Abstract: An amplification-type solid-state image sensor includes a plurality of picture elements each thereof including a phototransistor. The phototransistor includes a plurality of split gate electrodes to which is applied a voltage for inducing carriers of the same conductivity type as a source region and a drain region in a surface of a semiconductor layer forming a channel. During a resetting period a control voltage is applied simultaneously to all of the split gate electrodes and during a photogenerated charge storage period a control voltage is applied alternately to the split gate electrodes. The occurrence of a dark current due to a boundary surface level present at a boundary surface between an insulator layer and the semiconductor layer is restrained.

Abstract: An electro-optic integrated circuit including an addressable array of light emitting devices, a column decoder and a plurality of address lines formed on the substrate. There are address lines each including an external connection pad. The decoder includes a switching circuit connected to each column for activating the column and a plurality of sets of diodes connected to the address lines and the switching circuits so that each set of diodes has a unique code produced by a combination of diodes in that set .and the address lines to which the diodes in that set are connected.

Abstract: A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film.

Abstract: A photo sensor comprises a semiconductor substrate, a bipolar photo transistor having an emitter region, a base region and a collector region which is formed in the surface region of the semiconductor substrate, a silicon dioxide formed on the bipolar phototransistor, and a film having a smaller diffusion coefficient of hydrogen than the silicon dioxide formed all over the silicon dioxide.

Abstract: Compatibility of high sensitivity with low remaining images, and low crosstalk can be achieved by a laminated solid-state image pickup device, which includes accumulating portions for accumulating electric signals, reading units for reading the electric signals, connecting members formed in contact with the accumulating portions, and a photoconductive film, and by a method for manufacturing the device. The photoconductive film is made of a non-crystalline semiconductor, and is configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type. Each of the connecting members is made of a semiconductor layer of a first conduction type, intrinsic or having a low impurity density, surrounded by a semiconductor layer of the second conduction type or a conductive material.

Abstract: A method of fabricating heterojunction bipolar transistors (HBTs) including epitaxial growth of collector, base and emitter layers, allowing for self-aligned emitter-base contacts to minimize series base resistance and to reduce total base-collector capacitance.

Abstract: There is disclosed a photocathode comprising:a photoelectric conversion layer for internally exciting photoelectrons in response to incident photons; a semiconductor layer having a photoelectron emission surface for emitting the photoelectrons generated and accelerated in the photoelectric conversion layer from the photoelectron emission surface; an upper surface electrode formed on the photoelectron emission surface of the semiconductor layer; and a lower surface electrode formed on the semiconductor layer so that the lower surface electrode is opposite to the upper surface electrode through the semiconductor layer, the upper surface electrode being divided so as to provide a plurality of pixel electrodes which are electrically insulated from each other, the plurality of pixel electrodes being respectively connected to a plurarity of bias application wires.

Abstract: A large area photovoltaic device includes a plurality of photovoltaic regions electrically interconnected in parallel. The regions are defined by through hole connections which establish electrical contact between a top transparent electrode and a monolithic metal substrate. A second terminal is provided by a bottom, metallic electrode disposed upon an electrically insulating layer supported on the metallic substrate.

Abstract: A method of fabricating a high density thin film circuit includes the step of bonding a high density connector having a plurality of electrical connection lines with a wafer having a plurality of electrical contact pads arranged in a pattern with a pitch less than about 100 .mu.m so that an electrical coupling is formed between respective ones of the wafer contact pads and corresponding ones of connector electrical connection lines. The step of forming the electrical coupling comprises pyrolysis of an adhesive disposed between the high density connector and said wafer.

Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Abstract: A semiconductor image pickup device comprises a photo-sensing substrate and a signal processing substrate, wherein the photo-sensing substrate further comprises a plurality of detector elements, and the signal processing substrate comprises a plurality of input diodes, each detector element being operatively connected to the respective input diode. The detector elements are isolated and light shielded from each other and further from the signal processing substrate by a light shield layer, and each detector element has an input port for incident rays on an input side of the photo-sensing substrate and has a surface region on the opposite side for outputting a signal to the input diode. The light shield layer of the invention comprises an insulation multilayer and a metal layer laminated in this order from the input side of the incident rays. The embodiments utilize a silicon nitride layer and zinc sulphide layer as the insulation multilayer.

