Abstract: A data processing apparatus includes a ROM (Read Only Memory) having a validity verification program stored therein, an auxiliary storage device including a plurality of storage areas having a plurality of target verification data stored therein, an execution unit configured to perform a validity verification process on the plural target verification data in accordance with the validity verification program. An order of priority is assigned to the plural target verification data. The plural storage areas have addresses that is recognizable by the execution unit. The execution unit is configured to determine validity of each of the plural target verification data based on the order of priority until one of the plural target verification data is determined to be valid.

Abstract: A semiconductor package includes a memory controller chip, a plurality of first memory chips configured to store normal data, a second memory chip configured to store error information for correcting or detecting error of the normal data, and an interface unit configured to interface the memory controller chip, the plurality of first memory chips, and the second memory chip.

Abstract: A resistance change memory device including a cell array, in which memory cells are arranged, the memory cell being reversibly set in one of a first data state and a second data state defined in accordance with the difference of the resistance value, wherein the memory device has a data write mode including: a first write procedure for writing the first data in the cell array; and a second write procedure for writing the second data in the cell array.

Abstract: Mechanisms for controlling an operation of one or more cores on an integrated circuit chip are provided. The mechanisms retrieve, from an on-chip non-volatile memory of the integrated circuit chip, baseline chip characteristics data representing operational characteristics of the one or more cores prior to the integrated circuit chip being operational in the data processing system. Current operational characteristics data of the one or more cores are compared with the baseline chip characteristics data. Deviations of the current operational characteristics data from the baseline chip characteristics data are determined and used to determine modifications to an operation of the one or more cores. Control signals are sent to one or more on-chip management units based on the determined modifications to cause the operation of the one or more cores to be modified.

Abstract: Methods, apparatus and computer readable medium for handling error correction in a memory are disclosed. In some embodiments, first data is written to the memory, and a value(s) of an operational parameter(s) that is a consequence of the writing of the first data is determined. Second data is read from the memory, and the value(s) of the operational parameter(s) may be used when correcting errors in the second data. In some embodiments, the first data is the same as the second data. The presently-disclosed teachings are applicable to any kind of memory including (i) non-volatile memories such as flash memory, magnetic memory and optical storage and (ii) volatile memory such as SRAM or DRAM.

Abstract: The invention provides a data storage device. In one embodiment, the data storage device comprises a memory and a controller. The memory is for data storage. When the data storage device receives first source data to be written to the memory from a host, the controller generates at least one first input data according to the first source data, scrambles the first input data according to a plurality of pseudo random sequences to obtain a plurality of first scrambled signals, calculates a plurality of transmission powers of the first scrambled signals, and selects a target scrambled signal with a lowest transmission power to be stored in the memory from the first scrambled signals.

Abstract: Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. For acceptable quality assurance, conventional error correction codes (“ECC”) have to correct a maximum number of error bits up to the far tail end of a statistical population. The present memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. If excessive error bits (at the far tail-end) occur after writing a group of data to the second portion, the data is adaptively rewritten to the first portion which will produce less error bits. Preferably, the data is initially written to a cache also in the first portion to provide source data for any rewrites. Thus, a more efficient ECC not requiring to correcting for the far tail end can be used.

Abstract: To decrease the burden of digital processing, provided is an AD conversion apparatus comprising a pattern generating section that, for each target bit specified one bit at a time moving downward in the output data, generates a pattern signal having a pulse width or number of pulses corresponding to a weighting of the target bit; an integrating section that integrates the pattern signals according to a judgment value for judging a value of the target bit each time a pattern signal is generated, and outputs a reference signal obtained by accumulating the integrated value of each pattern signal; a comparing section that, each time generation of a pattern signal is finished, compares the input signal to the reference signal; and an output section that outputs the output data to have values corresponding to the comparison results obtained after each generation of a pattern signal corresponding to a bit is finished.

