Abstract: An in-line sputtering apparatus includes a deposition chamber, a target installed inside the deposition chamber, a substrate holder to hold a substrate, a substrate holder transferring mechanism which transfers the substrate holder relative to the target such that a thin film made of a material of the target that is formed on the substrate held by the substrate holder, first and second thickness distribution correcting members and a plate driving mechanism. The first and second thickness distribution correcting members are provided above the target, and each of the first and second thickness distribution correcting members has a plurality of movable plates. The plate driving mechanism is linked to the first and second thickness distribution correcting members and moves the corresponding movable plates of the first and second distribution correcting plates, symmetrically.

Abstract: A sputter coating apparatus includes at least a first sputter coating line and a second sputter coating line. The first and second sputter coating lines may be operated in parallel with one another in certain embodiments in order to independently form coating systems and respective coated articles. However, the two coating lines may also be utilized so as to operate in series with one another to form a coated article. In the latter case, a transition zone is provided between an end of the first line and an end of the second line so as to selectively couple an output of the first line to an input of the second line when it is desired to utilize the two sputter coating lines in series with one another. In such a manner, it is possible to avoid many of the inefficiencies associated with conventional sputter coating apparatuses and processes.

Abstract: A sputtering device is provided in which at least one target is sputtered by sputtering discharge to produce a film of target material on at least the first surface of a substrate. The sputtering device has a principal rotating mechanism that rotates the at least one target about an axis of revolution coaxial with the central axis of the substrate. The target is positioned offset from and circumferential to the central axis of the substrate coaxial with the axis of revolution. A magnet mechanism for magnetron discharge of the sputtering discharge forms a magnetic field asymmetrical to a central axis of the target and is rotated by an auxiliary rotating mechanism. The principal rotating mechanism integrates rotation of the targets with the magnet mechanism.

Abstract: A process and apparatus for coating small particles and fibers. The process involves agitation by vibrating or tumbling the particles or fibers to promote coating uniformly, removing adsorbed gases and static charges from the particles or fibers by an initial plasma cleaning, and coating the particles or fibers with one or more coatings, a first coating being an adhesion coating, and with subsequent coatings being deposited in-situ to prevent contamination at layer interfaces. The first coating is of an adhesion forming element (i.e. W, Zr, Re, Cr, Ti) of a 100-10,000 Å thickness and the second coating or final coating of a multiple (0.1-10 microns) being Cu or Ag, for example for brazing processes, or other desired materials that defines the new surface related properties of the particles. An essential feature of the coating process is the capability to deposit in-situ without interruption to prevent the formation of a contaminated interface that could adversely affect the coating adhesion.

Abstract: A linear drive assembly for moving a body associated with processing a substrate is disclosed. The linear drive assembly includes a first gear and a second gear, which is operatively engaged with the first gear. The linear drive assembly further includes a positioning member having a first portion and a second portion. The first portion is movably coupled to the second gear in a linear direction, and the second portion is fixed to a component associated with processing a substrate.

Abstract: A cross flow system for metalizing compact discs, capable of being interposed in-line in the production of the compact discs after premastering, mastering, electro-forming, and molding includes a vacuum chamber having diametrically opposed vacuum locks and multiple metalization sources in the form of magnetrons, with a preferred cross flow including the introduction of a disc to be metalized through one lock and the exit of the metalized disc through the diametrically opposite lock. The double vacuum lock diametrically opposed cross flow system eliminates the problems of throughput limitations, high rate deposition, substrate pitting, and software complexity due to indexing which makes prior systems both costly and inefficient. The system also permits processing of more than one substrate or compact disc title such that multiple titled compact discs can be processed simultaneously.

Abstract: A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction. The magnetic film forming system comprises a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable with the substrate held, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Abstract: An apparatus for forming a multilayer film on a substrate surface comprises a multi-target sputtering source having a planar end face adapted for rotation about a central axis and including at least a pair of independently operable planar magnetron cathodes having sputtering targets composed of different materials, and a substrate mounting means for providing a stationary substrate in spaced-apart, facing relation to the sputtering source. According to the inventive method, the multi-target source is rotated about its central axis while the substrate is maintained stationary, thereby depositing a multi-layer film stack on the substrate. The invention finds particular utility in the formation of superlattice structures usable as recording medium layers in the fabrication of magnetic and magneto-optical (MO) data/information storage and retrieval media.

Abstract: At least an effective region of the face of a panel of a cathode ray tube is held within a vacuum chamber. After the vacuum chamber is hermetically sealed from the outside of the vacuum chamber, a thin film is formed on the face of the panel by using a film-forming means.