Abstract: The disclosed device and system enables the cell-based amplification of photo-e The disclop41 The detection device is realized by overlaying an amplifying semi-conductor structure, generally referred to as avalanche photo-diodes, on top of a typical prior-art charge coupled device structure. The disclosed arrangement is a hybrid of these two technologies with certain provisions which allow the two prior art technologies to function properly as a single integrated unit.

Abstract: A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.

Abstract: A radiation detector includes a photovoltaic diode mesa structure (16) having of a plurality of sub-mesa structures (16a, 16b). Each of said sub-mesa structures includes a first layer (14a) of semiconductor material having a first type of electrical conductivity and a second layer (14b) having a second type of electrical conductivity such that a p-n junction is formed between the first and the second layers. Metalization (24) is disposed within a trench (30a) that runs between the sub-mesas and includes a tab portion (24a) that extends upwardly over a sidewall of each of said sub-mesa structures so as to electrically contact the second layer contained within each. As a result, each of said sub-mesa structures are electrically connected in parallel.

Abstract: A photoelectric transfer device includes at least one photoelectric transfer cell having the following elements: A photoelectric transfer element generates a photoelectric current based on a quantity of incident light. An amplifier element includes first FET and functions as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof. A read unit outputs, as an output signal, the source voltage of the source follower. The photoelectric transfer element is connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.

Abstract: A vertical semiconductor radiation detector structure is described in which a suction diode, formed by deposition of p+ on a substrate or epitaxial layer and subsequent up-diffusion during epitaxial layer deposition, surrounds the active area of the radiation detector. The suction diode removes the slow diffusion currents thereby reducing the settling time of the radiation detector to an acceptable level.

Abstract: An image sensor comprises photo sensing elements, having charge storage capability, for transducing received light into electrical quantities. First switching elements have charge storage capability for transferring the charge stored in the photo sensing elements. Second switching elements have charge storage capability for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer. The image sensor further comprises a first gate pulse generator for generating a first pulse signal to be applied to the first switching elements, and a second gate pulse generator for generating a second pulse signal to be applied to the second switching elements, the amplitude of the second pulse signal being different from that of the first pulse signal. The potential applied to the source electrodes of the second switching elements is different from ground potential.

Abstract: A light transmissive, electrically conductive oxide comprising tin and a Group II element is doped with a Group III element and with one or more of hydrogen or fluorine. The oxide may be deposited by sputtering at a temperature in the range from 25.degree. to 350.degree. C., or by chemical vapor deposition at temperatures in the range from 80.degree. to 400.degree. C.

Abstract: An x-y-addressed imager assembly includes a common electrode having more than two electrical contact points disposed at selected intervals along each edge of the common electrode that corresponds to a lateral boundary of the imager assembly. The selected intervals are typically about equal in length and not greater than about 12% of the length of the edge of the common electrode. The multiple electrical contacts along the common electrode provide low impedance and low magnetic loop area for signals passing along the common electrode to readout and drive circuits.

Abstract: An electrode array microchip, fabricated preferrably using CMOS technology, comprising electrodes made with overglass cuts over metal2 regions is disclosed. Overglass cuts of dimensions approximately an order of magnitude smaller than dimensions quoted in current design rules for CMOS technology are successfully employed to make exposed electrodes of dimensions on the order of microns. Thus, the electrode array chip can be produced cheaply on commercial fabrication lines. The invention finds many uses in biology and medicine, particularly when applied to the measurement of neural electrical activity.

Abstract: A monolithic photoconductive pulsar utilizing a radial transmission line structure to store energy and a unique optical pulse illumination means to trigger the radial transmission line to radiate extremely, high voltage gain, narrow bipolar pulses. By achieving a higher voltage gain, the bipolar RF pulses are desirable in that they substantially improve the efficiency and lifetime of the device over the prior art.

Abstract: A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.

Abstract: Image sensors using thin films and having a higher production yield, low production cost and higher reading resolution are provided. In a photoelectric conversion device having a thin film semiconductor layer is provided that performs photoelectric conversion with a first electrode structured mainly by a metallic material on a light transmitting insulating substrate or an insulating film and a second electrode on the thin film semiconductor layer. A thin insulating film is formed at least partially between the second electrode and the thin film semiconductor layer or the thin film semiconductor layer and the first electrode.

