Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: A grinding system includes a period determiner that determines, on the basis of a torque of a grinder of a dresser that grinds a welding tip, whether the current period is a grinding period in which the grinder is grinding the welding tip or a non-grinding period in which the grinder is not grinding the welding tip; and an anomaly detector that detects anomalies that are associated beforehand with each of the grinding period and the non-grinding period.

Abstract: A grinding system includes a welding gun movable relative to a workpiece. A pair of clamp devices move relatively toward each other to clamp a workpiece. A welding tip is disposed on one of the pair of clamp devices. A detector detects a relative movement amount of the welding tip with respect to the other clamp device. A dresser grinds the welding tip. While the dresser is grinding the welding tip, a determinator determines whether to make the dresser end grinding the welding tip based on the movement amount detected by the detector. When the determinator determines to make the dresser end grinding the welding tip, an instructor instructs the dresser to end grinding the welding tip.

Abstract: A wafer polishing apparatus configured to polish simultaneously both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding bole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, the wafer polishing apparatus can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

Abstract: A method and method for processing grit used for abrasive blasting may include receiving grit blasted onto a surface, where the grit includes moisture content. Air in which the grit being recycled is being processed may be heated. The moisture content may be evaporated from the grit using the heated air to produce dry recycled grit. The dried recycled grit may be stored.

Abstract: A sandpaper replacement device is used for replacing sandpaper of a polishing device, including a support platform, a driver, a driving detector sensor, a clamping member, a clamping detector and a controller. The driver includes a cylinder body and an extension rod movably positioned on the cylinder body. The cylinder body is positioned on the support platform, and the extension rod passing through and protruding out from the support platform. The driving detector sensor is positioned on the support platform adjacent to the extension rod. The clamping member includes a main body and two claws positioned oppositely to each other on the main body. The main body is mounted on the support platform away from the cylinder body. The clamping detector is positioned adjacent to the two claws. The controller is electrically connected to the driver, the driving detector sensor, the clamping detector and the clamping member.

Abstract: A measuring device for measuring a film thickness of a silicon wafer (1) comprises: position and velocity sensors (4) linearly arranged along a longitudinal direction into first and second position and velocity sensor arrays spaced apart from each other in a lateral direction, in which the position and velocity sensors (4) in the first position and velocity sensor array are in one-to-one correspondence with the position and velocity sensors (4) in the second position and velocity sensor array in the lateral direction; an eddy current sensor (2) disposed in a symmetrical plane between the first position and velocity sensor array and the second position and velocity sensor array and perpendicular to the lateral direction; and a controller connected to the position and velocity sensors (4) and the eddy current sensor (2) respectively for controlling measurement of the thickness of the film according to detection signals from the position and velocity sensors (4) and the eddy current sensor (2).

Abstract: A dressing method is used to dress a polishing pad of a polishing apparatus for polishing a substrate. This method includes repetitively moving the dresser on an upper surface of the polishing pad in a radial direction of the polishing pad so as to perform a dressing process on the polishing pad, during the dressing process, measuring a height of an upper surface of the polishing pad at a predetermined point in one of plural zones on the polishing surface, and repeating the repetitive moving of the dresser and the measuring of the height of the upper surface of the polishing pad so as to measure the height of the upper surface of the polishing pad in all of the plural zones.

Abstract: Provided is a gear grinding method wherein an initial cutting position by a grindstone is appropriately set, resulting in an improvement being able to be made in machining accuracy. For this purpose, the gear grinding method is such that rotation of a workpiece (W) about a workpiece rotation axis (C), cutting by a grindstone (15) in the X-axis direction, and feeding of the grindstone (15) in the Z-axis direction are controlled, resulting in the workpiece (W) being ground by the grindstone (15).

