Abstract: A planar photosensitive device, such as an array of APDs, includes a planar block of n type semiconductor material having a plurality of p type wells in the block surrounded by a foundation of n type semiconductor material. Each p type well corresponds to an APD pixel and is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the p type material in the well and the n type material foundation. Each APD pixel further comprises depletion layer profile modification means such that the peak surface electric field of the p-n junction in each well is substantially less than the bulk electric field of the same p-n junction.

Abstract: A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.

Abstract: A photodiode structure for the detection of radiation comprises a semiconductor base layer of p-type conductivity with a high doping density, an epitaxial layer of p-type conductivity with a relatively low doping density, areas of n-type conductivity and oxide layers covering the areas of n-type conductivity. The oxide layers comprise doping impurities of the same conductivity type as the areas below them. The doping density in the areas of n-type conductivity decrease towards the junction with the epitaxial layer. Due to this decrease in doping density, an electric field gradient is produced which guides the charge carriers to the junction. The generation of a field gradient and the creation of a surface charge result in an improved quantum efficiency. The invention is preferably used in photodiode arrays.

Abstract: An optical semiconductor includes a photo diode integrated with a transistor built on first and second epitaxial layers grown of intrinsic material on a lightly doped substrate. A separating area divides the optical semiconductor into first and second isolated islands. The separating area is made up of a three separating areas, united end to end to form a single separating area. The first separating area is diffused at least upward from an interface between the substrate and the first epitaxial area. The second separating area is diffused both downward and upward from an interface between the first and second epitaxial layers. The third separating area is diffused downward from the surface of the second epitaxial layer into the substrate. The photo diode is formed in the first island area, and the transistor is formed in the second island area. An offsetting layer in the surface of the substrate, at least below the first island, is counterdoped to expand the depth of the depletion layer of the photo diode.

Abstract: This invention relates to a monolithic IC having a PIN photodiode and an n-p-n bipolar transistor formed on a single semiconductor (silicon) substrate. In fabricating such IC, it is important to electrically isolate the photodiode and the bipolar transistor. In addition it is necessary to make the surface of the substrate flat. According to this invention, the inter-device isolation between the above-described two devices is attained by forming two epitaxial layers on the silicon substrate, forming trenches in the layers, and burying silicon dioxide in the trenches. In the monolithic IC according to this invention wiring capacity is small, and high-speed performance becomes possible. A p-type buried-layer is formed below the bipolar transistor to thereby prevent punch through between the bipolar transistor and other devices. Also this invention provides the process for fabricating a planar type bipolar transistor suitable to fabricate the monolithic IC and also provides a PIN photodiode of a new structure.

Abstract: A vertical semiconductor radiation detector structure is described in which a suction diode, formed by deposition of p+ on a substrate or epitaxial layer and subsequent up-diffusion during epitaxial layer deposition, surrounds the active area of the radiation detector. The suction diode removes the slow diffusion currents thereby reducing the settling time of the radiation detector to an acceptable level.

Abstract: A solid state imaging device capable of efficiently collecting incident light onto its photodetecting portions and a method for manufacturing the device are provided. A plurality of photodetecting portions and an electric charge transfer portion are formed on a surface of a semiconductor substrate, and a flattening layer which has a light transmitting property and serves to cover the plural number of photodetecting portions and the electric charge transfer portion are formed. A partition wall material layer for covering the flattening layer is formed, and a plurality of approximately rectangular regions of the partition wall material layer are removed to form a partition wall. Then, a thermosoftening resin layer which has a light transmitting property and serves to cover the flattening layer and the partition wall is formed.

Abstract: A semiconductor light emitting element in which light leakage from the vicinity of an active layer end thereof is significantly reduced, and an interval at which the element is disposed is sufficiently narrow, so that there can be realized an optimal distance-measuring accuracy when used for a light source of a camera's automatic focusing mechanism.

