier to the wafer and to a wafer support without interfering with the polishing operations. Similarly, the CMP system and methods remove fluids from the wafer or puck carrier without interfering with the CMP operations. An initial coaxial relationship between an axis of rotation and a carrier axis is maintained during application of the eccentric force, such that a sensor is enabled to make repeatable measurements, as defined above, of the eccentric forces, and the carrier may be a wafer or a puck carrier.

Abstract: An aqueous based ceria slurry system and method for chemical mechanical polishing of semiconductor wafers, the slurry comprising less than 5 wt % abrasive cerium oxide particles and up to about the critical micelle concentration of a cationic surfactant, absent other abrasives, in a neutral to alkaline pH solution is disclosed. Also disclosed is slurry comprising a blend of surfactants including a pre-existing amount of anionic surfactant and an added amount of cationic and/or non-ionic surfactant.

Abstract: A workpiece carrier holds a workpiece such as a semiconductor wafer and presses the workpiece against a polishing surface on a polishing table. The workpiece carrier has a top ring body for holding the workpiece, and a retainer ring for holding an outer circumferential edge of the workpiece. A fluid chamber which is supplied with a pressurized fluid such as a compressed air is provided in the top ring body and covered by a resilient membrane. A plurality of pressing members are fixed to the resilient membrane for applying a pressing force through the resilient membrane to the workpiece under the pressure of the fluid in the fluid chamber.

Abstract: An arrangement for polishing a semiconductor wafer is disclosed. The arrangement includes a plurality of preassembled polishing pad assemblies which can be selectively coupled to, and decoupled from, an actuating mechanism for rotating the polishing pad assemblies. An associated method of polishing a semiconductor wafer is also disclosed.

Abstract: A workpiece carrier has a top ring body for holding a workpiece, a drive shaft for rotating the top ring body and moving the top ring body toward a turntable to press the workpiece against a polishing surface, and a universal joint for transmitting a pressing force from the drive shaft to the top ring body while allowing the drive shaft and the top ring body to be tilted relative to each other. The universal joint includes two members having curved surfaces formed along arcs having a predetermined radius of curvature from a center positioned on a surface of the workpiece which is held in contact with the polishing surface on the turntable, and four rollers held in rolling contact with the curved surfaces. Two of the rollers held in rolling contact with each respective two of the curved surfaces to allow the top ring body to be tilted relative to the drive shaft about a point positioned on the surface which is held in contact with the polishing surface on the turntable.

Abstract: Generally, a semiconductor wafer processing system and more specifically, a semiconductor wafer planarization system for polishing a workpiece, such as a semiconductor substrate or wafer. The system generally includes a first polishing module that has a polishing head for retaining a workpiece, a staging module and a set of load cups for transferring the workpiece to and from the polishing head. A primary robot that has a workpiece gripper transfers the workpiece between the first set of load cups and the staging module. The staging module and the load cups comprise transfer locations where processed and unprocessed workpieces may be set within the reach of processing modules and transfer devices so that the dwell time associated with handling polished and unpolished workpieces is reduced. Additionally, a method for transferring wafers about the polishing system is also disclosed.

Abstract: A finishing apparatus having magnetically responsive finishing elements that can be smaller than the workpiece being finished are disclosed. The finishing apparatus supplies a parallel finishing motion to finishing elements solely through magnetic coupling forces. The finishing apparatus can supply multiple different parallel finishing motions to multiple different finishing elements solely through magnetic coupling forces to improve finishing quality and versatility. The new magnetic finishing methods, apparatus, and magnetically responsive finishing elements can help improve yield and lower the cost of manufacture for finishing of workpieces having extremely close tolerances such as semiconductor wafers.

Abstract: The abrasive machine is capable of preventing deformation and bad abrasion of an abrasive cloth, maintaining flatness of an abrasive face of an abrasive plate and improving abrading accuracy. The abrasive machine comprises the abrasive plate and a holding unit for holding a work piece. In the holding unit, an inner head has a first concave section. An outer head has a second concave section. A holding plate is provided in the first concave section. An elastic holding member forms a first chamber. An outer enclosing member is provided to the outer head. An inner enclosing member is provided between the outer enclosing member and the inner head. A pressing member presses the abrasive face of the abrasive plate and encloses the holding plate. An elastic ring member a second chamber. A pressurizing unit pressurizes the chambers so as to press the work piece and the pressing member onto the abrasive face.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface, a holding surface of the top ring for holding the workpiece, and a retainer ring for retaining the workpiece within the holding surface of the top ring. The holding surface is deformable by fluid having variable pressure, and the retainer ring presses the polishing surface under a variable pressing force.

