Schottky Diode (epo) Patents (Class 257/E21.359)
  • Patent number: 11081597
    Abstract: A lateral diode with high breakdown voltage capability and a method for forming the lateral diode. The lateral diode has an anode, a cathode, a substrate having a first conductivity type, an epitaxial layer having formed on the substrate, a current region formed in the epitaxial layer and on the substrate, a first well coupled to the anode, a second well coupled to the cathode, a third well with light doping concentration formed beside the first well, and a guard ring with heavy doping concentration formed in the first well and beside the third well, and between the third well and the second well is a drift region, a lateral breakdown occurs in the third well, the drift region and the second well when a reverse voltage added on the lateral diode is equal to or higher than a breakdown voltage.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: August 3, 2021
    Assignee: Chengdu Monolithic Power Systems Co., Ltd.
    Inventors: Yanjie Lian, Daping Fu
  • Patent number: 11069530
    Abstract: A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: July 20, 2021
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Sebastian Meier, Helmut Rinck, Mike Mittelstaedt
  • Patent number: 10074539
    Abstract: A semiconductor device according to an embodiment includes a SiC layer having a first and a second plane; a first electrode having a first region in the SiC layer, the inclination angle of a side surface of the first region being 60 to 85 degrees; a second electrode; a first gate electrode; a second gate electrode facing the first gate electrode; first and second gate insulating layers; a first region of a first conductivity type in the SiC layer; a second region of a second conductivity type between the first region and the first gate insulating layer; a third region of the second conductivity type between the first region and the second gate insulating layer; a sixth region of the second conductivity type between the first region and the first region; and a seventh region of the second conductivity type between the first region and the sixth region.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: September 11, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Teruyuki Ohashi, Hiroshi Kono, Souzou Kanie, Tatsuo Shimizu
  • Patent number: 9917180
    Abstract: The present invention concerns a monolithically merged trenched-and-implanted Bipolar Junction Transistor (TI-BJT) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector. The base electrode is formed on an implanted base contact region at the bottom surface of the trench. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: March 13, 2018
    Assignee: United Silicon Carbide, Inc.
    Inventors: Anup Bhalla, Leonid Fursin
  • Patent number: 9472630
    Abstract: A process for fabricating a tapered field plate dielectric for high-voltage semiconductor devices is disclosed. The process may include depositing a thin layer of oxide, depositing a polysilicon hard mask, depositing a resist layer and etching a trench area, performing deep silicon trench etch, and stripping the resist layer. The process may further include repeated steps of depositing a layer of oxide and anisotropic etching of the oxide to form a tapered wall within the trench. The process may further include depositing poly and performing further processing to form the semiconductor device.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: October 18, 2016
    Assignee: Power Integrations, Inc.
    Inventors: Vijay Parthasarathy, Sujit Banerjee, Wayne B. Grabowski
  • Patent number: 8987124
    Abstract: A silicon carbide substrate having a main face is prepared. By applying thermal oxidation to the main face of the silicon carbide substrate at a first temperature, an oxide film is formed on the main face. After the oxide film is formed, heat treatment is applied to the silicon carbide substrate at a second temperature higher than the first temperature. An opening exposing a portion of the main face is formed at the oxide film. A Schottky electrode is formed on the main face exposed by the opening.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: March 24, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Tomihito Miyazaki, Toru Hiyoshi
  • Patent number: 8969180
    Abstract: A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: March 3, 2015
    Assignee: Avogy, Inc.
    Inventors: Hui Nie, Andrew P. Edwards, Donald R. Disney, Richard J. Brown, Isik C. Kizilyalli
  • Patent number: 8969993
    Abstract: A wide gap semiconductor device includes a substrate and a Schottky electrode. The substrate formed of a wide gap semiconductor material has a main face, and includes a first-conductivity-type region and a second-conductivity-type region. The Schottky electrode is arranged adjoining the main face of the substrate. At the substrate, there is foamed a trench having a side face continuous with the main face and a bottom continuous with the side face. The Schottky electrode adjoins the first-conductivity-type region at the side face of the trench and the main face, and adjoins the second-conductivity-type region at the bottom of the trench. The side face of the trench is inclined relative to the main face of the substrate.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: March 3, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiji Wada, Takeyoshi Masuda, Toru Hiyoshi
  • Patent number: 8969994
    Abstract: An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: March 3, 2015
    Assignee: Avogy, Inc.
