Abstract: A method, system, and computer-usable medium for implementing a programmable DMA master with data checking utilizing a drone system controller. According to an embodiment of the present invention, a drone processor generates a collection of random data and stores a first and second copy of the collection of random data in a first and second memory location in a drone memory. The drone processor writes a third copy of the collection of random data in a processor memory. When the drone processor retrieves the third copy from the processor memory, the drone processor writes the third copy in the second memory location in the drone memory. When the drone processor compares the first copy with the third copy, the results of the compare is written in a status location within the drone processor.

Abstract: A semiconductor package includes a memory controller chip, a plurality of first memory chips configured to store normal data, a second memory chip configured to store error information for correcting or detecting error of the normal data, and an interface unit configured to interface the memory controller chip, the plurality of first memory chips, and the second memory chip.

Abstract: According to one embodiment, a certain amount of data is held in the memory cells, and after a state of the data held in the memory cell is transferred into an indefinite state, data autonomously held in the memory cell is read, and a change of the threshold voltage of transistors is diagnosed on the basis of the distribution of the data autonomously held in the memory cell.

Abstract: When write request signal is input from a host device 10, an SSD 20 inputs data input from the host device 10 in an encoder 30 sequentially and controls a RRAM 24 to store data output from the encoder 30. When size of data stored in the RRAM 24 reaches predetermined size Sref, the SSD 20 controls the RRAM 24 to read out data of size of the predetermined size Sref, inputs read data from the RRAM 24 in the encoder 32, and controls a flash memory 22 to store data output from the encoder 32. This configuration accomplishes the increase of the data write speed and improvement of reliability of the data.

Abstract: The invention provides a method for writing test data to a memory. In one embodiment, the memory comprises a data register. First, test data is written to a memory space of the memory. A read-back command and a read-back address of the memory space are then sent to the memory to direct the memory to read the test data from the memory space to the data register. A copy-back command and a copy-back command in a test range of the memory are then sent to the memory to direct the memory to write the test data stored in the data register to the copy-back address. Finally, when the test range of the memory has not been filled with the test data, the step of sending the read-back command and the read-back address is repeated, and the step of sending the copy-back command and the copy-back address is repeated.

Abstract: A memory system according to the embodiment comprises a cell array including cell units having p or more physical quantity levels (p is a prime of 3 or more); a code generator unit operative to convert binary-represented input data to a write code represented by elements in Zp that is a residue field modulo p; and a code write unit operative to write the write code in the cell unit in accordance with the association of the elements in Zp to different physical quantity levels, wherein the input data is recorded in (p?1) cell units, the (p?1) cell units including no cell unit that applies the same physical quantity level for write in the case where the input data is 0 and for write in the case where only 1 bit is 1.

Abstract: A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performing multiple read operations that compare analog output values of the analog memory cells to different, respective read thresholds so as to produce multiple comparison results for each of the analog memory cells. At least two of the read thresholds are positioned between a pair of the nominal values that are adjacent to one another in the set of the nominal values. Soft metrics are computed responsively to the multiple comparison results. The ECC is decoded using the soft metrics, so as to extract the data stored in the analog memory cells.

Abstract: A test apparatus for testing a device under test includes a capture memory that stores thereon an output pattern received from the device under test, a header detecting section that reads the output pattern from the capture memory and detects a portion matching a predetermined header pattern in the output pattern, and a judging section that judges whether the output pattern is acceptable based on a result of comparison between a pattern, in the output pattern, which starts with the portion matching the predetermined header pattern and a corresponding expected value pattern.

Abstract: A test system includes a computer and an interface device for accessing a scan chain on an application specific integrated circuit (ASIC) under test. The computer includes a memory that contains application software that when executed by the computer quantifies soft errors and soft error rates (SER) in storage elements on the ASIC. The interface device receives commands and data from the computer, translates the commands and data from a first protocol to a second protocol and communicates the commands and data in the second protocol to the ASIC. A method for measuring SER in the ASIC includes baseline, comparison, and latch up accesses of data in a scan chain in the ASIC. Between accesses, the ASIC is exposed to a neutron flux that accelerates the occurrence of soft errors due to ionizing radiation upon the ASIC.

