Abstract: A method of fabricating a light emitting device comprising: providing a substrate; forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer; forming a mesa on the epitaxial stack to expose partial of the first conductivity semiconductor layer; layer and etching the surface of the first conductivity semiconductor layer and forming a least one rough structure on the surface of the first conductivity semiconductor layer wherein the first conductivity semiconductor layer is sandwiched by the substrate and the active layer.

Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

Abstract: A light emitting device (1) includes a LED chip (10) as well as a mounting substrate (20) on which the LED chip (10) is mounted. Further, the light emitting device (1) includes a cover member (60) and a color conversion layer (70). The cover member (60) is formed to have a dome shape and is made of a translucency inorganic material. The color conversion layer (70) is formed to have a dome shape and is made of a translucency material (such as, a silicone resin) including a fluorescent material excited by light emitted from the LED chip (10) and emitting light longer in wavelength than the light emitted from the LED chip (10). The cover member (60) is attached to the mounting substrate (20) such that there is an air layer (80) between the cover member (60) and the mounting substrate (20). The color conversion layer (70) is superposed on a light-incoming surface or a light-outgoing surface of the cover member (60).

Abstract: The luminous element includes a luminescence lamination, a second transparent oxidative conducting layer and a composite conducting layer. The composite conducting layer includes first transparent oxidative conducting layer and a metal layer. The second transparent oxidative conducting layer is positioned between the metal layer and luminescence lamination the second transparent oxidative conducting layer forms good ohmic contact with the luminous element and with metal layer. Thus, the metal layer will not be influenced by interfusion so as to maintain good light transmissivity and raise luminous efficiency of luminous element.

Abstract: A light emitting device (LED) epitaxial structure includes a substrate, a nitride semiconductor layer, a patterned oxide total-reflective layer, a first-type semiconductor layer, an active layer and a second-type semiconductor layer. The nitride semiconductor layer is formed on the substrate. The patterned oxide total-reflective layer is formed on the nitride semiconductor layer. An upper surface of the nitride semiconductor layer is partially exposed out from the oxide total-reflective layer. The first-type semiconductor layer is arranged on the exposed upper surface of the nitride semiconductor layer and covers the oxide total-reflective layer. The active layer is arranged on the first-type semiconductor layer. The second-type semiconductor layer is arranged on the active layer.

Abstract: A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.

Abstract: An LED package includes a transparent substrate, an LED die, and an encapsulating layer. The transparent substrate has a first surface defining a recess therein, a second surface opposite to the first surface, and a lateral surface interconnecting the first and second surfaces. The LED die is arranged on the bottom of the recess. The encapsulating layer is in the recess and covers the LED die. The LED package further includes a metal layer formed on the second surface and the lateral surface of the substrate. A pair of electrodes is located at the bottom of the recess and extends through the metal layer. An insulated material is filled between the transparent substrate and the electrodes. Light emitted from the LED die is transmitted through the transparent substrate and reflected by the metal layer.

Abstract: Provided are a light-emitting element and a light-emitting device, and methods of fabricating the same. The method of fabricating a light-emitting element includes forming a buffer layer on a substrate and forming photonic crystal patterns and a pad pattern on the buffer layer. Each of the pad pattern and the photonic crystal patterns are made of a metal material, and the pad pattern is physically connected to the photonic crystal patterns. Forming a light-emitting structure includes sequentially stacking a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type on the buffer layer. And the method also includes forming a first electrode that is electrically connected to the first conductive pattern and forming a second electrode that is electrically connected to the second conductive pattern.

Abstract: A semiconductor device package is provided. The semiconductor device package comprises a package body; a plurality of electrodes comprising a first electrode on the package body; a paste member on the first electrode and comprising inorganic fillers and metal powder; and a semiconductor device die-bonded on the paste member, wherein a die-bonding region of the first electrode comprises a paste groove having a predetermined depth and the paste member is formed in the paste groove.

Abstract: The present invention discloses an LED package structure which has a housing, an LED chip and a transparent encapsulant. The housing has a recess and a plurality of protrusions. The LED chip is mounted in the recess of the housing, and covered in the recess by the transparent encapsulant. The protrusions are formed in the recess or on the edge of the housing. The protrusions of the present invention can form the uneven shape of the surface of the transparent encapsulant, so as to increase the diffusion angle of the light and enhance the light extraction efficiency.