    Inventors: Madhan M. Raj, Brian Alvarez, David P. Bour, Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli
  • Patent number: 8963276
    Abstract: A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n?-type semiconductor layer; and a p-type surface layer formed in a central portion of each of cells. In a contact cell, the p-type buried layer is in contact with the p-type surface layer. The semiconductor device further includes: a p+-type contact layer formed on the p-type surface layer of the contact cell; and an anode electrode provided on the n?-type semiconductor layer. The anode electrode forms a Schottky junction with the n?-type semiconductor layer and forms an ohmic junction with the p+-type contact layer.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: February 24, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hiroshi Watanabe, Naoki Yutani, Yoshiyuki Nakaki, Kenichi Ohtsuka
  • Patent number: 8927999
    Abstract: An edge terminated semiconductor device is described including a GaN substrate; a doped GaN epitaxial layer grown on the GaN substrate including an ion-implanted insulation region, wherein the ion-implanted region has a resistivity that is at least 90% of maximum resistivity and a conductive layer, such as a Schottky metal layer, disposed over the GaN epitaxial layer, wherein the conductive layer overlaps a portion of the ion-implanted region. A Schottky diode is prepared using the Schottky contact structure.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: January 6, 2015
    Assignee: Avogy, Inc.
    Inventors: Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David Bour, Richard J. Brown, Thomas R. Prunty
  • Patent number: 8916946
    Abstract: The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: December 23, 2014
    Assignees: Nippon Telegraph and Telephone Corporation, NTT Electronics Corporation
    Inventors: Yoshiyuki Doi, Yoshifumi Muramoto, Takaharu Ohyama
  • Patent number: 8912622
    Abstract: A semiconductor device includes a first-conductivity-type semiconductor substrate, a first first-conductivity-type semiconductor layer, a second first-conductivity-type semiconductor layer, a second-conductivity-type bottom layer, a Schottky metal, and a cathode electrode. The first first-conductivity-type semiconductor layer is provided on the semiconductor substrate and has a lower first-conductivity-type impurity concentration than the semiconductor substrate. The second first-conductivity-type semiconductor layer is provided on the first first-conductivity-type semiconductor layer and has a higher first-conductivity-type impurity concentration than the first first-conductivity-type semiconductor layer. The Schottky metal is provided on the second first-conductivity-type semiconductor layer. The Schottky metal contacts with partly the first first-conductivity-type semiconductor layer.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: December 16, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masatoshi Arai, Takashi Tabuchi
  • Patent number: 8860169
    Abstract: The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: October 14, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Kunihiko Kato, Hideki Yasuoka, Masatoshi Taya, Masami Koketsu
  • Patent number: 8823013
    Abstract: A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and joins the first Schottky contact metal layer. A first. Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: September 2, 2014
    Assignee: Power Integrations, Inc.
    Inventors: Ting Gang Zhu, Marek Pabisz
  • Patent number: 8816468
    Abstract: A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more lightly doped than the substrate. A second layer having a second type of conductivity is formed on the substrate and a metal layer is disposed over the second layer. The second layer is lightly doped so that a Schottky contact is formed between the metal layer and the second layer. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: August 26, 2014
    Assignee: Vishay General Semiconductor LLC
    Inventors: Chih-Wei Hsu, Florin Udrea, Yih-Yin Lin
  • Patent number: 8809107
    Abstract: A method for making a Schottky barrier diode includes the following steps. A first metal layer, a second metal layer and a carbon nanotube composite material are provided. The carbon nanotube composite material is applied on the first metal layer and the second metal layer to form a semiconductor layer. The carbon nanotube composite material includes an insulated polymer and a number of carbon nanotubes dispersed in the insulated polymer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer.
