Variable threshold trench IGBT with offset emitter contacts
A trench type IGBT as disclosed herein includes a plurality of channel regions having one threshold voltage for the normal operation of the device and a plurality of channel regions having a threshold voltage higher than the threshold voltage for the normal operation of the device.
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The present application is based on and claims priority to U.S. Provisional Patent Application Ser. No. 60/999,240, filed on Oct. 17, 2007 and entitled VARIABLE THRESHOLD TRENCH IGBT WITH OFFSET EMITTER CONTACTS, the entire disclosure of which is hereby incorporated by reference.
FIELD OF INVENTIONThe present invention relates to a technique for designing and fabricating a trench IGBT (insulated gate bipolar transistor) to increase device robustness in motor drive inverters among other applications and an IGBT fabricated according to the method.
BACKGROUND AND SUMMARY OF THE INVENTIONIn industrial motor drive applications, an IGBT with a long short-circuit withstand time (SCSOA) is required. The withstand time represents how long the IGBT can stay functional and be turned off after encountering a motor fault condition where the IGBT conducts under full bus voltage (collector-emitter voltage). The withstand time is required for the driver to detect and locate the failure and turn off the system without further damage.
1) increase in silicon wafer thickness to increase over thermal mass; and/or
2) saturation current reduction.
1) SCSOA decreases with higher voltage;
2) SCSOA decreases with higher saturation current.
IGBT saturation current is highly dependent on the gate drive voltage as well as the overall MOS channel density. It should be noted that
1) saturation current increases with higher gate drive;
2) saturation current increases with higher channel density.
Channel density is inversely proportional to the cell pitch of the design. Where cell pitch is defined as the distance from one trench to the next. The wider the cell pitch, the lower the channel density and hence the lower the saturation current.
In today's motor drive applications, on-state saturation voltage reduction is as important as switching loss reduction. Methods to lower on-state saturation voltage drop include,
1) enhancement implant—increase in base drive electron injection efficiency;
2) deeper trenches—decrease in accumulation layer resistance at the tip of the trench;
3) wafer thinning—decrease in drift region resistance.
Large SCSOA demands wider cell pitch. Forward bias breakdown requires narrow cell pitch.
In order to achieve the desired channel density and breakdown voltage, narrow cell pitch is needed to reduce field crowding in which only a portion of the channels are conducting. One method for obtaining a desirable combination of channel density and breakdown voltage is shorting every other trench poly gate to emitter. Shorting gate to emitter eliminates gate drive completely for specific trenches, effectively reducing the overall channel density of the device while maintaining a narrow cell pitch to achieve the desired breakdown voltage. A structure using the latter method has been published in ISPSD 2006 by Mitsubishi, which has been defined as a damping trench for eliminating switching oscillations.
According to the present invention the saturation current of the IGBT is reduced in a unique manner to achieve the desired SCSOA. Specifically, according to the present invention, the threshold voltage of the channel at some of the trenches (e.g. every other trench) is increased.
In an IGBT (e.g. an N channel IGBT), P+ emitter contact regions are used to enhance parasitic thyristor latch-up. Such contact regions are formed in the base region and are higher in dosage (i.e. lower resistivity) compared to the P type base region in which the N channels are formed. A method according to the present invention allows the contact implant to contaminate some of the channel regions to increase the threshold voltage thereof For example, by decreasing contact to trench spacing in the mask used for the emitter contact implant the emitter contacts can be selectively offset and asymmetrically positioned relative to, for example, two opposing trenches. As a result, the channel region adjacent one trench can have a higher dopant concentration and thus a higher threshold voltage.
Referring to
Semiconductor device 10 also includes high conductivity emitter contact regions 24 of the first conductivity type which extend to a predetermined depth into base region 14. Emitter contact regions 24 have a lower resistivity (higher dopant dosage) than base region 14. Semiconductor device 10 further includes emitter contact 26, which is in electrical contact with high conductivity emitter contact regions 24 and emitter regions 16, and collector contact 30. Collector contact 30 is in direct electrical contact with conductivity modulating region 12, which is of the first conductivity type. Buffer region 13, which is of the same conductivity type as, but higher concentration than the drift region 11 is disposed between drift region 11 and conductivity modulating region 30. Conductivity modulating region 12 injects carriers into the drift region which results in improving the overall conductivity of the device during operation. Buffer region 13 improves the turn-off speed of the device by reducing the injection rate of the carriers into the drift region and increasing the recombination rate during a switching cycle.
Conductive gate material 22 in each trench 18 is electrically isolated from emitter contact 26 by a respective insulation plug 28. Conductive gate material 22 in each trench is electrically connected to a gate contact (not shown) such that the application of an appropriate bias to the gate contact will cause inversion in those portions of base region 14 adjacent to trenches 18 (channel regions) to enable conduction between emitter contact 26 and collector contact 30.
Semiconductive body 5 in the embodiment shown by
In an IGBT according to the present invention, invertible channel regions in the base region 14 adjacent trenches 18 can be selectively doped to have different threshold voltages. Thus, a channel region 10′ is a regular channel (i.e. a channel meant for conduction during ordinary operation of the device) and can have a threshold voltage which is selected for ordinary device switching operation (i.e. device threshold voltage), and channel region 12′ on the right is a high threshold channel region.
In the preferred embodiment, to obtain channel region 12′, emitter contact region 24 is asymmetically positioned relative to two opposing trenches 18 such that it is closer to one trench 18 than the other trench. As a result, emitter contact 24 encroaches into what normally would be a regular channel region 10′ and increase the concentration of the dopants therein. Consequently, the threshold voltage of channel region 12′ is higher than channel region 10′. Thus, by selectively increasing the threshold voltage at some channel locations in the device the amount of current flowing through the channel is at a minimum, which effectively reduces the overall channel density.
