Abstract: Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.

Abstract: An IPS mode LCD device includes gate and data lines on a first substrate and crossing to define pixel regions; a thin film transistor connected to the gate lines and the data lines; a first common electrode and a pixel electrode on the first substrate and alternating with each other in each pixel region, each of the first common electrode and the pixel electrode including lower and upper layers; a color filter layer including red, green and blue color filter patterns and on a second substrate, the color filter patterns corresponding to each pixel region; and a liquid crystal layer between the first and second substrates, wherein at least two of the color filter patterns overlap at a boundary of the pixel regions, and wherein the lower layer is made of MoTi, and the upper layer is made of a transparent conductive material or copper nitride.

Abstract: An edge lighting device, and a method of providing edge lighting, including providing a lighting device with at least one light emitting diode (LED) chip embedded therein, wherein the LED chip(s) generates light photons. A path of the light photons within the lighting device that are emitted by the LED chip(s) from a top surface of the LED chip(s), are redirected from a first edge of the lighting device back through the lighting device to a second edge of the lighting device opposite to the first edge. The first edge and the second edge of the lighting device are perpendicular to the top surface of the LED chip(s). The photons which were redirected from the first edge of the lighting device then follow a path through the second edge of the device and are then output from the edge lighting device at the second edge of the device.

Abstract: A method of manufacturing a multichip package structure includes: providing a substrate body; placing a plurality of light-emitting chips on the substrate body, where the light-emitting chips are electrically connected to the substrate body; surroundingly forming surrounding liquid colloid on the substrate body to surround the light-emitting chips; naturally drying an outer layer of the surrounding liquid colloid at a predetermined room temperature to form a semidrying surrounding light-reflecting frame, where the semidrying surrounding light-reflecting frame has a non-drying surrounding colloid body disposed on the substrate body and a dried surrounding colloid body totally covering the non-drying surrounding colloid body; and then forming a package colloid body on the substrate body to cover the light-emitting chips, where the semidrying surrounding light-reflecting frame contacts and surrounds the package colloid body.

Abstract: An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a multi-layer structure disposed on the substrate, and the multi-layer structure consisted of a plurality of insulating layers with different refractive indices formed alternately; a first conductive semiconductor layer disposed on the substrate to cover the multi-layer structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; a transparent conductive layer disposed on the second conductive semiconductor layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting-efficiency.

Abstract: A light-emitting device having a through-hole cavity is disclosed. The optical device may contain a plurality of conductors, a light source die, a body and a transparent encapsulant material. The body may have a top surface and a bottom surface. A cavity is formed within the body extending from the bottom surface to the top surface and defining therein a bottom opening and a top opening, respectively. Optionally, the light-emitting device may comprise a lens. During manufacturing process, liquid or semi-liquid form transparent material is injected from the bottom surface into the cavity, encapsulating the light source die and forming a lens. The shape of the lens is defined by a mold aligned to the top opening of the body. In yet another embodiment, optical devices having a cavity or multiple cavities are disclosed. The optical devices may include a proximity sensor, an opto-coupler, an encoder and other similar sensors.

Abstract: A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. A second temporary substrate is coupled to an upper surface of the epitaxial layer with a first adhesive layer. The first temporary substrate is removed from the epitaxial layer to expose a bottom surface of the epitaxial layer. A permanent semiconductor substrate is coupled to the bottom surface of the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the upper surface of the epitaxial layer. A plurality of semiconductor light emitting devices are formed from the epitaxial layer on the permanent semiconductor substrate.

Abstract: A method for producing a semiconductor optical device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer; forming a first pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer; etching the silicon-containing resin layer to have a second pattern reverse to the first pattern; selectively etching the non-silicon-containing resin layer by a RIE method employing a gas mixture containing CF4 gas and O2 gas, the non-silicon-containing resin layer having the second pattern; and etching the semiconductor layer.

Abstract: The present invention relates to a light emitting diode (LED), which enables a filler material for filling up a hole or opening of a substrate to prevent a resin of an encapsulant formed on the substrate from leaking and to enhance cohesion between the substrate and a resin portion formed in the hole or opening, and a method for fabricating the LED package. According to an embodiment of the present invention, there is provided an LED package, which comprises an LED chip; a substrate having the LED chip mounted thereon, the substrate having a hole or opening formed therein; an encapsulant formed on the substrate to encapsulate the LED chip; a resin portion for filling in the hole or opening; and a filler material for filling up a gap between the resin portion and the substrate.