    Type: Grant
    Filed: December 26, 2011
    Date of Patent: August 19, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Chun-Hua Hu, Chang-Hong Liu, Shou-Shan Fan
  • Patent number: 8772900
    Abstract: The present invention discloses a trench Schottky barrier diode (SBD) and a manufacturing method thereof. The trench SBD includes: an epitaxial layer, formed on a substrate; multiple mesas, defined by multiple trenches; a field plate, formed on the epitaxial layer and filled in the multiple trenches, wherein a Schottky contact is formed between the field plate and top surfaces of the mesas; a termination region, formed outside the multiple mesas and electrically connected to the field plate; a field isolation layer, formed on the upper surface and located outside the termination region; and at least one mitigation electrode, formed below the upper surface outside the termination region, and is electrically connected to the field plate through the field isolation layer, wherein the mitigation electrode and the termination region are separated by part of a dielectric layer and part of the epitaxial layer.
    Type: Grant
    Filed: July 8, 2012
    Date of Patent: July 8, 2014
    Assignee: Richteck Technology Corporation
    Inventors: Tsung-Yi Huang, Chien-Hao Huang
  • Patent number: 8765523
    Abstract: A method for manufacturing a semiconductor device includes the steps of preparing a substrate made of silicon carbide and having an n type region formed to include a main surface, forming a p type region in a region including the main surface, forming an oxide film on the main surface across the n type region and the p type region, by heating the substrate having the p type region formed therein at a temperature of 1250° C. or more, removing the oxide film to expose at least a part of the main surface, and forming a Schottky electrode in contact with the main surface that has been exposed by removing the oxide film.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: July 1, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiji Wada, Takeyoshi Masuda
  • Patent number: 8749014
    Abstract: The present invention discloses a Schottky diode. The Schottky diode comprises a cathode region, an anode region and a guard ring region. The anode region may comprise a metal Schottky contact. The guard ring region may comprise an outer guard ring and a plurality of inner guard stripes inside the outer guard ring. And wherein the inner guard stripe has a shallower junction depth than the outer guard ring.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: June 10, 2014
    Assignee: Monolithic Power Systems, Inc.
    Inventor: Ji-Hyoung Yoo
  • Patent number: 8716716
    Abstract: A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: May 6, 2014
    Assignee: Avogy, Inc.
    Inventors: Hui Nie, Andrew P. Edwards, Donald R. Disney, Richard J. Brown, Isik C. Kizilyalli
  • Patent number: 8709885
    Abstract: A method of manufacturing Schottky diodes in a CMOS process includes forming wells, including first wells (16) for forming CMOS devices and second wells (18) for forming Schottky devices. Then, transistors are formed in the first wells, the second wells protected with a protection layer (20) and suicide contacts (40) formed to source and drain regions in the first wells. The protection layer is then removed, a Schottky material deposited and etched away except in a contact region in each second well to form a Schottky contact between the Schottky material (74) and each second well (18).
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: April 29, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Georgios Vellianitis, Gilberto Curatola, Kyriaki Fotopoulou, Nader Akil
  • Patent number: 8704322
    Abstract: The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: April 22, 2014
    Assignees: Nippon Telegraph and Telephone Corporation, NTT Electronics Corporation
    Inventors: Yoshiyuki Doi, Yoshifumi Muramoto, Takaharu Ohyama
  • Patent number: 8698227
    Abstract: A mesa-type bidirectional Shockley diode delimited on its two surfaces by a peripheral groove filled with a glassivation including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of the regions of the first conductivity type, at the interface between the substrate and the corresponding layer of the second conductivity type, each buried region being complementary in projection with the other; and a peripheral ring under the external periphery of each of the glassivations, of same doping profile as the buried regions.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: April 15, 2014
    Assignee: STMicroelectronics (Tours) SAS
    Inventors: Yannick Hague, Samuel Menard
  • Patent number: 8685848
    Abstract: A silicon oxide film is formed on an epitaxial layer by dry thermal oxidation, an ohmic electrode is formed on a back surface of a SiC substrate, an ohmic junction is formed between the ohmic electrode and the back surface of the SiC substrate by annealing the SiC substrate, the silicon oxide film is removed, and a Schottky electrode is formed on the epitaxial layer. Then, a sintering treatment is performed to form a Schottky junction between the Schottky electrode and the epitaxial layer.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: April 1, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yoshinori Matsuno, Yoichiro Tarui
  • Publication number: 20140061848
    Abstract: An integrated circuit structure includes a substrate, a semiconductor device supported by the substrate, and a guard ring structure disposed around the semiconductor device, the guard ring structure forming a Schottky junction. In an embodiment, the Schottky junction is formed from a p-type metal contact and an n-type guard ring. In an embodiment, the guard ring structure is electrically coupled to a positive or negative supply voltage.
