Abstract: Disclosed is a chemical mechanical polishing pad formed at a polishing surface thereof with micro-holes each having a desired cross-sectional area while having a desired depth. The shape, size, and density of the micro-holes can be optionally adjusted. The chemical mechanical polishing pad provides an effect of maintaining a desired polishing rate during a polishing process. In accordance with the present invention, the micro-holes can have diverse arrangements depending on given process conditions.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A polishing material for chemical mechanical polishing has a mesh of fibers and a binder material holding the fibers in the mesh. The binder material coalesced among the fibers to leave pores in the interstices between the fibers of the mesh. The fibers and binder material provide the polishing material with a brittle texture. The fibers can be cellulose, and the binder material can be a phenolic resin.

Abstract: A slurry delivery system for a chemical mechanical polisher, comprising a bag housing fitted with a slurry intake conduit and a slurry outlet conduit. An expandible and collapsible pump bag is provided in fluid communication with the conduits inside the bag housing, and the interior of the pump bag is sealed from the bag housing. As an air/vacuum controller withdraws air from the housing, the pump bag enlarges and slurry is drawn into the pump bag. As the air/vacuum controller subsequently introduces air into the housing, the pump bag collapses and the slurry is expelled from the pump bag through the slurry outlet conduit. A purge valve is provided upstream of the pump bag to remove air bubbles from the slurry and vent the air to the atmosphere.

Abstract: The frame of a polishing machine has a disc-shaped polishing table mounted thereon for rotation coaxially about a vertical axis, the table having thereon an upper, generally planar polishing surface for removably supporting thereon a plurality of annular workpiece carriers for rotation therewith and for rotation about their repsective axes relative to the table. The outer peripheral surface of each carrier is disposed to be engaged at angularly spaced points thereabout by a pair of rollers mounted on the frame for rotation about spaced, vertical axes. The output of a single AC electric motor is connected to the table to effect rotation thereof about its vertical axis, and to one roller of each pair thereof to drive the one roller about its axis. The one roller of each such pair thereof is in driving, rolling engagement with the carrier engaged thereby, while the other roller of such pair is rotated by the engaged carrier.

Abstract: A rotation force of a drive shaft is transmitted from a drive plate to an intermediate plate through a first pin, and a rotation force of the intermediate plate is transmitted to a carrier through a second pin. The rotation force of the drive shaft is transmitted to the carrier through an Oldham's coupling mechanism; thereby, a wafer polishing apparatus can always rotate the carrier in a stable condition even though a wafer receives a friction force in side directions from a polishing pad because no twisting force is applied to the drive shaft.

Abstract: Carrier assemblies, planarizing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces are disclosed herein. In one embodiment, the carrier assembly includes a head having a chamber, a magnetic field source carried by the head, and a fluid with magnetic elements in the chamber. The magnetic field source has a first member that induces a magnetic field in the head. The fluid and/or the magnetic elements move within the chamber under the influence of the magnetic field source to exert a force against a portion of the micro-device workpiece. In a further aspect of this embodiment, the carrier assembly includes a flexible member in the chamber. The magnetic field source can be any device that induces a magnetic field, such as a permanent magnet, an electromagnet, or an electrically conductive coil.

Abstract: A substrate holder is described which has a movable plate elastically mounted inside a main body. With the substrate holder, a polishing operation can be performed in two basic operation modes corresponding to two different vertical end positions of the movable plate. In a first (downward) mode the movable plate stays in mechanical contact with the substrate whereas in a second (upward) mode an air cushion is generated in a chamber between the movable plate and the substrate for pressurizing the substrate onto the polishing pad.

Abstract: Microelectronic devices including a layer of germanium and selenium, optionally including up to 10 atomic percent silver, show promise for select applications. Manufacturing microelectronic devices containing such layers using conventional CMP processes presents some significant challenges. Embodiments of the invention provide methods of planarizing workpieces with Ge—Se layers, many of which can be carried out using conventional CMP equipment. Other embodiments of the invention provide chemical-mechanical polishing systems adapted to produce planarized workpieces with Ge—Se layers or, in at least one embodiment, other alternative layers. Various approaches suggested herein facilitate production of such microelectronic devices by appropriate control of the down force of the Ge—Se layer against the planarizing medium and/or one or more aspects of the planarizing medium, which aspects include pH, abrasive particle size, abrasive particle hardness, weight percent of abrasive.