Abstract: An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

Abstract: A polishing stage is mounted on a body provided with a rough grinding stage and a fine grinding stage so that a wafer can be roughly ground, finely ground and polished in one planarization apparatus. The planarization apparatus also has a cleaning stage for cleaning a polishing pad of the polishing stage to thereby clean the dirty cleaning pad. The planarization apparatus is also provided with an etching unit to thereby perform a sequence of planarization from the rough grinding to the etching.

Abstract: A carrier head for a chemical mechanical polishing apparatus has a base, a first flexible membrane extending beneath the base to form a first pressurizable chamber, a support structure positioned in the first chamber, and a compressible film adjacent a bottom surface of the support structure. A lower surface of the first flexible membrane providing a mounting surface for a substrate. The compressible film has a plurality of apertures disposed in a pattern to establish a pressure distribution on a top surface of the first flexible membrane.

Abstract: The invention provides a method, for monitoring a chemical-mechanical polishing process, comprising receiving a real-time data signal from a chemical-mechanical polishing process, wherein the real-time data signal pertains to a frictional force, torque, or motor current, converting the data signal into a power spectrum of signals with different frequencies whose sum equals that of the original data signal, identifying and monitoring the signal components of the power spectrum corresponding to an aspect of the chemical-mechanical polishing process, detecting a change in the amplitude or frequency of the signal component, and altering the chemical-mechanical polishing process in response to the detected change. The invention also provides an apparatus for carrying out the aforementioned method.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with a polishing cloth mounted on an upper surface thereof, and a top ring for holding a workpiece and pressing the workpiece against the polishing cloth under a first pressing force to polish the workpiece. The top ring has a recess defined therein for accommodating the workpiece therein. A presser ring is vertically movably disposed around the top ring, and is pressed against the polishing cloth under a variable second pressing force. The first and second pressing forces are variable independently of each other, and the second pressing force is determined based on the first pressing force. Relative rotation between the top ring and the presser ring is achieved during polishing.

Abstract: Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished.

Abstract: The present invention provides exemplary methods, systems and apparatus that provide improved substrate characteristics after grinding operations by avoiding or reducing overgrind damage to the wafers. In one embodiment, a grinding apparatus (100) includes a first spindle (110) having an eccentric-shaped abrasive matrix (112) coupled thereto and a second spindle (116) adapted to hold a substrate (118) to be ground. The second spindle is offset from said first spindle such that the abrasive matrix passes through the substrate surface center (134) for only a portion of the time during grinding operations.

Abstract: A polishing process monitoring apparatus of a semiconductor wafer is provided, which is capable of monitoring correctly the process independent of various factors affecting optical measurement, such as the configuration, material, and size of a layered structure on the wafer, and the geometric shapes of patterns and their arrangement for respective semiconductor chips.

Abstract: A workpiece holder for polishing comprising a workpiece holder body which is provided with multiple perforated holes for holding a workpiece by vacuum suction and a holder back plate which is closely contacted with a back face of the holder body and has grooves for vacuum, wherein the holder back plate is composed of a synthetic resin and has an Asker C hardness of 70 or higher but lower than 98, and an apparatus for polishing a workpiece and a method for polishing a workpiece utilizing it. By improving the material of holder back plate of a workpiece holder for polishing that holds a workpiece by vacuum suction to enhance sealing with the holder body, thereby developing such a holder back plate that should not transfer deformation of the holder body to the workpiece surface, even if polishing agent slurry is introduced and solidified, to provide a workpiece holder for polishing having a workpiece holding surface of high precision, an apparatus for polishing a workpiece and a method for polishing a workpiece.

Abstract: A carrier head for a chemical mechanical polishing apparatus a flexible membrane that applies a load to a substrate in a loading area with a controllable size. One pressurizable chamber in the carrier head controls the size of the loading area, and another chamber controls the pressure applied to the substrate in the loading area.

Abstract: An abrasive machine is capable of solving the liquation of metal ions, and improving abrading accuracy. In the abrasive machine, an abrasive plate has an abrasive face capable of abrading a wafer. A holding section includes: a head member located above the abrasive face; a holding plate provided between the head member and the abrasive face, the holding plate having a holding face capable of holding the wafer; and a bellows fixed between the holding plate and the head member, the bellows allowing the holding plate to move close to and away from and incline with respect to the head member, the bellows forming a pressure chamber. Pressing means presses the wafer onto the abrasive face, with the holding plate, by pressurizing the pressure chamber. The bellows is made by cutting a block of plastic without forming seams.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane that applies a load to a substrate. A central portion of the flexible membrane is formed of a first material with a different rigidity than a second material that forms the annular portion of the flexible membrane.

