Abstract: An image output system includes input section for inputting an image or data, instruction acceptance section for accepting an instruction of outputting the input image or an image generated from the input data, image output section for outputting the instructed image, and log-recording section for recording an image log, including at least the image to be output and the result information of an output process for the image to be output, irrespective of whether or not the output of the instructed image has been completed successfully.

Abstract: The last value of an element of a computing system is continually stored within a first register. The element is cleared during any restart or reset of the computing system. The last value is relevant to debugging of the computing system when the computing system fails to perform as expected and/or as desired. Upon receiving an instruction to reset the computing system via a first reset signal corresponding to pressing of a reset button or a second reset signal corresponding to a baseboard management controller issuing a reset command, the last value of the element as stored within the first register is copied to a second register. The computing system is then reset. The last value of the element as stored within the second register persists within the second register during this type of reset, but is cleared during any other reset or restart of the computing system.

Abstract: An on-chip failure analysis circuit for analyzing a memory has a memory in which data is stored, a built-in self test unit which tests the memory, a failure detection unit which detects a failure of the output of the memory, a fail data storage unit in which fail data is stored, the fail data including a location of the failure, a failure analysis unit which performs failure analysis using the number of failures detected by the failure detection unit and the location of the failure, the failure analysis unit writing fail data including the analysis result in the fail data storage unit, and an analysis result output unit which outputs the analysis result of the failure analysis unit.

Abstract: Methods and apparatus are provided for approximating a probability density function or distribution for a received value in communication or storage systems. A target distribution is approximated for a received value in one or more of a communication system and a memory device, by substantially minimizing a squared error between the target distribution of the received values and a second distribution obtained by mapping a predefined distribution, such as a Gaussian distribution, through a mapping function, wherein the second distribution has an associated set of parameters. The mapping function can be, for example, a piecewise linear function. The second distribution has a plurality of segments and each of the segments has an associated set of parameters. The associated set of parameters can be used to compute probability values, soft data values or log likelihood ratios.

Abstract: Various techniques for testing multicore processors in an integrated circuit. Each core includes a plurality of registers configured to form at least two scan chains. In one embodiment, a verification unit located in the integrated circuit is electrically coupled to outputs of the scan chains. The verification unit is configured to determine the validity of the outputs of the scan chains and to indicate a malfunction of the integrated circuit if the outputs are determined not to be valid.

Abstract: Systems and methods are disclosed for performing run-time tests on a non-volatile memory (“NVM”), such as flash memory. The run-time tests may be tests that are performed on the NVM while the NVM can be operated by an end user (as opposed to during a manufacturing phase). In some embodiments, a controller for the NVM may detect an error event that may be indicative of a systemic failure of a die of the NVM. The controller may then select one or more blocks in the die to test, which may be dies that are currently not being used to store user data. The controller may post process the results of the test to determine whether there is a systemic failure, such as a column failure, and may treat the systemic failure if there is one.

Abstract: Systems and methods are disclosed for managing a non-volatile memory (“NVM”), such as a flash memory. The NVM may be managed based on results of a test performed on the NVM. The test may indicate, for example, physical memory locations that may be susceptible to errors, such as certain pages in the blocks of the NVM. Tests on multiple NVMs of the same type may be compiled to create a profile of error tendencies for that type of NVM. In some embodiments, data may be stored in the NVM based on individual test results for the NVM or based on a profile of the NVM type. For example, memory locations susceptible to error may be retired or data stored in those memory locations may be protected by a stronger error correcting code.

Abstract: A test apparatus provided in common for a plurality of memories under test, comprising an address generating section that sequentially generates addresses to be tested in the memories under test and a plurality of buffer memories that are provided to correspond respectively to the memories under test and that each store addresses to be independently supplied to the corresponding memory under test. The test apparatus (i) compares block data output by a memory under test in response to a read command to an expected value of this block data, for each generated address, (ii) sequentially stores, in the corresponding buffer memory and in response to detection of a discrepancy in the comparison, the address generated for reading the block data, and (iii) writes, in parallel to the plurality of memories under test, disable data that includes, as individual addresses, the addresses stored in the buffer memory.

