Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Abstract: A sputtering device includes at least: a vacuum container defining a vacuum space; a substrate holder installed rotatably in the vacuum space; a substrate installed on the substrate holder; a target for forming thin film on the substrate; and a rotatable sputtering cathode in which the target is installed. The sputtering cathode is slanted relative to the substrate, and a center of the target is eccentric to a rotation axis of the sputtering cathode.

Abstract: To provide a vertical substrate transfer apparatus and a film-forming apparatus capable of, regardless of a carrying position of a substrate, subjecting either surface thereof to film-formation, and capable of supporting and carrying the substrate without interfering with a non-film-forming surface. A film-forming apparatus (1) according to the present invention includes a carrier (15) giving support so that either surface of a substrate (W) is processable, a first position changing section (3) changing a carrying position of the carrier (15), and a carrying chamber (9) housing the carrier, whose position is changed therein and which carries the carrier to a film-forming chamber (10). With the above construction, it becomes possible to subject either surface to film-forming processing regardless of the carrying position of the substrate (W). Further, it becomes possible to change a film-forming surface (Wa) in the course of carrying the substrate (W).

Abstract: This invention presents a magnetic recording disk where an anisotropy-allowing layer to allow magnetic anisotropy to a magnetic recording layer is provided between a substrate and the magnetic recording layer. This invention also presents a magnetic-recording-disk manufacturing method comprising a step to prepare an anisotropy-allowing layer to allow magnetic anisotropy to a magnetic recording layer, prior to a step to prepare the magnetic recording layer. This invention also presents a magnetic-recording-disk manufacturing system comprising an anisotropy-allowing-layer preparation chamber, in which an anisotropy-allowing layer to allow magnetic anisotropy to a magnetic recording layer is prepared on a substrate, prior to preparation of the magnetic recording layer. In this invention, the anisotropy-allowing layer is made of; nitride of niobium, tantalum, niobium alloy or tantalum alloy, or nitride-including niobium, tantalum, niobium alloy or tantalum alloy.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: The invention relates to a vacuum coating installation with a transport system for planar substrates which are transported through a vacuum chamber. This transport system comprises several cylinders disposed in parallel. As the driving means for these cylinders one or several motors may be provided, which are located within or outside of the vacuum chamber. The coupling between the motor or the motors and the cylinders in any event takes place via magnet couplings. Since hereby no mechanical coupling established between the driving means and the cylinders, these can readily be separated from one another, which permits providing the cylinders, and with them the sputter cathodes, in a slide-in element which can be moved into and out of the vacuum chamber. If not every cylinder is provided with its own driving means, the cylinders, which are coupled with a driving means, can be connected via V-belts or the like with the other cylinders.

Abstract: The invention relates to a vacuum plasma generator for providing a plasma discharge (10) for treating work pieces (5) by way of a pulsed plasma process in a vacuum chamber (2). Said vacuum plasma generator comprises a generator output (9, 9?) having an AC mains supply (6a), an AC/DC mains rectifier system (6) for rectifying the AC mains voltage to a DC voltage, a filter capacitor (6b), a first stage as clocked DC/DC voltage converter (7) with means for adjusting the DC output voltage which produces an intermediate circuit voltage (Uz), comprising a controlled power switch (7a) which feeds the primary winding of a transformer (14) and the secondary winding of which is connected to a rectifier (15) and a downstream intermediate capacitor (12) and configures a floating transformer secondary circuit (23). Said secondary circuit is connected to a downstream second stage which is a pulse output stage (8) and is connected to the generator output (9, 9?).

Abstract: A sputter target assembly including vent grooves having a certain configuration so as to reduce target arcing during the physical vapor deposition of a film.

Abstract: A roll to roll, film forming system overcoming the shortcomings of current roll to roll processing is presented; The roll to roll enabled cartridge is loaded with a bolt of fresh flexible substrate. A skate couples with a cartridge, forms a seal with the cartridge's bottom aperture and drives the cartridge along a rail to an array of deposition heads. A head mates with the cartridge top forming a pressure seal around the variable area deposition aperture. The mating of the skate, cartridge and head form a pressure vessel wherein a film forming environment may be maintained. As the substrate advances past the deposition aperture a layer is formed, potentially from bolt end to bolt end. Device growth continues from one head to another, as grown device encapsulation seal inclusive, aperture environmental seals applied, labeled cartridge is routed to dock, skate returns to system start.

Abstract: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Abstract: A processing system includes a chamber. A plurality of processing stations in a center region in the chamber can be sequentially positioned when viewed in a first direction. The plurality of processing stations is configured to provide at least one processing step selected from the group consisting of thermal evaporation, thermal sublimation, sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), ion etching, or sputter etching. A plurality of substrates in the chamber can be sequentially positioned when viewed in the first direction. At least one of the plurality of substrate comprises a receiving surface configured to receive the at least one processing step from the plurality of processing stations.