    Type: Application
    Filed: September 4, 2012
    Publication date: March 6, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Feng Chang, Jam-Wem Lee
  • Publication number: 20140061731
    Abstract: A device includes a semiconductor substrate, first and second electrodes supported by the semiconductor substrate, laterally spaced from one another, and disposed at a surface of the semiconductor substrate to form an Ohmic contact and a Schottky junction, respectively. The device further includes a conduction path region in the semiconductor substrate, having a first conductivity type, and disposed along a conduction path between the first and second electrodes, a buried region in the semiconductor substrate having a second conductivity type and disposed below the conduction path region, and a device isolating region electrically coupled to the buried region, having the second conductivity type, and defining a lateral boundary of the device. The device isolating region is electrically coupled to the second electrode such that a voltage at the second electrode during operation is applied to the buried region to deplete the conduction path region.
    Type: Application
    Filed: September 6, 2012
    Publication date: March 6, 2014
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Weize Chen, Xin Lin, Patrice M. Parris
  • Publication number: 20140048815
    Abstract: A Schottky barrier diode (SBD) is disclosed, which includes: a gallium nitride (GaN) layer, formed on a substrate; an aluminum gallium nitride (AlGaN), formed on the GaN layer; an insulation layer, formed on the AlGaN layer; an anode conducive layer, formed on the insulation layer, wherein Schottky contact is formed between a part of the anode conductive layer and the AlGaN layer or between a part of the anode conductive layer and the GaN layer, and another part of the anode conductive layer is separated from the AlGaN layer by the insulation layer; and a cathode conductive layer, formed on the AlGaN layer, wherein an ohmic contact is formed between the cathode conductive layer and the GaN layer or between the cathode conductive layer and the AlGaN layer, and wherein the anode conductive layer is not directly connected to the cathode conductive layer.
    Type: Application
    Filed: August 20, 2012
    Publication date: February 20, 2014
    Inventors: Tsung-Yi Huang, Chien-Wei Chiu, Chih-Fang Huang, Tsung-Yu Yang
  • Publication number: 20140048902
    Abstract: An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.
    Type: Application
    Filed: August 14, 2012
    Publication date: February 20, 2014
    Applicant: AVOGY , INC.
    Inventors: Madhan M. Raj, Brian Alvarez, David P. Bour, Andrew P. Edward, Hui Nie, Isik C. Kizilyalli
  • Publication number: 20140045306
    Abstract: A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.
    Type: Application
    Filed: August 10, 2012
    Publication date: February 13, 2014
    Applicant: AVOGY, INC.
