Abstract: The present invention provides a method capable of monitoring the polishing surface of the polishing pad without removing the polishing pad from the polishing table. The method includes: conditioning the polishing surface of the polishing pad by causing a rotating dresser to oscillate on the polishing surface; measuring a height of the polishing surface when the conditioning of the polishing surface is performed; calculating a position of a measuring point of the height on a two-dimensional surface defined on the polishing surface; and repeating the measuring of the height of the polishing surface and the calculating of the position of the measuring point to create height distribution in the polishing surface.

Abstract: An eyeglass lens processing apparatus includes a processing control unit (50) which in the soft processing mode, roughs the lens such that the torque threshold value is set to a value T?s lower than the threshold value T?N of a normal processing mode, and when torque detected by a sensor unit does not exceed the threshold value T?s, a axis-to-axis distance varying unit or a lens rotating unit is controlled so that a cutting amount per rotation of the lens reaches a threshold cutting amount, and when the detected torque exceeds the threshold value T?s, the axis-to-axis distance varying unit or the lens rotating unit is controlled so that the torque becomes lower than the threshold value T?s to decrease the threshold cutting amount.

Abstract: A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.

Abstract: A sawing device for sawing silicon blocks comprises at least one cutting element for sawing silicon blocks, the cutting element being drivable by means of a drive device, at least one guide device, with the at least one cutting element being alignable along a predetermined path by means of the at least one guide device, and at least one monitoring device for monitoring the position of the at least one cutting element.

Abstract: A polishing pad thickness measuring method measures the thickness of a polishing pad attached to an upper surface of a surface plate. The polishing pad thickness measuring method measures a first distance between an upper surface of the polishing pad and a reference position on a vertical line perpendicular to the surface of the polishing pad and a second distance between an upper surface of the surface plate and the reference position on the vertical line, and calculates the thickness of the polishing pad from the difference between the first and second distances.

Abstract: According to an aspect of an embodiment, a method for manufacturing a storage medium includes providing a medium plate member for forming the storage medium and a guide member; and aligning the medium plate member and the guide member so that the medium plate member and the guide member are placed adjacently and the surfaces of the medium plate member and the guide member form a substantially common plane. The method further includes guiding a burnishing member for burnishing the medium plate member onto the surface of the guide member; and sliding the burnishing member on the guide member onto the medium plate member so as to burnish the surface of the medium plate member.

Abstract: A grinding machine includes: a workhead (22) that rotatably supports a solid cylindrical or hollow cylindrical workpiece (W); a grinding wheel (43) that moves relative to the workhead (22) in a direction that intersects with a rotation axis of the workhead (22) to grind an outer peripheral surface of the workpiece (W); a measuring apparatus (50) that measures a position of an outer peripheral surface of the workpiece (W) corresponding to a rotation angle of the workhead (22); an outer peripheral surface shape calculation unit (64) that calculates an outer peripheral surface shape of the workpiece (W) on the basis of the position of the outer peripheral surface of the workpiece (W) measured by the measuring apparatus (50) during grinding; and a grinding condition determination unit (65) that determines a condition of grinding, which is performed after measurement by the measuring apparatus (50), on the basis of the calculated outer peripheral surface shape of the workpiece (W).

Abstract: Provided is a polishing method which can enhance thickness accuracy of a wafer at the time of polishing the wafer. In a polishing method of a crystal wafer (tuning fork substrate) which is held on a carrier between an upper platen and a lower platen, an AT cut wafer for thickness measurement is arranged on the carrier, the AT cut wafer is polished together with the crystal wafer (tuning fork substrate), resonance frequency of the AT cut wafer is detected, and a thickness of the crystal wafer (tuning fork substrate) is controlled based on a detection result.

Abstract: A method and apparatus for radially cutting tubulars in a downhole environment by emitting acoustic energy into the jet, the acoustic energy having a wavelength selected such that the jet acts as a waveguide, detecting reflected acoustic energy in the jet, and determining the depth of cut from a travel time of the acoustic energy.

