Abstract: A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

Abstract: A carrier head for a chemical mechanical polishing system includes a flexible membrane with a substrate receiving surface, a sensor mechanism to determine if a substrate is properly attached to the carrier head, and means for preventing fluid that may be located between the substrate and the flexible membrane from interfering with the substrate detection mechanism.

Abstract: A wafer polishing apparatus for polishing a semiconductor wafer. The polisher comprises a base, a turntable, a polishing pad and a head drive mechanism for driven rotation of a polishing head. The polishing head comprises a sealing ring adapted to hold at least one wafer for engaging a front surface of the wafer with a work surface of the polishing pad. The sealing ring allows for application of uniform air pressure over the rear surface of the wafer. The sealing ring is constructed so that the wafer itself defines a portion of a pressure cavity receiving pressurized air.

Abstract: Apparatus and methods for substantial planarization of solder bumps. In one embodiment, an apparatus includes a planarization member engageable with at least some of the plurality of outer surfaces to apply a planarization action on one or more of the outer surfaces to substantially planarize the plurality of outer surfaces, and a securing element to securely position the bumped device during engagement with the planarization member. Through application of “additive” and/or “subtractive” processes, the solder balls are substantially planarized.

Abstract: A polishing apparatus can strictly control the degree of material removal by providing close control over the operating temperature in the polishing table (12). The polishing apparatus has a polishing table (12) and a workpiece holder (14) for pressing a workpiece (W) towards the polishing table (12). The polishing table (12) has a polishing section (30) or a polishing tool attachment section at a surface thereof and a thermal medium passage (32) formed along the surface. The thermal medium passage (32) has a plurality of temperature adjustment passages provided respectively in a plurality of temperature adjustment regions which are formed by radially dividing a surface area of the polishing table (12).

Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a generally linear polishing sheet having an exposed portion extending over a top surface of the platen for polishing the substrate, and a drive mechanism to incrementally advance the polishing sheet in a linear direction across a top surface of the platen. The apparatus includes a hydrophobic layer for substantially preventing aqueous liquid which penetrates under the polishing sheet from wetting a lower surface of the polishing sheet. The polishing sheet is releasably secured to the platen to rotate with the platen, and it has a width greater than a diameter of the substrate.

Abstract: A work piece carrier head for a CMP or other polishing apparatus is configured to eliminate the slow band associated with the polishing of the surface of a work piece. The carrier head includes a wear ring that is positioned circumferentially about the work piece and that together with the work piece is pressed against a moving polishing pad. The wear ring is resiliently coupled to the body of the carrier head in a manner to avoid any overturning moment on the ring caused by the frictional force of the polishing pad against the wear ring.

Abstract: A method for polishing wafers includes providing a wafer having a process layer formed thereon; providing a polishing tool having a plurality of control zones and being adapted to polish the process layer based on an operating recipe, the operating recipe having a control variable corresponding to each of the control zones; measuring a pre-polish thickness profile of the process layer; comparing the pre-polish thickness profile to a target thickness profile to determine a desired removal profile; determining values for the control variables associated with the control zones based on the desired removal profile; and modifying the operating recipe of the polishing tool based on the values determined for the control variables. A processing line includes a polishing tool, a metrology tool, and a process controller. The polishing tool is adapted to polish a wafer having a process layer formed thereon based on an operating recipe.

Abstract: A chemical mechanical planarization system and methods for implementing infrared detection of process state and substrate surface composition are provided. In one example, the chemical mechanical planarization system includes a substrate chuck to hold and rotate a substrate, a preparation head mounted on a preparation carrier, and a conditioning head mounted on a conditioning carrier. The preparation head is configured to be applied against the substrate, overlapping at least a portion of the substrate of an area smaller than the entire surface area of the substrate. The system further includes an infrared sensor positioned over the substrate to sense infrared emissions from the surface of the substrate. Several examples of infrared sensors are provided including single point, scanning, and array infrared sensors. In another example, a method of determining process state and surface composition of a substrate using infrared sensing is provided.

