Abstract: A system for detecting write errors in a storage device is disclosed. The system includes a storage device having means for storing one or more data blocks in a storage group. The storage group includes one or more data blocks and a check block having one of the group of: a combination of the one or more data blocks of the storage group, a combination of one or more bits of a logical block address associated with the storage group, and a combination of one or more bits of a phase field that is updated each time the storage group is written. The system also includes means for updating the check block each time the storage group is written, and means for detecting write errors by checking the check block when a storage group is read.

Abstract: A type of flaw present in a mass storage device can be inferred by examining the results of I/O operations performed on only a portion of the device, without testing or examining the entire device.

Abstract: An integrated memory includes a circuit for testing the operation of the memory, a register circuit is used for storing a bit combination, compression unit, to receive test data which have been read from the memory cells, and a memory unit to store a plurality of bits from a compressed bit fail map. Each of the bits is associated with a different address region. One of the bits registers an error data item within the associated address region. In addition, a decoder circuit is provided for receiving the compressed address and for accessing that bit in the memory unit, which is associated with a respective address region on the basis of the compressed address. A short evaluation time for a function test on the memory and flexible alignment with the individual memory size are made possible.

Abstract: Persistent files stored in non-XIP flash memory are accessed during operation of an electronic device. During execution of application code on the device, the persistent files are accessed using an access directory such as a look-up table. The access directory provides information that allows an application or other software code running on the processor of the device to locate and access a persistent file within a non-XIP flash memory device where the non-XIP flash memory device may include bad blocks. During creation of the access directory, locations of the bad blocks in the device are identified and recorded. Files are accessed from the non-XIP flash memory device by reading from file start locations identified in the access directory while accounting for bad blocks identified in the bad block data of the access directory.

Abstract: A system and method for logging and storing failure analysis information on disk drive so that the information is readily and reliably available to vendor customer service and other interested parties is provided. The information, in an illustrative embodiment, is stored on a nonvolatile (flash) random access memory (RAM), found generally in most types of disk drives for storage of updateable disk drive firmware. A known location of limited size is defined in the flash RAM, to form a scratchpad. This scratchpad is a blank area of known addresses, formed during the original firmware download onto the memory, and which is itself free of firmware code. This scratchpad is sufficient in size to write a series of failure codes in a non-erasable list as failures/errors (and user/administrator attempts to unfail the disk) are logged.

Abstract: There is provided a test apparatus for testing a memory-under-test for storing data strings to which an error correcting code has been added, having a logical comparator for comparing each data contained in the data string read out of the memory-under-test with an expected value generated in advance, a data error counting section for counting a number of data inconsistent with the expected value, a plurality of registers, provided corresponding to each of a plurality of classes, for storing an upper limit value of a number of errors contained in the data -under-test to be classified into the class, comparing sections for comparing each of the plurality of upper limit values stored in the plurality of registers with the counted value of the data error counting section and a classifying section for classifying the memory-under-test into the class corresponding to the register storing the upper limit value which is greater than the counted value.

Abstract: A system that facilitates distinguishing between soft errors and the onset of hardware degradation in a computer system. During operation, the system receives notifications of correctable-error events from a plurality of memory components. The system then averages numbers of correctable-error events from the plurality of memory components to generate an average number of correctable-error events across the plurality of memory components. The system subtracts the number of correctable-error events for a given memory component in a given time interval from the average number of correctable-error events to generate a residual number of correctable-error events for the given memory component in the given time interval.

Abstract: Read and write data steering logic in the I/O of a memory array is tested by providing a data bus lane for each addressable subunit of a memory array storage location. Each bus lane is connected to the data input of a comparator. A BIST controller writes test patterns to the memory through the write steering logic and reads the test patterns in parallel to test the write steering logic. The BIST controller writes test patterns to the memory in parallel and reads the test patterns through the read steering logic to test the read steering logic. In both cases, a separate comparator dedicated to each bus lane verifies that the subunit data was properly shifted between the data bus lane and memory storage location subunit. The comparators are effectively disabled during normal operations to prevent logic gate switching.

