Abstract: A high sensitive solid-state imaging apparatus which corresponds to an optical system has a short focal length (an optical system having a large incident angle ?). Each pixel (2.8 mm square in size) includes a distributed refractive index lens, a color filter for green, Al wirings, a signal transmitting unit, a planarized layer, a light-receiving element (Si photodiode), and an Si substrate. The concentric circle structure of the distributed index lens is made of four types of materials having different refractive indexes such as TiO2 (n=2.53), SiN (n=2.53), SiO2 (n=2.53), and air (n=1.0). In the concentric structure, a radial difference of outer peripheries of adjacent circular light-transmitting films is 100 nm. Furthermore, the film thickness is 0.4 ?m.

Abstract: A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction.

Abstract: An image sensor and a method for fabricating the same are disclosed, in which a partial light-shielding layer is additionally arranged on a path of a particular colored light, for example, a red colored light that may cause excessive permeation, to partially shield the corresponding red colored light in a state that red colored light, green colored light and blue colored light are permeated into each photodiode of a semiconductor substrate, so that the permeation position of the red colored light coincides with that of the green colored light and the blue colored light each having the wavelength shorter than that of the red colored light, thereby normally generating optical charges caused by the red colored light in an effective depletion area of the photodiode like those caused by the green colored light and the blue colored light.

Abstract: In a CMOS image sensor, an N-type semiconductor layer is formed on a P-type semiconductor substrate. P-type semiconductor regions are formed in one part of the semiconductor layer over the entire length of the thickness direction of the semiconductor layer in a lattice-like shape as viewed from above to compartment the semiconductor layer into a plurality of regions. Furthermore, a red filter, a green filter and a blue filter are provided in a red picture element, a green picture element and a blue picture element, respectively. Moreover, an N-type buried semiconductor layer being in contact with the semiconductor layer is formed in an immediately lower region of the red filter in an upper layer part of the semiconductor substrate.

Abstract: A CMOS image sensor and a method for fabricating the same are provided. A CMOS image sensor includes: a plurality of photodiodes a predetermined distance apart on a semiconductor substrate; an insulation layer on an entire surface of the semiconductor substrate; a passivation layer on the insulation layer; a plurality of color filters on the passivation layer corresponding to the photodiodes; a planarization layer on an entire surface of the semiconductor substrate including the color filters; and a microlens on the planarization layer corresponding to each of the color filters and having a bottom diameter of 2.5 to 3.0 ?m.

Abstract: Apparatus and methods for wavelength-dependent detection are provided. A detector includes a hybrid filter having unpatterned and patterned filter layers and at least one light-detecting sensor that detects light in first and second wavelength bands from the patterned filter layer of the hybrid filter. The unpatterned filter layer passes light in two nonoverlapping wavelength bands relative to light in wavelength bands between or among the nonoverlapping wavelength bands. The patterned filter layer includes first and second regions configured respectively to pass light in the first and second wavelength bands of the nonoverlapping wavelength bands passed by the unpatterned filter layer.

Abstract: A CMOS image sensor comprising an array of active pixel cells. Each active pixel cell includes a substrate; a photosensing device formed at or below a substrate surface for collecting charge carriers in response to incident light; and, one or more light transmissive conductive wire structures formed above the photosensing device, the one or more conductive wire structures being located in an optical path above the photosensing device. The formed light transmissive conductive wire structures provide both an electrical and optical functions. An optical function is provided by tailoring the thickness of the conductive wire layer to filter light according to a pixel color scheme. Alternately, the light transmissive conductive wire structures may be formed as a microlens structure providing a light focusing function. Electrical functions for the conductive wire layer include use as a capacitor plate, as a resistor or as an interconnect.

Abstract: A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.

Abstract: The present invention provides a light shield for shielding the floating diffusion of a complementary metal-oxide semiconductor (CMOS) imager. In accordance with an embodiment of the present invention, there is provided a pixel sensor cell including: a device region formed on a substrate; and a first layer of material forming a sidewall adjacent to a side of the device region for blocking electromagnetic radiation from the device region.

Abstract: A CMOS image sensor that is capable of substantially completely intercepting unnecessary light incident from the outside and preventing the occurrence of a hot pixel phenomenon and a method of fabricating the same are disclosed. A CMOS image sensor includes an epitaxial layer having a plurality of photodiodes. The epitaxial layer may be formed over a main pixel region and a dummy pixel region, which may be defined on a semiconductor substrate. A device passivation layer may be formed by depositing and planarizing oxide over the epitaxial layer. A silicon oxide layer may be formed by depositing and planarizing silicon oxide over the device passivation layer. The silicon oxide layer may have a concavo-convex type oxide pattern over the main pixel region and a planar oxide pattern over the dummy pixel region. A plurality of dark matrix elements may be formed by sequentially stacking a dual layer and a metal layer over the silicon oxide layer.

