Abstract: A self-powered circuit package includes a substrate and an integrated circuit (IC). The IC is mounted on a surface of the substrate. An electrical interconnector electrically couples the IC to the substrate. A solar cell is provided having opposing first and second main surfaces. A portion of the first main surface of the solar cell is configured to receive light from an external source. The solar cell converts energy of the received light into electrical power. The solar cell is disposed above the IC and electrically connected to the IC by way of the substrate to supply the generated power to the IC. A clear mold compound encapsulates a surface of the substrate, the IC, the electrical interconnector, and the solar cell.

Abstract: System-in packages, or multichip modules, are described which can include multi-layer chips and multi-layer dummy substrates over a carrier, multiple through vias blindly or completely through the multi-layer chips and completely through the multi-layer dummy substrates, multiple metal plugs in the through vias, and multiple metal interconnects, connected to the metal plugs, between the multi-layer chips. The multi-layer chips can be connected to each other or to an external circuit or structure, such as mother board, ball grid array (BGA) substrate, printed circuit board, metal substrate, glass substrate, or ceramic substrate, through the metal plugs and the metal interconnects.

Abstract: An image sensor package and method of manufacture that includes a crystalline handler with conductive elements extending therethrough, an image sensor chip disposed in a cavity of the handler, and a transparent substrate disposed over the cavity and bonded to both the handler and image sensor chip. The transparent substrate includes conductive traces that electrically connect the sensor chip's contact pads to the handler's conductive elements, so that off-chip signaling is provided by the substrate's conductive traces and the handler's conductive elements.

Abstract: An electronic switching component (1) with gallium arsenide-based field effect transistors has its own housing (2) with at least one transparent section (3). An electronic microwave circuit (10) has at least one electronic switching component (1) with gallium arsenide-based field effect transistors and its own housing (2) with at least one transparent section (3). The at least one electronic switching component (1) can be illuminated by means of at least one light source (6, 11).

Abstract: An electronic device can include different components providing different functionality. Some electronic devices can include a proximity sensor for determining when a user's face is near the device. The sensor can include an emitter and a detector that are separated by a foam block to limit cross-talk between the emitter and detector. A sheet can be placed over the foam block to define openings for each of the emitter and detector. Some electronic devices can also include a camera. A glass cover secured to the device enclosure can protect the camera. To improve an adhesive bond between the glass cover and a metal enclosure, an ink layer can be placed between an adhesive and the glass. In addition, the camera or another component may need to be grounded to ensure proper operation. During assembly, however, the position of the camera can shift due to closing an enclosure. A grounding assembly that maintains contact with the camera in its initial and final positions can be provided.

Abstract: An imaging module includes an imaging chip including a micro-lens guiding incident light and an imaging element in a semiconductor substrate and converting the incident light into an electric signal, and a polarizing glass chip including a polarizing filter glass having a polarizer determining a polarization direction of the incident light arranged on a transparent substrate such that the polarizer faces the micro-lens and a spacer member connected to the polarizing filter glass to adjust a gap between the polarizer and the micro-lens of the imaging chip. In the imaging module, a melt-bonding surface of the spacer member is melt-bonded to the semiconductor substrate such that the polarizer of the polarizing glass chip and the micro-lens of the imaging chip are arranged close to each other via the gap, and the imaging element and the micro-lens of the imaging chip are sealed by the polarizing glass chip.

Abstract: A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

Abstract: A semiconductor device is made by forming an interconnect structure over a substrate. A semiconductor die is mounted to the interconnect structure. The semiconductor die is electrically connected to the interconnect structure. A ground pad is formed over the interconnect structure. An encapsulant is formed over the semiconductor die and interconnect structure. A shielding cage can be formed over the semiconductor die prior to forming the encapsulant. A shielding layer is formed over the encapsulant after forming the interconnect structure to isolate the semiconductor die with respect to inter-device interference. The shielding layer conforms to a geometry of the encapsulant and electrically connects to the ground pad. The shielding layer can be electrically connected to ground through a conductive pillar. A backside interconnect structure is formed over the interconnect structure, opposite the semiconductor die.

