Abstract: Integrated structures include (among other components) a deep well structure having a first impurity, well rows contacting the deep well structure and having a second impurity, a well contact ring enclosing the well rows within an enclosed area, a transistor layer on the well rows, transistors within the transistor layer, and at least one ring-enclosed contact contacting the deep well structure. The ring-enclosed contact is positioned within the enclosed area. Such structures further include a well contact connection contacting the well contact ring and the ring-enclosed contact.

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate with first-conductivity-type impurities; first and second active regions provided on the substrate; a first deep element isolation layer surrounding the first active region; a second deep element isolation layer surrounding the second active region; a suction region surrounding the first and second deep element isolation layers, the suction region including the first-conductivity-type impurities; a well region provided in the substrate between the first and second active regions, the well region including second-conductivity-type impurities different from the first-conductivity-type impurities; a shallow element isolation layer provided between the suction region and the well region; and a guard structure connected to the suction region. The substrate includes a signal path portion that is provided between a top surface of the substrate and the well region, and surrounds an upper portion of the well region.

Abstract: A 3D semiconductor device, the device including: a first level including a plurality of first metal layers; a second level, where the second level overlays the first level, where the second level includes at least one single crystal silicon layer, where the second level includes a plurality of transistors, where each transistor of the plurality of transistors includes a single crystal channel, where the second level includes a plurality of second metal layers, where the plurality of second metal layers include interconnections between the transistors of the plurality of transistors, and where the second level is overlaid by a first isolation layer; and a connective path from the plurality of transistors to the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, and where at least one of the via includes a contact to at least one of the transistors.

Abstract: Embodiments of the invention provide a method that includes forming an IC layer having an inactive region and an active region. The active region includes a device-under-fabrication (DUF). The inactive region includes a geometric feature having a geometric shape. A film is deposited over the active DUF and the geometric feature such that a first portion of the film will be part of the active DUF, and such that a second portion of the film is over the geometric feature. A geometric shape of the film over the geometric feature matches the geometric shape of the geometric feature. Determining a thickness of the film is based at least in part a difference between a footprint of the geometric shape of the film and a footprint of the geometric shape of the geometric feature.

Abstract: Embodiments of the present application provide a memory and a method for forming the memory. The method includes: providing a substrate, and forming a bit line structure on the substrate and a first protective layer; forming a dielectric layer with which a gap between the adjacent bit line structures is filled; forming a second protective layer to cover a top surface of the first protective layer and a top surface of the dielectric layer; removing part of the dielectric layer and part of the second protective layer to form a capacitor contact hole, and exposing the first protective layer between two adjacent ones of the capacitor contact holes; forming a conductive layer with which the capacitor contact hole is filled and the top surface of the exposed first protective layer is covered, and etching part of the conductive layer to form a separate capacitor contact structure.

Abstract: An electronics assembly includes a motor controller electronics arrangement with a solid-state switch array, a feeder cable connected to the motor controller and in electrical communication with the solid-state switch array, and a phase change material body. The phase change material body is thermally coupled to the feeder cable and arranged outside of the motor controller to limit conduction of heat generated by resistive heating of the feeder cable into the motor controller and through the feeder cable. Vehicles, electrical systems, and methods of cooling feeder cables in motor controller electronics arrangements are also described.

Abstract: A semiconductor device, the device including: a first silicon layer including first single crystal silicon; an isolation layer disposed over the first silicon layer; a first metal layer disposed over the isolation layer; a second metal layer disposed over the first metal layer; a first level including a plurality of transistors, the first level disposed over the second metal layer, where the isolation layer includes an oxide to oxide bond surface, where the plurality of transistors include a second single crystal silicon region; and a third metal layer disposed over the first level, where a typical first thickness of the third metal layer is at least 50% greater than a typical second thickness of the second metal layer.

Abstract: A memory cell including a set of active regions that overlay a set of gate regions to form a pair of cross-coupled inverters. A first active region extends along a first axis. A first gate region extends transversely to the first active region and overlays the first active region to form a first transistor of the pair of cross-coupled inverters. A second gate region extends transversely to the first active region and overlays the first active region to form a second transistor of the pair of cross-coupled inverters. A second active region extends along a second axis and overlays the first gate region to form a third transistor of the pair of cross-coupled inverters. A fourth active region extending along a third axis and overlays a gate region to form a transistor of a read port.