Abstract: A transaction processing system comprising a transaction log, a log management policy, a profile and a log manager, and method for managing the transaction log are provided. The method comprises maintaining a transaction log of recoverable changes made by transaction processing tasks; storing a log management policy including at least one log threshold and a plurality of possible actions associated therewith; and generating a historical profile comprising a set of acceptable values for characteristics of the log resource usage of tasks. Such log resource usage characteristics may include time taken for a task to complete, CPU resource consumed, number of log records made, etc. From a comparison of the profile behaviour to the actual behaviour of a task which has been identified as holding up trimming of the log, the likelihood that the identified task has entered an invalid loop and represents a ‘bad’ transaction instance, rather than simply just taking a long time to complete, can be inferred.

Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.

Abstract: Each of a plurality of nonmatching detection circuits is provided for each bit, compares bit output of memory with an expected value corresponding to the bit output, and outputs a nonmatching detection signal when the bit output does not match the value. A selection circuit selects and outputs the output of one or more nonmatching detection circuits in the plurality of nonmatching detection circuits. When the selection circuit outputs at least one nonmatching detection signal, a nonmatching result holding circuit holds the value of the nonmatching detection signal.

Abstract: Detecting brown-out in a system having a non-volatile memory (NVM) includes loading data in the NVM, wherein a next step in loading is performed on a location in the NVM that is logically sequential to an immediately preceding loading. A pair of adjacent locations include one with possible data and another that is empty. Determining which of the two, if at all, have experienced brownout includes using two different sense references. One has a higher standard for detecting a logic high and the other higher standard for detecting a logic low. Results from using the two different references are compared. If the results are the same for both references, then there is no brownout. If the results are different for either there has been a brownout. The location with the different results is set to an invalid state as the location that has experienced the brownout.

Abstract: A semiconductor integrated circuit includes a clock generator for generating a second clock signal having a frequency that varies over time by using a first clock signal having a fixed frequency, a test circuit for generating a digital signal according to a difference between a first frequency corresponding to the first clock signal and a second frequency corresponding to the second clock signal by a digital logic operation based on the first clock signal and the second clock signal, and a signal path for outputting the digital signal generated by the test circuit.

Abstract: A receive test accelerator retrieves an adjusted jitter amount and an adjusted test time in which to test a device. The adjusted jitter amount and the adjusted test time correspond to an adjusted bit error rate that is extrapolated from a baseline bit error rate, which corresponds to a baseline jitter amount. In turn, the receive test accelerator tests the device, at the adjusted test time, using a data stream that is modulated by the adjusted jitter amount.

Abstract: A semiconductor device includes a first management area storing a plurality of inspection results, the plurality of inspection results being obtained by executing inspections for each of a plurality of storage areas which store a plurality of data; and a second management area storing the plurality of inspection results. The first and second management areas are independent from each other.

Abstract: A technique for identifying bad pages of storage elements in a memory device. A flag byte is provided for each page group of one or more pages which indicates whether the page group is healthy. Flag bytes of selected page groups also indicate whether larger sets of page groups are healthy, according to bit positions in the flag bytes. A bad page identification process includes reading the flag bytes with a selected granularity so that not all flag bytes are read. Optionally, a drill down process reads flag bytes for smaller sets of page groups when a larger set of page groups is identified as having at least one bad page. This allows the bad page groups to be identified and marked with greater specificity. Redundant copies of flag bytes may be stored in different locations of the memory device. A majority vote process assigns a value to each bit.

Abstract: A system and method for logging and storing failure analysis information on disk drive so that the information is readily and reliably available to vendor customer service and other interested parties is provided. The information, in an illustrative embodiment, is stored on a nonvolatile (flash) random access memory (RAM), found generally in most types of disk drives for storage of updateable disk drive firmware. A known location of limited size is defined in the flash RAM, to form a scratchpad. This scratchpad is a blank area of known addresses, formed during the original firmware download onto the memory, and which is itself free of firmware code. This scratchpad is sufficient in size to write a series of failure codes in a non-erasable list as failures/errors (and user/administrator attempts to unfail the disk) are logged.

