Abstract: A semiconductor device with a C-shaped active area and an electronic apparatus including the same is disclosed. The semiconductor device may include a first device and a second device opposite to each other on a substrate, each of which includes: a channel portion extending vertically on the substrate; source/drain portions located at the upper and lower ends of the channel portion and along the channel portion, the source/drain portions and the channel portion constitute a C-shaped structure; and a gate stack overlapping the channel portion on an inner sidewall of C-shaped structure, the gate stack has a portion surrounded by the C-shaped structure. The openings of the C-shaped structures of the two devices are opposite to each other. At least a portion of the gate stack of the first device close to the channel portion and that of the second device close to the channel portion are substantially coplanar.

Abstract: Embodiments of the invention are directed to a method that includes forming a first channel fin in an n-type region of a substrate, forming a second channel fin in a p-type region of the substrate, and depositing a gate dielectric over the substrate and the first and second channel fins. A work function metal stack is deposited over the gate dielectric, the first fin in the n-type region, and the second fin in the p-type region. The work function metal stack over the gate dielectric and the first fin in the n-type region forms a first work function metal stack. The work function metal stack over the gate dielectric and the second fin in the p-type region forms a second work function metal stack. The first work function metal stack includes at least one shared layer of work function metal that is shared with the second work function metal stack.

Abstract: An FinFET and a method for manufacturing the same are disclosed. The FinFET comprises: a semiconductor substrate; a stress layer on the semiconductor substrate; a semiconductor fin on the stress layer, the semiconductor fin having two sidewalls extending in its length direction; a gate dielectric on the sidewalls of the semiconductor fin; a gate conductor on the gate dielectric; and a source region and a drain region at two ends of the semiconductor fin, wherein the stress layer extends below and in parallel with the semiconductor fin, and applies stress to the semiconductor fin in the length direction of the semiconductor fin.

Abstract: A method for fabricating a MOSFET having an active area and an edge termination area is disclosed. The method includes forming a first plurality of implants at the bottom of trenches located in the active area and in the edge termination area. A second plurality of implants is formed at the bottom of the trenches located in the active area. The second plurality of implants formed at the bottom of the trenches located in the active area causes the implants formed at the bottom of the trenches located in the active area to reach a predetermined concentration. In so doing, the breakdown voltage of both the active and edge termination areas can be made similar and thereby optimized while maintaining advantageous RDson.

Abstract: One aspect of the present subject matter relates to a memory. A memory embodiment includes a nanofin transistor having a first source/drain region, a second source/drain region above the first source/drain region, and a vertically-oriented channel region between the first and second source/drain regions. The nanofin transistor also has a surrounding gate insulator around the nanofin structure and a surrounding gate surrounding the channel region and separated from the nanofin channel by the surrounding gate insulator. The memory includes a data-bit line connected to the first source/drain region, at least one word line connected to the surrounding gate of the nanofin transistor, and a stacked capacitor above the nanofin transistor and connected between the second source/drain region and a reference potential. Other aspects are provided herein.

Abstract: One semiconductor device includes first to third gate electrodes arranged inside a first active region and embedded in first to third trenches extending in a first direction, a first semiconductor pillar positioned between the first and second trenches, a second semiconductor pillar positioned between the second and third trenches, a first vertical transistor having the first and second gate electrodes as the double gate electrodes therefor, and a second vertical transistor having the second and third gate electrodes as the double gate electrodes therefor. The second gate electrode is shared by the first vertical transistor and the second vertical transistor.

Abstract: A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough.

Abstract: A method including patterning a thickness dimension of an interconnect material into a thickness dimension for a wiring line with one or more vias extending from the wiring line and introducing a dielectric material on the interconnect material. A method including depositing and patterning an interconnect material into a wiring line and one or more vias; and introducing a dielectric material on the interconnect material such that the one or more vias are exposed through the dielectric material. An apparatus including a first interconnect layer in a first plane and a second interconnect in a second plane on a substrate; and a dielectric layer separating the first and second interconnect layers, wherein the first interconnect layer comprises a monolith including a wiring line and at least one via, the at least one via extending from the wiring line to a wiring line of the second interconnect layer.

Abstract: This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells constituting an active cell has a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding the cell. The trenched gate further has a bottom-shielding electrode filled with a gate material disposed below and insulated from the trenched gate. At least one of the cells constituting a source-contacting cell surrounded by the trench with a portion functioning as a source connecting trench is filled with the gate material for electrically connecting between the bottom-shielding electrode and a source metal disposed directly on top of the source connecting trench.

