Abstract: Embodiments of the present invention are directed to dual threshold voltage (VT) channel devices and their methods of fabrication. In an example, a semiconductor device includes a gate stack disposed on a substrate, the substrate having a first lattice constant. A source region and a drain region are formed on opposite sides of the gate electrode. A channel region is disposed beneath the gate stack and between the source region and the drain region. The source region is disposed in a first recess having a first depth and the drain region disposed in a second recess having a second depth. The first recess is deeper than the second recess. A semiconductor material having a second lattice constant different than the first lattice constant is disposed in the first recess and the second recess.

Abstract: An integrated circuit (IC) device comprises a substrate having a metal-oxide-semiconductor (MOS) region; a gate region disposed over the substrate and in the MOS region; and source/drain features in the MOS region and separated by the gate region. The gate region includes a fin structure and a nanowire over the fin structure. The nanowire extends from the source feature to the drain feature.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: A semiconductor device includes a semiconductor substrate including a barrier region, a channel layer disposed below the barrier region and forming a heterojunction with the barrier region such that a two-dimensional charge carrier gas channel is disposed in the channel layer near the heterojunction, and a sub-channel region disposed below the channel layer, and a first interface in the semiconductor substrate between a first region of type III-V material and a second region of type III-V material that is disposed below the first region of type III-V material, wherein the first and second regions of type III-V material form polarization charges on either side of the first interface, wherein the first interface is within or formed by the sub-channel region, and wherein semiconductor substrate has a vertically varying dopant concentration of deep energy acceptor dopant atoms that is locally increased at the first interface.

Abstract: The present invention discloses an array substrate, a display device, and a method of manufacturing the same. Wherein, the array substrate comprises a substrate; a source electrode layer formed on the substrate; a support layer formed on the source electrode layer; a drain electrode layer formed on the support layer; a barrier layer covering the drain electrode layer; an active layer formed on the barrier layer; the barrier layer isolating the support layer and the active layer. By the above-mentioned structure, the fluorine atoms in the support layer can be prevented from entering the active layer, thereby improving the reliability of the array substrate.

Abstract: The present invention relates to a metal oxide thin-film transistor and manufacturing for the same. The thin-film transistor includes a substrate; a source electrode, a barrier layer and a drain electrode which are sequentially formed on the substrate; and a semiconductor active layer formed on side surfaces of the source electrode and the drain electrode; wherein, the semiconductor active layer is respectively connected with the source electrode and the drain electrode. The metal oxide thin-film transistor has a new structure, wherein the source and drain electrodes are parallel to the substrate, and the semiconductor active layer is contacted with the source electrode and the drain electrode by a vertical covering or a step covering way. The channel length does not depend on the photolithography process, but depends on the side length of the source and drain electrodes contacted with the semiconductor active layer.

Abstract: A semiconductor rectifier device includes a semiconductor substrate of a first conductive type of a wide gap semiconductor; a semiconductor layer of the first conductive type of the wide gap semiconductor formed on an upper surface of the semiconductor substrate, wherein an impurity concentration of the semiconductor layer is between 1E+14 atoms/cm3 and 5E+16 atoms/cm3 inclusive, and a thickness thereof is 8 ?m or more; a first semiconductor region of the first conductive type of the wide gap semiconductor formed at the semiconductor layer surface; a plurality of second semiconductor regions of a second conductive type of the wide gap semiconductor formed as sandwiched by the first semiconductor regions, wherein a width of each of the second semiconductor regions is 15 ?m or more; a first electrode formed on the first and second semiconductor regions; and a second electrode formed on a lower surface of the semiconductor substrate.

Abstract: An area illumination inorganic electro-luminescent device including a substrate; and an array of one or more commonly addressed, light-emitting elements. Each commonly-addressed, light-emitting element includes a first electrode layer formed over the substrate, one or more light-emitting layers formed over the first electrode layer and a second electrode layer formed over the light-emitting layer. The light-emitting layers include multiple core/shell quantum dot emitters formed in a common polycrystalline semiconductor matrix, and a number of different core/shell quantum dot emitters emit light with a spectral power distribution having a peak and a FWHM bandwidth, such that the peak wavelengths differ by an amount less than or equal to the average FWHM bandwidth of the different core/shell quantum dot emitters within the range of 460 to 670 nm.

Abstract: A slit recess channel gate is provided. The slit recess channel gate includes a substrate, a gate dielectric layer, a first conductive layer and a second conductive layer. The substrate has a first trench. The gate dielectric layer is disposed on a surface of the first trench and the first conductive layer is embedded in the first trench. The second conductive layer is disposed on the first conductive layer and aligned with the first conductive layer above the main surface, wherein a bottom surface area of the second conductive layer is substantially smaller than a top surface area of the second conductive layer.

Abstract: A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises: an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.

Abstract: A compound semiconductor device includes a substrate; and a compound semiconductor layer disposed over the substrate, wherein the compound semiconductor layer includes a first region having first conductivity-type carriers generated by activating a first impurity and also includes a second region having carriers at lower concentration as compared to the first region, the carriers being generated by activating a second impurity which is the same type as the first impurity.

Abstract: A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode.

Abstract: A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

Abstract: A method for fabricating metal gate and polysilicon gate FET devices on the same chip is disclosed. The method avoids the use of two separate masks during gate stack fabrication of the differing gates. By using a single mask, tighter NFET to PFET distances can be achieved, and the fabrication process is simplified. After blanket disposing layers for the fabrication of the metal gate stack, a covering protective material layer is formed, again in blanket fashion. A block level mask is used to clear the surface for the gate insulator formation in the poly gate device regions. During oxidation, which forms the gate dielectric for the poly gate devices, the protective material prevents damage of the metal gate device regions. Following oxidation, a single common polysilicon cover is disposed in blanket manner for continuing the fabrication of the gate stacks. The protective material is selected in such a way to be either easily removable upon oxidation, or to be conductive upon oxidation.

Abstract: A method of forming an electronic device includes, forming a first channel coupled to a first current electrode and a second current electrode and forming a second channel coupled to the first current electrode and the second current electrode. The method also includes the second channel being substantially parallel to the first channel within a first plane, wherein the first plane is parallel to a major surface of a substrate over which the first channel lies. A gate electrode is formed surrounding the first channel and the second channel in a second plane, wherein the second plane is perpendicular to the major surface of the substrate. The resulting semiconductor device has a plurality of locations with a plurality of channels at each location. At small dimensions the channels form quantum wires connecting the source and drain.