Abstract: A method of storing data includes receiving data including a first group of bits and a second group of bits and initiating a shaping encoding operation on the second group of bits to generate a third group of bits. The third group of bits has more bits than the second group of bits. The shaping encoding operation is configured to produce a non-uniform probability distribution of bit values in the third group of bits. The first group of bits and first error correction coding (ECC) parity bits corresponding to the first group of bits are stored to a first logical page that is within a physical page of a MLC memory and the third group of bits and second ECC parity bits corresponding to the third group of bits are stored to a second logical page that is within the physical page of the MLC memory.

Abstract: A system and method for providing a memory device having a shared error feedback pin. The system includes a memory device having a data interface configured to receive data bits and CRC bits, CRC receiving circuitry, CRC creation circuitry, a memory device pad, and driver circuitry. The CRC receiving circuitry utilizes a CRC equation for the detection of errors in one or more of the received data and the received CRC bits. The CRC creation circuitry utilizes the CRC equation for the creation of CRC bits consistent with data to be transmitted to a separate device bits. The memory device pad is configured for reporting of any errors detected in the received data and the received CRC bits. The driver circuitry is connected to the memory device pad and merged with one or more other driver circuitries resident on one or more other memory devices into an error reporting line.

Abstract: A method of screening manufacturing defects at a memory array may include programming a background pattern of physically inverse data along conductive lines extending in a first direction. The programming may include providing a program conductive line with a high value. The method may further include programming a memory cell at an intersection of the program conductive line and a conductive line extending in a second direction to a selected high value, and determining whether a cell initially at a low value and associated with a conductive line extending in the first direction and adjacent to the program conductive line is disturbed.

Abstract: Data capacity efficiency is improved by de-duplicating data assigned with a code that is different for each data. A storage apparatus comprising a flash memory control device equipped with one or more flash memory modules, wherein the flash memory module comprises at least one flash memory chip for providing a storage area, and a controller for controlling writing/reading of data including user data and a guarantee code accompanying the user data to and from the storage area provided by the flash memory chip, wherein the controller respectively divides a plurality of the data having the common user data into the user data and the guarantee code, stores one of the user data in an area of a predetermined unit of the storage area, and links and stores each of the guarantee codes accompanying the plurality of user data in an area of a predetermined unit of the storage area.

Abstract: A flash storage device comprises a plurality of channels of flash storage, a system memory, and a controller. The controller is configured to cache, in the system memory, data to be written, to partition the data into a plurality of data portions, to generate error correction information based on the plurality of data portions, to write the error correction information to a first one or more of the plurality of channels of flash storage, and to write each of the plurality of data portions to a different one of the plurality of channels of flash storage other than the first one or more thereof.

Abstract: A flash memory device using an error correction code (ECC) algorithm and a method of operating the same. The device includes a memory cell array including a error correction code (ECC) block including data memory cells configured to store data and a parity cell configured to store a first parity code, a parity controller configured to generate a second parity code based on a the current operating mode of the flash memory device, and an error correction unit configured to receive one of the first and second parity codes and to perform an ECC algorithm on the data stored in the data memory cells using the received parity code. A control logic restarts an erase operation on an erroneously unerased data memory cell or prevents the erase operation from being restarted based on the number of erroneous bits per ECC block.

Abstract: A system and method is disclosed for detecting errors in memory. A memory subsystem that includes a set of parallel memory channels is disclosed. Data is saved such that a duplicate copy of data is saved to the opposite memory channel according to a horizontal mirroring scheme or a vertical mirroring scheme. A cyclic redundancy code is generated on the basis of the data bits and address bits. The generated cyclic redundancy code and a copy of the cyclic redundancy code are saved to the memory channels according to a horizontal mirroring scheme or a vertical mirroring scheme.

