Abstract: A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.

Abstract: An optoelectronic component includes a housing. At least one semiconductor chip is arranged in the housing. The semiconductor chip includes an active layer suitable for producing or detecting electromagnetic radiation. A casting compound at least partially surrounds the semiconductor chip. Reflective particles are embedded in the casting compound.

Abstract: A metal encapsulating sheet is configured to cover a display unit on a substrate and includes an insulating base film, and metal wirings on the base film for forming a current path between the display unit and a power supply, wherein connecting units of the metal wirings coupled to the power supply are outside a light-emitting region corresponding to the display unit.

Abstract: An image sensor device that includes a substrate and a plurality of color filters. The substrate includes a plurality of photo detectors (wherein a first portion of the plurality of photo detectors each has a lateral size that is smaller than that of each of a second portion of the plurality of photo detectors) and a plurality of contact pads which are electrically coupled to the photo detectors. The plurality of color filters are each disposed over one of the photo detectors. The plurality of photo detectors are configured to produce electronic signals in response to light incident through the color filters. A third portion of the plurality of photo detectors are laterally disposed between the first and second portions of the photo detectors, and each having a lateral size between those of the first and second portions of the photo detectors.

Abstract: The invention is directed to providing a semiconductor device receiving a blue-violet laser, of which the reliability and yield are enhanced. A device element converting a blue-violet laser into an electric signal is formed on a front surface of a semiconductor substrate. An optically transparent substrate is attached to the front surface of the semiconductor substrate with an adhesive layer being interposed therebetween. The adhesive layer contains transparent silicone. Since the front surface of the device element is covered by the optically transparent substrate, foreign substances are prevented from adhering to the front surface of the device element. Furthermore, the adhesive layer is covered by the optically transparent substrate. This prevents the adhesive layer from being exposed to outside air, thereby preventing the degradation of the adhesive layer 6 due to a blue-violet laser.

Abstract: A capping system includes: a moving portion moving a stem, on which an optical semiconductor element is mounted, horizontally; a fixer fixing a cap having a window, on the stem; a camera taking an image of the cap and the stem from above the cap and the stem; a detector detecting whether the optical semiconductor element is present within a visual field of the camera; and a searching action controller controlling the moving portion to move the stem so the detector searches the optical semiconductor element. The searching action controller causes searching radially and outwardly from a search starting point.

Abstract: A solid-state imaging apparatus is provided. A solid-state imaging device chip is enclosed in a package having an optically transparent member. An adhesive layer is formed on an internal surface of the package, and a penetration hole is formed in a bottom part of the package to communicate with an open space in the package.

Abstract: A multi-functional optoelectronic apparatus which comprises an integrated circuit (IC) wafer, respective optoelectronic components which has one or more Input port(s) to receive external command signals to drive the optoelectronic apparatus. Examples of some of the optoelectronic apparatus include an IOLED (Input/Output Light Emitting Diode including visible light and invisible light), IOPD (Input/Output Photo Diode), IOPT (Input/Output Photo Transistor), IOLS (Input/Output Light Sensor), IORS (Input/Output Reflective Sensor), IOPI (Input/Output Photo Interrupter) and IORM (Input/Output Receiver Module). The multi-functional optoelectronic apparatus may drive external peripheral(s) such as speakers, motors or other devices.

Abstract: An optoelectonice device package, an array of optoelectronic device packages and a method of fabricating an optoelectronic device package. The array includes a plurality of optoelectronic device packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package including two geometrically parallel transparent edge portions and two geometrically parallel non-transparent edge portions, oriented substantially orthogonal to the transparent edge portions. The transparent edge portions are configured to overlap at least one adjacent package, and may be hermetically sealed. The optoelectronic device portion fabricated using R2R manufacturing techniques.

Abstract: The detection device includes a semiconductor substrate of a first conductivity type. A matrix of photodiodes organized along a first organization axis is formed on the substrate. Each photodiode is at least partially formed in the substrate. A peripheral biasing ring is formed around the photodiode matrix. The biasing ring is connected to a bias voltage generator. An electrically conducting contact is connected to the substrate and arranged between two photodiodes on the first organization axis. The distance separating the contact from each of the two photodiodes is equal to the distance separating two adjacent photodiodes along the first organization axis. The contact is connected to the bias voltage generator.

