Abstract: Semiconductor device packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region and a molding material disposed around the integrated circuit die mounting region. An interconnect structure is disposed over the molding material and the integrated circuit die mounting region. A protection pattern is disposed in a perimeter region of the package. The protection pattern includes a conductive feature.

Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls.

Abstract: A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.

Abstract: A power module includes a base plate, a casing, a substrate unit, a terminal plate, a first resin layer, and a second resin layer. The substrate unit includes a substrate fixed on the base plate, a dam part, a semiconductor chip, a metal member, and a wire. The dam part is formed along an edge of the substrate. The wire includes an electrode plate connection portion, and a chip connection portion. The first resin layer is located inward of the dam part. The chip connection portion and the electrode plate connection portion are located inside the first resin layer. The second resin layer is located on the first resin layer. The upper surface of the metal member is located inside the second resin layer. An elastic modulus of the second resin layer is less than that of the first resin layer.

Abstract: A semiconductor device including a first structure including a first conductive pattern, the first conductive pattern exposed on an upper portion of the first structure, a mold layer covering the first conductive pattern, a second structure on the mold layer, and a through via penetrating the second structure and the mold layer, the through via electrically connected to the first conductive pattern, the through via including a first via segment in the second structure and a second via segment in the mold layer, the second via segment connected to the first via segment, an upper portion of the second via segment having a first width and a middle portion of the second via segment having a second width greater than the first width may be provided.

Abstract: Various layouts for conductive interconnects in the conductor layers in an integrated circuit are disclosed. Some or all of the conductive interconnects are included in a power delivery system. In general, the conductive interconnects in a first conductor layer are arranged according to an orthogonal layout and the conductive interconnects in a second conductor layer are arranged according to a non-orthogonal layout. Conductive stripes in a transition conductor layer positioned between the first and the second conductor layers electrically connect the conductive interconnects in the first conductor layer to the conductive interconnects in the second conductor layer.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: A method includes: disposing a first conductive segment; disposing a first conductive via above the first conductive segment; disposing a first conductive line above the first conductive via; and disposing a second conductive segment electrically coupled to the first conductive line through a third conductive segment, the first conductive segment, and the first conductive via.

Abstract: A display apparatus includes a substrate comprising a display area and a pad area located outside the display area. A plurality of data lines is in the display area. A plurality of connection wires is in the display area. The plurality of connection wires is connected to the plurality of data lines and is configured to transfer data signals from the pad area to the plurality of data lines. An insulating film covers the plurality of connection wires. Each of the plurality of connection wires comprises a plurality of branches that diverge from a body of each connection wire the insulating film comprises a protrusion in a gap between adjacent branches of the plurality of branches.

Abstract: A semiconductor package includes a first semiconductor chip; an encapsulant covering at least a portion of the first semiconductor chip; insulating layers provided on the encapsulant, each of the insulating layers being transparent or translucent; and wiring layers provided on the encapsulant, the wiring layers being partially covered by the insulating layers, wherein an outermost insulating layer of the insulating layers comprises a first region and a second region, a color of the first region is different from a color of the second region, the second region surrounds the first region, and at least one marking pattern comprising at least one step portion is provided in the first region of the outermost insulating layer.

Abstract: The present utility model discloses a package assembly of a sensor, comprising: a redistribution layer having a first face and a second face that are opposite to each other, and a first via that penetrates the first face and the second face; a first die electrically connected to the first face of the redistribution layer; a sensing element electrically connected to the first face of the redistribution layer; a cover body located between the redistribution layer and the sensing element, wherein the cover body has a second via that penetrates the cover body, and the second via communicates with the first via; and a moulding compound comprising a third face and a fourth face that are opposite to each other, wherein the moulding compound encapsulates the first die and the sensing element on the side of the first face of the redistribution layer, and the third face of the moulding compound is combined with the first face of the redistribution layer.

Abstract: An integrated circuit package is disclosed. The integrated circuit package includes a first integrated circuit die, a second integrated circuit die, an organic substrate, wherein both the first integrated circuit die and the second integrated circuit die are connected to the organic substrate, a multi-die interconnect bridge (EMIB) embedded within the organic substrate, and a termination resistor associated with a circuit in the first integrated circuit die, wherein the termination resistor is located within the multi-die interconnect bridge embedded within the organic substrate.

