Abstract: A semiconductor device includes a pillar-shaped silicon layer including a first diffusion layer, a channel region, and a second diffusion layer formed in that order from the silicon substrate side, floating gates respectively disposed in two symmetrical directions so as to sandwich the pillar-shaped silicon layer, and a control gate line disposed in two symmetrical directions other than the two directions so as to sandwich the pillar-shaped silicon layer. A tunnel insulating film is formed between the pillar-shaped silicon layer and each of the floating gates. The control gate line is disposed so as to surround the floating gates and the pillar-shaped silicon layer with an inter-polysilicon insulating film interposed therebetween.

Abstract: A stratified gate dielectric stack includes a first high dielectric constant (high-k) gate dielectric comprising a first high-k dielectric material, a band-gap-disrupting dielectric comprising a dielectric material having a different band gap than the first high-k dielectric material, and a second high-k gate dielectric comprising a second high-k dielectric material. The band-gap-disrupting dielectric includes at least one contiguous atomic layer of the dielectric material. Thus, the stratified gate dielectric stack includes a first atomic interface between the first high-k gate dielectric and the band-gap-disrupting dielectric, and a second atomic interface between the second high-k gate dielectric and the band-gap-disrupting dielectric that is spaced from the first atomic interface by at least one continuous atomic layer of the dielectric material of the band-gap-disrupting dielectric.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device. The method also includes forming a step-forming-hard-mask (SFHM) on the MG stack in a predetermined area on the semiconductor substrate, performing MG recessing, depositing a MG hard mask over the semiconductor substrate and recessing the MG hard mask to fully remove the MG hard mask from the MG stack in the predetermined area.

Abstract: A method of manufacturing a semiconductor device, and the method includes forming a stack of a work function layer, a blocking structure, and a metal cap layer sequentially on a substrate. The forming of the blocking structure includes sequentially depositing at least a metal diffusion prevention layer over the work function layer and an electrical performance enhancement layer over the metal diffusion prevention layer before forming the metal cap layer. The electrical performance enhancement layer includes a TiN layer having a Ti/N ratio greater than 1.

Abstract: In a semiconductor device, a thin wall oxide film formed over sidewalls of an active region is formed, and a portion of the wall oxide film adjacent to a gate region is removed. A gate insulating film is formed where the portion of wall oxide film was removed to prevent a parasitic transistor from being generated by the wall oxide film.

Abstract: Vertically stacked Field Effect Transistors (FETs) are created where a first FET and a second FET are controllable independently. The vertically stacked FETs may be connected in series or in parallel, thereby suitable for use as a portion of a NAND circuit or a NOR circuit. Epitaxial growth over a source and drain of a first FET, and having similar doping to the source and drain of the first FET provide a source and drain of a second FET. An additional epitaxial growth of a type opposite the doping of the source and drain of the first FET provides a body for the second FET.

Abstract: A semiconductor device includes a trench defined by etching a semiconductor substrate including a device isolation film and an active region, an active region protruded from a side and bottom of the trench, and a gate electrode surrounding the active region simultaneously while being buried in the trench.

Abstract: A process for producing a conducting electrode on a substrate, including: depositing a layer made of a dielectric; depositing a protective layer made of the nitride of a metal on the dielectric layer; depositing a functionalization layer made of a material including a chemical species, such that the free enthalpy of formation of the nitride of the species is less, in absolute value, than the free enthalpy of formation of the nitride of the metal of the protective layer over the temperature range between 0° C. and 1200° C.; and annealing the assembly including the protective layer and the funtionalization layer so that the species diffuse from the functionalization layer into the protective layer and the nitrogen atoms migrate from the protective layer into the functionalization layer.

Abstract: Current drive efficiency is deteriorated in the conventional FET. The FET 20 includes an electrode film 24a provided over the semiconductor substrate 10 and a stressor film 24b that is provided on the electrode film 24a and constitutes a gate electrode 24 together with the electrode film 24a. Each of the electrode film 24a and the stressor film 24b is composed of a metal, a metallic nitride or a metallic silicide. The stressor film 24b is capable of exhibiting a compressive stress over the semiconductor substrate 10.

Abstract: A semiconductor device includes a blocking structure between a metal layer and at least one underlying layer. The blocking structure has a first layer configured for preventing diffusion of metal from the metal layer into the at least one underlying layer, and a second layer configured for enhancing electrical performance of the semiconductor device.

