Abstract: A display substrate and a method for manufacturing the same. The display substrate includes a stretchable substrate and a signal line on a first surface of the stretchable substrate. The first surface of the stretchable substrate is provided with a plurality of grooves spaced apart from each other, and the signal line includes a first portion within the grooves and a second portion outside the grooves.

Abstract: A vibrator device includes a base, a relay substrate supported by the base, and a vibrating element supported by the relay substrate, the relay substrate includes a base mount that is directly or indirectly fixed to the base, a vibrating element mount on which the vibrating element is mounted, and a beam that couples the base mount and the vibrating element mount, and parts of the vibrating element mount that are coupled to the vibrating element are positioned on both sides of the base mount while interposing the base mount therebetween in a plan view.

Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

Abstract: An energy harvesting device and a display device are provided. The energy harvesting device is configured to generate a power signal and the energy harvesting device includes a slot antenna. The slot antenna comprises a first section and a second section. The first section of the slot antenna is a linear shape and comprises an opening end, and the second section of the slot antenna is a bending shape and comprises a plurality of continuously bending corners.

Abstract: In a microelectromechanical component according to the invention, at least one microelectromechanical element (5), electrical contacting elements (3) and an insulation layer (2.2) and thereon a sacrificial layer (2.1) formed with silicon dioxide are formed on a surface of a CMOS circuit substrate (1) and the microelectromechanical element (5) is arranged freely movably in at least a degree of freedom. At the outer edge of the microelectromechanical component, extending radially around all the elements of the CMOS circuit, a gas- and/or fluid-tight closed layer (4) which is resistant to hydrofluoric acid and is formed with silicon, germanium or aluminum oxide is formed on the surface of the CMOS circuit substrate (1).

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.

Abstract: A sensor includes a sensor substrate, and an upper lid substrate joined to an upper surface of the sensor substrate. The sensor substrate includes a fixed part, a deformable beam connected to the fixed part, and a weight connected to the beam. The weight is movable relative to the fixed part. The upper lid substrate includes a first part containing silicon and a second part joined to the first part and containing glass. The first part includes a projection protruding toward the sensor substrate relative to the second part. The sensor has high accuracy or high reliability.

Abstract: The present application discloses a sensor system that includes a sensor having a sensor surface, a sample cartridge including one or more flexible membranes and a membrane frame, the membrane frame including one or more openings covered by the one or more flexible membranes defining one or more wells for holding one or more samples, the flexible membrane having a sample side supporting the sample and an opposite sensor side, the sample cartridge being removably insertable in the sensor system such that the sensor side of the flexible membrane is positioned above and faces the sensor surface, a displacement mechanism that can be actuated to displace the flexible membrane toward the sensor surface such that the sample is moved to a position closer to the sensor surface, and an optical imaging system that detects light emitted from the sensor. Disclosed also are a cartridge cassette and a method of use.

Abstract: A sensor with a nanowire heater may be provided. The sensor may be patterned in a device layer of a Silicon on Insulation (SOI) wafer comprising a backside layer and a Buried Oxide (BOX) layer and the nanowire heater may be patterned in the device layer of the SOI wafer adjacent to the sensor. Next, metal routing may be created for the SOI wafer and a bond carrier wafer may be provided on a metal routing side of the SOI wafer. The backside layer may then be ground until the BOX layer is exposed. Then the device layer may be patterned through the BOX layer to expose the sensor and the nanowire heater. A dielectric may be deposited covering at least one of the following: the sensor; and the nanowire heater.

Abstract: Unwanted or parasitic capacitances may occur in MEMS switches. To reduce or eliminate the impact of the unwanted or parasitic capacitance, an extra device, such as a second MEMS switch, may be coupled to a first MEMS switch to divert the unwanted or parasitic capacitance to ground.

Abstract: A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.