Abstract: A package structure includes a semiconductor die, an antenna substrate structure, a redistribution layer. The semiconductor die laterally encapsulated by a first encapsulant. The antenna substrate structure disposed over the semiconductor die, wherein the antenna substrate structure includes a first type of antenna, and a second type of antenna disposed on a side of the antenna substrate structure facing away from the semiconductor die. The redistribution layer disposed between the semiconductor die and the antenna substrate structure. The semiconductor die, the first type of antenna, and the second type of antenna are electrically coupled through the redistribution layer. The polarization of radiation emitted by the first type of antenna is perpendicular to a polarization of radiation emitted by the second type of antenna.

Abstract: A semiconductor device includes semiconductor elements, an insulating member, first and second terminals and control terminals. The semiconductor elements each include a semiconductor part, a first electrode on the back surface of the semiconductor part, a second electrode and a control electrode on the front surface thereof. The semiconductor elements are electrically connected in series and include first-end and second-end semiconductor elements each provided at an end of the series connection. The insulating member seals the semiconductor elements and includes a first surface and a second surface opposite to the first surface. The first and second terminals are electrically connected to the first electrode of the first-end semiconductor element and the second electrode of the second-end semiconductor element, respectively. Each control terminal is electrically connected to the control electrode.

Abstract: A chip-on-film (COF) package includes a film including a reinforcement area, a bending area and a chip mounting area, a conductive pattern layer disposed on the film in the reinforcement area and in the bending area, and at least partially in the chip mounting area, a chip mounted on a portion of the conductive pattern layer in the chip mounting area, a first insulating layer having a first elastic modulus and extending over the conductive pattern layer in the reinforcement area, and a second insulating layer having a second elastic modulus and extending over the conductive pattern layer in the bending area, wherein the first elastic modulus is greater than the second elastic modulus, and the film is intact in the chip mounting area.

Abstract: A circuit board, a display module, and a display device are provided. The circuit board includes: a base substrate including a first surface and a second surface opposite to each other; bonding pads on the first surface; test pads electrically connected to the bonding pads and disposed on the second surface; a test auxiliary structure on the second surface; and a metal layer on the second surface. The test auxiliary structure overlaps with the test pads along a first direction which is a direction perpendicular to the first surface and the second surface of the base substrate; and the metal layer includes a metal structure for transmitting a first signal and the test auxiliary structure is insulated from the metal structure.

Abstract: Embodiments of structures and methods for forming three-dimensional (3D) memory devices are provided. In an example, a 3D memory device includes a core region and a staircase region. The staircase region includes a plurality of stairs each has at least a conductor/dielectric pair extending in a lateral direction. The staircase region includes a drain-select-gate (DSG) cut structure extending along the lateral direction and a vertical direction, and a plurality of support structures extending in the DSG structure along the vertical direction. Of at least one of the support structures, a dimension along the lateral direction is greater than a dimension along a second lateral direction perpendicular to the lateral direction.

Abstract: A 3D semiconductor device including: a first level including a plurality of first metal layers; a second level overlays the first level and includes at least one single crystal silicon layer, where the second level includes a plurality of transistors and a plurality of second metal layers, each transistor of the plurality of transistors includes a single crystal channel, where the plurality of second metal layers include interconnections between transistors of the plurality of transistors, where the second level is overlaid by a first isolation layer; a connective path from the plurality of transistors to the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, where each of at least one of the plurality of transistors includes a two sided gate, and where the single crystal silicon layer thickness is less than two microns.

Abstract: The present invention provides a semiconductor package structure including a first dielectric layer, an integrated chip, a second power chip, a first patterned conductive layer, a second patterned conductive layer, a first conductive adhesive part, a second conductive adhesive part, a plurality of first conductive connecting elements and a plurality of second conductive connecting elements, and including a build-up circuit structure below, wherein the integrated chip includes a control chip and a first power chip. By means of integrating the control chip and the first power chip into a single chip, volume of semiconductor package structure can be further reduced. In addition, a manufacturing method of a semiconductor package structure is also provided.

Abstract: A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.

Abstract: Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

Abstract: Embodiments disclosed herein include electronic packages and methods of making electronic packages. In an embodiment, the electronic package comprises a package substrate, an array of first level interconnect (FLI) bumps on the package substrate, wherein each FLI bump comprises a surface finish, a first pad on the package substrate, wherein the first pad comprises the surface finish, and wherein a first FLI bump of the array of FLI bumps is electrically coupled to the first pad, and a second pad on the package substrate, wherein the second pad is electrically coupled to the first pad.

Abstract: An integrated circuit (IC) device includes a substrate having opposite first and second sides, an active region over the first side of the substrate, a first transistor and a second transistor over the first side of the substrate, a first conductive pattern over the first side of the substrate, and a second conductive pattern under the second side of the substrate. The first conductive pattern electrically couples a first terminal of the first transistor to a second terminal of the second transistor. The second conductive pattern electrically couples the first terminal of the first transistor to the second terminal of the second transistor.

