Abstract: A pixel includes photoelectric conversion elements for generating charges through photoelectric conversion and storing the generated charges in a storing period, transfer elements for transferring the stored charges, an output node to which the charges stored in the photoelectric conversion elements are transferred through the transfer elements, an output buffer part for converting the charges in the output node into a voltage signal at a level determined by the amount of the charges, and a comparator for performing a comparing operation of comparing the voltage signal from the output buffer part against a referential voltage and outputting a digital comparison result signal. The comparator performs, under control of a reading part, the comparing operation on read-out signals read in at least two different modes through different sequences of operations for reading performed on charges stored in the different photoelectric conversion elements.

Abstract: A step of forming an on-chip lens of a phase difference pixel is simplified. An imaging element includes a pixel array unit, an individual on-chip lens, a common on-chip lens, and an adjacent on-chip lens. In the pixel array unit, pixels that performs photoelectric conversion according to incident light components, a plurality of phase difference pixels that is included in the pixels, is arranged adjacent to each other, and detects a phase difference, and phase difference pixel adjacent pixels that are included in the pixels and are adjacent to the phase difference pixels are arranged two-dimensionally. The individual on-chip lens is arranged for each of the pixels and individually condenses the incident light components on corresponding one of the pixels. The common on-chip lens is commonly arranged in the plurality of phase difference pixels and commonly condenses the incident light component.

Abstract: A bipolar junction transistor (BJT) pixel circuit, including: a BJT transistor, having a base coupled to a photo detector, an emitter coupled to a shutter circuit, and a collector coupled to a reference ground level; the photo detector, having first end coupled to the base of BJT transistor and second end coupled to the reference ground level, for generating base current based on light intensity of light incident on the photo detector; the shutter circuit, coupled to the emitter of the BJT transistor, for controlling exposure time of the photo detector according to a shutter signal; and a storage capacitor, coupled between the shutter circuit and an adjustable ground level different from the reference ground level, for storing image data captured by the photo detector, wherein the adjustable ground level is boosted to be higher than the reference ground level for one or more times during the exposure time.

Abstract: A solid-state image pickup device includes: a filter section including filters that are disposed corresponding to respective pixels, and each allowing light of a color that corresponds to corresponding one of the pixels to transmit therethrough, in which the pixels are each configured to receive the light of the predetermined color; and a microlens array section including a plurality of microlenses each configured to collect the light for corresponding one of the pixels, in which the microlenses are stacked with respect to the filter section, and are arranged in an array pattern corresponding to the respective pixels. The microlenses have two or more shapes that are different from one another corresponding to the respective colors of the light to be received by the pixels, and each having an end that is in contact with the end of adjacent one of the microlenses.

Abstract: Provided is an imaging device including: a pixel region including a first photoelectric converter; an outside-pixel region including a second photoelectric converter coupled to a predetermined electric potential; and a circuit substrate having one surface on which the first photoelectric converter and the second photoelectric converter are provided, and including a peripheral circuit electrically coupled to the first photoelectric converter.

Abstract: A system for a touch screen interface that includes a coating including a plurality of a touch activated microchips; and a projector for projecting a light image onto the coating that is applied to a touch screen substrate. The system also includes an image calibrator that calibrates touch activated microchips in the coating to features of the light image projected onto the coating. The system further includes a receiver for receiving signal from the touch activated microchips when said feature of the light image is activated.

Abstract: An apparatus for non-invasive inspection of solid bodies by muon imaging, comprising a receiver (3) adapted to intercept a muon flux associated with cosmic rays passing through a portion of a body to be inspected, sensor means (4) adapted to detect the amount of photons or Cherenkov radiation associated with the intercepted muon flux, electronic processing means adapted to reconstruct energy and direction of the muon flux incident the portion of the body to be inspected to calculate the local density thereof. The receiver (3) comprises an optical device (5) provided with at least one receiving surface (6) having reflecting and/or diffractive properties adapted to convey the Cherenkov radiation associated with muons toward the sensor means (4), these latter comprising a multipixel detection chamber (8) adapted to provide an annular image of the muon having radius and position variable as a function of the energy and direction of muon flux.