Abstract: The invention discloses a circuit aging detection sensor based on voltage comparison. A control circuit generates an aging voltage signal, a standard voltage signal and a reference voltage signal. The aging voltage signal passes through a first voltage-controlled oscillator to generate an aging frequency signal. The standard voltage signal passes through a second voltage-controlled oscillator to generate a standard frequency signal. The standard frequency signal and the aging frequency signal pass through an aging detection circuit to generate a frequency difference signal. A level signal generated by a serial data detector passes through a beat-frequency oscillator to generate a reset signal. A counter quantizes aging information, which is converted by a digital-analog converter into a quantized voltage signal. The quantized voltage signal is compared with the reference voltage signal by a voltage comparator, to generate a hopping signal at a voltage superposition node, and an aging signal is output.

Abstract: Disclosed is a liquid-sealed cartridge in which a liquid is transferred by a centrifugal force generated when the liquid-sealed cartridge is rotated around a rotation shaft, including: a liquid storage portion configured to store the liquid therein; a seal having an outer peripheral portion connected to the liquid storage portion, the seal being configured to seal the liquid storage portion; a flow path connected to the liquid storage portion via the seal, through which the liquid in the liquid storage portion is transferred by the centrifugal force in a direction away from the rotation shaft, wherein, when the seal receives a pressing force, the seal is inclined in a pressing direction, with one portion of the outer peripheral portion thereof remaining connected with the liquid storage portion, and the other portion of the outer peripheral portion being separated from the liquid storage portion.

Abstract: A touch device includes a base; a first peripheral wire, a second peripheral wire, a third peripheral wire, a first shield wire and a second shield wire are disposed on the base; there is a first potential difference between the first peripheral wire and the second peripheral wire, and there is a second potential difference between the second peripheral wire and the third peripheral wire. The second peripheral wire is disposed between and spaced from the first peripheral wire and the third peripheral wire. The first shield wire is discontinuously disposed between the first peripheral wire and the second peripheral wire. The second shield wire is discontinuously disposed between the second peripheral wire and the third peripheral wire.

Abstract: In one aspect of the disclosure, a semiconductor package is disclosed. The semiconductor package includes a lead frame. A semiconductor die is attached to a first side of the lead frame. A protective shell covers at least a first portion of the first surface of the semiconductor die. The protective shell comprises of ink residue. A layer of molding compound covers an outer surface of the protective shell and exposed portion of the first surface of the semiconductor die. A cavity space is within an inner space of the protective shell and the first portion of the top surface of the semiconductor die.

Abstract: A pseudo-piezoelectric d33 vibration device includes transistors and receivers electrically connected to the transistors. Each transistor controls a corresponding one of the receivers to receive a second vibration wave, generated after an object reflects a first vibration wave, and to generate a sensing signal. Each receiver has a first electrode, a second electrode and a nano-gap, which is created between the first and second electrodes after a semiconductor-metal compound is formed. A display integrating the pseudo-piezoelectric d33 vibration device is also provided.

Abstract: A display apparatus includes a flexible substrate and a first insulation layer disposed on the flexible substrate. The flexible substrate includes a bending area. The first insulation layer includes a first unevenness disposed over the bending area. The first unevenness includes two or more steps in at least a portion of the first unevenness.

Abstract: A mirror assembly, a control method thereof and a light adjusting board are provided. The mirror assembly includes a mirror, a first rotation electrode, a second rotation electrode, a first electrode, a second electrode, a third electrode and a fourth electrode. The mirror includes a rotation axis; the first rotation electrode and the second rotation electrode are respectively at two sides of the rotation axis; the first electrode and the second electrode are opposite to form a first electric field; the first rotation electrode is between the first electrode and the second electrode; the third electrode and the fourth electrode are opposite to form a second electric field; the second rotation electrode is between the third electrode and the fourth electrode; the first rotation electrode and the second rotation electrode rotate under the two electric fields to drive the mirror to rotate around the rotation axis.

Abstract: A microelectromechanical pressure sensor includes a monolithic body of semiconductor material having a front surface. A sensing structure is integrated in the monolithic body and has a buried cavity completely contained within the monolithic body at the front surface. A sensing membrane is suspended above the buried cavity and is formed by a surface portion of the monolithic body. Sensing elements of a piezoresistive type are arranged in the sensing membrane to detect a deformation of the sensing membrane as a result of a pressure. The pressure sensor is further provided with a self-test structure integrated within the monolithic body to cause application of a testing deformation of the sensing membrane in order to verify proper operation of the sensing structure.

