Abstract: In a solid state image sensor, transfer electrodes are formed by selectively etch-removing a single layer of conducting electrode material at a plurality of first regions which divide the single layer of conducting electrode material in a row direction for each one pixel. A patterned mask is formed to cover the first regions and the single layer of conducting electrode material but to expose the single layer of conducting electrode material at a second region above each of the photoelectric conversion sections, and the single layer of conducting electrode material is selectively etch-removed using the patterned mask as a mask. Thereafter, a first conductivity type impurity and a second conductivity type impurity are ion-implanted using the patterned mask and the single layer of conducting electrode material as a mask, to form the photoelectric conversion section at the second region.

Abstract: The optical semiconductor device comprises a first contact layer 28 formed on a substrate 16; a first quantum well layer 34 formed on the first contact layer; a second contact layer 36 formed on the first quantum well layer; an optical coupling layer 44 formed on the second contact layer; and a first conductor plug 50 extended from an upper surface of the optical coupling layer and arriving at the first contact layer.

Abstract: A space solar cell includes a back surface electrode formed on a back surface opposite to a light receiving surface of a semiconductor substrate, and a dielectric layer formed between the back surface electrode and the semiconductor substrate. In the space solar cell, a plurality of openings are formed in the dielectric layer for establishing an electrical connection between the back surface electrode and the semiconductor substrate, and a ratio of an area occupied by the openings relative to an area of the back surface is within a range from 0.25% to 30%.

Abstract: A semiconductor image sensor includes a bonding pad formed on a semiconductor substrate. An oxide layer is disposed over the semiconductor substrate to cover the bonding pad. A SOG is disposed on the oxide layer, a silicon-oxy-nitride layer is disposed on the SOG and a color filter is disposed thereon. By using the high transmittance of the SOG and the silicon-oxy-nitride layer, the blue light transmittance by the semiconductor image sensor is therefore enhanced.

Abstract: Position sensors having an active area are assembled into an array in which the electrodes of adjacent sensors are offset and interleaved so that the electrodes are adjacent an active area, thereby avoiding dead spots. The position sensor array is position adjacent to the path of an object opposite to a source of light. As the object passes it alters the distribution of light on the position sensor array that generates signals indicative of the objects position in response to the changes in impinging light.

Abstract: A self-aligned metal electrode sensor structure. The self-aligned metal electrode sensor structure includes a substrate which includes electronic circuitry. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes conductive interconnect vias which pass through the interconnect structure. A sensor is formed adjacent to the interconnect structure. The sensor includes a pixel metallization section and a doped layer electrode. The pixel metallization section is electrically connected to the interconnect via. The pixel metallization section includes an outer surface which is substantially planar. The doped layer electrode includes an inner surface adjacent to the outer surface of the pixel metallization section. The entire inner surface of the doped layer electrode is substantially planar. A transparent conductive layer is formed adjacent to the sensor. The interconnect via and the transparent conductive layer electrically connect the electronic circuitry to the sensor.

Abstract: A horizontal, insulated gate field effect transistor of the present invention includes a semiconductor substrate of first conductivity. A well region of second conductivity is formed on the surface of the semiconductor substrate. A source region of first conductivity is formed in the well region. A source electrode is connected to the source region. A drain region of first conductivity is formed in the well region. A gate dielectric is formed on the well region and extends over the source region and drain region. A gate electrode is formed on the gate dielectric. The drain electrode is connected to the well region at a position other than the drain region.

Abstract: A multiple-photosensor structure. The multiple-photosensor structure includes a substrate. A first photosensor is formed adjacent to the substrate. A first pixel electrode of the first photosensor is electrically connected to the substrate. A first transparent conductive layer is formed adjacent to the first photosensor. The first transparent conductive layer electrically connects a first outer electrode of the first photosensor to the substrate. A second photosensor is adjacent to the first transparent conductive layer. A second pixel electrode of the second photosensor is electrically connected to the substrate through the first transparent conductive layer. A second transparent conductive layer is adjacent to the second photosensor. The second transparent conductive layer electrically connects a second outer electrode of the second photosensor to the substrate. The multiple-photosensor structure can further include a third photosensor formed adjacent to the second transparent conductive layer.

