Abstract: In an information processing apparatus for relaying a calling from a first module to a function inside a second module in software divided into a plurality of modules, the calling is relayed from the first module to the function inside the second module. A log in the second module corresponding to the calling is obtained. The log includes at least a write starting address of binary data and a data size thereof. An area where the binary data is written is determined based on the write starting address and the data size thereof. Whether or not writing into the decided area is permitted is determined. On the basis of the determination result, writing into the decided area of the binary data is controlled. As a result, writing into an invalid area of the log is prevented without modifying the software.

Abstract: A tester for testing a semiconductor device is disclosed. The tester for testing the semiconductor device employs a data selector for converting a logical test pattern data transmitted from a pattern generator into a physical test pattern data and an expected data based on the logical test pattern data, thereby generating various timings based on a time delay instead of using a plurality of clocks to improve a test efficiency and reduce a manufacturing cost.

Abstract: A test interface receives a test command designating execution of a test for a memory cell. The test storage circuit stores test information necessary to execute the test. The test storage circuit includes an erasable programmable storage unit. The decoder decodes the test command input to the test interface, and selects the test information stored in the test storage circuit. The sense amplifier reads out, from the test storage circuit, the test information selected by the decoder. The holding circuit holds the test information read out by the sense amplifier. The control circuit controls a test operation of checking whether the memory cell normally operates, on the basis of the test information held in the holding circuit. The defect storage circuit is formed for the memory cell, and stores fail information indicating that the memory cell is defective if the memory cell does not normally operate in the test operation.

Abstract: The present invention provides a method and system for improving memory testing efficiency, raising the speed of memory testing, detecting memory failures occurring at the memory operating frequency, and reducing data reported for redundancy repair analysis. The memory testing system includes a first memory tester extracting failed memory location information from the memory at a higher memory operating frequency, an external memory tester receiving failed memory location information at a lower memory tester frequency, and an interface between the first memory tester and the external memory tester. The memory testing method uses data strobes at the memory tester frequency to clock out failed memory location information obtained at the higher memory operating frequency. In addition, the inventive method reports only enough information to the external memory tester for it to determine row, column and single bit failures repairable with the available redundant resources.

Abstract: A method of verifying whether a recording and/or reproducing apparatus that records and/or reproduces a disc having temporary defect management area (TDMA) information properly produces the TDMA information, the method including producing TDMA information produced by performing a recording test according to a series of recording operations based on a scenario using a blank test disc as test information; and providing a result of the recording test by confirming the test information using reference test information for the recording test.

Abstract: A device records information in blocks having logical addresses at a physical address in a track on a record carrier. The logical addresses are translated into the physical addresses in dependence of defect management information, which includes defect entries indicating locations for replacing defective physical addresses. A read-only state of the record carrier is obtainable via a no-replacement state indicated by substantially none of the defect entries being free for use. The device has a read-only unit for setting the record carrier to the read-only state by reading original replacement information indicating a writable state, storing the original replacement information in a hidden area, and writing defect management information that is modified to the no-replacement state. The record carrier may be re-opened by retrieving the original replacement information from the hidden area.

Abstract: A resizable cache memory is disclosed. In a particular embodiment, a system is disclosed and includes a Built-In Self Test (BIST) circuit configured to test a cache memory. The system further includes a non-volatile storage device including an E-fuse array to store one or more indicators. Each indicator identifies a corresponding memory address of a failed location of the cache memory that has been detected by the BIST circuit.

Abstract: Disclosed are apparatus and methods for controlling a heterogeneous mixture of hardware devices in a variety of semiconductor process equipment. In general, a generic Input and Output (I/O) interface is provided between a process management module for specifying control operations and the actual hardware devices of a particular process tool. The process management module generally includes high level processes and/or user interfaces for controlling one or more process tool(s) by interacting with a set of generic device objects that are abstractions of actual hardware devices of such tool(s). The I/O interface translates interactions with the generic device objects into interactions with the different hardware devices. The process management module utilizes one or more of these generic device objects to specify operation, in a generic manner, of hardware devices and the I/O interface translates such operations into operations that are specific to the different hardware devices.

Abstract: Methods and apparatuses for enabling a redundant memory element (20) during testing of a memory array (14). The memory array (14) includes general memory elements (18) and redundant memory elements (20). The general memory elements (18) are tested and any defective general memory elements (18) are replaced with redundant memory elements (20). The redundant memory elements (20) are tested only when they are enabled.