Abstract: An image pickup lens is provided that includes a substrate; resin layers formed on both respective opposite surfaces of the substrate; a lens portion formed on at least any one of the surfaces of the substrate; and a spacer formed on at least any one of the surfaces of the substrate at an area surrounding the lens portion.

Abstract: A self-aligning hybridization method enabling small pixel pitch hybridizations with self-alignment and run-out protection. The method requires providing a first IC, the surface of which includes at least one electrical contact for connection to a mating IC, depositing an insulating layer on the IC's surface, patterning and etching the insulating layer to provide recesses in the insulating layer above each of the electrical contacts, and depositing a deformable conductive material in each of the recesses. A mating IC is provided which includes conductive pins positioned to align with the deformable conductive material in respective ones of the recesses on the first chip. The first and mating ICs are then hybridized by bringing the conductive pins into contact with the deformable conductive material in the recesses, such that the conductive material deforms and the pins make electrical contact with the first IC's electrical contacts.

Abstract: An example reinforcement structure for protecting a wafer-level camera module includes a top sheet element and a side sheet element. The top sheet element is to be disposed over a top surface of the camera module and includes a first opening for allowing light to pass through to the camera module. The side sheet element is coupled to the top sheet element for securing the reinforcement structure to a printed circuit board (PCB). A second opening in the side sheet element is included to allow an adhesive to be dispensed through the second opening to adhere the reinforcement structure to the camera module.

Abstract: A multichip light-emitting diode (LED) includes a reflective cup, a plurality of light-emitting chips and a package. The light-emitting chips are disposed in the reflective cup and emit light when driven. The package is disposed in the reflective cup and covers the light-emitting chips. The package further has a plurality of lenses corresponding to the light-emitting chips one by one. The lenses refract light emitted by the corresponding light-emitting chips, respectively. An extrinsic light efficiency of the multichip is increased through the design of the multichip LED.

Abstract: A light emitting device includes a base body forming a recess defined by a bottom surface and a side wall thereof, a conductive member whose upper surface being exposed in the recess and whose lower surface forming an outer surface, a protruding portion disposed in the recess, a light emitting element mounted in the recess and electrically connected to the conductive member, and a sealing member disposed in the recess to cover the light emitting element. The base body has a bottom portion and a side wall portion integrally formed of a resin, an inner surface of the side wall portion is the side wall defining the recess and has a curved portion, and the protruding portion is disposed in close vicinity to the curved surface. With this arrangement, a thin and small-sized light emitting device excellent in light extraction efficiency and reliability can be obtained.

Abstract: A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

Abstract: A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.

Abstract: Disclosed is a camera module. The camera module includes a lens assembly including a wafer level optics lens (WLO), and a sensor assembly on which the lens assembly is mounted through a surface mount technology (SMT). In the camera module, a lens is directly mounted on a sensor die through the SMT, so that the manufacturing process can be simplified and the manufacturing cost can be reduced. A height of the camera module is lowered, so that a slim camera module can be realized.

Abstract: A housing for optoelectronic components, such as LEDs, and to a method for producing such a housing are provided. The housing has a base body with an upper surface that at least partially defines a mounting area for at least one optoelectronic functional element, such that the base body provides a heat sink for an optoelectronic functional element. The base body also has a lower surface and a lateral surface. The housing has a connecting body for the optoelectronic functional element, which is joined to the base body at least by a glass layer. The connecting body is arranged at a lateral side of the base body and at least partially extends around a periphery of the base body.

Abstract: The embodiment provides a package structure for a chip and a method for fabricating the same. The package structure for the chip includes a chip having a substrate and a bonding pad structure. The chip has an upper surface and a lower surface. An upper packaging layer covers the upper surface of the chip. A spacer layer is between the upper packaging layer and the chip. A conductive path is electrically connected to the bonding pad structure. An anti-reflective layer is disposed between the spacer layer and the upper packaging layer. An overlapping region is between the anti-reflective layer and the spacer layer.

Abstract: An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.