Abstract: A vacuum treatment system has an outer housing which defines a substantially cylindrical inner wall around an axis. At least two openings are provided for treating or conveying-through a respective workpiece arranged along at least one great circle of the cylindrical inner wall. One treatment, conveying or lock chamber respectively, is connected with the at least two openings. An inner housing defines a cylindrical outer wall and, together with the substantially cylindrical inner wall, forms a substantially cylindrical ring gap. A workpiece carrier carousel is rotationally drivable about the axis in the ring gap. A feed device comprising driving devices is movable in a radially driven manner on the inner housing and is aligned with the at least two openings. The driving devices act into the ring gap, and each of the driving devices has a separate drive.

Abstract: A flexible, modular thin film deposition machine comprises a number of batch process stations which define a batch process path. At least one of the batch process stations is a thin film deposition station including a serial deposition chamber and an inter-chamber disk transfer mechanism. The disks move in batches along the process path, being individually processed only at the deposition station. Within the serial sputtering chambers of at least one deposition station there is at most partial environmental separation, whereas between different deposition stations the separation is complete. The resulting simplification of the transport mechanism provides for a high throughput rate while simultaneously minimizing contamination of individual thin film layers.

Abstract: A sputtering apparatus for forming a sputtered film on a substrate held on a substrate holder in a vacuum chamber includes a target, a deposition preventing plate provided between the target and the substrate holder, a substrate holder carrying mechanism, and a moving mechanism for moving the substrate holder carrying mechanism to change a distance between the substrate and the deposition preventing plate.

Abstract: A method and apparatus for sputter deposition of metal alloys with improved compositional uniformity is provided, wherein a first, narrow width target is provided with a sputtering surface comprised of a metal alloy including metal elements having different angular distributions of sputtered atoms, and a wider width substrate having a deposition surface is moved past the sputtering surface, whereby the deposition surface traverses all arrival angles of the sputtered atoms thereby compensating for the different angular distributions of the sputtered atoms. The inventive methodology finds particular utility in the manufacture of magnetic and magneto-optical (MO) recording media.

Abstract: A method and system for producing thin film alloy by a sputtering deposition process comprising using a circle-shaped aperture interposed between the target and substrate of a sputtering deposition system and establishing a rotating/oscillating relationship between the substrate and the aperture.

Abstract: This invention provides a method of forming a metal wiring film excellent in EM resistance and low electric resistance. In a method of forming a wiring structure by filming and covering the surface of the insulating film of a substrate to be treated having a hole or groove formed thereon with a metallic material such as copper, aluminum, silver or the like, thereby filling the hole or groove inner part with the metallic material to form a wiring structure, the substrate to be treated is exposed to a high temperature under a high-pressure gas atmosphere after the continuous filming and covering with the metallic material along the inner surface profile of the hole or groove, whereby the surface diffusion phenomenon of the metallic material is promoted to reform the metal film into a film structure as the surface area of the metal film is minimized.

Abstract: A sputtering apparatus includes a vacuum housing, a substrate holder disposed in the vacuum housing for holding a substrate thereon, and a composite sputtering cathode assembly disposed in the vacuum housing. The composite sputtering cathode assembly has a plurality of targets and a plurality of shields each disposed between adjacent ones of the targets. The targets are disposed in confronting relation to the substrate held on the substrate holder. Those sputtering particles expelled from the targets which are directed obliquely to the substrate hit the shields and do not reach the substrate. Only those sputtering particles which are directed substantially perpendicularly to the substrate are applied to the substrate. The distribution of film thicknesses on the substrate is made uniform when the substrate and the targets rotate relatively to each other.

Abstract: A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction. The magnetic film forming system comprises a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable with the substrate held, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Abstract: The present invention is drawn to an apparatus for forming a thin film. The apparatus includes a vacuum chamber; a vacuum apparatus connected to the vacuum chamber; a holder placed in the vacuum chamber, which holder holds a substrate and is rotated by means of a rotating mechanism; a plasma CVD apparatus; and a sputtering apparatus, wherein the plasma CVD apparatus and the sputtering apparatus are placed in a single vacuum chamber and a thin film having an medium refractive index is formed on the substrate held by the holder, by means of the plasma CVD apparatus and the sputtering apparatus. The method making use of such an apparatus is also disclosed.