Abstract: An electrolytic reactor including a conical recess of removable slices through which the electrolyte circulates towards a part to be coated under the action of a pump setting up forced circulation. The part is polarized to act as a cathode, facing a coaxial anode in the recess. This configuration leads to good electrolyte flow in front of the part, allowing accelerated deposit with a uniform thickness of the coating material, and dimensions of the chamber may be added.

Abstract: According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.

Abstract: A vacuum coating system for coating elongate substrates includes one or several coating sections and one or several pump sections, at lease one magnetron in an arrangement as a sputter-down-variant above the substrate which has a target surface opposite the upper side of the substrate and/or in an arrangement as a sputter-up-variant below the substrate which has a target surface opposite the lower side of the substrate, and a transport device. The aim is to form an inline coating system for the two lateral coatings of elongate substrates, wherein construction costs and space required are reduced. The aim is achieved by use of a transport device arranged in a divided manner on a drive plane and on a transport plane. In sputter-up-variants, the underside of a magnetron body containing the magnetron lies above the drive plane.

Abstract: The invention relates to a device for the targeted application of deposition material onto a substrate, especially for focusing the sputter flux onto a narrow angular range in a PVD-system. The invention is characterized in that the deposition material is directed through a filter structure (90) having several channel-shaped individual structures (60) onto said substrate (30), whereby the streams of material are limited to a narrow angle range.

Abstract: The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.

Abstract: A thin-film deposition apparatus includes a reaction chamber, a substrate transfer chamber, a susceptor having a radially-extending step portion, a ring-shaped separation wall for separating the reaction chamber and the substrate transfer chamber at a processing position where the susceptor is positioned inside the ring-shaped separation wall, and a conductive sealing member which is interposed between the radially-extending step portion and the separation wall to seal the reaction chamber from the substrate transfer chamber when the susceptor is at a processing position.

Abstract: A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.

Abstract: A dual chamber apparatus including a first chamber and a second chamber which is configured to be coupled to the first chamber at an interface. Each of the first chamber and the second chamber has a transfer opening located at the interface. An insulating plate is located on one of the first chamber and the second chamber at the interface and is configured to have a low thermal conductivity such that the first chamber and the second chamber can be independently controlled at different temperatures when the first chamber and the second chamber are coupled together. Additionally, the apparatus may include an alignment device and/or a fastening device for fastening the first chamber to the second chamber. In embodiments, the insulating plate may be constructed of Teflon. Further, the first chamber may be a chemical oxide removal treatment chamber and the second chamber may be a heat treatment chamber.

Abstract: A coating apparatus deposits a first coating (single or multi-layered) onto a first side of a substrate (e.g., glass substrate) passing through the apparatus, and a second coating (single or multi-layered) onto the other or second side of the substrate. In certain example embodiments, the first coating may be deposited via sputtering while the second coating is deposited via ion beam deposition. In such a manner, it is possible to coat both sides of the substrate in a single apparatus in an efficient manner. In other embodiments, the coating apparatus may sputter a coating onto a first side of the substrate and ion beam mill at least one surface of the substrate as the substrate passes through the coating apparatus. In other embodiments of this invention, a dual mode chamber may be provided that is adapted to receive a removable ion beam module on one side of a substrate and a removable sputtering module on the other side of the substrate.

Abstract: A process is disclosed for manufacturing coated substantially plane workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile. The system and process can be used to deposit defined layer thickness distribution profiles on substrates in a reactive coating.

Abstract: Systems and methods are described for the synthesis of films, coatings or layers. An apparatus includes a first holder; a second holder coupled to the first holder; a linkage coupled to the first holder and the second holder to move the first holder relative to the second holder; a reusable tool coupled to the first holder, the reusable tool including a raised patterned surface; and a release layer coupled to the raised patterned surface of the reusable tool.

Abstract: The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out the film formation and the surface processing. Another object of this invention is to provide a small sputtering apparatus for forming a multilayer film as compared with prior art apparatus. A sputtering apparatus of this invention comprises a main shaft around which at least one target and at least one surface processing mechanism are installed, a substrate holder holding a substrate or a plurality of substrates arranged facing the target and the surface processing mechanism, and a rotation mechanism to rotate the main shaft or the substrate holder.

