Abstract: A lead frame and a light emitting device package using the same are disclosed. More particularly, a lead frame and a light emitting device package using the lead frame which can be easily manufactured and employ a multi-chip structure. The light emitting device package includes a first frame including a heat sink, a second frame coupled to an upper side of the first frame, the second frame including at least one pair of leads and a mount formed with a hole, and a molded structure for coupling the first and second frames to each other.

Abstract: In accordance with the present invention, there is provided a semiconductor package (e.g., a QFP package) including a uniquely configured leadframe sized and configured to maximize the available number of exposed leads in the semiconductor package. More particularly, the semiconductor package of the present invention includes a generally planar die pad or die paddle defining multiple peripheral edge segments. In addition, the semiconductor package includes a plurality of leads. Some of these leads include exposed bottom surface portions which are provided in at least one row or ring which at least partially circumvents the die pad, with other leads including portions which protrude from respective side surfaces of a package body of the semiconductor package. Connected to the top surface of the die pad is at least one semiconductor die which is electrically connected to at least some of the leads.

Abstract: A chip package having asymmetric molding includes a lead frame, a chip, an adhesive layer, bonding wires and a molding compound. The lead frame includes a turbulent plate and a frame body having inner lead portions and outer lead portions. The turbulent plate is bended downwards to form a concave portion. The first end of the turbulent plate is connected to the frame body, and the second end is lower than the inner lead portions. The chip is fixed under the inner lead portions through the adhesive layer. The bonding wires are connected between the chip and the inner lead portions. The molding compound encapsulates the chip, the bonding wires, and the turbulent plate. The ratio between the thickness of the molding compound over and under the concave portion is larger than 1. The thickness of the molding compound under and over the outer lead portions is not equal.

Abstract: Semiconductor die packages and methods of making them are disclosed. An exemplary package comprises a leadframe having a source lead and a gate lead, and a semiconductor die coupled to the source and gate leads at a first surface of the leadframe. The source lead has a protruding region at a second surface of the leadframe. A molding material is disposed around the semiconductor die, the gate lead, and the source lead such that a surface of the die and a surface of the protruding region are left exposed by the molding material. An exemplary method comprises obtaining the semiconductor die and leadframe, and forming a molding material around at least a portion of the leadframe and die such that a surface of the protruding region is exposed through the molding material.

Abstract: A semiconductor device comprises a die having a first surface and a second surface, a first leadframe connected to the first surface and the second surface, and a second leadframe connected to the first surface.

Abstract: An integrated circuit package system is provided including forming a paddle, an outer lead, and an inner lead between the paddle and the outer lead; forming a non-vertical paddle edge of the paddle and a non-vertical lead edge of the inner lead facing the non-vertical paddle edge; and encapsulating an integrated circuit die over the paddle.

Abstract: The present invention is a method of manufacturing a semiconductor device, by forming a wiring on or above a wafer so that the wiring is electrically connected to a first electrode disposed on a first surface of the wafer, forming a first resin layer on or above the wafer such that the wiring is disposed between the wafer and the first resin layer, forming an opening in the first resin layer such that the opening overlaps the wiring, forming a conductive member in the opening such that the conductive member being electrically connected to the wiring, forming a second electrode on the conductive member such that the second electrode is electrically connected to the wiring via the conductive member, and separating the wafer into individual elements after the forming of the first resin layer.

Abstract: The present invention provides an integrated circuit and the method of implementing the same. The integrated circuit includes a die, a base, a covering material and a plurality of pins. The die has at least a first function and a second function and includes a plurality of signal pads and at least a switching pad. The die receives and outputs signals through the signal pads, and the switching pad is utilized to switch the functions of the die. The base is utilized to support the die, and the covering material is utilized to cover the die and the base. One terminal of each pin is inside the covering material and coupled to the corresponding signal pad, and the other terminal of each pin is outside the covering material. The signal pads are connected to the circuits outside the integrate circuit through the pins.

Abstract: A semiconductor package includes a lead frame, at least one chip, and an encapsulation. The lead frame has a plurality of leads, and each of the leads includes at least one first conductive part, at least one second conductive part, and at least one third conductive part. The first conductive part is not electrically connected to the second conductive part, and the second conductive part is electrically connected to the third conductive part. The chip is electrically connected to the first conductive part. The encapsulation encapsulates the chip and at least a portion of the lead frame, and forms a first surface and a second surface opposite to the first surface. The first conductive part and the third conductive part are exposed from the first surface, and the second conductive part is exposed from the second surface.