Abstract: An image pickup system includes: a light source portion configured to sequentially emit first illumination light and second illumination light; an image pickup portion configured to perform image pickup of return light from an object; an image generating portion configured to generate a first image corresponding to return light of the first illumination light and a second image corresponding to return light of the second illumination light, each of which corresponds to one field, and sequentially output the first image and the second image; a synchronization processing portion configured to simultaneously output images corresponding to a plurality of fields, selectively assigning the images to three channels of a display apparatus; and a control portion configured to set image assignment to and image update frequency for the three channels based on an evaluation value acquired from the images generated by the image generating portion.

Abstract: A package structure of a long-distance sensor includes a substrate, a light-emitting chip, a sensing chip, two packaging gel bodies, a cap, and two sheltering devices. The substrate has a bearing surface. The light-emitting chip and the sensing chip are disposed on the bearing surface and separated from each other. The two packaging gel bodies cover the light-emitting chip and the sensing chip respectively. The top surface of each of the packaging gel bodies is formed with a lens portion and a shoulder portion. The cap is formed on the bearing surface and the packaging gel bodies and provided with a light-emitting hole and a light-receiving hole accommodating the lens portions and the shoulder portions of the top surfaces of the packaging gel bodies respectively. The two sheltering devices are disposed on the shoulder portions respectively for blocking light from passing through the shoulder portions.

Abstract: Provided are a polymer compound, which comprises a copolymer containing at least a unit B, and a unit A and/or a unit C referring to repeating units A, B and C, and which has a weight-average molecular weight of from 50,000 to 1,500,000; a material for electronic devices and a material for organic electroluminescent devices comprising the compound; an organic electroluminescent device having an anode, a cathode and an organic thin film layer, wherein at least one organic thin film layer contains the polymer compound; a coating liquid containing the polymer compound and a solvent; and a method for producing an organic electroluminescent device using the coating liquid. Also provided is a polymer compound suitable to a coating method; a material for electronic devices and a material for organic electroluminescent devices comprising the compound; and an organic EL device, a coating liquid and a method for producing an organic EL device using the compound.

Abstract: In a semiconductor device in which a plurality of light receiving elements are provided in each of a plurality of pixels that form a solid-state image sensor, a decrease in the performance of the semiconductor device is prevented, the decrease occurring due to an increase in the number of wires. In the pixel having a first photodiode and a second photodiode, a first transfer transistor coupled to the first photodiode and a second transfer transistor coupled to the second photodiode are respectively controlled by the same gate electrode, thereby allowing the number of wires for controlling the first and the second transfer transistors is reduced.

Abstract: A solid-state imaging device includes a plurality of pixels arranged in a matrix, wherein one pixel of the plurality of pixels is arranged in one unit pixel region of a plurality of unit pixel regions, a plurality of sub vertical output lines, each of which outputs pixel signals from the plurality of pixels in the same pixel column, and a plurality of block select circuits provided in one-to-one correspondence with the plurality of sub vertical output lines. A load capacitance connected to a main vertical output line is reduced by connecting the plurality of sub vertical output lines and the main vertical output line via the plurality of block select circuits. This makes high-speed pixel signal readout possible.

Abstract: A solid-state imaging device including a semiconductor substrate; plural photoelectric conversion units formed side by side on the semiconductor substrate to form a light receiving unit; a peripheral circuit formed in a portion on an outside of the light receiving unit on the semiconductor substrate; a wiring section formed on the light receiving unit and formed for connecting the plural photoelectric conversion units and the peripheral circuit; and a dummy wiring section formed on an opposite side of the wiring section for at least one photoelectric conversion unit among the plural photoelectric conversion units on the light receiving unit and formed for functioning as a non-connected wiring section not connected to the photoelectric conversion units and the peripheral circuit, wherein the dummy wiring section has a predetermined potential.

Abstract: An image sensor includes: a plurality of pixels arranged in a two-dimensional matrix form and configured to receive light from outside and generate and output an imaging signal depending on an amount of the received light; a transfer unit configured to transfer the imaging signal output from each of the pixels; a sample-and-hold unit configured to hold and output the imaging signal transferred from the transfer unit; a reference voltage generation unit configured to generate and output a reference voltage; an amplifier connected to the sample-and-hold unit and to the reference voltage generation unit and configured to amplify and output the imaging signal input from the sample-and-hold unit using the reference voltage as a reference; and a control unit configured to control the reference voltage to be input to the amplifier during at least one of a horizontal blanking period and a video signal period of the imaging signal.