Abstract: A post-write read operation, using a combined verification of multiple pages of data, is presented. In a simultaneous verification of multiple pages in a block, the controller evaluates a combined function of the multiple pages, instead of evaluating each page separately. In one exemplary embodiment, the combined function is formed by XORing the pages together. Such a combined verification of multiple pages based on the read data can significantly reduce the controller involvement, lowering the required bus and ECC bandwidth for a post-write read and hence allow efficient post-write reads when the number of dies is large.

Abstract: Techniques for a post-write read are presented. In an exemplary embodiment, host data is initially written into the non-volatile memory in binary form, such as a non-volatile binary cache. It is then subsequently written from the binary section into a multi-state non-volatile section of the memory. After being written in multi-state format, pages of data from a multi-state block can then be checked against there source pages in the binary section to verify the quality of the multi-state write. This process can be performed on the memory device itself, without transferring the pages out to the controller.

Abstract: A memory circuit including a logic circuit, content addressable memory, and a multiplexer. The logic circuit is configured to output a first address. The content addressable memory is configured to i) receive the first address and ii) output a substitute address and a match signal if the first address matches a second address stored in the content addressable memory. The multiplexer is configured to i) receive the first address and the substitute address and ii) selectively output one of the first address and the substitute address based on the match signal.

Abstract: A flash memory includes a memory sector, a command interface, a first signal buffer, a control signal generation circuit, a data input buffer, an error correction circuit, an address buffer, an address signal generation circuit, a plurality of data memory circuits, and write circuit. The command interface receives a write data input instruction from an external device to generate a write data input instruction signal, and receives a write instruction from the external device to generate a write instruction signal. The error correction circuit is activated by the write data input instruction signal to receive the write data in synchronization with the write enable signal, and is activated by the write instruction signal to generate a check data for an error correction in synchronization with the control signal.

Abstract: A processor includes an arithmetic device, a storage device that holds arithmetic data, a data generator that generates test data, an address generator that generates an address at which the test data is to be written, a test data number counter that counts a number of test data, an error information holder that holds mismatch error information, an error occurrence bit position holder that holds a position of a bit at which a mismatch error has occurred, an error occurrence test data number holder that holds number of test data counted by the test data number counter, and a comparator that compares test data written to the storage device with test data read from the storage device and stores error information in the error information holder and a position of a bit and number of the test data in which the mismatch error has occurred.

Abstract: A self-testing memory module includes a printed circuit board configured to be operatively coupled to a memory controller of a computer system and includes a plurality of memory devices on the printed circuit board, each memory device of the plurality of memory devices comprising data, address, and control ports. The memory module also includes a control module configured to generate address and control signals for testing the memory devices. The memory module includes a data module comprising a plurality of data handlers. Each data handler is operable independently from each of the other data handlers of the plurality of data handlers. Each data handler is operatively coupled to a corresponding plurality of the data ports of one or more of the memory devices and is configured to generate data for writing to the corresponding plurality of data ports.

Abstract: This disclosure is related to measurement of latency in data paths. A latency measurement may be accomplished by calculating a roundtrip write-to-read latency based on generating a write signal and receiving a read signal approximately simultaneously. The read signal may be based on a coupling between a write element and read element. A device setting may then be adjusted based on the calculated roundtrip write-to-read latency. Further, a read/write mechanism that is used to write user data to and read user data from a data storage medium may be used to determine the roundtrip write-to-read latency. Even further, the roundtrip write-to-read latency may be determined in real-time as the data storage device is in operation.

Abstract: A test system for testing a communication system having a plurality of communication links is disclosed. The test system has a single tester for performing various measurement and diagnostic tasks on a single link. The test system also has a switching system for independently testing any link by coupling the tester into any one link. The tester is coupled into the link by coupling the tester input to the link's transmitter and the tester output to the link's receiver. The switching system couples the tester such that all remaining links of the communication system have a unique one of the plurality of transmitters coupled to a unique one of the plurality of receivers, whereby the operation of the communication system can be maintained while testing individual links.