Abstract: A three-dimensional semiconductor memory device including a first peripheral circuit including different decoder circuits, a first memory on the first peripheral circuit, the first memory including a first stack structure having first electrode layers stacked on one another and first inter-electrode dielectric layers therebetween, a first planarized dielectric layer covering an end of the first stack structure, and a through via that penetrates the end of the first stack structure, the through via electrically connected to one of the decoder circuits, and a second memory on the first memory and including a second stack structure having second electrode layers stacked on one another and second inter-electrode dielectric layers therebetween, a second planarized dielectric layer covering an end of the second stack structure, and a cell contact plug electrically connecting one of the second electrode layers to the through via.

Abstract: In an embodiment, the semiconductor device is surface mountable and comprises a light emitting semiconductor chip which comprises electrical contact pads. An opaque base body laterally surrounds the semiconductor chip. An electrical fanning layer contains electrical conductor tracks. Electrical connection pads are used for external electrical contacting of the semiconductor device. The contact pads and the connection pads are located on different sides of the fanning layer. The contact pads are electrically connected to the associated connection pads by means of the fanning layer. The connection pads are expanded relative to the contact pads.

Abstract: A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.

Abstract: In an assembly in which a space between two elements is filled with a filler containing resin, a configuration that can limit both the size of the assembly and the cost of the fillers is provided. An assembly of stacked elements has: first element having first surface; resin layer that is arranged on first surface and that contains a plurality of fillers; and second element that is arranged on resin layer and that has second surface that is in contact with resin layer. In a section that is perpendicular to second surface, the average flattening ratio of fillers that are in contact with second surface is larger than the average flattening ratio of fillers that are not in contact with second surface. Here, the flattening ratio is a ratio of the maximum length of the filler in a direction parallel to second surface to the maximum thickness of the filler in a direction perpendicular to second surface.

Abstract: The present disclosure is directed to methods for generating a multichip, hybrid node stacked package designs from single chip designs using artificial intelligence techniques, such as machine learning. The methods disclosed herein can facilitate heterogenous integration using advanced packaging technologies, enlarge design for manufacturability of single chip designs, and/or reduce cost to manufacture and/or size of systems provided by single chip designs. An exemplary method includes receiving a single chip design for a single chip of a single process node, wherein the single chip design has design specifications and generating a multichip, hybrid node design from the single chip design by disassembling the single chip design into chiplets having different functions and different process nodes based on the design specifications and integrating the chiplets into a stacked chip package structure.

Abstract: An electronic component package includes a substrate and an electronic component mounted to the substrate, the electronic component including a bond pad. A first antenna terminal is electrically connected to the bond pad, the first antenna terminal being electrically connected to a second antenna terminal of the substrate. A package body encloses the electronic component, the package body having a principal surface. An antenna is formed on the principal surface by applying an electrically conductive coating. An embedded interconnect extends through the package body between the substrate and the principal surface and electrically connects the second antenna terminal to the antenna. Applying an electrically conductive coating to form the antenna is relatively simple thus minimizing the overall package manufacturing cost. Further, the antenna is relatively thin thus minimizing the overall package size.

Abstract: A semiconductor package structure includes a conductive structure, at least one semiconductor element, an encapsulant, a redistribution structure and a plurality of bonding wires. The semiconductor element is disposed on and electrically connected to the conductive structure. The encapsulant is disposed on the conductive structure to cover the semiconductor element. The redistribution structure is disposed on the encapsulant, and includes a redistribution layer. The bonding wires electrically connect the redistribution structure and the conductive structure.

Abstract: A semiconductor package includes a semiconductor device on a first redistribution substrate and having a first sidewall, and a mold layer that covers the semiconductor device and the first redistribution substrate. The first redistribution substrate includes a first redistribution dielectric layer, a first reinforcement pattern on the first redistribution dielectric layer and overlapping the semiconductor device and the mold layer, and first and second bonding pads that penetrate the first redistribution dielectric layer and contact the first reinforcement pattern. The second bonding pad is spaced apart from the first bonding pad in a first direction. The first bonding pad has a first width in a second direction orthogonal to the first direction. When viewed in a plan view, the first reinforcement pattern has a second width in the second direction below the first sidewall. The second width is greater than the first width.

