Abstract: Provided is a method of manufacturing a display device, including: forming a polymer layer which includes an organic material on a principal surface side of a support substrate; forming one of a semiconductor circuit and a display circuit on the polymer layer; irradiating the polymer layer from the support substrate side with light having a wavelength that is absorbed in the polymer layer, to thereby separate the polymer layer from the support substrate; one of thinning and removing the polymer layer; and adhering a first substrate to one of a surface of the polymer layer and a face where the polymer layer has been provided.

Abstract: The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Abstract: A light emitting device array includes a first supporting member, at least two bonding layers disposed on the first supporting member, a second supporting member disposed on each of the at lest two bonding layers, a light emitting structure disposed on the second supporting member, the light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a first electrode disposed on the light emitting structure.

Abstract: Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.

Abstract: A light emitting diode (LED) package comprising a carrier, an LED chip, a lens, and a phosphor layer is provided. The LED chip disposed on the carrier. The lens encapsulating the LED chip has a plurality of fins surrounding the LED chip and a conical indentation. The fins extending backward the LED chip radially. Each of the fins has at least one light-emitting surface and at least one reflection surface adjoining the light-emitting surface. A bottom surface of the conical indentation is served as an total reflection surface. The phosphor layer is disposed on the light-emitting surfaces of the lens. An LED package and an LED module are also provided.

Abstract: A semiconductor epitaxial structure includes a substrate; a semiconductor epitaxial stack layers formed on the substrate; and a plurality of semiconductor buffer layers deposited between the substrate and the semiconductor epitaxial layer with a gradually varied composition along one direction; wherein more than one of the semiconductor buffer layers have a patterned surface.

Abstract: A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.

Abstract: A display device and a manufacturing method thereof are disclosed. In one embodiment, the display device includes 1) a substrate having a pixel region, a transistor region, and a capacitor region and 2) a transistor formed in the transistor region, wherein the transistor comprises i) an active layer formed over the substrate, ii) a gate insulating layer formed on the active layer, iii) a gate electrode formed on the gate insulating layer, and iv) a first interlayer insulating layer covering the gate electrode and formed on the gate insulating layer, v) a second interlayer insulating layer formed on the first interlayer insulating layer and vi) a source electrode and a drain electrode electrically connected to the active layer.

Abstract: The invention relates to a method 10 for forming a multi-level surface on a substrate 2, wherein said surface comprises areas of different wettability, the method comprising the step (A, B) of applying a multi-level stamp to the substrate for forming the multi-level surface, said multi-level stamp having different structural regions 1a arranged along the multi-level surface for locally altering wettability properties of at least a portion of a level of the multi-level surface 2a, 2b. The invention further relates to a semiconductor device and a method for manufacturing a semi-conductor device.

Abstract: A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.

Abstract: Lead frames for light emitting device packages, light emitting device packages, and illumination apparatuses employing the light emitting device packages. The lead frame including a plurality of mounting portions on which a plurality of light emitting device chips are mounted; a plurality of connection portions for circuit connecting the plurality of light emitting device chips; a terminal portion extended from the plurality of connection portions. The light emitting device package is formed by directly mounting the plurality of light emitting device chips on the lead frame and packaging the mounted light emitting device chips on the lead frame. The lead frame includes a plurality of connection portions for circuit connecting the plurality of light emitting device chips and a terminal portion in which a part of a circuit thereof is exposed.

Abstract: In formation of a quantum dot structure in a light emitting layer, a matrix region (an n-type conductive layer and matrix layers) is formed on a growth underlying layer of AlN whose abundance ratio of Al is higher (or whose lattice constant is smaller) than that in the matrix region by an MBE technique, thereby to realize conditions where compression stress is caused in an in-plane direction perpendicular to the direction of growth of the matrix region, and then to form island crystals by self-organization in the presence of this compression stress. The compression stress inhibits an increase in lattice constant caused by the reduced abundance ratio of Al in the matrix region, i.e., to compensate for a difference in lattice constant between the island crystals and the matrix region. The compression stress functions to enlarge compositional limits for formation of the island crystals by self-organization to the Ga-rich side.

