Abstract: A self-biased solar cell and a module adopting the solar cell. The self-biased solar cell includes a semiconductor substrate of first conductivity type, a semiconductor layer of second conductivity type disposed adjacent to the first surface of the semiconductor substrate, at least one more first electrodes formed adjacent to the semiconductor layer; at least one more dielectric layers formed on the second surface of the semiconductor substrate, at least one or more second electodes formed on the second surface of the semiconductor substrate, the second electodes being disposed adjacent to the dielectric layers, and at least one or more voltage applying electrode formed on the dielectric layers. Therefore, recombination loss of the carriers according to the formation of a back surface field is comparatively decreased, and open voltage and quantum efficiency at a long wavelength are increased.

Abstract: A composite-layer semiconductor device includes a gate above a host substrate, an n++ contact layer above the gate, and source and drain ohmic contacts applied to the n++ contact layer. The source and drain ohmic contacts define a central gate location which is recessed through the n++ contact layer toward the gate. The source and drain ohmic contacts create a barrier to chemical etching so that a current path below the central gate location can be incrementally recessed in repeated steps to precisely tailor the operating mode of the device for depletion or enhancement applications. The composite-layer semiconductor device is fabricated by depositing a gate on an n++ contact layer above a semi-insulating substrate. The semi-insulating substrate and gate are flipped onto an epoxy layer on the host substrate so that the gate is secured to the epoxy layer and the semi-insulating substrate presents an exposed backside. A portion of the exposed backside is removed.

Abstract: An x-ray imaging detector comprised of read-out electronics and PIN diodes formed on a high resistivity silicon-on-insulator substrate that permits cell pitches as small as 20 microns. The read-out electronics are fabricated in the thin, top silicon layer of the SOI substrate. The read-out electronics produced provide circuits such as integrators and transimpedance amplifiers which are required to transform the electrical current from PIN diode detectors into an analog voltage. The anodes of the PIN sensor diodes are formed by etching through an oxide barrier layer in the substrate and implanting a heavily doped p+ region into a high resistivity intrinsic silicon layer. X-ray imaging detectors produced by the methods disclosed herein can be assembled into multi-chip modules that can be used in a large panel x-ray imaging apparatus.

Abstract: An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front side bus at the front side of the insulating layer is connected to the electrode structure. The front side bus extends over an elongate aperture in the insulating layer and is connected through the aperture to a back side bus over substantially the entire length of the front side bus.

Abstract: A jacket material of electrical conductive leads for electrically connecting solar cell modules to each other is comprised of a polyvinyl chloride type resin containing either one of a polyester type plasticizer, a phosphoric acid ester type plasticizer, a fatty acid ester type plasticizer, and an epoxy type plasticizer, whereby the solar cell modules have excellent performance stability with less deterioration of the electrical conductive leads even when the electrical conductive leads are kept in contact with a base member such as an organic waterproof sheet over a long period.

Abstract: A surface shape recognition sensor of this invention includes at least a plurality of capacitance detection elements having sensor electrodes arranged in the same plane on an interlevel dielectric film formed on a semiconductor substrate to be insulated/isolated from each other, capacitance detection means for detecting the capacitances of the capacitance detection elements, and a stationary electrode disposed on the interlevel dielectric film to be insulated/isolated from the sensor electrodes. When an object to be recognized touches the upper surface of the stationary electrode, the capacitances detected by the capacitance detection elements change in accordance with the recesses/projections on the upper surface.

Abstract: An image sensor comprising an array of pixels 2, each pixel 2 including a pin or nip photodiode P. At least the intrinsic semiconductor layer of the photodiodes of a group of pixels is shared between those pixels and acts as a barrier to reduce edge leakage currents. A group of pixels may be a row of pixels, or may be all pixels of the array.

Abstract: A back irradiation type light-receiving device, on which light is incident from the back side with respect to a charge-reading section of a semiconductor thin plate, is provided with a reinforcement member on the charge-reading section side. Electric signals are fed in and out from the charge-reading section by way of a polysilicon lead having a short wiring length and a low-resistance aluminum lead which is formed, after the completion of all the steps requiring a high-temperature treatment, so as to be physically and electrically direct-connected to the polysilicon lead. Accordingly, a charge generated in response to the received light can be read out with a high efficiency, while enabling a high-speed operation.

