Abstract: A package structure including an interposer, at least one semiconductor die and an insulating encapsulation is provided. The interposer includes a semiconductor substrate and an interconnect structure disposed on the semiconductor substrate, the interconnect structure includes interlayer dielectric films and interconnect wirings embedded in the interlayer dielectric films, the semiconductor substrate includes a first portion and a second portion disposed on the first portion, the first interconnect structure is disposed on the second portion, and a first maximum lateral dimension of the first portion is greater than a second maximum lateral dimension of the second portion. The at least one semiconductor die is disposed over and electrically connected to the interconnect structure. The insulating encapsulation is disposed on the first portion, wherein the insulating encapsulation laterally encapsulates the least one semiconductor die and the second portion.

Abstract: Example embodiments relate to an electronic package, to an electronic device comprising such a package, and to a lead frame for manufacturing the electronic package. Some examples may particularly relate to electronic packages in which radiofrequency (RF) circuitry is arranged. According to the example embodiments, a width of the clamping portion is substantially larger than the width of the lead end portion, the width of the clamping portion being chosen such that bending of the inner part and/or body part relative to the outer part during the application of the molding compound was substantially prevented thereby having avoided flash and/or bleed of molding compound onto the inner part.

Abstract: A package including a frame having an opening for receiving a sensor module, wherein the frame comprises at least one electrical connection which is directed into the opening and which is arranged on an insulation layer applied to the frame, and wherein the insulation layer is connected to the frame at an insertion side of the frame, from which side the sensor module is to be inserted into the opening, and is bent along the inner side of the frame proceeding from the insertion side, such that the at least one electrical connection directed to the opening is electrically couplable to the associated sensor module connection in an arrangement.

Abstract: A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.

Abstract: A semi-conductor module with an encapsulating mass that covers a semi-conductor component, in which the encapsulating mass is cement.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A packaged assembly is disclosed, including thermal interface material dispensed on an organic package and methods of manufacturing. The method includes dispensing a thermal interface material (TIM) on an electronic assembly. The method further includes removing volatile species of the TIM, prior to lid placement on the electronic assembly. The method further includes placing the lid on the TIM, over the electronic assembly. The method further includes pressing the lid onto the electronic assembly.

Abstract: A light emitting diode package including a package body with a cavity, a plurality of light emitting diode (LED) chips in the cavity, a plurality of wires connected to the plurality of LED chips, and a plurality of lead frames in the package body, wherein the lead frames comprise a first lead frame electrically connected to a first electrode of a first LED chip, a second lead frame electrically connected to a second electrode of the first LED chip and a second electrode of a second LED chip, a third lead frame electrically connected to a first electrode of the second LED chip, and fourth lead frame electrically connected to a second electrode of a third LED chip. Further, ends of the lead frames are exposed outside of the package body and penetrate the package body, and the first electrodes are P electrodes and the second electrodes are N electrodes.

Abstract: An electronic device includes a semiconductor chip. A contact element, an electrical connector, and a dielectric layer are disposed on a first surface of a conductive layer facing the semiconductor chip. A first conductive member is disposed in a first recess of the dielectric layer. The first conductive member electrically connects the contact element of the semiconductor chip with the conductive layer. A second conductive member is disposed in a second recess of the dielectric layer. The second conductive member electrically connects the conductive layer with the electrical connector.

Abstract: A structure may include a spacer element overlying a first portion of a first surface of a substrate; first terminals at a second surface of the substrate opposite the first surface; and second terminals overlying a third surface of the spacer element facing away from the first surface. Traces extend from the second terminals along an edge surface of the spacer element that extends from the third surface towards the first surface, and may be electrically coupled between the second terminals and the first terminals or electrically conductive elements at the first surface. The spacer element may at least partially define a second portion of the first surface, which is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some of the conductive elements are at the second portion and may permit connection with such microelectronic element.

Abstract: The present invention specifies a leadframe for electronic components and a corresponding manufacturing process, in which the bonding islands are formed by welding individual, prefabricated segments of a bonding-capable material onto a stamped leadframe.

Abstract: A semiconductor die has outer leads with an outer lead external connection section and an outer lead bonding section. Inner leads are spaced from the outer leads. Each of the inner leads has an inner lead external connection section spaced and downset from an inner lead bonding section. A non-electrically conductive die mount is molded onto upper surface areas of each inner lead external connection section. A semiconductor die is mounted on the non-electrically conductive die mount and bond wire provide interconnects for selectively electrically connecting bonding pads of the die to the inner lead bonding sections and at least one outer lead bonding section. A mold compound covers the semiconductor die, the bond wires, and the outer and inner lead bonding sections.

Abstract: A stacked semiconductor device includes a unit component including a wiring portion formed by electrically connecting a die pad of and a lead of a lead frame, and a semiconductor package whose connection terminal is connected to the lead, wherein the unit component is stacked, and the leads located to upper and lower sides are connected mutually via an electrode.