Abstract: A polarized white light emitting diode provides a polarized white light to decrease glare, and increase the extinction ratio. A LED chip is disposed in a cavity between a reflection substrate and a metallic wire-grid polarizing layer, and emits a first color light. The metallic wire-grid polarizing layer is disposed under and in contact with a transparent substrate. A phosphor layer covers over the LED chip, and is disposed in the cavity with an air gap between the phosphor layer and the metallic wire-grid polarizing layer. A second color light is generated by the first color light. The metallic wire-grid polarizing layer multiply reflects a portion of first color light in plural directions in the cavity to produce secondary excitations. The polarized white light transmits through the metallic wire-grid polarizing layer by mixing a portion of first color light with the second color light excited by the first color light.

Abstract: A high efficiency light emitting diode with an ultraviolet light-emitting structure. The structure has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein 0?x?1 and 0?y?1; a second layer with a second conductivity comprising Al1-x-yInyGaxN wherein 0?x?1 and 0?y?1; and a light emitting quantum well region between said first layer and said second layer comprising Al1-x-yInyGaxN wherein 0?x?1 and 0?y?1. The diode also has a carrier bonded to said first layer and said second layer wherein said carrier has a thermal conductivity of at least 100 W/mK and said carrier is resistive between a bonding location of said first layer and a second bonding location of said second layer.

Abstract: A light emitting device comprises: a light emitting element (20); a first metal board (11) that includes a mount portion (111) on which the light emitting element (20) is mounted and a reflection portion (112) which is formed outside the mount portion (111) to reflect light from the light emitting element (20); a second metal board (12) that is electrically connected to the light emitting element (20) via a wire (50); a metal plated layer (15) that is formed on a surface of the metal boards (11), (12); and a seal resin (40) that is formed on the metal boards (11), (12) to seal at least the light emitting element (20); wherein at least the reflection portion (112) is provided with a protection layer (35) which is lower than the seal resin (40) in gas permeability, is transparent or has a reflectance near the metal plated layer (15).

Abstract: Packages for containing one or more light emitting devices, such as light emitting diodes (LEDs), are disclosed with an efficient, isolated thermal path. In one embodiment, LED package can include a thermal element and at least one electrical element embedded within a body. The thermal element and electrical element can have the same and/or substantially the same thickness and can extend directly from a bottom surface of the LED package such that they are substantially flush with or extend beyond the bottom surface of the LED package. The thermal and electrical element have exposed portions which can be substantially flush with lateral sides of the body such that the thermal and electrical element do not have a significant portion extending beyond an outermost edge of the lateral sides of the body.

Abstract: A light emitting diode package includes a mount, a plurality of LED chips, and a first and a second sealants made of different materials. The mount has an accommodation space and at least one partition member to divide the accommodation space into a plurality of separate cavities. The LED chips are placed in the cavities, and emitting beams of the LED chips exiting through the cavities include a first emission with a first wavelength band and a second emission with a second wavelength band, and the second wavelength band is different to the first one. The first and the second sealants are respectively used for sealing at least one of the LED chips placed in at least one of the cavities through which the first or the second emission exits. The first and the second sealants are separate from each other by the partition member.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A light emitting device according to the embodiment includes a first semiconductor layer; an active layer to generate a light on the first semiconductor layer; a second conductive semiconductor layer on the active layer; a transparent electrode layer on the second conductive semiconductor layer; and a multiple thin film mirror on the transparent electrode layer, the multiple thin film mirror being formed by repeatedly stacking a first thin film layer having a first refractive index and a second thin film layer having a second refractive index different from the first refractive index by at least one time, wherein the second conductive semiconductor layer has a thickness satisfying: 2·?1+?2=N·2?±?, (0????/2) in which, ?1 is a phase shift occurring when a light, which travels in a vertical direction, passes through the second conductive semiconductor layer and is expressed as ?1=2?nd/? (n is a refractive index of the light, ? is a wavelength of the light, and d is a thickness of the second conductive semiconduc

Abstract: A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.

Abstract: A light emitting device is fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. A gel that is diluted in a solvent is applied on the substrate and on the array of light emitting dies. At least some of the solvent is evaporated so that the gel remains in the gaps, but does not completely cover the light emitting diode dies. For example, the gel substantially recedes from the substrate beyond the array of light emitting diode dies and also substantially recedes from an outer face of the light emitting diode dies. Related light emitting device structures are also described.

Abstract: A semiconductor light emitting device (A) includes a lead frame (1) having a constant thickness, a semiconductor light emitting element (2) supported by the lead frame (1), a case (4) covering part of the lead frame (1) and a light transmitting member (5) covering the semiconductor light emitting element (2). The lead frame (1) includes a die bonding pad (11a) and an elevated portion (11b). The die bonding pad (11a) includes an obverse surface on which the semiconductor light emitting element (2) is mounted, and a reverse surface exposed from the case (4). The elevated portion (11b) is shifted in position from the die bonding pad (11a) in the direction normal to the obverse surface of the die bonding pad (11a).