Abstract: A pressure sensor package includes a package lead frame including a molding plastic layer with a top surface and a plurality of lead frame units mounted in the molding plastic layer, a sidewall disposed on the top surface of the molding plastic layer and surrounding a receiving chamber, a pressure sensor module mounted on the top surface of the molding plastic layer and disposed in the receiving chamber, and a packaging silicone mounted in the receiving chamber to encapsulate the pressure sensor module.

Abstract: A pressure detection apparatus includes a base plate including a first surface, a second surface, and an opening, a pressure sensor disposed on the first surface so as to cover the opening of the base plate and outputting an electric signal according to a pressure of measured fluid inside the opening, a lead terminal electrically connected to the pressure sensor, a housing holding the base plate and the lead terminal and including an exposed portion in which a portion of the lead terminal is exposed, and a capacitor protecting the pressure sensor. The housing includes a capacitor housing portion, the capacitor being electrically connected to the lead terminal inside the exposed portion, and a positioning portion that positions, inside the capacitor housing portion, the capacitor that has been mounted in the capacitor housing portion.

Abstract: A semiconductor device includes a semiconductor substrate including a fin of semiconductor material having a fin width and a fin length. The fin length is greater than the fin width and extends between a first fin end and a second fin end. A gate electrode extends over the fin at a first fin location between the first fin end and the second fin end. A dummy gate electrode extends over the first fin end and is floating.

Abstract: There is provided a fingerprint sensing module comprising a fingerprint sensor device having a sensing array arranged on a first side of the device, the sensing array comprising an array of fingerprint sensing elements. The fingerprint sensor device also comprises connection pads for connecting the fingerprint sensor device to external circuitry. The fingerprint sensing module further comprises a fingerprint sensor device cover structure arranged to cover the fingerprint sensor device, the cover structure having a first side configured to be touched by a finger, thereby forming a sensing surface of the sensing module, and a second side facing the sensing array, wherein the cover structure comprises conductive traces for electrically connecting the fingerprint sensor module to external circuitry, and wherein a surface area of the cover structure is larger than a surface area of the sensor device.

Abstract: An electronic component comprises a carrier (3), a sensor device (2) mounted on the carrier (3), which sensor device (2) comprises a sensor chip (21), and an electrostatic discharge protection element (1) for protecting the sensor chip (21) from an electrostatic discharge, which protection element (1) is mounted on the carrier (3).

Abstract: An electronic pen includes a tubular casing, and a first coupling member and a second coupling member that are coupled to each other in a hollow portion of the casing in an axial direction of the casing. In the axial direction, the first coupling member and the second coupling member are coupled to each other while partially overlapping each other, and in a coupling portion between the first coupling member and the second coupling member, a welded portion that attaches the first coupling member and the second coupling member to each other is formed.

Abstract: Provided is a bistable driving method for an electrowetting display, comprising: setting a non-selected voltage for one or more writing rows; switching a row voltage of the one or more writing rows from the non-selected voltage to a selected voltage; applying the digital voltage on at least one column of digital electrodes to be written; switching the row voltage of the one or more writing rows from the selected voltage to the non-selected voltage, and decreasing the digital voltage applied to the at least one column to a voltage less than the opening voltage minus the selected voltage; and applying the steps above to next one or more writing rows until an entire display screen is written.

Abstract: An optical scanner includes a movable portion having a movable plate on which a light reflecting portion is provided, a frame body portion provided surrounding the movable portion when viewed in a planar manner, a first axis portion that oscillatably supports the movable portion around a first oscillation axis, a second axis portion that oscillatably supports the frame body portion around a second oscillation axis, which intersects the first oscillation axis, and a permanent magnet provided in the frame body portion, in which the movable portion has a projection portion, which is disposed overlapping the first oscillation axis within a region that does not overlap with the permanent magnet when viewed in a planar manner, and which projects, from the movable plate, further to the permanent magnet side than the first axis portion.

Abstract: A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.