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Abstract: An image sensor includes at least a first row and a second row of photodiodes, each photodiode being coupled with an associated transistor, each associated transistor including a gate, the first and second row of photodiodes forming a series of 2×2 Bayer-pattern units. In each Bayer-pattern unit, a first photodiode and a second photodiode in the first row are designated respectively as a first green pixel and a blue pixel, and a third photodiode and a fourth photodiode in the second row are designated respectively as a red pixel and a second green pixel, wherein a position of the gate of the transistor associated with the first photodiode relative to the first photodiode and a position of the gate of the transistor associated with the fourth photodiode relative to the fourth photodiode are the same.

Abstract: There is provided an imaging device. In the imaging device, when a range of the signal amplitude available for a signal output from a pixel cell is small, a period, in which a signal in a buffer unit is output, is set shorter than that when the range is large.

Abstract: A solid-state imaging device including a semiconductor substrate; plural photoelectric conversion units formed side by side on the semiconductor substrate to form a light receiving unit; a peripheral circuit formed in a portion on an outside of the light receiving unit on the semiconductor substrate; a wiring section formed on the light receiving unit and formed for connecting the plural photoelectric conversion units and the peripheral circuit; and a dummy wiring section formed on an opposite side of the wiring section for at least one photoelectric conversion unit among the plural photoelectric conversion units on the light receiving unit and formed for functioning as a non-connected wiring section not connected to the photoelectric conversion units and the peripheral circuit, wherein the dummy wiring section has a predetermined potential.

Abstract: The invention concerns a method of processing pixel values comprising: during a first read phase, generating a first digital value as a function of pixel values by controlling, based on first and second control signals and a first set of increment rates, the rate that a first counter (220-i) is incremented; and during a second read phase, generating a second digital value as a function of pixel values by controlling, based on first and second control signals and a second set of increment rates, the rate that said first counter (220-i) is incremented, the first and second sets of increment rates each defining an increment rate for each of a plurality of states of the first and second control signals, wherein said first set of increment rates is different from said second set of increment rates.

Abstract: A method is provided for fabricating a pixel structure of a CMOS transistor. The method includes providing a semiconductor substrate doped with first type doping ions; and forming a trench in the semiconductor substrate by etching the semiconductor substrate. The method also includes forming isolation layers on side surfaces of the trench to prevent dark current from laterally transferring; and forming an epitaxial layer doped with second type doping ions with a doping type opposite to a doping type of the first type doping ions in the trench. Further, the method includes forming a pinning layer on a top surface of the epitaxial layer; and forming a gate structure on a surface of the semiconductor substrate at one side of the epitaxial layer. Further, the method also includes forming a floating diffusion region in the semiconductor substrate at one side of the gate structure far from the epitaxial layer.

Abstract: An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, wherein the plurality of pixels include at least one reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of a reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die. The plurality of processing and amplification circuits each comprises a source follower transistor, wherein the source follower transistor uses a PMOS.

Abstract: In the field of image sensors, more particularly time-delay integration linear sensors or TDI sensors, a sensor comprises rows of photodiodes alternating with rows of gates adjacent to the photodiodes. The gates are asymmetric, adjacent on one side to a photodiode and having, on the other side, narrow gate fingers extending toward another photodiode. Owing to their very narrow width, the fingers endow the transfer of charges with a directionality. Between two successive photodiodes there are two gates, the two being adjacent to the two photodiodes, the first having its narrow fingers turned toward the first photodiode, the second having its narrow fingers turned toward the second photodiode. The direction of transfer of the charges in the sensor may be chosen by neutralizing either the first gate or the second gate, the other gate receiving alternating potentials allowing the transfer of charges from one photodiode to the other.

Abstract: A semiconductor device including a semiconductor substrate having a surface including an active semiconductor device including one of a laser and a photodiode; and a visual indicator disposed on the semiconductor body and at least adjacent to a portion of said active semiconductor device, the indicator having a state that shows if damage to the active semiconductor device may have occurred.

Abstract: A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

Abstract: In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor.

Abstract: A solid-state imaging apparatus includes a plurality of pixel cells arranged in a pixel array unit, a vertical signal line and a pixel power supply line each connected to a source electrode and a drain electrode of an amplifying transistor, a Pch transistor for supplying potential AVDD to the vertical signal line, a Pch transistor for supplying potential PBIAS_H higher than the potential AVDD to the vertical signal line, a Pch transistor for supplying the potential PBIAS_H to the pixel power supply line, wherein while the transfer transistor is turned ON and transfers signal charges photoelectrically converted by a photodiode to the floating diffusion portion, the Pch transistors are turned ON and the potential PBIAS_H is applied to the vertical signal line and the pixel power supply line.