Abstract: An organic optoelectronic device comprises a substrate having first and second regions, a first electrode positioned over the first region of the substrate, a shutter electrode positioned over the second region of the substrate, an organic heterojunction layer comprising an organic heterojunction material, positioned over at least a portion of the first electrode, an insulator layer positioned over at least a portion of the shutter electrode, an organic channel layer, comprising an organic channel material, positioned over at least a portion of the heterojunction and insulator layers, and a second electrode positioned over the channel layer in the second region of the substrate, wherein the shutter electrode is configured to generate a repulsive potential barrier in the channel layer, suitable to at least reduce movement of charge in the channel layer. A method of measuring received light in an optoelectronic device is also described.

Abstract: A capacitor includes an electrode implemented in an electrode well of a substrate. The electrode well has a net N-type dopant concentration. The capacitor includes an electrode implemented in a conductive structure located above the substrate. The electrodes are separated by a dielectric layer located between the electrodes. A first tub region having a net P-type conductivity dopant concentration is located below and laterally surrounds the electrode well and a second tub region having a net N-type conductivity dopant concentration is located below and laterally surrounds the first tub region and the electrode well.

Abstract: A reliable semiconductor device and a method for preparing the reliable semiconductor device are provided. The semiconductor device includes at least one die comprising an integrated circuit region; a first recess region surrounding the integrated circuit region; and a second recess region surrounding the first recess region. A first columnar blocking structure is disposed in the first recess region and a second columnar blocking structure is disposed in the second recess region.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. The semiconductor device includes a first channel members being vertically stacked, a second channel members being vertically stacked, an n-type work function layer wrapping around each of the first channel members, a first p-type work function layer over the n-type work function layer and wrapping around each of the first channel members, a second p-type work function layer wrapping around each of the second channel members, a third p-type work function layer over the second p-type work function layer and wrapping around each of the second channel members, and a gate cap layer over a top surface of the first p-type work function layer and a top surface of the third p-type work function layer such that the gate cap layer electrically couples the first p-type work function layer and the third p-type work function layer.

Abstract: Embodiments of staircase structures of a three-dimensional memory device and fabrication method thereof are disclosed. The semiconductor structure includes a first and a second film stacks, wherein the first film stack is disposed over the second film stack and has M1 number of layers. The second film stack has M2 number of layers. M1 and M2 are whole numbers. The semiconductor structure also includes a first and a second staircase structures, wherein the first staircase structure is formed in the first film stack and the second staircase structure is formed in the second film stack. The first and second staircase structures are next to each other with an offset.

Abstract: A semiconductor device includes a substrate including a first cell region, a second cell region adjacent to the first cell region in a first direction, and a comparison region adjacent the first and second cell regions in a second direction, a bit line in a first metal level on the substrate and extending in the first direction, and a first ground rail in a second metal level different from the first metal level. The first ground rail comprises a first sub-ground rail extending in the second direction on the first cell region, a second sub-ground rail extending in the second direction on the second cell region, a third sub-ground rail connecting the first sub-ground rail to the second sub-ground rail on the first and second cell regions, and a fourth sub-ground rail that branches off from the third sub-ground rail and extends in the second direction.

Abstract: 3D integrated circuit (3DIC) device architecture is disclosed for monolithically heterogeneous integration of III-V devices over Si-CMOS devices with high-quality (HQ) integrated passives devices (IPD) or re-distributed layers (RDL). In addition, a thermal spreader may be added over the upper III-V tier to enhance device power performance (e.g., PAE for PA) and device reliability (e.g., with a reduced Tj/junction temperature).

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.

Abstract: Damascene plug and tab patterning with photobuckets for back end of line (BEOL) spacer-based interconnects is described. In an example, a back end of line (BEOL) metallization layer for a semiconductor structure includes an inter-layer dielectric (ILD) layer disposed above a substrate. A plurality of conductive lines is disposed in the ILD layer along a first direction. A conductive tab is disposed in the ILD layer. The conductive tab couples two of the plurality of conductive lines along a second direction orthogonal to the first direction.

Abstract: A method of manufacturing a semiconductor device according to example embodiments includes: sequentially forming first through third insulating layers on a substrate; forming an opening by etching the first through third insulating layers; forming a conductive layer configured in the opening; forming a fourth insulating layer in the opening after the forming of the conductive layer; and removing a portion of an edge region of the substrate after the forming of the fourth insulating layer.

Abstract: A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): a polymer containing a unit structure of the following Formula (2): O—Ar1??Formula (2) a polymer containing a structural unit of the following Formula (3): O—Ar2—O—Ar3-T-Ar4??Formula (3) a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.