Abstract: Formed on a semiconductor substrate is a CCD image sensor. The CCD image sensor has photodiodes arranged in a matrix form, a transfer path for transferring signal charges generated by the photodiodes, and an output amplifier for amplifying and outputting the signal charges. The transfer path and the output amplifier are covered with a light shielding film. This light shielding film has integral radiation fins.

Abstract: An image sensor structure and an integrated lens module thereof are provided. In the image sensor structure with the integrated lens module, the image sensor structure comprises a chip and a lens module. The chip has light-sensing elements, first conducting pads, and a conducting channel. The light-sensing elements are electrically connected to the first conducting pads and the first conducting pads are electrically connected to one end of the conducting channel passing through the chip. The lens module comprises a holder and at least one lens. The holder has a through hole and the lens is embedded in the through hole and integrated with the holder. By using the integrated lens and holder, a manufacturing process of the image sensor structure is simplified and a manufacturing cost of the image sensor structure is reduced.

Abstract: A solid-state imaging device comprising a plurality of pixels arrayed on a plane, wherein each of the pixels includes a semiconductor substrate and a plurality of photoelectric conversion devices, the plurality of photoelectric conversion devices include at least one on-substrate photoelectric conversion device stacked in an upper portion of the semiconductor substrate and at least one in-substrate photoelectric conversion device provided within the semiconductor substrate in a lower portion of the on-substrate photoelectric conversion device, and the plurality of photoelectric conversion devices have a different photoelectric conversion sensitivity from each other.

Abstract: Disclosed is a pigment dispersion composition for producing a color filter. The pigment dispersion composition comprises a pigment, a binder resin, a dispersant and a solvent. The pigment is a blue anthraquinone pigment and is pretreated with a water-soluble inorganic salt and a wetting agent. The pigment dispersion composition can be used to produce a color filter for a color imaging device with good color separation and high transmittance.

Abstract: A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Abstract: A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element and is drawn out through the hole to the outside of the light shielding wall. The wiring layer has a pattern including a first part that is located within the hole and a second part that is located on the outside of the hole and has a larger width compared to the width of the first part, the width of the second part being the same with or larger than the width of the hole.

Abstract: A method for manufacturing a CMOS image sensor is disclosed. The method includes the steps of: forming a passivation oxide and a passivation nitride after forming a pad; performing a hydrogen anneal; selectively removing the passivation nitride and cleaning the passivation oxide; opening and cleaning the pad by removing the passivation oxide from the pad region; forming a pad protection membrane; forming color filter array, planarization layer and a plurality of microlenses; and removing the pad protection membrane from the pad region. A circle defect in a pixel region may be removed according to the disclosed method for manufacturing the CMOS image sensor. Accordingly, the sensitivity of the CMOS image sensor may be increased by raising the quality of the CMOS image sensor and reducing reflectance of the light.

Abstract: Methods and apparatuses are disclosed which provide imager devices having a light blocking material layer formed over peripheral circuitry outside a pixel cell array.

Abstract: A solid-state image sensor prevents shading while maintaining the wider dynamic range of an image signal without reducing its optical resolution. The image sensor has plural pairs of higher- and lower-sensitivity photodiodes and micro-lenses each of which is provided over particular one of the higher- and lower-sensitivity photodiodes for collecting the light incident on corresponding one of the higher- and lower-sensitivity photodiodes. The micro-lenses provided over the lower-sensitivity photodiodes have the curvature thereof smaller than that of the other micro-lenses, thereby providing for the lower-sensitivity photodiode a significant amount of light even for a change of the exit pupil position or incident angle or the like that causes the position of an image circle to shift.

Abstract: A method and apparatus for directing light to a light sensor and filtering out an infrared component from the directed light. In one embodiment, the apparatus includes an array of light sensors disposed on a substrate, wherein the light sensors are operable to convert light intensity into a voltage signal. The apparatus further includes a cover plate disposed over the light sensors such that the cover plate creates a cavity over the array of sensors. The apparatus further includes filter material disposed between the cover plate and the light sensors in the cavity formed between the light sensors and the cover plate. The filter material is operable to filter the light passing through the cover plate. In particular, in one embodiment, light having wavelengths in the infrared range may be filtered out.

