Abstract: The present invention is a polishing pad conditioning head for a CMP and similar types of apparatus that is especially useful in conditioning the surface of fixed-abrasive CMP polishing pads to maintain optimal process conditions for the planarization process on dielectric and metal films on semiconductor wafers, as well as wafers and disks used in computer hard disk drives. The polishing pad conditioning head comprises a substrate and a layer of fine-grain chemical vapor deposited polycrystalline diamond that is bonded onto the substrate. Alternatively, a thin sheet of polycrystalline diamond may be deposited on a preferred growth substrate by a chemical vapor deposition process, then removed from the growth substrate and then bonded to the CMP conditioning disk substrate.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.

Abstract: An apparatus and method for planarizing a substrate are provided. The apparatus (101) includes a subcarrier (354) having an outer surface (378) with an annular first membrane (376) coupled thereto. The first membrane (376) has a receiving surface (380) adapted to receive the substrate (356) thereon, and a lip (382) adapted to seal with a backside of the substrate to define a first chamber (384) therebetween. A second membrane (386) positioned above the first membrane (376), and coupled to the subcarrier (354) defines a second chamber (388). During a polishing operation pressurized fluid introduced into the second chamber (388) causes it to expand outward to exert a force on a portion of the backside of the substrate (356), thereby pressing a predetermined area (392) of the surface of the substrate against the polishing pad. The predetermined area (392) is directly proportional to the pressure of the fluid introduced into the second chamber (388).

Abstract: A polishing material for chemical mechanical polishing has a mesh of fibers and a binder material holding the fibers in the mesh. The binder material coalesced among the fibers to leave pores in the interstices between the fibers of the mesh. The fibers and binder material provide the polishing material with a brittle texture. The fibers can be cellulose, and the binder material can be a phenolic resin.

Abstract: The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: An invention is disclosed for improved performance in a CMP process using a pressurized membrane as a replacement for a platen air bearing. In one embodiment, a platen for improving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process.

Abstract: The invention provides a method of polishing a nickel-containing substrate comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising an abrasive, a polishing pad, or both an abrasive and a polishing pad, a silver salt comprising a silver ion, and a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate. The invention further provides a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) a liquid carrier, (c) a silver salt comprising a silver ion, and (d) a secondary oxidizing agent, wherein the amount of the silver ion is about 0.1 wt. % to about 3 wt. % and the wt. % amount of the secondary oxidizing agent is about 3 times or less than the wt. % amount of the silver ion, based on the weight of the liquid carrier and anything dissolved or suspended therein.

Abstract: A polishing head and a chemical mechanical polishing apparatus having the polishing head including a plate having vacuum holes for transferring vacuum pumping force; a porous film having holes corresponding to the vacuum holes and attached to a lower surface of the plate; a retainer ring attached to the lower surface of the plate at an edge portion thereof and having a sloped surface; a clamp ring attached to the lower surface of the plate adjacent the retainer ring for clamping the retainer ring; an adjusting ring having a sloped surface parallel and in contact with the sloped surface of the retainer ring, the adjusting ring being installed between the retainer ring and the plate; and a diameter adjusting device for adjusting a diameter of the adjusting ring by moving the adjusting ring along the sloped surface of the retainer ring, thereby adjusting a height of the retainer ring.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion. A shim can be inserted between the retaining ring and a base of the carrier head to improve the retaining ring lifetime. A seal may be inserted between the retaining ring and a flexible membrane to seal the chamber between the flexible membrane and the base.

Abstract: A method includes providing at least one wafer having a process layer formed thereon. A surface of the process layer is polished using a first polishing process that is comprised of a slurry and a first polishing pad. The slurry is removed from the surface of the process layer. The surface of the process layer is planarized using a substantially slurryless second polishing process that is comprised of a second polishing pad that is more abrasive than the first polishing pad. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon. The polishing tool is a adapted to polish a surface of the process layer using a first polishing process that is comprised of a slurry and a first polishing pad and remove the slurry from the surface of the process layer.

Abstract: A polishing pad for a chemical mechanical planarization or polishing (CMP) system has a polish rate responsive to the pad contact area and the pad contact dynamics. The pad contact area is characterized by a predetermined statistical distribution. The pad contact dynamics are characterized by a mechanical behavior.