Abstract: A method can effectively eliminate a surface level difference (irregularities) in a film formed on an object without producing scratches in a surface of the film, and can polish and remove the film into a flat surface with greatly increased productivity. The method comprises carrying out a first polishing step by pressing a polishing pad of a polishing device, having a diameter which is smaller than the radius of the object, against the surface of the object at a first pressure while moving the polishing pad and the object relative to each other at a first relative speed. The first polishing step is terminated at a point in time when a surface level difference in the object is eliminated to a targeted level.

Abstract: A shaft motion detection mechanism capable of detecting the displacement of a rotating body in a direction along a rotational axis and the rotation of the rotating body is disclosed. In one embodiment, the invention is a conditioner head capable of detecting the displacement of a polishing disk in a direction along a rotational axis and the rotation of the polishing disk. A shaft rotates around a rotational axis and a cylindrical shaft is attached to the shaft so that the shaft can be displaced along the rotational axis. A first plurality of projections are formed on the surface of the shaft so as to be aligned in a circumferential direction. A second projection is formed around the entire circumference on the surface of the shaft. Proximity sensors arranged around the rotational axis sense the first and second projections to detect displacement and rotation of the rotating body.

Abstract: The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a semiconductor wafer, to planarize the substrate.

Abstract: A polishing apparatus polishes a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position.

Abstract: The present invention is a wafer production method at least comprising a chamfering step of chamfering a wafer sliced from an ingot using a grindstone for chamfering, and a step of obtaining a product wafer thinner than the chamfered wafer by performing at least one or more than one of the following processes on the chamfered wafer: flattening, etching, and polishing, the method at least comprising a correction step of chamfering a dummy wafer equivalent in thickness to the product wafer, measuring the chamfered dummy wafer for its chamfered shape, and correcting the shape of the grindstone for chamfering based on the measured chamfered shape of the dummy wafer, at least before the chamfering step, thereby chamfering the wafer sliced from the ingot using the grindstone for chamfering having its shape corrected. Thus, it is possible to provide a wafer production method allowing a product wafer with a desired chamfered shape to be obtained in a short period of time.

Abstract: The present invention generally relates to an edge deletion module positioned within an automated solar cell fabrication line. The edge deletion module may include a grinding wheel device for removing material from edge regions of a solar cell device and cleaning the edge regions of the solar cell device after removing the material. The edge deletion module may also include an abrasive element, a portion of which is ground as it is periodically, laterally advanced toward the grinding wheel device. A controller is provided for controlling the operation and function of various facets of the module.

Abstract: In a manufacturing process of a head slider, a plurality of head elements are formed on a wafer, each head element comprising: a return pole, a coil, and a main pole. The wafer is cut into respective head elements so that individual head sliders are formed. A ratio of an amplitude of an electrical signal applied to the coil of the write head on the head slider to an amplitude of output from an independent magnetic field sensor not embedded in the head slider is calculated, where the independent magnetic field sensor is disposed near the main pole so as to be opposed to the main pole across the air bearing surface, and where the ratio is calculated while a displacement between the main pole and the magnetic field sensor is swept. A flare point height of the main pole is determined from the calculated amplitude ratio.

Abstract: A polishing apparatus to simultaneously polish both surfaces of a work, and includes a pair of stools rotating in opposite directions, a pair of detecting units to detect rotation rates of the stools, a pressurizing unit to compress the work between the pair of the stools, a slurry supply unit to supply a slurry to the stools, and a control unit to reduce, when determining that a frictional force between the polishing surface and the work exceeds a threshold, at least one of a load applied by the pressurizing unit, the rotation rate of the stools, and a supply amount of the slurry.

Abstract: A lens holder (16) is attached to a processing target lens (2) such that a holder center (O) coincides with a processing center position (21) of the lens. An axial deviation measuring mark (81a, 81b) is displayed on the processing target lens (2) to coincide with a reference position mark (80a, 80b) of the lens holder (16), and the circumferential surface of the processing target lens (2) undergoes primary processing. After primary processing, the axial deviation of the processing target lens (2) is measured from the reference position mark (80a, 80b) and axial deviation measuring mark (81a, 81b). When axial deviation exists, the lens holder (16) is removed from the processing target lens (2) and the processing target lens (2) is held again, so that the axial deviation is corrected. After that, the processing target lens (2) undergoes secondary processing.

Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.

Abstract: A polishing apparatus includes a loading section (14) for placing therein a cassette (12) in which a plurality of polishing objects are housed; a first polishing line (20) and a second polishing line (30) for polishing a polishing object; a cleaning line (40) having cleaning machines (42a, 42b, 42c, 42d) for cleaning the polishing object after polishing and a transport unit (44) for transporting the polishing object; a transport mechanism (50) for transporting the polishing object between the loading section (14), the polishing lines (20, 30) and the cleaning line (40); and a control section for controlling the polishing lines (20, 30), the cleaning line (40) and the transport mechanism (50).

Abstract: Disclosed herein is a chemical mechanical polishing apparatus. The apparatus comprises a carrier to hold a wafer and being capable of lifting, lowering and rotating, a polishing pad compressed onto the wafer through the lowering of the carrier to polish the wafer, a contact pressure sensor to detect contact pressure between the polishing pad and the wafer when the polishing pad is compressed onto the wafer, a support physical property controller to generate control signals corresponding to the contact pressure detected by the contact pressure sensor, a variable physical property support being adapted to come into close contact with the polishing pad and having physical properties varied in response to the control signals generated by the support physical property controller, and a rotational table to hold the variable physical property table.

Abstract: Correction of grinding spindle positions in double-side grinding machines for the simultaneous double-side machining of semiconductor wafers is achieved by torsionally coupling the two grinding spindles, each comprising a grinding disk flange for receiving a grinding disk, and providing a measuring unit with an inclinometer and two sensors for distance measurement, between the two grinding disk flanges such that the grinding spindles are essentially in the position they would have with mounted grinding disks during the grinding process, wherein the coupled grinding spindles are rotated while inclinometer and sensors determine radial and axial correction values of axial alignment to adjust the grinding spindles to a symmetrical orientation. The spindle positions may be corrected under the action of process forces.

Abstract: A polishing apparatus and exception handling method thereof is disclosed, the exception handling method of polishing apparatus includes: sending an alarm signal when an alarm is generated because of an exception during polishing; and processing a wafer in the polishing apparatus with organic acid solution according to the received alarm signal. The method and apparatus prevent the metal material from corrosion which causes device failure, when there is an alarm generated because of an exception which stops the apparatus during polishing.

Abstract: A CMP polishing pad with an optical sensor assembly embedded in the pad, connected to a transceiver and/or power supply mounted at the center of the pad or at the outer edge of the pad which communicates wirelessly with a control system.

Abstract: A method and system for detecting and controller wafer surface pressure distribution. Detecting and controlling wafer surface pressure distribution comprises measuring in situ wafer uniformity of a wafer at a plurality of locations of the wafer; and in response to the measured wafer uniformity controlling through a feedback loop in situ CMP head pressure applied at the plurality of locations of the wafer in real time to polish the wafer.

Abstract: The present invention is directed to systems and methods for assisting personnel in discerning which side of a dummy wafer has been polished more and for differentiating one side of a dummy wafer from the other. In a preferred embodiment, dummy wafers include a first plurality of depth indicia on a first surface and a second plurality of depth indicia on a second opposing surface. In one embodiment, each of the depth indicia of the first plurality of depth indicia extends a depth into the dummy wafer beyond the first surface, and each of the depth indicia of the second plurality of depth indicia extends a depth into the dummy wafer beyond the second surface. Other embodiments include depth indicia of the first plurality of depth indicia located at depths beyond the first surface that each have a corresponding depth indicia in the second plurality of depth indicia located at a substantially similar depth beyond the second surface.

Abstract: A tool for moving an abrasive media can include a tool body and a drive system housed in the tool body. The drive system can include an output member. A retaining member can be disposed on the tool body. A first platen having a first attachment hub can be selectively coupled with the retaining member in an installed position. The first platen can have a first rotatable member that selectively attaches to the output member in a first mode of operation. A second platen having a second attachment hub can selectively couple with the retaining member in an installed position. The second platen can have a second rotatable member that selectively attaches to the output member in a second mode of operation.