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Abstract: The present invention includes light source layer (4) and directivity controlling layer (5) into which light emitted from light source layer (4) enters. Light source layer (4) has a pair of hole transport layer (11) and electron transport layer (13) formed on substrate (10). Directivity controlling layer (5) has plasmon excitation layer (15) that is laminated on non-substrate (10) side of light source layer (4) and that has a higher plasma frequency than light emitted from light source layer (4) and wave number vector conversion layer (17) that converts surface plasmons that are generated in plasmon excitation layer (15) into light having a predetermined emission angle and emits the light having the predetermined emission angle. Plasmon excitation layer (15) is sandwiched between two layers having dielectricity.

Abstract: An LED base plate enabling the LED to emit high luminance white light. The base plate has a reflective surface, and protrusions disposed on the reflective surface have top portions formed with curved surfaces. The protrusions have bottom widths of 2 to 4 micrometers and heights of 1.2 to 1.8 micrometers, with adjacent protrusions having spaces of 0.6 to 3 micrometers. An InGaN epitaxy layer is coated on the reflective surface of the base plate and emits ultraviolet of wavelength in the range of 380 to 410 nanometer when the InGaN epitaxy layer is electrified. Ultraviolet light reflected by the reflective surface of the base plate and the protrusions stimulates and mixes fluorescent compounds of zinc oxide and yttrium aluminum garnet to generate complementary light of ultraviolet light. High luminance white light scatteringly emitted is used for illumination.

Abstract: Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nanorod is formed substantially perpendicularly to the substrate and includes a first nanorod of a first conductivity type, an (AlxInyGa1-x-y)N (where, 0?x<1, 0?y?1 and 0?x+y?1) quantum well, and a second nanorod of a second conductivity type, which are joined in a longitudinal direction. The nano shell is formed of a material with a bandgap greater than that of the quantum well, and surrounds at least the quantum well of the core nanorod. Meanwhile, the second nanorods are connected in common to the transparent electrode.

Abstract: An electromagnetic radiation generating semiconductor chip is disclosed. A semiconductor layer sequence suitable for generating electromagnetic radiation is grown on a first main face of a radioparent, electrically conductive growth substrate, for example, a SiC growth substrate. Provided on a second main face of said growth substrate that faces away from said semiconductor layer sequence is a roughening that acts as a diffuser for an electromagnetic radiation emitted into said growth substrate by said semiconductor layer sequence and that in particular has a scattering factor higher than 0.25. A layer or layer sequence reflective of the electromagnetic radiation is applied to said roughening. A method for making the semiconductor chip is also disclosed.

Abstract: A manufacturing method of nitride semiconductor light emitting elements, which can reliably form a mechanically stable wiring electrode leading from a light emitting element surface. A structure protective sacrifice layer is formed around a first electrode layer on a device structure layer beforehand, and after separation of the device structure layer into respective portions for the light emitting elements, the resultant is stuck to a support substrate. Subsequently, forward tapered grooves reaching the structure protective sacrifice layer are formed, and the inverse tapered portion formed outward of the forward tapered groove is lifted off in a lift-off step. Thus, an insulating layer is formed on the forward tapered side walls of the light emitting element, and a wiring electrode layer electrically connected to the second electrode layer on the principal surface of the light emitting element is formed on the insulating layer.

Abstract: According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.

Abstract: An LED device comprises a substrate, an LED chip and a luminescent conversion layer. The substrate comprises a first electrode, a second electrode and a reflector located on top faces of the first and the second electrodes. The LED chip is disposed on the first electrode and electrically connected to the first and the second electrodes. The luminescent conversion layer is located inside the reflector and comprises a first luminescent conversion layer and a second luminescent conversion layer with different specific gravities. A manufacturing method for the LED device is also provided.

Abstract: A lens according to an embodiment of the present invention may include a first depression and a second depression having predetermined patterns in a lower portion of the lens, and a phosphor layer and the lens may be collectively formed by disposing the lens after spraying a phosphor rather than separately forming the phosphor on the LED chip during a manufacture of the LED module. Accordingly, a production tolerance, and the like of an LED module may be removed to improve yield, and a manufacturing process of the LED module may be simplified. A lens may have an upper portion formed in advance in one of a hemispherical shape, an oval shape, and a batwing shape having a concave central portion, thereby implementing a customized lens according to a predetermined application.

Abstract: A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof.