Abstract: A semiconductor device has a substrate and trench formed partially through the substrate. A drain region is formed in the substrate as a second surface of the substrate. An epitaxial region is formed in the substrate over the drain region. A vertical drift region is formed along a sidewall of the trench. An insulating material is deposited within the trench. A channel region is formed along the sidewall of the trench above the insulating material. The channel region is separated from the insulating material. A gate structure is formed within the trench adjacent to the channel region. The gate structure includes an insulating layer formed along the sidewall of the trench adjacent to the channel region and polysilicon layer formed within the trench over the insulating layer. A source region is formed in a first surface of the substrate contacting the channel region.

Abstract: A method for fabricating a semiconductor device including a semiconductor substrate having a trench formed therein. A migration assist layer is formed in the trench and on the substrate. A buried layer in formed in the trench by migrating material from the migration assist layer and the semiconductor substrate.

Abstract: A semiconductor device includes a first-conductivity-type semiconductor layer, a base region of a second-conductivity-type formed in an upper portion of the first-conductivity-type semiconductor layer, first though third trenches penetrating through the base region and reaching to the first-conductivity-type semiconductor layer, the first through third trenches being linked to one another, a source interconnect layer buried in the first through third trenches, the source interconnect layer including a protruding portion, a gate electrode buried in the first trench and the third trench, and formed over the source interconnect layer, a source metal contacting the protruding portion of the source interconnect layer, and a gate metal contacting the gate electrode in the third trench. A contact face between the source metal and the protruding portion at the second trench is formed higher than a contact face between the gate metal and the gate electrode at the third trench.

Abstract: A switching element is provided having a semiconductor substrate. A trench gate electrode is formed in the upper surface of the semiconductor substrate. An n-type first semiconductor region, a p-type second semiconductor region, and an n-type third semiconductor region are formed in a region in contact with a gate insulating film in the semiconductor substrate. At a position below the second semiconductor region, there is formed a p-type fourth semiconductor region connected to the second semiconductor region and opposing the gate insulating film via the third semiconductor region and containing boron. A high-concentration-carbon containing region having a carbon concentration higher than that of a semiconductor region exposed on the lower surface of the semiconductor substrate is formed in at least a part of the portion of the third semiconductor region, positioned between the fourth semiconductor region and the gate insulating film, that is in contact with the fourth semiconductor region.

Abstract: A semiconductor device having a plurality of transistors includes a termination area that features a transistor with an asymmetric gate.

Abstract: A vertical transistor structure includes a substrate, a plurality of pillars located on the substrate and spaced from each other at a selected distance, a gate line and a plurality of conductors. The pillars are aligned in a straight line in a first direction and have respectively a primary control wall along the first direction and two ancillary control walls perpendicular to the primary control wall. The gate line is connected to the primary control wall in the first direction through a first isolated layer. The conductors are interposed between the ancillary control walls through second isolated layers. By providing the gate line merely on the primary control wall and the conductors to aid the gate line to control ON/OFF of the pillars, problems of etching and separating gate material during gradually shrunken feature size process that are difficult to control etching positions and etching duration can be prevented.

Abstract: A semiconductor device and manufacturing method for the same are disclosed. The method includes providing a substrate that has an insulator layer and a semiconductor layer overlying the insulator layer. The method further includes forming a hard mask layer pattern on the semiconductor layer and etching the semiconductor layer using the patterned hard mask layer to form portions having different thickness in the semiconductor layer. The method also includes performing an oxygen-based treatment on the semiconductor layer to form a supporting oxide layer. A portion of the semiconductor layer is buried in the supporting oxide layer.

Abstract: A complementary tunneling field effect transistor and a method for forming the same are provided. The complementary tunneling field effect transistor comprises: a substrate; an insulating layer, formed on the substrate; a first semiconductor layer, formed on the insulating layer and comprising first and second doped regions; a first type TFET vertical structure formed on a first part of the first doped region and a second type TFET vertical structure formed on a first part of the second doped region, in which a second part of the first doped region is connected with a second part of the second doped region and a connecting portion between the second part of the first doped region and the second part of the second doped region is used as a drain output; and a U-shaped gate structure, formed between the first type TFET vertical structure and the second type TFET vertical structure.