Abstract: A semiconductor imaging instrument including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer, is disclosed.

Abstract: A pixel having a well-isolated charge storage region or floating diffusion region may be obtained by providing a separate P-well around the storage region or floating diffusion region. In one embodiment, a separate P-well entirely encases the storage region and is in contact with the storage region. This P-well provides an electrical barrier for preventing electrons that are generated elsewhere in the pixel from contaminating the storage region. In another embodiment, a first separate P-well encases and is in contact with the storage region and a second separate P-well encases and is in contact with the floating diffusion region.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The image sensor includes a sub-layer having a photodiode and a plurality of transistors formed thereon, a pad insulating layer formed on the sub-layer, a micro-lens formed on the pad insulating layer, the micro-lens including a first insulating layer having an uneven surface and a second insulating layer covering upper and side surfaces of a projected portion of the first insulating layer to form a dome shape, and a planarization layer formed on the micro-lens, and a color filter formed on the planarization layer.

Abstract: An image sensor according to embodiments may include a first substrate having photodiode cells, a second substrate having a logic circuit, and connection electrodes that may electrically connect the photodiode cells with the logic circuit. In embodiments, more area may be available on the first substrate for photodiode cells and light loss may be reduced.

Abstract: A wafer level image module includes a photo sensor for outputting an electrical signal upon receiving light, a lens set for focusing incident light onto the photo sensor, and an adjustment member disposed between the photo sensor and the lens set for controlling the distance between the photo sensor and the lens set to compensate the focus offset of the photo sensor for enabling the lens set to accurately focus the incident light onto the photo sensor in an in-focus manner so as to provide a high image quality.

Abstract: A solid-state imaging device includes an imaging part, a first horizontal charge-transfer part and a second horizontal charge-transfer part that transfer charges transferred from the imaging part in a horizontal direction, an inter-horizontal charge-transfer part transfer electrode that applies a voltage to a transfer channel area provided between the first horizontal charge-transfer part and the second horizontal charge-transfer part, and a first light-shielding film that is provided over the first horizontal charge-transfer part and the second horizontal charge-transfer part and is made of a conductive material, and the inter-horizontal charge-transfer part transfer electrode and the first light-shielding film are electrically connected to each other.

Abstract: An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.

Abstract: A solid-state imaging device includes a semiconductor substrate (1) with a photodetector portion (15). The photodetector portion (15) includes a p-type first impurity region (surface inversion layer) (6) formed in the semiconductor substrate (1) and an n-type second impurity region (photoelectric conversion region) (4) formed below the surface inversion layer (6). The photoelectric conversion region (4) is formed by introducing an n-type impurity into the semiconductor substrate (1). The surface inversion layer (6) is formed by introducing indium into a region of the semiconductor substrate (1) where the photoelectric conversion region (4) is formed.

Abstract: An optical apparatus includes an optical device (LED device or semiconductor imaging device) having a photoreceptor/light-emitting region, a peripheral circuit region and an electrode region, a transparent member having a larger light passing through region than the optical device and including, on one surface thereof, protruding electrodes for connection to the optical device, external connection electrodes for connection to a mounting substrate, conductive interconnects for connecting the protruding electrodes and the external connection electrodes, and a transparent adhesive provided between the optical device and the transparent member. In the optical apparatus, one surface of the optical device in which the photoreceptor/light-emitting region is formed and one surface of the transparent member are arrange so as to face to each other and electrodes of the optical device and the protruding electrodes of the transparent member are electrically connected and also adhered by the transparent adhesive.

Abstract: A CMOS image sensor and a method for manufacturing the same are provided, in which a nitride layer for passivation is used as a microlens to reduce topology. The CMOS image sensor includes an upper metal layer partially deposited on a dielectric layer; a first nitride layer deposited on the upper metal layer; an undoped silicon glass layer deposited on the first nitride layer and polished by chemical-mechanical polishing; color filter array elements deposited and exposed on the undoped silicon glass layer and polished by the chemical-mechanical polishing; and a second nitride layer deposited on the first nitride layer and the color filter array elements and transfer-etched after forming a sacrificial microlens on the second nitride layer.

Abstract: A CMOS image sensor that includes a semiconductor substrate with a plurality of photodiodes arranged at fixed intervals on the semiconductor substrate. A light-shielding layer partially overlaping the plurality of photodiodes and an insulating interlayer are formed on an entire surface of the semiconductor substrate including the plurality of photodiodes. A color filter layer having a plurality of color filters separated by a predetermined gap is formed on the insulating interlayer and a planarization layer is formed over the entire surface of the semiconductor substrate including the color filter layer. A plurality of microlenses are formed on the planarization layer in correspondence with the color filters of the color filter layer, wherein an additional structural layer, disposed between the color filter layer and the insulating interlayer, is provided to close a predetermined gap between the color filters of the color filter layer.