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: The present invention is directed toward carrier assemblies, planarizing machines with carrier assemblies, and methods for mechanical and/or chemical-mechanical planarization of micro-device workpieces. In one embodiment, a carrier assembly for holding a microelectronic workpiece comprises a head, a backing assembly in the head, and a barrier. The head includes a chamber, a pneumatic line in fluid communication with the chamber through which a pneumatic fluid passes, and a retaining member defining a perimeter portion of a workpiece cavity. The backing assembly is positioned in the head, and the backing assembly can include a plate in the chamber and a diaphragm on one side of the plate. The diaphragm defines a backside portion of the workpiece cavity. The barrier is positioned in the chamber and/or the pneumatic line. The barrier is configured to inhibit contaminants from back-flowing into at least a portion of the pneumatic line.

Abstract: A wafer carrier structure for a chemical-mechanical polishing device. The wafer carrier structure includes a holder and a slurry supply pipeline. The slurry supply pipeline is attached to the side of the holder such that a portion of the supply pipeline near the outlet end is either parallel or perpendicular to the sidewall of the holder.

Abstract: A lapping method of a magnetic head slider provided with an element-forming surface, an ABS and an MR element formed on the element-forming surface, including a step of setting the magnetic head slider to be lapped on a lapping means, and a step of lapping by the lapping means the ABS of the magnetic head slider with while keeping an angle between the element-forming surface of the magnetic head slider and a lapping direction in a range greater than 0 degrees and equal to or less than 30 degrees.

Abstract: A polishing device is hermetically accommodated in a chamber containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device is altered into the composition different from the ambient air, and voltage is applied between a wafer and a polishing pad to polish the wafer with an electrolytic effect. The polishing device has the atmosphere containing extremely less oxygen, preventing a surface of the wafer from oxidation and thereby providing a constant polishing rate.

Abstract: A planatizing equipment has solid abrasive particles suspended in a liquid suspension. The solid abrasive particles have on their outer surfaces tiny, hard but brittle working edges and points. The liquid suspension medium and the solid abrasive particles have nearly the same density to prevent the brittle working edges and paints from sufficiently contacting and damaging each other. This significantly lengthens the useful life of the solid abrasive particles.

Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

Abstract: A wafer processing module is provided. In one example, the wafer processing module includes a sub-aperture CMP processing system and a pad exchange system including a pad magazine for storing CMP processing pads and a pad exchange robot for transferring CMP processing pads between the sub-aperture CMP processing system and the pad magazine. The wafer processing module includes a module frame that integrates the sub-aperture CMP processing system including the pad exchange system, with a wafer scrubber unit and a wafer SRD unit.

Abstract: A method for processing semiconductor wafers, which provides planarized surface in a well controllable manner and with high accuracy by processing a film with uneven surface, formed over a semiconductor wafer, within the area of a working surface with a diameter larger than that of said semiconductor wafer by not more than two times, and by processing the film with a polishing liquid supplied from a supply unit disposed on a vertically arranged working surface is disclosed. Additionally, high quality dressing of the working surface can be easily performed by virtue of the smaller diameter of the working surface. Furthermore, the vertical arrangement of the working surface makes possible ready compatibility with semiconductor wafers of enlarged diameters.