Abstract: Structures including electrical isolation and methods of forming a structure including electrical isolation. A semiconductor layer is formed over a semiconductor substrate and shallow trench isolation regions are formed in the semiconductor layer. The semiconductor layer includes single-crystal semiconductor material having an electrical resistivity that is greater than or equal to 1000 ohm-cm. The shallow trench isolation regions are arranged to surround a portion of the semiconductor layer to define an active device region. A polycrystalline layer is positioned in the semiconductor layer and extends laterally beneath the active device region and the shallow trench isolation regions that surround the active device region.

Abstract: Disclosed examples include redundant Power over Ethernet (PoE) systems, powered device (PD) controllers and methods in which a first PD controller sends a signal to indicate to the other PD controllers that the first PD controller is powered, and a second PD controller newly connected or reconnected to a corresponding power sourcing equipment (PSE) refrains from turning off a shared DC-DC converter, and the second PD controller waits to allow an inrush current delay of the corresponding PSE to complete before allowing current flow between the DC-DC converter and the corresponding PSE, and the second PD controller selectively provides a signal to request an application circuit powered by the DC-DC converter to temporarily reduce its power consumption below a predetermined value if the corresponding PSE is configured to provide no more than the predetermined value of power.

Abstract: Method for producing a JFET transistor, comprising: a) producing, on a first substrate, a stack comprising a first layer comprising a first semiconductor doped according to a first conductivity type and a second layer comprising a second semiconductor doped according to a second conductivity type, the first layer being disposed between the first substrate and the second substrate, then b) securing the stack against a second substrate such that the stack is disposed between the first substrate and the second substrate, then c) removing the first substrate, then d) etching the first layer such that a remaining portion of the first layer forms a front gate of the first JFET transistor, then e) etching the second layer such that a remaining portion of the second layer is disposed below the front gate of the first JFET transistor and forms the channel, the source and the drain of the JFET transistor.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.

Abstract: In some embodiments, the present disclosure relates to a three dimensional (3D) integrated circuit (IC) stack, including a first IC die having a first substrate and a first interconnect structure over a frontside of the first substrate; a second IC die having a second substrate and a second interconnect structure over the frontside of the second substrate; and a third IC die vertically between the first and second IC dies and having a third substrate, a third interconnect structure over the frontside of the third substrate, and a third bonding structure over a backside of the third substrate. A heat dissipation path extends from the third substrate to at least the first or second substrate, and includes a backside contact that extends from the third bonding structure to the backside of the third substrate and that is thermally coupled to at least the first or second interconnect structure.

Abstract: Embodiments of the present disclosure describe techniques for reducing in-plane distortion from wafer to wafer bonding using a dummy wafer. One embodiment is an apparatus formed using a dummy wafer, the apparatus comprising: a device layer fusion bonded to a first side of a carrier wafer, wherein the dummy wafer comprises a first wafer and the carrier wafer comprises a second wafer that is different than the first wafer; wherein the device layer comprise a portion of a third wafer that is different than the second wafer; and wherein a second opposite side of the carrier wafer includes: a removal process artifact, wherein a distortion signature present in the portion of the second wafer is indicative of the use of the dummy wafer fusion bonded to the second side of the carrier wafer, or a remainder of the dummy wafer. Other embodiments may be disclosed and/or claimed.

Abstract: A semiconductor device includes a base and a conductive layer to form a composite substrate. The conductive layer covers a surface of the base. The semiconductor device also includes a dielectric layer covering the conductive layer. The conductive layer is disposed between the dielectric layer and the base. The semiconductor device further includes a GaN-containing composite layer, a gate electrode disposed over the GaN-containing composite layer, a source electrode and a drain electrode disposed on the GaN-containing composite layer. The source electrode and the drain electrode are disposed at two opposite sides of the gate electrode. In addition, a method for manufacturing the semiconductor device with a composite substrate is provided.

Abstract: A memory device includes a semiconductor substrate, a logic transistor, and a storage transistor. The semiconductor substrate has a logic region and a memory region. The logic transistor is disposed on the logic region, in which the logic transistor comprises a high-k metal gate structure. The storage transistor is disposed on the memory region, in which the storage transistor includes a charge storage structure and a high-k metal gate structure. The charge storage structure is disposed on the memory region. The high-k metal gate structure is disposed on the charge storage structure.

Abstract: Program procedures executed to rout a bus, via a processing unit, include a bus information extractor configured to extract bus information including physical requirements for the bus, from input data, a buffer array generator configured to generate a buffer array in which buffers included in the bus are regularly arranged based on the bus information, a buffer array placer configured to place at least one buffer array in the layout of the integrated circuit based on the bus information, and a wiring procedure configured to generate interconnections connected to buffers included in the at least one buffer array based on the bus information.