Abstract: A method for testing a reliability of a solid-state storage medium is provided, wherein the solid-state storage medium has a plurality of blocks. First, a lifetime of each of the blocks of the solid-state storage medium is obtained. Then, an erase count of each of the blocks is obtained, and whether the erase count is greater than a predetermined erase count is determined. After that, those blocks having their erase counts greater than the predetermined erase count are accumulated to generate a problematic block number, and a test report is output.

Abstract: Disclosed is a reconfigurable device including at least a bus that mutually connects functional blocks, a configuration information memory disposed corresponding to each of the functional blocks, an error detection circuit that detects an error in the configuration information memory, and a buffer which is on-off controlled based on information stored in the configuration information memory and each of which controls connection between each of the functional blocks and each bus. When an error in the configuration information memory is detected by the error detection circuit, the buffer with an output thereof connected to the bus is set to an off-state, based on a result of error detection.

Abstract: A testing apparatus for analyzing a memory module under test operating within an application system, wherein the memory module under test is coupled to a processor of the application system, is disclosed herein. In at least one embodiment, the testing apparatus comprises a first interface for coupling to the application system, a second interface for coupling to a reference memory module, a controller coupled to the first and second interfaces, at least one comparator, and a data logging unit. The data logging unit is configured to receive logging data from the controller and at least one test result from the at least one comparator, and to record, in a memory, at least a subset of the logging data, such that more specific details of memory errors revealed during behavioral testing of memory modules may be identified, examined, and stored for subsequent analysis.

Abstract: A test apparatus compares bits included in a data sequence read from a DUT with expectation values. Comparison results are stored in a first failure memory (FM) as bit information indicating whether storage cells of the DUT are non-defective. The storage device counts the number of bits not matching the expectation values for each page, and judges for each grade/page of the DUT whether the number of bits not matching the expectation values meets the condition of that grade. Judgment results are stored in a second FM as page information indicating whether each page is non-defective for each grade. If page information of a page including a bit corresponding to a storage cell indicating that this page meets the condition of any grade is stored in the second FM, the apparatus outputs the bit information in the first FM, by changing it to a value indicating that storage cell is as non-defective.

Abstract: A memory test device, including a universal register to conduct an operation by a predetermined universal command language; an extension register having a larger capacity than the universal register and to conduct an operation by a predetermined extension command language; and a controller to write a predetermined test pattern in an external memory using the extension command language, to read the test pattern written in the memory, to determine the identity of the written test pattern and the read test pattern, and to determine a presence of an error in the memory using the universal command language.

Abstract: A memory hub device with test logic is configured to communicate with memory devices via multiple hub device ports, and is also configured to communicate on one or more busses in an upstream and downstream direction. The test logic includes a built-in self test apparatus providing logic to simultaneously and independently test the memory devices interfaced to one or more of the hub device ports using read and write data patterns. The test logic also includes configuration registers to hold fault and diagnostic information, and to initiate one or more tests. The memory hub device can further include command collision detection logic, a trace array, buffer transmit mode logic, trigger logic, clock adjustment logic, transparent mode logic, and a configured command sequencer, as well as additional features.

Abstract: A method and apparatus for multi-site testing of computer memory devices. An embodiment of a method of testing computer memory devices includes coupling multiple memory devices, each memory device having a serializer output and a deserializer input, wherein the serializer output of a first memory device is coupled with a deserializer input of one or more of the memory devices of the plurality of memory devices. The method further includes producing test signal patterns using a test generator of each memory device, serializing the test signal pattern at each memory device, and transmitting the serialized test pattern for testing of the memory devices, wherein testing of the memory devices includes a first test mode and a second test mode.

