Abstract: According to a method herein, a first side of a substrate is implanted with a first material to change a crystalline structure of the first side of the substrate from a first crystalline state to a second crystalline state, after the first material is implanted. A second material is deposited on the first side of the substrate, after the first material is implanted. A first side of an insulator layer is bonded to the second material on the first side of the substrate. Integrated circuit devices are formed on a second side of the insulator layer, opposite the first side of the insulator layer, after the insulator layer is bonded to the second material. The integrated circuit devices are thermally annealed. The first material maintains the second crystalline state of the first side of the substrate during the annealing.

Abstract: A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing signal to distinct regions of the silicon layer of the SOI. The conductor is recessed into the insulator layer to provide a substantially planar interface with the silicon layer. The conductor is connected to a bias voltage source. In an embodiment, a plurality of conductor is provided that respectively connected to a plurality of voltage sources. Thus, different regions of the silicon layer are biased by different bias signals.

Abstract: A thin film transistor array panel and a manufacturing method therefor. A shorting bar for connecting a thin film transistor with data lines is formed separate from the data lines, and then the data lines and the shorting bar are connected through a connecting member. As a result, all the data lines are floated during manufacture, so that variation in etching speed between data lines does not occur. Since variation in etching speed between the data lines can be prevented, performance deterioration of the transistor caused by a thickness difference in the lower layer of the data line can be prevented, as can resulting deterioration in display quality. Also, the influence of static electricity can be reduced or eliminated. Furthermore, since the data lines and the shorting bar are connected to each other, the generation of static electricity can be prevented or reduced, and quality testing is more readily performed.

Abstract: Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods.

Abstract: An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.

Abstract: A semiconductor device and method of manufacturing the device is disclosed. In one aspect, the device includes a semiconductor substrate and a GaN-type layer stack on top of the semiconductor substrate. The GaN-type layer stack has at least one buffer layer, a first active layer and a second active layer. Active device regions are definable at an interface of the first and second active layer. The semiconductor substrate is present on an insulating layer and is patterned to define trenches according to a predefined pattern, which includes at least one trench underlying the active device region. The trenches extend from the insulating layer into at least one buffer layer of the GaN-type layer stack and are overgrown within the at least one buffer layer, so as to obtain that the first and the second active layer are continuous at least within the active device regions.

Abstract: Trench-generated transistor structures, design structures for a trench-generated transistor, and other trench-generated device structures. The source and drain of the transistor are defined by doped regions in the semiconductor material of the handle substrate of a semiconductor-on-insulator (SOI) wafer. The gate electrode may be defined from the semiconductor layer of the SOI wafer, which is separated from the handle wafer by an insulating layer. Alternatively, the gate electrode may be defined as a conventional gate stack on a shallow trench isolation region in the semiconductor layer or as a conventional gate stack in one of the BEOL interconnect levels.

Abstract: A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing signal to distinct regions of the silicon layer of the SOI. The conductor is recessed into the insulator layer to provide a substantially planar interface with the silicon layer. The conductor is connected to a bias voltage source. In an embodiment, a plurality of conductor is provided that respectively connected to a plurality of voltage sources. Thus, different regions of the silicon layer are biased by different bias signals.

Abstract: Methods and structures for improving substrate loss and linearity in SOI substrates. The methods include forming damaged crystal structure regions under the buried oxide layer of SOI substrates and the structures included damaged crystal structure regions under the buried oxide layer of the SOI substrate.

Abstract: According to one embodiment of the present invention, a SOI device includes a first composite structure including a substrate layer, a substrate isolation layer being disposed on or above the substrate layer, a buried layer being disposed on or above the substrate isolation layer, and a semiconductor layer being disposed on or above the buried layer; a trench structure being formed within the first composite structure; and a second composite structure provided on the side walls of the trench structure, wherein the second composite structure includes a first isolation layer covering the part of the side walls formed by the semiconductor layer and formed by an upper part of the buried layer; and a contact layer covering the isolation layer and the part of the side walls formed by a lower part of the buried layer.

Abstract: A semiconductor device, includes: a semiconductor layer, arranged, via an insulation layer, on a region of a part of a semiconductor substrate; a first circuit block formed on the semiconductor layer; and a second and a third circuit blocks formed on the semiconductor substrate, isolated from each other by the first circuit block.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor structure having a silicon-on-insulator (SOI) substrate and a dielectric region is disclosed. The dielectric region is adjacent to the active layer of the SOI substrate and the dielectric region includes a portion of a buried oxide (BOX) layer of the SOI substrate. At least a portion of the dielectric region extends from a surface of the active layer of the SOI substrate to a depth of at least about three microns or greater below the surface of the active layer. Other embodiments are described and claimed.

