Abstract: In one example, a method comprises: exposing a first photodiode to incident light to generate first charge; exposing a second photodiode to the incident light to generate second charge; converting, by a first charge sensing unit, the first charge to a first voltage; converting, by a second charge sensing unit, the second charge to a second voltage; controlling an ADC to detect, based on the first voltage, that a quantity of the first charge reaches a saturation threshold, and to measure a saturation time when the quantity of the first charge reaches the saturation threshold; stopping the exposure of the first photodiode and the second photodiode to the incident light based on detecting that the quantity of the first charge reaches the saturation threshold; and controlling the ADC to measure, based on the second voltage, a quantity of the second charge generated by the second photodiode before the exposure ends.

Abstract: A image sensor includes a first integrated circuit layer including pixel sensors that are grouped based on position into pixel sensor groups, a second integrated circuit layer in electrical communication with the first integrated circuit layer, the second integrated circuit layer including image processing circuitry groups that are configured to each receive pixel information from a corresponding pixel sensor group, the image processing circuitry groups further configured to perform image processing operations on the pixel information to provide processed pixel information during operation of the image sensor, a third integrated circuit layer in electrical communication with the second integrated circuit layer, and the third integrated circuit layer including neural network circuitry groups that are configured to each receive the processed pixel information from a corresponding image processing circuitry group and perform analysis for object detection on the processed pixel information during operation of the

Abstract: In one example, a semiconductor device comprises a substrate comprising a top side, a bottom side, and a conductive structure, a body over the top side of the substrate, an electronic component over the top side of the substrate and adjacent to the body, wherein the electronic component comprises an interface element on a top side of the electronic component, a lid over the interface element and a seal between the top side of the electronic component and the lid, and a buffer on the top side of the substrate between the electronic component and the body. Other examples and related methods are also disclosed herein.

Abstract: A CMOS image sensor (CIS) package includes a package substrate, a CIS chip arranged on an upper surface of the package substrate and electrically connected with the package substrate, a glass arranged over the CIS chip, and an adhesive layer interposed between an edge portion of an upper surface of the CIS chip and an edge portion of a lower surface of the glass to attach the glass to the CIS chip. An interlocking recess is provided to at least one of the CIS chip and the glass, and the adhesive layer comprises an interlocking protrusion inserted into the interlocking recess.

Abstract: One embodiment comprises a circuit board including a mounting groove, an image sensor arranged within the mounting groove of the circuit board, and a first epoxy arranged within the mounting groove, wherein the mounting groove comprises a first side surface and a second side surface that face each other, and a third side surface and a fourth side surface that face each other, the circuit board includes at least one application groove provided on the first side surface and/or the second side surface of the mounting groove, the at least one application groove includes an opening opened toward the upper surface of the circuit board, and at least a portion of the first epoxy is arranged in the at least one application groove.

Abstract: An image sensor package includes a package substrate; an image sensor chip disposed on the package substrate; a dam structure disposed on the image sensor chip and including a dam main body having an opening and a first light absorption layer disposed on an inner wall of the dam main body; a transparent substrate on the dam structure; and an encapsulant contacting the image sensor chip and an outer wall of the dam main body.

Abstract: Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side and an active area on the second side of the die. The semiconductor packages may also include two or more bumps coupled to two or more die pads on a second side of the die. The semiconductor packages may include an optically transmissive lid coupled to the semiconductor die through an adhesive, two or more bumps, and a first redistribution layer (RDL). The semiconductor package may include a second redistribution layer (RDL) coupled with the first RDL on the second side of the semiconductor die. The second RDL may extend to the first side of the semiconductor die. The first RDL may extend to an edge of the semiconductor die.

Abstract: [Object] To provide a sheet-like structure capable of highly accurately estimating a sheet-like shape. [Solving Means] A sheet-like structure includes a sheet-like member and a plurality of detection sensors. The sheet-like member extends along an in-plane direction orthogonal to a thickness direction and receives light incident on the sheet-like member. The plurality of detection sensors are dispersedly arranged on the sheet-like member along the in-plane direction and are for detecting an incident angle of the light with respect to the sheet-like member at each arrangement position of the plurality of detection sensors.