Abstract: Processes for preparing a stressed semiconductor wafer and processes for preparing devices including a stressed semiconductor wafer are provided herein. An exemplary process for preparing a stressed semiconductor wafer includes providing a semiconductor wafer of a first material having a first crystalline lattice constant. A stressed crystalline layer of a second material having a different lattice constant from the first material is pseudomorphically formed on a surface of the semiconductor wafer. A first via is etched through the stressed crystalline layer and at least partially into the semiconductor wafer to release stress in the stressed crystalline layer adjacent the first via, thereby transferring stress to the semiconductor wafer and forming a stressed region in the semiconductor wafer. The first via in the semiconductor wafer is filled with a first filler material to impede dissipation of stress in the semiconductor wafer.

Abstract: A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer.

Abstract: A first local wiring includes a convex portion protruding from a base and a protrusion protruding from a side surface of the convex portion. The convex portion of the first local wiring is connected to a lower conductive region of a first transistor while the protrusion is connected to a gate electrode of a second transistor. Moreover, the lower surface of the protrusion of the first local wiring is arranged at a height equal to or lower than the upper surface of the gate electrode of the second transistor.

Abstract: A super-junction trench MOSFET is disclosed for high voltage device by applying a first doped column region of first conductivity type between a pair of second doped column regions of second conductivity type adjacent to sidewalls of a pair of deep trenches with buried voids in each unit cell for super-junction. Meanwhile, at least one trenched gate and multiple trenched source-body contacts are formed in each unit cell between the pair of deep trenches.

Abstract: A method and circuit for implementing an embedded dynamic random access memory (eDRAM), and a design structure on which the subject circuit resides are provided. The embedded dynamic random access memory (eDRAM) circuit includes a stacked field effect transistor (FET) and capacitor. The capacitor is fabricated directly on top of the FET to build the eDRAM.

Abstract: Embodiments of the invention relate to field effect transistors. The field effect transistor includes a gate electrode for providing a gate field, a first electrode including a conductive material having a low carrier density and a low density of electronic states, a second electrode, and a semiconductor. Contact barrier modulation includes barrier height lowering of a Schottky contact between the first electrode and the semiconductor. In some embodiments of the invention, a vertical field effect transistor employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.

Abstract: Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Abstract: A slit recess channel gate is further provided. The slit recess channel gate includes a substrate, a gate dielectric layer, a first conductive layer and a second conductive layer. The substrate has a first trench. The gate dielectric layer is disposed on a surface of the first trench and the first conductive layer is embedded in the first trench. The second conductive layer is disposed on the first conductive layer and aligned with the first conductive layer above the main surface, wherein a bottom surface area of the second conductive layer is substantially smaller than a top surface area of the second conductive layer. The present invention also provides a method of forming the slit recess channel gate.

Abstract: A semiconductor device includes a first insulating film formed between a gate electrode and a first flat semiconductor layer, and a sidewall-shaped second insulating film formed to surround an upper sidewall of a first columnar silicon layer while contacting an upper surface of the gate electrode and to surround a sidewall of the gate electrode and the first insulating film. The semiconductor device further includes a metal-semiconductor compound formed on each of an upper surface of a first semiconductor layer of the second conductive type formed in the entirety or the upper portion of the first flat semiconductor layer, and an upper surface of the second semiconductor layer of the second conductive type formed in the upper portion of the first columnar semiconductor layer.

Abstract: A vertical semiconductor device with improved junction profile and a method of manufacturing the same are provided. The vertical semiconductor device includes a pillar vertically extended from a surface of a semiconductor substrate, a silicon layer formed in a bit line contact region of one sidewall of the pillar, and a junction region formed within a portion of the pillar contacting with the silicon layer.

Abstract: A vertical transistor structure includes a substrate, a plurality of pillars located on the substrate and spaced from each other at a selected distance, a gate line and a plurality of conductors. The pillars are aligned in a straight line in a first direction and have respectively a primary control wall along the first direction and two ancillary control walls perpendicular to the primary control wall. The gate line is connected to the primary control wall in the first direction through a first isolated layer. The conductors are interposed between the ancillary control walls through second isolated layers. By providing the gate line merely on the primary control wall and the conductors to aid the gate line to control ON/OFF of the pillars, problems of etching and separating gate material during gradually shrunken feature size process that are difficult to control etching positions and etching duration can be prevented.

Abstract: A method for forming a vertical channel transistor in a semiconductor memory device includes: forming a plurality of pillars over a substrate so that the plurality of pillars are arranged in a first direction and a second direction crossing the first direction, and so that each of the pillars has a hard mask pattern thereon; forming an insulation layer to fill a regions between the pillars; forming a mask pattern over a resultant structure including the insulation layer, wherein the mask pattern has openings exposing gaps between each two adjacent pillars in the first direction; etching the insulation layer to a predetermined depth using the mask pattern as an etching barrier to form trenches; and filling the trenches with a conductive material to form word lines extending in the first direction.