Abstract: Described embodiments provide for end-of-life (EOL) checking for NAND flash devices. An exemplary implementation of a computing environment comprises at least one NAND data storage device operative to store one or more data elements. In the illustrative implementation, the EOL data processing and storage management paradigm allows for the storage of data according using a selected EOL enforcement algorithm that can utilize current and/or historical correction levels. The NAND data storage EOL checking module can be operable to cooperate with one or more NAND data store components to execute one or more selected EOL operations to protect stored data.

Abstract: Provided are a semiconductor memory device, memory system and method of executing a bootloading operation. The method includes cyclically executing a bootloading operation cycle that includes loading the boot information from the memory to the controller, and performing an ECC operation on the boot information. The ECC operation provides a fail condition indication or a pass condition indication and if the fail condition indication is provided, the next bootloading operation cycle is executed.

Abstract: A method for detecting disturb phenomena between neighboring blocks in non-volatile memory includes, sequentially erasing and writing test data (pattern) to each block of a plurality of blocks under test in the non-volatile memory at a first time point, dividing the plurality of blocks under test into a first block group and a second block group based on ordinal number included in each block of the plurality of blocks under test, reading data from each block of the first block group at a second time point, and comparing the data with the test data written at the first time point to generate a first detecting result, and determining applicability of each block of the first block group based on the first detecting result.

Abstract: A method of an apparatus for diagnosing a memory including a storing module for storing diagnosis information relating to memory errors in a memory to be diagnosed, the apparatus capable of detecting memory errors, the method includes: testing the memory and detecting a memory error for each of a plurality of areas of the memory; dividing at least one of the areas into a plurality of sub-areas upon detection of a memory error in the at least one of the areas; testing the sub-areas and detecting a memory error for each of the plurality of the sub-areas; counting the number of sub-areas where a memory error is detected; and storing information of the number of the sub-areas where a memory error is detected together with information of the at least one of the areas containing the sub-areas into the storing module.

Abstract: According to one embodiment, electrical test results of a semiconductor memory arrayed in a logical address order are stored in a first memory secured in a main memory, a plurality of second memory areas in each of which loading and storing of each data in a unit size is performed is secured in the main memory, FBMs in which pass/fail information is arrayed in a physical address order are generated based on different parts of the electrical test results stored in the first memory area, respectively, the FBMs generated from the different parts of the electrical test results are stored in the second memory areas, respectively, and the FBMs stored in the second memory areas, respectively, are output.

Abstract: Column redundancy data is selectively retrieved in a memory device according to a set of storage elements which is currently being accessed, such as in a read or write operation. The memory device is organized into sets of storage elements such as logical blocks, where column redundancy data is loaded from a non-volatile storage location to a volatile storage location for one or more particular blocks which are being accessed. The volatile storage location need only be large enough to store the current data entries. The size of the set of storage elements for which column redundancy data is concurrently loaded can be configured based on an expected maximum number of defects and a desired repair probability. During a manufacturing lifecycle, the size of the set can be increased as the number of defects is reduced due to improvements in manufacturing processes and materials.

Abstract: A recording medium structure capable of displaying a defect rate is provided. The recording medium has at least one use area with endurance blocks, and each endurance block has an endurance value. The recording medium structure has a housing, a first and a second off-line display units arranged on the housing for respectively displaying a real defect rate and a potential defect rate of the recording medium. The real defect rate is calculated based on an error correction coed, and the potential defect rate is calculated based on an endurance values recorded in the endurance table.

Abstract: It is an object to provide a semiconductor storage apparatus managing system for implementing a semiconductor storage apparatus which can be actually utilized in place of a hard disk apparatus. A semiconductor storage apparatus managing system SY for managing an apparatus lifetime of a semiconductor storage apparatus 10 having a semiconductor memory area 15 for storing data and a defective block substituting area 16 for substituting a defective block in the semiconductor memory area 15,includes a storage apparatus side controller 12 for detecting the number of consumed blocks in the defective block substituting area 16 and a host side controller 31 for predicting the apparatus lifetime of the semiconductor storage apparatus 10 based on a result of the detection and giving a notice of a result of the prediction.