Abstract: A photoelectric converter comprised of a semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of opposite electroconductive type is irradiated with a light. An amplified power is output from at least one of the two semiconductor regions of same electroconductive type. The semiconductor region of the opposite electroconductive type comprises a semiconductor region that accumulates a charge generated by light input and a semiconductor region acting as a control electrode region for the semiconductor transistor.

Abstract: An image sensor uses an image reading element formed by integrating pixels for converting image information to an electric signal. In each of the pixels, a common electrode common to all the pixels and an individual electrode corresponding to each of the pixels are disposed through at least an organic photoconductive layer. A crosstalk capacitance of each of the pixels is equal to or smaller than 35% of a sum of an electric capacitance between individual electrodes and an output capacitance of the individual electrode. A blocking layer may be disposed between the common and individual electrodes. Each of the pixels may be constructed such that the individual electrode is arranged on a supporting body, and a blocking layer and the photoconductive layer are formed on the individual electrode, and the common electrode is arranged on the blocking and photoconductive layers.

Abstract: The semiconductor image sensor element comprises a transistor gate potential well 102, a virtual potential well 100 adjacent the transistor gate potential well 102, a clear gate barrier 104 adjacent the virtual potential well 100, a clear drain 30 adjacent the clear gate barrier 104, and a charge sensor 28 for sensing charge levels in the transistor gate potential well 102. The charge levels are responsive to light incident on the device. Charge is stored in the virtual potential well 100 during charge integration. After charge integration, the charge is transferred into the transistor gate potential well 102 from the virtual potential well 100 for charge detection by the charge sensor 28. After charge detection, the charge is transferred from the transistor potential well 102 to the clear drain 30.

Abstract: An image sensor comprising a plurality of photo-electric conversion elements formed by layering a metal electrode, a photo-electric conversion layer, and a translucent electrode, the translucent electrode being divided into individual electrodes which are provided for the respective photo-electric conversion elements, and wherein at least the surfaces of the photo-electric conversion layer adjoining the translucent electrodes which appear between the individual electrodes are removed.

Abstract: A charge-coupled device (CCD) is provides having improved charge transfer efficiency. This CCD is a portion of an image sensor and manufactured by first laminating a first oxidation film and a first nitride film one after the other on a semiconductor substrate and then forming a plurality of first gate electrodes on the first nitride film at predetermined intervals apart. A second oxidation film is formed only on an upper surface and along side walls of each of the first gate electrodes. The first nitride film exposed between the first gate electrodes is removed and a second nitride film is formed on the exposed first oxidation film and the second oxidation film. A second gate electrode is then formed on the second nitride film between adjacent first gate electrodes. An image sensor is obtained in which leakage current density between the gate electrodes is reduced and the dielectric characteristic of a gate dielectric film is improved.

Abstract: An image readout device having a plurality of readout elements for converting image into electrical signals, each element having a photoconductive layer and a pair of electrodes which contact the photoconductive layer, and between which the layer is disposed. The photoconductive layer contains a charge generation material and a charge transport material. Oxytitanium phthalocyanine is used as the charge generation material.

Abstract: An IR detector array (10) wherein a metal contact pad (20) makes contact to an underlying radiation detector through one or more thin, electrically conductive stripes (20a). The striped pad contact shape is used in conjunction with a highly absorptive and opaque coating (18) that is interposed between a bottom surface of the contact pad and a top surface of the radiation detector. The highly absorptive coating serves to mask the bottom surface of the metal contact pad from any radiation that would impinge thereon and be reflected. As a result, stray or unabsorbed radiation reaching to a region of the contact pad encounters only the relatively small target presented by the edge of the one or more thin electrically conductive stripes.

Abstract: A bipolar phototransistor comprises both an integrating photosensor and a switching element. The base terminal of the bipolar phototransistor is utilized as the switch-control node for the pixel and its emitter is the output node of the integrating photosensor. A plurality of integrating photosensors may be placed in an array of rows and columns, wherein the bases of all bipolar phototransistors in a row are capacitively coupled together to a common row-select line, and the emitters of all bipolar phototransistors in a column are connected together to a column sense line. The input of a sense amplifier is connected to the sense line of each column of integrating photosensors. An integrating sense amplifier according to the present invention includes an amplifying element having an inverting input connected to the sense line. A capacitor, preferably a varactor, is also connected between the inverting input and output of the amplifying element.