Abstract: An optical module includes an image sensor having an active area and a window mounted directly to the image sensor above the active area. The optical module further includes a mount mounted to the window, the mount supporting a barrel having a lens assembly. By mounting the window directly to the image sensor and the mount directly to the window, the substrate surface area of the optical module is minimized.

Abstract: An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.

Abstract: A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At least one switching device is for switching the at least one additional photosensitive region between the first voltage reference and a second voltage reference that is less than the first voltage reference, and for reversibly connecting the at least one additional photosensitive region to the signal collector so that the photosensor is variably responsive to different light levels.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a method of fabricating the same arc disclosed. In a complementary metal-oxide semiconductor (CMOS) image sensor including a photodiode receiving irradiated light and generating electric charges, a plurality of conductive circuits each formed in different layers, a plurality of interlayer dielectrics insulating the conductive circuits, and a micro-lens formed of the interlayer dielectrics and focusing the irradiated light to the photodiode, the CMOS image sensor includes a lens formed in a dome shape on any one of the interlayer dielectrics and re-focusing the light focused by the micro-lens to the photodiode.

Abstract: A system and method for sensing image on CMOS. According to an embodiment, the present invention provide a CMOS image sensing pixel. The pixel includes an n-type substrate, which includes a first width and a first thickness. The pixel also includes a p-type epitaxy layer overlying the n-type substrate. The p-type epitaxy layer includes a second width and a second thickness. The second width is associated with one or more characteristics of a colored light. The pixel additionally includes an n-type layer overlying the p-type epitaxy layer. The n-type layer is associated with a third width and a third thickness. Additionally, the pixel includes an pn junction formed between the p-type epitaxy layer and the n-type layer. Moreover, the pixel includes a control circuit being coupled to the CMOS image sensing pixel.

Abstract: An image sensor includes a carrier generating portion having a photoelectric conversion function, a voltage conversion portion for converting signal charges to a voltage, a charge increasing portion for increasing carriers generated by the carrier generating portion and a light shielding film formed to cover at least one part of the charge increasing portion.

Abstract: An image sensor device is provided. A substrate has a photosensor region formed therein and/or thereon. An interconnection structure is formed over the substrate, and includes metal lines formed in inter-metal dielectric (IMD) layers. At least one IMD-level micro-lens is/are formed in at least one of the IMD layers over the photosensor region. Preferably, barrier layers are located between the IMD layers. Preferably, each of the barrier layers at each level has a net thickness limited to 100 angstroms or less at locations over the photosensor region, except at locations where the IMD-level micro-lenses are located. The IMD-level micro-lenses and the etch stop layers preferably have a refractive index greater than that of the IMD layers. A cap layer is preferably formed on the metal lines, especially when the metal lines include copper. An upper-level micro-lens may be located on a level that is above the interconnection structure.

Abstract: An integrated layer stack arrangement, an optical sensor and a method for producing an integrated layer stack arrangement is disclosed. Generally, an integrated layer stack arrangement includes a plurality of layer stacks arranged on top of each other, each layer stack including a metal layer and a dielectric layer arranged; at least one photodiode integrated into the plurality of layer stacks; a trench arranged above the last least one photodiode, the trench extending through at least a portion of the plurality of layer stacks so that light impinging on the plurality of layer stacks impinges on the integrated photodiode along the trench; a first passivation partial layer applied on the plurality of layer stacks; and a second passivation partial layer applied on the plurality of layer stacks and a bottom and walls of the trench.

Abstract: A solid-state imaging device including: a plurality of photodiode parts (1); a plurality of vertical charge transfer parts (2) each of which reads out a signal charge and transfers the signal charge in a vertical direction; and a plurality of shade films (5) that have conductivity, which supplies a transfer pulse via the shade film (5), is used. The vertical charge transfer parts (2) respectively have transfer channels (13) and transfer electrodes (3). The shade film (5) is formed above the corresponding vertical charge transfer part (2) via an insulation layer (21) that insulates the shade film (5) from the transfer electrodes (3). The insulation layer (21) has a thick part (8) in a part of the insulation layer (21) where the shade film (5) is overlapped on a side of the photodiode part (1) that is a subject to be read out by the vertical charge transfer part (2).