Abstract: There is provided a polishing apparatus capable of detecting uneven wear occurring on a polishing pad and detecting an appropriate replacement timing of the polishing pad. The polishing apparatus detects, every predetermined time, a value of rotation speed or a value of rotation torque of a table drive shaft for rotationally driving a polishing table or a dresser drive shaft for driving a dresser, or a value of swing torque of a dresser swing shaft for driving the dresser; calculates a change quantity thereof based on the value of the detected rotation speed, the value of the detected rotation torque, or the value of the detected swing torque; determines whether or not the change quantity exceeds a predetermined value; and notifies a user of a warning when a determination is made that the change quantity exceeds the predetermined value.

Abstract: The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Abstract: The present invention is directed to a double-side polishing method including interposing a wafer held by a carrier between upper and lower turn tables to which respective polishing pads are attached, and rotating and revolving the carrier while supplying a polishing agent to polish both surfaces of the wafer at the same time, the method including the steps of: first polishing at a high polishing rate; second polishing at a low polishing rate; measuring flatness of the polished wafer; and determining polishing conditions of the second polishing in a next polishing batch on a basis of the measured flatness. The method can stably improve the flatness of a wafer without being affected by variations in carrier thickness over time.

Abstract: A method for operating a machining tool, comprising: setting a flow rate and a pressure of a flow of coolant to a target flow rate and a pressure target, respectively, the coolant flow being provided to the machining tool; machining a work-piece using the machining tool; measuring the flow rate and the pressure of the flow of coolant; and detecting an anomaly with respect to the coolant flow; and taking a corrective action depending on the type of the detected anomaly.

Abstract: Disclosed herein is a device for cutting a glass sheet, continuously supplied after a melting and solidification process, into quadrangular glass substrates. The glass sheet cutting device includes two or more cutters for cutting a glass sheet into quadrangular glass substrates, a defect inspector for scanning the glass sheet to three-dimensionally check defect positions in a length direction, a width direction and a thickness direction of the glass sheet, a position adjuster for moving at least one of the cutters to a portion of the glass sheet at which few defects are distributed, and a controller for informing the position adjuster of positions of the cutters based on the scanned results received from the defect inspector.

Abstract: A method of polishing includes polishing a substrate, receiving an identification of a selected spectral feature to monitor during polishing, measuring a sequence of spectra of light reflected from the substrate while the substrate is being polished, determining a location value and an associated intensity value of the selected spectral feature for each of the spectra in the sequence of spectra to generate a sequence of coordinates, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of coordinates. At least some of the spectra of the sequence differ due to material being removed during the polishing, and the coordinates are pairs of location values and associated intensity values.

Abstract: A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.

Abstract: A core grinding wheel that has a grinding layer on an outer periphery of a core is used. An ultrasonic wave is output from an ultrasonic sensor to the grinding layer via grinding fluid. An ultrasonic measuring device control unit calculates a thickness of the grinding layer on the basis of a sonic velocity in the grinding layer and an arrival time difference between a reflected wave from a surface of the grinding layer and a reflected wave from a surface of the outer periphery of the core. A grinding process and a truing process are controlled on the basis of an outside diameter of the grinding wheel, which is calculated on the basis of the measured thickness of the grinding layer and an outside diameter of the core.

Abstract: A method accurately monitors the progress of polishing and accurately detects the polishing end point. The method includes directing light to the substrate during polishing of the substrate, receiving reflected light from the substrate, measuring an intensity of the reflected light at each wavelength, and producing a spectrum indicating a relationship between intensity and wavelength from measured values of the intensity. The method also includes calculating an amount of change in the spectrum per predetermined time, integrating the amount of change in the spectrum with respect to polishing time to obtain an amount of cumulative change in the spectrum, and monitoring the progress of polishing of the substrate based on the amount of cumulative change in the spectrum.

Abstract: A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.

Abstract: In a wafer processing method, an ingot is sliced into a wafer and the wafer is planarized by polishing a surface of the wafer. When the wafer is planarized, the wafer is disposed on a wafer holder and the wafer is rotated, a heat quantity is applied to a portion of the wafer so as to form a reformed layer at the portion of the wafer, and a polishing tool is brought into contact with the portion of wafer while rotating so as to polish the portion of the wafer.