Abstract: A method of manufacturing a semiconductor device including a first member including a chip mounting region and a peripheral region, a semiconductor chip mounted in the chip mounting region, and a second member fixed to the first member to cover the semiconductor chip, includes adhering, to the second member, the peripheral region of the first member in a state that the semiconductor chip is mounted in the chip mounting region, using an adhesive, and generating a stress between the first member and the second member, after the adhesive starts to cure, to locally form a gap in at least one of a portion between the first member and the adhesive, and a portion between the second member and the adhesive.

Abstract: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.

Abstract: A microelectronic unit includes a semiconductor element having a front surface to which a packaging layer is attached, and a rear surface remote from the front surface. The element includes a light detector including a plurality of light detector element arranged in an array disposed adjacent to the front surface and arranged to receive light through the rear surface. The semiconductor element also includes an electrically conductive contact at the front surface connected to the light detector. The conductive contact includes a thin region and a thicker region which is thicker than the thin region. A conductive interconnect extends through the packaging layer to the thin region of the conductive contact, and a portion of the conductive interconnect is exposed at a surface of the microelectronic unit.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device, including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a silane coupling agent, in which a total content of the ingredient (C) and the ingredient (D) is from 69 to 94% by weight of the whole of the epoxy resin composition, and the ingredient (E) is contained in an amount satisfying the specific conditions.

Abstract: The present invention relates to UV curable encapsulant compositions based on acrylic and/or methacrylic block copolymers, to structures containing these compositions especially photovoltaic cells and to the use of these compositions in photovoltaic cells. The liquid encapsulant composition according to the invention comprises: an acrylic or methacrylic block copolymer, at least one acrylic or methacrylic monomer and/or oligomer, and at least one photo initiator.

Abstract: A plurality of separate lead frames can be insert-molded in a reflector composed of a white resin having a high reflectivity to form a package for an LED device. A cavity is formed in the reflector. The cavity can have an inner circumferential surface that opens wider in an upward direction. Cups can be located in the cavity. Each cup has an outer wall that can be in the form of a cylinder with the bottom formed of each of two separate lead frames. A red LED chip and a green LED chip can be adhesively fixed to the lead frames located on the bottoms of the respective cups. The LED chips can have lower electrodes, which are electrically brought into conduction with the lead frames one by one. The LED chips can also have upper electrodes, which are electrically brought into conduction with the lead frames one by one via bonding wires. A light transmissive resin can be filled in the cavity.

Abstract: An image pickup apparatus includes a semiconductor chip including a light receiving section, a frame-like spacer arranged on the semiconductor chip to surround the light receiving section, a transparent flat plate section arranged on the semiconductor chip via the spacer and having a plan view dimension larger than a plan view dimension of the spacer and smaller than a plan view dimension of the semiconductor chip, and a reinforcing member for filling a gap between the semiconductor chip and the transparent flat plate section on the outer side of the spacer and having a plan view dimension larger than the plan view dimension of the transparent flat plate section and smaller than the plan view dimension of the semiconductor chip.

Abstract: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on the filling material.

Abstract: A resin composition containing a silica-based filler which differs in refractive index by ±0.03 from the curable base resin and has a thermal conductivity no lower than 0.5 W/m·K, and a light-emitting diode encapsulated with said resin composition. The resin composition is preferably prepared from a curable silicone resin which imparts a cured product having a refractive index of 1.45 to 1.55 and cristobalite powder dispersed therein.

Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer located on the second surface of the substrate, wherein the protection layer has an opening; a light shielding layer located on the second surface of the substrate, wherein a portion of the light shielding layer extends into the opening of the protection layer; a conducting bump disposed on the second surface of the substrate and filled in the opening of the protection layer; and a conducting layer located between the substrate and the protection layer, wherein the conducting layer electrically connects the optoelectronic device to the conducting bump.

Abstract: A method of forming a microelectronic assembly includes positioning a support structure adjacent to an active region of a device but not extending onto the active region. The support structure has planar sections. Each planar section has a substantially uniform composition. The composition of at least one of the planar sections differs from the composition of at least one of the other planar sections. A lid is positioned in contact with the support structure and extends over the active region. The support structure is bonded to the device and to the lid.

Abstract: A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a substrate comprising a recess, a light emitting chip on the substrate and a first conductive layer electrically connected to the light emitting chip. And the first conductive layer includes at least one metal layer electrically connected to the light emitting chip on an outer circumference of the substrate.