Abstract: Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

Abstract: The present invention provides microelectronic component assemblies and lead frame structures that may be useful in such assemblies. For example, one such lead frame structure may include a set of leads extending in a first direction and a dam bar. Each of the leads may have an outer length and an outer edge. The dam bar may include a plurality of dam bar elements, with each dam bar element being joined to the outer lengths of two adjacent leads. In this example, each dam bar element has an outer edge that extends farther outwardly than the outer edges of the two adjacent leads. The outer edges of the leads and the outer edges of the dam bar elements together define an irregular outer edge of the dam bar. Other lead frame structures and various microelectronic component assemblies are also shown and described.

Abstract: A semiconductor device comprising a leadframe (903), which has first (903a) and second (903b) surfaces, a planar pad (910) of a certain size, and a plurality of non-coplanar members (913) adjoining the pad. The device further has a heat spreader (920) with first (920a) and second (920b) surfaces, a planar pad of a size matching the leadframe pad size, and contours (922), into which the leadframe members are inserted so that the first spreader pad surface touches the second leadframe pad surface across the pad size. A semiconductor chip (904) is mounted on the first leadframe pad surface. Encapsulation material (930), preferably molding compound, covers the chip, but leaves the second spreader surface uncovered.

Abstract: A leadframe-based semiconductor package and a leadframe for the package are revealed. The semiconductor package primarily includes parts of the leadframe including one or more first leads, one or more second leads, and a supporting bar disposed between the first leads and the second leads and further includes a chip attached to the first leads, the second leads and the supporting bar, a plurality of bonding wires and an encapsulant. The supporting bar has an extended portion projecting from the first bonding finger and the second bonding finger and connected to a non-lead side of the encapsulant wherein the extended portion has an arched bend to absorb the pulling stresses and to block stress transmission. Cracks caused by delamination of the supporting bar will not be created during trimming the supporting bar along the non-lead side of the encapsulant. Moisture penetration along the cracks of the supporting bar to the die-bonding plane under the chip is desirably prevented.

Abstract: The present invention provides a chip-stacked package structure with leadframe having multi-piece bus bar, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, wherein the die pad is provided between the plurality of inner leads arranged in rows facing each other and is vertically distant from the plurality of inner leads; a chip-stacked structure formed with a plurality of chips stacked together and provided on the die pad, the plurality of chips and the plurality of inner leads arranged in rows facing each other being electrically connected with each other; and an encapsulant provided to cover the chip-stacked structure and the leadframe; wherein the leadframe comprises at least a bus bar provided between the plurality of inner leads arranged in rows facing each other and the die pad, the bus bar being formed by multiple pieces.

Abstract: The present invention provides a method of making a stackable power semiconductor package system comprising forming a lower lead frame, having an upward bent source lead and an upward bent gate lead, mounting a power semiconductor device on the lower lead frame utilizing interconnect structures and forming an upper lead frame wherein the upper lead frame is on the power semiconductor device.

Abstract: A chip package having asymmetric molding includes a lead frame, a chip, an adhesive layer, bonding wires and a molding compound. The lead frame includes a turbulent plate and a frame body having inner lead portions and outer lead portions. The turbulent plate is bended downwards to form a concave portion. The first end of the turbulent plate is connected to the frame body, and the second end is lower than the inner lead portions. The chip is fixed under the inner lead portions through the adhesive layer. The bonding wires are connected between the chip and the inner lead portions. The molding compound encapsulates the chip, the bonding wires, and the turbulent plate. The ratio between the thickness of the molding compound over and under the concave portion is larger than 1. The thickness of the molding compound under and over the outer lead portions is not equal.

Abstract: A surface mount semiconductor device using a lead frame can suppress stress applied to a package by a load in a forming process performed for the lead frame projecting from the package at a portion at which the lead frame projects the package. Concave portions can be provided in at least one lead of a pair of leads that project laterally from side faces of the package. The concave portions can be arranged at positions where the leads are bent approximately perpendicularly along the side faces of the package at respective central portions of the leads. Thus, a cross-sectional area of a bending portion of the lead can be reduced, thereby enabling the lead (or leads) to be easily bent with a smaller bending load. Therefore, a surface mount semiconductor device can be achieved which prevents disconnection without impairing a heat radiation property and which has good moisture resistance.