Abstract: The method for machining a series of workpieces (21) via at least one machining jet includes the following steps: each workpiece (21) is associated with an identifier for uniquely identifying the workpiece, during the machining of a respective workpiece, the temporal characteristic of the machining jet is detected by at least one sensor (30), the detected temporal characteristic is evaluated so as to obtain at least one comparative value, and for detecting incorrect machining, the at least one comparative value is compared with at least one threshold value.

Abstract: A CNC system for effecting a finishing treatment of a surface, including: a mechanical assembly having a mechanical arm, adapted to move within at least two controllable axes of motion; a shoe arrangement, adapted to connect to an end of the arm and having at least one flexible surface finishing pad; and a drive mechanism adapted to drive the arm; a controller; a communication arrangement adapted to deliver communication signals between the controller and the mechanical assembly; and a positioning system providing the controller with positioning information with respect to the mechanical assembly, the system configured whereby the arm is responsive to the controller, the mechanical assembly adapted to urge the working surface against a workpiece surface, whereby a pressure is delivered thereto, the mechanical assembly including a controllable spring arrangement disposed and adapted to contribute to an overall mechanical compliance, normal to the working surface, of the mechanical assembly, the spring arrangem

Abstract: A method and an apparatus for smart automation of robotic surface finishing of a three-dimensional surface of a work piece is described. A three-dimensional motion path is created along the surface of the work piece. A variable contact force profile is specified along the three-dimensional motion path. The three-dimensional motion path is modified based on the specified variable contact force profile. The surface of the work piece is finished using one or more surface finishing tools along the modified three-dimensional motion path. The surface of the work piece includes at least a flat region and a curved region.

Abstract: A method of controlling polishing includes polishing a substrate of a non-metallic layer undergoing polishing and a metal layer underlying the non-metallic layer; storing a metal reference spectrum, the metal reference spectrum being a spectrum of light reflected from a same metal material as the metal layer; measuring a sequence of raw spectra of light reflected from the substrate during polishing with an in-situ optical monitoring system; normalizing each raw spectrum in the sequence of spectra to generate a sequence of normalized spectra, of which normalizing includes a division operation where the measured spectrum is in the numerator and the metal reference spectrum is in the denominator; and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least one normalized predetermined spectrum from the sequence of normalized spectra.

Abstract: Embodiments of the present invention generally provide a load cup used in the transfer of substrates in a chemical mechanical polishing system. The load cup includes an improved substrate edge sensing mechanism to ensure a substrate is present and correctly positioned in the load cup for transfer to a polishing head. In one embodiment, a lever actuated edge sensing mechanism is provided. In one embodiment, the edge of a substrate contacts a lever, which contacts a sensor to detect that the substrate is present and correctly positioned for exchange with a polishing head. Embodiments of the present invention provide reliable detection, while reducing contact with the feature side of the substrate during substrate transfer.

Abstract: The invention relates to a grinding center for the simultaneous grinding of multiple main bearings and rod bearings and/or central sections of crankshafts (22). Two rod bearing grinding spindles (14, 15), wherein the first can be displaced only in the Z direction and the second can be minimally displaced only in the X direction, are mounted on a common rod bearing crosslide (11). In the final phase of the grinding, a correction of dimension deviation between the two machined rod bearings is carried out via a separate control of the second rod bearing grinding spindle (15), as a dimension or roundness correction. The deviations are detected by measuring devices.

Abstract: A consumable component of a liquid jet cutting system is provided. The consumable component includes a body defining a conduit for a liquid jet and a signal device located on or within the body for transmitting a signal associated with the consumable component to a reader.