Abstract: To provide a manufacturing method which can adjust the lengths of a recording element and a reproducing element for enabling manufacture of high-quality magnetic head sliders. The manufacturing method comprises: a stacked-layer forming step which stacks magnetic heads on a substrate; a lapping step which cuts out a bar block having a plurality of connected magnetic head sliders, and polishes a flying surface; and a slider cutting step which cuts out individual magnetic head sliders from the bar block. The stacked-layer forming step forms a reproducing-element polish amount detecting sensor on a same layer as that of the reproducing element, and forms a recording-element polish amount detecting sensor on a same layer as that of the recording element. The lapping step carries out polishing based on each output value of the reproducing-element polish amount detecting sensor and the recording-element polish amount detecting sensor.

Abstract: A method in one embodiment includes forming an electric lapping guide layer; forming a write pole; forming a first gap layer over the write pole; masking a portion of the first gap layer for defining a window over the write pole and at least a portion of the electric lapping guide layer; and forming a bump over the write pole in the window. Additional methods and systems are presented.

Abstract: A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.

Abstract: Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side.

Abstract: A machine tool is fitted with a position detector for detecting a position of a moving axis of the machine tool and an on-machine measuring device for measurement on the machine tool. An axial position detection signal output from the position detector and a measurement signal output from the on-machine measuring device are received through interfaces by a numerical controller that controls the machine tool. These interfaces are designed so that the numerical controller receives the axial position detection signal and the measurement signal with the same timing.

Abstract: A method and apparatus for quickly moving workpieces from having abrading contact with abrasive-surfaced rotatable platens using a dynamic-action workholder apparatus frame moving device that is activated by a sensor. Flat-surfaced workpieces are attached to flat-surfaced workholders to abrade one surface of the workpieces by abrasive coated platens. The force moving device can be a spring, an air cylinder, a screw-jack, an electric solenoid or a piezo-electric device. The sensor can be a vibration, shock, motion, force or sound sensor that can to sense abrading process events that could make it desirable to quickly activate moving of the workpieces away from the abrasive disk. The workpiece abrading event can be quickly interrupted by use of this device to avoid damage to workpieces, the abrasive disks or the platen or to quickly change an abrading process. After the workpieces are moved they can be returned to their original abrading position.

Abstract: A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a top ring configured to hold and press the substrate against the polishing surface, a top ring shaft configured to lift and lower the top ring, and an elongation detecting device configured to detect an elongation of the top ring shaft. The polishing apparatus further includes a controller configured to set a vertical position of the top ring at the time of polishing, and control a lifting and lowering mechanism to lower the top ring to a preset polishing position as the set vertical position. The controller corrects the preset polishing position based on the elongation of the top ring shaft which has been detected by the elongation detecting device.

Abstract: A wafer grinding method and a wafer grinding machine are disclosed for grinding a wafer by executing both the rough grinding process and the finish grinding process. After the rough grinding process before the finish grinding process, the wafer thickness is measured with a noncontact-type thickness gauge, and during the finish grinding process, the finish thickness is finely adjusted by use of a contact-type thickness gauge and referring to the measurement data of the noncontact-type thickness gauge.

Abstract: Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.

Abstract: A polishing apparatus detects the escape of a substrate from a top ring during polishing. The polishing apparatus includes a polishing table having a polishing pad, a top ring, and a substrate escape detection section for detecting escape of the substrate from the top ring. The detection section includes a light irradiation member for irradiating an area of the upper surface of the polishing pad with light, a controller for controlling the light irradiation of the light irradiation member, an image-taking member for taking an image of the area irradiated with the light, and an information processing member for processing information outputted from the image-taking member. The controller controls the light irradiation member in such a manner that it performs light irradiation at least for a period of time during which the substrate is regarded as being in contact with the polishing pad.

Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.

Abstract: A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof.

Abstract: A lapping or polishing machine includes a material having a first finishing surface to process a surface of a work item, a measuring tool to measure a contour of the first finishing surface, and a conditioning tool having a second finishing surface to process the first finishing surface to reduce a difference between the measured contour and a desired contour of the first finishing surface.