Abstract: The inverter has a plurality of arms for conducting or cutting off a current and each arm has a switching device and a first and a second wiring layer for connecting the switching device. The first and second wiring layers of each arm are respectively formed on insulating substrates, and one face of the switching device is fixed to the first wiring layer, and the second wiring layer and the other face of the switching device are electrically connected by a laminal conductor, and the laminal conductor has a first and a second connection, and the first connection of the laminal conductor is fixed to the other face of the switching device, and the second connection of the laminal conductor is fixed to the second wiring layer. Thereby, a large current of the inverter can be realized and the assembly capacity of the inverter or the vehicle drive unit will be improved.

Abstract: An electronic component includes a vertical semiconductor power transistor and a further semiconductor device arranged on the transistor to form a stack. The first vertical semiconductor power transistor has a semiconductor body having a first side and a second side and device structures, at least one first electrode positioned on the first side and at least one second electrode positioned on the second side. The semiconductor body further has at least one electrically conductive via. The via extends from the first side to the second side of the semiconductor body and is galvanically isolated from the device structures of the semiconductor body and from the first electrode and the second electrode.

Abstract: A semiconductor device includes two or more semiconductor devices with bond pads that are electrically connected to the same, single surface of a plurality of leads. The two or more devices may include substantially centrally located bond pads or substantially identically arranged bond pads.

Abstract: Quad Flat No-Lead (QFN) packages are provided. An embodiment of a QFN package includes a semiconductor chip including an active surface and an inactive surface, a plurality of leads, a plurality of wire bonds configured to couple the plurality of leads to the semiconductor chip, and a mold material including a mounting side and having a perimeter. The active surface is oriented toward the mounting side, the plurality of wire bonds are disposed between the active surface and the mounting side within the mold material, and the plurality of leads are exposed on the mounting side and are at least partially encapsulated within the perimeter of the mold material.

Abstract: A magnetic sensor is constituted using magnetic sensor chips mounted on stages supported by interconnecting members and a frame having leads in a lead frame. Herein, the stages are inclined upon plastic deformation of the interconnecting members. When the frame is held in a metal mold and the stages are pressed, the interconnecting members are elastically deformed, so that the magnetic sensor chips are bonded onto the stages placed substantially in the same plane and are then wired with the leads. Thereafter, the stages are released from pressure, so that the interconnecting members are restored from the elastically deformed states thereof. When the magnetic sensor chips are combined together to realize three sensing directions, it is possible to accurately measure three-dimensional bearings of magnetism, and the magnetic sensor can be reduced in dimensions and manufactured with a reduced cost therefore.

Abstract: By disposing a rear surface of a first island 12 and a top surface of a second island 13 so as to at least partially overlap each other, a first semiconductor chip on the first island and a second semiconductor chip on a rear surface of the second island are configured so as to overlap each other. Accordingly, a planar occupied area can be set smaller than planar areas of both of the chips. Moreover, thin metal wires to be connected to the second semiconductor chip 20 are extended to a back side. Consequently, a thickness of a semiconductor device can also be reduced.

Abstract: A multi-chip package with a single die pad is provided. The multi-chip package includes a leadframe having a die pad and a plurality of leads surrounding the die pad. Each of the leads includes an upper lead, a lower lead and an intermediate lead substantially perpendicularly connected to the upper and lower leads, wherein the upper and lower leads are substantially parallel to the die pad. The upper and lower surfaces of the die pad are attached with upper and lower chips respectively. The upper chip is electrically connected to the upper surface of one part of the upper leads by a plurality of first bonding wires and the lower chip is electrically connected to the lower surfaces of the other part of the upper leads by a plurality of second bonding wires. A sealant is used to encapsulate the chips and bonding wires to protect these elements from damage.

Abstract: A surface mountable multi-chip device is provided which includes first and second lead frames portions and at least two chips. The lead frame portions each include a header region and a lead region. Beneficially, the header regions of the first and second lead frame portions lie in a common plane, with at least one semiconductor chip being placed on each of the header regions. A conductive member link is placed on top of the two chips to electrically and mechanically interconnect the chips.