Abstract: A solid-state wavelength demultiplexer comprising a plurality of photosensitive elements wherein each element has certain energy gap defined by the material composition. All photosensitive elements are grown on a common substrate where the first grown buffer layer, adjacent and near lattice matched to the first bottom photosensitive element, is heavily doped. A composition of photosensitive elements varies from the first bottom photosensitive element up to a first top photosensitive layer in such a way that corresponding energy gap has a minimum value in the lowermost element while the maximum value in the uppermost element. A wide gap doped “window” layer is grown on top of the uppermost element. Each individual photosensitive element consists of at least three sublayers comprising a first doped sublayer, a second heavily doped sublayer, and a photosensitive undoped sublayer sandwiched between them.

Abstract: A method of making a diode and the diode wherein there is provided a substrate of p-type group II-VI semiconductor material and an electrically conductive material capable of forming an ohmic contact with the substrate is forced into the lattice of the substrate to create an n-type region in the substrate in contact with the material and forming an electrical contact to the p-type region of said substrate. The substrate is preferably HgCdTe and the electrically conductive material is preferably tungsten or tin coated tungsten or tungsten coated with a mercury amalgam.

Abstract: Two-terminal circuit has top and bottom cells bonded to an insulating substrate with the top cells bonded on top of the bottom cells. Bottom cells are connected in series through ribbon bonds. Top cells are connected in parallel through ribbon bonds. The ribbon bonds connect to the topsides of the top and bottom cells. The substrate contains metal die bonding pads for the base contacts to the bottom cells. Metal traces are provided for ribbon bond connections to emitter contacts for the bottom cells. A metal trace becomes a positive terminal pad for the bottom cells and a negative terminal for a second pad for the bottom cells. Two cell assemblies may be series connected by connecting positive top cell output connectors with negative pads of top cells in adjacent cell assemblies, and by connecting positive bottom cell output connectors with negative pads of bottom cells in adjacent assemblies.

Abstract: An imaging device formed as a CMOS semiconductor integrated circuit includes a doped polysilicon contact line between the floating diffusion region and the gate of a source follower output transistor. The doped polysilicon contact line in the CMOS imager decreases leakage from the diffusion region into the substrate which may occur with other techniques for interconnecting the diffusion region with the source follower transistor gate. Additionally, the CMOS imager having a doped polysilicon contact between the floating diffusion region and the source follower transistor gate allows the source follower transistor to be placed closer to the floating diffusion region, thereby allowing a greater photo detection region in the same sized imager circuit.

Abstract: A photovoltaic cell comprising a supporting substrate, a front contact layer on the substrate, a layer or layers of semiconductor material and a back contact layer comprising a metal, the back contact having areas without metal thereby permitting the passage of light through the cell.

Abstract: A photo-EMF detector for the collection of photons includes a substrate formed of a photorefractive semiconductor and a plurality of interlaced electrode pairs disposed over the substrate. Each electrode pair includes two parallel electrodes defining an active area therebetween for the collection of photons. One electrode of each pair is disposed between an adjacent pair of electrodes and proximate one electrode of the adjacent pair, light from striking a substrate surface between proximate electrodes and outputs from each of the plurality of interlaced electrode pairs are collected.

Abstract: Improved thin film transistors resistant to photo-induced current and having improved electrical contact between electrodes and the source or drain regions are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional insulating layer formed between crossing orthogonal source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors.

Abstract: A moldless semiconductor device comprising a semiconductor chip held between outer-connecting terminals and connected electrically to the terminals is provided. At least one of the two terminals has, at its region contiguous to the semiconductor chip or at its region contiguous to the semiconductor chip and a region vicinal thereto, a hardness different from all other regions of the one terminal. This moldless semiconductor device can withstand significant external force and exhibits high reliability when used in photovoltaic device modules.

Abstract: Photoelectric conversion chips having the same structure are disposed in line and electrically connected together to constitute a multi-chip type image sensor. The gate of a load transistor of a source follower circuit of each of the photoelectric conversion chips is connected in common to one constant current source circuit. The constant current source circuit and photoelectric conversion chips are mounted on a substrate. With this structure, the common current source circuit is used for all the source follower circuits so that noises will not be generated on the photoelectric conversion chip unit basis. The multi-chip type image sensor can therefore improve the image quality, and horizontal or vertical stripes to be caused by noises otherwise generated in separate constant current source circuits can be removed.