Abstract: Methods which include providing a single crystal silicon substrate having a device pattern formed on a portion of the substrate where the device pattern has a protrusion, forming a protection layer on a portion of the protrusion, and forming an oxide insulation layer between the protrusion and the substrate using a thermal oxidation process; methods of forming a partial SOI structure which include providing a single crystal silicon substrate having a device pattern formed thereon where the device pattern comprises a non-SOI region and an SOI region having a protrusion, forming a protection layer on a portion of the protrusion, and forming an oxide insulation layer between the protrusion and the substrate using a thermal oxidation process; structures formed by such methods; and partial silicon-on-insulator structures comprising a single crystal silicon substrate having an device pattern disposed on a surface thereof where the device pattern includes a non-SOI region and an SOI region having a protrusion, and a

Abstract: Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.

Abstract: Integrated circuit devices include a semiconductor substrate and a flux line generating passive electronic element on the semiconductor substrate. A dummy gate structure is arranged on the semiconductor substrate in a region below the passive electronic element. The dummy gate includes a plurality of segments, each segment including a first longitudinally extending part and a second longitudinally extending part. The second longitudinally extending part extends at an angle from an end of the first longitudinally extending part. Ones of the segments extend at a substantially same angle and are arranged displaced from each other in an adjacent nested relationship.

Abstract: A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may include a performance sensitive logic device and the second device may include a yield sensitive memory device.

Abstract: Dynamic random access memory (DRAM) devices including an insulating layer on a semiconductor substrate; a silicon layer on the insulating layer; an active region in the silicon layer; and a unit cell of a transistor on the active region are provided. The DRAM device does not include a capacitor.

Abstract: The present invention is related to semiconductor device and method for manufacturing the same. In accordance with the semiconductor device and method for manufacturing the same, at least one opening extending between LDD regions and exposing a buried insulating layer is formed so that a gate electrode surrounds the surface of a channel region. This structure allows the formation of a relatively a thick channel region and decreases the sensitivity of characteristics of the device dependent upon the thickness of the channel region.

Abstract: A semiconductor layer structure includes a donor substrate and a detach region carried by the donor substrate. A device structure is carried by the donor substrate and positioned proximate to the detach region. The device structure includes a stack of crystalline semiconductor layers. The stack of crystalline semiconductor layers includes a pn junction.

Abstract: There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

Abstract: Integrated circuit devices include a semiconductor substrate and a flux line generating passive electronic element on the semiconductor substrate. A dummy gate structure is arranged on the semiconductor substrate in a region below the passive electronic element. The dummy gate includes a plurality of segments, each segment including a first longitudinally extending part and a second longitudinally extending part. The second longitudinally extending part extends at an angle from an end of the first longitudinally extending part. Ones of the segments extend at a substantially same angle and are arranged displaced from each other in an adjacent nested relationship.

Abstract: Methods and materials for silicon on insulator wafer production in which the doping concentration in a handle wafer is sufficiently high to inhibit dopant from diffusing from the bond wafer during or after bonding to the handle wafer.

Abstract: An infrared solid-state image pickup apparatus includes an SOI substrate having a silicon oxide film layer and an SOI layer on a silicon substrate, a detecting portion which is provided with a PN junction diode formed on the SOI substrate and converts a temperature change generated by an incident infrared ray to an electric signal, and a support that holds the detecting portion with a space from the silicon substrate of the SOI substrate. An impurity in a semiconductor layer constituting the PN junction diode is distributed such that carriers flowing in the semiconductor layer are distributed in such an uneven manner as being much in a central portion of the semiconductor layer than in a peripheral portion thereof.

Abstract: A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second semiconductor substrates. A first insulating layer is formed on the first substrate with a first predetermined stress and a second insulating layer is formed on the second substrate with a second predetermined stress different than the first predetermined stress. The first insulating layer is bonded to the second insulating layer to form a composite insulating layer bonding the first substrate to the second substrate and a portion of the one substrate is removed to form a thin crystalline active layer on the composite insulating layer. The first and second insulating layers are formed with different stresses to provide a desired composite stress, which can be any stress from compressive to unstressed to tensile, depending upon the desired application.

Abstract: An active region and an opposite conductivity active region are formed in a semiconductor substrate. The opposite conductivity active region is covered with a resist pattern. Impurities are implanted into a surface layer of the active region. An angle ?0 is defined as a tilt angle obtained by tilting a virtual plane perpendicular to the substrate and including an edge of the active region, toward the resist pattern by using as a fulcrum a point on the substrate nearest to the resist pattern, until the virtual plane contacts the resist pattern. The ion implantation is performed in a direction having a tilt angle larger than ?0 and allowing ions passed through the uppermost edge of the resist pattern to be incident upon an area between the resist pattern and the active region, and is not performed along a direction allowing the ions to be incident upon the active region.

Abstract: A non-volatile semiconductor memory including a plurality of memory cell transistors, each of the plurality of memory cell transistors includes: a source region having a first conductivity type and in contact with a buried insulating layer on a supporting substrate; a drain region having the first conductivity type and in contact with the buried insulating layer; and a channel region having the first conductivity type and provided between the source region and the drain region so as to contact the buried insulating layer, wherein a thickness of the channel region is more than one nm and not more than a value obtained by adding seven nm to a half value of a gate length of the memory cell transistor.