Abstract: A region-based management method of a non-volatile memory is provided. In the region-based management method, the storage space of all chips in the non-volatile memory is divided into physical regions, physical block sets, and physical page sets, and a logical space is divided into virtual regions, virtual blocks, and virtual pages. In the non-volatile memory, each physical block set is the smallest unit of space allocation and garbage collection, and each physical page set is the smallest unit of data access. The region-based management method includes a three-level address translation architecture for converting logical block addresses into physical block addresses.

Abstract: A data storage medium may have data stored on one physical portion of the medium and error correction and recovery data stored on a second physical portion of the medium. In one embodiment, a write once, read many medium may be written with data and the remaining capacity of the medium may be filled with error correction and recovery data. If a portion of the main data is corrupted, the error correction and recovery data may be used to recreate the corrupted data. The error correction and recovery data may be created to fill the unused capacity of the medium by prioritizing and selectively backing up the data when the data use more than half of the medium's capacity, or may create one or more redundant copies of the data if the data consume less than half of the medium's capacity, for example.

Abstract: A semiconductor storage includes a receiver configured to receive a write request from a host device; a storage unit configured to hold redundancy data generation/non-generation information; a writing unit configured to write data in a semiconductor memory array and write redundancy data generation/non-generation information of the written data in the storage unit; a first data extracting unit configured to extract data whose redundancy data is not generated from among the data held by the semiconductor memory array; a first redundancy data generating unit configured to generate redundancy data; a first redundancy data writing unit configured to write the generated redundancy data in the semiconductor memory array; and a first redundancy data generation/non-generation information updating unit configured to update the redundancy data generation/non-generation information of the data whose redundancy data held by the storage unit is generated.

Abstract: A method includes reading data from a data area of a word line and reading first ECC data from an ECC area of the word line. The method also includes, in response to determining that an error indicator exceeds a threshold, storing second ECC data in the ECC area. The second ECC data corresponds to a subsection of the data area.

Abstract: A method for data storage includes defining a set of scrambling sequences, each sequence including bits in respective bit positions having bit values, such that a distribution of the bit values in any give bit position satisfies a predefined statistical criterion. Each data word is scrambled using a respective scrambling sequence selected from the set. The scrambled data words are stored in the memory device.

Abstract: A data storage device includes a multi-bit memory device including a memory cell array, the memory cell array including a first memory region and a second memory region, and a memory controller including a buffer memory and configured to control the multi-bit memory device. The memory controller is configured to control the multi-bit memory device to execute a buffer program operation in which data stored in the buffer memory is stored in the first memory region, and to control the multi-bit memory device to execute a main program operation in which the data stored in the first memory region is stored in the second memory region. The memory controller is further configured to generate parity data based upon the data stored to the first region, the parity data being copied from the first memory region to the second memory region via the main program operation.

Abstract: A management method for a non-volatile memory comprises the steps of providing the non-volatile memory with at least one block having a plurality of pages to store user data and parity data; dividing at least one of the pages into a plurality of partitions each including the user data and parity data; determining codeword length of each of the partitions, the codeword length comprising message length with sufficient storage to store the user data and parity length storing the parity data; and storing extra parity data in the partition with the codeword length. When storing extra parity data in the codeword length, the parity length is increased and the message length is decreased.

Abstract: Data bits stored in memory cells are recognized by an ECC generator as data bit strings in a first direction and data bit strings in a second direction such that each data bit string in the first direction and each data bit string in the second direction share one data bit in common. The ECC controller identifies a data bit string in the first direction having more than one data bit in error based on a respective correction code in the first direction and identifies a data bit string in the second direction having more than one data bit in error based on a respective correction code in the second direction, and causes the data bit shared by the identified data bit string in the first direction and the identified data bit string in the second direction to be changed.

Abstract: A data read-out circuit is provided with a sense amplifier circuit and a selector. The sense amplifier circuit senses a stored data stored in a memory cell array by using a plurality of reference levels to generate a plurality of read data, respectively. Thus, the sense amplifier circuit outputs the plurality of read data with regard to the stored data. The selector selects a data corresponding to any one of the plurality of read data based on a control signal and outputs the selected data as an output data.