Abstract: A method for controlling wafer uniformity in a polishing tool includes providing a plurality of carrier heads, determining a signature for each of the carrier heads, and installing carrier heads with similar signatures in a polishing tool. A processing line includes a polishing tool and a processing tool. The polishing tool is adapted to polish wafers. The polishing tool includes a plurality of carrier heads, each carrier head having a polishing signature similar to the other carrier heads. The processing tool is adapted to process the polished wafers in accordance with a recipe. At least one parameter in the recipe is based on the polishing signatures of the carrier heads.

Abstract: A wafer carrier (300) for a CMP tool is adjustable to provide center fast to edge fast material removal from a semiconductor wafer. The wafer carrier (300) holds the semiconductor wafer without vacuum. The semiconductor wafer is held by a carrier ring (308). An elastically flexed wafer support structure (318) is a support surface for the semiconductor wafer. Elastically flexed wafer support structure (318) can be bowed outward or bowed inward in an infinite number of different contours. The semiconductor wafer conforms to the contour of the elastically flexed wafer support structure (318) when a down force is applied to the wafer carrier (300) during a polishing process. Changing the contour is used to produce different material removal rates across the radius of the semiconductor wafer to increase wafer planarity in a polishing process.

Abstract: A chemical mechanical planarization (CMP) system having a polishing pad, a carrier plate and a wafer plate is provided with an active gimbal. The active gimbal is defined by a circular hollow ring having a wall thickness and a diameter. The circular hollow ring is configured by an elastomeric material for placement in a space between the carrier plate and the wafer plate, and the space preferably is defined in part by a cavity tightly receiving the ring. The circular hollow ring is filled with a gel-like material that flows from one portion of the ring that is squeezed and deformed when the wafer plate tilts relative to the carrier plate. The flow is to another portion of the ring that returns to an original configuration during such tilting. Methods of making the gimbal include operations for selecting materials for the hollow ring and the gel-like material.

Abstract: The frame of a polishing machine has a disc-shaped polishing table mounted thereon for rotation coaxially about a vertical axis, the table having thereon an upper, generally planar polishing surface for removably supporting thereon a plurality of annular workpiece carriers for rotation therewith and for rotation about their repsective axes relative to the table. The outer peripheral surface of each carrier is disposed to be engaged at angularly spaced points thereabout by a pair of rollers mounted on the frame for rotation about spaced, vertical axes. The output of a single AC electric motor is connected to the table to effect rotation thereof about its vertical axis, and to one roller of each pair thereof to drive the one roller about its axis. The one roller of each such pair thereof is in driving, rolling engagement with the carrier engaged thereby, while the other roller of such pair is rotated by the engaged carrier.

Abstract: A method and apparatus for releasably attaching a planarizing medium, such as a polishing pad, to the platen of a chemical-mechanical planarization machine. In one embodiment, the apparatus can include several apertures in the upper surface of the platen that are coupled to a vacuum source. When a vacuum is drawn through the apertures in the platen, the polishing pad is drawn tightly against the platen and may therefore be less likely to wrinkle when a semiconductor substrate is engaged with the polishing pad during planarization. When the vacuum is released, the polishing pad can be easily separated from the platen. The apparatus can further include a liquid trap to separate liquid from the fluid drawn by the vacuum source through the apertures, and can also include a releasable stop to prevent the polishing pad from separating from the platen should the vacuum source be deactivated while the platen is in motion.

Abstract: A substrate polishing scheme (apparatus and method) is described according to which a polishing surface of a polishing sheet is driven in a generally linear direction by a drive mechanism, a surface of a substrate is held against the polishing surface of the polishing sheet by a polishing head, and the substrate is probed through the polishing sheet by a monitoring system.

Abstract: A method for controlling a process in a multi-zonal processing apparatus and specifically for determining the optimum values to set for processing parameters J(Zi) in each of the zones of that apparatus includes processing a test work piece in the apparatus with initial values Jl(Zi) of the parameters in each zone i to achieve a process result Ql(x). Then a process result Qf(x) to be expected from incremental changes in the parameters to values Jf(x) is calculated. The expected process results Qf(x) are related to the initial process results Ql(x) by the relationship: Qf(x)=Ql(x)*Jf(x)/Jl(x). After determining optimum values of J(Zi) to reduce the difference between the expected process result and a target process result, a work piece is processed through the process apparatus using those optimum values of J(Zi).