Abstract: An LED package includes a substrate, an electrode layer, a light-emitting chip, a reflection cup and an encapsulation. The substrate includes a first surface, an opposite second surface, and two side surfaces. The electrode layer is consisted of a positive electrode and a negative electrode, each of which extends from the first surface to the second surface via a respective side surface. The light-emitting chip is located on the first surface of the substrate and electrically connected to the electrode layer. The reflection cup comprises a first part covering the electrode layer on the side surfaces of the substrate, a second part with a bowl-like shape on the first surface of the substrate and surrounding the light-emitting chip. The encapsulation is filled in the second part of the reflection cup.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: Provided are a display device and a method of manufacturing of the display device. The display device includes a substrate subjected to a primary preprocess; a conductor formed on the substrate and subjected to a secondary preprocess; and an insulating layer formed on the substrate and the conductor, in which the primary preprocess is performed for a surface energy of the first substrate higher than a first reference value and the secondary preprocess is performed for a surface energy of the conductor lower than a second reference value.

Abstract: A light emitting diode comprises a heat conductive layer, a semiconductor layer disposed above the heat conductive substrate and consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a transparent electrode layer, a current blocking layer and an electrode contact pad. The p-type semiconductor layer has first concaves located on its surface distant from the active layer. The n-type semiconductor layer has second concaves located on its surface distant from the active layer. The transparent electrode layer is located on the surface of the n-type semiconductor layer except the second concaves. The current blocking layer is located in the first concaves of the p-type semiconductor layer. The electrode contact pad is located on the surface of the transparent electrode layer. The density of the second concaves decrease with distance from the electrode contact pad.

Abstract: A light emitting diode (LED) is provided. The LED includes a carrying substrate, a semiconductor composite layer and an electrode. The semiconductor composite layer is disposed on the carrying substrate, and an upper surface of the semiconductor composite layer includes a patterned surface and a flat surface. The electrode is disposed on the flat surface. A method for manufacturing the light emitting diode is provided as well.

Abstract: The present invention relates to an optical lighting device comprising at least one light emitting diode configured for emitting said light with a trajectory, the device being capable of modifying said trajectory since it comprises an optical element comprising two faces each having a plurality of preferably rectangular lenses, each lens of one face being aligned with a lens of the other face.

Abstract: Disclosed is a semiconductor light emitting element (1), which includes: an n-type semiconductor layer (140); a light emitting layer (150), which is laminated on one surface of the n-type semiconductor layer (140) such that a part of the surface is exposed, and which emits light when a current is carried therein; a p-type semiconductor layer (160) laminated on the light emitting layer (150); a multilayer reflection film (180), which is configured by alternately laminating low refractive index layers (180a) and high refractive index layers (180b) that have a refractive index higher than that of the low refractive index layers (180a) and also have transparency with respect to light emitted from the light emitting layer (150), and which is laminated on the exposed portion of the n-type semiconductor layer (140), the exposed portion being on one side of the n-type semiconductor layer; an n-conductor portion (400), which is formed by penetrating the multilayer reflection film (180), and which has one end thereof c

Abstract: Disclosed herein is a light emitting device including: an organic layer sandwiched between a first electrode and a second electrode to serve as an organic layer including a light emitting layer for emitting monochromatic light at one location; a first light reflection boundary face provided on a side close to the first electrode to serve as a boundary face for reflecting light emitted from the light emitting layer so as to radiate the reflected light from a side close to the second electrode; and a second light reflection boundary face, a third light reflection boundary face and a fourth light reflection boundary face which are sequentially provided at positions separated away from each other in a direction from the first electrode to the second electrode on the side close to the second electrode.

Abstract: A new manufacturing method is described by the present invention for a new LED module 1. The method comprises mounting of at least one LED 3 onto a surface of a substrate 2, and depositing a base layer 5 to cover said substrate 2 surface and the LED 3, wherein the base layer 5 is transparent for visible light and preferably does not comprise phosphor particles. Optionally, a first heat treatment to modify the surface properties of the base layer 5 is comprised. The method further comprises dispensing a matrix material, so that it forms an essentially half-spherical cover covering the LED and optionally nearby portions of the base layer, and optionally, a second heat treatment to harden the half-spherical cover layer. Additionally the present invention discloses an LED module 1, which is manufactured by the claimed method.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: A method for fabricating flexible display device includes the following steps. Firstly, a rigid substrate is provided. Secondly, a sacrificing layer is formed on the rigid substrate. Thirdly, an element layer is formed on the sacrificing layer. Fourthly, the sacrificing layer is etched by a gas and then gasified, so that the element layer is separated from the rigid substrate. Then, the element layer is adhered to a flexible substrate. Because products generated by the sacrificing layer reacting with the gas are gases, the products can be removed by air exhaust for simplifying process. Thus, the cost of the process of fabricating flexible display device can be decreased.