Abstract: A memory device includes a semiconductor device on a wafer. The semiconductor device includes a gate structure, a first source/drain region, and a second source/drain region. The gate structure is on the first side of the wafer. The first source/drain region is also on the first side of the wafer, and contacts a first end of the gate structure. The second source/drain region is on the second side of the wafer and extends into the first side to contact a second end of the gate structure. The memory device further includes a memory storage element on the second side of the wafer. The memory storage element contacts the second source/drain region.

Abstract: A powered communication device (31) comprises: a configurable resistor unit (35) coupled to the LAN port and adapted to generate a classification signal designating a power class of the powered communication device to be detected by the LAN switch, and a power module comprising a power converter (38) adapted to supply power to the electronic control unit (40) and to the peripherals in response to receiving power from the LAN port, wherein the electronic control unit (40) is configured to determine a power requirement of the communication device, detect a current resistance state of the configurable resistor unit (35) and, in response to detecting that the power requirement overshoots a power class associated to the current resistance state of the configurable resistor unit: reconfigure the configurable resistor unit (35) to designate a higher power class and, actuate the power switch (37) to transitorily put the LAN port (33) in a low-current state to be detected by the LAN switch.

Abstract: A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

Abstract: A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction.

Abstract: In a method, based on an operating condition of a region of an integrated circuit (IC), a first relationship between a temperature and heating power of the region is determined. Based on a cooling capacity of the region, a second relationship between the temperature and cooling power of the region is determined. Based on the first relationship and the second relationship, it is determined whether the region is thermally stable. In response to a determination that the region is thermally unstable, at least one of a structure or the operating condition of the region is changed. At least one of the determination of the first relationship, the determination of the second relationship, the determination of thermally stability of the region, or the change of at least one of the structure or the operating condition of the region is executed by a processor.

Abstract: A method includes identifying fingers of a first device and fingers of a second device. The method includes grouping the fingers of the first device into a first finger group and a second finger group, wherein the first finger group is electrically connected to the second finger group. The method further includes positioning the first finger group extends across a first doped region. The method further includes positioning the second finger group extends across a second doped region, wherein the second doped region has a same dopant type as the first doped region. The method further includes grouping the fingers of the second device into a third finger group and a fourth finger group, wherein the third finger group is electrically connected to the fourth finger group. The method further includes positioning the third finger group and the fourth finger group extending across the second doped region.

Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.

Abstract: Described herein is an integrated circuit device comprising a conductive line structure including a bit line and an insulating capping pattern; and an insulating spacer covering a side wall of the conductive line structure, the insulating spacer including an inner spacer and a char spacer. To form the insulating spacer, a polymer brush pattern may be chemically bonded to the inner spacer to cover a side wall of the conductive line structure; a first insulating spacer film covering the inner spacer and the polymer brush pattern may be formed; and a char spacer may be formed from the polymer brush pattern by pyrolyzing the polymer brush pattern in the absence of oxygen.

Abstract: A semiconductor device is disclosed including one or more integrated memory modules. Each integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the first die may be flip-chip bonded to the second die.

Abstract: A semiconductor memory device of an embodiment includes a stacked body having a stepped portion in which a plurality of metal layers is stacked via an insulating layer, and end portions of the plurality of metal layers are formed in a stepwise manner, a plurality of columnar portions arranged in steps of the stepped portion and penetrating the stepped portion, and a band portion provided near a leading end portion of the metal layer of a lowermost step of the stepped portion, the band portion extending in a first direction along the leading end portion and dividing the stacked body and a peripheral region of the stacked body, in which a coverage of the columnar portions arranged in the lowermost step is larger than a coverage of the columnar portions arranged in an upper step adjacent to the lowermost step only in a second direction toward a region where memory cells are arranged.

Abstract: A semiconductor device includes: a semiconductor base 10 in which a first trench 101 is formed in a mesh-like shape in a plan view and a second trench 102 is formed in a mesh opening surrounded by the first trench 101; a first semiconductor element 1 which is formed in the semiconductor base 10 and includes a first gate electrode 81 provided within the first trench 101; and a second semiconductor element 2 which is formed in the semiconductor base 10 and includes a second gate electrode 82 provided within the second trench 102 surrounded by the first gate electrode 81.

Abstract: Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first device layer, a second device layer and an inter-level connection structure. The first device layer includes a first conductive layer and a first dielectric layer formed on the first conductive layer, the first device layer being formed on a substrate. The second device layer includes a second conductive layer, the second device layer being formed on the first device layer. The inter-level connection structure includes one or more conductive materials and configured to electrically connect to the first conductive layer and the second conductive layer, the inter-level connection structure penetrating at least part of the first dielectric layer. The first conductive layer is configured to electrically connect to a first electrode structure of a first semiconductor device within the first device layer.