Abstract: A method of testing a dynamic random access memory (DRAM) device that has N rows of storage cells and that requires, in at least one operating mode, at least N refresh commands to be received from an external source within a specified time interval. The rows of storage cells are tested in a first retention test to identify rows that fail to retain data over the specified time interval. The rows that fail to retain data over the specified time interval are tested in a second retention test to identify rows that retain data over an abbreviated time interval, the abbreviated time interval being shorter than the specified time interval.

Abstract: A bit fail map circuit accurately generates a bit fail map of an embedded memory such as a DRAM by utilizing a high speed multiplied clock generated from a low-speed Automated Test Equipment (ATE) tester. The circuit communicates between the ATE tester, the embedded memory under test, Built-In Self-Test (BIST) and Built-In Redundancy Analysis (BIRA). An accurate bit fail map of an embedded DRAM memory is provided by pausing the BIST test circuitry at a point when a fail is encountered, namely a mismatch between BIST expected data and the actual data read from the array, and then shifting the bit fail data off the chip using the low-speed ATE tester clock. Thereafter, the high-speed test is resumed from point of fail by again running the BIST using the high-speed internal clock, to provide at-speed bit Fail Maps.

Abstract: Memory array built in self testing utilizing including a simple data history table. The table is used to track failing locations observed during any level of assembly test of processor or logic semiconductor chips where the chips contain SRAM macros with redundant elements for failure relief.

Abstract: According to embodiments of the present invention, an integrated circuit such as a processor includes a counter to count an actual number of unreliable storage locations in the processor cache, at least one register to store an acceptable number of unreliable storage locations for the cache, a detector to measure a thermal environment of the processor, and circuitry to raise an operating voltage of the processor if the actual number of unreliable storage locations exceeds the acceptable number of unreliable storage locations, and if the thermal environment is acceptable.

Abstract: A memory device has a number of memory segments connected to a supply source through a supply control circuit. If one of the memory segments is defective, the supply control circuit isolates the defective memory segment from the supply source. The memory device replaces the defective memory segment with a redundant segment.

Abstract: Method for determining a repair solution for a memory module in a test system, memory areas of the memory module being successively tested in order to obtain, for each memory area, a defect datum which specifies whether the respective memory area is defective, wherein defect addresses, the address values of which specify the defective memory areas of the memory module, are generated from addresses of the memory areas and the associated defect data, the defect addresses being stored in the test system, the repair solution being determined from the stored defect addresses.

Abstract: A flash memory device for performing a bad block management and a method of performing bad block management are implemented in hardware level. During a booting procedure of a flash memory device, a bad block-mapping table stored in a predetermined block of memory cell array unit or other nonvolatile memory is stored in a bad block mapping register via a bad block-mapping table loader. An address selector receives a logical address from an external device and compares the logical address with a bad block address stored in the bad block mapping register. A bad block-state controller determines a count number of a re-mapping mark and outputs a re-mapping mark flag to the address selector. The address selector selects a logical address or a bad block address received from the bad block mapping register as a physical address and outputs the physical address to the memory cell array unit.

Abstract: There is provided a test apparatus for testing a memory under test that includes therein a plurality of blocks and one or more repairing columns.

Abstract: According to one embodiment, a method comprises detecting a defect in a portion of memory. The method further comprises designating the portion of memory as defective, and avoiding attempts to access the portion of memory designated as defective.

Abstract: The invention relates to a test method for determining a wire configuration for a circuit carrier having at least one component arranged thereon, where internal lines in the component are connected to component connections in a prescribed order, and where the component connections are wired to connections on the circuit carrier. According to the method, a respective prescribed test signal is applied to each internal line of the component using a controllable test signal generator integrated in the component. Output signals applied to the connections of the circuit carrier are tapped off. Thereafter, the respective output signals tapped off are identified with the corresponding test signals applied to the internal lines of the component using an external test apparatus for determining the wire configuration between the component connections and circuit carrier connections.