Abstract: In an optical material formed of strips of laminated methods, through channels or "trenches" are produced in at least one of the lamination materials in a manner that the material will then consist of "stiff islands" interspersed with flexible regions created by the properly created through channels. The trenching alows a strip to become piece-wise alignable, and also makes it flexible enough to bond it in alignment in a laminate, yet continuous enough to be handled as one sheet for initial placement. "Chain-like" capability can be provided by making the sheet into a form resembling a jig-saw puzzle where the chances of the individual pieces slipping apart is reduced using narrow, slanted trenches. Alternatively, "springy" flexibility can be provided by forming relatively long, thin, bent strips of material that support the islands of continuous sheet. The islands are thus allowed to move two dimensionally relative to each other.

Abstract: This solar module in integrated thin-film technology consists of a number of solar cells 11, 12, 13, 14 tandem mounted and series-connected on common substrate 1 and a number of diodes 21, 22, 23, 24 disposed parallel and adjacent thereto. Overlap zones 10, 20 are formed by a projecting edge area of electrode layer 2, 4 of a solar cell or diode engaging a recess in the corresponding electrode layer of the adjacent diode or solar cell. Each diode is connected in the reverse direction with the adjacent solar cell in at least two overlap zones, i.e. front electrode layer 2 of the diode with back electrode layer 4 of the solar cell in at least one of said overlap zones 10, and back electrode layer 4 of the diode with front electrode layer 2 of the solar cell in at least one other overlap zone 20.

Abstract: A large area photovoltaic device includes a plurality of photovoltaic regions electrically interconnected in parallel. The regions are defined by a plurality of conductive channels which establish electrical contact between a top transparent electrode of the device and a monolithic, metal substrate electrode. A second terminal of the device is provided by a bottom, metallic electrode disposed beneath the semiconductor body, and upon an electrically insulating layer which is supported upon the metallic substrate.

Abstract: A solid state microstructure comprises a substrate (10,50,80), a detector element extending outwardly from a surface of the substrate and having first (14,60,88) and second (16,64,90) electrodes on opposing sides thereof, the detector element incorporating an onboard optoelectrically-triggered gating structure. Gating may be achieved by flooding a specified area of the detector element with gating light, preferably from a laser, thereby causing that region to become conductive.

Abstract: A divided photodiode includes a semiconductor substrate; a semiconductor layer formed on a surface of the semiconductor substrate; and a plurality of isolating diffusion regions formed in a plurality of regions in the semiconductor layer so as to respectively extend from a surface of the semiconductor layer opposite to the other surface thereof in contact with a surface of the semiconductor substrate and to reach regions under the surface of the semiconductor substrate, thereby dividing the semiconductor layer into at least three semiconductor regions. A first buried diffusion region is further formed under the other isolating diffusion regions except for a particular one located in an isolating section in a combination of a plurality of the semiconductor regions which are adjacent to each other via the isolating section, and a depletion of the semiconductor substrate in a region under the other isolating diffusion region by the application of a reverse bias thereto is suppressed.

Abstract: A photodetector design is disclosed for preventing an electrode from being broken. A recess portion is formed in a semiconductor substrate. A light absorbing layer is formed in the recess portion, and a buffer layer is formed on the light absorbing layer. A contact layer is formed on the buffer layer. The height of the light absorbing layer can be set to minimize the effect of a step caused by facet formation. An insulating layer is formed outside of a recess portion to project from a main surface of the substrate. The anode electrode is formed on the insulating layer and substantially outside of the recess and, as a result, the electrode is less likely to be broken.

Abstract: A photodiode structure augmented with active area photosensitive regions is used for detecting impinging radiation. The photodiode includes a semiconductor base layer doped with impurities of a first carrier type, a field oxide layer disposed upon the base layer with an opening formed therethrough, a plurality of auxiliary oxide layers wherein each is separately disposed upon the base layer, and a semiconductor diffusion layer doped with impurities of a second carrier type arranged upon the base layer and in contact with the oxide layers. When the photodiode is electrically energized, a plurality of integral photosensitive regions is created within the depletion region to facilitate the detection of impinging radiation at an increased quantum efficiency.