Abstract: An optical sensor has a glass base having a concave portion, and a glass lid is bonded to the base and overlies the concave portion to form a cavity portion. A photoelectric conversion element id accommodated in the cavity portion. Internal wirings are each connected at one end to the photoelectric conversion element and extend through notches each formed at a corner of a peripheral edge along an outside surface of the base. The other ends of the internal wirings are connected inside the notches to external wirings that extend along an outside surface of the base and terminate in external terminals.

Abstract: At least one green filter G having a filter characteristic for transmitting a green light component is formed in all of horizontal, vertical and diagonal directions in a block consisting of six optoelectronic transducers in each of the horizontal and vertical directions. Further, at least one blue filter B and red filter R having filter characteristics for transmitting a blue light component and a red light component are formed in the horizontal and vertical directions. Even an image obtained after ½ subsampling along each of the horizontal and vertical directions will contain pixels having a green component in all of the horizontal, vertical and diagonal directions in blocks of 6×6 pixels. The precision of reproducibility in interpolation processing is thus improved.

Abstract: A semiconductor device includes a substrate with first and second lower electrodes, a semiconductor element supported on the substrate and including upper and lower electrodes, a conductive bonding material bonding the lower electrode of the element and the substrate to each other, a wire connecting the upper electrode of the element and the substrate to each other, and a sealing resin covering the semiconductor element and the wire. The substrate includes a barrier that encloses at least partially the conductive bonding material.

Abstract: To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes. an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

Abstract: A wafer-level packaging method of BSI image sensors includes the following steps: S1: providing a wafer package body comprising a silicon base, an interconnect layer, a hollow wall and a substrate; S2: cutting the wafer package body via a first blade in a first cutting process to separate the interconnect layer of adjacent BSI image sensors; and S3: cutting the wafer package body via a second blade in a second cutting process to obtain independent BSI image sensors. As a result, damage of the interconnect layer and the substrate may be decreased to improve performance and reliability of the BSI image sensor.

Abstract: An optoelectronic device includes an optoelectronic component that receives or generates radiation, a frame having a cavity, the optoelectronic component being arranged in said cavity, a connection carrier to which the optoelectronic component is fixed, and a cover covering the cavity and forming a radiation passage area for the radiation, wherein a beam path from the optoelectronic component to the radiation passage area is free of an encapsulation material for the optoelectronic component.

Abstract: The invention provides a chip package and a fabrication method thereof. In one embodiment, the chip package includes: a substrate having a semiconductor device and a conductive pad thereon; an insulator ring filling a trench formed in the substrate, wherein the insulator ring surrounds an intermediate layer below the conductive pad; and a conductive layer disposed below a backside of the substrate and electrically connected to the conductive pad.

Abstract: A light emitting device includes: a first light emitting element mounting unit including: a first substrate; a first light emitting element on a first surface of the first substrate; and a first substrate holder which includes a first column, and a first protrusion which extends from the first column toward the first light emitting element and bonded to the first surface of the first substrate; and a second light emitting element mounting unit including: a second substrate; a second light emitting element mounted on a first surface of the second substrate; and a second substrate holder which includes: a second column, and a second protrusion which extends from the second column toward the second light emitting element and bonded to the first surface of the second substrate. The second light emitting element mounting unit is stacked on the first light emitting element mounting unit.

Abstract: An optoelectronic package includes an optoelectronic chip, a transparent protection layer and a plurality of pads. The optoelectronic chip has an upper surface and an active area defined on the upper surface. The transparent protection layer is connected to the optoelectronic chip and covers the upper surface. The transparent protection layer touches and is entirely attached to the active area. The pads are electrically connected to the optoelectronic chip.

Abstract: The present invention relates to an electronic proximity sensor having a decorative surface, characterized in that the decorative surface comprises a semiconductor layer, the thickness of which is between 10 nm and 100 nm. This coating imparts a desired metallic appearance to the proximity sensor, without the property thereof as a proximity sensor being lost.

Abstract: A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

Abstract: An electrical circuit includes a solar cell that has a photovoltaically active front side and a back side. An electronic or micromechanical component is arranged on the back side of the solar cell and is electrically connected to the photovoltaically active front side of the solar cell by a contact-making structure. The electrical circuit also includes a transparent first protective layer that is arranged on the photovoltaically active front side of the solar cell. The contact-making structure has a first contact-making section that is arranged on a front side of the first protective layer facing away from the solar cell.