Abstract: Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side. A first side of an optically transmissive lid may be coupled to the second side of the semiconductor die through one or more dams. The packages may also include a light block material around the semiconductor package extending from the first side of the semiconductor die to a second side of the optically transmissive lid. The package may include an opening in the light block material on the second side of the optically transmissive lid that substantially corresponds with an active area of the semiconductor die.

Abstract: The inventive concept discloses a solar cell and a method for manufacturing the same. The solar cell includes a semiconductor substrate, an emitter layer disposed on one surface of the substrate, and a cooling layer disposed on one surface of the emitter layer, and the cooling layer absorbs a far-infrared ray from irradiated sunlight and emits a wavelength of the absorbed far-infrared ray.

Abstract: Embodiments are generally directed to a buried electrical debug access port. An embodiment of an apparatus includes a substrate or printed circuit board; one or more electronic components coupled with the substrate or printed circuit board; one or more electrical access ports coupled with the substrate or printed circuit board, each electrical access port including electrically conductive material; and an encapsulant material, the encapsulant material encapsulating the one or more access ports, wherein the one or more access ports are electrically connected to one or more circuits of the apparatus to provide debugging access to the apparatus.

Abstract: A fingerprint recognition package may include a circuit board; an image sensor die attached and electrically connected to the circuit board; a light-shielding member applied to the circuit board; and an adhesive member attached to one side of the light-shielding member. The light-shielding member can be cured by being irradiated with ultraviolet rays, and can be thermoset by being irradiated with heat.

Abstract: A camera module according to the present invention may comprise: a barrel that accommodates a lens therein; a printed circuit board formed under the barrel and mounted with an image sensor; a body portion integrally formed with the barrel; a holder comprising a leg portion formed by being extended downward from the lower end of the body portion to the same height as the image plane of the lens; and a fixing portion formed downward from the leg portion to have a predetermined thickness to fix the holder to the printed circuit board, wherein the thickness of the fixing portion may be equal to the height from the upper surface of the printed circuit board to the image plane of the image sensor.

Abstract: A sensor may include a light source, a light detector, and a housing. The housing may have a first upper side and extend from the first upper side, a first cavity and a second cavity. The light detector is arranged in the first cavity. The light source is arranged in the second cavity. A strut may be arranged between the first cavity and the second cavity and is made from a material that absorbs or reflects light. A first cover may be mounted above the first cavity and comprises a deflection region and a plane of incidence. The deflection region is designed such that 80% of the light which is incident in the deflection region on the plane of incidence of the first cover from a predetermined direction and which is incident on the light detector, is directed away from the light detector based on an optical element.

Abstract: A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

Abstract: Apparatus for providing optical radiation (15), which apparatus comprises an optical input (13), a coupler (2), a first semiconductor amplifier (3), a controller (4), a preamplifier (61), a power amplifier (62) and an output fibre (5), wherein: the optical input (13) is for receiving input optical radiation (14); the optical input (13) is connected in series to the coupler (2), the first semiconductor amplifier (3), the preamplifier (61), the power amplifier (62), and the output fibre (5); the apparatus being characterized in that: the first semiconductor amplifier (3) comprises a waveguide (6) having a low reflecting facet (8); the first semiconductor amplifier (3) is in a double pass configuration such that the low reflecting facet (8) is connected to both the optical input (13) and the preamplifier (61) via the coupler (2); and the controller (4) is configured to cause the waveguide (6) of the first semiconductor amplifier (3) to operate in saturation thereby enabling the first semiconductor amplifier (3)

Abstract: An optical sensor package includes an IC die including a light sensor element, an output node, and bond pads including a bond pad coupled to the output node. A leadframe includes a plurality of leads or lead terminals, wherein at least some of the plurality of leads or lead terminals are coupled to the bond pads including to the bond pad coupled to the output node. A mold compound provides encapsulation for the optical sensor package including for the light sensor element. The mold compound includes a polymer-base material having filler particles including at least one of infrared or terahertz transparent particle composition provided in a sufficient concentration so that the mold compound is optically transparent for providing an optical transparency of at least 50% for a minimum mold thickness of 500 ?m in a portion of at least one of an infrared frequency range and a terahertz frequency range.