Abstract: A method and system for providing a perpendicular magnetic recording (PMR) head are disclosed. A PMR pole having a bottom and a top wider than the bottom is provided. The PMR pole may be formed by depositing a PMR pole layer, then removing part of the PMR pole layer, leaving the PMR pole. The PMR pole may also be provided by forming a trench having the desired profile in a photoresist layer, depositing the PMR pole layer, then removing the photoresist layer, leaving the PMR pole in the location of the trench. A side gap is deposited over the PMR pole. A side shield is provided on the side gap. A planarization that removes part of the side shield on the PMR pole is performed. A top gap is provided on the PMR pole, substantially covering the entire PMR pole. A top shield is provided on the top gap.

Abstract: The invention relates to a method and an arrangement for re-creation of an optimized contour of the leading edges of gas-turbine blades, in which a gas-turbine blade (2) is passed by one or more grinding machine or machines (71, 71?) with the aid of a computer-controlled robot (10). The desired contour is achieved by following a movement procedure which is stored in a data memory (21). The stored movement procedure is designed to convert a blade from a previously determined statistical mean wear state to a likewise previously determined or calculated design contour. The contact pressure of the gas-turbine blade on the grinding disk or disks (71, 71?) is measured and is taken into account in the movement procedure of the robot (10) such that the desired design contour is achieved irrespective of the initial contour and wear of the grinding disks.

Abstract: The described embodiment relates generally to the development of a finishing process for a device housing. The device housing can be formed of a thermoplastic, or a metal such as aluminum or stainless steel. A method and an apparatus are described for accurately measuring the amount of material removed during a finishing process. More particularly embodiments described within this application disclose a method of accurately measuring material removal during a finishing process across a curved or spline shaped surface by drilling an array of pockets along a surface of the device housing, where the drilled pockets can be used to measure material removal rates with a high degree of accuracy.

Abstract: Methods and systems for evaluating and/or increasing CMP pad dresser performance are provided. In one aspect, for example, a method of identifying overly-aggressive superabrasive particles in a CMP pad dresser can include positioning a CMP pad dresser having a plurality of superabrasive particles on an indicator substrate such that at least a portion of the plurality of superabrasive particles of the CMP pad dresser contact the indicator substrate, and moving the CMP pad dresser across the indicator substrate in a first direction such that the portion of the plurality of superabrasive particles create a first marking pattern on the substrate, wherein the first marking pattern identifies a plurality of working superabrasive particles from among the plurality of superabrasive particles.

Abstract: A first grinding head is provided on a base frame via a first movable body and a first grinding base. The proximal portion of the tilt arm is tiltably fitted in the housing of the grinding head. A measuring device is rotatably coupled to a distal portion of the tilt arm. A gauge and a measuring pin are coupled to the lower end of the measuring device, and the gauge is engaged with a crankpin of a crankshaft. A tilt center of the tilt arm is arranged on the same axis as the rotation center of the first grindstone ISA. When the tilt arm is tilted, the position of the measuring device is changed, accordingly. However, since the relational relationship between the first grindstone ISA and the gauge is not changed, the position of the gauge is easily adjusted in accordance with the diameter of the crankpin. Accordingly, a grinding machine is provided that simplifies the movement path of the gauge of the measuring device, thereby allowing the outer diameter of the workpiece to be quickly measured.

Abstract: A chemical-mechanical polishing (CMP) apparatus for manufacturing a semiconductor device. The apparatus includes: a spin chuck for supporting and rotating a semiconductor wafer; a polisher comprising a polishing pad for planarizing a surface of the semiconductor wafer, the polisher moving along the surface of the semiconductor wafer by a polishing arm; and a polisher supporting device for supporting the polisher and maintaining the polisher in a horizontal state, while polishing an edge part of the surface of the semiconductor wafer, in order to improve polishing uniformity of a center part and the edge part of the semiconductor wafer. Accordingly, polishing uniformity of the center part and edge part of the semiconductor wafer may be improved, and a height of the polisher supporting device may be optimized according to a polishing degree. Also, the polisher may be easily supported, wear and tear of the support head may be minimized, and the support head may function as a conditioner.