Abstract: Means for forming a package is disclosed on which is mounted a semiconductor chip with a high-speed LSI formed thereon, using a wire bonding method. The package comprises a semiconductor chip, a die pad smaller than a main surface of the semiconductor chip, a sealing member, plural leads each comprising an outer terminal portion and an inner lead portion, and plural bonding wires for connection between bonding pads formed on the semiconductor chip and the inner lead portions of the leads, each of the inner lead portions being bent in a direction away from a mounting surface of the sealing member, thereby approximating the height of the chip-side bonding pads and that of a bonding position of the inner lead portions to each other, whereby the wire length can be made shorter and it is possible to suppress an increase in inductance of the wire portions and attain impedance matching at various portion of a high-frequency signal input/output transmission path.

Abstract: A chip package with asymmetric molding including a lead frame, a chip, an adhesive layer, bonding wires and an encapsulant, is provided. The lead frame includes a frame body and at least a turbulent plate. The frame body has inner lead portions and outer lead portions. The turbulent plate is bended upwards to form a bulge portion and the first end of the turbulent plate is connected to the frame body. The chip is fixed under the inner lead portions and the turbulent plate is located at one side of the chip. The adhesive layer is disposed between the chip and the inner lead portions, and the bonding wires are electrically connected between the chip and the corresponding inner lead portions, respectively. The encapsulant encapsulates at least the chip, the bonding wires, the inner lead portions, the adhesive layer and the turbulent plate.

Abstract: The present invention is a semiconductor device capable of relieving thermal stress without breaking wire. It comprises a semiconductor chip, a solder ball for external connection, wiring for electrically connecting the semiconductor chip and the solder ball, a stress relieving layer provided on the semiconductor chip, and a stress transmission portion for transmitting stress from the solder ball to the stress relieving layer in a peripheral position of an electrical connection portion of the solder ball and wiring.

Abstract: A light emitting device has a cup portion with a bottom surface opening, and one electrode of a light emitting element is connected to the cup portion. The other electrode of the light emitting element is connected to a lead set up from an inner space to outside the cup portion using the opening of the cup portion. Each electrode and lead of the light emitting device can be electrically connected without bonding wires. This prevents shadows or light unevenness from reflecting the shape of the bonding wire, thereby enhancing light-emission efficiency. As an alternative to setting up the lead from inside to the outside of the cup portion, the lead existing outside the cup portion and the other electrode are electrically connected via the bonding wire through the cup portion's opening. Thus, light outputted outside of the light emitting device is not intercepted by the bonding wire.

Abstract: A wafer or a portion of a wafer including capped chips such as surface acoustic wave (SAW) chips is provided with terminals by applying a terminal-bearing element such as a dielectric element with terminals and leads thereon, or a lead frame, so that the terminal-bearing element covers the caps, and the leads are aligned with channels or other depressions between the caps. The leads are connected to contacts on the wafer, and the wafer is severed to form individual units, each including terminals supported by the cap and connected to the contacts by the leads. The resulting units can be handled and processed in the same manner as ordinary chips or chip assemblies.

Abstract: A plastic package includes a plurality of terminal members each having an outer terminal, an inner terminal, and a connecting part connecting the outer and the inner terminal; a semiconductor device provided with terminal pads connected to the inner terminals with bond wires; and a resin molding sealing the terminal members, the semiconductor device and the bond wires therein. The inner terminals of the terminal members are thinner than the outer terminals and have contact surfaces. The upper, the lower and the outer side surfaces of the outer terminals, and the lower surfaces of the semiconductor device are exposed outside. The inner terminals, the bond wires, the semiconductor device and the resin molding are included in the thickness of the outer terminals.

Abstract: A semiconductor package mainly includes a semiconductor chip and a plurality of leads at the periphery of the semiconductor chip. Each of the leads has a first portion, a second portion and opposing upper and lower surfaces, wherein the second portion of the leads are bent upwards. The semiconductor package has a plurality of bonding wires with one ends connected to the bonding pads of the semiconductor chip and the other ends connected to the first portions of the leads. The semiconductor package is provided with a package body formed over the semiconductor chip and the leads, wherein each of the leads is substantially embedded in the package body with the lower surface thereof exposed from the package body. The present invention further provides a method for manufacturing the semiconductor package.

Abstract: Fabrication of a semiconductor package includes placing a conductive material on a protrusion from a leadframe to form a first assembly, forming a non-conductive mask about the protrusion, and placing a die on the first assembly, the die having an active area. Fabrication can further include reflowing the conductive material to form a second assembly such that a connection extends from the die active area, through the conductive material, to the protrusion. A semiconductor package includes a leadframe having a protrusion, a conductive material reflowed to the protrusion, and a die having an active area coupled to the protrusion by the reflowed solder.