Abstract: A dielectrically isolated photodiode having an increased p-n junction size with improved photo-carrier collection efficiency. The photodiode comprises a first layer of semiconductor material formed on the bottom and the walls of an isolation region; a second layer of semiconductor material formed on the first layer. The second layer forming a first p-n junction with the first layer and having opposite conductivity type compared to that of the first layer. The photodiode also comprises a third layer of semiconductor material formed on the second layer and electrically coupled to the first layer. The third layer having the same conductivity type as the first layer and forming a second p-n junction with the second layer. During operation, the first p-n junction functions to collect photo-generated carriers that extend to the bottom and walls of the isolation region, thereby increasing the active collecting p-n junction area per isolation region area to improve efficiency of the photodiode.

Abstract: The present invention discloses a light-receiving element, and method for making same, for a charge storage light sensor having a first semiconductor later of a first conductive type with an element isolation region disposed thereon. The element isolation regions are formed to produce tilted edges embedded within the first semiconductor layer and to also produce an embedded region of a second conductive type. The embedded region is effective to collect the photoelectric current resulting from light exposure to the first semiconductor layer regions upon the application of a reverse bias potential to the embedded region.

Abstract: An image sensor comprising a plurality of photo-electric conversion elements formed by layering a metal electrode, a photo-electric conversion layer, and a translucent electrode, the translucent electrode being divided into individual electrodes which are provided for the respective photo-electric conversion elements, and wherein at least the surfaces of the photo-electric conversion layer adjoining the translucent electrodes which appear between the individual electrodes are removed.

Abstract: A shift register according to the present invention includes: a plurality of first electrodes; at least one second electrode; a voltage application unit for applying a voltage to each of the plurality of first electrodes; a plurality of optically bistable elements connected to each of the plurality of first electrodes and at least one second electrode; and an optical waveguide layer for optically coupling the plurality of optically bistable elements to each other.

Abstract: A photoelectric conversion device has a plurality of photoelectric conversion cells, each cell having a semiconductor transistor comprising two main electrode regions made of one conductive type semi-conductor and a control electrode region made of another conductive type semiconductor and a capacitor for controlling the control electrode region at a floating state, the potential at the control electrode region at a floating state being controlled by means of the capacitor so that carriers generated by light are stored in the control electrode region and the output of each cell is controlled in accordance with the storage voltage generated by the storage.

Abstract: A bolometer for detecting radiation in a spectral range is described herein. The bolometer includes an integrated circuit substrate 122 and a pixel body 120 spaced from the substrate 122 by at least one pillar 124. The pixel body 120 comprises an absorber material 132, such as titanium for example, for absorbing radiation in the spectral range, which may be 7 to 12 microns for example. The absorber material 132 heats the pixel body 120 to a temperature which is proportional to the absorbed radiation. An insulating material 134 is formed over the absorber material 132. In addition, a variable resistor material 136, possible amorphous silicon for example, with an electrical resistance corresponding to the temperature of the pixel body 120 is formed over said insulating layer 134. A current flows through the variable resistor material 136 substantially parallel to the integrated circuit substrate 122 for detection. Other systems and methods are also disclosed.

Abstract: An optical semiconductor includes a photo diode integrated with a transistor built on first and second epitaxial layers grown on a substrate, the first epitaxial layer is grown on the substrate from intrinsic material. The second epitaxial layer is grown doped on the first epitaxial layer. A separating area divides the optical semiconductor into first and second isolated islands. The separating area is made up of a lower separating area, a middle separating area and an upper separating area united to form a single separating area. The lower separating area is diffused at least upward from an interface between the substrate and the first epitaxial area. The middle separating area is diffused both downward and upward from an interface between the first and second epitaxial layers. The upper separating area is diffused downward from the surface of the second epitaxial layer. The photo diode is formed in the first island area, and the transistor is formed in the second island area.

Abstract: In a semiconductor image sensor device comprising arrayed photo-sensors, a connection electrode used for connecting an external circuit or an aperture on the connection electrode is provided at an opposite side surface to an illuminated surface, and a transparent substrate is provided above the arrayed photo-sensors, whereby the distance between a light source and the photo-sensors can be reduced so as to improve sensitivity and resolving power.