Abstract: A semiconductor integrated circuit includes memories, a BIST circuit, and an analyzer. The BIST circuit includes a test controller performing the test and generating a memory selection signal selecting a memory to be tested, an address generator generating write and read addresses, a data generator generating write data and an expected output value, and a control signal generator generating a control signal. The analyzer includes a memory output selector selecting output data, a bit comparator comparing the output data with the expected output value, an error detection unit determining whether there is an error in the memory, a plurality of pass/fail flag registers capable of storing a pass/fail flag, a repair analyzer analyzing a memory error and generating a repair analysis result, a plurality of repair analysis result registers capable of storing the repair analysis result, and an output unit outputting the pass/fail flag and the repair analysis result.

Abstract: A method for testing a reliability of a solid-state storage medium is provided, wherein the solid-state storage medium has a plurality of blocks. First, a lifetime of each of the blocks of the solid-state storage medium is obtained. Then, an erase count of each of the blocks is obtained, and whether the erase count is greater than a predetermined erase count is determined. After that, those blocks having their erase counts greater than the predetermined erase count are accumulated to generate a problematic block number, and a test report is output.

Abstract: A method for managing defect blocks in a non-volatile memory essentially comprises the steps of detecting defect blocks in the non-volatile memory, storing addresses of the defect blocks in a table block of the non-volatile memory, and setting the non-volatile memory to be read-only if the quantity of defect blocks in the non-volatile memory exceeds a threshold and no free blocks remain in the non-volatile memory. In a preferred embodiment, the free pages in the defect block continue to be programmed before setting the non-volatile memory to be read-only.

Abstract: A method of recording a temporary defect list on a write-once recording medium, a method of reproducing the temporary defect list, an apparatus for recording and/or reproducing the temporary defect list, and the write-once recording medium. The method of recording a temporary defect list for defect management on a write-once recording medium includes recording the temporary defect list, which is created while data is recorded on the write-once recording medium, in at least one cluster of the write-once recording medium, and verifying if a defect is generated in the at least one cluster. Then, the method includes re-recording data originally recorded in a defective cluster in another cluster, and recording pointer information, which indicates a location of the at least one cluster where the temporary defect list is recorded, on the write-once recording medium.

Abstract: A test circuit arrangement for testing latch units is provided which includes a) a voltage generator configured to adjust a voltage potential difference between a first ground line and a second ground line of the latch units and/or to adjust a voltage potential difference between a first supply voltage line and a second supply voltage line of the latch units; b) combiner configured to combine logical outputs of the latch units; and c) determiner configured to determine the voltage potential difference between the first ground line and the second ground line and/or the voltage potential difference between the first supply voltage line and the second supply voltage line in a state when all of the latch units have identical logical outputs.

Abstract: A technique for identifying bad pages of storage elements in a memory device. A flag byte is provided for each page group of one or more pages which indicates whether the page group is healthy. Flag bytes of selected page groups also indicate whether larger sets of page groups are healthy, according to bit positions in the flag bytes. A bad page identification process includes reading the flag bytes with a selected granularity so that not all flag bytes are read. Optionally, a drill down process reads flag bytes for smaller sets of page groups when a larger set of page groups is identified as having at least one bad page. This allows the bad page groups to be identified and marked with greater specificity. Redundant copies of flag bytes may be stored in different locations of the memory device. A majority vote process assigns a value to each bit.

Abstract: Apparatus and methods are disclosed, such as those involving a memory device. One such memory device includes a memory array including a sub-array that includes a first number of columns of memory cells, and one or more global input/output (I/O) lines shared by the first number of columns for data transmission. The memory device also includes one or more multiplexers/demultiplexers, wherein each of the multiplexers/demultiplexers is electrically coupled to one or more, but not all, of the global I/O lines. The memory device further includes a plurality of local I/O lines, each configured to provide a data path between one of the multiplexers/demultiplexers and one or more, but less than the first number, of the columns in the sub-array. This configuration allows local I/O line repairability with fewer redundant elements, and shorter physical local I/O lines, which translate to improved speed and die size reduction.

Abstract: Embodiments herein may enable an algorithmic pattern generator (APG) to present iterative values of one or more operational parameters to a device under test (DUT). At each iteration, one or more test patterns may be presented to the DUT. The APG may capture test results from a set of iterations of the operational parameters. The APG may also write values associated with a next operational parameter to be iterated to a test parameter configuration space within the device tester.