Abstract: Packages for an optical integrated circuit die and a method for making such packages are disclosed. The package includes a die, a die pad, a plurality of lead fingers, and an encapsulating dielectric material. The downward second pad surface of the die pad bearing an integrated circuit is encapsulated by a bottom encapsulating dielectric material. The top encapsulating dielectric material provides the function for protecting the leadframe from severe environment. The top encapsulating dielectric material can be neglected if there is no threat on the integrated circuit die and the leadframe. Multiple of lead fingers are mounted on the printed circuit board. A portion of the printed circuit board is removed in order to provide an optical path for the light beam transmitted from a light source through the transparent bottom encapsulating dielectric material into the integrated circuit die. The method of making a package includes forming a leadframe including a die pad and a plurality of lead fingers.

Abstract: A semiconductor die package. It includes (a) a semiconductor die including a first surface and a second surface, (b) a source lead structure including protruding region having a major surface, the source lead structure being coupled to the first surface, (c) a gate lead structure being coupled to the first surface, and (d) a molding material around the source lead structure and the semiconductor die. The molding material exposes the second surface of the semiconductor die and the major surface of the source lead structure.

Abstract: A surface mounting structure and a packaging method thereof comprises a chip, a first conducting wire and a second conducting wire. The two conducting wires instead of lead frame architecture of the prior art is that the lead frame and a bridge jumper connected with N junction and P junction instead of the two conducting wires. The two conducting wires are drawn out from a bottom of a package, and are pressed and bent to original surface of the surface mounting pins so as to increase space utilization rate. Thereby it is to improve a complicated lead frame architecture of the prior art, increase use space and simplify system design.

Abstract: A semiconductor device comprises a die having a first surface and a second surface, a first leadframe connected to the first surface and the second surface, and a second leadframe connected to the first surface.

Abstract: The present invention is a semiconductor device capable of relieving thermal stress without breaking wire. It comprises a semiconductor chip (12), a solder ball (20) for external connection, wiring (18) for electrically connecting the semiconductor chip (12) and the solder ball (20), a stress relieving layer (16) provided on the semiconductor chip (12), and a stress transmission portion (22) for transmitting stress from the solder ball (20) to the stress relieving layer (16) in a peripheral position of an electrical connection portion (24a) of the solder ball (20) and wiring (18).

Abstract: The present invention provides microelectronic component assemblies and lead frame structures that may be useful in such assemblies. For example, one such lead frame structure may include a set of leads extending in a first direction and a dam bar. Each of the leads may have an outer length and an outer edge. The dam bar may include a plurality of dam bar elements, with each dam bar element being joined to the outer lengths of two adjacent leads. In this example, each dam bar element has an outer edge that extends farther outwardly than the outer edges of the two adjacent leads. The outer edges of the leads and the outer edges of the dam bar elements together define an irregular outer edge of the dam bar. Other lead frame structures and various microelectronic component assemblies are also shown and described.

Abstract: A semiconductor package mainly includes a semiconductor chip and a plurality of L-shaped leads arranged at the periphery of the semiconductor chip. Each of the L-shaped leads has an inner lead portion exposed out of the lower surface of the semiconductor package and an outer lead portion formed substantially parallel to and adjacent to one of the side surfaces of the semiconductor package. The semiconductor chip has a plurality of bonding pads electrically coupled to the inner lead portions of the L-shaped leads. The semiconductor package is provided with a package body formed over the semiconductor chip and the inner lead portions of the L-shaped leads.

Abstract: An integrated circuit chip packaging assembly having a first and second package side. An integrated circuit chip has a substrate side and an active circuit side. The chip includes integrated circuit devices formed on the active circuit side. The active circuit side of the chip is on the first package side. The die pad has at least one runner member extending therefrom, which may be bent toward the first package side. The active circuit side of the chip is attached to the die pad. The die pad is on the first package side relative to the chip. The package mold compound is formed over the die pad, at least part of the chip, and at least part of the runner member(s). At least part of the substrate side of the chip and/or at least part of the runner member(s) may not be covered by the package mold compound.