Abstract: An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

Abstract: A polisher head backing film that resists slipping relative to a backing plate. In one embodiment, a polisher head backing film/backing plate assembly is provided. The backing film/backing plate assembly includes a backing film with a hole pattern as well as holding pins that protrudes from one of the film's surfaces. The backing film/backing plate assembly also includes a backing plate that has a corresponding hole pattern and receiving holes such that the hole patterns on the backing film and backing plate can be aligned. The receiving holes can receive the holding pins of the backing film such that when the hole patterns are aligned, the holding pins and the receiving holes are also aligned. The holding pins can thus be inserted into the receiving holes upon alignment such that the backing film is prevented from moving relative to the backing plate once the holding pins are properly inserted.

Abstract: A pedestal of a load-cup for supporting wafers loaded onto and being unloaded from a chemical mechanical polishing (CMP) apparatus includes a pedestal plate, and a pedestal film which extends over only a limited area at the upper surface of the pedestal plate. This area includes the regions directly around the fluid ports provided in the pedestal plate for vacuum-chucking the wafers and spraying deionized water. The pedestal plate may have a cross-shaped part, the entirety of which bears the fluid ports. The pedestal film may include annular members each extending around only a respective one of the fluid ports, or one or more members each extending radially around several of the fluid ports. By offering a rather limited contact area to the wafer supported on the pedestal, the pedestal film reduces the amount of contaminants which could be transferred to the wafer surface in contact therewith.

Abstract: Metallographic samples are cross-sectioned to inspect internal features of the samples and to determine the cause of component failures. In order to reach an area of interest that is to be inspected, the cross-sections undergo grinding. Conventional grinding techniques require that a metallographic sample be removed from the grinding apparatus and visually inspected in order to determine whether the area of interest has been reached. An improved grinding apparatus and method of grinding, images the sample while it is being ground so that grinding does not have to be interrupted in order to determine how far grinding has progressed. Real-time monitoring of the grinding process allows precision control of grinding of metallographic samples.

Abstract: An apparatus for polishing an object, includes (a) a rotatable circular polishing plate (11) having a polishing surface on which an object (12) is to be polished, (b) a pressurizer (21) which applies a pressure to an object (12) to make the object (12) contact with the polishing surface, (c) a first unit (13) which supplies polishing solution containing abrasive, to the polishing surface, (d) a dresser (23) which dresses the polishing surface, and (e) a second unit (14) which is located downstream of the dresser (23) and upstream of the first unit (13) in a direction of rotation of the polishing plate (11) and which has an absorption surface (31) through which the second unit sucks the polishing solution from the polishing surface, the absorption surface (31) being formed thereon with a plurality of pivots (35).

Abstract: A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.

Abstract: A wafer holder includes a mounting plate for mounting a wafer and having a plurality of fluid holes, a decompressor for absorbing the wafer toward the mounting plate while sucking air between the mounting plate and the wafer through the fluid holes, and a liquid supply unit for supplying a liquid toward the wafer to release the wafer from the wafer holder. The liquid has a specific resistance lower than the specific resistance of water.

Abstract: A polishing apparatus (100) and method for polishing and planarizing a substrate (105) is provided that achieves a high-planarization uniformity across the substrate, while providing a more efficient use of slurry. In one embodiment, the apparatus (100) includes a subcarrier (160) with a flexible member (185) attached to a lower surface (165) of it on which the substrate is held. The flexible member (185) has at least one hole (195) therein so that a pressurized fluid introduced between the flexible member and the subcarrier (160) directly presses the substrate (105) against a polishing surface (125) during operation. The number and size of the holes (195) are selected to provide sufficient friction between the flexible member (185) and the substrate (105) to cause it to rotate when a drive mechanism rotates the subcarrier (160).

Abstract: An apparatus for manufacturing a semiconductor device includes a rotatable spindle, a head detachably connected to the spindle, and a clamp for clamping outer circumferential surfaces of the spindle and the head to one another so that the head may be driven by the spindle. The clamp has an annular clamping frame sized to encircle the outer circumferential surfaces of the spindle and the head, a projection disposed on one end of the clamping frame, a lever pivotally connected to the other end of the clamping frame, and a fastener pivotally connected to the lever and configured to hook over the projection. Once the fastener is hooked over the projection, the lever is pivoted to force the ends of the annular clamping frame together and thereby produce a clamping force that secures the spindle and head to one another. The clamp can be manipulated easily and with a simple motion to clamp the head to the spindle. Also, the parts of the clamp generate little mechanical friction.