Abstract: An integrated circuit and method for testing memory on the integrated circuit are provided. The integrated circuit has processing logic for performing data processing operations on data, and a plurality of memory units for storing data for access by the processing logic. Further, memory test logic is provided to perform a sequence of tests in order to seek to detect memory defects in the memory units. The memory test logic comprises a plurality of test wrapper units, each test wrapper unit associated with one of the memory units and being operable to execute tests on the associated memory unit, and a test controller for controlling performance of the sequence of tests by communicating with each of the test wrapper units to provide test data defining each test to be executed by that test wrapper unit.

Abstract: A system and method for verifying the receive path of an input/output device such as a network interface circuit. The device's operation with various different input sources (e.g., networks) and output sources (e.g., hosts, host buses) is modeled in a verification layer that employs multiple queues to simulate receipt of packets, calculation of destination addresses and storage of the packet data by the device. Call backs are employed to signal completion of events related to storage of packet data by the device and modeling of data processing within the verification layer. Processing of tokens within the verification layer to mimic the device's processing of corresponding packets is performed according to a dynamic DMA policy modeled on the device's policy. The policy is dynamic and can be updated or replaced during verification without interrupting the verification process.

Abstract: A scan test of a first latch and a second latch couples a given scan value to the input of the first latch, to switch the first latch to a state corresponding to the scan value, uncouples the scan value from the first latch to latch the first latch at that state, couples the output of the first latch while latched at that state to the input of the second latch to switch the second latch to that state, and uncoupling the output of the first latch from the input of the second latch to latch the second latch at that state.

Abstract: An elevator electronic safety system in which reliability of malfunction check can be improved by performing a malfunction check on memory data, an address bus, and a data bus. A check on the address bus and the data bus is executed periodically by a hardware circuit and software processing, and a memory data malfunction check circuit. A designated address and designated data used to verify both cases of “0” and “1” for each of all bit signals on the address bus and the data bus in a memory system are input to or output (the address is only output) from a CPU periodically. For the address bus, plural designated addresses are detected by a designated address detection circuit. For the data bus, plural pieces of designated data are written into and read out from memories and the data before and after writing are compared with each other.

Abstract: A method of testing a semiconductor memory device includes reading previously written test data from the semiconductor memory device simultaneously through at least two data I/O connections, e.g., pins or pads, of the semiconductor memory device. The signals from the two data I/O connections are combined to produce a compound output signal. The compound output signal is received by a single I/O channel of a tester.

Abstract: One Time Programmable (OTP) memory structures and methods for pretesting the support circuitry are provided. A group of dedicated test cells associated with one or more groups of regular OTP cells are used to test the support circuitry for the regular OTP cells. The dedicated cells are programmed and read. The read values are compared to the programmed values or expected values. As a result of the comparison, failing memories may be designated “Not Usable”, while regular OTP cells of passing memories can be programmed for their purpose resulting in elimination of wasted memories during test.

Abstract: A self-test module for use in an electronic device includes a test controller and a memory. The memory is configured to receive test vectors from the test controller. A comparator is configured to receive the test data from the memory via an output data path. A strobing buffer is located in the output data path between an output from the memory and an input to the comparator. The strobing buffer is configured to selectively enable the test vectors to propagate from the memory output to the comparator input.

Abstract: Provided is a memory system for seamless switching. The memory system includes first through mth chips, where m is a natural number, connected in the form of a daisy chain and configured to transmit at least one of signals and data, a (k?1)th chip of the first through mth chips, where k is a natural number and 2?k?m, configured to output a (k?1)th detection signal corresponding to a phase difference between (k?1)th test data of the (k?1)th chip and kth test data of a kth chip of the first through mth chips, and the kth chip including a clock phase control unit configured to control a phase of a received clock signal and to output the phase-controlled clock signal as a kth clock signal, where the clock phase control unit of the kth chip outputs the kth clock signal in response to the (k?1)th detection signal.