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract: A light emitting diode (LED) package includes a LED package substrate, first LED chips and second LED chips. The LED package substrate includes a substrate, a first bonding pad, second bonding pads and a third bonding pad. The first, second and third bonding pads are disposed on the substrate. The second bonding pads are arranged in an array. The first and third bonding pads are located adjacent respectively to first and last column of the array. The first LED chips are die-bonded on the first bonding pad and wire-bonded respectively to the second bonding pads arranged in first column of the array. The second LED chips are die-bonded on the second bonding pads respectively. In each row except last column, each second LED chip is wire-bonded to the second bonding pad arranged in next column. The second LED chips located in last column are wire-bonded to the third bonding pad.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance without increasing driving voltage. The Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an InyGa1-yN (0<y<1) layer, an AlxGa1-xN (0<x<1) layer, and a GaN layer. The AlxGa1-xN (0<x<1) layer has such a thickness that electrons tunnel through the AlxGa1-xN layer and holes are confined in the light-emitting layer.

Abstract: A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.

Abstract: A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm?2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

Abstract: A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.

Abstract: Disclosed is an organic EL display panel which has: a substrate; two or more pixel electrodes arranged on the substrate; a bus electrode, which is positioned beside at least one pixel electrode and is disposed on the substrate; an organic layer which is formed on the pixel electrode by means of a coating method; two or more banks, which are disposed on the substrate and define the arrangement region of the organic layer; and a counter electrode, which is disposed on the organic layer and is connected to the bus electrode. The two or more banks include a bank disposed between the bus electrode and the pixel electrode, and a bank disposed between the pixel electrodes, and the lyophilicity of the surface of the bank disposed between the bus electrode and the pixel electrode is lower than that of the bank disposed between the pixel electrodes.

Abstract: Semiconductor devices in which one or more LEDs are formed include a dielectric region formed on a n/p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.

Abstract: Light emitting diodes and methods for manufacturing light emitting diodes are disclosed herein. In one embodiment, a method for manufacturing a light emitting diode (LED) comprises applying a first light conversion material to a first region on the LED and applying a second light conversion material to a second, different region on the LED. A portion of the LED is exposed after applying the first and second light conversion materials.

Abstract: An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer.

Abstract: A method for forming a pixel of an LED light source is provided. The method includes following steps: forming a first layer on a substrate; forming a second layer and a first light-emitting active layer on the first layer; exposing a portion of an upper surface of the first layer; forming a third layer on the substrate; forming a fourth layer and a second light-emitting active layer on the third layer; exposing a portion of an upper surface of the third layer; and forming a first electrode on the exposed upper surface of the first layer, a second electrode on a portion of an upper surface of the second layer, a third electrode on the exposed upper surface of the third layer, and a fourth electrode a portion of an upper surface of the fourth layer. The first light-emitting active layer and the second light-emitting active layer emit different colors of light.

Abstract: A quantum dot organic light emitting device and a method of manufacturing the same are disclosed. A first electrode layer is formed on a substrate. A block copolymer film which can cause phase separation on the first electrode layer is formed. The block copolymer film is phase-separated into a plurality of first domains, each having a nano size column shape, and a second domain which surrounds the first domains. A quantum dot template film of the second domain, which comprises a plurality of nano size through holes, is formed by selectively removing the first domains. Quantum dot structures, each of which comprises an organic light emitting layer in the through hole of the quantum dot template film, is formed.

Abstract: According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.

Abstract: Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. A patterned wafer has a plurality of individual LED attachment sites, and an alignment wafer has a plurality of individual cavities. The patterned wafer and the alignment wafer are superimposed with the LED attachment sites corresponding generally to the cavities of the alignment wafer. At least one LED is placed in the cavities using the cavity to align the LED relative to the patterned wafer. The LED is electrically connected to contacts on the patterned wafer, and a phosphor layer is formed in the cavity to cover at least a part of the LED.

Abstract: According to one embodiment, a light emitting device which is attached to an illumination apparatus and radiates light having a correlated color temperature of 2900 to 3600K is provided. The light emitting device includes a substrate, blue light emitting LED elements and red light emitting LED elements mounted on the substrate, and a wavelength converting unit. The red light emitting LED elements have a luminous intensity of 0.2 to 2.5 times as large as that of the blue light emitting LED elements at normal use temperature in a state where the light emitting device is attached to the illumination apparatus. The wavelength converting unit is excited by light emitted from the blue light emitting LED elements and converts the light to light having a peak wavelength within a range of 500 to 600 nm.