Abstract: Each of a plurality of photodiodes forming a photodetector is mounted on a respective metal pad on the surface of a semiconductor integrated circuit chip including a corresponding number of amplifier circuits for detecting the photocurrent from respective photodiodes. Each circuit comprises a high gain, high input impedance amplifier and a feedback element, typically a resistor of high value, connected across the amplifier between input and output nodes thereof. Each photodiode mounting metal pad and each feedback resistor is connected to a common input node of a respective amplifier by metal paths within a connecting structure forming part of the integrated circuit. Adverse effects on the output current from the photodiodes are reduced by forming a junction of the path from each feedback resistor with the path from the corresponding photodiode at the metal pad on which the photodiode is mounted, and interconnecting such junction along a common path to the corresponding amplifier input node.

Abstract: The present invention discloses a converging type solar cell element able to restrain recombination of carriers and inflow of carriers into an embankment section and improve photoelectric conversion efficiency. A p.sup.+ diffusion layer 16 is formed on the surface of a sunlight receiving section 10 which is formed on a silicon substrate 12 comprising a p-type silicon. An energy gradient arises between the p.sup.+ diffusion layer 16 and the silicon substrate 12. Therefore, free electrons, which are minority carriers among the carriers generated in the silicon substrate 12 resulting from irradiation of sunlight to the sunlight receiving section 10, can be prevented from migrating to the surface side of the silicon substrate 12. Further, recombination of free electrons which may arise due to lattice defects of the surface can also be prevented. Still further, the p.sup.+ diffusion layer 16 may also be formed on a back surface side of the embankment section 14 which surrounds the sunlight receiving section 10.

Abstract: A high gain photodetector requiring a substantially silicon area than prior art photodetectors having the same gain. The photodetector includes a light converter for converting a light signal to a current; and a first vertical transistor. The first vertical transistor includes a first well in a semiconductor substrate, the first well including a diffusion region, the semiconductor substrate and the diffusion having a first type of doping and the first well having a second type of doping. The first type of doping is either P-type or N-type, and the second type of doping is the other of the P-type or N-type doping. The light converter is connected to the first well so as to forward bias the vertical transistor thereby causing a current to flow between the diffusion region in the first well and the substrate. Additional amplification of the photocurrent from the light converter can be provided by including a second vertical transistor.

Abstract: In order to realize a multi-function sensor in which a reduction of a CMOS sensor and an addition of pixel signals are performed in a pixel portion and, further, an addition and a non-addition can be arbitrarily performed, there is provided a solid state image pickup apparatus in which charges generated by a photoelectric converting device are perfectly transferred to a floating diffusion portion through a transfer switch and a change in electric potential of the floating diffusion portion is outputted to the outside by a source-follower amplifier. A few photoelectric converting devices are connected to one floating diffusion portion through the transfer switch. One set of a few source-follower amplifiers are formed for a few pixels. The photoelectric converting device is constructed by an MOS transistor gate and a depletion layer under the gate.

Abstract: A salient integration mode active pixel sensor. The active pixel sensor includes an amplify/compare transistor which has a threshold voltage. The amplify/compare transistor couples an input of the amplify/compare transistor to an output of the amplify/compare transistor when the input of the amplify/compare transistor exceeds the threshold voltage. A photo-diode generates a signal voltage which has a voltage level dependent upon the intensity of light received by the photo-diode. The signal voltage is coupled to the input of the amplify/compare transistor. A reset element couples a reset line to the photo-diode and discharges the photo-diode when the reset line is active. A coupling capacitor for couples a select line to the input of the amplify/compare transistor. The select line causes the input to the amplify/compare transistor to exceed the threshold voltage and thereby couple the signal voltage to the output of the amplify/compare transistor.

Abstract: A photosensing device is provided which has a photojunction structure that includes a junction of a photodiode and a body-junction of a photo-capacitor operating in an inversion mode. The photojunction structure is fabricated with standard complementary MOS (CMOS) technology features and includes an edge that is guarded against known leakage-causing hazards. In one embodiment, the photodiode junction is surrounded by the body-junction of a poly-gate MOS capacitor to form the photojunction. The photojunction can be placed deeply under a surface of the photosensing device by utilizing a deep diode diffusion to exhibit a better response at the red end of the spectrum. In another embodiment, both shallow and deep junction diodes are combined so that the photojunction has a composite depth which can be used to weight the spectral response to favor one or the other end of the light spectrum.