Abstract: An integrated circuit fabrication is disclosed, and more particularly a field effect transistor with a low resistance metal gate electrode is disclosed. An exemplary structure for a metal gate electrode of a field effect transistor comprises a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, wherein each of the sidewall portions has a first width; and an upper portion formed of a second metal material, wherein the upper portion has a protrusion and a bulk portion, wherein the bulk portion has a second width, wherein the protrusion extends into the recess, wherein a ratio of the second width to the first width is from about 5 to 10.

Abstract: An array substrate includes scan lines and data lines defining pixel structures. Each pixel structure includes a first TFT, a second TFT and a pixel electrode. The first TFT includes a first gate connected to the scan line, a first source disposed above and partially overlapping the first gate, and a first drain disposed above the first gate. An end of the first source is connected to the data line. The first drain has at least one first concavity in which the first source is disposed partially. The second TFT includes a second gate connected to the scan line, a second source disposed above the second gate and connected to the first drain, and a second drain disposed above and partially overlapping the second gate. The second source has at least one second concavity in which the second drain is disposed partially. The pixel electrode connects to the second drain.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate and a transistor formed in the substrate. The transistor includes a gate stack having a high-k dielectric and metal gate, a sealing layer formed on sidewalls of the gate stack, the sealing layer having an inner edge and an outer edge, the inner edge interfacing with the sidewall of the gate stack, a spacer formed on the outer edge of the sealing layer, and a source/drain region formed on each side of the gate stack, the source/drain region including a lightly doped source/drain (LDD) region that is aligned with the outer edge of the sealing layer.

Abstract: Methods of forming a semiconductor device include forming an insulation layer on a semiconductor structure, forming an opening in the insulation layer, the opening having a sidewall defined by one side of the insulation layer, forming a first metal layer in the opening, at least partially exposing the sidewall of the opening by performing a wet-etching process on the first metal layer, and selectively forming a second metal layer on the etched first metal layer. An average grain size of the first metal layer is smaller than an average grain size of the second metal layer. Related semiconductor devices are also disclosed.

Abstract: A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.

Abstract: A semiconductor device includes a semiconductor substrate and a transistor formed in the substrate, the transistor having a gate stack that has an interfacial layer formed on the substrate, a high-k dielectric layer formed over the interfacial layer, a metal layer formed over the high-dielectric layer, a capping layer formed between the interfacial layer and high-k dielectric layer; and a doped layer formed on the metal layer, the doped layer including at least F.

Abstract: A non-volatile semiconductor storage device 10 has a plurality of memory strings 100 with a plurality of electrically rewritable memory transistors MTr1-MTr4 connected in series. The memory string 100 includes a columnar semiconductor CLmn extending in a direction perpendicular to a substrate, a plurality of charge accumulation layers formed around the columnar semiconductor CLmn via insulating films, and selection gate lines on the drain side SGD contacting the columnar semiconductor to configure transistors. The selection gate lines on the drain side SGD have lower selection gate lines on the drain side SGDd, each of which is arranged with an interval with a certain pitch, and upper selection gate lines on the drain side SGDu located on a higher layer than the lower selection gate lines on the drain side SGDd, each of which is arranged on gaps between the lower selection gate lines on the drain side SGDd.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate and a transistor formed in the substrate. The transistor includes a gate stack having a high-k dielectric and metal gate, a sealing layer formed on sidewalls of the gate stack, the sealing layer having an inner edge and an outer edge, the inner edge interfacing with the sidewall of the gate stack, a spacer formed on the outer edge of the sealing layer, and a source/drain region formed on each side of the gate stack, the source/drain region including a lightly doped source/drain (LDD) region that is aligned with the outer edge of the sealing layer.

Abstract: A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.

Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.

Abstract: A semiconductor device includes: a semiconductor layer formed on a semiconductor substrate by performing epitaxial growth; a first buried insulating layer which is buried in the first region under the semiconductor layer; and a second buried insulating layer which is buried in the second region under the semiconductor layer in the position lower than the first buried insulating layer.

Abstract: An integrated circuit device includes an integrated circuit substrate and a first gate pattern on the substrate. A non-conductive barrier layer pattern is on the first gate pattern. The barrier layer pattern has openings at selected locations therein extending to the first gate pattern. A second gate pattern is on the barrier layer pattern and extends into the opening in the barrier layer pattern to electrically connect the second gate pattern to the first gate pattern.