Abstract: An integrally packaged optronic integrated circuit device including an integrated circuit die containing at least one of a radiation emitter and radiation receiver and having a transparent packaging layer overlying a surface of the die, the transparent packaging layer having an opaque coating adjacent to edges of the layer.

Abstract: A photoelectric conversion device including a first substrate; a second substrate located generally opposite to the first substrate; a first grid pattern located on the first substrate, wherein the first grid pattern includes a first finger electrode; a first collector electrode spaced from the first finger electrode and extending in a direction that intersects the first finger electrode; and a first connecting electrode connecting the first finger electrode and the first collector electrode; and a second grid pattern located on the second substrate, wherein the second grid pattern includes a second finger electrode; a second collector electrode spaced from the second finger electrode and extending in a direction that intersects the second finger electrode; and a second connecting electrode connecting the second finger electrode and the second collector electrode, wherein the first connecting electrode and the second connecting electrode are arranged alternately and do not overlap each other.

Abstract: A photovoltaic cell including: (a) a housing including an at least partially transparent cell wall having an interior surface; (b) an electrolyte, disposed within the cell wall, and containing an iodide based species; (c) a transparent electrically conductive coating disposed on the interior surface; (d) an anode disposed on the conductive coating, the anode including: (i) a porous film containing titania, the porous film adapted to make intimate contact with the iodide based species, and (ii) a dye, absorbed on a surface of the porous film, the dye and the porous film adapted to convert photons to electrons; (e) a cathode disposed on an interior surface of the housing, and disposed substantially opposite the anode; (f) electrically-conductive metallic wires, disposed at least partially within the cell, the wires electrically contacting the anode and the electrically conductive coating, and (g) a second electrically conductive coating including an inorganic binder and an inorganic electrically conductive fill

Abstract: A hermetically sealed integrated circuit package that includes a cavity housing a semiconductor die, whereby the cavity is pressurized during assembly and when formed. The invention prevents the stress on a package created when the package is subject to high temperatures at atmospheric pressure and then cooled from reducing the performance of the die at high voltages. By packaging a die at a high pressure, such as up to 50 PSIG, in an atmosphere with an inert gas, and providing a large pressure in the completed package, the dies are significantly less likely to arc at higher voltages, allowing the realization of single die packages operable up to at least 1200 volts. Moreover, the present invention is configured to employ brazed elements compatible with Silicon Carbide dies which can be processed at higher temperatures.

Abstract: This invention discloses a laminated film comprising two thermoplastic polyester outer layers of identical polytrimethylene terephthalates, different polytrimethylene terephthalates, identical blends of polytrimethylene terephthalate or different blends of polytrimethylene terephthalate and a middle layer selected from a metal foil, polyethylene-vinyl acetate, and a thermoplastic polymer comprising thermoplastic polyester different from the thermoplastic polyester of the two outer layers, wherein the middle layer is laminated between the two outer layers. This invention also discloses a solar panel comprising a back sheet made of the laminated film.

Abstract: A package including an electrical circuit may be produced in a more efficient manner when on a substrate including a plurality of electrical circuits the circuits are tested for their functionality and when the functional circuits are connected, by means of a frame enclosing the circuit on the surface of the substrate, to a second substrate whose surface area is smaller than that of the first substrate. The substrates are connected, by means of a second frame, which is adapted to the first frame and is located on the surface of the second substrate, such that the first and second frames lie one on top of the other. Subsequently, the functional packaged circuits may be singulated in a technologically simple manner.

Abstract: A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.

Abstract: The present invention discloses a light-emitting diode (LED) package structure, which includes a housing, a first electrode plate, a second electrode plate, a light-emitting diode, and a voltage regulation diode. The housing has a top surface forming a cavity, and the cavity contains therein a wall that divides the cavity into a light emission section and a voltage regulation section. By separately arranging the light-emitting diode and the voltage regulation diode in two different sections of the light emission section and the voltage regulation section, the present invention prevents the voltage regulation diode from affecting light flux of the light-emitting diode by absorbing light, thereby enhancing overall lighting performance of the LED package structure.