Abstract: In a chemical-mechanical polishing machine (101) where a polishing head (100) holds a wafer (150) against a polishing pad (140), a retaining ring (300) that surrounds the wafer (150) has an open chamber (350) to distribute pressurized slurry (144) to the polishing pad (140) and to the periphery (153) of the wafer (150).

Abstract: The present invention provides an apparatus for performing mechanical polishing of a semiconductor wafer surface, including a polishing pad having a polishing face. The polishing pad includes a first member defining a first polishing surface and comprising a structurally degradable abrasive first material, and a surface abrasion impeding second member defining a second polishing surface and comprising a second material that is less degradable and less abrasive than the first material. The apparatus also includes a wafer support having a support surface. The wafer support is disposed opposite to the pad, such that the polishing face and the support surface are substantially parallel and can be brought within close proximity.

Abstract: A polishing apparatus has a guide (5) to be pressed against a polishing cloth (7) when polishing an object (1). Within the guide, a ring (3) is arranged between a backing plate (4) and a backing film (2). When the guide and polishing cloth are rotated to rub with each other, force of the periphery of the object of pressing the polishing cloth drops. The ring prevents such a force drop, thereby equalizing polishing rates over a surface of the object. Also provided is a polishing method applied to the polishing apparatus.

Abstract: A polishing apparatus can produce a uniform quality of polished products by supplying a polishing solution consistently without being affected by any disturbances in the solution supply source. The polishing apparatus comprises: a polishing section for polishing a workpiece by pressing the same against a polishing tool; a solution piping assembly to be connected to an external solution supply device for transferring a polishing solution therefrom to the polishing section; and a solution suction device provided in the solution piping assembly for introducing the polishing solution from the solution supply device to the polishing section at a desired flow rate.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish by a combination of chemical polishing and mechanical polishing. The polishing apparatus includes a turntable with a polishing cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the polishing cloth, and a dressing tool for dressing the polishing cloth on the turntable. The polishing apparatus further includes a cover which covers an upper surface of the turntable for preventing liquid on the turntable from being scattered, and inserting holes formed in an upper wall of the cover for inserting the top ring and the dressing tool therethrough.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: A carrier head for chemical mechanical polishing that has a base having at least a portion formed of a polymer, a mounting assembly connected to the base having a surface for contacting a substrate, a retainer secured to the portion of the base to prevent the substrate from moving along the surface, and a dampening material secured between the retainer and the base.

Abstract: In the wafer polishing apparatus for pressing a wafer against a polishing pad with an air bag, which is provided to a carrier, pressing area regulating members are attached to the bottom face of the carrier, whereby areas for pressing the wafer with the air bag are regulated. The pressing area regulating members are prepared in order to regulate different areas to be pressed. The areas for pressing the wafer with the air bag can be changed by replacing the pressing area regulating members when suitable.

Abstract: A composition and method of construction and use therefor in chemical-mechanical polishing (“CMP”) of one or more substrate assemblies is described. More particularly, a polishing solution comprising etchant, abrasive particles, and surfactant and methods of mixing to form and to dispense the polishing solution are described. One or more of the etchant, abrasive particles, and/or surfactant may comprise a liquid medium. Etchant, surfactant or abrasive particles may be premixed, mixed in-situ (“point of use mixing”), or any combination thereof. The surfactant may be ionic or nonionic. In particular, a polyoxyethylene may be used, and more particularly, a polyoxyethylene ester or ether may be used.

Abstract: An apparatus main body has a surface plate, a vertical shaft and an arm coupled to the vertical shaft such that it can move in the vertical direction. A spline shaft is attached to the arm such that it can move in the vertical direction. A keeper for holding a workpiece is attached to the lower end of the spline shaft. A reference position sensor for detecting the position of the top surface of a reference base as a reference position and a workpiece dimension sensor for detecting the position of the top surface of the keeper as a position associated with a dimension of the workpiece are attached to the arm. During a process on the workpiece, the absolute dimension of the workpiece is recognized based on information detected by the sensors, and the processing operation is controlled such that the dimension will become a desired value.

Abstract: An apparatus 1 for polishing wafers in which a first pushing means 50 for imparting a pushing force to a carrier 20 is arranged along the outer peripheral portion under the lower surface of a head body 40, and a second pushing means 60 for imparting a pushing force to a retainer ring 30 is arranged at a central portion under the lower surface of the head body. The first and second pushing means are formed of air bags 51 and 61.