Abstract: Various approaches for determining storage medium health. For example, a storage device is disclosed that includes a storage medium and a data processing circuit. The data processing circuit receives a data set derived from the storage medium. The data processing circuit includes a data detector circuit, a data decoder circuit, and a health detection circuit. The data detector circuit receives the data set and provides a detected output. The data decoder circuit receives a derivative of the detected output and provides a decoded output. The health detection circuit receives an indication of a number of times that the data set is processed through the combination of the data detector circuit and the data decoder circuit, and generates an indirect health status of the storage medium using the number of times that the data set is processed through the combination of the data detector circuit and the data decoder circuit.

Abstract: Provided is a semiconductor memory device supporting a read data bus inversion (RDBI) function and a method of testing the semiconductor memory device. The method includes: providing data of an input test pattern to data input/output pads; including the data of the input test pattern in a data bus through a memory cell core block; if the data on the data bus satisfy an inversion condition, inverting and outputting the data on the data bus, and generating a flag signal indicating that the data on the data bus are inverted; comparing each of the inverted data on the data bus with the flag signal and transmitting resultant data to the data input/output pads; and determining whether the resultant data transmitted to the data input/output pads are data of an output test pattern.

Abstract: An FPGA configuration device comprises: a read operation control unit which performs control to read configuration data from a configured FPGA; and a configuration data transfer unit which transfers the configuration data read out of the FPGA to a memory.

Abstract: A method for testing a primary memory of control and regulation electronics of a frequency converter is described. The primary memory includes (i) at least one matrix of memory cells, (ii) means for addressing the at least one memory cell matrix, and (iii) a write/read circuit The method includes examining at least a part of the means for addressing with regard to address errors and examining at least a part of the memory cells with regard to cell errors. The examining steps are performed independently of one another. The examining at least a part of the means for addressing includes examining individual address bits of an n-bit wide address bus in steps that are performed independently of one another. The examining is dependent on use of the primary memory for operation of the frequency converter.

Abstract: A loopback card includes a connector configured to connect to an IO interface and emulate a storage device interface. The connector includes a port configured to receive a set of signals from the IO interface and transmit them to a redriver. The connector is configured to receive the set of signals from the redriver and transmit them from the redriver to the IO interface. The connector includes control signal inputs configured to receive control signals from the IO interface. The connector further includes one or more logic gates configured to receive the control signals. The one or more logic gates apply a logic operation on the control signals to generate an output and route the output to the IO interface through the connector. The redriver is operably connected to the port and configured to receive the set of signals from the port and transmit them back to the port.

Abstract: A method of testing a memory includes generating a plurality of addresses, such as a test address, accessing contents of each of the plurality of addresses and storing them in storage circuitry, performing a test on the plurality of addresses, accessing the memory test circuitry by sending an access address to snooping circuitry, determining if the access address matches at least one of the plurality of addresses and generating at least one hit indicator in response thereto, generating a snoop miss indicator, determining if the snoop miss indicator indicates a miss, if the snoop miss indicator indicates a miss, accessing the memory in response to the access address, and if the snoop miss indicator does not indicate a miss, either storing snooped data from a interconnect master to a selected portion of the storage circuitry or reading the snooped data from the selected portion of the storage circuitry to the interconnect master.

Abstract: In a sophisticated semiconductor device including a large memory portion, a built-in self-test circuitry comprises a failure capturing logic that allows the capturing of a bitmap at a given instant in time without being limited to specific operating conditions in view of interfacing with external test equipment. Thus, although pipeline processing may be required due to the high speed operation during the self-test, reliable capturing of the bitmap may be achieved while maintaining high fault coverage of the test algorithm under consideration.

Abstract: The invention provides a test circuit for n input/output arrays. Each of the n input/output arrays has M pairs of input/output. The test circuit includes M write drivers and M comparing circuits. The ith write driver provides an ith test signal to the ith inputs of all of the n input/output arrays, and 1?i?M. The jth comparing circuit determines if jth output signals of all of the n input/output arrays are the same, and outputs a jth comparing result correspondingly, and 1?j?M. The invention also provides a method of testing n input/output arrays. The invention also provides a storage device.