Abstract: A structural primitive verification tool for memory compilers is described. A first set of memory structural primitives are supplied by a designer by filling in fields of a presented user interface. The first set of structural primitives describe certain physical layout features of a proposed memory array in an integrated circuit. A first model of a memory instance derived from the first set of memory structural primitives supplied by the designer is compared to a second model of a memory instance derived from a memory layout file from a memory compiler under-test. The first model is verified against the second model to verify to an integrity of the first set of memory structural primitives supplied by the designer compared to the memory layout file derived from a second set of memory structural primitives configuring that memory instance from the memory compiler.

Abstract: Exemplary method, system, and computer program embodiments for performing deterministic data verification by a storage controller are provided. Each of a plurality of concurrent write tasks is configured to be placed in a plurality of overlapping data storage ranges by performing at least one of: implementing a data generation function for generating pseudo-random data using a data seed, and generating a range map, the range map utilized as a lookup data structure to verify a chronological order for performing the plurality of concurrent write tasks, wherein a data address space is first designated in the range map as undetermined. Each of a plurality of read tasks is analyzed by comparing data read from a sub range in the plurality of overlapping data storage ranges against the data seed associated with the sub range.

Abstract: The disclosed invention provides a structure and method for detecting address line (e.g., wordline, bitline) memory failures. In one embodiment, the method and structure comprise generating an address signature, by re-encoding an internally generated address signal from activated elements (e.g., wordlines) inside a memory array. The regenerated address signature may be compared with a requested memory address location. If the regenerated address signature and memory location are equal than there is no error in the memory array, but if the regenerated address signature and memory location are equal than an error is present in the memory array. Accordingly, re-encoding an address signature provides a closed loop check that a wordline and/or bitline, that was actually activated in a memory array, was the correct requested wordline and/or bitline, that no other wordlines or bitlines were also triggered, and that the wordline and/or bitline is continuous.

Abstract: A semiconductor memory device having a mount test circuit and a mount test method thereof are provided. The test circuit for use in a semiconductor memory device including a plurality of memory blocks may include a comparison unit for comparing test data of at least two memory blocks selected from the plurality of memory blocks, deciding whether or not the test data of the selected memory blocks are identical, and outputting a pass signal or fail signal as a flag signal; and an output selection unit for selecting any one of the selected memory blocks as an output memory block, and changing the output memory block whenever the fail signal is generated from the comparison unit, thus forming it as a data output path, which may lessen error occurrence.

Abstract: Methods and apparatus utilizing media characterization of memory devices facilitate the development of signal processors for analyzing memory device outputs. Models are developed from capturing output of memory devices of the type utilizing analog signals to communicate data values of two or more bits of information. The models are used to generate signals representative of the expected output of a memory device having an input data pattern. Read channels and/or controllers then process those signals to determine an output data pattern. By comparing the output data pattern to the input data pattern, the accuracy of the signal processing can be gauged.

Abstract: In one embodiment, an apparatus comprises an interconnect; at least one processor coupled to the interconnect; and at least one memory controller coupled to the interconnect. The memory controller is programmable by the processor into a loopback test mode of operation and, in the loopback test mode, the memory controller is configured to receive a first write operation from the processor over the interconnect. The memory controller is configured to route write data from the first write operation through a plurality of drivers and receivers connected to a plurality of data pins that are capable of connection to one or more memory modules. The memory controller is further configured to return the write data as read data on the interconnect for a first read operation received from the processor on the interconnect.

Abstract: A test pattern generating unit generates a test pattern in which unconverted data is arranged such that same values of 0 or 1 bits in converted data according to a code conversion table are successively transferred to each of a plurality of serial transfer channels that a high-speed serial transfer device has. A basic pattern setting unit sets a basic pattern while considering a byte order method and an RD value of code conversion in the high-speed serial transfer device. A basic pattern resetting unit resets the basic pattern in accordance with a channel usage method of a bit transfer order in the high-speed serial transfer device. A basic pattern rearranging unit performs rearrangement such that the basic pattern is transferred to each of the channels in accordance with the number of used channels and a channel usage method such as bit transfer order in the high-speed serial transfer device.