Abstract: Disclosed are systems and methods for logging errors comprising at least one register for storing header packet information, a controller operable to determine if a received packet of one or more packets forming an information communication comprises a header packet and to store the header packet in said at least one register, and error logging circuitry coupled to the register operable to create an error log entry using header information retrieved from the register when an error is detected with respect to any of the one or more packets of the information communication.

Abstract: A memory device is described that uses extra data bits stored in a multi-level cell (MLC) to provide error information. An example embodiment provides a memory cell that uses more than 2X logic levels to store X data bits and an error bit. At least one extra bit provided during a read operation is used to provide error information or a confidence factor of the X data bits originally stored in the cell.

Abstract: Methods of performing a sector erase of flash memory devices incorporating built-in self test circuitry are provided. The present invention employs an interactive verification and sector erase algorithm to verify and repeatedly erase the sector until a portion of the groups of each page of the sector are erased or a first maximum number of erase pulses is achieved. The algorithm further includes a word verification and erase operation that sequentially verifies and erases each word of the sector until each word is erased or a second maximum number of erase pulses is achieved. The second maximum number of erase pulses may be based on a function of the first maximum number of erase pulses. The second maximum number of erase pulses may be input to the sector erase algorithm as a multi-bit code. The second maximum number of erase pulses and conversion of the multi-bit code may be based on a binary multiple of the first maximum number of erase pulses.

Abstract: Various methods and apparatuses are described in which a repair data container may store a concatenated repair signature for multiple memories having one or more redundant components associated with each memory. A processor contains redundancy allocation logic to execute one or more repair algorithms to generate a repair signature for each memory. The repair data container may store actual repair signatures for each memory having one or more defective memory cells detected during fault testing and dummy repair signatures for each memory with no defective memory cells. The processor may contain logic configured to compress an amount of bits making up the concatenated repair signature, to decompress the amount of bits making up the concatenated repair signature, and to compose the concatenated repair signature for all of the memories sharing the repair data container. The repair data container may have an amount of fuses to store the actual repair signatures for an adjustable subset of the multiple memories.

Abstract: This invention provides a method for creating/writing defect management information of an information recording medium and an apparatus and optical disc based on the method. In the present invention, it depends on the type of data to be reproduced whether or not defective sectors which are detected during reproduction operation are replaced with non-defective sectors. If read-out errors are detected in reproducing non-audio/video data, linear replacement algorithm is applied to the corresponding defective sectors. On the other hand, in case of audio/video data, location information of the corresponding defective sectors is just kept without any sector replacement. Therefore, this invention enables to reproduce audio/video data in real-time regardless of the presence of defective sectors and to avoid writing data to the defective sectors when new data is overwritten to the information recording medium.

Abstract: A host device 1 includes an NG table 10 for storing addresses specifying areas of a bulk memory 3 into which data cannot be written, a performance-guaranteed environment determination means 11 for determining whether or not the current environment of the bulk memory 3 is outside a performance-guaranteed environment where the performance of the bulk memory 3 is guaranteed, and control means 12, 13, 14, and 15 for writing data in an area of the bulk memory which is specified by an address which is not stored in the NG table 10 when the performance-guaranteed environment determination means 11 determines that the current environment is outside the performance-guaranteed environment. Therefore, even if the current environment of the bulk memory is outside the performance-guaranteed environment, the host device can normally write data in the bulk memory, thereby improving the reliability of the system.

Abstract: Through addressing circuitry, a sampling circuit can choose a unique internal node/signal on an encapsulated/packaged chip to be output to one or more drivers. The chosen signals available at the target node are directed either through a select circuit to an output pin, or directly to an output pin. In a preferred mode, decode circuits used to select a unique node are serially connected, allowing for a large number of signals to be made available for analyzing without a large impact on circuit layout. Because of the rules related to abstracts, this abstract should not be used in the construction of the claims.

Abstract: Accordingly, there has been described a computer system with a plurality of memory components where individual bits from multiple words are distributed among the memory components. An error analyzer is operable to identify a memory component as potentially faulty by accessing a table mapping syndromes to memory components using generated syndromes.