Abstract: A color filter is formed using a simple manufacturing method, and bias application to a pixel separating electrode allows sensitivity in low illumination intensity to be improved. In a solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation, an adjoining unit pixel section is formed in the same color to allow for lesser alignment accuracy of the color filter. A pixel separating electrode is formed in the adjoining unit pixel section, and a signal charge is shared by bias application during low illumination intensity, thereby improving an effective photodiode area.

Abstract: An image sensor for electronic cameras includes a plurality of light sensitive pixels arranged in rows and columns, wherein the pixels of a respective column can be read out via a respective column line and includes a plurality of data outputs, wherein a plurality of column lines are associated with the respective data output via at least one multiplexer device. The column lines are divided into a plurality of column line groups, wherein the respective column line group includes a plurality of column lines arranged next to one another; and wherein the number of column lines of the respective column line group corresponds to the number of the column lines associated with the respective data output.

Abstract: A solid-state imaging apparatus which includes a semiconductor portion having a first face on the light incident side and a second face opposite to the first face, and an optical system arranged on the first face, comprising a first semiconductor region of a first conductivity type provided on the second face side in the semiconductor region, a photoelectric conversion portion provided in the semiconductor portion so as to surround the first semiconductor region, including a second semiconductor region of the first conductivity type, and a gate electrode arranged between the first and the second semiconductor regions on the second face, for transferring a charge generated in the photoelectric conversion portion to the first semiconductor region, wherein the optical system is configured so that a light intensity in the second semiconductor region is higher than that in the first semiconductor region.

Abstract: In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage.

Abstract: In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage.

Abstract: A solid-state imaging device includes a plurality of pixels, each of which includes a photoelectric converter section formed on a first substrate to generate and accumulate signal charges corresponding to incident light, a charge accumulation capacitor section formed on the first substrate or a second substrate to temporarily hold the signal charges transferred from the photoelectric converter section, and a plurality of MOS transistors formed on the second substrate to transfer the signal charges accumulated in the charge accumulation capacitor section, connection electrodes formed on the first substrate, and connection electrodes formed on the second substrate and electrically connected to the connection electrodes formed on the first substrate.

Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.

Abstract: A memory array includes a charge storage structure and a plurality of conductive materials over the charge storage structure is provided. Each conductive material, serving as a word line, has a substantially arc-sidewall and a substantially straight sidewall.

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Abstract: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.

Abstract: In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive semiconductor area, through a gate insulating film. A second conductive charge storage area is formed in an area adjacent to the transfer gate electrode in the first conductive semiconductor area. A sidewall is formed on a side surface of the transfer gate electrode. An insulating film is formed to extend from a circumference surface of the sidewall on a side of the charge storage area to a position partially covering the upper part of the charge storage area. A first conductive charge storage layer is formed in the charge storage area by implanting first conductive impurities from above, into the charge storage area which is partially covered with the insulating film.

Abstract: In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive semiconductor area, through a gate insulating film. A second conductive charge storage area is formed in an area adjacent to the transfer gate electrode in the first conductive semiconductor area. A sidewall is formed on a side surface of the transfer gate electrode. An insulating film is formed to extend from a circumference surface of the sidewall on a side of the charge storage area to a position partially covering the upper part of the charge storage area. A first conductive charge storage layer is formed in the charge storage area by implanting first conductive impurities from above, into the charge storage area which is partially covered with the insulating film.

Abstract: An electronic component to be embedded in a substrate is configured so that planar coils protected by insulators are sandwiched be a pair of magnetic layers. Ports, or openings or absent parts are provided at predetermined positions of one or both of the magnetic layers, and the predetermined positions correspond to the positions opposite to terminal electrodes of the planar coils. Accordingly, a contribution to reduction of the size and weight of electronic equipment can be made.

Abstract: A solid-state imaging device has, in a semiconductor substrate, plural PDs arranged two-dimensionally and signal reading circuits which are formed as MOS transistors and read out signals corresponding to charges generated in the respective PDs. Microlenses for focusing light beams are formed over the respective PDs. An interlayer insulating film in which interconnections are buried is formed as an insulating layer between the semiconductor substrate and the microlenses. Closed-wall-shaped structures are formed in the interlayer insulating film so as to surround parts of focusing optical paths of the microlenses, respectively. The structures are made of a nonconductive material that is different in refractive index from a material of what is formed around them.