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract: Specific embodiments of the present invention are directed to a chemical mechanical planarization apparatus which comprises a platen assembly for holding an object to be planarized, and a polishing pad having a surface size at least as large as a surface size of the object, the polishing pad being movable relative to the object. A table has a surface supporting the polishing pad and including a plurality of grooves forming a patterned surface. In some embodiments, the grooves form a repeated pattern on the surface of the table. The pattern may include a plurality of platelets having the same shape and size. The platelets may be hexagonal and vertically compliant. The surface of the table is harder than the polishing pad.

Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a generally linear polishing sheet having an exposed portion extending over a top surface of the platen for polishing the substrate, and a drive mechanism to incrementally advance the polishing sheet in a linear direction across a top surface of the platen by a fixed distance each time the polishing sheet is incremented. The polishing sheet is releasably secured to the platen to rotate with the platen, and it has a width greater than a diameter of the substrate.

Abstract: Methods and apparatuses for analyzing and controlling performance parameters in planarization of microelectronic substrates. In one embodiment, a planarizing machine for mechanical or chemical-mechanical planarization includes a table, a planarizing pad on the table, a carrier assembly, and an array of force sensors embedded in at least one of the planarizing pad, a sub-pad under the planarizing pad, or the table. The force sensor array can include shear and/or normal force sensors, and can be configured in a grid pattern, concentric pattern, radial pattern, or a combination thereof.

Abstract: A polishing apparatus which attaches the semi-conductor wafers 5 to the polishing plate 4 for performing the polishing as applying pressure the polishing cloth with the semi-conductor wafers, is provided with a guide ring 7 disposed outside of the polishing plate for pressing the polishing cloth separately from the polishing plate, a retainer ring 8 provided at the lower end of the guide ring for contacting the polishing cloth, and a weight 9 detachably mounted on the upper surface of the guide ring for adjusting the pressure to the polishing cloth.

Abstract: An polishing apparatus consists of a piston which is fixed to the rotation axis, a ceramic plate which is oppositely arranged against the piston via a silicone gel, and a cylinder which houses these components. The wafer is attached on the bottom surface of a backing pad, and will be pressed and rotated by the piston in order to polish the surface thereof.

Abstract: A carrier head with a flexible member connected to a base to define a first chamber, a second chamber and a third chamber. A lower surface of the flexible member provides a substrate receiving surface with an inner portion associated with the first chamber, a substantially annular middle portion surrounding the inner portion and associated with the second chamber, and a substantially annular outer portion surrounding the middle portion and associated with the third chamber. The width of the outer portion may be significantly less than the width of the middle portion. The carrier head may also include a flange connected to a drive shaft and a gimbal pivotally connecting the flange to the base.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the same purpose.

Abstract: A wafer-polishing head which has an increased flexible membrane life and improved wafer polishing accuracy has a principal head 106 having a lower opening portion 106a with an approximately circular shape. A flexible membrane 2 which is positioned in the opening portion 106a of the principal heal head 106 for closing the opening portion 106a and for holding a wafer W at the underside of an inward peripheral portion 2a of the flexible membrane. A sealed pressurizing chamber 107 is formed by closing the opening portion 106a with the flexible membrane. A pressure regulator is provided for controlling the internal pressure of the pressurizing chamber 107. The flexible membrane 2 is thicker in an outer peripheral portion 2b thereof than in the inward peripheral portion 2a which holds the wafer.

Abstract: A multi-zoned carrier for a chemical-mechanical planarization (CMP) polishing device includes a center cell, a middle cell, and an outer cell. Each of the cells are in fluid communication with each other through multiple conduits equipped with flow restrictors. The combination of cells and conduits allows more uniformity and planarity to be achieved during the chemical-mechanical planarization (CMP) polishing process.

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A carrier head with a flexible member connected to a base to define a first chamber, a second chamber and a third chamber. A lower surface of the flexible member provides a substrate receiving surface with an inner portion associated with the first chamber, a substantially annular middle portion surrounding the inner portion and associated with the second chamber, and a substantially annular outer portion surrounding the middle portion and associated with the third chamber. The width of the cuter portion may be significantly less than the width of the middle portion. The carrier head may also include a flange connected to a drive shaft and a gimbal pivotally connecting the flange to the base.