Abstract: The present invention relates to a method of determining a corruption indication of a sequence (100) of encoded data frames distributed over a network, said data frames being encoded according to a predictive block-based encoding technique. Said method comprises the steps of: —decoding the sequence of encoded data frames so as to obtain a sequence of decoded data frames (200), —building a reliability map (210) including binary values based on the decoding step, a binary value being associated with a decoded data item in such a way that the binary value is equal to a first value (1) if its associated data item has not been decoded due to corruption or if said associated data item is predicted with reference to a reference data item that has not been decoded due to corruption, and to a second value (0) otherwise, —computing a corruption metric based on the binary values.

Abstract: SRAM macro sparing allows for full chip function despite the loss of one or more SRAM macros. The controls and data flow for any single macro within a protected group are made available to the spare or spares for that group. This allows a defective or failed SRAM macro to be shut off and replaced by a spare macro, dramatically increasing manufacturing yield and decreasing field replacement rates. The larger the protected group, the fewer the number of spares required for similar improvements in yield, but also the more difficult the task of making all the controls and dataflow available to the spare(s). In the case of the Level 2 Cache chip for the planned IBM Z6 computer, there are 4 protected groups with 192 SRAM macros per group. Each protected group is supplanted with an additional 2 spare SRAM macros, along with sparing controls and dataflow that allow either spare to replace any of the 192 protected SRAM macros.

Abstract: A technique to detect defects when reading a defect scan pattern stored on a disk in which the detected defects are processed differently depending on which region of a sector the defect is resident. In one implementation, a mask is used to identify the defects of different regions. By differentiating different regions within the sector for defect scan, sync mark and preamble fields may be treated as critical regions so that different defect scan properties may be attributed when performing the defect scan.

Abstract: A frame buffer for a microdisplay may be implemented with a repair algorithm that achieves desired uniformity in the frame buffer. Because the frame buffer and the display are tightly coupled, it is desirable to avoid providing unnecessary redundant elements which break up the uniformity of the overall integrated circuit. To this end, when a cell in the frame buffer is defective, a system to automatically address in its place an adjacent cell may be implemented. In one embodiment, control logic may address a column multiplexer to select an adjacent cell in an adjacent column in the same row to provide information in place of the defective cell in the frame buffer.

Abstract: A computer system including: a memory configured to store various kinds of data; a use setting data memory means for storing use setting data indicating a use of each of a plurality of memory blocks into which the memory is divided by a certain length; a memory diagnosis means for diagnosing the memory so as to detect a bad area in each of the memory blocks; and a memory use setting means for setting the use setting data of each of the memory blocks stored in the use setting data memory means in accordance with a result of detecting the bad area in each of the memory blocks by means of the memory diagnosis means.

Abstract: The present invention is generally related to integrated circuit devices, and more particularly, to methods and systems of a multi-chip package (MCP) containing a self-diagnostic scheme for detecting errors in the MCP. The MCP generally comprises a controller, at least one volatile memory chip having error detection logic, at least one non-volatile memory chip, and at least one fail signature register for storing fail signature data related to memory errors detected in the MCP. The controller can poll the fail signature register for fail signature data related to memory errors stored therein. Upon detection of fail signature data, the controller can store the fail signature data on a fail signature register located on a non-volatile memory.

Abstract: A system and method are herein disclosed for managing memory defects in an information handling system. More particularly, a system and method are described for generating a usable memory map which excludes memory locations containing defect memory elements. In an information handling system, a memory defect map, which contains information about the location of defective memory elements, is coupled to the memory device. As a map of memory usable by the system is created, usable memory regions containing defective memory elements are excluded from the memory map. The memory map is passed to the operating system, which uses only those regions of memory designated as usable and non-defective.

Abstract: A system and method for defect analysis are disclosed wherein a defect data set is input into the system. A radius value is selected by a user, which is the maximum number of bits that bit failures can be separated from one another to be considered a bit cluster. When a defect data set is received, the system and method start with a fail bit and search for neighboring fail bits. The specified radius is used to qualify the found fail bits to be part of the bit cluster or not. If a minimum count of fail bits is not met, the system and method will stop searching and move to the next fail bit. If a minimum count of fail bits is met, the search continues for the next fail bit until the maximum fail bit count specified by the user is reached. Aggregation is provided such that once bit clusters have been classified, the number of clusters that have the exact match or partial match to each other is counted. The user may set the partial match as a threshold count to establish a match.