Abstract: It is to provide an essentially transparent solar cell of high efficiency that can be used by accumulating with a display device to generate electricity simultaneously with utilization of the display function, a self-power-supply display device comprising the same, and a process for producing the solar cell. The solar cell comprises at least a transparent conductive substrate having thereon a photoconductor layer that is transparent to a visible ray and has an absorbance of 0.8 or less at a wavelength of from 400 to 800 nm, and a transparent conductive electrode in this order. An embodiment, in which the photoconductor layer contains at least one element selected from Group IIIA elements and at least one element selected from Group VA elements in the Periodic Table, and an embodiment, in which the photoconductor layer contains a metallic oxide semiconductor, are preferred.

Abstract: The present invention provides a thin film photoelectric conversion module, including a substrate and a plurality of thin film photoelectric conversion cells formed on the substrate and connected to each other in series to form a series-connected array.

Abstract: A stacked organic photosensitive optoelectronic device optimized to enhance desired characteristics such as external quantum efficiency and voltage is described. The photosensitive optoelectronic device has a plurality of photosensitive optoelectronic subcells electrically configured in series. The substrate may be the bottom electrode or there may be a bottom electrode distinct from the substrate. Each subcell comprises one or more organic photoconductive layers between electrode layers or charge transfer layers. In one embodiment the top electrode is transparent. In other embodiments two or more electrodes are transparent. In other embodiments photosensitive optoelectronic devices with multilayer photoconductive structures and photosensitive optoelectronic devices with a reflective layer or a reflective substrate are disclosed.

Abstract: A thin-film solar module consists of a number of solar cells tandem mounted and series-connected on a common substrate and a number of diodes disposed antiparallel and adjacent thereto. Overlap zones are formed by a projecting edge area of an electrode layer of a solar cell or diode engaging a recess of the corresponding electrode layer of the adjacent diode or solar cell. Each diode is connected in the reverse direction with the adjacent solar cell in at least two overlap zones, the front electrode layer of the diode with the back electrode layer of the solar cell in at least one of said overlap zones, and the back electrode layer of the diode with the front electrode layer of the solar cell in at least one other overlap zone. The photovoltaically active layer sequence is additionally separated by grooves in areas of the grooves of the back electrode layer.

Abstract: Quantum-well sensors having an array of spatially separated quantum-well columns formed on a substrate. A grating can be formed increase the coupling efficiency.

Abstract: An array of independently connected photovoltaic cells on a semi-insulating substrate contains reflective coatings between the cells to enhance efficiency. A uniform, flat top laser beam profile is illuminated upon the array to produce electrical current having high voltage. An essentially wireless system includes a laser energy source being fed through optic fiber and cast upon the photovoltaic cell array to prevent stray electrical signals prior to use of the current from the array. Direct bandgap, single crystal semiconductor materials, such as GaAs, are commonly used in the array. Useful applications of the system include locations where high voltages are provided to confined spaces such as in explosive detonation, accelerators, photo cathodes and medical appliances.

Abstract: The photosensitive semiconductor element according to the invention comprises a substrate 1, an intermediate layer 2 and an outer layer 5, wherein the intermediate layer 2 is at least partially embedded within the substrate 1 and the outer layer 5 is at least partially embedded within the intermediate layer 2 and the intermediate layer 2 and the outer layer 5 form a photosensitive region 22 for the generation of a light-dependent signal R such as for example a photocurrent. In this arrangement the outer layer 5 is divided into mutually spaced regions 11 which are separated by intermediate regions 13 of the intermediate layer 2. The spaced regions 11 of the outer layer then serve for example as the anode 30 of the photosensitive semiconductor element which can be connected to a suitable electronic evaluation arrangement.