    Inventors: David P. Bour, Thomas R. Prunty, Hui Nie, Madhan M. Raj
  • Patent number: 8642453
    Abstract: Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed using an SOI wafer. One area of the island is heavily-doped with an n-type or p-type dopant, one area is lightly-doped with the same dopant, and an isolation structure is formed on the top surface above a junction between the two areas. A metal silicide region contacts the lightly-doped side of the island forming a Schottky barrier. Another discrete metal silicide region contacts the heavily-doped area of the island forming an electrode to the Schottky barrier (i.e., a Schottky barrier contact). The two metal silicide regions are isolated from each other by the isolation structure. Contacts to each of the discrete metal silicide regions allow a forward and/or a reverse bias to be applied to the Schottky barrier.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: February 4, 2014
    Assignee: International Business Machines Corporation
    Inventor: Edward J. Nowak
  • Patent number: 8637872
    Abstract: A high-performance semiconductor device capable of suppressing a leak current with little electric field concentration, reducing an invalid region in a PN junction region, securing a sufficient area for a Schottky junction region, and achieving efficient and easy manufacturing, in which, in one surface of a semiconductor substrate (1) having a first conduction type made of SiC, a PN junction region (7a) and a Schottky junction region (7b) are provided, in the PN junction region (7a), a convex portion (2a) which has a trapezoidal shape in sectional view and includes a second conduction type layer (2) provided on the semiconductor substrate (1) and a contact layer (3) which is in ohmic contact with the second conduction type layer (2) of the convex portion (2a) are provided, and Schottky electrode (4) covers the side surface of the convex portion (2a) and the contact layer (3), and is provided continuously over the PN junction region (7a) and the Schottky junction region (7b).
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: January 28, 2014
    Assignee: Showa Denko K.K.
    Inventor: Akihiko Sugai
  • Publication number: 20140001594
    Abstract: A Schottky diode includes a device structure having a central portion and a plurality of fingers. Distal portions of the fingers overlie leakage current control (LCC) regions. An LCC region is relatively narrow and deep, terminating in proximity to a buried layer of like polarity. Under reverse bias, depletion regions forming in an active region lying between the buried layer and the LCC regions occupy the entire extent of the active region and thereby provide a carrier depleted wall. An analogous depletion region occurs in the active region residing between any pair of adjacent fingers. If the fingers include latitudinal oriented fingers and longitudinal oriented fingers, depletion region blockades in three different orthogonal orientations may occur. The formation of the LCC regions may include the use of a high dose, low energy phosphorous implant using an LCC implant mask and the isolation structures as an additional hard mask.
    Type: Application
    Filed: June 29, 2012
    Publication date: January 2, 2014
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Weize Chen, Xin Lin, Patrice M. Parris
  • Patent number: 8604583
    Abstract: The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: December 10, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Kunihiko Kato, Hideki Yasuoka, Masatoshi Taya, Masami Koketsu
  • Patent number: 8592293
    Abstract: A method for forming a Schottky barrier diode on a SiGe BiCMOS wafer, including forming a structure which provides a cutoff frequency (Fc) above about 1.0 THz. In embodiments, the structure which provides a cutoff frequency (Fc) above about 1.0 THz may include an anode having an anode area which provides a cutoff frequency (FC) above about 1.0 THz, an n-epitaxial layer having a thickness which provides a cutoff frequency (FC) above about 1.0 THz, a p-type guardring at an energy and dosage which provides a cutoff frequency (FC) above about 1.0 THz, the p-type guardring having a dimension which provides a cutoff frequency (FC) above about 1.0 THz, and a well tailor with an n-type dopant which provides a cutoff frequency (FC) above about 1.0 THz.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: November 26, 2013
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey B. Johnson, Xuefeng Liu, Bradley A. Orner, Robert M. Rassel
  • Patent number: 8581359
    Abstract: A Schottky barrier diode includes a GaN freestanding substrate having a front surface, a GaN epitaxial layer deposited on the front surface, and an insulation layer deposited on the GaN epitaxial layer at a front surface and having an opening. Furthermore, the Schottky barrier diode also includes an electrode. The electrode is configured by a Schottky electrode provided in the opening in contact with the GaN epitaxial layer, and a field plate electrode connected to the Schottky electrode and also overlapping the insulation layer. The GaN freestanding substrate has a dislocation density of at most 1×108 cm?2.
    Type: Grant
    Filed: August 22, 2008
    Date of Patent: November 12, 2013
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Taku Horii, Tomihito Miyazaki, Makoto Kiyama
  • Publication number: 20130277791
    Abstract: In one general aspect, an apparatus includes a metal or metal silicide contact layer disposed on an n-well region of a semiconductor substrate to form a primary Schottky diode. The apparatus includes a p-well guard ring region of the semiconductor substrate abutting the primary Schottky diode. The metal silicide contact layer has a perimeter portion extending over the p-well guard ring region of the semiconductor substrate and the p-well guard ring region has a doping level establishing a work function difference relative to the perimeter portion of the metal silicide contact layer to form a guard ring Schottky diode. The guard ring Schottky diode is in series with a p-n junction interface of the p-well region and the n-well region and the guard ring Schottky diode has a polarity opposite to that of the primary Schottky diode.