Abstract: Disclosed are a method of fabricating a light emitting device includes the steps of: forming a plurality of compound semiconductor layers on a substrate, the substrate including a plurality of chip regions and isolation region; selectively etching the compound semiconductor layers to form a light emitting structure on each chip region and form a buffer structure on the isolation region; forming a conductive support member on the light emitting structure and the buffer structure; removing the substrate by using a laser lift off process; and dividing the conductive support member into the a plurality of chips of the chip regions, wherein the buffer structure is spaced apart from the light emitting structure.

Abstract: An optical device includes an LED formed on a substrate and a wavelength conversion material, which may be stacked or pixilated, within vicinity of the LED. A wavelength selective surface blocks direct emission of the LED device and transmits selected wavelengths of emission caused by an interaction with the wavelength conversion material.

Abstract: A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

Abstract: An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.

Abstract: A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.

Abstract: A semiconductor device including: a thin film transistor substrate; and a driving circuit, wherein the thin film transistor substrate includes: a thin film transistor includes: a gate electrode; a gate insulating film that is formed on the insulating substrate and the gate electrode; a semiconductor layer that is formed on the gate insulating film; a channel protecting film; and a source electrode and a drain electrode that are formed to connect with the semiconductor layer; and a wiring converting unit that directly and electrically connects a first wiring layer and a second wiring layer through a first contact hole formed in the gate insulating film in the driving circuit, wherein the first wiring layer is formed at the same layer as the gate electrode on the insulating substrate; and wherein the second wiring layer is formed at the same layer as the source electrode and the drain electrode.

Abstract: A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.

Abstract: An LED module includes at least two LED package units and at least one connecting unit. Each LED package unit includes at least one first engaging portion, at least one first conductive portion, and at least one LED chip connected electrically to the first engaging portion. The connecting unit includes at least two second engaging portions, and at least one second conductive portion having two opposite end sections extending respectively to the second engaging portions. When the second engaging portions of the connecting unit engaged with the first engaging portions of the LED package units, respectively, the end sections of the second conductive portion contact electrically and respectively the corresponding first conductive portions so as to connect electrically the LED chips of the LED package units.

Abstract: There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

Abstract: A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on the second path from the first wavelength into a second wavelength. The light at the first wavelength mixes with the light at the second wavelength to form light of a third wavelength, which may be white light or another color.

Abstract: A light emitting device according to an embodiment is provided. The light emitting device comprises a second electrode layer, a third conductive semiconductor layer comprising a schottky contact region and an ohmic contact region on the second electrode layer, a second conductive semiconductor layer on the third conductive semiconductor layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, and a first electrode layer on the first conductive semiconductor layer.

Abstract: A package for an electronic component and method of forming a package for an electronic component are disclosed. The package may include a metal base and a termination chip coupled to the metal base. The termination chip may include a die contact pad electrically coupled to a mounting pad and an isolating feature configured to provide electrical isolation between the metal base and the die contact pad. The contact may be configured for electrical connection to the electronic component. The metal base may be folded to form a molding cavity. The metal base may include at least one plating layer. The package may include a light emitting diode (LED) coupled to the metal base. The LED may be coupled to the metal base via a eutectic bond.

Abstract: The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

Abstract: Multiple through-substrate vias (TSVs) are used to make electrical connections for an LED formed over a substrate. A first TSV extends through the substrate from a back surface of the substrate to the front surface of the substrate and includes a first TSV conductor that electrically connects to a first cladding layer of the LED. A second TSV extends through the substrate and an active layer of the LED from the back surface of the substrate to a second cladding layer or an ITO layer. The second TSV includes an isolation layer that electrically isolates a second TSV conductor from the first cladding layer and the active layer. Additionally dummy TSVs may be formed to conduct heat away from the LED optionally through a package substrate.

Abstract: According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0<y1?0.01).

Abstract: A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device. In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.

Abstract: Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: A photodiode (10) of the present invention has a p-type semiconductor region (11), an i-type semiconductor region (12), and an n-type semiconductor region (13). The channel length “L” of the photodiode (10) is determined by the source wiring films (8) formed by etching. This configuration provides a display device equipped with the plurality of photodiodes (10) having consistent properties.

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.