Abstract: Techniques are employed to mitigate the anchoring effects of cavity sidewall adhesion on an embedded conductive interconnect structure, and to allow a lower annealing temperature to be used to join opposing conductive interconnect structures. A vertical gap may be disposed between the conductive material of an embedded interconnect structure and the sidewall of the cavity to laterally unpin the conductive structure and allow uniaxial expansion of the conductive material. Additionally or alternatively, one or more vertical gaps may be disposed within the bonding layer, near the embedded interconnect structure to laterally unpin the conductive structure and allow uniaxial expansion of the conductive material.

Abstract: The noncontact communication medium for a recording medium cartridge includes a substrate, an IC chip that is electrically connected to one end and the other end of an antenna coil formed on the substrate and configured to induce power with application of a magnetic field from an outside, and a stress relaxing member that is provided between the IC chip and the substrate.

Abstract: A lateral power semiconductor device structure comprises a pad-over-active topology wherein on-chip interconnect metallization and contact pad placement is optimized to reduce interconnect resistance. For a lateral GaN HEMT, wherein drain, source and gate finger electrodes extend between first and second edges of an active region, the source and drain buses run across the active region at positions intermediate the first and second edges of the active region, interconnecting first and second portions of the source fingers and drain fingers which extend laterally towards the first and second edges of the active region. External contact pads are placed on the source and drain buses. For a given die size, this interconnect structure reduces lengths of current paths in the source and drain metal interconnect, and provides, for example, at least one of lower interconnect resistance, increased current capability per unit active area, and increased active area usage per die.

Abstract: A semiconductor device of an embodiment includes: a semiconductor layer including an element region and an element isolation region; a first insulation film provided on the semiconductor layer; a first electrode provided on the first insulation film and extending in a first direction; a second electrode provided on the semiconductor layer, arranged in a second direction intersecting with the first direction, and extending in the first direction; a third electrode provided on the semiconductor layer, arranged in the second direction, and extending in the first direction; second insulation films provided between the first insulation film and the semiconductor layer, and interposing the third electrode in the second direction; a first field plate electrode provided on the first electrode and connected to the first electrode; a second field plate electrode provided on the first field plate electrode and connected to the second electrode; and a third field plate electrode provided on the third electrode and connec

Abstract: A semiconductor die includes a semiconductor substrate, a dielectric layer over the semiconductor substrate, a metal structure in the dielectric layer, a first metal pad over the metal structure, a first oxide-based passivation layer over the first metal pad, a second oxide-based passivation layer over the first oxide-based passivation layer, and a bump electrically connected to the first metal pad. The second oxide-based passivation layer has a hardness less than a hardness of the first oxide-based passivation layer.

Abstract: A display apparatus includes a substrate including a display area and a non-display area, a display element layer, a pad group, a touch electrode layer, and a touch insulation layer. The display element layer includes display elements disposed in the display area. The pad group is disposed on the substrate and includes output pads disposed in the non-display area. The output pads include central output pads and outer output pads disposed outside the central output pads in a first direction. The touch electrode layer is disposed on the display element layer. The touch insulation layer is disposed on the display element layer and contacts the touch electrode layer. A groove pattern is defined in the touch insulation layer overlapping the non-display area, and does not overlap at least a predetermined number of the outer output pads in a second direction.

Abstract: A device source wafer includes a wafer substrate, devices formed on or in the wafer substrate at a location on the wafer substrate, and test structures disposed on the wafer substrate connected to some but not all of the devices. The devices include a first device disposed at a first location and a second device disposed at a second different location on the wafer substrate. The test structures include at least a first test structure connected to the first device and a second test structure connected to the second device. The first test structure is adapted to measuring a characteristic of the first device and the second test structure is adapted to measuring the characteristic of the second device. An estimated characteristic of unmeasured devices is derived from the first and second device locations and measured characteristics and the device is selected based on the estimated characteristic.

Abstract: A manufacturing method for a power module capable of shortening a manufacturing time for a power module is obtained. The manufacturing method for a power module includes: a subassembly arranging step of placing a subassembly including a first electrode, a semiconductor device, and a second electrode on a heat sink via a joining material; and a transfer molding step of, after the subassembly arranging step, under a state in which the first electrode, the semiconductor device, and a second-electrode inner portion are arranged in a region surrounded by the heat sink and a molding die, injecting a thermoplastic resin into the region, wherein, in the transfer molding step, the subassembly is joined to the heat sink via the joining material with use of the resin.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A wiring structure includes first to third metal patterns on a substrate. The first metal pattern extends in a second direction and has a first width in a third direction. The second metal pattern extends in the third direction to cross the first metal pattern and have a second width in the second direction. The third metal pattern is connected to the first and second metal patterns at an area where the first and second metal patterns cross each other, and has a substantially rectangular shape with concave portions in each quadrant. The third metal pattern has a third width defined as a minimum distance between opposite ones of the concave portions in a fourth direction having an acute angle to the second and third directions, which is less or equal to than a smaller of the first and second widths.