Abstract: A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.

Abstract: The present invention provides a method and system for improving memory testing efficiency, raising the speed of memory testing, detecting memory failures occurring at the memory operating frequency, and reducing data reported for redundancy repair analysis. The memory testing system includes a first memory tester extracting failed memory location information from the memory at a higher memory operating frequency, an external memory tester receiving failed memory location information at a lower memory tester frequency, and an interface between the first memory tester and the external memory tester. The memory testing method uses data strobes at the memory tester frequency to clock out failed memory location information obtained at the higher memory operating frequency. In addition, the inventive method reports only enough information to the external memory tester for it to determine row, column and single bit failures repairable with the available redundant resources.

Abstract: A method for flash sparing on a solid state drive (SSD) includes detecting a failure from a primary memory device; determining if a failure threshold for the primary memory device has been reached; and, in the event the failure threshold for the primary memory device has been reached: quiescing the SSD; and updating an entry in a sparing map table to replace the primary memory device with a spare memory device.

Abstract: A system and method for defect analysis of multi-level memory cell devices and embedded multi-level memory in system-on-chip integrated circuits are disclosed wherein a defect data set is input into the system. When a defect data set is received, an automated test engineering system running a memory test program analyzes the defect data set to generate one or more fail bit locations and one or more fail states of the memory. The multi-level memory defect analysis system and method then classify failed bits or patterns comprising a vertical fail pattern, whereby after being classified, each memory cell failure vertical fail pattern has three data attributes comprising fail type, a number of fail bits/states, and a sequence of the fail states. The vertical fail pattern may comprise a single fail state or multi-state fail. The multi-state fail may be a continuous-states fail, discontinuous-states fail, or all-state fail.

Abstract: A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.

Abstract: A self-repairing memory system includes memory including memory elements and redundant memory elements. The memory elements include a plurality of memory cells. A memory repair module identifies non-operational memory cells and selects at least one memory element including the non-operational memory cells. A first repair sub-circuit soft repairs the memory by substituting the selected memory elements with the redundant memory elements. A second repair sub-circuit hard repairs the memory based on the substitutions.

Abstract: A method for storing a memory defect map is disclosed whereby a memory component is tested for defects at the time of manufacture and any memory defects detected are stored in a memory defect map and used to optimize the system performance. The memory defect map is updated and the system's remapping resources optimized as new memory defects are detected during operation.

Abstract: Described herein are method and apparatus for storing data to a low-latency random read memory (LLRRM) device using non-aligned data striping, the LLRRM device being implemented on a storage system. The LLRRM device may comprise a bank comprising a plurality of memory chips, each chip being simultaneously accessible for storing data on a plurality of erase-units (EUs). A storage operating system may maintain, for each chip, a reserve data structure listing reserve EUs and a remapping data structure for tracking remappings between defective EUs to reserve EUs in the chip. A defective EU in a chip may be mapped to a reserve EU from the reserve data structure. Upon receiving a data block to be stored to the LLRRM device at the defective EU, the storage operating system may stripe the received data block across a plurality of chips in a non-aligned manner using the remapped reserve EU.

Abstract: Provided is a test apparatus having a bad block memory for storing a plurality of pieces of fail information in association with blocks of a memory under test, each piece of fail information indicating whether there is a defect in the associated block. The test apparatus writes a test data sequence to a page under test of the memory under test, reads the test data sequence written to the page under test, and compares the read data sequence to the written data sequence. The test apparatus includes an allocation register that stores allocation information for setting which of the plurality of fail conditions for judging whether there is a defect in the page under test are allocated to the plurality of pieces of fail information.

Abstract: A circuit and method of testing a memory and calculating a repair solution for a given address location includes pausing a built in self test (BIST) operation on detection of a failing memory output data of an integrated circuit. During the pause, the circuit and method analyzes “n” number of groups of the failing memory output data during “n” cycles using analysis logic and calculating a repair solution. Normal operations can be resumed.