Abstract: This relates to one or more integrated photodiodes on a back surface of a PPG device. The one or more integrated photodiodes can reduce the gap between one or more windows and the active area of the photodiode(s) to increase the PPG signal strength without affecting the depth of light penetration into skin tissue. In some examples, the photodiode stackup can contact the surface of the windows. In some examples, the photodiode stackups can exclude a separate substrate. In some examples, the photodiode stackup can be deposited on the inner surface of the windows opposite the outer surface of the device. In some examples, the photodiode stackup can be deposited on the back surface and/or outer surface of the device. In this manner, PPG sensors can be included in the device without the need for extra layers and measurement accuracy can be improved due to lower light loss.

Abstract: A display assembly of an electronic device, the electronic device, and a method for manufacturing the display assembly are provided. The electronic device includes a display assembly and a camera module. The display assembly includes a cover plate, a display panel, and a backlight module that are sequentially stacked together. The cover plate has a light transmitting region, and the light transmitting region corresponds to a display region of the display panel. The display region of the display panel defines a first mounting through hole. The first mounting through hole is provided with a light blocking layer on a hole wall of the first mounting through hole, and an end of the light blocking layer close to the cover plate is attached to the light transmitting region.

Abstract: A cover for an electronic circuit package, including: a body having an opening extending therethrough; a first element located in the opening and having a surface continuing planar or rounded shapes of a surface of the cover; and a second element of connection of the first element to the body.

Abstract: A portable electronic device and an image-capturing module thereof are provided. The image-capturing module includes a circuit substrate, an image-capturing chip, a plurality of first conductive materials, a filter component, a plurality of second conductive materials, and a lens assembly. The circuit substrate includes a plurality of substrate bond pads. The image-capturing chip includes a plurality of chip bond pads. The first conductive materials are respectively disposed on the chip bond pads. The filter component is disposed on the first conductive materials, and the filter component includes a light-transmitting body and a plurality of conductive structures disposed on the light-transmitting body and respectively electrically connected to the first conductive materials. Each of the second conductive materials is electrically connected between the corresponding conductive structure and the corresponding substrate bond pads.

Abstract: A fingerprint sensor package includes a package substrate including an upper surface in which a sensing region and a peripheral region surrounding the sensing region are defined, and a lower surface facing the upper surface; a plurality of first sensing patterns located are arranged in the sensing region, are apart from each other in a first direction, and extend in a second direction crossing the first direction; a plurality of second sensing patterns that are arranged in the sensing region, are apart from each other in the second direction, and extend in the first direction; a coating member covering the sensing region; an upper ground pattern in the peripheral region and apart from the coating member to surround the coating member in the first and second directions; and a controller chip on the lower surface of the package substrate; and a plurality of capacitors.

Abstract: Implementations of a molded image sensor chip scale package may include an image sensor having a first side and a second side. A first cavity wall and a second cavity wall may be coupled to the first side of the image sensor and extend therefrom. The first cavity wall and the second cavity wall may form a cavity over the image sensor. A transparent layer may be coupled to the first cavity wall and the second cavity wall. A redistribution layer (RDL) may be coupled to the second side of the image sensor. At least one interconnect may be directly coupled to the RDL. A mold material may encapsulate a portion of the RDL, a portion of the image sensor, and a side of each cavity wall, and a portion of the transparent layer.

Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.

Abstract: Various embodiments of fanout packages are disclosed. A method of forming a microelectronic assembly is disclosed. The method can include bonding a first surface of at least one microelectronic substrate to a surface of a carrier using a direct bonding technique without an intervening adhesive, the microelectronic substrate having a plurality of conductive interconnections on at least one surface of the microelectronic substrate. The method can include applying a molding material to an area of the surface of the carrier surrounding the microelectronic substrate to form a reconstituted substrate. The method can include processing the microelectronic substrate. The method can include singulating the reconstituted substrate at the area of the surface of the carrier and at the molding material to form the microelectronic assembly.