Abstract: A semiconductor device according to the present disclosure includes: a plate (13) having a through hole (15); a metal column (16) fixed to the through hole with an insulating member (17) interposed therebetween, and having a projection projecting from the upper surface of the plate; a semiconductor element (12) fixed to the projection; a lead frame (11) electrically connected to the semiconductor element; and a package (14) covering the semiconductor element, and also covering at least part of each of the plate, the metal column, and the lead frame. The lower surface (13b) of the plate is exposed from the package.

Abstract: A semiconductor device includes a semiconductor element and a lead frame. The lead frame includes a first lead, a second lead, a third lead, a fourth lead, and a fifth lead placed parallel to one another. The first and second leads are placed adjoining to each other and constitute a first lead group, and the third and fourth leads are placed adjoining to each other and constitute a second lead group. The spacing between the first lead group and the fifth lead, the spacing between the second lead group and the fifth lead, and the spacing between the first lead group and the second lead group are larger than the spacing between the first lead and the second lead and the spacing between the third lead and the fourth lead.

Abstract: A semiconductor device includes at least a die carried by a substrate, a plurality of bond pads disposed on the die, a plurality of conductive components, and a plurality of bond wires respectively connected between the plurality of bond pads and the plurality of conductive components. The plurality of bond pads respectively correspond to a plurality of signals, and include a first bond pad configured for transmitting/receiving a first signal and a second bond pad configured for transmitting/receiving a second signal. The plurality of conductive components include a first conductive component and a second conductive component. The first conductive component is bond-wired to the first bond pad, and the second conductive component is bond-wired to the second bond pad. The first conductive component and the second conductive component are separated by at least a third conductive component of the plurality of conductive components, and the first signal is asserted when the second signal is asserted.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a leadframe having a mounting region; applying a mounting structure in the mounting region; mounting an integrated circuit die on the mounting structure; forming an encapsulation on the integrated circuit die and having an encapsulation cavity, the encapsulation cavity shaped by the mounting structure; forming a lead having a lead protrusion from the leadframe, the lead protrusion below a horizontal plane of the integrated circuit die; and removing the mounting structure for exposing the integrated circuit die.

Abstract: An integrated circuit (IC) device includes an electromigration resistant feed line. The IC device includes a substrate including active circuitry. A back end of the line (BEOL) metallization stack includes an interconnect metal layer that is coupled to a bond pad by the EM resistant feed line. A bonding feature is on the bond pad. The feed line includes a uniform portion and patterned trace portion that extends to the bond pad which includes at least three sub-traces that are electrically in parallel. The sub-traces are sized so that a number of squares associated with each of the sub-traces are within a range of a mean number of squares for the sub-traces plus or minus twenty percent or a current density provided to the bonding feature through each sub-trace is within a range of a mean current density provided to the bonding feature plus or minus twenty percent.

Abstract: A chip assembly includes a chip, a paddle, an interface layer, a frequency extending device, and lands. The chip has contacts. The interface layer is disposed between the chip and the paddle. The frequency extending device has at least a conductive layer and a dielectric layer. The conductive layer has conductive traces. The frequency extending device is disposed adjacent to the side of the chip and overlying the paddle. The lands are disposed adjacent to the side of the paddle. The contacts are connected to the conductive traces. The conductive traces are connected to the lands. The frequency extending device is configured to reduce impedance discontinuity such that the impedance discontinuity produced by the frequency extending device is less than an impedance discontinuity that would be produced by bond wires each having a length greater than or substantially equal to the distance between the contacts and the lands.

Abstract: A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes lithographically patterning the top metal layer into the contact zones and the contact enhancement zones; then forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.

Abstract: An electronic device includes a semiconductor chip. A contact element, an electrical connector, and a dielectric layer are disposed on a first surface of a conductive layer facing the semiconductor chip. A first conductive member is disposed in a first recess of the dielectric layer. The first conductive member electrically connects the contact element of the semiconductor chip with the conductive layer. A second conductive member is disposed in a second recess of the dielectric layer. The second conductive member electrically connects the conductive layer with the electrical connector.

Abstract: A luminous body comprises a transparent plastic moulding with indentations, and LED DIEs disposed within the indentations. One side of each LED DIE lies approximately flush with an upper side of the moulding, and each LED DIE is connected to an electricity supply via electrical conductors disposed on the moulding. A method for producing such a luminous body is also disclosed.

Abstract: Provided is a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes a package main body with a cavity, a plurality of light emitting diode chips, a wire, and a plurality of lead frames. The plurality of light emitting diode chips are mounted in the cavity. The wire is connected to an electrode of at least one light emitting diode chip. The plurality of lead frames are formed in the cavity, and at least one lead frame is electrically connected to the light emitting diode chip or a plurality of wires.