Abstract: In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage.

Abstract: Provided is a solid-state imaging element that effectively reduces 1/f noise from a signal output from a source-follower transistor. The solid-state imaging element includes a first conductivity type substrate 10, a photodiode in which carriers are accumulated in a second conductivity type accumulation region, the second conductivity type being different from the first conductivity type, a source-follower transistor 15 which has a gate electrode 151 electrically connected to a floating diffusion region accumulated with the carriers read out from the photodiode and which is provided with a second conductivity type buried channel, and an element separator 21 which is provided around an active region of the photodiode and the source-follower transistor 15. The buried channel of the source-follower transistor 15 is formed away from a sidewall of the element separator 21.

Abstract: A solid-state image pickup device, includes: a semiconductor substrate; a semiconductor layer of a first conductivity type formed in the semiconductor substrate and formed for each pixel; a solid-phase diffusion layer of a second conductivity type formed in a surface portion of the semiconductor substrate, the solid-phase diffusion layer facing the semiconductor layer; and an oxide film containing an impurity element of the second conductivity type and formed by an atomic layer deposition method.

Abstract: A solid-state imaging apparatus 100a comprises: photoelectric conversion elements PD1 and PD2 formed within a first conductivity type semiconductor substrate 100; and transfer transistors Tt1 and Tt2 formed on a first main surface of the semiconductor substrate 100, for transferring the signal charge generated by the photoelectric conversion elements outside the photoelectric conversion elements. The gate electrode 107 of each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region 102, which configures each of the photoelectric conversion elements PD1 and PD2. As a result, a high-resolution image can be achieved, in which noises and afterimages are further suppressed.

Abstract: A semiconductor device comprises a semiconductor substrate, and a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a plurality of first electrically conductive lines, an insulating film covering the plurality of first electrically conductive lines, and a second electrically conductive line arranged on the insulating film so as to intersect the plurality of first electrically conductive lines, wherein the insulating film has gaps in at least some of a plurality of regions where the plurality of first electrically conductive lines and the second electrically conductive line intersect each other, and a width of the gap in a direction along the second electrically conductive line is not larger than a width of the first electrically conductive line.

Abstract: A solid-state imaging device includes: a pixel array including a plurality of pixels disposed in a matrix, the pixels including a charge holding section configured to hold a signal charge transferred from a photoelectric conversion section, and to include a capacitor section having a first capacitance value and an additional capacitor section for increasing the first capacitance value to be a second capacitance value; and to part of a reset transistor configured to reset a charge held by the charge holding section, a test-voltage power source configured to apply a test voltage having a voltage different from a drive voltage of the reset transistor.

Abstract: A pixel array for imaging comprises an array of pixels of a first pixel type and a second pixel type. Each pixel of the first pixel type comprises a first photo-sensitive element having a first area. Each pixel of the second pixel type comprises a second photo-sensitive element and a third photo-sensitive element. The second photo-sensitive element has a second area, which is smaller than the first area. Only the second photo-sensitive element in the pixel of the second pixel type is connected to a readout circuit. The third photo-sensitive element is connected to a charge drain via a permanent connection or a switchable connection. Outputs of the second photo-sensitive elements can be used to perform phase detect autofocussing.

Abstract: Disclosed herein is a nitride based semiconductor device including: a base substrate; an epitaxial growth layer disposed on the base substrate and generating a 2-dimensional electron gas in an inner portion thereof; and an electrode structure disposed on the epitaxial growth layer, wherein the electrode structure includes: a gate electrode; a source electrode disposed at one side of the gate electrode; and a drain electrode disposed at the other side of the gate electrode and having an extension part extended to the inner portion of the epitaxial growth layer to contact the 2-dimensional electron gas.

Abstract: A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to

Abstract: An image sensor is provided. The image sensor includes a well of a second conductivity type formed on an impurity layer of a first conductivity type, source and drain regions of the first conductivity type, formed in the well to be spaced apart from each other, a first photo diode of the first conductivity type formed in the well to overlap the source and drain regions, a second photo diode of the first conductivity type formed so as not to overlap the source and drain regions and formed to be adjacent to the first photo diode, and a gate electrode formed on the first and second photo diodes.