Abstract: The invention relates to a drive mechanism for a vacuum treatment apparatus by which substrate holders can be transported around an axis (A—A) from an entrance airlock to an exit airlock. A stationary supporting column (1) is disposed in the center and on it a rotatory drive chamber (6) is borne which has control rods (9) for a rotation and a radial displacement of the substrate holders. In the rotatory drive chamber (6), a motor (4) and rotatory displacement drives for the control rods (9) are arranged on the supporting column (1), the control rods being in active connection each with a corresponding substrate holder.

Abstract: The invention provides a method and apparatus for producing uniform, isotropic stresses in a sputtered film. In the presently preferred embodiment, a new sputtering geometry and a new domain of transport speed are presented, which together allow the achievement of the maximum stress that the film material can hold while avoiding X-Y stress anisotropy and avoiding stress non-uniformity across the substrate.

Abstract: An object of the invention is to provide a method of sputtering and a device for sputtering which can improve distribution of a film's thickness and coverage distribution improve. The device for sputtering includes at least a substrate, a substrate holder which holds the substrate, a target for forming a thin film on the substrate, a sputtering cathode in which the target is installed, a means for sputtering which makes materials of the target sputter to the substrate. Sputtering is carried out by making the substrate holder rotate and making a sputter cathode unit comprising at least one sputtering cathode move along an arc over the rotating substrate held on the substrate holder.

Abstract: A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage.

Abstract: A Vacuum transport chamber for disk-shaped substrates, has a base plate structure has an interior surface which borders an interior of the chamber on one side thereof. A covering structure is situated parallel and opposite an interior surface of the base plate structure. The structure has at least two substrate passage openings which are adapted to a substrate disk surface. A transport device which is rotationally drivingly movable about a rotation axis perpendicular to the base plate structure. At least one substrate receiving device is brought into alignment with a respective one of the openings. A controlled sealing arrangement establishes an edge of at least one of the openings with the substrate holding device brought into alignment therewith and a substrate provided thereon.

Abstract: The present invention is directed at least in part to methods and apparatus for optically monitoring selected optical characteristics of coatings formed on substrates during the deposition process and controlling the deposition process responsive thereto. In one aspect, the system includes a retroreflector for reflecting an electromagnetic beam transmitted by the coating and substrate back through the substrate and coating before selected properties of the retroreflected beam are measured. The system and method improve the signal to noise properties of the measured beam. The present invention may be used in systems for coating one or an array of substrates, and is particularly suitable for deposition processes where the substrates are translated past the sources of material to be deposited, and wherein the angle of incidence of a monitor beam on the substrate changes as the substrate translates past the beam source.

Abstract: A focus ring assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a focus ring having one or more wear indicators for determining the lifetime of the focus ring, wherein the coupling of the focus ring to the substrate holder facilitates auto-centering of the focus ring in the plasma processing system. For example, a centering ring mounted on the substrate holder can comprise a centering feature configured to couple with a mating feature on the focus ring.

Abstract: A facing targets sputtering device for semiconductor fabrication includes an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and a back-bias power supply coupled to the substrate holder.

Abstract: A method and apparatus for processing a thin film on a substrate. The method involves locating the substrate in a first rotational position a location opposed to a process station. The process station has a first axis and is arranged for processing the substrate about that axis. The substrate location is symmetrical about a second axis parallel to but offset from the first axis. The substrate is rotated about an axis generally orthogonal and passing through the wafer location to a second rotational position after an initial process and further processing takes place when the substrate is in the second rotational position.

Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.

Abstract: An exemplary configurable vacuum system is provided for use in coating or plating that provides the capability and versatility to handle substrates of significantly different shapes and sizes. The configurable vacuum system includes a vacuum table assembly, a mechanical drive, an electrical feed through, a filament, and a vacuum chamber. The vacuum table assembly may include a support frame, a sliding means, such as a roller or rollers, an insulated surface, and a platform operable to rotate and support the substrate. The mechanical drive is operable to rotate the platform, the electrical feed through provides an electrical signal to the substrate, and the filament is positioned relative the substrate. The vacuum chamber includes a main opening, an internal volume, and a receiving means, such as a railing or member, operable to receive and support the vacuum table assembly within the internal volume of the vacuum chamber and through the sliding means of the vacuum table assembly.

Abstract: A sputtering chamber system and method uses at least one sputtering source with a new sputter surface at least approximately symmetrical with respect to a central axis. A substrate carrier is arranged to be drivingly rotatable about a substrate carrier axis. The central axis and the substrate carrier axis are oblique with respect to one another, and the sputtering source is a magnetron sputtering source. The new sputter surface is substantially rotationally symmetrical with respect to the central axis, with the central axis and the substrate carrier axis intersecting at least approximately. With respect to an angle ? between the central axis and the substrate carrier axis, 30°???60°, preferably 40°???55°, particularly preferably 43°???50°, particularly ??45°.