Abstract: Basic logic gates are formed in a small area, and a highly integrated and microscopic structure is provided. In an nMOSFET and a pMOSFET, gate electrodes are formed facing each other and sandwiching a semiconductor region via gate insulting layers. Respective drain regions of the nMOSFET and the pMOSFET are connected to each other. A high potential is applied to a source region of the pMOSFET while an intermediate potential between the high and a low potential is applied to a source region of the nMOSFET. As a result, a NAND gate is provided. The intermediate potential between the high and the low potential is applied to the source region of the pMOSFET. The low potential is applied to the source region of the nMOSFET. As a result, a NOR gate is provided.

Abstract: Disclosed are methods and devices for targeting CD of selected transistors in a semiconductor device. Varying CD is done by forming hard mask lines in a hard mask layer that have varying amounts of spacer material associated therewith. Hard mask lines corresponding to selected transistors are either left covered or uncovered by a resist applied over the hard mask layer. Then, spacer material is selectively removed from the hard mask lines to vary the width of hard mask lines and associated side wall spacers. A gate layer is then etched through the spaces in the hard mask lines to form gate lines having varying widths and targeted CD.

Abstract: A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.

Abstract: Methods for fabricating flash memory devices are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises forming a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack. A first impurity doped region is formed within the substrate underlying the trench.

Abstract: Semiconductor devices whose current characteristics can be prevented from varying even if a phase shift mask is used for patterning gate electrodes of MISFETs, and a manufacturing method thereof are disclosed. According to one aspect of the present invention, there is provided a semiconductor device comprising a first transistor including a first gate electrode provided above a semiconductor substrate, and a first source and a first drain provided in the semiconductor substrate, a second transistor arranged to be adjacent to the first transistor, and including a second gate electrode provided above the semiconductor substrate in parallel with the first gate electrode, and a second source and a second drain provided in the semiconductor substrate, and a third gate electrode provided between the first transistor and the second transistor and in parallel with the first and second gate electrodes.

Abstract: Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.

Abstract: An object of the present invention is to realize a numerical aperture higher than that of a pixel having a conventional construction by using a pixel circuit having a novel construction in an electro-optical device. Therefore, it is utilized that the electric potential of a gate signal line in a row except for an i-th row is set to a constant electric potential in a period except for when a gate signal line (106) in the i-th row is selected. A gate signal line 111 in an (i?1)-th row is also used as an electric current supply line for an EL element (103) controlled by the gate signal line (106) in the i-th row. Thus, wiring number is reduced and high numerical aperture is realized.

Abstract: A semiconductor device includes a substrate including a semiconductor layer at a surface, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film. The gate electrode includes a conductive layer consisting of a nitride of a predetermined metal in contact with the gate insulating film. The conductive layer is formed by stacking a first film consisting of a nitride of the predetermined metal and a second film consisting of the predetermined metal, and diffusing nitrogen from the first film to the second film by solid-phase diffusion.

Abstract: A nitrided region is formed on a surface of a polysilicon layer by a nitriding treatment wherein plasma of a processing gas is generated by introducing microwaves into a processing chamber by a planar antenna having a plurality of slots. Then, a CVD oxide film or the like is formed on the nitrided region and after patterning the polysilicon layer and the like after the prescribed shape, and then, a thermal oxide film is formed by thermal oxidation on exposed side walls and the like of the polysilicon layer by having the nitrided region as an oxidation barrier layer. Thus, generation of bird's beak can be suppressed in the process at a temperature lower than the temperature in a conventional process.

Abstract: Disclosed is a tri-gate field effect transistor with a back gate and the associated methods of forming the transistor. Specifically, a back gate is incorporated into a lower portion of a fin. A tri-gate structure is formed on the fin and is electrically isolated from the back gate. The back gate can be used to control the threshold voltage of the FET. In one embodiment the back gate extends to an n-well in a p-type silicon substrate. A contact to the n-well allows electrical voltage to be applied to the back gate. A diode created between the n-well and p-substrate isolates the current flowing through the n-well from other devices on the substrate so that the back gate can be independently biased. In another embodiment the back gate extends to n-type polysilicon layer on an insulator layer on a p-type silicon substrate. A contact to the n-type polysilicon layer allows electrical voltage to be applied to the back gate.