Abstract: Methods and apparatus to track the health of integrated circuit structures are described. In an embodiment, a counter may be updated when the status of a portion of a storage unit (e.g., a cache) transitions to a defective status (e.g., as determined by reference to one or more corresponding status bits). The value stored in the counter may be compared with a threshold value, e.g., to generate a signal that is indicative of whether the threshold value has been exceeded. Other embodiments are also described.

Abstract: According to embodiments of the present invention, an integrated circuit such as a processor includes a counter to count an actual number of unreliable storage locations in the processor cache, at least one register to store an acceptable number of unreliable storage locations for the cache, a detector to measure a thermal environment of the processor, and circuitry to raise an operating voltage of the processor if the actual number of unreliable storage locations exceeds the acceptable number of unreliable storage locations, and if the thermal environment is acceptable.

Abstract: The present method generates a greater number of hot holes than those generated by normal write/erase operations, thereby making it possible to evaluate an operation of a non-volatile memory with respect to hot holes. The present method performs a write operation to the non-volatile memory at lower temperatures than normal temperatures at normal use or/and at a lower operation voltage than a normal operation voltage at normal use, so as to generate a greater number of hot holes than those generated by normal write/erase operations between floating gates and drains of the memory, and then evaluates the operation of the memory while exposing it to the normal operation temperatures. This method is applicable to reliability tests of non-volatile memories such as FLASH memories.

Abstract: In one embodiment, a chip-level architecture is provided comprising a monolithic three-dimensional write-once memory array and at least two of the following system blocks: an Error Checking & Correction Circuit (ECC); a Checkerboard Memory Array containing sub arrays; a Write Controller; a Charge Pump; a Vread Generator; an Oscillator; a Band Gap Reference Generator; and a Page Register/Fault Memory. In another embodiment, a chip-level architecture is provided comprising a monolithic three-dimensional write-once memory array, ECC, and smart write. The monolithic three-dimensional write-once memory array comprises a first conductor, a first memory cell above the first conductor, a second conductor above the first memory cell, and a second memory cell above the second conductor, wherein the second conductor is the only conductor between the first and second memory cells.

Abstract: A system for detecting write errors in a storage device is disclosed. The system comprises a storage device; within the storage device, means for storing one or more data blocks in a storage group, the storage group comprising the one or more data blocks and a check block, wherein the check block comprises one of the group of: a combination of the one or more data blocks of the storage group, a combination of one or more bits of a logical block address associated with the storage group, and a combination of one or more bits of a phase field that is updated each time the storage group is written; means for updating the check block each time the storage group is written; and means for detecting write errors by checking the check block.

Abstract: A system and method of providing error detection and correction capability in an IC using redundant logic cells and an embedded field programmable gate array (FPGA). The system and method provide error correction (EC) to enable a defective logic function implemented within an IC chip design to be replaced, wherein at least one embedded FPGA is provided in the IC chip to perform a logic function. If a defective logic function is identified in the IC design, the embedded FPGA is programmed to correctly perform the defective logic function. All inputs in an input cone of logic of the defective logic function are identified and are directed into the embedded FPGA, such that the embedded FPGA performs the logic function of the defective logic function.

Abstract: The invention relates to a memory circuit comprising regular memory areas and redundant memory areas, redundancy circuits in each case being assigned to the redundant memory areas, each redundancy circuit having permanently settable storage elements in order, in a first setting state, to address the assigned redundant memory area in the event of addressing of the regular memory area with a memory address determined by the first setting state, each redundancy circuit, in a second setting state, addressing the assigned redundant memory area in a manner dependent on an activation signal.

Abstract: An interleaving apparatus and method for an OFDM transmitter are provided. The interleaving apparatus comprises a memory unit, a memory write/read control unit, a memory access address generation unit, and a second permutation and output selection unit. The memory unit includes a plurality of memory banks, which are capable of being independently controlled so that data can be written or read in/from the memory banks, each having memory cells arranged in an N×M matrix structure. The memory write/read control unit generates control signals to write/read data in/from the memory unit. The memory access address generation unit generates a memory access address used to write/read data in/from the memory unit in response to the memory write/read control signals. The second permutation and output selection unit rearranges the positions of data bits output from the memory unit and outputs the position-rearranged data bits.