Abstract: A semiconductor memory device includes a plurality of memory cells; a data comparison section configured to compare input data to be stored in the memory cells with output data outputted from the memory cells in a test operation, an address storage section configured to store addresses corresponding to defected memory cells of the memory cells in response to a comparison result of the data comparison section, and a comparison period control section configured to generate a period control signal for controlling an activation period of the data comparison section.

Abstract: A request processing device includes a request sender that sends a write request or a read request to a storage device, a response processor that receives a response to a request which the request sender has sent, and a test request processor that converts a read response which is a response to a read request, into a test write request, and converts a write response which is a response to a write request into a test read request, from among responses that the response processor has received or from among responses that have been input from a device which is provided outside the request processing device.

Abstract: A memory circuit including a logic circuit, content addressable memory, and a multiplexer. The logic circuit is configured to output a first address. The content addressable memory is configured to i) receive the first address and ii) output a substitute address and a match signal if the first address matches a second address stored in the content addressable memory. The multiplexer is configured to i) receive the first address and the substitute address and ii) selectively output one of the first address and the substitute address based on the match signal.

Abstract: According to one embodiment, a semiconductor integrated circuit includes at least one memory and at least one built-in self test (BIST) circuit. In the memory, data can be stored. The BIST circuit tests the memory and includes an address generator. The address generator operates in one of a first operating mode and a second operating mode. In the first operating mode, address signals corresponding to all addresses of the memory are generated. In the second operating mode, the address signals are generated such that each bit of an address input of the memory can be one signal state of both 0 and 1 and such that different bits constitute a set of pieces of data in which the bits choose different signal states at least once.

Abstract: A test apparatus includes a fail memory (AFM) for storing therein fail information in association with each of the addresses of a memory under test and a mark memory (CMM) for storing therein, in association with each of the addresses of the memory under test, validity information indicating whether the fail information stored in the AFM is valid. When the validity information read from the CMM in association with an address under test indicates that the fail information that has been stored in the AFM is invalid, the test apparatus overwrites the fail information stored in the AFM with the fail information that is newly generated by a current test. On the other hand, when the validity information read from the CMM indicates that the fail information is valid, the test apparatus updates the fail information stored in the AFM with the new fail information and writes the updated fail information back into the AFM.

Abstract: Memory performance in programmable logic is significantly increased by adjusting circuitry operation to adjust for variations in process, voltage, or temperature. A calibration circuit adjusts control signal timing, dynamically and automatically, to compensate real time to process, voltage, and temperature variation. A feedback system using a control block and a dummy mimicking concept are provided.

Abstract: One or more embodiments of the invention enable a memory device to load its memory array with desired background data, such as to reduce total test time and costs associated with testing. A background data loading circuit according to one embodiment of the invention includes a buffer, a data loading circuit, and a pattern generating logic. The buffer is coupled to the array of memory cells. The data loading circuit is coupled to load data into the buffer to be transferred to a respective row of the memory cells. The pattern generating logic is coupled to the data loading circuit. The pattern generating logic applies a pattern generating algorithm corresponding to a test mode when the memory devices is in the test mode and generates patterns of data each for a respective row of the memory cells according to the pattern generating algorithm.

Abstract: A read value that is read from a multi-level storage device is received, as are a set of bins having bin ranges and (for each of the bins in the set) a corresponding portion of read values which fall into that particular bin. One or more of the bin ranges is adjusted such that the received portions of read values remain substantially the same after adjustment and after assignment of the read value to one of the set of bins after adjustment.

Abstract: Methods for at-speed testing of a memory interface associated with an embedded memory involves in general two write operations in succession, two read operations in succession, and a capture operation using scan cells. The write and read operations may be performed during a single clock burst, two separate clock bursts in a clock signal, or two separate clock bursts in separate clock signals.