Abstract: Some embodiments of the present disclosure relate to an integrated chip, including a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. A pair of metal lines are disposed over the dielectric layer and laterally spaced apart from one another by a cavity. A barrier layer structure extends along nearest neighboring sidewalls of the pair of metal lines such that the cavity is defined by inner sidewalls of the barrier layer structure and a top surface of the dielectric layer.

Abstract: A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise an interconnection structure, for example a bond wire, at least a portion of which extends into a dielectric layer utilized to mount a plate, and/or that comprise an interconnection structure that extends upward from the semiconductor die at a location that is laterally offset from the plate.

Abstract: A chip package structure is provided. The chip package structure includes a first wiring substrate including a substrate, a first pad, a second pad, and an insulating layer. The chip package structure includes a nickel-containing layer over the first pad. The chip package structure includes a conductive protection layer over the nickel-containing layer. The conductive protection layer includes tin, and a recess is surrounded by the conductive protection layer and the insulating layer over the first pad. The chip package structure includes a chip over the second surface of the substrate. The chip package structure includes a conductive bump between the second pad and the chip.

Abstract: Provided are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a display region and a binding region located on one side of the display region. The binding region includes: a source driver circuit, a flexible printed circuit board, a first selector circuit, a second selector circuit and a plurality of selection connection lines. For at least one selection connection line of the plurality of selection connection lines, one end of the selection connection line is connected to an input port of the first selector circuit, and the other end is connected to an input port of the second selector circuit. The flexible printed circuit board is disposed on one side, away from the display region, of the source driver circuit, and the plurality of selection connection lines are arranged between the source driving circuit and the flexible printed circuit board.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, a plurality of semiconductor elements disposed on the first surface in a device region, an insulating protective layer, and a connection pad. The second surface is divided into a first region overlapping the device region, and a second region surrounding the first region. The insulating protective layer is disposed on the second surface of the semiconductor substrate, and includes an edge pattern positioned in the second region. The edge pattern includes a thinner portion having a thickness smaller than a thickness of a center portion of the insulating protective layer positioned in the first region and/or an open region exposing the second surface of the semiconductor substrate. The connection pad is disposed on the center portion of the insulating protective layer and is electrically connected to the semiconductor elements.

Abstract: A semiconductor memory structure includes a substrate, a bit line disposed on the substrate, a dielectric liner disposed on a side of the bit line, and a capacitor contact and a filler disposed on the substrate. The bit line extends in a first direction. The dielectric liner includes a first nitride liner disposed on a sidewall of the bit line, an oxide liner disposed on a sidewall of the first nitride liner, and a second nitride liner disposed on a sidewall of the oxide liner. In a second direction perpendicular to the first direction, the capacitor contact is spaced apart from the bit line by the first nitride liner, the oxide liner, and the second nitride liner, and the width of the filler is greater than the width of the capacitor contact. A method for forming the semiconductor memory structure is also provided.

Abstract: The present application provides an SGT MOSFET device, a gate structure of which is a left-right structure, wherein a second field plate conductive material layer with a depth greater than that of a gate conductive material layer is formed between a source conductive material layer and the gate conductive material layer. When the device is reversely biased, depletion capability with respect to the drift region at a side close to a channel region is enhanced due to the feature that a spacing between the second field plate conductive material layer and the drift region is less than a spacing between the source conductive material layer and the drift region. The present application further provides a method for manufacturing an SGT MOSFET device.

Abstract: A method for producing a semiconductor arrangement includes applying a metallization layer on an upper main side of a lower semiconductor chip, structuring the metallization layer, and fastening an upper semiconductor chip on the upper main side of the lower semiconductor chip by a bonding material, wherein the metallization layer is structured such that the metallization layer has an increased roughness along a contour of the upper semiconductor chip in comparison with the rest of the metallization layer, wherein wetting of the upper main side of the lower semiconductor chip by the bonding material is limited by a structure in the metallization layer to a region below the upper semiconductor chip.

Abstract: Power electronics arrangement including a printed circuit board and at least one power module fastened on the printed circuit board, which has one or more electronic components potted by a potting compound. At least one module connecting point of the power module is electrically contacted with at least one board connecting point of the printed circuit board by an electrically conductive pin. A base section of the pin is fastened on the module connecting point or on the board connecting point, and the end of the pin opposite to the base section is pressed in the installation position into a contacting opening assigned or assignable to the respective other connecting point.