    Type: Application
    Filed: April 19, 2012
    Publication date: October 24, 2013
    Inventors: Chris Nassar, Dan Hahn, Sunglyong Kim, Jongjib Kim
  • Publication number: 20130256680
    Abstract: The present invention discloses a vertical semiconductor device and a manufacturing method thereof. The vertical semiconductor device includes: a substrate having a first surface and a second surface, the substrate including a conductive array formed by multiple conductive plugs through the substrate; a semiconductor layer formed on the first surface, the semiconductor layer having a third surface and a fourth surface, wherein the fourth surface faces the first surface; a first electrode formed on the third surface; and a second electrode formed on the second surface for electrically connecting to the conductive array.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 3, 2013
    Inventors: Chien-Wei Chiu, Tsung-Yi Huang
  • Publication number: 20130240980
    Abstract: In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by blocking the formation of one or more n+ source regions and providing a metalized region adjacent to an underlying n-epitaxial region.
    Type: Application
    Filed: March 19, 2012
    Publication date: September 19, 2013
    Applicant: Texas Instruments Incorporated
    Inventors: Venkat Raghavan, Andrew D. Strachan
  • Patent number: 8513764
    Abstract: A Schottky diode including a semiconductor region, a first terminal comprising a metal or a metal silicide or being metallic, and a second terminal comprising at least a portion of the semiconductor region. The diode further includes an at least partly conductive material or a material capable of holding a charge in close proximity to, or in contact with, or surrounding one of the first and second terminals, a field insulator located at least partly in the semiconductor region, a dielectric region located over the semiconductor region between the field insulator and the one of the first and second terminals for isolating the conductive or charge-holding material from the semiconductor region, and wherein the dielectric region comprises insulating regions of different thicknesses.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: August 20, 2013
    Assignee: X-Fab Semiconductor Foundries AG
    Inventors: Paul R. Stribley, Suba Chithambaram Subramaniam
  • Patent number: 8513763
    Abstract: There was a problem that it was difficult to manufacture silicon carbide semiconductor devices with suppressed variations in characteristics without increasing the number of process steps. A silicon carbide semiconductor device according to the present invention includes an N type SiC substrate and an N type SiC epitaxial layer as a silicon carbide semiconductor substrate of a first conductivity type, a plurality of recesses intermittently formed in a surface of the N type SiC epitaxial layer, P type regions as second-conductivity-type semiconductor layers formed in the N type SiC epitaxial layer in the bottoms of the plurality of recesses, and a Schottky electrode selectively formed over the surface of the N type SiC epitaxial layer, wherein the plurality of recesses all have an equal depth.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: August 20, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yoichiro Tarui
  • Patent number: 8497563
    Abstract: A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos.
    Type: Grant
    Filed: September 15, 2008
    Date of Patent: July 30, 2013
    Assignee: Robert Bosch GmbH
    Inventors: Ning Qu, Alfred Goerlach
  • Patent number: 8492254
    Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first trench and a second trench in an n-type substrate surface, the first trenches being spaced apart from each other, the second trench surrounding the first trenches, the second trench being wider than the first trench. The method also includes forming a gate oxide film on the inner surfaces of the first and second trenches, and depositing an electrically conductive material to the thickness a half or more as large as the first trench width. The method further includes removing the electrically conductive material using the gate oxide film as a stopper layer, forming an insulator film thicker than the gate oxide film, and polishing the insulator film by CMP for exposing the n-type substrate and the electrically conductive material in the first trench.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: July 23, 2013
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Tomonori Mizushima
  • Publication number: 20130181319
    Abstract: The present invention discloses a trench Schottky barrier diode (SBD) and a manufacturing method thereof. The trench SBD includes: an epitaxial layer, formed on a substrate; multiple mesas, defined by multiple trenches; a field plate, formed on the epitaxial layer and filled in the multiple trenches, wherein a Schottky contact is formed between the field plate and top surfaces of the mesas; a termination region, formed outside the multiple mesas and electrically connected to the field plate; a field isolation layer, formed on the upper surface and located outside the termination region; and at least one mitigation electrode, formed below the upper surface outside the termination region, and is electrically connected to the field plate through the field isolation layer, wherein the mitigation electrode and the termination region are separated by part of a dielectric layer and part of the epitaxial layer.