Abstract: A memory error detecting apparatus for detecting an error of a subject memory, the memory error detecting apparatus includes a memory bus connected to the subject memory, a mirror memory connected to the memory bus so as to receive the same data as data to be written into and read from the subject memory, the received data being written into the mirror memory, an address acquiring portion configured to acquire an address related to the data written into the subject memory, a mirror memory controller configured to control data writing or reading to or from the mirror memory on the basis of the acquired address, a comparator configured to compare data read from the subject memory and data read from the mirror memory, and an error detector configured to detect a data error on the basis of a result of the comparison.

Abstract: A method for executing a program verify operation in a non-volatile memory. A data register having master and slave latching circuits is used for concurrently storing two different words of data. In a program operation, the master latch stores program data which is used for programming selected memory cells. In a program verify operation, the data programmed to the memory cells are read out and stored in the slave latches. In each data register stage, the logic states of both latches are compared to each other, and a status signal corresponding to a program pass condition is generated if opposite logic states are stored in both latches. The master latch in each stage is inverted if programming was successful, in order to prevent re-programming of that bit of data.

Abstract: One or more embodiments of the invention enable a memory device to load its memory array with desired background data, such as to reduce total test time and costs associated with testing. A background data loading circuit according to one embodiment of the invention includes a buffer, a data loading circuit, and a pattern generating logic. The buffer is coupled to the array of memory cells. The data loading circuit is coupled to load data into the buffer to be transferred to a respective row of the memory cells. The pattern generating logic is coupled to the data loading circuit. The pattern generating logic applies a pattern generating algorithm corresponding to a test mode when the memory devices is in the test mode and generates patterns of data each for a respective row of the memory cells according to the pattern generating algorithm.

Abstract: An object of the present invention is to provide a semiconductor device capable of recognizing circuit malfunction in an actual operation and of specifying a point of the circuit malfunction, and the semiconductor device, which does not induce the malfunction in the circuit of a subsequent stage when restoring the malfunction. The present invention is the semiconductor device provided with a plurality of logic circuits and a plurality of judging circuits for judging malfunction based on data from the logic circuits, wherein each of the judging circuits is provided with a first register, delay unit, a second register, a comparator and scanning unit, which makes the second register a shift register to allow to transmit an error signal held in the second register to the subsequent stage, while allowing the comparator to hold a comparison result.

Abstract: Embodiments of the present disclosure provide methods, devices, and systems for performing a programming operation on an array of non-volatile memory cells. One method includes programming a number of cells to a number of final data states. The method includes performing, prior to completion of, e.g., finishing, the programming operation, an erase state check on a subset of the number of cells, which were to be programmed to an erased state.

Abstract: An integrated circuit configured for at-speed scan testing of memory arrays. The integrated circuit includes a scan chain having a plurality of serially coupled scan elements, wherein a subset of the plurality of scan elements are coupled to provide signals to a memory array. Each scan element of the subset of the plurality of scan elements includes a flip flop having a data input, and a data output coupled to a corresponding input of the memory array, and selection circuitry configured to, in an operational mode, couple a data path to the data input, and further configured to, in a scan mode, couple to the data input one of a scan input, the data output, and a complement of the data output. The scan elements of the subset support at-speed testing of a memory array coupled thereto.

Abstract: A test module comprising a compression information storage section that stores a plurality of pieces of compression information that each associate a pattern sequence with a piece of pattern sequence identification information; a basic pattern storage section that stores, as a group of basic patterns, a plurality of pieces of pattern sequence data that each include the pattern sequence or the pattern sequence identification information in association with a command; an instruction information storage section that stores instruction information indicating a processing order for the basic patterns; a selecting section that selects, from among the pieces of compression information stored in the compression information storage section, compression information to be used for the basic pattern to be processed according to the processing order indicated by the instruction information; a basic pattern reading section that reads, from the basic pattern storage section, the pattern sequence data included in the basic p

Abstract: An integrated circuit device contains a flash memory, a flash control unit for controlling the rewriting and reading on the flash memory, and a processor unit. The processor unit includes a normal mode and a fail-safe mode as the operating states. In normal mode, when a defect is detected during the verify operation after writing data onto the flash memory then any further use of the flash memory is stopped. In fail-safe-mode, when a defect is detected during the verify operation after writing data onto the flash memory, the error is corrected and flash memory usage continues. The operating state is normal mode, and when the verify operation detects a defect after normal mode erase operation, the operation shifts to fail-safe mode.