Abstract: A sensor comprises a microfabricated chip having a surface with one or more cavities formed thereon, the cavities including sensing components, one or more lids, each covering said surface so as to close at least one of said cavities, the lids contacting rims that delimit said cavities on said surface. Electric circuit portions join, each, a respective one of the lids, to allow the lids to be partly dissolved, electrochemically, responsive to being exposed to an electrochemical solution. In addition, masking material portions cover peripheral regions of the lids at the level of the rims, so as to seal the lids and shield such peripheral regions from said electrochemical solution, in operation. Related apparatuses and sensing methods may be provided.

Abstract: Implementations of image sensor packages may include an image sensor chip, a first layer including an opening therethrough coupled to a first side of the image sensor chip, and a optically transmissive cover coupled to the first layer. The optically transmissive cover, the first layer, and the image sensor chip may form a cavity within the image sensor. The image sensor package may also include at least one electrical contact coupled to a second side of the image sensor chip opposing the first side and an encapsulant coating an entirety of the sidewalls of the image sensor package.

Abstract: An image sensor package and a manufacturing method thereof are provided. The image sensor package includes a redistribution circuit structure; an image sensing chip disposed on the redistribution circuit structure and having a sensing surface, on which a sensing area and a first conductive pillar arranged in the periphery of the sensing area are disposed; a lid covering the sensing area; an encapsulant disposed on the redistribution circuit structure and encapsulating at least part of the image sensing chip and the cover; and a top tier semiconductor chip disposed above the image sensing chip and having an active surface on which a first conductor is disposed. The first conductor overlaps the image sensing chip in a direction perpendicular to the sensing surface. The first conductive pillar and the first conductor are aligned and bonded to each other to electrically connect the image sensing chip and the top tier semiconductor chip.

Abstract: A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.

Abstract: An array imaging module includes at least two optical lenses and a molded photosensitive assembly, wherein the molded photosensitive assembly includes at least two photosensitive units, a circuit board that electrically couples to the photosensitive units, and a molded base having at least two optical windows. The molded base is integrally coupled at the circuit board at a peripheral portion thereof, wherein the photosensitive units are aligned with the optical windows respectively. The optical lenses are located along two photosensitive paths of the photosensitive units respectively, such that each of the optical windows forms a light channel through the corresponding photosensitive unit and the corresponding optical lens.

Abstract: A method for forming a semiconductor package is disclosed herein. The method includes forming a package substrate having a first major surface and a second major surface opposite to the first major surface. The package substrate includes a recess region below the first major surface defined with a die region and a non-die region surrounding the die region. A semiconductor die is disposed in the die region within the recess region. A dam structure is disposed within the recess region. The dam structure surrounds the semiconductor die and extends upwardly to a height below the first major surface of the package substrate. The method also includes dispensing a liquid encapsulant material into the recess region. The liquid encapsulant material is surrounded by the dam structure and extends upwardly to a height below the height of the dam structure. A package lid is attached to the package substrate.

Abstract: An electronic device includes a carrier wafer having a front side and a back side, with an electrical connection network configured to connect the front side to the back side. An electronic chip is mounted on the front side of the carrier wafer and electrically connected to front pads of the electrical connection network. A sheet of a thermally conductive graphite or a pyrolytic graphite is added to the back side of the carrier wafer. The sheet includes apertures which leave back pads of the electrical connection network uncovered.

Abstract: A microelectromechanical microphone includes: a substrate; a sensor chip, integrating a microelectromechanical electroacoustic transducer; and a control chip operatively coupled to the sensor chip. In one embodiment, the sensor chip and the control chip are bonded to the substrate, and the sensor chip overlies, or at least partially overlies, the control chip. In another embodiment, the sensor is bonded to the substrate and a barrier is located around at least a portion of the sensor chip.