Abstract: A chemical mechanical polishing apparatus polishes the surface of a substrate to remove material therefrom. The apparatus includes a carrier, which positions the substrate against the rotating polishing pad. The carrier includes an integral loading member therein, which controls the load force of the substrate against the polishing pad. Multiple substrates may be simultaneously polished on a single rotating polishing pad, and the polishing pad may be rotationally oscillated to reduce the likelihood that any contaminants are transferred from one substrate to another along the polishing pad. A multi-lobed groove in the polishing pad may be used, in conjunction with a moving substrate, to polish the surface of the substrate.

Abstract: A method and apparatus for improving uniformity of the rate of removal of material from the surface of a semiconductor substrate by chemical mechanical polishing. In accordance with the invention, the semiconductor substrate is subjected to a combination of polishing motions, including orbital motion, and at least one additional polishing motion selected from rotational, oscillating, sweeping, and linear polishing motions. The invention also provides an improved method for conditioning polishing pads to provide more uniform conditioning and to extend their useful life span.

Abstract: A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.

Abstract: An apparatus for chemically and mechanically planarizing a workpiece surface employs a polishing slurry and a microreplicated pad having a surface for planarizing the workpiece surface in the presence of the slurry. The surface of the microreplicated pad has a regular array of structures having a sharp distal apexes which contact the workpiece surface during planarization and which are subject to ablating during planarizing thereby becoming substantially blunt. The workpiece moves in a rotational, orbital or translational motion relative to the microreplicated pad.

Abstract: An apparatus, and particularly, a wafer carrier for polishing the face of a semiconductor wafer are provided. The wafer carrier forms a first cavity which can be pressure controlled to vary the shape of a face of a platen which contacts the wafer during polishing. A second cavity within the first cavity is provided. The second cavity can be independently pressure controlled to form a vacuum for holding the wafer against the platen surface or for forming a pressure stream to separate the wafer from the platen and/or to purge the holes in the surface of the platen. A non-contact displacement sensor capable of measuring a distance between the wafer carrier mount and the platen, may be provided. An endpoint detector capable of detecting a relative surface roughness of the wafer, to determine when the wafer has been sufficiently polished, may also be provided. A ring is peripherally located about an outer edge of the platen, and is mounted and positioned to resist lateral forces on the wafer during polishing.

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract: A lightweight, carrier for wafer-like objects, including semiconductor wafers, is provided. The carrier may be used to secure and position a wafer during various polishing processes. The improved design of the lightweight carrier includes a relatively high number of ribs and an annular flange having an annular protrusion to provide uniform load onto the wafer during polishing operations. The relatively lower weight of the carrier facilitate manual loading and unloading of it (the carrier) into and from the polishing machine.

Abstract: A carrier head with a housing, a lower flexible membrane that defines a first chamber, an upper flexible membrane that defines a second chamber, and a pressure distribution assembly positioned between the upper flexible membrane and the lower flexible membrane. A lower surface of the lower flexible membrane provides a substrate mounting surface, and a portion of the upper flexible membrane can be biasable into contact with an upper surface of the lower flexible membrane. The pressure distribution assembly can include an upper surface in contact with the upper flexible membrane and a lower surface in contact with the lower flexible membrane. The pressure distribution assembly can be configured to transfer pressure from a portion of the upper flexible membrane to a more concentrated region of the substrate.

Abstract: A polishing apparatus includes a plurality of polishing fluid supply openings terminating in the polishing surface of a polishing table, and a plurality of grooves which are formed in the polishing surface and arranged so as not to be in direct communication with the polishing fluid supply openings. The polishing apparatus further includes a polishing fluid supply system for supplying a polishing fluid to the surface of the substrate through the openings. The grooves may extend at right angles so as to define a plurality of lands therebetween, and the polishing fluid supply openings are formed through the lands.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: Disclosed is a polishing head of a chemical and mechanical polishing apparatus uniformly polishing a wafer. The polishing head has a body defining at least one air passage therein through which air is introduced into and exhausted from the polishing head. The body is movable upward and downward. An air pressure distributing member is mounted to a lower portion of the body for distributing a pressure of the air supplied through the air passage. A membrane is mounted to enclose a lower surface of the air pressure distributing member so as to be expanded and shrunk by the pressure of the air supplied through the air pressure distributing member. A surface of the air pressure distributing member makes contact with a back surface of a wafer. An air pressure compensating member makes uniformly the pressure that is applied to central and edge portions of the wafer which makes contact with the membrane.