Abstract: A method and circuit for collecting memory failure information on-chip and unloading the information in real time while performing a test of memory embedded in a circuit comprises, for each column or row of a memory under test, testing each memory location of the column or row according to a memory test algorithm under control of a first clock, selectively generating a failure summary on-circuit while testing each column or row of the memory; and transferring the failure summary from the circuit under control of a second clock within the time required to test the next column or row, if any, of the memory under test.

Abstract: A write recovery strategy for optical recorders, whereby one good or certified disc extent is searched for once the disc is first loaded. The certified disc extent is reserved and is used as space to rewrite data for which initial writing attempts were unsuccessful. The reserved areas is used for write recovery at times of at the start, real-time AV data will not be lost and recording performance is improved. A series of lists are maintained including a reserved list of extents that are certified as being free of defects and lists for free and written areas of the disc. The defect list used is updated by the defect management scheme so that it is always up-to-date.

Abstract: An apparatus comprises at least one port for coupling signals to the apparatus, a mode selector for setting the apparatus to a normal mode or a debug mode, and a port control for controlling access to secure information in the apparatus through the port in accordance with the selected mode. A method for controlling access to the port is also provided.

Abstract: A memory cell test circuit for use in a semiconductor memory device having a plurality of banks connected to a plurality of global input/output lines, including: a plurality of bank switching units for transferring data outputted from the plurality of banks to the plurality of global input/output lines based on a test mode signal and a plurality of control clock signals; a logic operation unit for performing a logic operation to the data outputted to the plurality of global input/output lines and for outputting a result of the logic operation to a test global input/output line; and a switching unit coupled to the test global input/output line and the plurality of global input/output lines for selectively passing data of the test global input/output line and data of the global input/output lines based on the test mode signal and the plurality of control clock signals.

Abstract: A memory interface comprising a first data input for receiving a data line to be stored in memory, a bad chip register containing a bad chip value for identifying a bad memory chip of a memory device to be used with the memory interface, and a write shift logic circuit receiving the data line from the first data input. The data line contains a plurality of data bits and a plurality of check bits, the check bits being logically appended to one end of the data bits. The write shift logic, in response to the bad chip value, causes a portion of the data line to be shifted toward the one end of the bad memory chip.

Abstract: One embodiment of the present invention keeps a record of memory accesses by an operating system. The records can indicate which memory locations do not need to be checked in a later test. In one embodiment, memory blocks that have been accessed since a predetermined time are not checked in a later memory test. This reduces the time required for the later memory test.

Abstract: Automated facsimile monitoring methods, systems, and computer program products can track response data from multiple facsimiles sent to different locations and generate electronically accessible failure reports to allow for error or faults to be tracked and assessed to thereby allow corrective action to be initiated in a more timely manner.

Abstract: A fail bit map generation device quickly generating an FBM identifies an abnormal address from a first mismatch detection cycle number obtained in a shipment test and shipment sequence information used in the shipment test. The fail bit map generation device generates a bit identifying pattern that does not perform reading and writing at an address determined as being normal in the shipment test to compensate for read data information that is insufficient for generating the FBM. The fail bit map generation device identifies an abnormal bit from a second mismatch detection cycle number obtained by a tester with the bit identifying pattern and generates the FBM from the abnormal bit and the abnormal address.

Abstract: An internal signal monitoring device in a semiconductor memory device includes: an internal signal input unit to receive an internal signal to be monitored and having an output to provide a monitor source signal in response to a test mode signal; and an internal signal output unit having an input coupled to the output of the internal signal input unit, the internal signal output unit to transmit the monitor source signal to a predetermined pad of the semiconductor memory device in response to the test mode signal.