Abstract: There is provided a photoelectric converter comprising a photoelectric conversion element of a laminated structure comprising a first electrode layer, an insulation layer for blocking the passage of a first carrier and a second carrier, a photoelectric conversion semiconductor layer, an injection blocking layer for blocking the injection of the first carrier to the photoelectric conversion semiconductor layer, and a second electrode layer, wherein a switching means is provided for operating the converter by switching the following three operation modes a) through c) for applying an electric field to each layer of the photoelectric conversion element; a) an idling mode for emitting the second carrier from the photoelectric conversion element, b) a refreshment mode for refreshing the first carrier accumulated in the photoelectric conversion element, and c) a photoelectric conversion mode for generating pairs of the first carrier and the second carrier in accordance with an amount of incident light to accumulate

Abstract: A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adja

Abstract: A photoelectric conversion apparatus is provided which includes a substrate at least a surface of which has an insulating property, a plurality of unit photoelectric conversion elements each comprising at least a lower electrode, a photoelectric conversion layer, and an upper electrode that are formed in this order on the front surface of the substrate, and a plurality of rear electrodes formed on the rear surface of the substrate. In this apparatus, the lower electrode and upper electrode of each unit photoelectric conversion element are connected to a corresponding one of the rear electrodes through an aperture formed through the substrate, such that the unit photoelectric conversion elements are connected in series. Each of the rear electrodes comprises a first connecting electrode and a second connecting electrode.

Abstract: A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the trench photosensor.

Abstract: A new method of forming a photogate structure called a “Charge Snare Device” (CSD) uses only a single layer of polysilicon where prior art methods used two or more layers for constructing the gate nodes. Typical CCD structures utilize three layers of polysilicon and CID structures utilize two layers of polysilicon and neither of the prior art structures are suitable for standard sub micron processes. The new CSD device allows biasing of the photogate to the full potential that the process will allow for greater full well for a given pixel size and therefore an improved signal to noise ratio. Charge transfer between the collection site and the sense site isn't controlled as in all previous devices, rather the collection site is completely enclosed by the sense site, effectively snaring all collected photon generated charge as it diffuses and drifts to the sense site. The new photogate structure is suitable for passive pixels, Active Pixel Sensors (APS) or Active Column Sensors (ACS).

Abstract: A space solar cell includes a back surface electrode formed on a back surface opposite to a light receiving surface of a semiconductor substrate, and a dielectric layer formed between the back surface electrode and the semiconductor substrate. In the space solar cell, a plurality of openings are formed in the dielectric layer for establishing an electrical connection between the back surface electrode and the semiconductor substrate, and a ratio of an area occupied by the openings relative to an area of the back surface is within a range from 0.25% to 30%.

Abstract: An array of active pixel sensors. The array of active pixel sensors includes a substrate that includes electronic circuitry. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes a plurality of conductive vias. A plurality of conductive guard rings are formed adjacent to the interconnect structure. Each conductive guard ring is electrically connected to the substrate through at least one of the conductive vias. A plurality of photo diode sensors are formed adjacent to the interconnect structure. Each photo diode sensor is surrounded by at least one of the conductive guard rings. Each photo diode sensor includes a pixel electrode. The pixel electrode is electrically connected to the substrate through a corresponding conductive via. An I-layer is formed adjacent to the pixel electrode. The array of active pixel sensors further includes a transparent conductive layer formed adjacent to the photo diode sensors.

Abstract: A photoelectric conversion device comprises a semiconductor substrate, a same-dopant-type semiconductor layer, a photodiode having a charge-accumulation region, a JFET (which has a gate region, a source region, a channel region, and a drain region, the drain region electrically connected to the substrate 100), a transfer gate for transferring a charge from the photodiode to the gate region, and a reset drain having a charge-drain region for draining excess charges generated by the photodiode, the reset drain also controlling the electric potential of the gate region. Two overflow-control regions are included, one at the boundary between the charge-accumulation region and the charge-drain region within the device, one at the boundary between the charge-accumulation region and the charge-drain region of an adjacent device.

Abstract: A distributed photodiode structure is shown having a plurality of diffusions formed in a uniform pattern on a first surface of a semiconductor substrate and interconnected by a plurality of connective traces. The diffusions are minimum geometry dots for a standard semiconductor fabrication process that are spaced apart from one another by an interval that is less than an average distance travelled by photo-generated carriers in the substrate before recombination. A conductive backplane is formed on a second surface of the semiconductor substrate to produce an inverted induced signal for noise cancelling.