Abstract: A complete power management system implemented in a single surface mount package. The system may be drawn to a DC to DC converter system and includes, in a leadless surface mount package, a driver/controller, a MOSFET transistor, passive components (e.g., inductor, capacitor, resistor), and optionally a diode. The MOSFET transistor may be replaced with an insulated gate bipolar transistor, IGBT in various embodiments. The system may also be a power management system, a smart power module or a motion control system. The passive components may be connected between the leadframe connections. The active components may be coupled to the leadframe using metal clip bonding techniques. In one embodiment, an exposed metal bottom may act as an effective heat sink.

Abstract: A lead frame includes: a chip-mounting region provided on a front surface; a lead region including a plurality of concave and convex sections arranged in an in-plane direction of the chip-mounting region; and a terminal arranged in the concave section. A thickness of the lead region from the front surface is smaller than a thickness of the terminal from the front surface.

Abstract: Semiconductor devices and methods of manufacturing and packaging thereof are disclosed. In one embodiment, a semiconductor device includes an integrated circuit and a plurality of copper pillars coupled to a surface of the integrated circuit. The plurality of copper pillars has an elongated shape. At least 50% of the plurality of copper pillars is arranged in a substantially centripetal orientation.

Abstract: In a manufacturing method of a semiconductor device having a multilevel interconnect layer including a low-k layer, a two-step cutting technique is used for dicing. After formation of a groove in a semiconductor wafer with a tapered blade, the groove is divided with a straight blade thinner than the groove width. The multilevel interconnect layer portion is cut while being covered with a tapered face and then the wafer is separated with a thin blade which is not brought into contact with the multilevel interconnect layer portion. The wafer can thus be diced without damaging a relatively fragile low-k layer.

Abstract: A lead frame for a quad flat no-lead (QFN) type semiconductor device package includes a die pad, a plurality of leads that surround the die pad. The outer edge of leads includes a channel that extends from a lower surface to an upper surface of the leads. A semiconductor die is attached to the die pad. An inner edge of each lead is electrically connected to a corresponding bonding pad on the semiconductor die. The assembly is covered with an encapsulation material except that the outer edge of each lead and the corresponding channel are exposed. The channel allows solder to flow up the outer edge of a lead when the QFN device is soldered to a substrate, which improves the ability to perform visual inspection of the solder-lead connection.

Abstract: A method includes: forming a photoresist pattern to form each of a semiconductor element mounting section on which a semiconductor element is mounted, semiconductor element electrode connection terminals for connection with electrodes of the semiconductor element, and a first outer frame section on a first surface of a metal plate; forming a photoresist pattern to form each of external connection terminals, a second outer frame section, and grooves in at least a part of the second outer frame section on a second surface of the metal plate; etching a metal plate exposing section, in which the metal plate of the second surface is exposed, to form holes that do not pass through the metal plate exposing section and grooves that run from an inside to an outside of the second outer frame section; coating a pre-mold resin on the holes and the grooves, and heating the pre-mold resin under pressure using a flat-bed press to form a resin layer; and etching the first surface to form the semiconductor element mounting se

Abstract: A flip chip semiconductor package has a substrate with a plurality of active devices. A contact pad is formed on the substrate in electrical contact with the plurality of active devices. A passivation layer, second barrier layer, and adhesion layer are formed between the substrate and an intermediate conductive layer. The intermediate conductive layer is in electrical contact with the contact pad. A copper inner core pillar is formed by plating over the intermediate conductive layer. The inner core pillar has a rectangular, cylindrical, toroidal, or hollow cylinder form factor. A solder bump is formed around the inner core pillar by plating solder material and reflowing the solder material to form the solder bump. A first barrier layer and wetting layer are formed between the inner core pillar and solder bump. The solder bump is in electrical contact with the intermediate conductive layer.

Abstract: An integrated circuit package system includes: providing a lead having a lead connection surface for connectivity to a next level system; attaching an integrated circuit over the lead having the lead connection surface substantially within a region below a perimeter of the integrated circuit without a die paddle, a substrate conductor, or a redistribution layer; and attaching a die connector to the integrated circuit and the lead.

Abstract: The advanced quad flat non-leaded package structure includes a carrier, a chip, a plurality of wires, and a molding compound. The carrier includes a die pad and a plurality of leads. The leads include first leads disposed around the die pad, second leads disposed around the first leads and at least an embedded lead portion between the first leads and the second leads. The wires are disposed between the chip, the first leads and the embedded lead portion. The advanced quad flat non-leaded package structures designed with the embedded lead portion can provide better electrical connection.