Abstract: The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode.The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.

Abstract: A bulk charge modulated MOSFET for sensing light comprising a semiconductor substrate with a gate region of a first conductivity type formed in the substrate. The gate region forms a potential well for carriers of the first conductivity type. The well is formed at a substantial depth from the surface of the gate region. The carriers are formed responsive to incident light. The gate region collects the carriers generated at depths less than the well. A source region of a second conductivity type is formed in the semiconductor substrate laterally adjacent the gate region. The source region is operable to sense a change in threshold voltage of the MOSFET responsive to the collection of carriers by the gate region. A drain region of the second conductivity type is formed in the layer adjacent the gate region and spaced from the source. The drain region is connected to a voltage source.

Abstract: An integrated circuit wafer is formed as a monolithic focal plane array having signal processing circuitry formed upon a first surface thereof and infrared detector elements formed upon a second surface thereof. A process for forming the same is also disclosed. The wafer has an array of waffle-like hollows formed upon one surface. The floor of each hollow has a dense array of small diameter vias formed thereon. The vias extend through the wafer to the second surface thereof. Conductive conduits are formed through the hollows and vias to connect infrared detectors on the second side of the wafer to their associated signal processing circuitry formed upon the first side of the wafer.

Abstract: An electronic switch comprises a photosensitive semiconductor (1,11,12) and a light source (14,24) which, when actuated, illuminates the semiconductor and causes the latter to become conductive, the photosensitive semiconductor being a sintered mixture comprising, by weight, 58-72% of cadmium, 14.8-21% of selenium, 7-15% of tellurium, 7-12% of sulphur, 0.1-1% of chlorine, and 0.005-0.1% of copper.

Abstract: A photosensing pixel element comprises a bipolar phototransistor used as both an integrating photosensor and a select device. The phototransistor is a vertical structure, having as its collector a first doped region of a first conductivity type disposed in a semiconductor substrate or well structure. The base terminal of the bipolar phototransistor comprises a doped region of a second conductivity type disposed within the first doped region and is utilized as the select node for the pixel. Conventional field oxide regions may be employed to isolate the base regions of adjoining phototransistors. A polysilicon line doped to the first conductivity type is disposed over the surface of the semiconductor substrate and is insulated therefrom except in regions where it is in contact with the doped region of a second conductivity type to form an epitaxial emitter for the phototransistor. The polysilicon line also forms the emitter contact for the phototransistor.

Abstract: A TFT array for a display device includes a plurality of spaced apart gate conductors and a plurality of spaced apart source conductors crossing over the gate conductors. TFT's are arranged in rows and columns. The gates of TFT's in each row are connected to a gate conductor for that row, and the sources of TFT's in each column are connected to a source conductor for that column. The drains of the TFT's are connected to respective pixel electrodes arranged in rows and columns. Each of a plurality of display sections has a storage capacitance connected at one end to an associated pixel electrode. Storage capacitance conductors are arranged parallel to respective gate conductors. Storage capacitors associated with the display sections in each row are connected to a storage capacitance conductor that is connected to the gate conductor of the next adjacent row.

Abstract: A method and structure are provided for internal photoemission detection. At least one groove (30a) is formed in a side of a semiconductor layer (32). A silicide film (58) is formed in each groove (30a) over the semiconductor layer (32). A metal contact region (44) is electrically coupled to the silicide film (58) such that a voltage at the metal contact region (44) indicates an intensity of radiation incident on the structure (28).

Abstract: A photoelectric converting device provided with a control electrode area of a semiconductor of a first conductive type and at least two main electrode areas of a semiconductor of a second conductive type different from the first conductive type, and capable of accumulating photo-generated carriers in the control electrode area. The control electrode area becomes substantially depleted at the resetting operation.

Abstract: A photosensitive semi-conductor device is disclosed having a matrix of non-translucent dots on its photosensitive surface. In an array of photosensitive semi-conductor devices, such as photodiodes, the non-translucent dot pattern applied to this photosensitive surface of each photodiode is used to regulate the output from each photodiode. The dot matrix is preferably sputtered onto the anti-reflection coating of the photosensitive surface of the photodiode.