Abstract: The invention relates to the deposition of material onto surfaces of a substrate, typically respective concave and convex surfaces and provides a system whereby the substrates are held in a mutually sealed relationship by a carrier during the deposition of material onto respective surfaces thereby preventing or minimising the problem of lack of adhesion of the material on the surfaces

Abstract: This invention provides a process for coating super fine ion particles of multiple elements on the surface of a micro router substrate, characteristics of which is that the coating step is operated under low temperatures and vacuums. First, raw micro routers are cleaned by electron beams under atmospheric pressures and room temperatures, then the raw micro routers are transferred into a vacuum environment, and increase the temperature of the environment. Next, the surface of the micro router is cleaned by ions, then proceed with the coating process. An arc source is used to bombard cations from a target, while a filtration net is used to get filtrate of small cation particles. Then, an ion assistant device is operated to further fine the filtrated particles, therefore only super fine ion particles are coated on the surface of the micro router substrates.

Abstract: The present invention relates to an artificial latticed multi-layer film deposition apparatus for depositing on a substrate a gigantic magneto-resistive effect film (GMR film) having an artificial lattice structure formed of magnetic metal films and non-magnetic metal films alternately laminated one over the other and its object is to provide the artificial latticed multi-layer film deposition apparatus to enable easy and secure deposition of an artificial latticed multi-layer film having GMR characteristics.

Abstract: There may be used a film-forming apparatus having a substrate 4 that is rotatable around the center of one rotating axis 10 in the vertical direction situated in an inner cylinder 12, and a plurality (four in FIG. 2) of target units each comprising the pair of targets 2A, 2B (2B is under 2A serially arranged in the vertical direction inside an outer cylinder 13 opposite the surface 4a of the substrate 4, which are arranged in parallel in the circumferential direction of the inner wall of the outer cylinder 13. By employing a method whereby voltage is applied while alternately reversing the polarity to each of the targets 2A, 2B, it is possible to form a coating on the surface of a substrate by glow discharge sputtering, to accomplish destaticizing while the sputtering can be carried out using a small in-line or bell jar apparatus with small space.

Abstract: Deposition apparatus incorporating either a single or multiple filtered cathodic arc (FCA) source for depositing coatings such as tetrahedral amorphous carbon (TAC); metal oxides; compounds and alloys of such materials onto various types of substrates, such as metals semiconductors, plastics ceramics and glasses. Substrates are moved through the plasma beam(s) of the FCA source(s) and beam scanning increases deposition area. Macroparticles are filtered by a double bend filter duct.

Abstract: An ion beam sputtering system having a chamber, an ion beam source, multiple targets, a shutter, and a substrate stage for securely holding a wafer substrate during the ion beam sputtered deposition process in the chamber. The substrate stage is made to tilt about its vertical axis such that the flux from the targets hit the wafer substrate at a non-normal angle resulting in improved physical, electrical and magnetic properties as well as the thickness uniformity of the thin films deposited on the substrate in the ion beam sputtering system.

Abstract: A robotic arm assembly in a transport module is expansible to have an effector at its end receive a substrate in a cassette module and is then contracted and rotated with the effector to have the effector face a process module. Planets on a turntable in the process module are rotatable on first parallel axes. The turntable is rotatable on a second axis parallel to the first axes to move successive planets to a position facing the effector. At this position, an alignment assembly is aligned with, but axially displaced from, one of the planets. This assembly is moved axially into coupled relationship with such planet and then rotated to a position aligning the substrate on the effector axially with such planet when the arm assembly is expanded. A lifter assembly aligned with, and initially displaced from, such planet is moved axially to lift the substrate from the effector. The arm assembly is then contracted, rotated with the effector and expanded to receive the next cassette module substrate.

Abstract: Disclosed is a vacuum film forming/processing apparatus and method which is hardly influenced by dusts and contamination on a substrate and moreover has a reduced exhaust volume. A substrate chamber for housing and holding a substrate and target chambers for housing and holding a target and an etching chamber are moved relatively. Any one of the target chambers, etching chamber and the substrate chamber are selectively coupled and communicated with each other, thereby creating a film forming chamber. In the film forming chamber, a film forming process to the substrate is performed and a multilayered film is formed. A conveying chamber which is conventionally provided is consequently made unnecessary. A problem of dusts and contamination occurring when the substrate passes through the conveying chamber is eliminated, so that the film quality and its stability are improved.