Abstract: A processing machine including a movable support which can mount either one of a processing part and a workpiece and which can reciprocate between a first position and a second position, and a reciprocating part for reciprocating the movable support. A protective part is provided on the upstream side and/or downstream side of the movable support. The protective part includes at least one protective member with a synthetic resin sheet or a film that can be kept rolled in a free state when tensile force is not applied to the protection member and unrolled when tensile force is applied to the member. The protective member is rolled and unrolled by forward and backward movement of the movable support.

Abstract: A diaphragm for a chemical mechanical polisher is composed of a rubber layer and a fiber layer. The size and shape of the diaphragm are suitably designed according to a gap and relative shifting between the rotary unit and holder to prevent creasing of the diaphragm and thereby decrease friction with a sidewall of the rotary unit and holder. The fibrous layer can improve the strength of the diaphragm in order to improve the lifetime of the diaphragm, reduce the frequency of maintenance of the polisher, and increase throughput.

Abstract: A polishing head for holding a wafer during a polishing process without the edge-effect or the edge peeling defect and a method for improving edge profile on a wafer during a polishing process are described. The polishing head is constructed by a carrier head, a retaining ring, and at least three piezoelectric actuator/sensors mounted in-between a recessed peripheral edge portion of the carrier head and a top surface of the retaining ring.

Abstract: A polishing apparatus is used for polishing a surface of a workpiece such as a semiconductor wafer or a glass substrate. The polishing apparatus comprises a polishing table having a polishing surface thereon, a plurality of workpiece holders each for holding a workpiece and pressing the workpiece against the polishing surface, and a controller for controlling the workpiece holders individually so that polishing operations of the workpiece holders are controlled independently of each other.

Abstract: The inner circumferential surface of through holes in a metal plate is chamfered or put to anchor fabrication and a thermoplastic resin is injection molding to the inner circumferential surface of the through hole thereby forming a resin portion over the entire surface of the through hole and the resin portion is removed by grinding while leaving the peripheral portion of the resin portion thereby forming a polished work holding hole. Thus, when a resin portion is formed to the inner circumference of the holding hole in a polished work holder comprising a metal plate, the production is high and the cost is reduced, and the resin portion is not detached from the bonding portion with no use of the adhesive.

Abstract: The present invention provides a dual purpose workpiece handoff station for intermediately staging a semiconductor wafer, or other workpiece, being transferred between processing stations in, for example, a Chemical-Mechanical Planarization (CMP) machine. The handoff station includes a workpiece processing surface; such as a polishing pad or buffing pad, defining a plurality of apertures for applying fluids, including water, chemicals, slurry, or vacuum, to the surface of a workpiece. In operation, a workpiece carrier moves a polished wafer from a primary polishing surface to the handoff station, and polishes, buffs, or cleans the wafer in the handoff station by rotating the wafer and oscillating the wafer across the handoff station polishing surface while pressing the wafer thereon.

Abstract: A polishing pad for use in a chemical mechanical polishing system is provided. The pad is mounted to a rotatable platen and comprises a polishing surface and a deflection surface which provides a desired degree of rigidity and compliance to the pad when brought into contact with a substrate. The deflection surface may comprise one or more passageways extending through the pad which vent to atmosphere. In one embodiment, the deflection area defines a raised area and a recessed area. The raised area provides a mounting surface for the platen while the recessed area allows for compliance of the pad. In another embodiment, the deflection area comprises a plurality of channels defining a plurality of slanted protrusions. The channels may be non-intersecting such that the slanted protrusions are elongated portions disposed on the pad. Alternatively, the channels may be intersecting such that the slanted protrusions are isolated from one another and are disposed on the pad in spaced relation.

Abstract: A polishing head of a polishing apparatus of this invention has a structure in which an air blast port is formed in a lower surface of a carrier 20, and an upper outer peripheral portion 24 of the carrier is so formed as to protrude in a diametric direction, and is placed on a retainer ring 30 to thereby form a seal portion 25. The retainer ring clamps a peripheral edge of a rubber sheet in such a form as to cover the carrier. Consequently, an air chamber 61 is formed between the carrier lower surface and the rubber sheet, and an air pressure of this air chamber pushes a wafer W to a polishing cloth 2.