Abstract: A photoelectric conversion element includes a photoelectric conversion portion for generating and storing a charge according to incident light, an amplifying portion having a control region for generating a signal output according to the charge received in the control region from the photoelectric conversion portion, a transfer control portion for transferring the charge generated and stored in the photoelectric conversion portion to the control region of the amplifying portion, a reset-purpose charge draining region for draining the charge transferred to the control region of the amplifying portion, and a reset-purpose control region for controlling the reset-purpose charge draining region. A reset operation can be performed without operating the amplifying portion. Also, a photoelectric conversion apparatus having high sensitivity and low dissipation power can be obtained.

Abstract: A solid-state imaging device has a plurality of photodetector elements arranged on a substrate for photoelectrically converting incident light into signal charges, storing the signal charges, and producing an output signal voltage depending on the amount of the stored signal charges. Element-separating electrodes electrically separate adjacent ones of the photodetector elements from each other. Each of the photodetector elements has a control electrode and a gate insulating film below the control electrode. The gate insulating film has a film thickness varying in the width direction of a channel of the gate insulating film.

Abstract: A liquid crystal display device that includes a storage capacitor having a capacitor electrode for storing voltage applied to a pixel electrode for a constant period of time, is disclosed. The device includes: a plurality of data lines arranged in parallel over an insulation glass substrate; a plurality of gate lines arranged in parallel over the insulation glass, gate lines being crossed with the data lines to define a plurality of pixel regions; a plurality of the pixel electrodes formed at the pixel regions, respectively; a plurality of TFTs formed at the cross points of the data lines and the gate lines, and each TFT is connected to each data line and each pixel electrode, respectively; and a plurality of opaque layers formed on the insulation glass substrate 40, each light shielding layer consisting of a body and a plurality of protrusions, and the body being elongated along each data line and overlapped with the portions of pixel electrodes and each protrusion protruded from the body to each TFT.

Abstract: A light receiving element is comprised of a light sensitive surface on a semiconductor substrate and a positive electrode (anode), a negative electrode (cathode), a mounting precision test mask, a conductive electrode wire, and solder resist on the same substrate surface. A metal thin film, a mounting alignment mark, and a mounting precision mark window are provided on the back side of the substrate. Two or more electrode surfaces having either the anode or the cathode used as the common electrode are provided. The light sensitive surface is positioned approximately in the center between these two electrode surfaces. A highly precise mounting can therefore be achieved with the solder bump, even when mounting single light receiving elements. High precision mounting is also obtained when mounting light receiving element arrays. This type of light receiving element can be precisely positioned and bonded by solder bumps to a substrate having an optical fiber fitted in the V groove.

Abstract: An optoelectronic semiconductor diode is made from a layer of many small individual semiconductor particles containing doping junctions positioned between two contact surfaces mechanically supported by substrates. In the preferred embodiment, the particles are formed of a semiconductor, such as indium gallium nitride, as the active region. The particles are of a size on the order of 10 to 100 microns and are formed by reacting metallic gallium and indium with ammonia, or by a similar method. Electrical contacts are made to the particles by conductive films that have been deposited on the inner surfaces of the substrates. These contacts can be either reflective or transparent, depending upon the materials used. The particles each contain a p-n or similar junction, created either by diffusing in dopants or by selectively activating dopants that are already present. When a forward bias is applied to an LED, minority carriers spill over the junction and recombine with majority carriers to produce light.

Abstract: A semiconductor substrate having a silicon-on-insulator structure may achieve superior performance by utilizing a low oxygen content monocrystalline silicon thin film layer for device formation. A supporting substrate, which may comprise a transparent material, such as quartz, or which may be silicon, has an insulating film disposed thereover. The insulating film preferably has a lower diffusion coefficient with respect to impurities than the monocrystalline silicon thin film, which is provided thereover. In accordance with this structure, oxygen particles are not introduced into the monocrystalline thin film and the thin film has a low oxygen concentration to maximize the minority carrier lifetime, enhance device performance characteristics, and prevent the occurrence of latch up.