Abstract: A multi-strobe circuit that latches a signal to be tested, an evaluation target, at each edge timing of a multi-strobe signal having a plurality of edges. An oscillator oscillates at a predetermined frequency in synchronization with a reference strobe signal. A latch circuit latches the signal to be tested at an edge timing of an output signal of the oscillator. A gate circuit is provided between a clock terminal of the latch circuit and the oscillator, and makes the output signal of the oscillator pass therethrough for a predetermined period. A clock transfer circuit loads the output signal of the latch circuit at an edge timing of the output signal of the oscillator and performs retiming on the output signal of the latch circuit by using a reference clock.

Abstract: A plurality of stacked memory device die and a logic circuit are connected to each other through a plurality of conductors. The stacked memory device die are arranged in a plurality of vaults. The logic circuit die serves as a memory interface device to a memory access device, such as a processor. The logic circuit die includes a plurality of link interfaces and downstream targets for transmitting received data to the vaults. The logic circuit die includes a packet builder and broadcaster configured to receive command, address and data signals over separate interfaces from a conventional tester, format the signals into a packet and broadcast the signals to a plurality of vaults.

Abstract: A method for detecting component defects of an analog signal processing circuit, especially for a measurement transmitter. A test signal TS is generated at a first test point TP1 and an associated response signal RS tapped at a second test point TP2 and evaluated in a digital unit. In the evaluation, individual amplitude values of the response signal RS are compared with predetermined, desired values. In the case of significant deviations, a defect report is generated.

Abstract: A semiconductor memory device including: a memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells arranged in portions where the plurality of word lines and the plurality of bit lines intersect with each other; a plurality of data bus lines connected to the plurality of bit lines; a plurality of sense amplifiers individually connected to the plurality of data bus lines and configured for detecting memory data stored in corresponding memory cells based on values of currents that are generated in the individual data bus lines in accordance with the memory data.

Abstract: Example embodiments relate to a method and system of testing a memory module having the process of receiving single ended input signals via differential input terminals through which differential pairs of packet signals may be received from a testing equipment, wherein a number of terminals of the testing equipment may be different from a number of terminals of the memory module, and testing memory chips of the memory module based on the single ended input signals.

Abstract: A method for testing a dynamic random access memory (DRAM) includes copying a test program from the DRAM to a random access memory (RAM). Start and end physical addresses of the DRAM are respectively stored in first and second registers. First test data is written to the start physical address, and second test data is read from the start physical address. The method further includes determining whether the second test data is the same as the first test data. A fixed value is added to the start physical address to obtain a next start physical address if the second test data is the same as the first test data. The method further includes determining whether the next start physical address is less than the end physical address. A test success result is returned if the next start physical address is not less than the end physical address.

Abstract: Searching for patterns stored on a hardware storage device. A method includes, as part of a memory refresh operation, performing a read to read contents of a portion of a memory. The method further includes writing the read contents of the portion of memory back to the portion of memory. The read contents are provided to data comparison logic. Using the data comparison logic; the read contents are compared to predetermined data patterns. A determination is made as to whether or not the contents match at least one of the predetermined data patterns. When the read contents match at least one of the predetermined data patterns, a software readable indicator is provided indicating that the read contents match at least one of the predetermined data patterns. Similar embodiments may be implemented using hard drive head wear leveling operations.

Abstract: Disclosed are methods, systems and devices, such as a device including a data location, a quantizing circuit coupled to the data location, and a test module coupled to the quantizing circuit. The quantizing circuit may include an analog-to-digital converter, a switch coupled to the memory element and a feedback signal path coupled to the output of the analog-to-digital converter and to the switch.

Abstract: One embodiment provides a runtime programmable system which comprises methods and apparatuses for testing a multi-port memory device to detect a multi-port memory fault, in addition to typical single-port memory faults that can be activated when accessing a single port of a memory device. More specifically, the system comprises a number of mechanisms which can be configured to activate and detect any realistic fault which affects the memory device when two simultaneous memory access operations are performed. During operation, the system can receive an instruction sequence, which implements a new test procedure for testing the memory device, while the memory device is being tested. Furthermore, the system can implement a built-in self-test (BIST) solution for testing any multi-port memory device, and can generate tests targeted to a specific memory design based in part on information from the instruction sequence.