Abstract: A plurality of thin polycrystalline silicon solar cells formed on a ceramic substrate and which are electrically series connected to form a monolithically interconnected submodule. Adjacent solar cells are electrically separated by a vertical trench and electrically connected by interconnects located below the light receiving surface of each solar cell. The submodules are provided with external electrical contacts for electrically connecting into a photovoltaic module assembly.

Abstract: A bipolar phototransistor comprises both an integrating photosensor and a switching element. The base terminal of the bipolar phototransistor is utilized as the switch-control node for the pixel and its emitter is the output node of the integrating photosensor. A plurality of integrating photosensors may be placed in an array of rows and columns, wherein the bases of all bipolar phototransistors in a row are capacitively coupled together to a common row-select line, and the emitters of all bipolar phototransistors in a column are connected together to a column sense line. The input of a sense amplifier is connected to the sense line of each column of integrating photosensors. An integrating sense amplifier according to the present invention includes an amplifying element having an inverting input connected to the sense line. A capacitor, preferably a varactor, is also connected between the inverting input and output of the amplifying element.

Abstract: In a semiconductor image sensor device comprising arrayed photo-sensors, a connection electrode used for connecting an external circuit or an aperture on the connection electrode is provided at an opposite side surface to an illuminated surface, and a transparent substrate is provided above the arrayed photo-sensors, whereby the distance between a light source and the photo-sensors can be reduced so as to improve sensitivity and resolving power.

Abstract: An image sensing device that outputs a signal logarithmically proportional to the intensity of the incident light. The image sensing device makes use of a sub-threshold current flowing between the drain and source of a MOS transistor when the gate voltage is below the threshold voltage (above which the MOS transistor is nominally conductive and below which nominally non-conductive). Since the logarithmic conversion is done in the photosensing section of a solid-state image sensing device, the output from the device is already compressed and is easily handled by a small capacity CCD. Some output systems for the image sensing device of the present invention are also described.

Abstract: An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.

Abstract: An image pickup apparatus comprises color separation means for separating light from a subject into a plurality of colors, and a plurality of image pickup means provided for each of the plurality of colors, each image pickup means having a plurality of pixels, and each pixel having a gate conductor at a light receiving surface. The thickness of the gate conductor of each image pickup means is different for each image pickup means.

Abstract: The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a substrate to form an array. A planarization layer is deposited over the array of transistors. An energy sensitive layer is deposited onto the planarization layer. Means is provided for electrically connecting the energy sensitive layer with each transistor of the array. A top electrode layer is deposited onto the energy sensitive layer. The solid state detector also comprises circuitry means for providing electronic read-out from each FET of the array.

Abstract: A solid-state image converting device comprises a transparent substrate, a transparent electrode formed on the transparent substrate, an EL layer, formed on the transparent electrode, emitting light by the application of an electric field, a dot-like low resistance layer formed on the EL layer, a photoconductive layer formed on the dot-like low resistance layer, and a back electrode formed on the photoconductive layer. A radiation image entered the transparent substrate or the back electrode is converted into a visible light image having high brightness on the back electrode or the transparent substrate.

Abstract: A new composition of matter is described comprising a stretch oriented electrically-conducting light-polarizing film. An improved light-electric power converting film uses molecular diodes (diads) in this film composition aligned head-to-tail by light and an electric field. The area of the film is utilized more efficiently by reversing the head-to-tail directions of the diads in adjacent areas. This film is laminated to an electrode structure connected to busbars on a substrate sheet. Current flow through the film is unidirectional between pairs of adjacent electrodes, and is summed on busbars connected to an external load. Two such films arranged orthogonally convert about 72% of the incident light power to electric power. A manufacturing device is disclosed. Critical Ranges of parameters are derived and experimental data presented.

Abstract: A radiation detection system includes an array of radiation detectors disposed on a common substrate of type-n silicon, wherein each detector includes an electrode spaced apart from the silicon by silicon dioxide. Two rows of the detectors are coupled by two rows of transfer gates to a common row of diodes for reading out data from any one or ones of the detectors which are individually addressable by row and column conductors. The transfer gate electrodes of contiguous pixels are connected together to form a row conductor. The gates are electrically activatable to provide electrical connection for receiving data of a detector only during a readout interval, and provide electrical insulation of the detectors at all other times. This inhibits blooming. Detector windows may be fabricated of thinned chrome or aluminum layers, or of polysilicon arranged to provide free spaces through which ultraviolet radiation can propagate into the detector.