Abstract: A method for adaptively applying an error-correcting code to a storage device is disclosed. A determination is made that a system is in an idle state of input/output requests. First data symbols are copied into a first location within a buffer. First data symbol errors corrected using a first error-correcting code. Second data symbols including corrected bits are written in a second location on the recording media with a second error-correcting code. An error number for the second data symbols in the second location is determined. If the error number is below a first threshold error number, the first data symbols are deleted. If the error number is above the first threshold error number, the second data symbols are deleted.

Abstract: Embodiments of an invention for verifying firmware using system memory error check logic are disclosed. In one embodiment, an apparatus includes an execution core, firmware, error check logic, non-volatile memory, comparison logic, and security logic. The error check logic is to generate, for each line of firmware, an error check value. The comparison logic is to compare stored error check values from the non-volatile memory with generated error check values from the error check logic. The security logic is to prevent the execution core from executing the firmware if the comparison logic detects a mismatch between the stored error code values and the generated error code values.

Abstract: A memory system includes a controller that manages data stored in the first and second storing areas. The controller determines, when a readout error occurs when the stored data in the second storing area is read out, success or failure of error correction to the read-out data based on the result of the error correction stored in a storage buffer, writes, when the error correction is successful, correction data corresponding to the read-out data stored in the storage buffer, and writes, when the error correction fails, the read-out data itself not subjected to error correction processing.

Abstract: To control operations of a resistive memory device, an input-output operation of an error check and correction (ECC) code is separated from an input-output operation of data. A condition of the input-output operation of the ECC code is determined stricter than a condition of the input-output operation of the data. reliability of the input-output operation of the ECC code may be enhanced, thereby reducing errors due to defect memory cells, noise, etc.

Abstract: A system including a plurality of data storage cells, where each of the plurality of data storage cells is configured to store a plurality of data bits, and a plurality of reserved cells configured to store status information of one or more of the plurality of data storage cells. Each of the plurality of reserved cells includes a multi-bit cell configured to store the status information at a lower density than each of the data storage cells.

Abstract: Storing data in memory using wear-focusing techniques for improved endurance. A method for storing the data includes receiving write data to be written into a memory that is logically divided into a plurality of regions. The plurality of regions includes a first region and a second region that are implemented by the same memory technology. The memory is subject to degradation as a result of write operations. The write data is classified as dynamic data or static data. The write data is encoded using a first type of encoding in response to the write data being classified as dynamic. The write data encoded using the first type of encoding is stored in the first region of the memory. The write data is encoded using a second type of encoding and stored in the second region of the memory in response to classifying the write data as static data.

Abstract: Some embodiments of the present invention provide a system that can be reconfigured to provide error detection and correction after a failure of a memory component in a memory system. During operation, the system accesses a block of data from the memory system, wherein each block of data in the memory system includes an array of bits logically organized into R rows and C columns, including two checkbit columns containing checkbits, and C?2 data-bit columns containing data bits, wherein each column is stored in a different memory component, and wherein the checkbits are generated from the data bits to provide block-level detection and correction for a failed memory component. Next, upon examining the block of data, the system determines that a specific memory component in the memory system has failed.

Abstract: A memory module includes a plurality of register files. Each register file is associated with a set of error-correcting code (ECC) bits and ECC check/correct logic that can provide error-correcting functionality, if required. When error-correcting functionality is not required, ECC bits are grouped together to form additional register files, thereby providing additional storage space.

Abstract: A processor may comprise a cache, which may be divided into a first and second section while the processor operates in a low-power mode. A cache line of the first section may be fragmented into segments. A first encoder may generate first data bits and check bits while encoding a first portion of a data stream and a second encoder may, separately, generate second data bits and check bits while encoding a second portion of the data stream. The first data bits may be stored in a first segment of the first section and the check bits in a first portion of the second section that is associated with the first segment. The first decoder may correct errors in multiple bit positions within the first data bits using the check bits stored in the first portion and the second decoder may, separately, decode the second data bits using the second set of check bits.

Abstract: An objective of the present invention is to make it possible to appropriately correct an error of data in a cache memory. A store processing unit generates an nt-ECC on the basis of data stored in a non-target area that was read out from a cache memory with a search of the cache memory, and generates t-ECC on the basis of the data to be stored in the buffer.

Abstract: A flash-memory system is organized into a plurality of blocks and a plurality of pages in each block, each page having 2N data locations and K spare locations. At least one page in the memory has 2M?1 user data sectors and each sector has 2N-M+L locations therein. Error-correction code (ECC) data related to the user data is calculated and stored in at least the 2M user data locations unused by the 2M?1 user data sectors. Because L is at least 1 but less than 2N-M (N>M), at least a portion of one user data sector is stored in the spare memory locations. Additional locations in each page are available to allow for the ECC data to have additional redundancy bits added per sector, thereby making the flash memory system more robust and reliable.

Abstract: A data storage device includes an interface that is configured to interface with a host, a command bus, multiple memory devices that are operably coupled to the command bus and a controller that is operably coupled to the interface and to the command bus. The controller is configured to receive a bad block scan command for a specified one of the memory devices from the host using the interface, scan the specified memory device for bad blocks, generate a map of the bad blocks and communicate the map to the host using the interface.

Abstract: Systems and methods are provided for performing multilevel coset coding and probabilistic error correction. Multiple bit data is encoded in a memory by combining one of the bit positions of multiple data values and encoding the combination to form a codeword. A data point containing a bit error is determined by decoding a codeword associated with one of the bit positions. A first coset corresponding to a data point with the error is determined where the coset includes labels representing non-adjacent analog signal levels. Labels in a second coset that includes mutually exclusive labels from the first coset are analyzed to select a label representing a signal level that is closest in proximity to the signal level represented by the data point containing the bit error than the other labels in the second coset. The data point error is corrected by replacing the data point with the selected label.

Abstract: A memory wherein the bit reliability of the memory cells can be dynamically varied depending on the application or the memory status, the operation stability is ensured, and thereby a low power consumption and a high reliability are realized. Either a mode (a 1-bit/1-cell mode) in which one bit is composed of one memory cell or a mode (a 1-bit/n-cell mode) in which one bit is composed of n (n is two or more) connected memory cells is dynamically selected. When the 1-bit/n-cell mode is selected, the read/write stability of one bit is enhanced, the cell current during read is increased (read is speeded up), and a bit error, if occurs, is self-corrected. Especially, a pair of CMOS transistors and a control line for performing control so as to permit the CMOS transistors to conduct are added between the data holding nodes of n adjacent memory cells. With this, the word line (WL) is controlled, and thereby the operation stability is further improved.

Abstract: A data access apparatus includes: a flash memory controller; a mirror means; and a flash memory including at least one data region and at least one mirror region. The mirror means copies data to form mirror data to the mirror region when the flash controller writes the data into the data region. The flash memory controller reads the mirror data to replace the data if the flash memory controller determines that the data include error(s) while the data are being read.

Abstract: A memory system includes: a first non-volatile memory used for storing data to be accessed in block units; a second non-volatile memory used for storing data to be accessed in word units in random accesses to the second non-volatile memory; and a control section configured to control operations of the first and second non-volatile memories, wherein error correction codes to be applied to data stored in the second non-volatile memory are held in the first non-volatile memory.

Abstract: An memory device including a data region storing a main data, a first index region storing a count data, and a second index region storing an inverted count data, where the data region, the first index region, and the second index region are included in one logical address.

Abstract: A serial processing method and a parallel processing method of bit rate matching and apparatuses thereof are disclosed in the present invention. The serial processing method includes: receiving a system bit data stream, a check 1 data stream and a check 2 data stream, performing interleaving processing on the system bit data in the received system bit data stream, and caching in a first buffer cache of a storage; simultaneously performing interleaving processing on the corresponding data in the received check 1 data stream and the received check 2 data stream, and caching the data on which the performing interleaving processing is performed in a second buffer of the storage; and reading valid data from the storage and implementing the rate matching.