Abstract: Techniques for writing to memory using adaptive write techniques. An adaptive write technique includes receiving at a computer a message including a plurality of symbols. The message is written to a memory. The writing to memory includes performing for each symbol in the message: writing a data value to a memory location in the memory and reading contents of the memory location after the data value has been written. The data value is determined at the computer in response to the symbol and to the contents of any memory locations previously read as part of writing the message to the memory. It is determined at the computer if the contents of the memory locations reflect the message. The writing is restarted at the computer in response to determining that the contents of the memory locations do not reflect the message.

Abstract: A data writing method for a re-writable non-volatile memory module and a memory controller and a memory storage apparatus using the same are provided, wherein the re-writable non-volatile memory module has a plurality of physical writing units, and each of the physical writing units has a plurality of physical writing segments. The data writing method includes identifying at least one non-used segment among the physical writing segments of each of the physical writing units and writing a plurality of segment data streams into the physical writing units, wherein the non-used segments of the physical writing units are not used for writing the segment data. Accordingly, the data writing method can effectively use normal physical writing segments in the physical writing units.

Abstract: Provided are an apparatus and method for detecting a memory access error in a computer system. The apparatus and method may intercept a sub-system that processes a request for access to a memory, and may be applied to various computer systems without causing any performance deterioration. The apparatus includes a sub-system configured to process a request for access to a memory, and an interception module configured to detect a memory access address by intercepting the sub-system.

Abstract: An integrated circuit test controller and method defining a number N of failure events, applying the test to an integrated circuit under test by applying a predetermined sequence of input and output operations according to a test algorithm. Output data is compared to expected data, and a failure signal is generated when the output data does not correspond to the expected data. If a failure signal is generated, failure data related to the failure event is stored in a failure data register set. If the number N of failure events has been reached or if there are no more tests left, the content of the data failure register set is read out through a parallel failure data output port.

Abstract: A semiconductor memory device includes a plurality of banks, each including a plurality of first memory cells and a plurality of second memory cells, a first input/output unit configured to transfer first data between the first memory cells and a plurality of first data pads; a second input/output unit configured to transfer second data between the second memory cells and a plurality of second data pads, a path selection unit configured to transfer the first data, which are input through the first data pads, to both the first and second memory cells, during a test mode, and a test mode control unit configured to compare the first data of the first and second memory cells, and to control at least one of the first data pads to denote a fail status based on a comparison result, during the test mode.

Abstract: Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. For acceptable quality assurance, conventional error correction codes (“ECC”) have to correct a maximum number of error bits up to the far tail end of a statistical population. The present memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. If excessive error bits (at the far tail-end) occur after writing a group of data to the second portion, the data is adaptively rewritten to the first portion which will produce less error bits. Preferably, the data is initially written to a cache also in the first portion to provide source data for any rewrites. Thus, a more efficient ECC not requiring to correcting for the far tail end can be used.

Abstract: A method for testing a memory device is disclosed. The method includes: respectively writing at least one test data into a plurality of storage blocks in the memory device such that a plurality of first time written test data are stored in the storage blocks; in a read with write back test mode, reading the first time written test data from the storage blocks in the memory device and writing the plurality of first time written test data into the storage blocks to generate a plurality of second time written test data; and in a compress test mode, reading the plurality of second time written test data from the storage blocks by a compress test operation and determining whether the memory device operates erroneously according to the plurality of second time written test data and the test data.

Abstract: A semiconductor integrated circuit includes memories, a BIST circuit, and an analyzer. The BIST circuit includes a test controller performing the test and generating a memory selection signal selecting a memory to be tested, an address generator generating write and read addresses, a data generator generating write data and an expected output value, and a control signal generator generating a control signal. The analyzer includes a memory output selector selecting output data, a bit comparator comparing the output data with the expected output value, an error detection unit determining whether there is an error in the memory, a plurality of pass/fail flag registers capable of storing a pass/fail flag, a repair analyzer analyzing a memory error and generating a repair analysis result, a plurality of repair analysis result registers capable of storing the repair analysis result, and an output unit outputting the pass/fail flag and the repair analysis result.