A device according to the present invention can be implemented in a number of different ways. Thus, in one embodiment as illustrated by
In another embodiment as illustrated by
Referring to
Referring to
Additional embodiments may include channel regions of multiple threshold voltages. Thus, for example, different emitter contact region 24 (and emitter contact) to trench spacings would result in channel regions with different threshold voltages. As a result, a gradient of channel regions of different threshold voltages can be obtained in order to have better control over the current distribution within the die.
Referring now to
Thus, for example, after window 32 is opened dopants for forming emitter contact region 24 are implanted into base region 14 through window 32, and then driven to obtain a region 24, channel region 10′ of one threshold (e.g. device threshold), and channel region 12′ of another higher threshold according to the present invention. Thereafter, emitter metal contact is deposited by sputtering or the like to obtain a device according to the present invention. Thus, in a method for fabrication of a device according to the present invention, a channel having a high threshold voltage can be attained by decreasing trench to contact spacing in the masking design and purposely allowing contact implant dose to encroach into the channel region. Note that optionally, a recess 38 may be formed into base region 16 either prior to or after implantation of dopants to form emitter contact region 24 therein.
Thus, in a device according to the present invention a number of channel regions adjacent the trenches are configured to have high thresholds to effectively reduce overall channel density while maintaining the desired narrow cell pitch to meet breakdown;
Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims.
Claims
1. An IGBT comprising:
- a semiconductor body that includes a top surface and a bottom surface, and a drift region of one conductivity type;
- a base region of another conductivity type over said drift region;
- a plurality of trenches extending through said base region into said drift region, emitter regions adjacent said trenches; and
- an insulated gate electrode inside each of said trenches, wherein each trench includes a channel region adjacent a respective sidewall thereof which upon application of a respective threshold voltage can be converted to a channel connecting an adjacently disposed emitter region and said drift region, and wherein at least a first group of said channel regions requires a first threshold voltage and at least a second group of said channel regions requires a second threshold voltage, said first threshold voltage is a device threshold voltage and said first threshold voltage and said second threshold voltage have different magnitudes and the same polarity; and
- wherein threshold voltages are different for each of said plurality of trenches.
2. The IGBT of claim 1, wherein said second threshold voltage is greater than said first threshold voltage.
3. The IGBT of claim 1, wherein at least one of said trenches includes a channel region from said first group of said channels adjacent one sidewall thereof and a channel region from said second group of said channels adjacent another sidewall thereof.
4. The IGBT of claim 1, wherein at least one of said trenches includes a channel region from said second group of said channels adjacent one sidewall thereof and a channel region from said second group of said channels adjacent another sidewall thereof.
5. The IGBT of claim 1, wherein at least one of said trenches includes a channel region from said first group of said channels adjacent one sidewall thereof and a channel region from said second group of said channels adjacent another sidewall thereof and at least another one of said trenches includes a channel region from said second group of said channels adjacent one sidewall thereof and a channel region from said second group of said channels adjacent another sidewall thereof.
6. The IGBT of claim 1, further comprising a contact region of said another conductivity type and lower resistivity than said base region disposed between and asymmetrically positioned between at least two of said trenches, said contact region having a channel region of the first group of said channel region adjacent one side thereof, and a channel region from the second group of said channel region adjacent another side thereof.
7. The IGBT of claim 1, further comprising a contact region of said another conductivity type and lower resistivity than said base region positioned between at least two of said trenches, said contact region having a channel region of said second group of said channel region adjacent one side thereof, and a channel region from said second group of said channel region adjacent another side thereof.
8. A trench type IGBT comprising:
- a plurality of gate trenches extending through a base region of a first conductivity type into a drift region of a second conductivity type;
- a channel region extending along a sidewall of each of said plurality of gate trenches from a respective emitter region adjacent each gate trench to said drift region;
- wherein a threshold voltage required to form an inverted channel in said channel regions varies for channel regions adjoining the same gate trench and for channel regions adjoining adjacent gate trenches.
9. The IGBT of claim 8, wherein said channel regions comprise a first group of channel regions requiring a first threshold voltage and a second group of channel regions requiring a second threshold voltage, and wherein said first and second threshold voltages have different magnitudes and the same polarity.
10. The IGBT of claim 9, wherein at least one of said gate trenches has a sidewall adjacent a channel region of said first group of channel regions and a second sidewall adjacent a channel region of said second group of channel regions.
11. The IGBT of claim 9, wherein said first threshold voltage is a device voltage, and wherein at least one of said gate trenches has opposite sidewalls each adjacent a channel region of said second group of channel regions.
12. The IGBT of claim 9, further comprising a contact region of said first conductivity type and having lower resistivity than said base region disposed between at least two of said gate trenches, said contact region having a channel region of said first group of channel regions adjacent one side thereof, and a channel region of said second group of channel regions adjacent another side thereof.
13. The IGBT of claim 9, further comprising a contact region of said first conductivity type and having lower resistivity than said base region disposed between at least two of said trenches, said contact region having channel regions of said second group of channel regions adjacent opposite sides thereof.
14. The IGBT of claim 12, wherein said contact region is asymmetrically disposed between said at least two of said gate trenches.
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Type: Grant
Filed: Oct 16, 2008
Date of Patent: Nov 29, 2011
Patent Publication Number: 20090146177
Assignee: International Rectifier Corporation (El Segundo, CA)
Inventors: Chiu Ng (El Segundo, CA), Yuan-Heng Chao (San Jose, CA)
Primary Examiner: Matthew Landau
Assistant Examiner: Latanya N Crawford
Attorney: Farjami & Farjami LLP
Application Number: 12/252,684
International Classification: H01L 29/66 (20060101);