Abstract: An optical semiconductor is integrated with a transistor by epitaxially growing a lightly doped epitaxial layer on a substrate. One isolated island area of the epitaxial layer contains a diffusion area on its surface to form the optical semiconductor. A second isolated island area has its conductivity type inverted by a buried layer that is diffused upward into contact with a surface layer that is diffused downward. The upward-diffused and downward-diffused layers unite to form a collector of the transistor. A base area in the surface of the collector contains an emitter in its surface. The emitter and the diffusion area are formed of the same material, and in the same process steps.

Abstract: A photoelectric converting device has non-monocrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.

Abstract: The present invention discloses a light-receiving element, and method for making same, for a charge storage light sensor having a first semiconductor layer of a first conductive type with an element isolation region disposed thereon. The element isolation regions are formed to produce tilted edges embedded within the first semiconductor layer and to also produce an embedded region of a second conductive type. The embedded region is effective to collect the photoelectric current resulting from light exposure to the first semiconductor layer regions upon the application of a reverse bias potential to the embedded region.

Abstract: In a matrix array of photosensitive elements, each photosensitive point is provided with a photosensitive element (pin photodiode) in series with a capacitor between a row lead and a column lead. It is proposed to make use of a simplified photosensitive element in which an end semiconductor layer is suppressed such as, for example, the n-layer of a pin photodiode or the n-layer of a five-layer phototransistor of the nipin type. The dielectric of the capacitor then comes directly into contact with an intrinsic semiconductor layer in which electrons accumulate. These electrons reconstitute the equivalent of an n-type doped layer.

Abstract: A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n.sup.+ collector region an n.sup.- region disposed contiguous to the collector region, a p base region disposed contiguous to the n.sup.- region, an n.sup.+ emitter region disposed contiguous to the base region, and a first electrode connected to the emitter region; and a storage capacitor constituted by the base region, an electrically insulating region disposed contiguous to the base region, and a second electrode connected to the electrically insulating region; Whereby the base region is held in a floating state. A photogenerated charge is stored in the base region by controlling the potential of the base region and an electric signal corresponding to the charge stored in the base region is subsequently output from the first electrode.

Abstract: An infrared detector device for at least two wavelengths, i.e. 3 to 5 microns and 8 to 14 microns, comprises detector elements (10 and 20) formed in two or more infrared-sensitive materials with different badgaps, e.g. in cadmium mercury telluride. These materials may be provided side-by-side in a single level on a substrate (3) or preferably as different levels (1 and 2) on the substrate (3). Each detector element (10 and 20) comprises a p-n junction (11 and 21) between opposite conductivity type regions (12,13 and 22,23). Electrical connections (15,25,24) extend from these regions to the substrate (3). Freedom in design and fabrication is obtained by a connection structure in which one connection (25) of the longer-wavelength response element (20) contacts both the semiconductor material (2) of that element (20) and the larger-bandgap material (1) of the shorter-wavelength response element (10), at a side-wall (42) of both materials.

Abstract: A light receiving semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the substrate, isolation regions of the first conductivity type for separating the second conductivity type semiconductor layer into a plurality of islands, at least one of the second conductivity type islands and the first conductivity type substrate constituting a light receiving element, an anti-reflection film covering at least the entire surface of the island of the light receiving element, and a first conductivity type layer formed between the anti-reflection film and the second conductivity type island and extending to the first conductivity type isolation region surrounding the island of the light receiving element.

Abstract: In an optical printer head or image reading apparatus, light emitting diodes, photo detectors and other picture elements are formed, by a specified number of pieces individually, as picture element arrays, and these arrays are linearly arranged. The distance of the picture elements at the adjacent outermost positions of the arrays, that is, the distance between the arrays, and the position of the heightwise direction of the arrays must be composed to be identical. Accordingly, the positioning marks are formed in the arrays in the same manufacturing process of the picture elements, and the distance between the arrays is adjusted at high precision. The arrays are affixed to the wiring substrate with an adhesive, and at this time by adjusting the layer thickness of the adhesive, the positions in the heightwise direction of the array surface are identically controlled.