Abstract: An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with pockets of buried insulator strata and FETs formed on the strata are SOI FETs. The SOI FETs may include Partially Depleted SOI (PD-SOI) FETs and Fully Depleted SOI (FD-SOI) FETs and the chip may include bulk FETs as well. The FETs are formed by contouring the surface of a wafer, conformally implanting oxygen to a uniform depth, and planarizing to remove the Buried OXide (BOX) in bulk FET regions.

Abstract: A semiconductor device which has a substrate formed as a rigid body, includes stress relaxation layers formed by filling in concave portions defined in a first main surface of the substrate, and a device forming layer which covers part of the first main surface and is formed in the substrate. The substrate is made up of a material larger than the stress relaxation layers and the device forming layer in thermal expansion coefficient. Side faces of the device forming layer are electrically connected to their corresponding upper surfaces of the stress relaxation layers in an electrically non-conducting state via insulative stress transfer layers formed on the upper surfaces.

Abstract: A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.

Abstract: There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.

Abstract: A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the second insulating layer; a first gate electrode that is formed on the second semiconductor layer; first conductive-source and drain layers that are formed in the second semiconductor layer and are arranged at sides of the gate electrode; and a first wiring layer that connects the first gate electrode to the first semiconductor layer.

Abstract: A thin film transistor substrate is provided whose structure allows for the formation of (i) a thick gate insulating film, (ii) a high pressure resistance TFT having a LDD region of a GOLD structure, and (iii) a low voltage TFT having a thin gate insulating film, with less number of production steps.

Abstract: A partial isolation insulating film provided between MOS transistors in an NMOS region and a PMOS region, respectively, has a structure in which a portion protruding upward from a main surface of an SOI layer is of greater thickness than a trench depth, namely, a portion (isolation portion) extending below the surface of the SOI layer, and the SOI layer under the partial isolation insulating film is of greater thickness than the isolation portion.

Abstract: Methods which include providing a single crystal silicon substrate having a device pattern formed on a portion of the substrate where the device pattern has a protrusion, forming a protection layer on a portion of the protrusion, and forming an oxide insulation layer between the protrusion and the substrate using a thermal oxidation process; methods of forming a partial SOI structure which include providing a single crystal silicon substrate having a device pattern formed thereon where the device pattern comprises a non-SOI region and an SOI region having a protrusion, forming a protection layer on a portion of the protrusion, and forming an oxide insulation layer between the protrusion and the substrate using a thermal oxidation process; structures formed by such methods; and partial silicon-on-insulator structures comprising a single crystal silicon substrate having an device pattern disposed on a surface thereof where the device pattern includes a non-SOI region and an SOI region having a protrusion, and a

Abstract: A method for engineering stress in the channels of MOS transistors of different conductivity using highly stressed nitride films in combination with selective semiconductor-on-insulator (SOI) device architecture is described. A method of using compressive and tensile nitride films in the shallow trench isolation (STI) process is described. High values of stress are achieved when the method is applied to a selective SOI architecture.

Abstract: A transistor region is a region where a plurality of MOS transistors, including an MOS transistor, are formed, and a dummy region is a region lying under a spiral inductor. In the dummy region, a plurality of dummy active layers are disposed in the main surface of an SOI substrate and a plurality of dummy gate electrodes are disposed covering the respective dummy active layers. The arrangement pattern of the dummy active layers and the arrangement pattern of the dummy gate electrodes nearly match, so that the dummy gate electrodes are aligned accurately on the dummy active layers.

Abstract: The present invention provides a semiconductor device which has a substrate formed as a rigid body, stress relaxation layers formed by filling in concave portions defined in a first main surface of the substrate, and a device forming layer which covers part of the first main surface and is formed in the substrate. The substrate is made up of a material larger than the stress relaxation layers and the device forming layer in thermal expansion coefficient. Side faces of the device forming layer are electrically connected to their corresponding upper surfaces of the stress relaxation layers in an electrically non-conducting state via insulative stress transfer layers formed on the upper surfaces.

Abstract: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentration higher than the impurity concentration of the channel region and lower than the impurity concentration of the source and drain regions, a gate insulation film, and a gate electrode. The gate electrode is formed to overlap in plane with the channel region and the GOLD region. Accordingly, a semiconductor device and an image display apparatus directed to improving source-drain breakdown voltage are obtained.

Abstract: A semiconductor device is created in a doped silicon layer at most one-tenth of a micrometer thick formed on and having an interface with a sapphire substrate. An oppositely doped source region is formed in the silicon layer. A gate electrode is formed above part of the silicon layer. A diffusion layer doped with the same type of impurity as the source region but at a lower concentration is formed in the silicon layer, extending into a first area beneath the gate electrode, functioning as a drain region or as a lightly-doped extension of a more heavily doped drain region. The depth of this diffusion layer is less than the thickness of the silicon layer. This comparatively shallow diffusion depth reduces current leakage by inhibiting the formation of a back channel.

Abstract: A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.