Abstract: Testing system capable of detecting different kinds of memory faults of a memory under I/O compression includes a data pattern selection circuit, writing pattern selection units, reading pattern selection units, and a data comparison circuit. The data pattern selection circuit converts a testing data into different data patterns by the writing pattern selection units and accordingly writes to the corresponding memory data ends in order to allow the corresponding memory cells to store the data with the corresponding data pattern. The data comparison circuit executes reverse-converting through the reading pattern selection units for comparing if the data stored in the memory cells corresponding to each memory data end are matched and accordingly determines if a failure memory cell exists in the memory.

Abstract: An apparatus and method for a processor-memory unit for use in system-in-package (SiP) and system-in-package (SiP) integrated circuit devices. The apparatus includes a processing module, a memory module and a programmable system module. The programmable system module is configured to function as an interface between the memory module and the processing module, or as an interface between the memory module and a testing device. The invention facilitates integration and testing of processor-memory units including functional components having different communication protocols.

Abstract: A technique for blind channel estimation is disclosed herein. A read value that is read from a multi-level storage device is received, as are a set of bins having bin ranges and (for each of the bins in the set) a corresponding portion of read values which fall into that particular bin. One or more of the bin ranges is adjusted such that the received portions of read values remain substantially the same after adjustment and after assignment of the read value to one of the set of bins after adjustment.

Abstract: Provided is a test apparatus that tests a memory under test, comprising a logic comparing section that compares output data output from the memory under test to expected value data, for each address of the memory under test, and outputs fail data when the output data does not match the expected value data; a fail analysis memory section that stores the fail data in association with the addresses of the memory under test; and a masking section that counts the pieces of fail data output from the logic comparing section and, when the count value exceeds a preset upper limit fail value, masks the fail data supplied from the logic comparing section to the fail analysis memory section.

Abstract: A computer system comprising a processor, a memory, and a memory controller coupled to the processor and the memory is provided. The memory controller comprises a first cache and a cache control. The cache control is configured to cause a portion of the memory to be copied into the first cache. The cache control is configured to cause first information to be provided from the first cache to the processor in response to receiving a read transaction from the processor that includes an address in the portion of memory during testing of the portion.

Abstract: Electronic apparatus, systems, and methods of operating and constructing the electronic apparatus and/or systems include an embedded processor disposed in a logic chip to direct, among other functions, self-testing of an electronic device structure in conjunction with a pattern buffer disposed in the logic chip, when the electronic device structure is coupled to the logic chip. Additional apparatus, systems, and methods are disclosed.

Abstract: A one-hot data generating unit generates one-hot data for the maximum data bit width in which a state of one bit is exclusively inverted with respect to states of other bits while sequentially shifting a bit position to be inverted, and writes the one-hot data in an area of a memory designated by an address. A short defect between wirings connected to the memory is detected by comparing the one-hot data written in the memory with the one-hot data before being written.

Abstract: A universal memory interface on an integrated circuit includes an external memory interface unit operable to perform data rate conversion for a data signal between a first rate associated with the integrated circuit and a second rate associated with a memory system. The universal memory interface also includes a sequencer unit operable to calibrate at least one of a delay for the data signal and a delay for a strobe for the data signal by executing a calibration procedure instruction.

Abstract: A memory system has a redundancy coding circuit that performs redundancy coding process for write data, an inverter circuit which inverts values of individual bits of the data that has resulted from the redundancy coding process, a selector which selects the data that has resulted from the redundancy coding process or data that has been inverted by the inverter circuit based on a selecting signal, a memory which stores the selected data, a comparator which compares data read from the memory with the selected data and outputs a comparison result, a write control circuit which generates the selecting signal based on the comparison results, and a redundancy decoding circuit that performs a redundancy decoding process for data read from the memory to output the processed data.