Abstract: A method of forming a MEMS device by encapsulating a MEMS element with a sacrificial layer portion deposited over a substrate arrangement, the portion defining a cavity for the MEMS element, forming at least one strip of a further sacrificial material extending outwardly from the portion, forming a cover layer portion over the sacrificial layer portion, the cover layer portion terminating on the at least one strip, removing the sacrificial layer portion and the at least one strip, the removal of the at least one strip defining at least one vent channel extending laterally underneath the cover layer portion and sealing the at least one vent channel. A device including such a packaged micro electro-mechanical structure.

Abstract: A wafer level vacuum packaged (WLVP) device having a first substrate having an array of detectors and a second substrate bonded to the first substrate having a plurality of protrusions and a plurality of getter material members projecting outwardly from a sidewall of the protrusions members are disposed at oblique angles to the sidewalls and have ends extending into gaps between the protrusions. The device is formed by: forming protrusions into a surface of a substrate; and depositing getter material by physical vapor deposition from an evaporating source of the getter material at an oblique angle to the sidewalls, atoms of the getter material initially forming nucleation sites on the sidewalls with subsequent atoms attaching to the nucleation sites and shadowing area surrounding each nucleation site, the getter material thereby growing into structures towards the evaporating source.

Abstract: According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate.

Abstract: To provide a glass ceramic composition with which a substrate for a light emitting element having a high reflectance and a high thermal conductivity can be obtained, and which can suppress breakage at the time of production of the substrate for a light emitting element. A glass ceramic composition to be used for production of a substrate on which a light emitting element is to be mounted, which comprises from 30 to 45 mass % of a glass powder, from 35 to 50 mass % of an alumina powder and from 10 to 30 mass % of a zirconia powder, to the total amount of the glass powder, the alumina powder and the zirconia powder, wherein the average particle size of the zirconia powder is at most ¼ of the average particle size of the alumina powder.

Abstract: This invention relates to a method for producing solar cells, and photovoltaic panels thereof. The method for producing solar panels comprises employing a number of semiconductor wafers and/or semiconductor sheets of films prefabricated to prepare them for back side metallization, which are placed and attached adjacent to each other and with their front side facing downwards onto the back side of the front glass, before subsequent processing that includes depositing at least one metal layer covering the entire front glass including the back side of the attached wafers/sheets of films. The metallic layer is then patterned/divided into electrically isolated contacts for each solar cell and into interconnections between adjacent solar cells.

Abstract: An image sensor package including a PCB including bonding areas, an image sensor including bonding pads on edge portions thereof on the PCB, bonding wires connecting the bonding pads with the bonding areas, an insulating adhesion film attaching the bonding wires to the bonding pads on the edge portions of the image sensor, a heat spread pattern spaced apart from the bonding wires and the image sensor on the insulating adhesion film, a supporting holder spaced apart from the edge portions of the image sensor, encloses the image sensor, contacts a top surface of the heat spread pattern and the PCB, and includes a supporting portion at an upper portion thereof, and a transparent cover covering the image sensor on the supporting portion of the supporting holder and spaced apart from the top surface of the image sensor is provided.

Abstract: An LED lead frame includes an insulative base having a cavity on one side. A pair of conductive leads each has an end exposed in the cavity and another end extended out of insulative base. An electrostatic discharge protection device is insert-molded in the insulative base with only one side thereof exposed out of the insulative base, and is electrically interconnecting with the conductive leads.

Abstract: A semiconductor chip includes a magnetic storage device and includes an electrode pad on a first face. The semiconductor chip is coated with a magnetic shield layer in a state in which at least the electrode pad is exposed. The semiconductor chip is mounted on an interconnect substrate through a bump. At least one of the semiconductor chip and the interconnect substrate includes a convex portion, and the bump is disposed over the convex portion.