Abstract: An in-line sputtering system for depositing a thin film on a substrate includes a buffer heating module, an entry transfer module adjacent to the buffer heating module and having an expedited conveyor device for moving the substrate therein and a first sputtering module for depositing the thin film on the substrate, which is adjacent to the entry transfer module. The entry transfer module serves as a buffer zone which mitigates fluctuations in temperature and pressure in the first sputtering module when the substrate is unloaded from the buffer heating module. The substrate in the entry transfer module is moved by the expedited conveyor device at a speed greater than that in the first sputtering module.

Abstract: A substrate processing apparatus includes a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.

Abstract: A thin-film solar cell including a transparent electrode layer, a semiconductor photovoltaic conversion layer, a rear transparent electrode layer and a rear reflective metal layer, said layers being formed in this order on a transparent substrate, wherein the rear transparent electrode has a two-layer structure of an ITO or ZnO:Ga layer and a ZnO:Al layer formed in this order on the semiconductor photovoltaic conversion layer.

Abstract: A vacuum chamber for transporting at least one workpiece has two or more openings defining respective opening areas for treating or handling the at least one workpiece. A transport device is arranged relative to the openings and includes a drive shaft rotatable around a drive shaft rotational axis. Two or more conveyors transport at least one workpiece. A linear driver is operationally independent to linearly move respective ones of the two or more conveyors relative to the drive shaft, with a drive component in a radial direction relative to the axis. An obstructing member is provided for closing the openings when one of the conveyors is positioned adjacent to the openings by rotating the transport device and is moved by the linear drive towards the opening.

Abstract: A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.

Abstract: A system for the plasma treatment of parts. The system includes a chamber base sealingly engageable with a reaction chamber to form a treatment chamber and a lifting device operable to lift the reaction chamber from the chamber base. A transfer mechanism is operable to transfer parts along a guide to multiple treatment positions within the treatment chamber when the reaction chamber is disengaged from the chamber base. An electronic control system controls the transfer mechanism for transferring the plurality of parts to the treatment positions. The parts are treated with a plasma produced within the treatment chamber by a plasma-generating device.

Abstract: Systems and methods are described for synthesis of films, coatings or layers. An apparatus includes a first holder; a second holder coupled to the first holder; a linkage coupled to the first holder and the second holder to move the first holder relative to the second holder; a reusable tool coupled to the first holder, the reusable tool including a raised patterned surface; and a release layer coupled to the raised patterned surface of the reusable tool.

Abstract: A vacuum treatment system has a vacuum treatment chamber, has an ACTUAL value sensor to establish a treatment atmosphere in the form of a regulating element of a control circuit. The treatment atmosphere in the treatment area is modulated according to a defined profile as a function of the workpiece carrier position. The system and process deposits defined layer thickness distribution profiles on substrates in a reactive coating.

Abstract: The prevent invention improves the film thickness distribution in the direction of revolution of substrates by a simple manner in a method for forming coating films, wherein a evaporating source 3 is disposed at a predetermined distance from substrates 2, and when a coating film material is applied from the evaporating source 3 onto the substrate surfaces while revolving the substrates 2, coating films are formed on the substrate surfaces in a condition where the radius of curvature of the substrates 2 obtained by bending the substrates 2 within the elasticity range is made equal to the radius of revolution of the substrates 2.

Abstract: The disclosure herein relates to a high throughput system for thin film deposition on substrates which can be used in applications such as optical disks, and in particular DVD disks, chip-scale packaging, and plastic based display, for example. An apparatus useful in the production of products of the kind described above includes: (a) a continuously moving web for simultaneously transporting a number of substrates to which a thin film of material is to be applied, wherein the moving web is a roll-to-roll moving web; (b) a central processing chamber which is maintained under vacuum and through which at least a portion of said continuously moving web travels; and, (c) at least one deposition device which is located within said central processing chamber, where at least a portion of said continuously moving web is exposed to material deposited from said deposition device. Typically the deposition device is a magnetron sputtering device.

Abstract: A non-arcing bias rail assembly for supplying an electrical bias potential to a moving workpiece/substrate holder, comprising an elongated metal strip adapted for mounting along a wall of a workpiece/substrate treatment apparatus and having a surface bounded by first and second opposed, laterally extending side edges; a bracket comprised of an electrically insulating material and including a first portion mounted on the surface adjacent to and extending along a portion of the first side edge, and a second portion forming an upstanding wall extending perpendicularly from the first portion and including a surface facing the second side edge of the metal strip; an electrically conductive bias contact spring assembly mounted on the upstanding wall of the bracket facing the second side edge; and electrically insulated wire means electrically connected to the bias contact spring assembly for supplying an electrical bias potential.