Abstract: A transferred-electron photocathode or other opto-electronic device having one light-receiving side and one electronic side, in which multiple photocathodes are processed concurrently on a wafer for front and back side contacts and anti-reflection layers. After the wafer-level processing, the individual cells are diced, and each is placed in a rectangular recess formed in a window body with the light-receptive part of the photocathode facing the window. The integration is aided by several novel processes including coining a chip recess into a window, selective etching of titanium over chromium, and using a single metal sheet member for electrically contacting the photocathode, forming part of the vacuum envelope, and providing an exterior electrical tab.

Abstract: An image capture panel particularly useful in radiographic application is disclosed, in which the active image capture area of individual sensors having top and bottom charge collecting microplates arrayed in rows and columns is extended by providing an additional charge capture conductive strip over sensor areas which are not normally covered by a charge collecting microplate. The strip may be made integral with the top microplate or may be separate and electrically connected thereto at a single point.

Abstract: A Group II-VI IR photodiode 10 has a passivation layer 16 overlying at least exposed surfaces of the p-n diode junction 15, the passivation layer being a compositionally graded layer comprised of Group II atoms diffused into a surface of the p-n diode junction. The passivation layer has a wider energy bandgap than the underlying diode material thereby repelling both holes and electrons away from the surface of the diode and resulting in improved diode operating characteristics. A cation substitution method of the invention includes the steps of preparing a surface to be passivated, such as by depleting an upper surface region of Group II atoms; depositing a layer comprised of a Group II material over the depleted surface region; and annealing the deposited layer and underlying Group II-VI material such that atoms of the deposited Group II layer diffuse into the underlying depleted surface region and fill cation vacancy sites within the depleted surface region.

Abstract: For reduced electrical resistance of series connections between columns of photoelectric conversion elements in a flexible photoelectric conversion module, the columns are connected by a flexible connecting member which connects terminal electrodes at the ends of the columns. Manufacture of the module is especially convenient when the flexible connecting member is a conductive tape as also used for the terminals.

Abstract: An amplifying type solid-state imaging device having a transistor formed on a semiconductor base and a charge release portion which stores a signal charge which is generated by light incident on the transistor and outputs a change of an electrical signal in accordance with the stored charge. The transistor includes: a first gate region including a portion for storing the signal charge therein and a first gate electrode formed on the semiconductor base surface; and a source and a drain formed of impurity layers of a higher concentration than the semiconductor base concentration. The charge release portion includes: a second gate region including a portion in the vicinity of the semiconductor base surface, and a second gate electrode formed via an insulating film on the semiconductor base surface; and a drain for charge discharge formed of an impurity layer of a higher concentration than the semiconductor base concentration.

Abstract: A method of forming a contact for a photosensitive element of a photosensitive imager including a common electrode separated from a bottom contact by intervening layers of an SiOx transistor passivation layer over the bottom contact and an SiNx diode passivation layer over the transistor passivation layer. Controlled etching through the passivation layers exposes but does not damage the thin film transistor passivation layer extending in regions beyond the common electrode, and also improves adherence of a protective gasket in such regions. The contact pad formed in this process has a layer of diode passivation material and a layer of transistor passivation material disposed between the upper common electrode material layer and the underlying source and drain electrode material layer, with a via provided having smooth and sloped sidewalls over which the common electrode material extends to provide electrical contact between the common electrode material layer and the source and drain electrode material layer.

Abstract: A sense amplifier comprises an input node and an output node. An input transistor has a gate connected to the input node, a source connected to a first supply voltage rail, and a drain. A cascode transistor has a gate connected to a cascode node, a source connected to the drain of the input transistor, and a drain connected to the output node. A load transistor has a gate connected to a bias node, a drain connected to the output node, and a source connected to a second supply voltage rail. The gates of the cascode transistor and the load transistor are biased such that the input transistor and the cascode transistor are operated near their threshold and the load transistor is operated above threshold. In a presently preferred embodiment of the present invention, the input transistor and the cascode transistor of the sense amplifier are wide and short, such that they operate in below threshold, whereas the load transistor is made long and relatively narrow, so that it operates above threshold.