Abstract: Embodiments include but are not limited to apparatuses and systems including semiconductor packages, e.g. memory packages, having an interposer including at least one topological feature, such as a depression in a surface of the interposer, a die coupled to the surface of the interposer, and an encapsulant material formed over the die and the interposer, and disposed in the at least one depression to resist movement of the encapsulant material relative to the interposer. Other embodiments may be described and claimed.

Abstract: There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.

Abstract: An imaging device support structure includes a master flange having an opening portion through which an optical axis A passes, an imaging device which is attached to the master flange via the attachment plate and is positioned in the opening portion as viewed in an optical axis A direction, and a shielding member which shields a gap between the master flange and the imaging device in the opening portion. The shielding member is pressed against the opening edge of the first opening portion. The opening edge of the first opening portion has a substantially polygonal shape with corner portions which outwardly protrude.

Abstract: An embodiment of the invention provides a chip package, which includes: a semiconductor substrate having a device region; a package layer disposed on the semiconductor substrate; a spacing layer disposed between the semiconductor substrate and the package layer and surrounding the device region; and an auxiliary pattern having a hollow pattern formed in the spacing layer, a material pattern located between the spacing layer and the device region, or combinations thereof.

Abstract: A photoelectric conversion device including a substrate, a photoelectric conversion element including a first electrode, a second electrode and an organic compound layer and a sealing member that are disposed in this order. When a cross section of the photoelectric conversion device in a thickness direction is observed with the sealing member being placed at an upper side, a bonding member seals the organic compound layer at an outside thereof. An output electrode on the sealing member has a protrusion. A side conductive portion is electrically connected with the protrusion in an up-and-down direction. A substrate conductive member electrically connected with the first electrode and the second electrode extends to an outside of the bonding member. An electrical connecting member electrically connects the side conductive portion to the substrate conductive member at a further outside of the bonding member.

Abstract: A semiconductor device includes: a semiconductor substrate that includes a semiconductor; an electrode layer formed on a first surface side inside the semiconductor substrate; a frame layer laminated on the first surface of the semiconductor substrate; a conductor layer formed in an aperture portion formed by processing the semiconductor substrate and the frame layer in such a manner as to expose the electrode layer on the first surface of the semiconductor substrate; a vertical hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate.

Abstract: A method of fabricating a light emitting diode device comprises providing a substrate, growing an epitaxial structure on the substrate. The epitaxial structure includes a first layer on the substrate, an active layer on the first layer and a second layer on the active layer. The method further comprises depositing a conductive and reflective layer on the epitaxial structure, forming a group of first trenches and a second trench. Each of the first and second trenches extends from surface of the conductive and reflective layer to the first layer to expose part of the first layer. The method further comprises depositing conductive material to cover a portion of the conductive and reflective layer to form a first contact pad, and cover surfaces between adjacent first trenches to form a second contact pad. The second contact pad electrically connects the first layer by filling the conductive material in the first trenches.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: Disclosed is a module structure including a front sheet, a back sheet, and an optoelectronic device disposed between the front sheet and the back sheet. A first packaging layer is disposed between the optoelectronic device and the front sheet. The back sheet is a layered structure of a hydrogenated styrene elastomer resin layer and a polyolefin layer, wherein the hydrogenated styrene elastomer resin layer is disposed between the optoelectronic device and the polyolefin layer.

Abstract: High voltage array light emitting devices, fixtures and methods are disclosed. In one embodiment a light emitting device can include a submount, a light emission area disposed over the submount and a retention material adapted to be dispensed about the light emission area. The light emitting device can be operable at high voltages which are greater than approximately 40 volts (V). In one aspect, the retention material can be least partially disposed within the light emission area such that the retention material physically separates a first section of the light emission area from a second section of the light emission area.

Abstract: A method includes forming optical lenses on an ICD at the wafer level, rather than attaching a separate lens assembly. The lenses may be formed as an array of individual lenses or as multiple, e.g., two, arrays of individual lenses. The array of lenses may be coupled to an array of ICDs. The ICDs and individual lenses in the array assembly may be singulated to form individual digital camera modules. Additionally or alternatively, the ICDs and individual lenses may be singulated in separate steps.