Abstract: A semiconductor device and method of manufacturing the same. The method includes: defining a first active area and a second active area on a substrate, the first and second active areas being in a line form, forming a first main trench and a second main trench on the substrate, forming a first sub-trench and a second sub-trench in bottoms of the first and second main trenches, respectively, forming a buried insulation layer filling the first and second sub-trenches, partially exposing the substrate at an area where the first active area crosses with the first sub-trench and an area where the second active area crosses with the second sub-trench and forming the first buried bit line and the second buried bit line on the buried insulation layer, and the first and second buried bit lines being extended in parallel to each other.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a memory film, and a SiGe film. The stacked body includes a plurality of conductive layers and a plurality of insulating layers alternately stacked above the substrate. The memory film includes a charge storage film. The memory film is provided on a sidewall of a memory hole punched through the stacked body. The SiGe film is provided inside the memory film in the memory hole.

Abstract: In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties.

Abstract: Methods of forming an array of memory cells and memory cells that have pillars. Individual pillars can have a semiconductor post formed of a bulk semiconductor material and a sacrificial cap on the semiconductor post. Source regions can be between columns of the pillars, and gate lines extend along a column of pillars and are spaced apart from corresponding source regions. Each gate line surrounds a portion of the semiconductor posts along a column of pillars. The sacrificial cap structure can be selectively removed to thereby form self-aligned openings that expose a top portion of corresponding semiconductor posts. Individual drain contacts formed in the self-aligned openings are electrically connected to corresponding semiconductor posts.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer and having an active cell area and an edge termination area. The edge termination area comprises a plurality P-channel MOSFETs. By connecting the gate to the drain electrode, the P-channel MOSFET transistors formed on the edge termination are sequentially turned on when the applied voltage is equal to or greater than the threshold voltage Vt of the P-channel MOSFET transistors, thereby optimizing the voltage blocked by each region.

Abstract: One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment, a fin is formed from a crystalline substrate. A first source/drain region is formed in the substrate beneath the fin. A surrounding gate insulator is formed around the fin. A surrounding gate is formed around the fin and separated from the fin by the surrounding gate insulator. A second source/drain region is formed in a top portion of the fin. Various embodiments etch a hole in a layer over the substrate, form sidewall spacers in the hole, form a fin pattern from the sidewall spacers, and etch into the crystalline substrate to form the fin from the substrate using a mask corresponding to the fin pattern. Other aspects are provided herein.

Abstract: An integrated structure includes a plurality of split-gate trench MOSFETs. A plurality of trenches is formed within the silicon carbide substrate composition, each trench is lined with a passivation layer, each trench being substantially filled with a first conductive region a second conductive region and an insulating material having a dielectric constant similar to a dielectric constant of the silicon carbide substrate composition. The first conductive region is separated from the passivation layer by the insulating material. The first and second conductive regions form gate regions for each trench MOSFET. The first conductive region is separated from the second conductive region by the passivation layer. A doped body region of a first conductivity type formed at an upper portion of the substrate composition and a doped source region of a second conductivity type formed inside the doped body region.

Abstract: A method includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein having a bottom surface spaced from the first surface by less than the step height, forming a gate structure, and forming a contact engaging the gate structure over the recess. A different aspect involves an apparatus that includes a substrate having a first surface, an isolation structure disposed partly in the substrate and having a second surface higher than the first surface by a step height, a recess extending downwardly from the second surface, the recess having a bottom surface spaced from the first surface by less than the step height, a gate structure, and a contact engaging the gate structure over the recess.

Abstract: A semiconductor structure comprises a semiconductor layer of a first conductivity type, trenches extending into the semiconductor layer, and a conductive layer of a second conductivity type lining sidewalls and bottom of each trench and forming PN junctions with the semiconductor layer. A first plurality of the trenches are disposed in a field effect transistor region that comprises a body region of the first conductivity type, source regions of the second conductivity type in the body region, and gate electrodes isolated from the body region and the source regions by a gate dielectric. A second plurality of the trenches are disposed in a Schottky region that comprises a conductive material contacting mesa surfaces of the semiconductor layer between adjacent ones of the second plurality of the trenches to form Schottky contacts. The conductive material also contacts the conductive layer proximate an upper portion of the second plurality of the trenches.

Abstract: A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.