Abstract: A semiconductor device according to the present disclosure includes: a plate (13) having a through hole (15); a metal column (16) fixed to the through hole with an insulating member (17) interposed therebetween, and having a projection projecting from the upper surface of the plate; a semiconductor element (12) fixed to the projection; a lead frame (11) electrically connected to the semiconductor element; and a package (14) covering the semiconductor element, and also covering at least part of each of the plate, the metal column, and the lead frame. The lower surface (13b) of the plate is exposed from the package.

Abstract: An integrated circuit package system is provided including forming a lead frame including forming an inner lead having a planar surface, the inner lead extending inwardly from the lead frame and forming a stiffening structure integral with the lead frame for maintaining the planar surface; encapsulating the inner lead with an electrical connection to an integrated circuit die and with a first inner lead body of the inner lead exposed; and singulating the inner lead from the lead frame.

Abstract: A semiconductor package includes leads around the periphery of a chip and leads under the chip having connecting segments for increasing I/O capability. A filling material may be used under the chip, which may provide a lead locking function. Various methods of forming the semiconductor package are further provided.

Abstract: Provided is a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes a package main body with a cavity, a plurality of light emitting diode chips, a wire, and a plurality of lead frames. The plurality of light emitting diode chips are mounted in the cavity. The wire is connected to an electrode of at least one light emitting diode chip. The plurality of lead frames are formed in the cavity, and at least one lead frame is electrically connected to the light emitting diode chip or a plurality of wires.

Abstract: A non-leaded integrated circuit package system includes: a die paddle of a lead frame; a dual row of terminals including an outer terminal and an inner terminal; and an inner terminal and an adjacent inner terminal to form a fused lead.

Abstract: A lead frame of the present invention includes: a die pad on which a device is mounted; a first connection terminal which is provided around the die pad, and the lower surface of which serves as an external terminal; a second connection terminal which is provided around the die pad and electrically independent of the die pad, and the upper surface of which serves as an external terminal; a bent part provided between the first and the second connection terminals and connecting the first and the second connection terminals; and an outer frame. The bent part is bending-processed in a direction perpendicular to a face of the die pad. Within the outer frame, electronic component regions are formed adjoining each other and each including a die pad, and the first and the second connection terminals. The adjoining electronic components are connected through the first or the second connection terminal.

Abstract: A chip package structure including a chip, a lead frame, first bonding wires and second bonding wires is provided. The chip has an active surface and chip bonding pads disposed thereon. The lead frame is fixed on the chip and the lead frame includes inner leads, at least one bus bar, an insulating layer and transfer bonding pads. The bus bar is located between the chip bonding pads and the inner leads. The insulating layer is disposed on the bus bar and the transfer bonding pads are disposed thereon. The inner leads and the bus bar are located above the active surface. The chip and the insulating layer are located respectively on two opposite surfaces of the bus bar. The first bonding wires respectively connect the chip bonding pads and the transfer bonding pads. The second bonding wires respectively connect the transfer bonding pads and the inner leads.

Abstract: The quality of a non-leaded semiconductor device is to be improved. The semiconductor device comprises a sealing body for sealing a semiconductor chip with resin, a tab disposed in the interior of the sealing body, suspension leads for supporting the tab, plural leads having respective to-be-connected surfaces exposed to outer edge portions of a back surface of the sealing body, and plural wires for connecting pads formed on the semiconductor chip and the leads with each other. End portions of the suspending leads positioned in an outer periphery portion of the sealing body are not exposed to the back surface of the sealing body, but are covered with the sealing body. Therefore, stand-off portions of the suspending leads are not formed in resin molding.

Abstract: A lead frame for a semiconductor package has a flag to which a semiconductor die is mounted. Tie bars are coupled to the flag. There is a first set of leads and each first set lead in the first set of leads has a first set lead parallel length and a first set lead tapered length. The first set lead parallel length of each first set lead has a constant width and edges that are parallel to edges of all other first set lead parallel lengths. A free end region of the first set lead tapered length of each first set lead provides a first set lead bond target region. There is a second set of leads disposed between a first one of the tie bars and the first set of leads. Each second set lead, in the second set of leads, has a second set lead parallel length and a second set lead tapered length.

Abstract: A multichip module defining a dc to dc converter employs a monolithic chip containing at least two III-nitride switches (a monolithic CSC chip) mounted on a conductive lead frame. The CSC chip is copacked with an IC driver for the switches and with the necessary passives. The module defines a buck converter; a boost converter, a buck boost converter, a forward converter and a flyback converter. The drain, source and gate pads of the monolithic CSC chip are connected to a lead frame by solder or epoxy or by bumping attach and a conductive connector or wire bonds connect the switch terminal to lead frame.

Abstract: A surface acoustic wave device comprises a piezoelectric substrate (1), at least one inter-digital transducers (IDT) (2) provided on the piezoelectric substrate, at least one elongated electrode pad (4) electrically connected to the IDT, and at least one stud bump (5) disposed on the electrode pad such that an LC component of the surface acoustic wave device has a predetermined value.