Abstract: A light emitting device includes a body having a recess; a barrier section protruding upward over a bottom surface of the recess and dividing the bottom surface of the recess into a plurality of regions; a plurality of light emitting diodes including a first diode disposed in a first region of the bottom surface of the recess and a second diode disposed in a second region of the bottom surface of the recess; a plurality of lead electrodes spaced apart from each other in the recess and selectively connected to the light emitting diodes; wires connecting the lead electrodes to the light emitting diodes; a resin layer in the recess; and at least one concave part in the barrier section. The concave part has a height lower than a top surface of the barrier section and higher than the bottom surface of the recess and the wires are provided in the concave part to connect the lead electrodes to the light emitting diodes disposed in opposition to each other.

Abstract: A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of isolation layers formed along an outer peripheral portion of the light emitting structure below the light emitting structure, a metal layer interposed between the isolation layers, and a second electrode layer formed below the light emitting structure.

Abstract: A cut which penetrates a resin layer is formed in the resin layer such that the cut surrounds a third upper surface. A film is formed such that the film covers the whole resin layer except for a bottom surface of the resin layer inside the cut and at least a portion of the resin layer is exposed outside the cut. The resin layer which is wholly covered with the film is left inside the cut, and the whole resin layer continuously formed with a surface exposed from the film is removed outside the cut. A bump is formed by the resin layer and the film inside the cut, and a shutter and at least a portion of a drive part are formed by the film outside the cut in a state where these parts are floated from a first substrate.

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract: An optically transparent electrically conductive structure having: an optically transparent substrate; an optically transparent buffer and barrier layers; a plurality of optically transparent, two-dimensional electron gas (2-DEG) carrier layers disposed on the substrate. A barrier layer is disposed over a corresponding one of the carrier layers. One of the carrier layers comprises: a GaN channel layer and wherein the barrier layer is Al1-xInxN or Al5yGa1-6yInyN where 0.10<x<0.30 and 0.05<y<0.17.

Abstract: A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.

Abstract: A light emitting device including a sapphire layer and a light emitting layer formed on the sapphire layer. The sapphire layer has a polygonal sectional shape whose internal angle is an obtuse angle, such as a regular hexagonal shape. Light emitted from the light emitting layer is totally reflected on one side surface of the sapphire layer and next transmitted through another side surface of the sapphire layer.

Abstract: A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

Abstract: A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

Abstract: Aspects include electrodes that provide specified reflectivity attributes for light generated from an active region of a Light Emitting Diode (LED). LEDs that incorporate such electrode aspects. Other aspects include methods for forming such electrodes, LEDs including such electrodes, and structures including such LEDs.

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.

Abstract: An illuminating means, including a radiation source for emitting electromagnetic radiation in the optical range, a support base, and an electrode arrangement with a first and at least a second electrode. The radiation source is disposed on the support base and connected by connecting wires to the electrode arrangement so as to be electrically conductive, and the radiation source is provided in the form of a first and at least a second semiconductor component. The first electrode is connected to the first semiconductor component via a first contact point, and the second electrode is connected to the second semiconductor component via a second contact point, so as to be electrically conductive. The distance of the first contact point from a center point or a line of symmetry of the support base is different from the distance of the second contact point from the center point or line of symmetry.

Abstract: Provided is a light-emitting apparatus in which light extraction efficiency of a light-emitting device is improved and viewing angle dependency of an emission color is reduced. The light-emitting apparatus includes a cavity structure and a periodic structure. When guided-wave light is diffracted by the periodic structure in a direction that forms an angle which is larger than 90° and smaller than 180° relative to a guided-wave direction of an optical waveguide in the cavity structure, a wavelength of the diffracted light becomes longer as the diffraction angle increases.

Abstract: A method for making a light emitting diode comprises the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is located on the epitaxial growth surface. Third, a first semiconductor layer, an active layer, and a second semiconductor layer is grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is electrically connected to the first semiconductor layer, and a second electrode electrically is connected to the second semiconductor layer.

Abstract: A light emitting diode includes a carbon nanotube layer, a first semiconductor layer, a second semiconductor layer, an active layer, a first electrode and a second electrode stacked on an epitaxial growth surface of a substrate. A first part of the carbon nanotube layer is covered by the first semiconductor layer and a second part of the carbon nanotube layer is exposed. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer.

Abstract: A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is placed on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the substrate. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate is removed. A second electrode is deposited on the first semiconductor layer.

Abstract: Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon.

Abstract: The present invention provides a LED chip structure. The LED chip structure comprises a substrate and an N type layer disposed on the substrate; a P type layer disposed on the N type layer; a N type contact pad and a P type contact pad disposed below the substrate; conductive through holes disposed through the substrate to electrically connect the N type layer to the N type contact pad and the P type layer to the conduct heat generated by the P type layer and the N type layer downward.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench.