Abstract: Among other things, one or more techniques and systems for performing design layout are provided. An initial design layout is associated with an electrical component, such as a standard cell. A conflict graph is generated based upon the initial design layout. The conflict graph comprises one or more nodes, representing polygons within the initial design layout, connected by one or more edges. A same-process edge specifies that two nodes are to be generated by the same pattern process, while a different-process edge specified that two nodes are to be generated by different pattern processes, such as a mandrel pattern process and a passive fill pattern process. The conflict graph is evaluated to identify a conflict, such as a self-aligned multiple pattering (SAMP) conflict, associated with the initial design layout. The conflict is visually displayed so that the initial design layout can be modified to resolve the conflict.

Abstract: A method for designing and making an integrated circuit is described. That method utilizes statistical models of wire segments to accurately estimate the expected length of minimum-length, orthogonal wire segments within a block. From these estimates, the method accurately estimates an ratio between the horizontal and vertical routing resources required, termed the “H/V Demand Ratio.” From the H/V Demand Ratio, an accurate estimate of the height and width of the block may be determined. Thereafter, placement and routing may be performed quickly and accurately, thereby allowing the block to be designed and manufactured quickly and cost effectively. A method for designing an integrated circuit with efficient metal-1 resource utilization is also described.

Abstract: A design support device includes placement determination unit, logic extraction unit, and logic placement unit. The placement determination unit performs the process of determining the optimum position of a first terminal of a first cell as a first position in which the inter-terminal wiring between the first cell and a second cell connected to the first cell through the first terminal is short. Furthermore, the logic placement unit performs the process of extracting one or more logical blocks including a logical block having the first terminal from the first cell, and arranging one or more logical blocks so that the first terminal may become close to the first position.

Abstract: A method embodiment includes identifying an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins and outside a minimum spacing boundary, applying a grid map over the empty region, wherein the grid map comprises a plurality of grids inside the empty region, and filling the empty region with a plurality of dummy fin cells by placing a dummy fin cell in each of the plurality of grids, wherein applying the grid map and filling the empty region is performed using a computer.

Abstract: Structure and methods for a semiconductor transistor design. The transistor structure comprises a field effect transistor having a multi-finger gate and three or more diffusion regions. Each diffusion region is identified as either a source region or a drain region, and each diffusion region is further identified as either an inner diffusion region or an outer diffusion region. Electrical contacts are established in the inner diffusion regions and the outer diffusion regions. There are approximately twice as many contacts in an inner source region as in the outer source region. There are approximately twice as many contacts in an inner drain region as in the outer drain region. The number and locations of contacts in each diffusion region are adjusted to reduce the difference among source node voltages of all fingers and the difference among drain node voltages of all fingers.

Abstract: According to example embodiments of inventive concepts, a method of designing a semiconductor integrated circuit includes: creating a marking layer that indicates at least one semiconductor device of a plurality of semiconductor devices that is to be changed in at least one of width, height, and space thereof from an adjacent semiconductor device; and applying the marking layer to a previously created layout to generate a new library of the at least one semiconductor device that is changed in at least one of width, height, and space from an adjacent semiconductor device. The marking layer may be based on a change in characteristics of the at least one semiconductor device of the plurality of semiconductor devices.

Abstract: An embodiment of an interposer is disclosed. In such an embodiment, there is a first printed circuit region and a second printed circuit region. The second printed circuit region is proximate to the first printed circuit region with a seam region between the first printed circuit region and the second printed circuit region. The seam region includes a first die seal and a second die seal spaced apart from one another with a scribe line located between the first die seal and the second die seal.

Abstract: A semiconductor chip has shapes on a particular level that are small enough to require a first mask and a second mask, the first mask and the second mask used in separate exposures during processing. A circuit on the semiconductor chip requires close tracking between a first and a second FET (field effect transistor). For example, the particular level may be a gate shape level. Separate exposures of gate shapes using the first mask and the second mask will result in poorer FET tracking (e.g., gate length, threshold voltage) than for FETs having gate shapes defined by only the first mask. FET tracking is selectively improved by laying out a circuit such that selective FETs are defined by the first mask. In particular, static random access memory (SRAM) design benefits from close tracking of six or more FETs in an SRAM cell.

Abstract: A method and apparatus to provide a capacitance to a design an integrated circuit is described. In one embodiment, the method receive a layout of the integrated circuit and applying canonical hierarchical models to the layout, wherein the canonical hierarchical models include a first type canonical model to capture a first capacitance of a device having a plurality of first conductors and a second type canonical model to capture a second capacitance between at least a portion of the device and one or more second conductors of the integrated circuit. The method further includes determining a capacitance for the layout based on the applying.

Abstract: A core circuit that can be connected in a hierarchical manner, and configured to test a multiple circuits is disclosed. The core circuit includes at least one real input for receiving scan-in data for controlling operation of the core circuit. The core circuit further includes an input register coupled to the at least one real input and configured to store data. The core circuit further includes at least one scan chain coupled a subset if registers of the register chain and configured to generate scan-out data representing the presence of faults in an circuit. Furthermore, the core circuit includes at least one control pseudo-output coupled to the input register and configured to route at least a subset of the data to another register chain in the core circuit or to another core circuit.

Abstract: A design system for designing an integrated circuit, and the design system includes a processor and a computer readable medium embodying computer program code. The computer program code includes instructions executable by the processor and configured to cause the processor to: modify a circuit design of the integrated circuit to compensate for an impact of layout parameters of the circuit design; generate at least one recommended layout parameter of an integrated circuit device within the integrated circuit; calculate a circuit performance parameter of the integrated circuit using the at least one recommended layout parameter; and generate a layout design of the modified circuit design of the integrated circuit according to the at least one recommended layout parameter.

Abstract: A three-dimensional semiconductor package and method for making the same include providing a first package layout parameter for a plurality of first terminals included in a first package, a second package layout parameter for a plurality of second terminals included in a second package disposed above or below the first package, and a connection terminal layout parameter for a plurality of connection terminals electrically connecting the first package and the second package; providing a first wiring connection layout between the first and second terminals and the connection terminals by applying a first process to the first package, second package, and connection terminal layout parameters; and providing a second wiring connection layout between the first and second terminals and the connection terminals by applying a second process, which is different from the first process, to the first wiring connection layout.

Abstract: A flip-flop operating with standard threshold voltage MOS devices as compared with high threshold voltage MOS devices may have improved speed performance, but greater leakage current. Likewise, a flip-flop operating with high threshold voltage MOS devices may reduce the leakage current and have better power efficiency, but decreased speed and performance. An optimized flip-flop may include a combination of standard threshold voltage MOS devices and high threshold voltage MOS devices. The optimized flip-flop may have less leakage during stand-by mode as compared to a flip-flop with standard threshold voltage MOS devices. In addition, the optimized flip-flop may have better performance and speed as compared to a flip-flop with high threshold voltage MOS devices.

Abstract: A design supporting device includes a calculator that calculates an estimated value of a width, shifted by etching, of a wiring arranged in each of partial regions formed by dividing a layout region of a circuit to be designed on basis of a density of the wiring of the partial region, a length of a circumference of the wiring and a distance between the partial region and another partial region affecting the partial region, and uses the calculated estimated value to recalculate the density of the wiring of the partial regions, and a changer that changes the density of the wiring on basis of relationships between a recalculated density of the wiring and a preset threshold for the density.

Abstract: Methodologies enabling BEoL VNCAPs in ICs and resulting devices are disclosed. Embodiments include: providing a plurality of mandrel recesses extending horizontally on a substrate, each of the mandrel recesses having an identical width and being separated from another one of the mandrel recesses by an identical distance; providing a plurality of routes, each of the plurality of routes being positioned in a different one of the mandrel recesses; and providing first and second vertical segments on the substrate, the first vertical segment being connected to a set of the plurality of routes and separated from the second vertical segment, and the second vertical segment being separated from the set of routes.

Abstract: A layout method of a semiconductor circuit is provided. The layout method is firstly putting a plurality of circuit patterns on a substrate, wherein a first distance is the largest distance between any one of the circuit patterns and one of other circuit patterns adjacent thereto. The layout method is then determining whether the first distance is larger than a first critical value. Later, when the first distance is larger than the first critical value, at least a closed loop dummy pattern is putted in one of the areas corresponding to the first distance between the pair of the circuit patterns. The closed loop dummy pattern is putted in a same layer with the circuit patterns, surrounds between the pair of circuit patterns and is insulated from the circuit patterns.

Abstract: A method of generating an optimized layout of semiconductor components in conformance with a set of design rules includes generating, for a unit cell including one or more semiconductor components, a plurality of configurations each of which satisfies some, but not all, of the design rules. For each configuration, it is checked whether a layout, which is a repeating pattern of the unit cell, satisfies the remaining design rules. Among the configurations which satisfy all of the design rules, the configuration providing an optimal value of a property is selected for generating the optimized layout of the semiconductor components.

Abstract: Systems and methods for avoiding restrictions on cell placement in a hierarchical design of integrated circuits with multi-patterning requirements are described. The method may be provided implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions operable to assign a color to each pattern shape in a first cell, assign a color to each pattern shape in a second cell, characterize quantities of interest for each pattern shape in the first cell, determine that the colors assigned in the first cell are all one to one mappable to the colors assigned in the second cells, characterize quantities of interest for each pattern shape in the second cell using the quantities of interest characterized for the first cell, and model the quantities of interest for the first cell and the second cell.

Abstract: A method of designing a microwave filter using a computerized filter optimizer, comprises generating a filter circuit design in process (DIP) comprising a plurality of circuit elements having a plurality of resonant elements and one or more non-resonant elements, optimizing the DIP by inputting the DIP into the computerized filter optimizer, determining that one of the plurality of circuit elements in the DIP is insignificant, removing the one insignificant circuit element from the DIP, deriving a final filter circuit design from the DIP, and manufacturing the microwave filter based on the final filter circuit design.

Abstract: A circuit design support apparatus includes a processor that is configured to generate area information that indicates a plurality of areas obtained by dividing a predetermined area in a circuit by a constant interval; generate first layout data that indicates arrangement of buffer cells capable of supplying clock signals to other cells, at least one buffer cell being disposed in each of the areas indicated by the area information; generate based on the first layout data, second layout data that indicates arrangement of the buffer cells and arrangement of flip-flop cells disposed in the predetermined area; and output the second layout data.

Abstract: An assignment method of terminals of a semiconductor package executed by an assignment supporting apparatus includes: deciding a maximum allowable distance to be a constraint condition regarding a relative distance between each of the pads and a terminal to be assigned to the pad, and extracting one or a plurality of assigned terminal candidates for each of the pads so that the relative distance between each of the pads and a terminal selected for the pad falls within a range of the maximum allowable distance; and deciding one of the terminals as a assigned terminal based on the assigned terminal candidates and assigning the one of the terminals to one of the pads. The process is a process to assign one of the terminals with priority to a pad having a smallest number of assigned terminal candidates in a not-assigned condition based on the assigned terminal candidates.

Abstract: A method generally comprises arranging a plurality of layer combinations into a plurality of groups such that each of the layer combinations is assigned to at least one group. A shifting analysis is performed on a plurality of benchmark circuits for each of the groups. At least one tuning vector value is calculated based, at least in part, on a plurality of criteria vectors of the benchmark circuits. A shift is applied on each of the groups by the tuning vector value and a technology file, such as a 2.5 dimensional RC techfile, is regenerated.

Abstract: The present disclosure relates to a method of RC extraction that provides for a fast development time and easy maintenance. In some embodiments, the method provides a graphical representation of an integrated chip layout having a plurality of integrated chip components. A plurality of pattern based graphical features are then determined. Respective pattern based graphical features define a structural aspect of an integrated chip component. One of the plurality of integrated chip components is defined as a pattern oriented function having inputs of one or more of the pattern based graphical features. The pattern oriented function determines a shape of the one of the plurality of integrated chip components based upon a relation between the plurality of inputs. By determining a shape of an integrated chip component using a pattern oriented function, the complexity of RC profiles can be reduced.

Abstract: A design problem can include a mixture of hard constraints and soft constraints. The soft constraints can be prioritized and the design problem solved. One or more soft constraints may not be honored in the midst of the solving of the design problem. Debugging can be performed and the unsatisfied soft constraints identified. Root-cause analysis can evaluate the challenges within the design problem which caused soft constraints not to be honored.

Abstract: A method of provisioning an integrated circuit with decoupling capacitance includes identifying in an initial design of the integrated circuit lacking decoupling elements, a standard cell instance satisfying a transient power or frequency switching criteria. Based on a transient power characteristic of the standard cell instance, a decoupling capacitance requirement for the standard cell instance is determined. The decoupling capacitance requirement indicates a capacitance sufficient to bring the standard cell instance into compliance with a stability constraint on a supply voltage node of the standard cell instance. A decoupling capacitor satisfying the decoupling capacitance requirement is provisioned by appending an appropriate sized decap transistor having one or more gate electrode elements to the standard cell instance.

Abstract: A hybrid clock distribution system uses a distribution fabric to distribute clock signals across longer physical distances and local sub-distribution networks to distribute clock signals more locally and to implement logic functions such as clock gating. A set of tap drivers connect the distribution fabric to the sub-distribution networks. A design tool automatically generates and places the set of tap drivers.

Abstract: A method is disclosed for defining an integrated circuit. The method includes generating a digital data file that includes both electrical connection information and physical topology information for a number of circuit components. The method also includes operating a computer to execute a layout generation program. The layout generation program reads the electrical connection and physical topology information for each of the number of circuit components from the digital data file and automatically creates one or more layout structures necessary to form each of the number of circuit components in a semiconductor device fabrication process, such that the one or more layout structures comply with the physical topology information read from the digital data file. The computer is also operated to store the one or more layout structures necessary to form each of the number of circuit components in a digital format on a computer readable medium.

Abstract: A semiconductor integrated circuit and a pattern lay-outing method for the same are disclosed, which can suppress bending or partial drop-out of a dummy pattern even when a mechanical stress acts on the dummy pattern in CMP. The semiconductor integrated circuit includes predetermined functional areas and a dummy pattern formed in a space area. The space area is positioned between predetermined functional areas. The dummy pattern includes a first metal portion formed in the shape of a frame and defining an outer edge of the dummy pattern, a second metal portion positioned on an inner periphery side of the first metal portion and formed so as to be continuous with the first metal portion, and a plurality of non-forming areas positioned in an area where the second metal portion is not formed on the inner periphery side of the first metal portion.

Abstract: A method embodiment includes identifying an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins and outside a minimum spacing boundary, applying a grid map over the empty region, wherein the grid map comprises a plurality of grids inside the empty region, and filling the empty region with a plurality of dummy fin cells by placing a dummy fin cell in each of the plurality of grids, wherein applying the grid map and filling the empty region is performed using a computer.

Abstract: A method includes generating a three-dimensional table. The table cells of the three-dimensional table comprise normalized parasitic capacitance values selected from the group consisting essentially of normalized poly-to-fin parasitic capacitance values and normalized poly-to-metal-contact parasitic capacitance values of Fin Field-Effect Transistors (FinFETs). The three-dimensional table is indexed by poly-to-metal-contact spacings of the FinFETs, fin-to-fin spacings of the FinFETs, and metal-contact-to-second-poly spacings of the FinFETs. The step of generating the three-dimensional table is performed using a computer.

Abstract: First and second pin groups are each formed from a plurality of pins associated with specific nets. Pins in the first pin group are to be wired to pins in the second pin group according to their associated nets. A candidate selection unit selects a set of pair candidates each specifying a first pair of pins in the first pin group and a second pair of pins in the second pin group. The first and second pairs of pins are associated with the same pair of nets, and their respective distances are within a specified range. A pair determination unit determines which pins in the first and second pin groups are to be wired in pairs, based on the pair candidates selected by the candidate selection unit.

Abstract: A method of designing a circuit is described. In an embodiment, a physical design implementation for the circuit is created using a plurality of entities. These entities are named “genomes”. Each entity includes a portion of a functional description of the circuit that has been synthesized into a gate-level implementation. An entity is selected to facilitate the physical design implementation meeting a plurality of design constraints. Several steps (e.g., beginning with selection of an entity) of this method are repeated several times to meet the design constraints. As a consequence, the physical design implementation provides more accurate information for use in a final physical design implementation. Moreover, the physical design implementation can be created faster than prior techniques while still allowing a global view of the physical design implementation in meeting design constraints.

Abstract: A method includes generating a three-dimensional table. The table cells of the three-dimensional table comprise normalized parasitic capacitance values selected from the group consisting essentially of normalized poly-to-fin parasitic capacitance values and normalized poly-to-metal-contact parasitic capacitance values of Fin Field-Effect Transistors (FinFETs). The three-dimensional table is indexed by poly-to-metal-contact spacings of the FinFETs, fin-to-fin spacings of the FinFETs, and metal-contact-to-second-poly spacings of the FinFETs. The step of generating the three-dimensional table is performed using a computer.

Abstract: A method including developing a circuit schematic diagram, the circuit schematic diagram including a plurality of cells. The method further includes generating cell placement rules for the plurality of cells based on the circuit schematic diagram and developing a circuit layout diagram for the plurality of cells based on the cell placement rules. The method further includes grouping the plurality of cells of the circuit layout diagram based on threshold voltages and inserting threshold voltage compliant fillers into the circuit layout diagram. A system for implementing the method is described. A layout formed by the method is also described.

Abstract: A die includes at least one standard cell, which includes a first boundary and a second boundary opposite to the first boundary. The first boundary and the second boundary are parallel to a first direction. The at least one standard cell further includes a first plurality of FinFETs including first semiconductor fins parallel to the first direction. The die further includes at least one memory macro, which has a third boundary and a fourth boundary opposite to the third boundary. The third boundary and the fourth boundary are parallel to the first direction. The at least one memory macro includes a second plurality of FinFETs including second semiconductor fins parallel to the first direction. All semiconductor fins in the at least one standard cell and the at least one memory macro have pitches equal to integer times of a minimum pitch of the first and the second semiconductor fins.

Abstract: Example implementations described herein are directed to a floor plan for a Network on Chip (NoC) topology that can include a plurality of on chip blocks of substantially non-uniform shapes and dimensions. An interconnection network is synthesized along with a plan for a physical layout of the interconnection network based on physical dimensions of the plurality of on chip blocks, the physical dimensions of the floorplan and relative placement information for placing the plurality of on chip blocks on the floorplan. Porosity information for the plurality of on chip blocks on the floorplan and required chip functionality may also be taken into consideration.

Abstract: The present invention discloses methods and apparatuses to design an integrated circuit. According to one aspect, the present invention circuit design discloses an iterative process of synthesis and placement where each iteration provides incremental changes on the design of the integrated circuit. The synthesis transform is then made with accurate timing information from the placement, and the process is incrementally iterative toward the final timing enclosure of the design. The incrementally iterative approach of the present invention provides a continuous advancement from synthesis to placement and vice versa, with the incremental improvements on synthesis made with knowledge of current instance placement, and the incremental improvements on placement made with knowledge of current circuit logic.

Abstract: An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks.

Abstract: Example implementations described herein are directed to a system on chip (SoC) that can include a plurality of blocks of substantially non-uniform shapes and dimensions, a plurality of routers, and a plurality of links between routers. The plurality of blocks and the plurality of routers are interconnected by the plurality of links using a Network-on-Chip (NoC) architecture with a sparse mesh topology. The sparse mesh topology involves a sparsely populated mesh which is a subset of a full mesh having one or more of the plurality of routers or links removed. The plurality of blocks communicate among each other by routing messages over the remaining ones of the plurality of routers and links of the sparse mesh.

Abstract: A method for use in electronic design software efficiently and optimally produces minimized or reduced register flip flop area or number of registers/flip flops in a VLSI circuit design without changing circuit timing or functionality. The method dynamically generates constraints; maintains the generated constraints as a regular tree; and incrementally relocates registers/flip flops and/or the number of registers/flip flops in the circuit design.

Abstract: Self-aligned via interconnects using relaxed patterning exposure. In accordance with a first method embodiment, a method for controlling a computer-aided design (CAD) system for designing physical features of an integrated circuit includes accessing a first pattern for first metal traces on a first metal layer, accessing a second pattern for second metal traces on a second metal layer, vertically adjacent to the first metal layer and accessing a precise pattern of intended interconnections between the first and second metal traces. The precise pattern of intended interconnections is operated on to form an imprecise via pattern that indicates a plurality of general areas in which vias are allowed. The imprecise via pattern is for use in an integrated circuit manufacturing process to form, in conjunction with operations to form the first and second metal layers, a plurality of self-aligned vias for interconnecting the intended interconnections.

Abstract: A method for designing a semiconductor ic chip includes dividing the chip into functional blocks such as a core portion and one or more other functional cells and applying design rules concerning the spatial arrangement of semiconductor fins to the core portion but not to the other functional cells. The design guidelines include the application of design rules to some but not all functional blocks of the chip, may be stored on a computer-readable medium and the design of the semiconductor ic chip and the generation of a photomask set for manufacturing the semiconductor ic chip may be carried out using a CAD or other automated design system. The semiconductor ic chip formed in accordance with this method includes semiconductor fins that are formed in both the core portion and the other functional cells but are only required to be tightly packed in the core portion.

Abstract: A system includes a memory and a controller. The controller may include a group of pads and an allocation register. The controller is configured to receive input signals corresponding to the group and allocate each one of the pads to output one of the input signals based on a configuration of pins of the memory. The controller is also configured to redirect the input signals, within the controller, based on the allocation of the pads and output the input signals from the controller into the pads.

Abstract: Methods for designing fin-based field effect transistors (FinFETs) are disclosed. In one embodiment, an initial FinFET design is evaluated to ascertain the space between fins (i.e., the “fin pitch”). Additionally, the spacing between interconnect metal modules (i.e., the “metal pitch”) is ascertained. A ratio of metal pitch to fin pitch is established. From this initial ratio, isotropically scaled sizes are considered along with anisotropically scaled sizes. The variously scaled sizes are compared to design criteria to see what new size best fits the design criteria.

Abstract: Embodiments of the disclosure relate to methods for facilitating the design of a clock grid in an integrated circuit. The method includes propagating a chip level virtual grid across a multi-level hierarchy of the integrated circuit and customizing the grid at each macro to create a customized virtual grid for each macro. The method further includes propagating the customized virtual grid for each of the plurality of macros to one of a plurality of units and customizing the chip level virtual grid at each of the plurality of units to create the customized virtual grid for each of the plurality of units. The method also includes propagating the customized virtual grid for each of the plurality of units to the chip level and combining the plurality of customized virtual grids to form the clock grid for the integrated circuit.

Abstract: A system and method for design and modeling of vertical interconnects for 3DI applications. A design and modeling methodology of vertical interconnects for 3DI applications includes models that represent the frequency dependent behavior of vertical interconnects by means of multi-segment RLC scalable filter networks. The networks allow for accuracy versus computation efficiency tradeoffs, while maintaining correct asymptotic behavior at both high and low frequency limits. In the framework of the model it is shown that a major effect is pronounced frequency dependent silicon substrate induced dispersion and loss effects, which is considered in through silicon via (TSV) parallel Y-element parameters, including capacitance and conductance.

Abstract: Methodology enabling designs with a reduced V0 distance to M1 inner vertex restriction is disclosed. Embodiments include determining a limiting parameter ? for manufacture of an SAV proximate to an M1 inner vertex; defining a coordinate system in terms of horizontal and vertical distances x and y, respectively, between the SAV and the M1 inner vertex angle; calculating ? as a function of x and y; simulating the calculation of ? as a function of x and y; calculating a baseline angle ?1 as a function of x and y; simulating calculation of the baseline angle ?1 as a function of x and y; extracting a 3? value of the baseline angle ?1 from the simulation; and designing a semiconductor cell with an SAV proximate to an M1 inner vertex, the cell having a limiting parameter ? minimum value equal to the 3? value of the baseline angle ?1.

Abstract: A three-dimensional semiconductor package and method for making the same include providing a first package layout parameter for a plurality of first terminals included in a first package, a second package layout parameter for a plurality of second terminals included in a second package disposed above or below the first package, and a connection terminal layout parameter for a plurality of connection terminals electrically connecting the first package and the second package; providing a first wiring connection layout between the first and second terminals and the connection terminals by applying a first process to the first package, second package, and connection terminal layout parameters; and providing a second wiring connection layout between the first and second terminals and the connection terminals by applying a second process, which is different from the first process, to the first wiring connection layout.

Abstract: Among other things, one or more techniques and systems for performing design layout are provided. An initial design layout is associated with an electrical component, such as a standard cell. A conflict graph is generated based upon the initial design layout. The conflict graph comprises one or more nodes, representing polygons within the initial design layout, connected by one or more edges. A same-process edge specifies that two nodes are to be generated by the same pattern process, while a different-process edge specified that two nodes are to be generated by different pattern processes, such as a mandrel pattern process and a passive fill pattern process. The conflict graph is evaluated to identify a conflict, such as a self-aligned multiple pattering (SAMP) conflict, associated with the initial design layout. The conflict is visually displayed so that the initial design layout can be modified to resolve the conflict.

Abstract: Methods for generating a device layout are provided. First, design rules corresponding to a specific technology are received. A selection of at least one element and a parameter value corresponding to at least one parameter on the selected element are received. A draft device layout corresponding to the selected element is generated by a device generator by referencing the parameter value and the design rules. A script is then executed to modify the draft device layout to generate an updated device layout. The script includes at least one command, and when the script is executed, the at least one command is performed to modify the parameter value of the at least one parameter of the selected element and cause the device generator to delete the old draft device layout and generate a new draft device layout by referencing the modified parameter value and the design rules.