Abstract: The present invention discloses a wafer level image sensor packaging structure and a manufacturing method for the same. The manufacturing method includes the following steps: providing a silicon wafer with image sensor chips, providing a plurality of transparent lids, allotting one said transparent lid on top of the corresponding image sensor chip, and carrying out a packaging process. The manufacturing method of the invention has the advantage of having a simpler process, lower cost, and higher production yield rate. The encapsulation compound arranges on the first surface of the image sensor chip and covers the circumference of the transparent lid to avoid the side light leakage as traditional chip scale package (CSP). Thus, the sensing performance of the wafer level image sensor packaging structure can be enhanced.

Abstract: Provided are a camera modules. The camera module includes a lens unit including a lens unit; a holder coupled to the lens unit; an image sensor for converting a light through the lens into an electric signal; and a ceramic board coupled to the holder, the ceramic board having a concave portion where the image sensor is inserted. Another camera module includes a lens unit including a lens barrel; a holder including an infrared ray (IR) cut off filter, the holder being coupled to the lens unit; an image sensor for converting a light through the lens into an electric signal; a ceramic board coupled to the holder, one surface of the ceramic board having a first concave portion; and an image signal processor (ISP) inserted into the first concave portion. Another camera module includes a lens unit including at least one lens; and a ceramic board coupled to the lens unit; the ceramic board including an image sensor and an IR cut off filter; wherein the image sensor is inserted into the ceramic board.

Abstract: An optoelectronic package includes a substrate and a cover element bonded onto the substrate. The cover element defines a cavity for accommodating semiconductor chips and optoelectronic components. The cover element includes a first adhesive bonding area configured for receiving a first adhesive and being bonded with a predetermined region of the substrate by the first adhesive. The engagement of the cover element and the substrate defines a second adhesive bonding area. The second adhesive bonding area is configured for receiving a second adhesive and confining the second adhesive within a localized area. A method for making an optoelectronic package is also provided.

Abstract: Disclosed is a semiconductor device having overlapped via apertures formed in an encapsulant to outwardly expose solder balls. When different types of semiconductor devices are electrically connected to the solder balls through the overlapped via apertures, flux or solder paste is unlikely to contact sidewall portions of the overlapped via apertures. Therefore, different types of semiconductor devices can be mounted with improved efficiency.

Abstract: The purpose is the overall miniaturization of a product in which a semiconductor module is mounted. Provided is a semiconductor module including a first semiconductor chip that has an optical element, second semiconductor chip that is mounted over the first semiconductor chip, a casing having an opening, the first semiconductor chip and the second semiconductor chip being accommodated inside the casing and the opening being at a position corresponding to the optical element, and a light-transmitting cover that closes the opening of the casing. In the above-mentioned structure, the second semiconductor chip is provided with a reflection suppressing function.

Abstract: In accordance with the present invention, there is provided a CPV module wherein a solder paste is used as an alternative to wire bonds or braided ribbon/mesh connectors to facilitate the electrical connectivity between the concentrated photovoltaic receiver cell or die of the CPV module and the conductive pattern of the underlying substrate thereof. In accordance with the present invention, the possibility of accidentally shorting the top of the receiver die with the other metal parts of the CPV module is avoided by molding at least the periphery of the receiver die with a mold body, and then dispensing or printing the conductive paste between the top of the receiver die and the substrate, the mold body defining a reservoir which facilities the flow of the conductive paste in a prescribed pattern.

Abstract: In order to collect a plurality of semiconductor elements easily from a semiconductor module where a plurality of rod-like semiconductor elements for power generation or light emission are built in and to reuse or repair them, two split modules 61 are arranged in series in a containing case 62 in a semiconductor module 60. In each split module 61, power generating semiconductor elements 1 arranged in a matrix of a plurality of rows and columns, and a conductive connection mechanism for connecting the plurality of semiconductor elements 1 in each row in series and the plurality of semiconductor elements 1 in each column in parallel are molded with transparent synthetic resin, and a connection conductor 67 is allowed to project at the end. A conductive waved spring 70 and an external terminal 76 are provided on the end side of the containing case 62, and series connection of the two split modules 61 is ensured by mechanical pressing force of the conductive waved spring 70.