Abstract: A redundant cross point switching is achieved by mapping a redundant column/row of point cells and enabling at least one of the switching devices which is associated with each column/row to define an alternate path around the defective point cell which replicates the function of the switching location of the defective point cell.

Abstract: A semiconductor integrated circuit includes a memory, a BIST main circuit and a BIST sub circuit. The BIST sub circuit is to generate a row address pattern or a column address pattern of the memory and includes a boundary address generation circuit for alternately generating a top address and a bottom address of the memory for at least one of the row address pattern and the column address pattern. The BIST main circuit is provided in common with a plurality of memories and the BIST sub circuit is individually provided corresponding to the memories. The boundary address generation circuit includes a top address memory unit for storing the top address and a top/bottom address generation unit for reading out the top address and alternately outputting the top address and the bottom address.

Abstract: A method of continuous testing of repetitive functional blocks provided on an integrated circuit (IC) which includes selecting one of the repetitive functional blocks at a time for testing, substituting a test repetitive functional block for a selected repetitive functional block, and testing the selected repetitive functional block during normal functional mode of the IC. An IC which includes repetitive functional blocks for performing corresponding functional block operations during normal functional mode of the IC, and a test system which performs continuous testing of each repetitive functional block while the functional block operations are performed during normal functional mode of the IC. One block may be tested during normal operation for each IC reset event without transferring or copying state information. Multiple blocks may be tested one at a time during normal operation by transferring state information between a selected block and a test block.

Abstract: A method of generating a code that minimizes error propagation by selecting integers m, n, mrl, and a range of fractions od, where m represents the number of bits in an unencoded sequence, where n represents the number of bits in an encoded sequence, where mrl represents the maximum run length of an encoded sequence, and where od represents a range of ones densities of an encoded sequence. Next, generating an encoding map M that maps each unencoded sequence to an n-bit encoded sequence that satisfies od and mrl. Next, generating a decoding map N that maps each n-bit sequence to an m-bit sequence. Next, determining an error-propagation score for M and N. Then, returning to the step of generating M if a user requires a lower error-propagation score.

Abstract: A test circuit for testing a command signal at a package level in a semiconductor device includes: a logic level determining unit for determining logic levels of a plurality of command flag signals in response to a plurality of internal command signals in a test mode; a storage unit for storing the plurality of command flag signals in response to a store control signal and outputting the plurality of command flag signals in series in response to an output control signal; and an output unit for driving an output signal of the storage unit to a data pad.

Abstract: A memory device has an error documentation memory array that is separate from the primary memory array. The error documentation memory array stores data relating to over-programmed bits in the primary array. When the over-programmed bits in the primary array are erased, the error documentation memory array is erased as well, deleting the documentation data relating to the over-programmed bits.

Abstract: Various embodiments comprise apparatus, methods, and systems that include an apparatus comprising a memory device configurable as a plurality of erase block groups including a base erase block group, wherein each of the plurality of erase block groups comprises a plurality of erase blocks each identified by a matching unique plurality of erase block numbers unique within the plurality of erase blocks and matching across the plurality of erase block groups; and a mapping table coupled to the plurality of erase block groups to store at least one group address number corresponding to one of the matching unique plurality of erase block numbers identifying a non-defective erase block in the base erase block group, and corresponding to several of the matching unique plurality of erase block numbers identifying a single non-defective erase block in each of the plurality of erase block groups other than the base erase block group.

Abstract: Provided is a test apparatus provided in common for a plurality of memories under test, comprising an address generating section that sequentially generates addresses to be tested in the memories under test and a plurality of buffer memories that are provided to correspond respectively to the plurality of memories under test and that each store addresses to be independently supplied to the corresponding memory under test. The test apparatus (i) compares block data output by the corresponding memory under test in response to the read command to an expected value of this block data, for each generated address, (ii) sequentially stores, in the buffer memory provided corresponding to each memory under test and in response to detection of a discrepancy in the comparison, the address generated for reading the block data, and (iii) writes, in parallel to the plurality of memories under test, a disable data that includes, as individual addresses, the addresses stored in the buffer memory.