Abstract: Provided are an ink jet printing organic light emitting diode display panel and a manufacturing method thereof. The method includes: sequentially forming a passivation layer and a planarization layer on a carrier substrate prepared with one pair of thin film transistors, wherein the passivation layer covers the one pair of thin film transistors; forming one pair of vias in the passivation layer and the planarization layer; forming one pair of anodes on the planarization layer, wherein the one pair of anodes are electrically connected to the one pair of thin film transistors through the one pair of vias in the passivation layer and the planarization layer; preparing an electrode separation layer between the one pair of anodes with Al2O3 or an organic photoresist material; forming a light emitting layer over the one pair of anodes by ink jet printing, wherein the light emitting layer covers the electrode separation layer.

Abstract: A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.

Abstract: The present invention provides a semiconductor device, the semiconductor device includes a substrate, at least one bit line is disposed on the substrate, a rounding hard mask is disposed on the bit line, and the rounding hard mask defines a top portion and a bottom portion, and at least one storage node contact plug, located adjacent to the bit line, the storage node contact structure plug includes at least one conductive layer, from a cross-sectional view, the storage node contact plug defines a width X1 and a width X2. The width X1 is aligned with the top portion of the rounding hard mask in a horizontal direction, and the width X2 is aligned with the bottom portion of the rounding hard mask in the horizontal direction, X1 is greater than or equal to X2.

Abstract: Disclosed herein are maskless imaging tools and display systems that include piezoelectrically actuated mirrors and methods of forming such devices. The maskless imaging tool may include a light source. Additionally, the tool may include one or more piezoelectrically actuated mirrors for receiving light from the light source. The piezoelectrically actuated mirrors are actuatable about one or more axes to reflect the light from the light source to a workpiece positioned to receive light from the piezoelectrically actuated mirror. Disclosed herein is a maskless imaging tool that is a laser direct imaging lithography (LDIL) tool. The maskless imaging tool may also be a via-drill tool. Disclosed herein is also a piezoelectrically actuated mirror used in a projection system. For example, the projection system may be integrated into a pair of glasses.

Abstract: A semiconductor structure includes a first substrate; a heater surrounded by the first substrate; a pressure adjusting material disposed over the first substrate and adjacent to the heater; a second substrate disposed over the first substrate; and a cavity enclosed by the first substrate and the second substrate, wherein the pressure adjusting material is disposed within the cavity.

Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.

Abstract: A micro-electro-mechanical sensor comprises a first substrate comprising an element movable with respect to the first substrate and a second substrate comprising a first contact pad and a second contact pad. The first substrate is bonded to the second substrate such that a movement of the element changes a coupling between the first contact pad and the second contact pad.

Abstract: An integrated circuit device assembly may be formed comprising a reconstituted wafer attached to a base substrate, wherein the base substrate provides thermal management and optical signal routes. In one embodiment, the base substrate may include a plurality of electrical interconnects for electrically coupling integrated circuit devices in the reconstituted wafer. In another embodiment, a plurality of electrical interconnects for electrically coupling integrated circuit devices in the reconstituted wafer may be formed in the reconstituted wafer itself.

Abstract: In a physical quantity sensor, wirings provided on a projection and a bonding pad form a silicide layer and are electrically connected. The wirings are multilayered films. A noble metal layer covers the projection and contacts the bonding pad to form the silicide layer. A metal layer extends between the noble metal layer and a base substrate. The metal layer, the noble metal layer, an adhesion layer, and an insulating layer are stacked in this order from the base substrate in all areas except for atop the projection.

Abstract: Package structures and methods of forming package structures are described. A method includes placing a first package within a recess of a first substrate. The first package includes a first die. The method further includes attaching a first sensor to the first package and the first substrate. The first sensor is electrically coupled to the first package and the first substrate.

Abstract: A MEMS structure includes a substrate, an inter-dielectric layer on a front side of the substrate, a MEMS component on the inter-dielectric layer, and a chamber disposed within the inter-dielectric layer and through the substrate. The chamber has an opening at a backside of the substrate. An etch stop layer is disposed within the inter-dielectric layer. The chamber has a ceiling opposite to the opening and a sidewall joining the ceiling. The sidewall includes a portion of the etch stop layer.