Abstract: Packages for containing one or more light emitting devices, such as light emitting diodes (LEDs), are disclosed with an efficient, isolated thermal path. In one embodiment, LED package can include a thermal element and at least one electrical element embedded within a body. The thermal element and electrical element can have the same and/or substantially the same thickness and can extend directly from a bottom surface of the LED package such that they are substantially flush with or extend beyond the bottom surface of the LED package. The thermal and electrical element have exposed portions which can be substantially flush with lateral sides of the body such that the thermal and electrical element do not have a significant portion extending beyond an outermost edge of the lateral sides of the body.

Abstract: An LED package includes a substrate; a plurality of LED units formed on the substrate; and a phosphor tape arranged on the LED units. Light from the LED units travels to an external environment through the phosphor tape. The phosphor tape has phosphor particles evenly distributed therein. A method for forming the LED package is also provided.

Abstract: Disclosed herein is a method for manufacturing a light emitting diode (LED) module, the method including: disposing a circuit board at a molding space formed by an upper mold and a lower mold; adding a filling material to the molding space; hardening the filling material to form a molding cover covering at least a portion of an upper surface, a lower surface, and a side surface of the circuit board, the molding cover having an opening exposing the lower surface of the circuit board; removing the upper mold and the lower mold from the circuit board; and disposing an LED on the upper surface of the circuit board.

Abstract: A LED package includes a substrate, at least one LED chip, a transparent adhesive and a lens. The at least one LED chip is mounted on the substrate. The transparent adhesive is filled between the LED chip and the lens. A number of through holes is regularly defined in an optical non-effective portion of the lens. The through holes are configured for increasing the air convection between inside and outside of the lens.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer.

Abstract: A light-emitting diode structure includes a base with a recessed portion, a light-emitting chip and a light-transmissive block. The light-emitting chip disposed in the recessed portion of the base and emits a light beam. The light-transmissive block disposed on the base covers the recessed portion and the light-emitting chip, so that the light beam emitted from the light-emitting chip is radiated outwardly via the light-transmissive block. The light-transmissive block is a flat-top multilateral cone including a bottom surface, a top surface, and several side surfaces connected to and located between the bottom surface and the top surface. A slot with a bottom portion is formed on the top surface of the light-transmissive block.

Abstract: A semiconductor device includes a substrate and an epitaxy layer positioned on the substrate. In one embodiment of the present disclosure, the substrate includes an upper surface and a plurality of bumps positioned on the upper surface, and each of the bumps includes a top plane substantially parallel to the upper surface and a plurality of wall surfaces between the top plane and the upper surface. In one embodiment of the present disclosure, the epitaxy layer has the same crystal orientation on the upper surface of the substrate and the wall surfaces of the bumps to reduce defect density and increase protection from electrostatic discharge.

Abstract: A small-sized lighting device can achieve wider light distribution patterns. The lighting device can include a semiconductor light emitting element configured to emit light from a first face and a second face thereof. A mounting substrate can be provided on which the semiconductor light emitting element is mounted. Light emitted from the second face can transmit through the mounting substrate, and a first optical system can be provided and configured to impart a first light distribution pattern to the light emitted from the first face of the semiconductor light emitting element. A second optical system can be provided and configured to impart a second light distribution pattern to light emitted from the second face of the semiconductor light emitting element.

Abstract: In accordance with certain embodiments, an unpackaged inorganic LED die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the unpackaged inorganic LED die or non-coplanarity of the contacts thereof.

Abstract: An LED package includes a light transmissive encapsulation, an LED die embedded in the encapsulation from a bottom surface of the encapsulation, a positive electrode electrically connected to an anode of the LED die, and a negative electrode electrically connected to a cathode of the LED die. The encapsulation includes a light emitting surface opposite to the bottom surface thereof. The LED die includes a front surface for outputting light outward, and a back surface opposite to the front surface. The front surface is covered by the encapsulation and faces the light emitting surface of the encapsulation. The back surface is exposed outside. A light emitting device is provided by mounting the LED package to a circuit board. The circuit board has a heat conductor connecting with the LED die.

Abstract: A light emitting element which can emit light in a uniform polarization state at a high efficiency and a higher luminance level is realized. The light emitting element of the present invention is a light emitting element including an active layer for generating light, the light emitting element including: a polarizer layer including a first region that transmits polarized light in a first direction and reflects other light from among the light generated at the active layer, and a second region that transmits polarized light in a second direction orthogonal to the first direction and reflects other light; a wave plate layer including a third region and a fourth region that allow the lights exited from the first region and the second region to enter, and to exit as light in the same polarization state; and a reflection layer that reflects the lights reflected at the first region and the second region.