Abstract: An optical module includes a stem, an optical element, data signal lead pins, a printed circuit board, and a post portion. The optical element is mounted on one surface of the stem. The data signal lead pins are connected to the optical element, and protrudes through the other surface of the stem. The printed circuit board has one surface on which data signal transmission lines for contact with the data signal lead pins are formed and the other surface on a part of which a stiffener is formed to protrude. The post portion protrudes from the other surface of the stem, supports the printed circuit board while in close contact with the stiffener such that the data signal lead pins can contact the data signal transmission lines while being disposed linearly above the data signal transmission lines, and includes a coupling portion to be coupled with the stiffener.

Abstract: Disclosed is a light emitting diode package having a simplified configuration and high color reproducibility. The light emitting diode package includes a package body, first and second light emitting diode chips received in the package body, a lead frame electrically connected to the first and second light emitting diode chips, the lead frame serving to adjust color of light according to the ratio of current of the first and second light emitting diode chips, and a light conversion layer configured to cover the first and second light emitting diode chips, the light conversion layer serving to convert light emitted from the first and second light emitting diode chips into a particular wavelength of light so as to emit a desired wavelength of light.

Abstract: The present application provides an optoelectronic semiconductor device, comprising: a substrate; an optoelectronic system on the substrate; a barrier layer on the optoelectronic system, wherein the barrier layer thickness is not smaller than 10 angstroms; and an electrode on the barrier layer.

Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.

Abstract: A gesture sensing device includes a single light source and a multiple segmented single photo sensor, or an array of photo sensors, collectively referred to herein as segmented photo sensors. A light modifying structure relays reflected light from the light source onto different segments of the segmented photo sensors. The light modifying structure can be an optical lens structure or a mechanical structure. The different segments of the photo sensor sense reflected light and output corresponding sensed voltage signals. A control circuit receives and processes the sensed voltage signals to determine target motion relative to the segmented photo sensor.

Abstract: A method of packaging imager devices and optics modules is disclosed which includes positioning an imager device and an optics module in each of a plurality of openings in a carrier body, introducing an encapsulant material into each of the openings in the carrier body and cutting the carrier body to singulate the plurality of imager devices and optics modules into individual units, each of which comprise an imager device and an optics module. A device is also disclosed which includes an imager device comprising a plurality of photosensitive elements and an optics module coupled to the imager device, the optics module comprising at least one lens that, when the optics module is coupled to the imager device, is positioned a fixed, non-adjustable distance from the plurality of photosensitive elements.

Abstract: A semiconductor light-receiving device includes two lenses; and a concave region, a height of the sidewall being higher than a top of the lenses, a distance between a position H and a lower edge of the sidewall vertical to a line segment C1 being grater than following condition: {(r+L)2?(W/2)2}1/2 where: C1 is a line segment connecting centers of the lenses; H is a midpoint of the C1; r is a radius of the lenses; W is an interval between the centers; and C2 is a lines passing through the centers in a direction vertical to the C1, wherein: the lower edge of the concave portion in an outer side of a region between the C2 is concentrically formed so as to have a distance of (r+L) from the center of the lenses; and W is following condition: W<2 (r+L).

Abstract: A semiconductor arrangement including at least one lead arrangement with a top and a bottom opposite the top; at least one solder resist layer which partially covers the top and the bottom, at least sub-zones of the top and the bottom, which are not covered by the solder resist layer, forming electrical base members; an optoelectronic semiconductor element, which is mounted on at least one of the base members on the top of the lead arrangement and is connected electrically conductively therewith, and an encapsulant applied at least to the top of the lead arrangement, the encapsulant covering up the semiconductor element and lying at least partially against the solder resist layer, wherein the base members are bordered all round by the solder resist layer.

Abstract: Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

Abstract: A photoelectric conversion module includes: a substrate having a light transmitting property and having a mounting surface; a photoelectric conversion element mounted on the mounting surface of the substrate; a cover member fixed to the substrate via a solder layer constituted by solder and forming, cooperatively with the substrate, an airtight chamber housing the photoelectric conversion element; and a solder adsorbing film provided near an area fixed to the substrate by the solder layer, in a surface, of the cover member, facing the mounting surface, the solder having an adhesive property to the solder adsorbing film.

Abstract: Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.