Abstract: A method for making dual pre-doped gate stacks used in semiconductor applications such as complementary metal oxide semiconductor (CMOS) devices and metal oxide semiconductor field effect transistors (MOSFETs) is provided. The method involves providing at least one pre-doped conductive layer, such as poly silicon (poly-Si), on a gate stack and etching by exposing the conductive layer to an etching composition comprising at least one carbon containing gas. The carbon containing gas can be selected from gases having the general formula CxHy, such as, for example, CH4, C2H2, C2H4, and C2H6. The carbon containing gas can further be selected from gases having the general formula CxHyA, wherein A can represent one or more additional substituents selected from O, N, P, S, F, Cl, Br, and I. The processes can result in dual pre-doped gate stacks having essentially vertical sidewalls and further having a width of at least about 3 nm, such as from about 5 nm to about 150 nm.

Abstract: A double gate transistor comprises a substrate (105, 905) and first and second electrically insulating layers (110, 910), (120, 920). The first and second electrically insulating layers form a fin (130, 930). A first gate dielectric (140,940) is at a first side (131, 931) of the fin and a second gate dielectric (150, 950) is at a second side (132, 932) of the fin. A first metal region (160, 960) is adjacent to the first gate dielectric and has a first surface (161, 961), and a second metal region (170, 970) is adjacent to the second gate dielectric and has a second surface (171, 971). The first electrically insulating layer has a third surface (111, 911), the second electrically insulating layer has a fourth surface (121, 921), and the first surface and the second surface lie between the third and fourth surfaces.

Abstract: An integrated circuit having composite gate structures and a method of forming the same are provided. The integrated circuit includes a first MOS device, a second MOS device and a third MOS device. The gate stack of the first MOS device includes a high-k gate dielectric and a first metal gate on the high-k gate dielectric. The gate stack of the second MOS device includes a second metal gate on a high-k gate dielectric. The first metal gate and the second metal gate have different work functions. The gate stack of the third MOS device includes a silicon gate over a gate dielectric. The silicon gate is preferably formed over the gate stacks of the first MOS device and the second MOS device.

Abstract: Methods and apparatus are provided for semiconductor devices. The apparatus comprises a substrate having therein a source region and a drain region separated by a channel region extending to a first surface of the substrate, and a multilayered gate structure located above the channel region. The gate structure comprises, a gate dielectric, preferably of an oxide of Hf, Zr or HfZr substantially in contact with the channel region, a first conductor layer of, for example an oxide of MoSi overlying the gate dielectric, a second conductor layer of, e.g., poly-Si, overlying the first conductor layer and adapted to apply an electrical field to the channel region, and an impurity migration inhibiting layer (e.g., MoSi) located above or below the first conductor layer and adapted to inhibit migration of a mobile impurity, such as oxygen for example, toward the substrate.

Abstract: Example embodiments relate to a multilayer gate electrode, a semiconductor device having the same and methods of fabricating the same. Other example embodiments relate to a semiconductor device with a multilayer gate electrode which is relatively stable at higher temperatures, has improved resistance characteristics and improved reliability, and methods of fabricating the same. The multilayer gate electrode may include a polycrystalline semiconductor layer on the gate insulating layer and doped with conductive type impurities, an ohmic contact layer on the polycrystalline semiconductor layer and including tungsten (W1?x) and non-tungsten metal (Mx, x=about 0.01 to about 0.55), a metal barrier layer on the ohmic contact layer and a refractory metal layer on the metal barrier layer.

Abstract: In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.

Abstract: A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer and a sacrificial structure that comprises a first layer and a second layer, such that the second layer is formed on the first layer and is wider than the first layer. After the sacrificial structure is removed to generate a trench, a metal gate electrode is formed within the trench.

Abstract: A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.

Abstract: A gate electrode with a double diffusion barrier and a fabrication method of a semiconductor device including the same are provided. The gate electrode of a semiconductor device includes: a silicon electrode; a double diffusion barrier formed on the silicon electrode and including at least a crystalline tungsten nitride-based layer; and a metal electrode formed on the double diffusion barrier.

Abstract: Raised structures comprising overlying silicon layers formed by controlled selective epitaxial growth, and methods for forming such raised-structure on a semiconductor substrate are provided. The structures are formed by selectively growing an initial epitaxial layer of monocrystalline silicon on the surface of a semiconductive substrate, and forming a thin film of insulative material over the epitaxial layer. A portion of the insulative layer is removed to expose the top surface of the epitaxial layer, with the insulative material remaining along the sidewalls as spacers to prevent lateral growth. A second epitaxial layer is selectively grown on the exposed surface of the initial epitaxially grown crystal layer, and a thin insulative film is deposited over the second epitaxial layer.