Abstract: A device chip for mounting on a board is provided. The device chip includes a top surface, an undersurface located on an opposite side from the top surface and having a larger area than the top surface, a slope inclined with respect to the top surface and the undersurface and exposed to the top surface side, a circuit portion on the top surface side, the circuit portion including an electronic circuit, and a wiring portion on which wiring electrically connecting the circuit portion and the board to each other is to be formed, the wiring portion including the slope in a part of the wiring portion.

Abstract: An organic light emitting diode display includes a substrate, a plurality of pixels disposed on the substrate, a plurality of transmissive windows spaced apart from the pixels, and a light blocking member disposed between one of the pixels and one of the transmissive windows. The pixels display an image, and light is transmitted through the transmissive windows. Each pixel includes a transistor including a plurality of electrode members disposed in different layers on the substrate. The light blocking member includes a plurality of light blocking sub-members respectively disposed in the same layers as the plurality of electrode members.

Abstract: A camera module includes a circuit board, an optical lens, an insulating member, a photosensitive sensor, and an integral encapsulating support structure. The insulating member is disposed on the periphery of a photosensitive area of the photosensitive sensor to prevent the photosensitive sensor from contacting to and being damaged by the formation mold during the forming process of the integral encapsulating support structure and to prevent the fluid material from flowing to the photosensitive area of the photosensitive sensor.

Abstract: A camera device with anti-ghosting and anti-flare properties includes a printed circuit board; an image sensor mounted on the printed circuit board; and a supporting bracket fixed on the printed circuit board. The supporting bracket includes a supporting plate and perpendicular side wall. The supporting plate and the side wall together form a receiving room covering the image sensor, the supporting plate is opened to form a step portion. The step portion comprises a matte top bearing surface, and a protecting sheet fixed on the matte top bearing surface.

Abstract: There are disclosed herein various implementations of a photodiode including a silicon substrate, and an N type germanium region situated over the silicon substrate, the N type germanium region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situated over the N type germanium region, the P type germanium region being an anode of the photodiode. The photodiode also includes a P type silicon cap over the P type germanium region, an anode contact of the photodiode situated on the P type silicon cap, and one or more cathode contacts of the photodiode electrically connected to the N type germanium region.

Abstract: There is provided a fingerprint sensor module comprising a fingerprint sensor device comprising a sensing array and at least one connection pad for electrically connecting the fingerprint sensor device to external circuitry, the sensing array and connection pad being located on a first side of the fingerprint sensing device; at least one electrically conductive via connection arranged adjacent to the fingerprint sensor device and in electrical contact with the connection pad via at least one conductive trace located in the same plane as the connection pad; a mold layer arranged to cover a backside of the fingerprint sensor device and to fill a volume between the fingerprint sensor device and the via connection, wherein an end portion of the via connection is exposed for connecting the fingerprint sensor module to external circuitry. There is also provided a method for manufacturing such a fingerprint sensor module.

Abstract: A light-emitting device includes a light-emitting element mounted on a base substrate, a reflective member that is formed on the base substrate and surrounds the light-emitting element, a transparent member that has a flat upper surface and is placed to cover above the light-emitting element, and a DBR film placed on the upper surface of the transparent member. A relation between an incident angle of light emitted from the light-emitting element and input into the DBR film and a transmittance of the light to pass through the DBR film is obtained such that a peak of the transmittance is in a range of the incident angle greater than 0°.

Abstract: A fan-out sensor package includes: a substrate in which a through-hole is formed and portions of a wiring layer are exposed from an insulating layer; an image sensor having an active surface having a sensing region disposed below the through-hole of the substrate and connection pads disposed in the vicinity of the sensing region; an optical member disposed on the active surface of the image sensor; a dam member disposed in the vicinity of the sensing region; and an encapsulant encapsulating the substrate and the image sensor, wherein the third wiring layer and the connection pads are electrically connected to each other by connection members.