Abstract: A cylindrical carriage sputtering system for disk, wafer, and flat panel substrates (20) comprising a cylindrical shaped vacuum sealed passageway formed by two concentric inner (11) and outer hollow cylinders (12), along with a top and a bottom sealing flange (13, 14). A central hollow cylinder (15), disposed between the inner (11) and outer cylinder (12), includes substrate-carrying openings and serves as a cylindrical carriage which substantially fills the sealed passageway and is rotatable in predetermined steps. Novel substrate processing devices (16) for deposition, heating, and cooling are attached around the circumference of the inner and outer cylindrical walls. Vacuum pumps are located between substrate processing devices (16). The openings in the cylindrical carriage are each fitted with thermally isolated substrate holders (19) for supporting a multiplicity of substrates (20).

Abstract: An ion beam sputtering target assembly has six sputter targets arranged in pairs on three paddles and disposed upon the circumference of a circular holder. The circular holder can be rotated about its axis in such a way as to bring any one of the target pairs to be exposed to the sputtering ion beam to deposit a film on substrate. The paddle is rotated to bring a desired target in the pair into position for sputtering. An alternative embodiment is provided with an enlarged region which allows one of the target paddles to be rotated about its axis while that target paddle is in an inactive, non-sputtering rotary position.

Abstract: An apparatus for applying material by cathodic arc vapor deposition to a substrate is provided which includes a vessel, a disk-shaped cathode, a platter for supporting the substrate, apparatus for maintaining a vacuum in the vessel, and apparatus for selectively sustaining an arc of electrical energy between the cathode and an anode. The disk-shaped cathode has a first end surface, a second end surface, and an evaporative surface extending between the first and second end surfaces, and the cathode is mounted on a pedestal positioned inside the vessel. The platter has a slot for receiving the pedestal, thereby enabling the platter to be movable into and out of the vessel.

Abstract: A sputtering device enabling a small incident angle. A plurality of shield plates provided with holes at the same positions as targets are arranged in a vacuum chamber. Sputtering particles ejected diagonally from the targets 51-59 become attached to the shield plates 21-23 and only particles ejected vertically reach the surface of a substrate 12. As a result, it is possible to uniformly form a thin film inside microscopic holes of high aspect ratio. If sputtering gas is introduced close to the targets 51-59, reactant gas is introduced close to the substrate 12 and evacuation carried out close to the substrate 12, reactant gas does not reach the targets 51-59 side. Consequently, it is possible to prevent deterioration of the surfaces of the targets 51-59.

Abstract: A mask is placed over a center portion of a deposition source to limit angle of the flux from the source. A substrate or device with a vertical surface (referenced to a major surface of the substrate or device) is rotated past the deposition source to coat the vertical surface with material from the source. In a particular embodiment, the source is a gold sputtering target and a mirror is formed on a vertical surface of a MEMS structure having a depth of about 70-75 microns and a set-back of about 200-250 microns by sputtering about 1000 Angstroms of gold onto the vertical surface.

Abstract: A device for coating a disk-like substrate (3,3′, . . . ) with the aid of cathodic sputtering, having an essentially cylindrical transport chamber (7) and with a vacuum pump (8) connected to the transport chamber (7) and with an opening (9) that can be closed off by a plate (16) for inserting and removing the substrates (3,3′. . .

Abstract: An elongate emitter is used as a cathode to coat material onto a cylindrical workpiece by magnetron sputterinig. Where the inside surface of the workpiece is coated, the workpiece itself is used as the vacuum sputtering chamber. The overlap between the plasma field and the magnetic field creates a coating zone which is moved along the length of the workpiece to evenly coat the workpicce.

Abstract: A device for coating plate-shaped substrates by using cathode sputtering has several process chambers one after the other, each of which are bordered on the top by a chamber roof having in each case an opening. In this opening, which is covered at the top by a cathode arrangement, a frame is inserted. Screens and coolant lines of the process chamber are provided on the frame that can slide upwards out of the opening, projects into the process chamber, and is supported inside the opening of the chamber roof. A top of the cathode arrangement projects over the frame on the sides and is supported directly on the chamber roof so it seals it.

Abstract: Antireflection films are coated on the both sides of an optical lens by sputtering in a sputtering system. In a vacuum processing chamber (22) for performing the sputtering, a plurality of optical lens base materials are placed transversely on a substrate holder (26). The holder (26) is set rotatably in a vacuum atmosphere. The optical lens base materials are embedded to holes (26a) formed in the holder (26), facing their concave surface up, by using ring-shaped holding tools (52, 152). The height of the ring-shaped holding tool (52) is larger than the height of the edge of the optical lens base material (11) within the limits of 2 mm when the thickness of the lens edge of the optical lens base material is large. Part of the ring-shaped holding tool (152) which is put together with the upper surface of the optical lens base material (111) is tapered when the thickness of the lens edge of the optical lens base material is small.