Abstract: Apparatus and methods of automated wafer-grinding using grinding surface position monitoring. In one embodiment, an apparatus for grinding a working surface includes a grinding surface engageable with at least a portion of the working surface, and a feed mechanism that controllably adjusts a position of the grinding surface. The apparatus further includes a position sensor that senses a position of the grinding surface along an axis approximately normal to the working surface and a controller that receives a position signal from the position sensor and transmits a control signal to the feed mechanism in response to the position signal. In alternate embodiments, the position sensor may be an acoustic sensor, an optical sensor, or another type of sensor. The grinding surface may include a grinding material suspended in a binder, the grinding material being worn during grinding.

Abstract: A wafer carrier assembly (51) places a semiconductor wafer in angular compliance with a polishing media. The wafer carrier assembly (51) includes a first assembly and a second assembly. The second assembly inclines freely in any direction for providing angular compliance.

Abstract: An apparatus for conditioning the polishing pads of a chemical-mechanical polishing system includes a tool having a cutting tip and positioned almost perpendicular to the surface of the polishing pad arranged on a rotary surface table of the system. The apparatus also has a horizontal moving unit for moving the tool in a direction almost parallel to the surface of the polishing pad, a base unit positioned at a side of the rotary surface table and supporting the horizontal moving unit, and a vertical moving unit for adjusting a vertical position of the tool relative to the surface of the polishing pad. The conditioning apparatus precisely determines a target depth of cut in a polishing pad by moving the tool in a vertical direction, thus allowing the tool to precisely flatten the surface of the polishing pad during a conditioning process.

Abstract: An apparatus and method for detecting a process endpoint. The method includes receiving a first data signal and a second data signal and combining the first data signal and the second data signal to generate a combined data signal. The method also includes detecting a peak in the combined data signal, wherein the peak indicates the process endpoint. The apparatus includes a data collection unit capable of receiving a plurality of data signals and a signal analysis unit. The signal analysis unit is capable of combining the plurality of data signals received through the data collection unit to generate a combined data signal and identifying a peak in the combined data signal indicative of the process endpoint.

Abstract: Pads and methods of making the pads for applications such as polishing substrates and chemical mechanical planarization of substrates are provided. The pads are substantially porous and substantially hard for improved polishing and planarization properties. Pads according to some embodiments of the present invention have beneficial properties like those of standard technology porous pads and beneficial properties like those of standard technology hard pads.

Abstract: A chemical mechanical polishing apparatus has a plurality of electric machines for executing mechanical polishing motions, at least two control systems for controlling the mechanical polishing motions, at least two signal wires connected with the two control systems for transmitting signals of the two control systems, and a wave filter comprising two terminals connected with the two signal wires respectively for filtering out the signal whose voltage exceeds a predetermined value in the two signal wires.

Abstract: A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A system for controlling a polishing machine during polishing of a workpiece, such as a semiconductor wafer, includes a carrier which has an interface surface for engaging a workpiece and establishing ultrasonic coupling thereto. At least one crystal oscillator is ultrasonically coupled to the carrier and operates at a resonant frequency in an ultrasonic band which is indicative of a desired polishing depth of the workpiece, such as the endpoint of polishing. A detector circuit provides an output signal which is representative of an output level of the crystal oscillator. A processor circuit receives the signal from the detector circuit and provides a signal to the polishing machine when the amplitude of the signal from the detector circuit indicates that the desired polishing endpoint has been reached. A number of crystal oscillators can be spatially arranged on the carrier to establish a local polishing depth detection array.

Abstract: The apparatus and method for producing a substrate whose surface includes a metallic wire by polishing the substrate surface. A polishing liquid is supplied to a clearance between the substrate and the surface of a polishing pad. The polishing liquid includes an acid which dissolves the oxidized part of the substrate surface and is substantially free of solid abrasive powder. A relative movement is generated between the substrate surface and the polishing pad surface while the substrate surface is pressed against the polishing pad surface while the polishing liquid is supplied so that the dissolved oxidized part of the substrates surface can be removed from the substrate.

Abstract: An adjustable platen is provided. The adjustable platen includes a platen body having a top region and a bottom region. The platen body is oriented under a linear polishing pad of a CMP system. An air bearing is integrated with the platen body at the top region, and the air bearing is configured to apply an air pressure to an underside of the linear polishing pad. A set of bearings are connected to the bottom region of the platen body to enable controlled vertical movement of the top region of the platen body closer or further from the underside of the linear polishing pad depending on the applied air pressure. The applied air pressure is configured to exert a controllable force to the underside of the linear polishing pad. The force is controlled to meet a desired process parameters, while the carrier simply moves the wafer into position over the linear polishing pad.