Abstract: The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

Abstract: In order to restrain shifts of the flat-band voltage by driving a photoelectric conversion element and to assure a broad dynamic range, high S/N ratio, and stable characteristics, a photoelectric conversion device, which has, on an insulating substrate, a first electrode layer, a first insulating layer for blocking passage of both a carrier of a first type and a carrier of a second type having a different polarity from that of the carrier of the first type, a photoelectric conversion semiconductor layer, an injection blocking layer for blocking injection of the carrier of the first type into the semiconductor layer, and a second electrode layer, has a switch means for repetitively performing, in a predetermined order, following three operation modes for applying an electric field to the individual layers of the photoelectric conversion element: (1) a photoelectric conversion mode for producing and accumulating a charge in correspondence with an incident light amount; (2) a refresh mode for refreshing the char

Abstract: A capacitor coupled contactless imager structure and method of manufacturing the structure results in a phototransistor that includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the collector region. An n-doped polysilicon emitter contact is formed in contact with the surface of the P-type base region such that an n+ epitaxial region is formed in the base region as the emitter of the imager phototransistor. Silicon dioxide separates the polysilicon emitter contact and exposed surfaces of the base region from a layer of poly2 about 500-600 .ANG. thick that is formed to cover the entire base region.

Abstract: A large area avalanche photodiode device that has a plurality of contacts formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a cavity is formed in one layer of the avalanche photodiode that extends to a depletion region that exists in the layer as a result of a voltage applied to the device. The plurality of contacts are formed in the cavity so that each of the contacts are positioned substantially adjacent the depletion region. In another embodiment, a plurality of contacts are formed in a cavity and an isolation structure comprised of a grid of semiconductor material is formed so as to be interposed between adjacent contacts. The isolation structure preferably forms a p-n junction with the surrounding semiconductor material and the p-n junction provides isolation between adjacent contacts.

Abstract: A solid-state imaging device can improve a detection sensitivity of a signal means by decreasing a parasitic capacity of a horizontal signal line. In a solid-state imaging device in which a plurality of pixels are arranged in a matrix fashion, a pixel is flowed through a horizontal switch (39) to a horizontal signal line (40) as a signal charge, and a signal is outputted by a signal detecting means connected to the end off the horizontal signal line (40), an insulating gate-type field-effect transistor comprising the horizontal switch (39) includes channels extended at least in two directions between its source electrode connected to the horizontal signal line (40) and drain electrode.

Abstract: Each signal line connected to one light receiving element array is placed between switching transistors of the switching transistor array corresponding to another light receiving element array over the entire light receiving element arrays, so that the wiring capacity values occurring in the signal lines can be made uniform. High-quality image signals excellent in half tone reproducibility with few variations in dark output and a wide dynamic range of sensor output can be provided.

Abstract: A smart array comprised an array of polymer grid triodes arrayed with a common polymer grid. In a preferred embodiment it is embodied as a conducting polymer device which provides local gain adjustment for video display such that the entire sensor dynamic range available, typically more than 16 bits in the infrared detector case, can be utilized locally to solve the intra-scene contrast problem. The array of polymer grid triodes with common grid can be utilized to process the image in analog form directly on the focal plane. Alternatively, the array of polymer grid triodes with common grid can be utilized to process the image after analog to digital conversion and integrated directly into the display.

Abstract: An x-ray imaging detector comprised of read-out electronics and PIN diodes formed on a high resistivity silicon-on-insulator substrate that permits cell pitches as small as 20 microns. The read-out electronics are fabricated in the thin, top silicon layer of the SOI substrate. The read-out electronics produced provide circuits such as integrators and transimpedance amplifiers which are required to transform the electrical current from PIN diode detectors into an analog voltage. The anodes of the PIN sensor diodes are formed by etching through an oxide barrier layer in the substrate and implanting a heavily doped p+ region into a high resistivity intrinsic silicon layer. X-ray imaging detectors produced by the methods disclosed herein can be assembled into multi-chip modules that can be used in a large panel x-ray imaging apparatus.

Abstract: By designing pixels with highly transparent ITO electrodes and asymmetric gates such that as much light as possible falls upon a region covered by an ITO electrode, light sensitivity is increased. Impurity diffusion from the ITO electrode into the silicon below is prevented by employing an Oxide/Nitride/Oxide stack as a dielectric. Employing at least some polysilicon electrodes with ITO electrodes is desirable to allow entrance passages through which hydrogen passivation can be accomplished. The pixel architecture can be designed to increase sensitivity further by other design choices. The first of these choices is to incorporate a lenslet on each pixel such that as much as possible of the light falling on the pixel is made to pass through the portion of the pixel covered with ITO.