Abstract: Vertically stacked Field Effect Transistors (FETs) are created where a first FET and a second FET are controllable independently. The vertically stacked FETs may be connected in series or in parallel, thereby suitable for use as a portion of a NAND circuit or a NOR circuit. Epitaxial growth over a source and drain of a first FET, and having similar doping to the source and drain of the first FET provide a source and drain of a second FET. An additional epitaxial growth of a type opposite the doping of the source and drain of the first FET provides a body for the second FET.

Abstract: A complementary tunneling field effect transistor and a method for forming the same are provided. The complementary tunneling field effect transistor comprises: a substrate; an insulating layer, formed on the substrate; a first semiconductor layer, formed on the insulating layer and comprising first and second doped regions; a first type TFET vertical structure formed on a first part of the first doped region and a second type TFET vertical structure formed on a first part of the second doped region, in which a second part of the first doped region is connected with a second part of the second doped region and a connecting portion between the second part of the first doped region and the second part of the second doped region is used as a drain output; and a U-shaped gate structure, formed between the first type TFET vertical structure and the second type TFET vertical structure.

Abstract: A semiconductor device includes a first semiconductor pillar, a first insulating film covering a side face of the first semiconductor pillar, a first electrode covering the first insulating film, a second semiconductor pillar, a second insulating film covering a side face of the second semiconductor pillar, and a second electrode covering the second insulating film. The top level of the second electrode is higher than the top level of the first electrode.

Abstract: Dual orientation of finFET transistors in a static random access memory (SRAM) cell allows aggressive scaling to a minimum feature size of 15 nm and smaller using currently known masking techniques that provide good manufacturing yield. A preferred layout and embodiment features inverters formed from adjacent, parallel finFETs with a shared gate and different conductivity types developed through a double sidewall image transfer process while the preferred dimensions of the inverter finFETs and the pass transistors allow critical dimensions of all transistors to be sufficiently uniform despite the dual transistor orientation of the SRAM cell layout.

Abstract: Provided is a semiconductor memory device. The semiconductor memory device may include a local bitline extending in a direction substantially vertical to an upper surface of a semiconductor substrate and a local wordline intersecting the local bitline. The local bitline is electrically connected to a bitline channel pillar penetrating a gate of a bitline transistor, and the local wordline is electrically connected to a wordline channel pillar penetrating a gate of a wordline transistor.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of trenches, including applying a first mask, forming a first polysilicon region in at least some of the plurality of trenches, forming a inter-polysilicon dielectric region and a termination protection region, including applying a second mask, forming a second polysilicon region in the at least some of the plurality of trenches, forming a first electrical contact to the first polysilicon region and forming a second electrical contact to the second polysilicon region, including applying a third mask, disposing a metal layer, and forming a source metal region and a gate metal region, including applying a fourth mask.

Abstract: A semiconductor device includes: a semiconductor substrate configured to include a plurality of trenches therein; a plurality of buried bit lines each configured to fill a portion of each trench; a plurality of active pillars each formed in an upper portion of each buried bit line; a plurality of vertical gates each configured to surround each active pillar; and a plurality of word lines configured to couple neighboring vertical gates with each other.

Abstract: A method of forming a semiconductor device comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate, forming a first region of the first conductivity type in the semiconductor layer, and forming a control region over the semiconductor layer and over part of the first region. A mask layer is formed over the semiconductor layer and outlines a first portion of a surface of the semiconductor layer over part of the first region. Semiconductor material of a second conductivity type is provided to the outlined first portion to provide a second region in the semiconductor layer.

Abstract: In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

Abstract: A method for fabricating a semiconductor device includes etching a semiconductor substrate using a hard mask layer as a barrier to form a trench defining a plurality of active regions, forming a gap-fill layer to gap-fill a portion of the inside of the trench so that the hard mask layer becomes a protrusion, forming spacers covering both sides of the protrusion, removing one of the spacers using a doped etch barrier as an etch barrier, and etching the gap-fill layer using a remaining spacer as an etch barrier to form a side trench exposing one side of the active region.

Abstract: The present invention features a field effect transistor that includes a semiconductor substrate having gate, source and drain regions; and a p-n junction formed on the semiconductor substrate and in electrical communication with the gate, drain and source regions to establish a desired breakdown voltage. In one embodiment, gate region further includes a plurality of spaced-apart trench gates with the p-n junction being defined by an interface between an epitaxial layer in which the trench gates are formed and the interface with a metallization layer. The breakdown voltage provided is defined, in part by the number of p-n junctions formed. In another embodiment, the p-n junctions are formed by generating a plurality of spaced-apart p-type regions in areas of the epitaxial layer located adjacent to the trench gates.