Abstract: The invention comprises copper chemical-mechanical polishing processes using fixed abrasive polishing pads, and copper layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasive pads. In one implementation, processes are described for pH's of 7.0 or greater. In one implementation, processes are described for pH's of 7.0 or less. In one implementation, a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 1% to 15% by volume, a copper corrosion inhibitor present at from about 0.01% to 2% by weight, and a pH of less than or equal to 7.0. In one implementation, a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 0.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A method to planarize the surface of a semiconductor substrate having shallow trench isolation (STI) reduces erosion of a silicon nitride planarization stop layer, reduces dishing of large areas of the shallow trench isolation, and prevents under polishing of the surface of the semiconductor substrate that will leave portions of the silicon dioxide that fills the shallow trenches covering the silicon nitride planarization stop exposed, is described. The method to planarize the surface of a semiconductor substrate having shallow trenches begins by chemical/mechanical planarization polishing at a first product of platen pressure and platen speed to planarize the semiconductor substrate. Polishing at a first product of platen pressure and platen speed will cause a high rate of material removal with low selectivity to increase production throughput. The silicon nitride stop layer will be examined to determine an end point exposure of the silicon nitride stop layer.

Abstract: A chuck means for flat workpieces, in particular semi-conductor wafer for the chemical-mechanical polishing, comprising a circular housing which is attached to a driving spindle for rotation therewith and has a top wall and an annular side wall, a retaining ring which forms the lower part of the side wall, a chuck plate of rigid, however elastically deformable material which has an upper and a lower side and a plurality of openings at the lower side as well which openings are in connection with radial and axial parallel passages in the chuck plate, the passages being in fluid connection with an axial passage in the spindle, the axial passage being connected to a vacuum and/or fluid source, the chuck plate being floatingly and vertically movably located in the housing, a plurality of pressure chambers above the chuck plate, the pressure chambers having lower wall portions which are yieldable and engage the upper side of the chuck plate, pressure manifold means which are connected with a fluid source under pres

Abstract: The present invention provides a deformable pad useful for chemical mechanical polishing (“CMP”), a CMP apparatus incorporating the deformable pad of the present invention, and methods for using the deformable pad and CMP apparatus of the present invention. The deformable pad of the present invention includes a plurality of solid supports which substantially eliminate the nonuniform polishing rates in known CMP processes and may be tailored to optimize a wide array of CMP processes. The CMP apparatus of the present invention incorporates a deformable pad of the present invention and may include several other known features, such as a polishing pad, a substrate carrier, mechanical assemblies for agitating the polishing pad or substrate carrier, etc.

Abstract: A belt wiper that can be used in a linear belt-type chemical mechanical planarization (CMP) system to maintain a belt pad is provided. The belt wiper mitigates disturbances within a detection region important to a belt pad steering system. Also, the belt wiper mitigates the obscuring of optical components important to operation of an endpoint detection system. Thus, the belt wiper, by wiping the underside of the belt pad will preserve the functionality of both the belt pad steering system and the endpoint detection system.

Abstract: Apparatus of carrier in a chemical mechanical polishing equipment comprises a carrier module for holding a wafer face down. A retaining ring and conditioning module is coupled to the carrier module, which is used for protecting the wafer edge against contact with a polishing pad in a deformed shape and executing a conditioning of the polishing pad. A first support module is coupled to the retaining ring and conditioning module, which is used for rotating, pressing down, and supplying conditioning chemicals for the retaining ring and conditioning module.

Abstract: A carrier head has a base, a flexible membrane, and a valve in the carrier head that forms part of a substrate detection system. The valve includes a valve stem that contacts an upper surface of the flexible membrane so that if a substrate is attached to the lower surface of the flexible membrane when the first chamber is evacuated, the valve is actuated to generate a signal to the substrate detection system.

Abstract: The problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon, is solved. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs.

Abstract: A semiconductor substrate having a Cu layer formed so as to fill wiring grooves formed in the substrate surface and to cover regions of the substrate surface where no wiring groove is formed is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer is polished to a predetermined thickness. Then, the semiconductor substrate is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer on the substrate surface is removed, except for portions of the Cu layer formed to fill the wiring grooves, and a barrier metal layer is also removed. Thus, the Cu layer on the substrate surface can be removed uniformly, and the Cu wiring portions formed in the wiring grooves can be planarly and uniformly polished without giving rise to problems of over-polishing such as dishing or erosion.