Abstract: A semiconductor device includes a memory module provided with a plurality of memory cells, a verify determination unit that performs quality determination of read data that have been read from the memory cells on the basis of the read data and an expected value prepared in advance, and a power source monitoring circuit that detects fluctuations equal to or greater than a predetermined variation rate in a power source voltage supplied to the memory module and outputs a power source abnormality detection signal. Furthermore, the verify determination unit invalidates a result of the quality determination when the power source abnormality detection signal indicates an abnormal state of the power source voltage.

Abstract: Data stored in non-volatile storage is decoded using iterative probabilistic decoding. An error correcting code such as a low density parity check code may be used. In one approach, initial reliability metrics, such as logarithmic likelihood ratios, are used in decoding sensed states of a set of non-volatile storage element. The decoding attempts to converge by adjusting the reliability metrics for bits in code words which represent the sensed state. Soft data bits are read from the memory if the decoding fails to converge. Initial reliability metric values are provided after receiving the hard read results and at each phase of the soft bit operation(s). In one embodiment, a second soft bit is read from the memory using multiple subsets of soft bit compare levels. While reading at the second subset of compare levels, decoding can be performed based on the first subset data.

Abstract: A method, device, and system are disclosed. In one embodiment method includes determining a left edge and right edge of a valid data eye for a memory. The method continues by periodically checking the left and right edges for movement during operation of the memory. If movement is detected, the method retrains the valid data eye with an updated left edge and right edge.

Abstract: A semiconductor integrated circuit has a memory collar including a memory cell configured to store a written data pattern and read and output the data pattern, and a register configured to store a failed data pattern, and a built-in self test circuit configured to write the data pattern in the memory cell, output expected value data, and decide whether to continue a test or suspend the test to output failure information to outside, based on a comparison result of the data pattern outputted from the memory cell and the expected value data and a comparison result of the data pattern and the failed data pattern.

Abstract: A system for calibrating timing for write operations between a memory controller and a memory device is described. During operation, the system identifies a time gap required to transition from writing data from the memory controller to the memory device to reading data from the memory device to the memory controller. The system then transmits a test data pattern to the memory device within the time gap. The system subsequently uses the received test data pattern to calibrate a phase relationship between a received timing signal and data transmitted from the memory controller to the memory device during write operations.

Abstract: An object of the present invention is to provide a semiconductor device capable of recognizing circuit malfunction in an actual operation and of specifying a point of the circuit malfunction, and the semiconductor device, which does not induce the malfunction in the circuit of a subsequent stage when restoring the malfunction. The present invention is the semiconductor device provided with a plurality of logic circuits and a plurality of judging circuits for judging malfunction based on data from the logic circuits, wherein each of the judging circuits is provided with a first register, delay unit, a second register, a comparator and scanning unit, which makes the second register a shift register to allow to transmit an error signal held in the second register to the subsequent stage, while allowing the comparator to hold a comparison result.

Abstract: A semiconductor memory device including a plurality of banks, each including a plurality of memory cells, a pattern signal generator configured to generate pattern signals having combinations in response to an input signal applied through an arbitrary pad in a compression test mode. Input paths are configured to transfer the plurality of pattern signals to the corresponding banks.

Abstract: An I/O compression apparatus, for testing a memory array and/or a logic circuit, is comprised of a selectable compression circuit that outputs compressed test data from the memory array/logic circuit. An I/O scan register is coupled to each I/O pad for converting serial data to parallel and parallel data to serial in response to a test mode select signal, a test data input, and a test clock.

Abstract: A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performing multiple read operations that compare analog output values of the analog memory cells to different, respective read thresholds so as to produce multiple comparison results for each of the analog memory cells. At least two of the read thresholds are positioned between a pair of the nominal values that are adjacent to one another in the set of the nominal values. Soft metrics are computed responsively to the multiple comparison results. The ECC is decoded using the soft metrics, so as to extract the data stored in the analog memory cells.