Abstract: A leadframe includes a die pad, a plurality of tie bars, a plurality of metal extrusions and a plurality of leads. The leads are arranged around the die pad. The tie bars are connected to the corners of the die pad, and the metal extrusions are connected to the sides of the die pad but separated from the tie bars. Each metal extrusion has a locking hole and a bonding surface, which is higher than the die pad. The metal extrusions are configured for improving ground connections by wire-bonding. When a bottom surface of the die pad is exposed from an encapsulant for a semiconductor package, the metal extrusions help to secure the die pad without stress transmission.

Abstract: A semiconductor apparatus includes a semiconductor pellet having electrodes thereon; a plurality of lead terminals, which electrically connect the electrodes of the semiconductor pellet to terminals formed on a substrate; and a molding member, which is filled around the semiconductor pellet and upper parts of the lead terminals. The plurality of lead terminals are shaped to be elongated strips and are arranged to extend out of the molding member toward the substrate.

Abstract: The present invention is a semiconductor device capable of relieving thermal stress without breaking wire. It comprises a semiconductor chip (12), a solder ball (20) for external connection, wiring (18) for electrically connecting the semiconductor chip (12) and the solder ball (20), a stress relieving layer (16) provided on the semiconductor chip (12), and a stress transmission portion (22) for transmitting stress from the solder ball (20) to the stress relieving layer (16) in a peripheral position of an electrical connection portion (24a) of the solder ball (20) and wiring (18).

Abstract: Semiconductor package films and a display module comprising a packaged semiconductor device punched from a semiconductor package film are provided. In one embodiment, the invention provides a semiconductor package film comprising a base film comprising a plurality of semiconductor device regions, an intermediate region disposed on a first surface of the base film and disposed between two semiconductor device regions, and a reinforcing member attached to a second surface of the base film opposite the first surface of the base film and attached opposite the intermediate region. Each semiconductor device region comprises a semiconductor mounting region adapted to receive a semiconductor chip, and first and second metal line regions.

Abstract: A source mounted semiconductor device package is described which includes a semiconductor die having first and second opposing major surfaces, first and second major electrodes disposed on respective major surfaces and a control electrode disposed on the second major surface, and a thin metal clip electrically connected to the first major electrode of the die. The thin metal clip has a relatively large surface area, and package resistance which is caused by skin effect phenomenon is reduced thereby in high frequency applications.

Abstract: A circuit device of the present invention includes a first element which is placed parallel to a first reference plane and which senses a physical quantity, and a second element placed parallel to a second reference plane which intersects the first reference plane at a predetermined angle. The circuit device further includes a sealing resin for integrally sealing the first and second elements, a first conductive pattern which is electrically connected to the first element and placed parallel to the first reference plane and which has a back surface exposed from the sealing resin, and a second conductive pattern which is electrically connected to the second element and placed parallel to the second reference plane and which has a back surface exposed from the sealing resin.

Abstract: A semiconductor package comprising a semiconductor die which has opposed first and second surfaces and at least first and second bond pads disposed on the second surface thereof. In addition to the semiconductor die, the semiconductor package includes at least one lead having opposed first and second surfaces, the first surface of the lead being electrically connected to the first bond pad. Also included in the semiconductor package is at least one conductive post having opposed first and second surfaces, the first surface of the conductive post being electrically connected to the second bond pad. A package body at least partially encapsulates the semiconductor die, the lead, and the conductive post such that the second surface of the lead and the second surface of the conductive post are exposed in a common exterior surface of the package body.

Abstract: The semiconductor device includes a semiconductor body having a first and an opposite second main surface and side faces connecting the main surfaces, a circuit region in the semiconductor body adjacent to the first main surface, having a circuit contact terminal, a metallization region extending from the circuit contact terminal on the first main surface onto a side face of the semiconductor body to provide an exposed contacting region on the side face of the semiconductor body, and an insulation layer arranged between the metallization region and the semiconductor body, the insulation layer having an opening for electrically connecting the circuit contact terminal to the metallization region.

Abstract: A semiconductor device including a semiconductor chip having first and second principal surfaces is disclosed. The semiconductor chip includes a first electrode formed on the first principal surface and a second electrode formed on the second principal surface. A first lead frame includes a first connecting portion connected to the first electrode and a first terminal portion. A second lead frame includes a second connecting portion connected to the second electrode and a second terminal portion. The semiconductor chip is sealed by a housing. The housing is formed so as not to cover part of surfaces of the first and second connecting portions.