Abstract: A CMOS image sensor and method of manufacturing the same are provided. In one embodiment, the CMOS image sensor includes: an interlayer dielectric layer formed on a semiconductor substrate including a plurality of photodiodes and transistors; a plurality of color filter isolation layers formed on the interlayer dielectric layer; a color filter layer comprising a first color filter, a second color filter, and a third color filter formed on the interlayer dielectric layer, wherein a portion of the first color filter and a portion of the second color filter are formed on one of the plurality of color filter isolation layers, and wherein a portion of the second color filter and a portion of the third color filter are formed on another of the plurality of color filter isolation layers; and microlenses formed on the color filter layer.

Abstract: A CMOS Image Sensor (CIS) that minimizes light loss and achieves maximized performance. The CIS includes a plurality of metal wirings provided on and/or over a semiconductor substrate and surrounded, respectively, by a dielectric layer, a silicon layer deposited on and/or over the plurality of metal wirings, a photodiode and a plurality of transistors provided at the silicon layer, a color filter formed on and/or over the transistors, and via-contacts penetrated through the silicon layer, the photodiode being connected to the plurality of metal wirings by the via-contacts and gap-fillers. The photodiodes and the transistors are formed after forming the metal line.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which the fabrication costs are reduced by reducing the number of photolithographic processes and yield is improved by obviating an alignment problem between color filter layers and microlenses. In one embodiment, the CMOS image sensor includes a sub layer provided with a unit pixel (e.g., a photodiode and various transistors), a planarization layer on the sub layer, and microlens-color filter structures formed on the planarization layer at constant intervals.

Abstract: An image sensor may include a device isolating layer and a photodiode on a substrate; a first dielectric layer on the photodiode; a first micro lens on the first dielectric layer; a second dielectric layer on the first micro lens; a color filter on the second dielectric layer; and a second micro lens on the color filter.

Abstract: A solid-state image sensor of the present invention is a solid-state image sensor in which pixel cells are arranged on a semiconductor substrate, wherein each of the pixel cells includes: a photoelectric conversion unit that performs photoelectric conversion of incident light; and a microlens formed above the photoelectric conversion unit, the microlens corresponding to the photoelectric conversion unit, wherein the microlens includes a transparent layer and a color filter layer.

Abstract: A solid-state image pickup apparatus includes a light receiving pixel group having light receiving pixels to convert photoelectrically incident light and to be two-dimensionally arranged; a microlens array to be two-dimensionally arranged to correspond in position to the light receiving pixels; a transparent member to be arranged on a light entering side of the microlens array; and a protrusion to support the transparent member, wherein the protrusion is higher than the microlens array and is formed to be integrated with the microlens array.

Abstract: A Light Modulating sensing MOSFET transistor includes: a substrate receiving light radiation, the substrate having two source and drain areas separated by a channel extending along a first direction; a gate conductive beam extending along a second direction being substantially perpendicular to the first direction, the beam being fixed at each of its two opposite ends on at least one supporting area and being located above the channel area, the gate beam being substantially opaque and flexible so as to perform progressive modulation of the light reaching the channel in accordance with its bending controlled by the difference of voltage between the gate and the bulk and causing the beam to bend and to come closer to the surface of the channel. A process for manufacturing a light Modulating sensing MOSFET transistor is also provided.

Abstract: There is provided an image sensor and a method of forming the same in order to prevent cross talk and to improve sensitivity. The image sensor includes a plurality of pixels for embodying colors having different wavelengths, and each of pixels includes a photoelectric conversion unit and a buried barrier layer having different thicknesses according to the wavelengths. The method of forming the image sensor includes: forming an epitaxial layer of a first type on a semiconductor substrate of a first type; and forming a buried barrier layer in the first type of epitaxial layer. The buried barrier layer is formed to have different thickness according to the wavelength.

Abstract: An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.

Abstract: An imaging array and method for operating the same is disclosed. The imaging array includes a semiconductor substrate having an epitaxial layer of semiconductor material deposited on a first surface thereof. A plurality of photodiodes is formed in a top surface of the epitaxial layer. The imaging array also includes a depletion layer underlying the photodiodes and disposed between the epitaxial layer and the semiconductor substrate. The depletion layer is connected to a power rail for removing electrons collected in the depletion layer. The depletion layer collects electrons generated by x-ray interactions in the substrate. The depletion layer can also be biased such that the depletion layer collects electrons collected by the photodiodes to provide a reset operation for the imaging array. The current flowing through the depletion layer can be used to generate a trigger signal indicating the start of an x-ray exposure.