Abstract: An abrasive supply system may, for example, be used to supply abrasive particles such as garnet to a cutting nozzle of an abrasive jet cutter. According to an embodiment, the abrasive is propelled by a substantially constant flow rate gas source. According to an embodiment, the system may be supplied with abrasive from an atmospheric pressure abrasive hopper. According to an embodiment, a controller automatically actuates refilling of an abrasive tank from the abrasive hopper, and then automatically closes an abrasive supply valve and restarts abrasive propulsion. According to an embodiment, the controller may include or consist of pneumatic logic.

Abstract: A method for cleaning a glass substrate which ensures removal of abrasive and other foreign matter without making a cleaning step complicated involves cleaning the glass substrate by scrubbing using two or more types of cleaning liquid having different Si element elution abilities. The cleaning liquid having the highest Si element elution is used first, and the cleaning liquid having the lowest Si element elution is used last.

Abstract: Methods and apparatuses for calibrating eddy current sensors. A calibration curve is formed relating thickness of a conductive layer in a magnetic field to a value measured by the eddy current sensors or a value derived from such measurement, such as argument of impedance. The calibration curve may be an analytic function having infinite number terms, such as trigonometric, hyperbolic, and logarithmic, or a continuous plurality of functions, such as lines. High accuracy allows the omission of optical sensors, and use of eddy current sensors for endpoint detection, transition call detection, and closed loop control in which a process parameter is changed based on the measured magnetic flux density change in one or more processing zones.

Abstract: A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, a method for monitoring at least one surface of a retaining ring coupled to a carrier head is provided. The method includes moving the carrier head adjacent a sensor device disposed in a polishing module, transmitting energy from the sensor device toward the retaining ring, receiving energy reflected from the retaining ring, and determining a condition of the retaining ring based on the received energy.

Abstract: A cutting apparatus for cutting corner pieces formed of stone or other materials for use as building faces or for cutting flat pieces is disclosed herein. The cutting apparatus includes a frame with a first and a second conveyor operatively attached to the frame. The first and the second conveyors are configured to carry a workpiece from a first end of the frame to the second end of the frame. The first conveyor is disposed at an angle of about 45 degrees to a ground surface supporting the cutting apparatus. The second conveyor is disposed at an angle of about 45 degrees to the ground surface supporting the cutting apparatus, wherein the second conveyor is positioned perpendicularly to the first conveyor so as to form a V-shaped channel therewith.

Abstract: A method for fabricating a glass substrate containing SiO2 as a main ingredient thereof and having a uniform and minute pattern of stripes formed on the surface thereof by ultraprecision polishing includes a step of inspecting whether or not, at the topmost surface portion of the glass substrate after polishing, a given property of a bound energy of the Si atom with respect to the electrons occupying a 2P orbit as determined by XPS is equal to or less than a predetermined value, and the given property is a shift amount of the bound energy or a half-value width of the bound energy distribution, the predetermined value is 0.10 eV or 2.15 eV, respectively.

Abstract: A method of controlling polishing includes polishing a substrate having a second layer overlying a first layer, detecting exposure of the first layer with an in-situ monitoring system, receiving an identification of a selected spectral feature and a characteristic of the selected spectral feature to monitor during polishing, measuring a sequence of spectra of light from the substrate while the substrate is being polished, determining a first value for the characteristic of the feature at the time that the first in-situ monitoring technique detects exposure of the first layer, adding an offset to the first value to generate a second value, and monitoring the characteristic of the feature and halting polishing when the characteristic of the feature is determined to reach the second value.

Abstract: A method monitors a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.

Abstract: A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.

Abstract: An apparatus and method for lapping and fabricating a read/write head is described. The lapping method includes performing a first lapping process on a structure having the read/write head fabricated therein. The first lapping process is for reducing a first resistive region. The first resistive region is located proximal to a surface of the structure. The first lapping process is for achieving a first lapping benchmark. The lapping method further includes performing a second lapping process on a second resistive region. The second lapping process laps at a rate lesser than the first lapping process. The second lapping process is for achieving a second lapping benchmark. The second resistive region is interposed between the first resistive region and the read/write head. The second resistive region has a different resistive value than the second resistive region.