Abstract: In the wafer polishing device, a retainer ring can be attached and detached with ease. Under a retainer ring attaching part disposed on a head body, a retainer ring is attached with a snap ring. The snap ring is divided into two. An upper projection part and a lower projection part are formed on the inner periphery of the snap ring. The upper projection part is fitted to an upper groove formed on the outer periphery of the retainer ring attaching part, and the lower projection part is fitted to a lower groove formed on the outer periphery of the retainer ring. In attachment, the retainer ring is connected to the lower part of the retainer ring attaching part, and the snap ring is placed on the outer periphery of the joint.

Abstract: A chemical mechanical polishing machine is provided with a platen that has an integral sub-pad. A fixed abrasive polishing layer is mounted, without adhesive between the polishing layer and the sub-pad, to the top surface of the platen and the sub-pad. The polishing layer is vacuum mounted, for example, to the integral sub-pad of the platen. A cooling arrangement is provided in the platen that cools the polishing layer and improves product quality.

Abstract: A wafer polishing tool is disclosed which includes a polishing platen which is rotatable about a central platen axis, and a wafer carrier which supports a wafer for rotational movement to cause a portion of a surface of the wafer to only intermittently contact a polishing surface of the platen while the wafer rotates. The polishing tool may include a plurality of vertically stacked polishing platens which are rotatable about a central platen axis, and a plurality of stacked wafer carriers, wherein each carrier supports a wafer for rotational movement and vertical movement into contact with one of the polishing platens. During polishing, the carrier pack maintains the wafers in uninterrupted contact with the platen over less than entire surfaces of the wafers.

Abstract: A chemical mechanical polishing (CMP) machine (20) includes a workpiece carrier assembly (22) having a carrier base (24) with a workpiece contacting side (26) for holding a first surface (30) of a workpiece (32). A method utilizing the CMP machine (20) to polish the workpiece (32) and achieve a minimal edge exclusion region (92) entails adapting the carrier base (24) to reduce a first diameter (53) of a workpiece contacting side (26) of the carrier base (24) to a second diameter (84). The method further calls for providing a retainer ring (68, 106) disposed concentrically on the carrier base (24) for retaining the workpiece (32), and applying pressure on the carrier base (24) to urge a second surface (34) of the workpiece (36) against a polishing pad (36) of the CMP machine (20).

Abstract: A method for CMP polishing with a first step slurry composition selective to a metal in a metal layer to remove the metal at a high removal rate during polishing, and a second step slurry composition selective to a barrier film and least selective to either of an underlying dielectric layer or a metal interconnection structure in the dielectric layer, to remove the barrier film at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the interconnection structure.

Abstract: The present invention is a workpiece holder for polishing comprising at least a workpiece holder body having multiple perforated holes for holding a workpiece by vacuum adsorption and a back plate disposed on the back side of the body, which is provided with temperature controlling means or cooling means for the holder body. Thus, there is provided a workpiece holder for polishing, a polishing apparatus and a polishing method, which can provide a workpiece having good flatness by suppressing thermal deformation of the workpiece holder body and deformation of a resin film coated on the workpiece holding surface without degrading flatness of a workpiece held on the workpiece holder in the polishing of the workpiece, even when the number of polishing operation increases.

Abstract: A carrier head assembly of a substrate polishing apparatus and a substrate supporting carrier pad is disclosed. A down force is uniformly distributed over the backside of the substrate by the carrier pad adapted to be internally pressurized by the down force.

Abstract: A retaining ring of a wafer carrier includes a polymer containing abrasives. The abrasives can be released from the polymer by the friction between the polymer and the polishing pad. Therefore, it is convenient to maintain the wafer and is possible to prevent abrasives from aggregating in the polishing slurry. Meanwhile, the time for replacing the polishing slurry can be reduced and the polishing operation as a whole can be simplified so as to reduce the cost and promote productive efficiency.