Abstract: A membrane component comprises a membrane structure comprising an electrically conductive membrane layer. The electrically conductive membrane layer has a suspension region and a membrane region. In addition, the suspension region of the electrically conductive membrane layer is arranged on an insulation layer. Furthermore, the insulation layer is arranged on a carrier substrate. Moreover, the membrane component comprises a counterelectrode structure. A cavity is arranged vertically between the counterelectrode structure and the membrane region of the electrically conductive membrane layer. In addition, an edge of the electrically conductive membrane layer projects laterally beyond an edge of the insulation layer by more than half of a vertical distance between the electrically conductive membrane layer and the counterelectrode structure.

Abstract: Provided is a semiconductor device including an interconnection structure provided on a cell region of a substrate to include a first line and a second line sequentially stacked on the substrate, and a defect detection structure provided on a peripheral region of the substrate to include first and second defect detection lines provided at the same levels as those of the first and second lines, respectively.

Abstract: A microphone includes a housing including a substrate and a cover disposed over the substrate, the housing including a sound port between the interior of the housing and the exterior of the housing. The microphone also includes a microelectromechanical systems (MEMS) transducer and an integrated circuit (IC) positioned within the housing and mounted on a common surface of the housing, where the MEMS transducer is electrically connected to the IC, and the IC is electrically connected to a conductor on the substrate. The microphone further includes an encapsulating material covering the IC, and an encapsulating material confinement structure disposed between the MEMS transducer and the IC, where the encapsulating material confinement structure at least partially confines the encapsulating material around the IC.

Abstract: A microelectromechanical structure with electrothermal actuation including a fixed part, a moveable part, a first electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part and a second electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part, the beams being mechanically connected to the moveable part enabling a displacement of the moveable part by electrothermal actuation, an electrically conductive connecting element connecting the moveable part to the fixed part, a first connector for connecting the first actuating beam to a first polarisation source and a second connector for connecting the second actuating beam to a second polarisation source, such that the first and the second can be polarised differently and separately.

Abstract: First and second contacts are formed on first and second wafers from disparate first and second conductive materials, at least one of which is subject to surface oxidation when exposed to air. A layer of oxide-inhibiting material is disposed over a bonding surface of the first contact and the first and second wafers are positioned relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material. Thereafter, the first and second contacts and the layer of oxide-inhibiting material are heated to a temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond.

Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.

Abstract: Embodiments include systems and methods for determining a processing parameter of a processing operation. Some embodiments include a diagnostic substrate that comprises a substrate, a circuit layer over the substrate, a capping layer over the circuit layer, and a sensing region across the capping layer. In an embodiment, the sensing region comprises, an array of first micro resonators and a second micro resonator. In an embodiment, the array of first micro resonators surround the second micro resonator.

Abstract: The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.

Abstract: A method for producing a micromechanical element includes producing a micromechanical structure, the micromechanical structure having: a functional layer for a micromechanical element, a sacrifical layer at least partly surrounding the functional layer, and a closure cap on the sacrifical layer. The method further includes applying a cover layer on the micromechanical structure. The method further includes producing a grid structure in the cover layer. The method further includes producing a cavity below the grid structure, as access to the sacrifical layer. The method further includes at least partly removing the sacrifical layer. The method further includes applying a closure layer at least on the grid structure of the cover layer for the purpose of closing the access to the cavity.

Abstract: Capped microelectromechanical systems (MEMS) devices are described. In at least some situations, the MEMS device includes one or more masses which move. The cap may include a stopper which damps motion of the one or more movable masses. In at least some situations, the stopper damps motion of one of the masses but not another mass.

Abstract: A MEMS device package comprising a first die of semiconductor material including a contact pad and a second die of semiconductor material stacked on the first die. The second die is smaller than the first die. The second die includes a contact pad, and a conductive wire is coupled between the contact pad of the first die and a contact pad of the second die. A mold compound is on the second die and the first die. A vertical connection structure is on the contact pad of the second die. The vertical connection structure extends through the mold compound.