Abstract: A test apparatus includes a pattern memory for storing a test pattern to be inputted to a memory-under-test, an address generating section for sequentially outputting addresses of the memory-under-test into which the test pattern is to be written, a pointer section for sequentially pointing each address of the pattern memory to cause the pattern memory to output the test pattern in synchronism with the address of the memory-under-test outputted out of the address generating section, a bad block memory for storing an address of a bad block of the memory-under-test in advance and a pointer control section for causing the address generating section to output a next address of the memory-under-test while holding the address of the pattern memory outputted out of the pointer section when the address of the memory-under-test generated by the address generating section coincides with any one of addresses stored in the bad block memory.

Abstract: Method and system for repairing memory failure in a computer system in one aspect determines one or more test patterns and time duration for testing the new memory unit that replaced a failed memory unit. The test pattern is written to the new memory unit and read from the new memory unit. The read pattern is compared to the test pattern that was used to write. If the read test pattern and the written test pattern doe not match, a further repair action is taken. If they match, writing and reading of the test pattern repeats until the time duration for testing expires. The new memory unit may be configured as available for use when the write and read test completes successfully for the testing time duration.

Abstract: A method and system for enterprise memory management of memory modules of a computer system. The method includes scanning memory chips of a memory module for errors, analyzing a scrub error map corresponding to a scrubbing operation of the memory module, generating a scrub map summary based upon the scrub error map analyzed, creating an error history map by adding the scrub map summary generated, analyzing the error history map created and tracking a chip location for each memory chip of the memory module including errors, and determining a scrubbing algorithm of the memory module based on the analyzed error history map. The enterprise memory management system includes a plurality of computers each including memory modules, and an enterprise memory manager which collects and analyzes error history maps corresponding to each computer and determines a scrubbing algorithm of the memory modules of each computer.

Abstract: A semiconductor integrated circuit has a cell array, a redundancy cell capable of replacing a defective cell, a redundancy control circuit, a plurality of first fuses, a plurality of second fuses, a plurality of third fuses, a first shift register configured to hold states of the plurality of first fuses, a second shift register configured to be connected in cascade to the first shift register and to hold states of the plurality of second fuses, a third shift register configured to be connected to the first and second shift registers in cascade and to hold states of the plurality of third fuses, a CRC remainder calculator configured to sequentially input information held by the first to third shift registers to a CRC generating equation to calculate a remainder obtained by division, and a CRC determination part that outputs information indicative of whether the first to third fuses are correctly programmed.

Abstract: Methods and structures for performing field flawscan to reduce manufacturing costs of a dynamic mapped storage device. In a dynamic mapped storage device in which all user supplied logical blocks are dynamically mapped by the storage device controller to physical disk blocks, features and aspects hereof permit flawscan testing of a storage device to be completed substantially concurrently with processing write requests for its intended application. A fraction of the storage device may be certified by an initial flawscan performed during manufacturing testing. Statistical sampling sufficient to assure a high probability of achieving specified capacity may be performed to reduce manufacturing time and costs in testing. Final flawscan of the remainder of the storage locations may be performed substantially concurrently with processing of write requests after the device is installed for its intended application.

Abstract: During manufacture and testing of a memory device, a memory test is performed to determine which, if any, memory blocks are defective. A memory map of the defective blocks is stored in one of the defect-free memory blocks so that it can be read later by a controller during normal operation of the memory device. In one embodiment, the memory test is for a programmability test to determine if the memory block can be programmed. An indication of programmability is stored in each block in a predetermined location.

Abstract: If a memory block in a flash memory device is found to have a defect, a memory block quality indication is generated in response to the type of memory defect. This indication is stored in the memory device. In one embodiment, the quality indication is stored in a predetermined location of the defective memory block. Using the quality indication, it can be determined if a system's error correction code scheme is capable of correcting data errors resulting from the defect.

Abstract: A system and method of providing error detection and correction capability in an IC using redundant logic cells and an embedded field programmable gate array (FPGA). The system and method provide error correction (EC) to enable a defective logic function implemented within an IC chip design to be replaced, wherein at least one embedded FPGA is provided in the IC chip to perform a logic function. If a defective logic function is identified in the IC design, the embedded FPGA is programmed to correctly perform the defective logic function. All inputs in an input cone of logic of the defective logic function are identified and are directed into the embedded FPGA, such that the embedded FPGA performs the logic function of the defective logic function.