Abstract: In one aspect, a polishing pad includes a homogeneous unitary polishing layer having a polishing surface, an opposed bottom surface, a recess in the polishing surface extending partially but not entirely through the polishing layer, and a solid light-transmissive window is secured in the recess. In another aspect, a polishing pad includes a polishing layer having a polishing surface, and the polishing surface includes a first region having a first plurality of grooves with a first depth extending partially but not entirely through the polishing layer and a second region surrounded by the first region and having a second plurality of grooves with a second depth extending partially but not entirely through the polishing layer, the second depth greater than the first depth.

Abstract: A device for polishing centrifugal impellers for a turbomachine including a vat configured to be filled with a polishing agent, and an impeller support configured to make the impeller rotate around its axis and move it along its axis such that all of points of the impeller have a helical movement whereof the pitch is close to that of the helix from which the general shape of the airflow channels of the impeller comes, delimited by the blades of the impeller.

Abstract: A method and apparatus for measuring the polishability of a solid material such as a dental restorative material includes using a series of apparatus to perform the steps of forming the material into a desired specimen with a generally planar surface, conditioning the surface by abrasion, measuring the abraded surface with a profile determination device, optionally measuring the amount of material abraded from the surface and the gloss of the abraded surface, polishing a portion of the abraded surface with a polishing device at a controlled load for a pre-determined time and measuring the roughness and/or gloss of the polished surface followed by comparison thereof to the corresponding measurements of the unpolished, conditioned portion of the specimen surface. Polishing materials and devices may also be tested using the apparatus and method for polishing a standardized material.

Abstract: A system and a method of operating a chemical mechanical polishing (CMP) system comprises a slurry delivering unit configured for locally varying the supply of slurry while polishing the substrate. To this end, the slurry delivering unit may comprise at least one slurry outlet over a polishing pad of the CMP system, wherein the at least one slurry outlet is controllably movable to distribute slurry over the polishing pad.

Abstract: A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.

Abstract: A tool for moving an abrasive media can include a tool body and a drive system housed in the tool body. The drive system can include an output member. A retaining member can be disposed on the tool body. A first platen having a first attachment hub can be selectively coupled with the retaining member in an installed position. The first platen can have a first rotatable member that selectively attaches to the output member in a first mode of operation. A second platen having a second attachment hub can selectively couple with the retaining member in an installed position. The second platen can have a second rotatable member that selectively attaches to the output member in a second mode of operation.

Abstract: A system for magnetorheological finishing of a substrate. An integrated fluid management module (IFMM) provides dynamic control of the rheological fluid properties of the MR fluid on a conventional MR finishing apparatus, and dispensing of the fluid to the wheel. A magnetically shielded chamber charged with MR fluid is in contact with the carrier wheel. A transverse line removes the spent MR fluid from the wheel as the ribbon leaves the work zone. Replenishment fluid is added to the chamber via a dripper, and preferably an electric mixer agitates MR fluid in the chamber. A grooved magnetically-shielded insert at the exit of the chamber forms a polishing ribbon on the carrier wheel as the wheel is turned. A sensor sensitive to concentration of magnetic particles provides a signal for control of MR fluid properties, particularly, water content in the MR fluid. Means is provided for cooling fluid within the chamber.

Abstract: A process and an apparatus for generating control data for controlling a tool on a machine tool comprising at least 5 axes for the production of a predetermined finished part having a base body and at least one flank section protruding from the base body, finished part geometry data of the predetermined finished part geometry of the finished part being generated by means of fundamental geometry parameters and path data being generated by means of the finished part geometry data, the path data indicating the tool path along the surface of the flank section over which the tool has to travel with what tool orientation relative to the workpiece to remove material from the workpiece, the tool orientation of the tool corresponding to an orientation of a axis of rotation of the tool and the tool rotating about the axis of rotation of the tool to remove material from the workpiece.