Abstract: An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

Abstract: A chemical mechanical processing apparatus includes a polishing pad capable to polish a substrate; a stepped retaining having an inner side, a bottom side, and an open region, the open region extending radially outward from the inner side and upward from the bottom side, the open region providing space for pad rebound, the open region further having a plurality of tips to hold a substrate in position during rotation of the substrate against the polishing pad, the stepped retaining ring capable to rotate the substrate against the polishing pad; and a dispenser capable to dispense a slurry onto the pad.

Abstract: In the wafer polishing apparatus for pressing a wafer against a polishing pad with an air bag, which is provided to a carrier, pressing area regulating members are attached to the bottom face of the carrier, whereby areas for pressing the wafer with the air bag are regulated. The pressing area regulating members are prepared in order to regulate different areas to be pressed. The areas for pressing the wafer with the air bag can be changed by replacing the pressing area regulating members when suitable.

Abstract: The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank.

Abstract: The invention is a slurry distribution system for controlling the distribution of slurry across a top surface of a polishing pad. The polishing pad may be supported by a platen and be part of a polishing station in a chemical mechanical polishing tool. Two juxtaposed perforated manifolds below the polishing pads are used as the primary means of controlling the distribution of slurry. A motor is used to rotate at least one of the perforated manifolds until a desired pattern of aligned perforations below the polishing pad has been achieved. By initially creating the perforations in each manifold in a particular pattern, many different patterns of aligned perforations may be obtained. Patterns may advantageously be made possible that have concentrations of aligned perforations in the center, middle and/or periphery of the manifolds. The polishing pad will have a slurry distribution corresponding to the concentration of aligned perforations in the manifolds.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad. An integral, but independently retractable and extendable retaining ring assembly is provided around the wafer backing member and wafer to uniformly and independently control the pressure of a wafer perimeter retaining ring on the polishing ad of a wafer polishing bed.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A polishing pad conditioning apparatus in a chemical mechanical polishing apparatus, wherein the conditioning apparatus includes a conditioning plate which maintains a predetermined relative velocity with respect to the polishing pad, extends from a center region near a rotation center of the polishing pad to a peripheral region near an edge of the polishing pad, and has a polishing portion with polishing particles embedded into its bottom surface, a force generating portion for applying a force to the conditioning plate so that the conditioning plate presses against the polishing pad with pressure that varies according to position on the polishing pad, and conditions the polishing pad by relative linear velocity and pressure with respect to the polishing pad, and a supporting portion for supporting the force generating portion. Therefore, fast and uniform conditioning of a polishing pad can be achieved.

Abstract: A semiconductor wafer is cleaned while a sponge or brush is pressed against the wafer with a constant forced applied utilizing a bias in a constant force pencil. The wafer is cleaned in the state wherein a collapsing portion of the constant force pencil with respect to the cleaning sponge cloth is set in such a way that the cleaning pressure, which is applied from the cleaning sponge to the wafer, can be constant and is adjustable. A method for cleaning wafers using a constant force pencil is also described.

Abstract: The present invention aims at make automatic real-time measurement of the removal rate in during polishing. For achieving the aim, a polishing system is provided with a sensor 1 for measuring a friction generated between a polishing pad and a workpiece during the polishing. The information processor of the polishing system evaluates the polishing efficiency of the polishing pad 5 on the basis of a fluctuation in the removal rate which is successively obtained from a friction successively detected by the sensor and a predetermined function. The result of the evaluation is used for the determination of the execution timing of a dressing process for the polishing pad, the calculation of the removal from the workpiece, and the like.

Abstract: Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: A carrier head with a flexible member connected to a base to define a first chamber, a second chamber and a third chamber. A lower surface of the flexible member provides a substrate receiving surface with an inner portion associated with the first chamber, a substantially annular middle portion surrounding the inner portion and associated with the second chamber, and a substantially annular outer portion surrounding the middle portion and associated with the third chamber. The width of the outer portion may be significantly less than the width of the middle portion. The carrier head may also include a flange connected to a drive shaft and a gimbal pivotally connecting the flange to the base.