Abstract: Disclosed is a build-in self-diagnosis and repair method and apparatus in a memory with syndrome identification. It applies a fail-pattern identification and a syndrome-format structure to identify at least one type of faulty syndrome in the memory during a memory testing, then generates and exports fault syndrome information associated with the corresponding faulty syndrome. According to the fault syndrome information, the method applies a redundancy analysis algorithm, allocates spare memory elements and repairs the faulty cells in the memory. The syndrome-format structure respectively applies single-faulty-word-syndrome format, faulty-row-segment-syndrome format, and faulty-column-segment-syndrome format for different faulty syndromes, such as faulty row segments and single faulty words, faulty column segments and single faulty words, all of single faulty words, faulty row segments and faulty column segments, and so on.

Abstract: A memory device to perform an erase operation algorithm that specifically deals with different types of defects in a memory array. The memory array of one embodiment of the present invention has primary and redundant elements. A register is used for each redundant element to store the address of a defective primary element and an error code that indicates the type of defect in the defective primary element. Control circuitry is used to control memory operations to the memory array. The control circuitry performs an erase operation algorithm that is specific to an error code when a defective primary element is addressed during an erase operation.

Abstract: Devices, systems, methods, and other embodiments associated with monitoring memory are described. In one embodiment, a method determines a first data quality associated with a set of data stored in flash memory. Based, at least in part, on the first data quality, the flash memory is controlled to correct the set of data to produce a corrected set of data. The corrected set of data is reprogrammed into the flash memory.

Abstract: An apparatus and methods are disclosed herein for identifying and avoiding attempts to access a defective portion of memory. Errors associated with portions of memory, such as a cache memory, are tracked over time enabling detection of both hard and erratic errors. Based on the number of errors tracked over time for a portion of memory, it is determined if the portion of memory is defective. In response to determining portion of memory is defective, the portion of memory is disabled. The portion of memory may be flushed and moved before being disable. Additionally, disabling the portion of memory may be conditioned upon determining if it is allowable to disable the portion of memory.

Abstract: A computer implemented method, a data processing system, and a computer usable program code for automatically identifying multiple combinations of operational and non-operational components with a single part number. A non-volatile storage is provided on a part, wherein the part includes a plurality of sub-components. Unavailable sub-components in the plurality of sub-components are identified based on a series of testing to form identified unavailable sub-components. Information of the identified unavailable sub-components is stored into the non-volatile storage.

Abstract: An apparatus, system, and method are disclosed for detecting and replacing failed data storage. A read module reads data from an array of memory devices. The array includes two or more memory devices and one or more extra memory devices storing parity information from the memory devices. An ECC module determines, using an error correcting code (“ECC”), if one or more errors exist in tested data and if the errors are correctable using the ECC. The tested data includes data read by the read module. An isolation module selects a memory device in response to the ECC module determining that errors exists in the data read by the read module and that the errors are uncorrectable using the ECC. The isolation module also replaces data read from the selected memory device with replacement data and available data wherein the tested data includes the available data combined with the replacement data.

Abstract: An information handling system is disclosed and can include a processor and a memory coupled to the processor. Further, the system can include a system reserved area that is accessible to the processor. The system reserved area can include a physical memory fault table having a plurality of bits and each bit in the physical memory fault table can represent an equal block of the memory.

Abstract: A device reduces false positive memory error detections by using a masking unit and sensitivity mask data to exclude unused portions of the memory from the error detection computations. A device includes an error detection unit to read data from the memory and verify data integrity. The sensitivity mask data indicates unused portions of the memory. Unused portions of the memory may correspond with configuration data for unused portions of a programmable device. Each bit of the sensitivity mask data may indicate the usage of one or more bits of the data from the memory. In response to the mask data, the masking unit sets data from the unused portions of the memory to values that do not change the result of the error detection computations. This prevents any errors in data from the unused portions of the memory from raising an error signal.

Abstract: The apparatus for analyzing a delay defect of the present invention obtains the RC of the maximal incidence among region codes (RCs) to which check circuits detecting errors caused with gradual increase in the frequency of an operational clock pulse fed to an integrated circuit belongs. The apparatus obtains information on latch in which an error is caused with the RC of the maximal incidence, with reference to a mapping table that describes the mapping relationship between an RC and a latch. The apparatus extracts a circuit portion in which an error can be captured with the region code of the maximal incidence by exhaustively tracing back circuit portions connected with each obtained latch, from the latch to the latch described in the mapping table. The apparatus gives delay defects to the input and the output pin of each of logic elements included in the extracted circuit portion, generates test patterns for detecting the given delay defects, and performs delay tests.