Abstract: In a memory device, an on-die register is provided that is configured to store a row address as well as a column address of a memory cell that fails a test. Storing the row address frees testing from being limited to activating at one time only rows related to a common redundant segment. Storing the row address also guides repair using segmented redundancy. As an addition or alternative, information may be stored in an anti-fuse bank that is designed to provide access to a redundant cell but has not yet enabled access to that cell. If the information stored in the anti-fuse bank relates to the failure of the redundant cell, such information may be used to avoid repairing with that redundant cell.

Abstract: A computer system having a plurality of devices including a data storage part which includes a plurality of cells to store data, and a controller to inspect whether there is a defective cell in the data storage part if a condition to execute a cell inspection function is met, and sets the defective cell to be assigned to one of the devices if a defective cell is found.

Abstract: The invention relates to an integrated circuit comprising at least one microprocessor [12] linked to at least one non-volatile memory [14] that can be accessed by sectors. The integrated circuit comprises a detector [20] for discovering when a threshold number of bad sectors has been exceeded in said non-volatile memory [14].

Abstract: A method for performing a double pass nth fail bitmap of a memory array of a device under test includes a memory built-in test (MBIST) unit reading previously written data from each location of the memory array during a first pass, and detecting a failure associated with a mismatch between written and read data at each location. The method also includes storing within a storage, an address corresponding to a current failing location in response to determining that a predetermined number of locations have failed. The method further includes the MBIST unit reading the previously written data from each location during a second pass. The method includes locking and providing for output, read data stored at a current read address in response to a match between the current read address and any address stored within the storage.

Abstract: A method for implementing at speed bit fail mapping of an embedded memory system having ABIST (Array Built In Self Testing), comprises using a high speed multiplied clock which is a multiple of an external clock of an external tester to sequence ABIST bit fail testing of the embedded memory system. Collect store fail data during ABIST testing of the embedded memory system. Perform a predetermined number of ABIST runs before issuing a bypass order substituting the external clock for the high speed multiplied clock. Use the external clock of the tester to read bit fail data out to the external tester.

Abstract: A disk management method for managing a disk management device for writing and reading data to and from a disk drive in which a recording medium is managed in a first control unit. The disk management method includes an error checking operation for checking an error on the recording medium in the first control unit, an error correction operation for correcting the error detected in the error, an error correcting operation for correcting the error detected in the error checking operation after converting data including the error to the second control unit, a data loss registration operation for registering a region in which data are lost due to an inconsistency between the first control unit and second control unit in a data loss region table, and a data loss recovery operation for recovering the loss of data with reference to the data loss region table.

Abstract: A method for storing data in a memory, which includes a plurality of analog memory cells, includes defining programming levels that represent respective combinations of at least first and second bits and are represented by respective nominal storage values. The data is stored by mapping the data to storage values selected from among the nominal storage values and writing the storage values to the memory cells. A condition is defined over two or more bit-specific error rates applicable respectively to at least the first and second bits. The bit-specific error rates include a first bit-specific error rate computed over the data stored by the first bits and a second bit-specific error rate computed, separately from the first bit-specific error rate, over the data stored by the second bits. The nominal storage values are set based on the bit-specific error rates so as to meet the condition.

Abstract: A structure and method for repairing SDRAM by generating a Slicing Table of Fault Distribution and using the size of SDRAM page as the partition basic block. The Slicing Table of Fault Distribution is generated at each booting or memory-testing, and the elemental range of the number of detected defects is formed. When the number of detected defects exceeds the elemental range, the limits of another partition block with a lower rate of defects are used to cure the defect. The repair bit is also encoded according to the Slicing Table of Fault Distribution, pointing to the remapping bit so that the access operation occurs at the remapping bit. As such, the cost of producing, testing and repairing SDRAM is greatly reduced.