    Type: Application
    Filed: July 8, 2012
    Publication date: July 18, 2013
    Inventors: Tsung-Yi Huang, Chien-Hao Huang
  • Publication number: 20130149850
    Abstract: A method for manufacturing a semiconductor device includes the steps of preparing a substrate made of silicon carbide and having an n type region formed to include a main surface, forming a p type region in a region including the main surface, forming an oxide film on the main surface across the n type region and the p type region, by heating the substrate having the p type region formed therein at a temperature of 1250° C. or more, removing the oxide film to expose at least a part of the main surface, and forming a Schottky electrode in contact with the main surface that has been exposed by removing the oxide film.
    Type: Application
    Filed: November 6, 2012
    Publication date: June 13, 2013
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventor: Sumitomo Electric Industries, Ltd.
  • Publication number: 20130126888
    Abstract: An edge terminated semiconductor device is described including a GaN substrate; a doped GaN epitaxial layer grown on the GaN substrate including an ion-implanted insulation region, wherein the ion-implanted region has a resistivity that is at least 90% of maximum resistivity and a conductive layer, such as a Schottky metal layer, disposed over the GaN epitaxial layer, wherein the conductive layer overlaps a portion of the ion-implanted region. A Schottky diode is prepared using the Schottky contact structure.
    Type: Application
    Filed: November 21, 2011
    Publication date: May 23, 2013
    Inventors: Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David Bour, Richard J. Brown, Thomas R. Prunty
  • Publication number: 20130130485
    Abstract: A method for fabricating a Schottky device includes the following sequences. First, a substrate with a first conductivity type is provided and an epitaxial layer with the first conductivity type is grown on the substrate. Then, a patterned dielectric layer is formed on the epitaxial layer, and a metal silicide layer is formed on a surface of the epitaxial layer. A dopant source layer with a second conductivity type is formed on the metal silicide layer, followed by applying a thermal drive-in process to diffuse the dopants inside the dopant source layer into the epitaxial layer. Finally, a conductive layer is formed on the metal silicide layer.
    Type: Application
    Filed: December 28, 2011
    Publication date: May 23, 2013
    Inventors: Yung-Fa Lin, Shou-Yi Hsu, Meng-Wei Wu, Main-Gwo Chen, Chia-Hao Chang, Chia-Wei Chen
  • Publication number: 20130119505
    Abstract: Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process.
    Type: Application
    Filed: November 11, 2011
    Publication date: May 16, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David L. Harame, Qizhi Liu, Robert M. Rassel
  • Publication number: 20130122696
    Abstract: A silicon carbide substrate having a main face is prepared. By applying thermal oxidation to the main face of the silicon carbide substrate at a first temperature, an oxide film is formed on the main face. After the oxide film is formed, heat treatment is applied to the silicon carbide substrate at a second temperature higher than the first temperature. An opening exposing a portion of the main face is formed at the oxide film. A Schottky electrode is formed on the main face exposed by the opening.
    Type: Application
    Filed: October 11, 2012
    Publication date: May 16, 2013
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: SUMITOMO ELECTRIC INDUSTRIES, LTD.
  • Publication number: 20130112991
    Abstract: The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n? epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n? epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n? epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.
    Type: Application
    Filed: February 13, 2012
    Publication date: May 9, 2013
    Applicant: HYUNDAI MOTOR COMPANY
    Inventors: Kyoung Kook Hong, Jong Seok Lee