Abstract: A wafer processing system includes a plurality of evacuable housings connected in series to form a processing line, with a plurality isolation valves to separately isolate the housings. A track extends through the connected housings. At least one wafer carrier is moveable on the track, through the housings and along the processing line. The wafer carrier holds wafers in vertical orientation and also includes a plurality of magnets aligned along its bottom. Outside the housings, a plurality of magnetic drive units are aligned parallel with the track, with one drive unit per housing. Each drive unit includes a motor driven conveyor with a plurality of magnets mounted thereon which imposes magnetic fields inside the housing to magnetically couple with the magnets mounted on the carrier. When the motor driven conveyor moves the imposed magnetic fields, the magnetic coupling causes the wafer carrier to move.

Abstract: A method of applying a coating to a metallic article (10) comprises placing the metallic article within a hollow cathode (38) in a vacuum chamber (30), evacuating the vacuum chamber (30), applying a negative voltage to the hollow cathode (38) to produce a plasma and such that the material of the hollow cathode (38) is sputtered onto the metallic article (10) to produce a coating (22). A positive voltage (V1) is applied to the metallic article (10) to attract electrons from the plasma to heat the coating (22) and so inter-diffuse the elements of the metallic article (10) and the protective coating (22) and a negative voltage (V2) is applied to the metallic article (10) to attract ions from the plasma to bombard the coating (22) to minimize defects in the coating (22).

Abstract: A robotic arm assembly in a transport module is expansible to have an effector at its end receive a substrate in a cassette module and is then contracted and rotated with the effector to have the effector face a process module. Planets on a turntable in the process module are rotatable on first parallel axes. The turntable is rotatable on a second axis parallel to the first axes to move successive planets to a position facing the effector. At this position, an alignment assembly is aligned with, but axially displaced from, one of the planets. This assembly is moved axially into coupled relationship with such planet and then rotated to a position aligning the substrate on the effector axially with such planet when the arm assembly is expanded. A lifter assembly aligned with, and initially displaced from, such planet is moved axially to lift the substrate from the effector. The arm assembly is then contracted, rotated with the effector and expanded to receive the next cassette module substrate.

Abstract: The present invention provides methods of forming a semiconductor workpiece. One method of forming a semiconductor device in accordance with the present invention includes: providing a semiconductor workpiece; forming a via within the semiconductor workpiece, the via including plural sidewalls joining a bottom surface at respective plural corners; first sputtering a process layer upon at least a portion of the bottom surface using ionized metal plasma physical vapor deposition; and following the sputtering of the process layer, second sputtering at least some of the process layer towards the corners within the via.

Abstract: Described is a method for coating surfaces using a facility having sputtering electrodes, which has at least two electrodes that are spaced apart from one another and arranged inside a process chamber, and an inlet for a process gas. The two sputtering electrodes are acted upon by a bipolarly pulsed voltage in such a way that they are alternately operated as cathodes and as anodes. In addition, the frequency of the voltage is set between 1 kHz and 1 MHz. Furthermore, and that the operating parameters are selected in such a way that in operation, the electrodes are at least partially covered by a coating material.

Abstract: A method of vacuum depositing a layer or layers on a substrate includes controlling thickness distribution of the layer or layers over the substrate by a three-dimensional mask (64) located between the substrate 48 and a vapor source (56). In one example a circular mask (64R) is divided by radially-extending spaced-apart walls (90) dividing the mask into radially-extending apertures (98) for allowing passage of gaseous coating material through the mask from a source to the substrate. The mask and substrate are rotated with respect to the source. The vapor transmission of the apertures is directly related to the height and spacing of the walls. The height and/or angular-spacing of the walls is varied over the mask for spatially varying thickness of the layer or layers over the substrate.

Abstract: Power supply lines (41, 42) connect poles of an alternating current power source (43) to respective cathodes (58, 59) in compartments (32, 39), included among a plurality of adjacent compartments (32-39′), which together form a vacuum chamber (31) and which are connected to each other by a passageway (60). The two compartments (32, 39) with the cathodes (58, 59) are separated from each other by intermediate compartments (32′-38′), at least some of which are equipped with additional sputter cathodes (61-66).

Abstract: System and method for high vacuum sputtering combining magnetron sputtering and pulsed laser plasma deposition are described wherein simultaneous or sequential magnetron sputtering and pulsed laser deposition operations in a single ultra-high vacuum system provides high deposition rates with precise control of film morphology, stoichiometry, microstructure, composition gradient, and uniformity, in the deposition of high performance coatings of various metal, ceramic and diamond-like carbon materials.