By Selective Deposition Of Conductive Material In Vias, E.g., Selective Chemical Vapor Deposition On Semiconductor Material, Plating (epo) Patents (Class 257/E21.586)
Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
Type:
Application
Filed:
October 5, 2005
Publication date:
March 22, 2007
Applicant:
Enthone Inc.
Inventors:
Qingyun Chen, Charles Valverde, Vincent Paneccasio, Nicolai Petrov, Daniel Stritch, Christian Witt, Richard Hurtubise
Abstract: The disclosure relates to a method and apparatus for enhancing copper film quality with a two-step deposition. The two step deposition may include depositing a first copper film by electrochemical plating, annealing the first copper film at a desired temperature for a duration of time to remove any impurities, depositing a second copper film and annealing the second copper film for a duration of time to remove impurities. The second copper film can be deposited by electrochemical plating without HCl/C-based additive. The second copper film can also be deposited by sputtering to avoid impurities including C, Cl and S.
Abstract: A method for manufacturing a metal structure using a trench includes etching a semiconductor substrate to form a trench, depositing a seed layer over the semiconductor substrate including in the trench, stacking an insulating layer over the seed layer, removing a portion of the insulating layer to expose a portion of the seed layer at a bottom of the trench, filling the trench with a metal material, and removing the seed layer and the insulating layer on the semiconductor substrate. As a result, a subsequent process in forming a multi-layered structure may be easily carried out, thereby simplifying a manufacturing process.
Type:
Grant
Filed:
December 19, 2003
Date of Patent:
March 13, 2007
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Dong-sik Shim, Kyung-won Na, Sang-on Choi, Hae-seok Park
Abstract: A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.
Abstract: A method of forming a protective layer over a metal filled semiconductor feature to prevent metal oxidation including providing a semiconductor process wafer comprising an insulating dielectric layer having an opening for forming a semiconductor feature; blanket depositing a metal layer over the opening to substantially fill the opening; and, blanket depositing a protective layer comprising at least one of a oxidation resistant metal and metal nitride over the metal layer.
Abstract: Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.
Type:
Grant
Filed:
June 8, 2004
Date of Patent:
June 27, 2006
Assignee:
The Regents of the University of California
Inventors:
Michael P. Surh, William D. Wilson, Troy W. Barbee, Jr., Stephen M. Lane
Abstract: A method of creating a multi-layered barrier for use in an interconnect, a barrier for an interconnect, and an interconnect including the barrier are disclosed. The method includes creating the multi-layered barrier in a recess of the device terminal by use of a single electroplating chemistry to enhance protection against voiding and de-lamination due to the diffusion of copper, whether by self-diffusion or electro-migration. The barrier includes at least a first layer of nickel-rich material and a second layer of copper-rich material. The barrier enables use of higher current densities for advanced complementary metal-oxide semiconductors (CMOS) designs, and extends the reliability of current CMOS designs regardless of solder selection. Moreover, this technology is easily adapted to current methods of fabricating electroplated interconnects such as C4s.
Type:
Grant
Filed:
April 28, 2004
Date of Patent:
January 31, 2006
Assignee:
International Business Machines Corporation
Inventors:
Panayotis C. Andricacos, Tien-Jen J. Cheng, Emanuel I. Cooper, David E. Eichstadt, Jonathan H. Griffith, Randolph F. Knarr, Roger A. Quon, Erik J. Roggeman