Abstract: An improved low voltage, small surface area, high signal-to-noise ratio photo gate includes a layer of photoreceptive semiconductor material having an impurity concentration selected to enhance the formation of hole electron pairs in response to photons impinging on a surface of the substrate, an electrode extending from the surface of the substrate into the substrate a substantial distance; an insulating layer disposed between the electrode and the substrate for electrically insulating the electrode from the substrate; so that upon the application of an electrical potential to the electrode, a potential well is formed in the substrate surrounding the electrode for accumulating charge generated when photons impinge on the surface of the substrate surrounding the electrode.

Abstract: A light emitting diode array includes a plurality of light emitting elements, provided on a substrate having a first conductivity type, for causing light to pass through a first area thereof. Each of the plurality of light emitting elements includes an active layer; a first cladding layer having the first conductivity type and a second cladding layer having a second conductivity type provided so as to interpose the active layer therebetween; and a current diffusion layer having the second conductivity type. The current diffusion layers respectively included in the plurality of light emitting elements are isolated from one another, and an area including the current diffusion layer is included in the first area.

Abstract: Quantum-well sensing arrays for detecting radiation with two or more wavelengths. Each pixel includes at least two different quantum-well sensing stacks that are biased at a common voltage.

Abstract: An electroluminescence device having a transistor substrate comprising drain electrode pads, each being connected to a drain of a thin film transistor, and capacitors connected to the respective drain electrode pads, and an electroluminescence substrate comprising pairs of electrodes and electroluminescence members each provided between a pair of electrodes, arranged along a plurality of rows and columns, wherein the thin film transistor substrate and the electroluminescence substrate are placed opposite to each other so that the drain electrode pads and the electroluminescence members are opposed to each other, and wherein each drain electrode pad and one electrode of a pair of electrodes are connected through an adhesive electric connection member.

Abstract: The invention relates to an opto-electronic sensor component comprising the following: a first semiconducting layer of predetermined conductivity type and a second layer of different semiconductor or metal conductivity type; a transition region between the two layers; at least one surface region through which the electromagnetic radiation to be detected can pass into the transition region (radiation-side surface region); and an electrode for each layer to connect both layers to an electrical circuit. The electrodes of the two layers are mounted on a surface of the component opposite a radiation-side surface region. This simplifies connection of the sensor component to an electrical circuit mounted on a circuit board or the like.

Abstract: The invention relates to an image sensor for use in the facsimile device, image reader, digital scanner and the like. In this image sensor, the photodiodes and blocking diodes formed on an insulating board are insulated by a transparent interlayer insulating film and are connected in series and opposite polarity by coupling electrodes through contact holes in the transparent interlayer insulating film. This image sensor features a high reading speed and a low dark output noise.

Abstract: An optical module, including a plurality of optical devices and a plurality of circuit devices, which is suitable for a smaller size and a higher density, and a lead frame for the optical module are provided. The optical module comprises optical devices, circuit devices 30, 32 electrically connected to the optical devices; a lead frame mounting these devices on the same main surface; and a first encapsulating resin body 66, transparent to light processed by the optical devices, for encapsulating the optical devices.

Abstract: Si.sub.3 N.sub.4 having high humidity resistance is used as a surface protecting insulating film covering a metal layer. At a bonding pad portion where metal layer is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer and gold layers. At a signal processing circuit portion, light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer and gold layer. Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion simultaneously with the formation of gold layer for the bonding pad portion, the number of manufacturing steps can be reduced.

Abstract: The present invention provides an integrated circuit structure in which an area necessary for making contact is assured in a multi-layered wiring structure even when a design rule is made rigorous. In a structure in which wires separated above and below by an interlayer insulating film are contacted, the wire at the lower layer is patterned into a pattern of the wire at the upper layer which are made to contact. Thereby, the present invention allows the area necessary for making the contact to be largely assured and to deal with the micronization.