Abstract: A semiconductor device having a spiral electrode pattern and fabrication method thereof. The device includes an undoped semiconductor substrate, a first and a second probing pads formed on the substrate, and a pair of electrode fingers extending spirally toward a concentric center from the respective first and second probing pads and interdigitated with each other. The method includes the steps of, patterning an insulation layer on a semiconductor substrate in a spiral structure, depositing a metal layer on the substrate including the insulation layer but excluding the sides of the insulation layer, and etching the insulation layer using a wet etching technique.

Abstract: An improved metal-semiconductor-metal (MSM) photodiode, specifically a new high responsivity AND high bandwidth photodetector, resulting in a high gain-bandwidth product is disclosed. The disclosed device is an MSM photodiode in which the anode and cathode are made of different materials of differing opacity and possibly including different electrode dimensions as well. Using an opaque anode and a transparent cathode reduces surface reflections off the opaque electrodes allowing more light to be absorbed within the active semiconductor region. However, it concurrently keeps the transit distance for the slower moving holes to a minimum. Thus, the long tail in the impulse response due to hole collection is minimized, resulting in increased bandwidth.

Abstract: A photodetector that incorporates at least two photosensitive regions (separated by at least one physical gap) of a first semiconductor type with the at least two photosensitive regions being supported on a substrate and acting as first terminals of the photodetector is improved by; adding a second semiconductor type into the physical gap(s) abutting the at least two photosensitive regions. The second semiconductor region(s) form a barrier to the out diffusion between the at least two photosensitive regions of the first semiconductor type. Additionally, the second semiconductor type region acts as a second photodetector terminal. This improved geometry results in faster rise and fall times of the photodetector's output current by decreasing the 3-D spaces within the gap(s) between the at least two photosensitive regions which were not subjected to the presence of an E-field when unimproved photodetectors were biased into operation.

Abstract: A solid-state image device and a method of manufacturing are disclosed. The solid-state image device has: a plurality of pixels, each pixel having a transistor for converting an incident light into an electrical signal, the transistor having a semiconductor substrate, source-drain regions formed on a surface portion of the semiconductor substrate, the source-drain regions being spaced apart from each other to define a channel region between them, and a gate electrode formed above the channel region; a selection line electrically connected to the gate electrode for selecting a pixel from the plurality of pixels; an interlayer insulating film formed to cover the gate electrode and the source and drain regions; a signal line connected to one of the source-drain regions through a contact hole formed in the interlayer insulating film; and a light-shielding film formed below the interlayer insulating film to cover the source-drain region connected to the signal line.

Abstract: A sensor array has cells, each with a sensing element and a switching element. The sensing element includes a charge collection electrode. An anticoupling layer between the charge collection electrodes and the data lines is structured to reduce capacitive coupling between the electrodes and the data lines below a threshold level at which crosstalk is unacceptable. If charge collection electrodes overlap data lines, the anticoupling layer can reduce capacitive coupling so that crosstalk is no greater than 2%. The anticoupling layer can be a dielectric layer with dielectric constant less than 6 and with thickness greater than 1.5 .mu.m, with the dielectric constant being sufficiently low and the thickness sufficiently great that the anticoupling layer reduces capacitive coupling below the threshold level.

Abstract: The dynamic range is increased and the noise level is reduced in a bipolar-based active pixel sensor cell with a capacitively coupled base region by forming the capacitor over a portion of the base region and the field oxide region of the cell. In addition, the noise levels are also reduced by heavily-doping the material which forms a portion of the bottom plate of the capacitor with the same conductivity type as the base region of the cell, and by placing the material which forms the portion of the bottom plate in direct contact with the base region.

Abstract: A color linear charge coupled device for an image pickup apparatus includes red, green, and blue photo diode arrays. First, second, third and fourth transfer gates formed in the device move signal charges generated at the photo diode arrays toward first, second and third horizontal charge coupled device (HCCD) shift registers. By controlling the transfer gates, the red and green signal charges are first transferred to their HCCD shift registers. The blue signal charge is then transferred to its HCCD shift register. Only three HCCD shift registers are required, thus, the device dimension and configuration is considerably simplified compared to prior art configurations. Also, the color resolution of the device is greatly improved because the distance between the respective photo diode arrays is substantially decreased.