Abstract: An eyeglass lens processing apparatus includes: a marking unit forming a mark on a lens; a mark position detector detecting a position of the mark; a controller performing roughing process and finishing process after the roughing process; and a positional deviation detector detecting a rotational deviation of the lens after the roughing process. The controller obtains a roughing path which allows, even if the lens rotates with respect to the lens chuck shafts by an angle at the time of the roughing process, the controller to perform the finishing process. The controller obtains an area in a process in which the mark and the target lens shape rotate on a chuck center of the lens chuck shafts by the angle, and computes the roughing path based on the area. The controller performs the roughing process based on the roughing path.

Abstract: The present invention provides a method of detecting and preventing grind burn from developing on a gear. The method includes performing acoustic emission testing while the gear is being ground during a grinding operation. The grinding wheel is evaluated during an eddy current test to detect material buildup on the grinding wheel which could cause grind burn. In addition, the method includes collecting swarf from the gear during the grinding operation and inspecting the swarf for an indication of grind burn.

Abstract: Methods and systems for imaging and cutting semiconductor wafers and other microelectronic device substrates are disclosed herein. In one embodiment, a system for singulating microelectronic devices from a substrate includes an X-ray imaging system having an X-ray source spaced apart from an X-ray detector. The X-ray source can emit a beam of X-rays through the substrate and onto the X-ray detector, and X-ray detector can generate an X-ray image of at least a portion of the substrate. A method in accordance with another embodiment includes detecting spacing information for irregularly spaced dies of a semiconductor workpiece. The method can further include automatically controlling a process for singulating the dies of the semiconductor workpiece, based at least in part on the spacing information. For example, individual dies can be singulated from a workpiece via non-straight line cuts and/or multiple cutter passes.

Abstract: A method according to embodiments of the present invention comprises providing a magnetic stack comprising a magnetic layer sub-stack comprising magnetic layers and a bottom conductive electrode and a top conductive electrode electrically connecting the magnetic layer sub-stack at opposite sides thereof; providing a sacrificial pillar on top of the magnetic stack, the sacrificial pillar having an undercut with respect to an overlying second sacrificial material and a sloped foot with increasing cross-sectional dimension towards the magnetic stack, using the sacrificial pillar for patterning the magnetic stack, depositing an insulating layer around the sacrificial pillar, selectively removing the sacrificial pillar, thus creating a contact hole towards the patterned magnetic stack, and filling the contact hole with electrically conductive material.

Abstract: An ultrasonic trimming apparatus is composed of an articulated robot, a cutting apparatus, and a grindstone. The cutting apparatus is composed of an ultrasonic oscillator supported by the end portion of the robot, a cutter blade which is supported by the ultrasonic oscillator, and a workpiece securing portion which secures a workpiece. The grindstone is disposed within the movable range of the cutter blade driven by the robot and is placed in a position at which the cutter blade can pressure contact the cutter blade. The cutter blade is ultrasonically vibrated by the ultrasonic oscillator and is ground while being pressed against the grindstone by means of the articulated robot. The ultrasonic trimming apparatus efficiently cuts a sheet material composed of soft material such as plastic, fabric, or rubber, a composite material, or a material containing glass fiber even when the material has a three-dimensional shape.

Abstract: For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.

Abstract: A method of polishing end point detection includes polishing a surface of a substrate; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; measuring reflection intensities of the reflected light at respective wavelengths; creating a spectral profile indicating a relationship between reflection intensity and wavelength from the reflection intensities measured; extracting at least one extremal point indicating extremum of the reflection intensities from the spectral profile; during polishing of the substrate, repeating the creating of the spectral profile and the extracting of the at least one extremal point to obtain plural spectral profiles and plural extremal points; and detecting the polishing end point based on an amount of relative change in the extremal point between the plural spectral profiles.

Abstract: Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side.