Abstract: Method for abrading a work piece with a fixed load including a first abrading process in which pressure of a cylinder chamber of a cylinder unit suspending an upper abrasive plate is adjusted in order to apply first pressure to the work piece via the upper abrasive plate without applying the full weight of the upper abrasive plate and a second abrading process in which the pressure of the cylinder chamber is readjusted in order to to apply second pressure which is higher than the first pressure to the work piece via the upper abrasive plate without applying the full weight of the upper abrasive plate.

Abstract: A gimbal assembly that can be used in conjunction with semiconductor fabrication tools, such as chemical-mechanical polishing (CMP) tools, as well as other types of tools, is disclosed. A gimbal assembly may include a gimbal hub, a pivot head plate, a gimbal sleeve, and a gimbal post. The gimbal hub has an interior cavity. The pivot head plate has a ball head, a base, and an outer edge, where the based is situated in the bottom of the interior cavity. The gimbal sleeve is situated in the bottom of the interior cavity over the outer edge of the pivot head plate, securing the pivot head plate in place within the interior cavity. The gimbal post is situated over the ball head of the pivot head plate. The ball head of the pivot head plate preferably has dual diameters.

Abstract: A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.

Abstract: An optical window structure is disclosed. The optical window structure includes a support layer that has a reinforcement layer and a cushioning layer. In addition, the optical windows structure has a polishing pad which is attached to a top surface of the support layer. Furthermore, the optical window structure has an optical window opening and a shaped optical window. The shaped optical window at least partially protrudes into the optical window opening in the support layer and the polishing pad during operation.

Abstract: The present invention has an object to provide a retention plate used in a polishing device that mirror polishes semiconductor substrates such as silicon wafers, particularly a retention plate used with the hard chuck method, that can prevent roll-off, and can achieve a high improvement in flatness. According to the present invention, by means of using a retention plate of a constitution that is of a smaller diameter than that of the wafer and which gives a region in which the area of contact with the wafer is reduced by means of groove processing, or a porous structure and the like, on the outer peripheral part, a reduction of the processing pressure of the outer peripheral part becomes possible, and, because the polishing of the region in which roll-off occurs is delayed, the amount removed by polishing becomes uniform over the wafer surface, and high precision wafer processing becomes possible.

Abstract: Apparatuses and methods for planarizing a mnicroelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone.

Abstract: The invention provides a chemical-mechanical polishing machine for polishing a wafer of a material, the machine comprising a rotary polishing turntable, a polishing head comprising a non-rotary portion and a rotary portion, and means for delivering an abrasive to the surface of the polishing turntable. The machine is remarkable in the means for distributing the abrasive comprise a hollow abrasive delivery ring fitted with abrasive feed means, with a plurality of abrasive delivery orifices distributed over its bottom face, and fixing means enabling it to be secured to the non-rotary portion of the polishing head, the ring being disposed around the rotary portion in a plane that is substantially parallel to the plane of the polishing turntable, but that is spaced apart therefrom. The invention is applicable to polishing wafers of semiconductor material.

Abstract: The invention provides a polishing pad comprising sintered particles of a thermoplastic resin, wherein a surface of the polishing pad intended to contact a substrate to be polished comprises (a) a non-patterned portion with a substantially uniform density and (b) a patterned portion with one or more densities that differ from the density of the non-patterned portion. The invention also provides a method for producing the polishing pad, a chemical-mechanical polishing apparatus comprising the polishing pad, and a method of polishing comprising contacting a substrate with the polishing pad.

Abstract: A slowly advancing tape-shaped matrix is pressed into contact with a surface of a rapidly rotating non-magnetic substrate for a magnetic recording medium. An abrasive slurry is added to the matrix. The area contact rate between the matrix and the surface, as well as the contact pressure per unit area between the matrix and the surface are regulated to both polish and slightly roughen the surface in a single process. In the case of a glass presubstrate, the glass is chemically strengthened before being surface-treated.