Abstract: A linear drive mechanism for chemical mechanical polishing includes a substrate carrier and support system which employs at least one linear motor to drive the substrate carrier through polishing motions. An additional driver for driving at least a portion of the carrier in directions perpendicular to the motions supplied by the linear motor(s) is also included. A clamping flexure is provided to selectively lock the substrate carrier in a vertical position. The substrate carrier, in one embodiment is mounted to a vertical driver via a column. The column is guided by spiral flexures to prevent motion in directions normal to vertical. An air mount is provided to support the majority of the mass of the substrate carrier, so that only a small force need be applied by the additional driver for movements in the vertical direction. Another, linear drive mechanism is described as using a “Sawyer motor” for both polishing motions as well as vertical force application.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer, and has a sensor capable of continuously detecting the thickness of an electrically conductive layer. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding and pressing the substrate against the polishing surface to polish the surface of the substrate. A sensor such as an eddy-current sensor is disposed below the polishing surface of the polishing table for measuring the thickness of a conductive layer formed on the surface of the substrate.

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: Provided are a wafer polishing method in which, in single side polishing, covering a wafer holding surface (one side surface) with a protective film, a wafer polishing surface (the other side surface) is polished, so that the wafer holding surface can be prevented from being etched and contaminated by a polishing agent; a wafer cleaning method in which the protective film that remains behind on the wafer holding surface after polishing can be efficiently removed, and a waste cleaning solution is easily treated; and a wafer protective film that sufficiently covers the wafer holding surface in polishing but is effectively removed in cleaning.

Abstract: There is disclosed a polishing apparatus comprising: a polishing table having a first axis and a counterweight provided on the polishing table. The polishing table is adapted to be subjected to a circular orbital motion in which the first axis of the polishing table is rotated about an orbit center axis while the orientation of the polishing table is kept substantially constant. The counterweight cancels a centrifugal force generated by the circular orbital motion of the polishing table.

Abstract: Disclosed is a method of manufacturing polymer materials having properties that are determined by selected process conditions. The properties can be modified for a variety of applications. Exemplary applications are pads for chemical mechanical planarization of substrates and pads for polishing substrates. One embodiment of the method includes the steps of providing a polymer sheet having a substrate contacting area, heating the area a sufficient amount, and applying a sufficient amount of mechanical pressure to the area during at least a portion of the heating step to achieve the desired properties for the material.

Abstract: The present invention is an apparatus and method for planarizing a front surface of a wafer. The present invention may include a rigid platen, for supporting a polishing pad, connected to a supporting base that has means, or is connected to means, for orbiting the platen. A carrier, preferably a front-reference carrier with a plurality of individually controllable pressure areas, may be used to hold and press the wafer against the polishing pad while the supporting base orbits the rigid platen. The planarization process may be further optimized by orbiting the polishing pad in a radius smaller than 4 mm, orbiting the polishing pad faster than 400 orbits per minute or both.

Abstract: The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object comprises a pad having a polishing surface to be placed on a target surface of the object to be polished. A pad drive member is connected to the pad to move the pad relative to the object to change a position of the polishing surface of the pad on the target surface of the object. The pad comprises a backing material having a modulus of elasticity of at least about 300,000 psi. In specific embodiments, the pad includes grooves on the polishing surface. The pad has a thickness between about 0.05 and about 0.1 inch. The pad back material comprises a ceramic material. A compliant layer may be disposed between the pad and the pad drive member. The compliant layer comprises an elastomeric material.

Abstract: An apparatus for supplying a slurry to a polishing surface has a slurry source, a slurry supply line, and a slurry return line. The slurry supply line and slurry return line are configured so that slurry may be directed from the outlet of the slurry supply line onto the polishing surface during a chemical mechanical polishing operation, or into an inlet of the slurry return line after the polishing operation is stopped. This permits continuous circulation of slurry through the slurry supply line to prevent coagulation.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: A device (28) and method for detecting endpoints (Ep1, Ep2) of a chemical-mechanical polishing (CMP) process for semiconductor wafers (14). A carrier current signal driving a polishing carrier motor is received and detected, the carrier current signal is modified, and the modified carrier current is analyzed to detect at least one endpoint of the polishing process. The device (28) includes a detector (40), a logic circuit (42) and storage (44).