Abstract: According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

Abstract: A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.

Abstract: A semiconductor light emitting device that includes: a light emitting structure; a light transmitting layer under a second portion of the light emitting structure; and a reflective electrode layer electrically connected to the light emitting structure, a portion of the reflective electrode layer being disposed unparallel to the light emitting structure.

Abstract: A transparent directional polarized light-emitting device includes a transparent anode and a transparent cathode, a radiation-emitting layer between the anode and the cathode, an optically active reflective layer with a reflection band that matches a chirality and at least partially encompasses a wavelength band of radiation emitted from the radiation-emitting layer, the optically active light blocking layer located on a side of the radiation-emitting layer, and a transparent substrate adjacent to the optically active reflective layer.

Abstract: A side-emitting light emitting device (100) is provided, comprising a substrate (101), a reflector (102) arranged spaced apart from said substrate (101) and extending along the extension of said substrate, and at least one light emitting diode (103) arranged on said substrate and facing said reflector, said substrate (101) and reflector (102) delimiting a wave guiding region (104) for light emitted by said at least one light emitting diode (103). Further, a wavelength converting material (105) is arranged at the lateral edge of said wave guiding region (104). The invention provides a compact side emitter with controlled color emission.

Abstract: A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.

Abstract: The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.

Abstract: The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.

Abstract: Organic adhesive light-emitting device with ohmic metal bulge. The organic adhesive light-emitting device includes a conductive substrate, a light-emitting stack layer, a metal layer formed over the conductive substrate, a reflective layer formed over the light-emitting stack layer, and an organic adhesive layer having an ohmic metal bulge and an adhesive material around the ohmic metal bulge. The adhesive material bonds the metal layer and the reflective layer together, while the ohmic metal bulge forms ohmic contacts with the metal layer and the reflective layer. The configuration can simplify a light-emitting diode.

Abstract: Methods are disclosed including generating a substrate surface topography that includes a mounting portion that is higher than a relief portion that defines a perimeter of the mounting portion.

Abstract: A method includes forming a light-emission operating layer on a growth substrate; forming a reflection insulating layer on the light-emission operating layer; forming opening portions in the insulating layer; forming a contact portion which has a thickness adapted to flatten the opening portions and has been embedded into the opening portions; forming an electrode layer on the insulating layer and the contact portions; forming a first bonding metal layer on the electrode layer; preparing a supporting substrate in which a second bonding metal layer has been formed; and making the first and second bonding metal layers molten and joined.

Abstract: A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: The present application is to provide a light-emitting device comprising a metal reflective layer; a first transparent conductive oxide layer having a first refractive index; a second transparent conductive oxide layer having a second refractive index different from the first refractive index, and being between the metal reflective layer and the first transparent conductive oxide layer; and a light-emitting stack layer electrically connected to the second transparent conductive oxide layer substantially through the first transparent conductive layer; wherein there is no light absorbing material between the metal reflective layer and the first transparent conductive oxide layer.

Abstract: A semiconductor light-emitting device includes (A) a light-emitting portion obtained by laminating in sequence a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (B) a first electrode electrically connected to the first compound semiconductor layer; (C) a transparent conductive material layer formed on the second compound semiconductor layer; (D) an insulating layer composed of a transparent insulating material and having an opening, the insulating layer being formed on the transparent conductive material layer; and (E) a second electrode that reflects light from the light-emitting portion, the second electrode being formed on the transparent conductive material layer and on the insulating layer in a continuous manner, wherein, assuming that areas of the active layer, the transparent conductive material layer, the insulating layer, and the second electrode are respectively S1, S2, S3, and S4, S1?S2<S3 and S2<S4 are satisfied.

Abstract: The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Abstract: Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape.

Abstract: A light emitting device comprises a novel low-loss array of conductive vias embedded in a dielectric multilayer stack, to act as an electrically-conductive, low-loss, high-reflectivity reflector layer (CVMR). In one example the CVMR stack is employed between a reflective metal bottom contact and a p-GaN semiconductor flip chip layer. The CVMR stack comprises at least (3) layers with at least (2) differing dielectric constants. The conductive vias are arranged such that localized and propagating surface plasmons associated with the structure reside within the electromagnetic stopband of the CVMR stack, which in turn inhibits trapped LED modes coupling into these plasmonic modes, thereby increasing the overall reflectivity of the CVM R. This technique improves optical light extraction and provides a vertical conduction path for optimal current spreading in a semiconductor light emitting device. A light emitting module and method of manufacture are also described.