Abstract: A first layer is located over a substrate. The first layer includes a first dielectric component and a first conductive component. A first etching stop layer is located over the first dielectric component. A metal capping layer is located over the first conductive component. A second etching stop layer is located over the first etching stop layer and over the metal capping layer. A second layer is located over the second etching stop layer. The second layer includes a second dielectric component and a second conductive component. A third conductive component electrically interconnects the second conductive component to the first conductive component.

Abstract: A method of forming an integrated circuit is provided. The method includes several operations. A semiconductor substrate is received, and a conductive grid is disposed over the semiconductor substrate, wherein the conductive grid includes a plurality of non-continuous conductive lines. A plurality of first conductive lines and a plurality of second conductive lines are selected from the plurality of non-continuous conductive lines. The plurality of second conductive lines is replaced by a plurality of third conductive lines respectively, wherein a space between adjacent third conductive lines is greater than a space between adjacent second conductive lines. A system configured to perform the method is also provided.

Abstract: The present embodiments provide a region of a semiconductor device comprising a plurality of power transistor cells configured as trench MOSFETs in a semiconductor substrate. At least one active power transistor cell further includes a trenched source region wherein a trench bottom surface of the trenched source contact is covered with an insulation layer and layer of a conductive material on top of the insulation layer, to function as an integrated pseudo Schottky barrier diode in the active power transistor cell.

Abstract: A vibration device includes: a base substrate which is a first conductivity type semiconductor substrate; a lid substrate; a vibration element disposed between the base substrate and the lid substrate; a wiring disposed on a surface of the base substrate at the lid substrate side; and a coupling member that electrically couples the wiring and the vibration element to each other. The base substrate includes a second conductivity type well, which is different from the first conductivity type, and a first conductivity type first contact area that is disposed in the well and that has a first contact surface which is a part of the surface. The wiring and the coupling member are in contact with the first contact surface, and are electrically coupled to each other via the first contact area.

Abstract: A method for reducing transistor sensitivity to shallow trench isolation defects (STI) includes filling a trench formed in a substrate of a semiconductor device, at least partially, with a first oxide, the trench defines an STI and includes a defect extending from the substrate. A mask defines a planar area within the isolation region including a first lateral distance between an edge of the mask and an edge of the isolation region. The first oxide is at least partially removed beneath the planar area with an oxide etch to expose a top portion of the defect. The top portion of the defect is removed with a semiconductor etch. After removing the top portion of the defect, the trench is at least partially filled with a second oxide. A field plate of a split-gate transistor is formed over the STI.

Abstract: Semiconductor arrangements and methods of manufacturing the same. The semiconductor arrangement may include: a substrate including a base substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer; first and second fin structures formed on the substrate and extending in the same straight line, each of the first and second fin structures including at least portions of the second semiconductor layer; a first isolation part formed around the first and second fin structures on opposite sides of the straight line; first and second FinFETs formed on the substrate based on the first and second fin structures respectively; and a second isolation part between the first and second fin structures and intersecting the first and second fin structures to isolate the first and second fin structures from each other.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A patterned mask layer is formed on a semiconductor substrate. An isolation trench is formed in the semiconductor substrate by removing a part of the semiconductor substrate. A liner layer is conformally formed on an inner sidewall of the isolation trench. An implantation process is performed to the liner layer. The implantation process includes a noble gas implantation process. An isolation structure is at least partially formed in the isolation trench after the implantation process. An etching process is performed to remove the patterned mask layer after forming the isolation structure and expose a top surface of the semiconductor substrate. A part of the liner layer formed on the inner sidewall of the isolation trench is removed by the etching process. The implantation process is configured to modify the etch rate of the liner layer in the etching process.

Abstract: The present disclosure provides a method for preparing a semiconductor structure. The method includes the following steps. A substrate including a conductive layer formed thereon is provided. The conductive layer is patterned to form a plurality of conductive patterns extending along a first direction. A cap layer is conformally formed to cover the plurality of conductive patterns. A patterned hard mask is formed over the cap layer. The plurality of conductive patterns are etched through the patterned hard mask to form a plurality of conductive islands. In some embodiments, the plurality of conductive islands are separated from each other by a plurality of first gaps along the first direction. In some embodiments, the plurality of conductive islands are separated from each other by the cap layer and a plurality of second gaps along a second direction that is different from the first direction.