Abstract: A photo diode is provided, which can polarize incident light before the light is sensed by the light-sensitive area of the photo diode so that the photo diode is capable of detecting the intensity of the light that is polarized in a specific direction. The photo diode includes a light-sensitive structure which can be a conventional photo diode, and at least one conductive grating formed over the light-sensitive structure, with the conductive grating having a plurality of substantially parallel and equally spaced conductive strips formed from a conductive material. The conductive grating can attenuate the intensity of the light that is polarized in parallel to the conductive grating before the light is sensed by the light-sensitive structure, thereby allowing only those components that are polarized in the direction perpendicular to the conductive grating to pass therethrough. The photo diode is therefore capable of detecting the intensity of the light that is polarized in a specific direction.

Abstract: An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. At least one photo sensor is formed adjacent to the interconnect structure. Each photo sensor includes a pixel electrode which includes a patterned doped semiconductor layer. An I-layer is formed adjacent to the patterned doped semiconductor layer. A transparent electrode is formed adjacent to the I-layer. A method of forming the active pixel sensor includes forming an interconnect structure over a substrate. Next, a doped semiconductor layer is deposited over the interconnect structure. The doped semiconductor layer is etched forming pixel electrode. An I-layer is deposited over the pixel electrodes. Finally, a transparent conductive layer is deposited over the I-layer.

Abstract: An infrared radiation detector device comprises a dipole antenna mounted on a substrate and connected through blocking contacts to a bandgap detector element. The dipole antenna has a length which is approximately one half the wavelength of the incident infrared radiation. The bandgap detector element has linear dimensions which are each substantially smaller than the wavelength of the detected radiation. A group of detector devices are combined to form an array which can produce a pixel signal for an image. Unlike conventional infrared radiation detectors, the disclosed detector device is capable of producing a usable output signal without the need for cooling below ambient temperature.

Abstract: An infrared radiation detector device has an array of detectors each of which comprises a pattern of parallel detector elements. Each detector produces a pixel signal for an image. The elements of the detector are photoconductive or photovoltaic bandgap materials and the elements are spaced apart at a dimension which is equal to or less than the wavelength of the radiation to be received. Additional layered structures above and/or below the detector elements provide impedance matching between free space radiation and the radiation impedance of the detector elements to increase the capture of radiation.

Abstract: A large area avalanche photodiode device that has a plurality of contacts formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a cavity is formed in one layer of the avalanche photodiode that extends to a depletion region that exists in the layer as a result of a voltage applied to the device. The plurality of contacts are formed in the cavity so that each of the contacts are positioned substantially adjacent the depletion region. In another embodiment, a plurality of contacts are formed in a cavity and an isolation structure comprised of a grid of semiconductor material is formed so as to be interposed between adjacent contacts. The isolation structure preferably forms a p-n junction with the surrounding semiconductor material and the p-n junction provides isolation between adjacent contacts.

Abstract: An infrared radiation detector is disclosed which is fabricated on a dielectric substrate. The detector utilizes photosensitive segments which are included within elongate members disposed on the surface of the substrate. The elongate members comprise photosensitive detector segments which are located between and contact non-photosensitive segments and the entirety of each strip is electrically conductive. The elongate members are preferably offset from each other by less than the wavelength of the radiation and the photosensitive segments within the elongate members are also preferably spaced apart by less than the wavelength of the radiation. A reflective plane, typically an aluminum layer, is offset from the plane of the detector segments by less than the wavelength of the radiation. Incident radiation is captured by the overall detector structure which includes the reflective plane and the elongate members which include both photosensitive and non-photosensitive segments.

Abstract: An infrared radiation detector device comprises a dipole antenna mounted on a substrate and connected through blocking contacts to a bandgap detector element. The dipole antenna has a length which is approximately one half the wavelength of the incident infrared radiation. The bandgap detector element has linear dimensions which are each substantially smaller than the wavelength of the detected radiation. A group of detector devices are combined to form an array which can produce a pixel signal for an image. Unlike conventional infrared radiation detectors, the disclosed detector device is capable of producing a usable output signal without the need for cooling below ambient temperature.

Abstract: A multi-layer Auger suppressed diode having at least two exclusion interfaces and at least two extraction interfaces. A specific embodiment has two composite contacts, each consisting of a heavily doped layer (3, 4) and a buffer layer (8, 9) of lower doped, high bandgap material sandwiched between the heavily doped layer and the active region (2) of the device.