Abstract: A hierarchical encoding format for coding repairs to devices within a computing system. A device, such as a cache memory, is logically partitioned into a plurality of sub-portions. Various portions of the sub-portions are identifiable as different levels of hierarchy of the device. A first sub-portion may corresponds to a particular cache, a second sub-portion may correspond to a particular way of the cache, and so on. The encoding format comprises a series of bits with a first portion corresponding to a first level of the hierarchy, and a second portion of the bits corresponds to a second level of the hierarchy. Each of the first and second portions of bits are preceded by a different valued bit which serves to identify the hierarchy to which the following bits correspond. A sequence of repairs are encoded as string of bits. The bit which follows a complete repair encoding indicates whether a repair to the currently identified cache is indicated or whether a new cache is targeted by the following repair.

Abstract: In some embodiments, an apparatus to implement redundancy for failure masking in memory is disclosed. The apparatus comprises a built-in self test (BIST) log to store BIST data representing faulty columns of a memory, a redundancy configuration logic to generate one or more select signals based on the BIST data, an input shifter to map input data to one or more redundant columns of the memory, based on the one or more select signals, to avoid the faulty columns, and an output shifter to map output data from the one or more redundant columns of the memory, based on the one or more select signals, by bypassing the faulty columns. In one embodiment the memory is a static random access memory (SRAM). Other embodiments are also described.

Abstract: A method and apparatus for identifying defective cells in a memory array includes receiving a request for accessing an address and analyzing the address to determine when the address matches an address stored in a temporary memory array. When the address does not match any address stored in the temporary memory array, a wait instruction is sent to a processor and the address is analyzed to determine which portion of compressed data stored in a map memory array to decompress. The map memory array stores data containing compressed addresses of defective cells in a first memory array. The portion of compressed data is then decompressed to provide expanded data when the address does not match any address stored in the temporary memory array. The expanded data are then written to the temporary memory array, and the expanded data are compared to the address to determine when the address corresponds to an expanded datum of the expanded data.

Abstract: A test method for a semiconductor device that is provided with an ECC circuit that uses product code that is composed of a first code and a second code for implementing error correction of a memory, the test method includes steps of: obtaining first pass/fail determination results and second pass/fail determination results that are realized by independent correction operations based on the first code and the second code, respectively; recording the results in a first fail memory and a second fail memory, respectively; executing a prescribed logical operation such as an AND operation relating to the contents of the first fail memory and the contents of the second fail memory; and based on the results of the logical operation, remedying both fail bits and potential fail bits.

Abstract: A method for deferred logging of machine data following an error or event in order to capture critical information for that error or event treats the data as persistent and it does not get logged until a disruption occurs to the system (e.g. system reset, restart, deactivation, or powered-down). This way, important debug data can be held in the hardware or software, without a need for complicated hardware and code for logging this debug data. Methods are also disclosed for setting a switch to indicate deferred logging is required, referencing the log data with the original event information, calling home with the debug data, resetting the deferred logging switch, setting the deferred logging switch manually, viewing whether the switch is already set, and supporting different kinds of switches.

Abstract: A test apparatus for testing a device-under-test includes: a pattern generator configured to generate an address signal, a test signal, and an expected value signal; a logical comparator configured to compare an output signal outputted from the device-under-test with the expected value signal. The logical comparator generates a fail signal when the output signal is different from the expected value signal; and a failure analysis memory configured to receive the address signal from the pattern generator and to receive the fail signal from the logical comparator. The failure analysis memory includes: a first storage section configured to store a fail address value that corresponds to the fail signal and a fail data value included in the fail signal as a set of data; and a second storage section configured to read the set of data from the first storage section and to store the fail data value.

Abstract: A system chip has many local blocks including processor cores, caches, and memory controllers. Each local block has a local sample-select mux that is controlled by a local selection control register. The mux selects from among hundreds of internal sample nodes in the local block, and can also pass through samples output by an upstream local block. The selected samples from local blocks are sent to a central on-chip logic analyzer that compares the samples to a maskable trigger value. When the trigger value is matched, a trigger state machine advances, and samples are stored into a central capture buffer. A user debugging the chip can later read out the central capture buffer at a slower speed. Thousands of internal nodes from local blocks can be selected for sampling, triggering, and debugging. Local blocks include valid bits in 64-bit-wide samples. Only valid samples are written to the capture buffer.