Abstract: An organic thin film transistor comprises a base material, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, and further comprises charge injection layers which are provided between the source electrode and a base material side layer of the source electrode and between the drain electrode and a base material side layer of the drain electrode and have a thickness that decreases in a direction opposite to a direction in which the source electrode and the drain electrode face each other on a side of the source electrode facing the drain electrode and a side of the drain electrode facing the source electrode, and is manufactured by scanning a metal layer with a laser so as to form the source electrode and the drain electrode, and dropwise-adding a solution which becomes the charge injection layers to a laser-scanned portion.

Abstract: An imaging apparatus includes a lens barrel unit, an image sensor substrate having an image sensor, a metal plate to which an image sensor substrate is fixed, a lens barrel holder made of a metal material and configured to support the lens barrel unit, a third cover member made of a heat-conductive resin material fixed to the lens barrel holder and configured to cover the circumferential surface of the lens barrel unit, and a heat-conductive member configured to conduct heat of an image sensor sheet metal to the lens barrel holder. At least a part of the lens barrel holder is disposed inside the third cover member.

Abstract: A temperature-stabilized MEMS device in which heat is generated by ohmic heating as an electric current passes through at least part of one of the structural layers of the device. Various implementation options are disclosed in which the heating occurs in a device layer (25) of the device, either in an outer frame (2) or within the area of an active structure (3), or where heating occurs within a substrate (1) or a cover (8) of the device. One application of particular relevance is a gyroscope device.

Abstract: The invention relates to a bidirectional wireless communication device which is based on the use of light, including emitting modules, each emitting amplitude- and/or phase-modulated light; and a receiving module made up of: a photodetector illuminated by said modulated light and generating a modulated electrical signal in response to said modulated light; and a processing module for processing the signal generated by said photodetector. The receiving module includes an electronic means positioned between the photodetector and the signal-processing module and capable of matching the impedance of the photodetector to maximise the signal-to-noise ratio of the electrical signal by minimising distortions of said electronic signal associated with incorrect impedance matching at the output of the photodetector, while maximising the level of the modulated electrical signal and the throughput of transmitted data.

Abstract: An image sensor module includes an interposer substrate having a first surface and a second surface opposite to the first surface, the interposer substrate being light-transmissive and having a plurality of through-holes; an image sensor located to face the first surface of the interposer substrate, the image sensor having a light receiving surface on a side of the interposer substrate, a plurality of photoelectric conversion elements being located at the light receiving surface, the image sensor being connected with an external circuit via electrodes provided in the plurality of through-holes; and a lens unit located to face the second surface of the interposer substrate.

Abstract: An optical sensor module and a sensor chip thereof are provided. The optical sensor module includes a substrate, a sensor chip and a passive chip. The sensor chip is disposed on the substrate, and the sensor chip includes a chip body having an active region located at a top side thereof and a recess portion depressed from a top surface of the chip body. The passive chip is accommodated in the recess portion, and a depth of the recess portion is greater than a thickness of the passive chip.

Abstract: An array imaging module includes at least two optical lenses and a molded photosensitive assembly, wherein the molded photosensitive assembly includes at least two photosensitive units, a circuit board that electrically couples to the photosensitive units, and a molded base having at least two optical windows. The molded base is integrally coupled at the circuit board at a peripheral portion thereof, wherein the photosensitive units are aligned with the optical windows respectively. The optical lenses are located along two photosensitive paths of the photosensitive units respectively, such that each of the optical windows forms a light channel through the corresponding photosensitive unit and the corresponding optical lens.

Abstract: A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle ?1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle ?2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

Abstract: A fan-out sensor package includes: a first interconnection member having a through-hole; a sensor disposed in the through-hole of the first interconnection member and having an active surface having connection pads and microlenses disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the active surface or the inactive surface of the sensor; and a second interconnection member disposed on the first interconnection member and the inactive surface or the active surface of the sensor. The first interconnection member and the second interconnection member include, respectively, redistribution layers electrically connected to the connection pads of the sensor. A camera module includes the fan-out sensor package.