Abstract: Error correcting systems, methods, and devices for non-volatile memory are disclosed. In one embodiment, a non-volatile memory device comprises a data area for storing data, an error correcting code generation section for generating an error correcting code in response to receipt of a code generation command, and an error correcting code area for storing the error correcting code. The non-volatile memory device further comprises a detector circuit for detecting the generating of the error correcting code, and a read section for correcting the data stored in the data area based on the error correcting code upon the detecting of the generation of the error correcting code by the detector circuit, where the code generation command is forwarded by a memory controller when the data are is filled with the data beyond a threshold level.

Abstract: A data processing system includes a register file having a plurality of registers storing respective register data values and an associated register value cache having a plurality of storage locations storing corresponding cache data values. There are fewer cache data values than registers. When a register is to be read, both the register data value and, if present, a cache data value from a corresponding storage location within the register value cache are read and compared by a comparator. This generates a match signal which indicates if the data values do not match that one of the data values is in error. The match signal stalls the processing and a CRC code initially stored with the cache data value and recalculated based upon the read cache data value are compared to determine whether or not the cache data value has changed since it was stored. If the cache data value has not changed, then it is correct and is output instead of the register data value.

Abstract: A plasma process power delivery system includes one or more event-ascertaining devices within the plasma process power delivery system, a controller in communication with the one or more event ascertaining devices, a first memory, a second memory, a data transmission connection, and a plasma process monitoring system. The data transmission connection is between the first memory and the second memory and is configured to transmit data relating to the plasma process power delivery system between the first memory and the second memory in response to an occurrence of a predefined event ascertained by one or more event-ascertaining devices. The plasma process monitoring system is in communication with the second memory and analyzes circumstances associated with the event that triggers the storage in the second memory using the data stored in the second memory.

Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses to save dynamic random access memory (DRAM) self-refresh power. In some embodiments, the refresh frequency of a DRAM is reduced and errors are allowed to occur. In error check mode, the DRAM stores data and corresponding error check bits. The error check bits may be used to scrub the memory and fix the errors.

Abstract: One embodiment of the present invention sets forth a method for implementing ECC protection in an on-chip L2 cache. When data is written to or read from an external memory, logic within the L2 cache is configured to generate ECC check bits and store the ECC check bits in the L2 cache in space typically allocated for storing byte enables. As a result, data stored in the L2 cache may be protected against bit errors without incurring the costs of providing additional storage or complex hardware for the ECC check bits.

Abstract: A method and apparatus to improve memory initialization in a memory of a computer system. Memory units in the memory comprise a plurality of ranks, each rank having a unique rank select. A parity generator outputs a parity bit corresponding to whether an encoded rank select has an even or odd number of “1”s. The parity bit is used by an Error Checking and Correcting (ECC) unit that generates ECC bits that are stored in a rank having an active rank select. During a first interval in a memory initialization period, ranks having an even number of “1”s in their encoded rank select are initialized in parallel. During a second interval in the memory initialization period, ranks having an odd number of “1”s in their encoded rank select are initialized in parallel.

Abstract: A memory system includes code data generating section which generates code data based on write data. A nonvolatile semiconductor memory stores the write data and the code data for the write data and outputs read data and the code data for the read data. An error correcting section is configured to correct an error bit included in the read data using the read data and the code data for the read data, and outputs the read data which includes the error bit in accordance with a setting. An interface section receives the write data from outside of the memory system, and outputs the read data to outside of the memory system.

Abstract: Electronic apparatus and fabrication of the electronic apparatus that includes detection of the majority of values in a plurality of data bits may be used in a variety of applications. Embodiments include application of majority bit detection to process data bits in a device for further analysis in the device based on the results of the majority bit detection. In an embodiment, such further processing in a memory device after majority bit detection may include data bit inversion prior to outputting the data from the memory device.

Abstract: Embodiments of the invention provide a multi-layer semiconductor memory device and a related error checking and correction (ECC) method. The multi-layer semiconductor memory device includes first and second memory cell array layers, wherein the first memory cell array layer stores first payload data. The multi-layer semiconductor memory device also includes an ECC engine selectively connected to the second memory cell array layer and configured to receive the first payload data, generate first parity data corresponding to the first payload data, and store the first parity data exclusively in the second memory cell array layer.

Abstract: Error detection circuitry is provided on a programmable logic resource. Programmable logic resource configuration data is loaded into a cyclic redundancy check (CRC) module where a checksum calculation may be performed. In one embodiment, the checksum may be compared to an expected value, which is a precomputed checksum on data prior to being programmed into or while data is being programmed into a programmable logic resource. In another embodiment, the expected value may be included in the checksum calculation. An output indicating whether an error is detected may be generated depending on the relationship between the checksum and the expected value, or on the value of the checksum. This output may be sent to an output pin that is accessible by user logic.

Abstract: A memory system and method using at least one memory device die stacked with and coupled to a logic die by interconnects, such as through silicon vias. One such logic die includes an ECC system generating error checking and correcting (“ECC) bits corresponding to write data. The write data are transmitted to the memory device dice in a packet containing a serial burst of a plurality of parallel data bits. The ECC bits are transmitted to the memory device dice using through silicon vias that are different from the vias through which data are coupled. Such a logic die could also include a data bus inversion (“DBI”) system encoding the write data using a DBI algorithm and transmitting to the memory device dice DBI bits indicating whether the write data have been inverted. The DBI bits are transmitted using through silicon vias that are shared with the ECC bits when they are unused for transferring the ECC bits.

Abstract: Embodiments of the invention relate generally to a method, to a data processing apparatus and to a wireless device. In an embodiment of the invention a data processing apparatus is provided. The data processing apparatus may include a chip-integrated unit to select a check location of an external memory and to generate a check value, an internal memory associated with the chip-integrated unit, the internal memory to save the check location and the check value, and an external memory coupled to the chip-integrated unit, the external memory to store the check value at the check location.

Abstract: An information processing apparatus comprising: a reception unit adapted to receive a packet containing first data to be stored in a storage unit, a first address indicating an address of second data held in the storage unit, and a second address indicating an address at which the first data is to be written in the storage unit; an access unit adapted to read out the second data from the storage unit based on the first address, and write the first data in the storage unit based on the second address; and a transmission unit adapted to replace the first data of the packet received by the reception unit with the second data read out by the access unit, and transmit the packet.

Abstract: Systems and methods of storing error correction data are provided. A method may include storing data at a first memory having a first non-volatile memory type. The method may also include determining error correction data related to the stored data. The method may further include storing the error correction data at a second memory having a second non-volatile memory type. The first non-volatile memory may have a slower random access capability than the second non-volatile memory.

Abstract: A circuit including a memory and an error correction code circuit. The memory including (i) a plurality of data storage cells and (ii) at least one reserved cell configured to store status information identifying a status of one or more of the plurality of data storage cells. Each of the data storage cells is configured to store a plurality of data bits. Each of the at least one reserved cell includes a multi-bit cell configured to store a lower density of information than each of the data storage cells. The error correction code circuit is configured to indicate, in a data stream formed from the memory, positions of data from the data storage cells for which status information is stored.

Abstract: An error correction circuit coupled to a plurality of memory cells in a memory device includes an error correcting code (“ECC”) generator and an ECC controller. The ECC generator is coupled to the memory cells and recognizes data bits stored in the memory cells as a plurality of data bit strings in a first direction and as a plurality of data bit strings in a second direction such that each data bit string in the first direction and each data bit string in the second direction share one data bit in common. The ECC generator generates a respective correction code in the first direction for each data bit string in the first direction and also generates a respective correction code in the second direction for each data bit string in the second direction. The ECC controller is coupled to the memory cells and the ECC generator.